CN100517775C - Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof - Google Patents
Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof Download PDFInfo
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- CN100517775C CN100517775C CNB2004100849217A CN200410084921A CN100517775C CN 100517775 C CN100517775 C CN 100517775C CN B2004100849217 A CNB2004100849217 A CN B2004100849217A CN 200410084921 A CN200410084921 A CN 200410084921A CN 100517775 C CN100517775 C CN 100517775C
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Abstract
This invention provides a semiconductor element increasing brightness and its manufactured method, in which, the element includes a substrate, a passivation layer, a material containing a metallic alloy, a metallic oxide, a metallic nitride, an organic material, an inorganic material or a combined material of them, a reflection layer, a first semiconductor conductive layer, a multi-layer quanta trap structure layer and a second semiconductor conductive layer, in which, said substrate has good conductivity and heat conduction.
Description
Technical field
The present invention relates to one and have the semiconductor light-emitting elements and the manufacture method thereof of promoting brightness, particularly relate to one and have the LED element of promoting brightness and the method for making this LED element thereof.
Background technology
(light emitting diode, LED) since the appearance, along with its performance is constantly improved, the scope of application is also constantly increasing since light-emitting diode.From early stage optical display, until communication device, medical treatment device, even in order to replace traditional lighting device.But, how to promote the brightness of light-emitting diode, be very important problem in this research and development field always.The brightness of element can't infinitely increase along with the increase of electric current, but is subject to the factor of saturated electric current in elder generation's element in the sky.
In influencing brightness all multifactor, the thermal diffusivity of size of component and element is being played the part of critical influence power.Under identical light-emitting area condition, component size is littler, and total brightness will heal greatly in theory.In addition,, not only can increase useful life, also its application can be extended in the product of paramount electric current demand if element itself has good thermal diffusivity.
Taiwan patent announcement number 00567618 discloses a kind of light-emitting diode and method for making thereof with bonding reflector in the denomination of invention " light-emitting diode and method for making thereof with bonding reflector ".By a transparent bonding layer one light-emitting diode and a metallic reflector are bonded together, can be used to improve the brightness of light-emitting diode.
Give Taiwan letters patent book number 149911 invention " with the semiconductor component surfaces alligatoring to promote the method for external quantum efficiency " of same Applicant of the present invention, wherein propose a surface through control growth temperature and the compound semiconductor light-emitting device of alligatoring.For the light-emitting component of aluminum indium nitride gallium series, the effect that this invention obtains with respect to control group, can make brightness promote more than 40%.But and not mentioned improvement on component size or thermal diffusivity.
Therefore, promote brightness and have the semiconductor element and the method for making thereof of good thermal diffusivity, the demand that just can give the outstanding brightness of traditional light-emitting diode, useful life and satisfy the strictness of high electric current product if can provide a kind of.
Summary of the invention
One of the object of the invention is to provide a kind of semiconductor element of promoting brightness that has.Owing to have less component size, under identical light-emitting area condition, total brightness will increase in theory.
Another object of the present invention is to provide a kind of semiconductor element of promoting brightness that has.Because element itself has good thermal diffusivity, so increased the useful life of element.
Another purpose of the present invention is promptly providing a kind of semiconductor element of promoting brightness that has.Because element itself has good thermal diffusivity, in the very suitable product that is applied in high electric current demand.Thus the semiconductor element that method obtained have less component size, long useful life, be more suitable for being applied in the product of high electric current demand.
So the present invention discloses the semiconductor element that a kind of tool is promoted brightness, comprising:
One substrate (substrate) has good electrical conductivity and thermal conductivity;
One protective layer (passivation layer) is positioned on this substrate, is a non-conductive layer;
One reflector is positioned on this protective layer, and an electromagnetic wave is had high reflectance;
One first semiconductor conducting layer is positioned on this reflector;
One multi layer quantum well structure sheaf is positioned on this first semiconductor conducting layer; With
One second semiconductor conducting layer is positioned on this multi layer quantum well structure sheaf,
Wherein this semiconductor light-emitting elements is through the processing of sound wave or excimer laser.
In addition, the present invention still discloses a kind of method of making semiconductor light emitting component, comprises the following steps:
(a) provide one first substrate, have conductivity and thermal conductivity;
(b) form one first semiconductor conducting layer, be positioned on this first substrate;
(c) form a multi layer quantum well structure sheaf, be positioned on this first semiconductor conducting layer;
(d) form one second semiconductor conducting layer, be positioned on this multi layer quantum well structure sheaf;
(e) form a reflector, be positioned on this second semiconductor conducting layer, this reflector has high reflectance to an electromagnetic wave;
(f) forming a protective layer, be positioned on this reflector, is a non-conductive layer;
(g) form one second substrate, be positioned on this protective layer, this second substrate has conductivity and the thermal conductivity that is higher than this first substrate;
(h) remove this first substrate; And
(m) handle this semiconductor light-emitting elements with sound wave or excimer laser.
Description of drawings
Fig. 1 promotes the structural representation of brightness semiconductor element for the present invention;
Fig. 2 promotes in the brightness semiconductor element for the present invention, when protective layer is conduction, and the schematic diagram of electrode position;
Fig. 3 promotes in the brightness semiconductor element for the present invention, when protective layer when being non-conductive, and the schematic diagram of electrode position;
Fig. 4 promotes a preferred embodiment structural representation of brightness semiconductor element for the present invention;
Fig. 5 A to 5C discloses the generalized section that the inventive method is made the semiconductor light emitting component process;
Fig. 6 is in the prepared semiconductor light-emitting elements of method constructed in accordance, when protective layer is conduction, and the schematic diagram of electrode position; And
Fig. 7 is in the prepared semiconductor light-emitting elements of method constructed in accordance, when protective layer when being non-conductive, and the schematic diagram of electrode position.
The simple symbol explanation
1 first substrate, 10 substrates
11,41,63 first electrodes, 12 second substrates
13,43,61 second electrode 20 protective layers
30 reflector, 40,62 first semiconductor conducting layers
50 multi layer quantum well structure sheafs, 42,60 second semiconductor conducting layers
70 transparency conducting layers, 80 adhesive linkages
Embodiment
By the graphic and following explanation of reference the present invention, those skilled in the art can be more readily understood and grasp each details of the present invention with institute's attendant advantages.Yet, it will be understood by a person skilled in the art that protection scope of the present invention is not limited only to the particular instantiation in the specification.
In method of the present invention, be based upon each layer material on the base material, can carry out via the method that those skilled in the art knew, for example organic gas molecule in space deposition (MOCVD), molecular beam epitaxy growth (molecular beam epitaxy, MBE) technology, hydride gas-phase epitaxy growth (hydride vaporphase epitaxy, HVPE) technology, liquid extension (LPE) or vapour deposition method.And layer is reached with the available bond method (eutectic bonding) of melting altogether of engaging of interlayer.
The present invention at first relates to one and has the semiconductor element of promoting brightness; its structure comprises as shown in Figure 1: a substrate 10, a protective layer 20, a reflector 30, one first semiconductor conducting layer 40, a multi layer quantum well structure sheaf 50, with one second semiconductor conducting layer 60.
When setting up the structure of semiconductor element of the present invention, can be prior to setting up the resilient coating of a material such as gallium nitride on the general existing bottom substrate (basesubstrate).Set up again subsequently one second semiconductor conducting layer 60, a multi layer quantum well structure sheaf 50, one first semiconductor conducting layer 40, a reflector 30, with a protective layer 20 after; again selected substrate 10 is based upon on the protective layer 20; and remove the bottom substrate of previous foundation, to finish semiconductor component structure of the present invention.
When protective layer is when conduction, substrate 10 can comprise also that one first electrode, 11, the second semiconductor conducting layers 60 can also comprise one second electrode 61, and first electrode and second electrode be positioned at the homonymy or the heteropleural of semiconductor light-emitting elements, is preferably heteropleural, as shown in Figure 2.Element arrangement like this can make it have less component size, and under identical light-emitting area condition, number of elements increases in theory, and total brightness will increase.
When the character of protective layer when being non-conductive; first semiconductor conducting layer 40 comprises that also one first electrode, 41, the second semiconductor conducting layers 60 also comprise one second electrode 61, and first electrode 41 and second electrode 61 are positioned at the homonymy of semiconductor light-emitting elements; as shown in Figure 3, or heteropleural.If during heteropleural, preferred fabrication passage (channel) makes it conducting.
40 of the reflector 30 in the semiconductor component structure of the present invention and first semiconductor conducting layers can also comprise a transparency conducting layer 70, to increase the luminous efficiency of element.The material of this transparency conducting layer 70 can be little metal of thickness or alloy, for example Ag or Ni/Au or oxide, as indium tin oxide (ITO), zinc oxide, nickel oxide, indium oxide, tin-oxide or sb oxide etc. or nitride, as titanium nitride or titanium tungsten nitride etc.
In addition, between the substrate 10 and protective layer 20 in the semiconductor component structure of the present invention, also can also comprise an adhesive linkage 80, firm in order to guarantee substrate with engaging of heterogeneous (hetro-materials) storerooms such as protective layer.Normally utilization can produce any material that melts bond altogether and reaches this effect, and preferred person is as using elargol, Au/Sn, In/Au or In/Pd etc. forming required adhesive linkage 80, or uses organic material, as polyimides, BCB etc.
If the luminous efficiency that will further promote semiconductor element of the present invention, semiconductor component structure of the present invention be after foundation is finished, can be suitably through the process of a surface coarsening.Reach the method for surface coarsening, can be etching or sandblast (sand-blast).In addition, aforesaid Taiwan letters patent book number 149911 with same Applicant of the present invention is invented the alligatoring semiconductor element that is proposed in " with the method for semiconductor component surfaces alligatoring with the lifting external quantum efficiency ", also lists consideration at this.Usually, behind surface coarsening, can reduce the total reflection of semiconductor element, and then promote the external quantum efficiency of semiconductor element.
In order to ensure the electrical and reliability of semiconductor component structure of the present invention behind the bottom substrate of removing previous foundation, semiconductor component structure of the present invention can be through the processing of an energy waves after foundation is finished.This energy waves is preferably sound wave, microwave or excimer laser.It is a low temperature process that energy waves is handled, wafer itself absorbs microwave energy does not make wafer itself produce high temperature, so the destruction that can not cause reflector, metal level and transparency conducting layer, and light-emitting component is formed the variation of element, be one neither to destroy whole element itself and form structure repairable elements surface crystallization defective again, further can activate again P/N type semiconductor layer in the semiconductor element electrically, the killing three birds with one stone of can saying so.
Generally believe, utilize the energy waves processing can make semiconductor component surfaces,, repair the crystallinity on surface automatically, recover original characteristic of semiconductor because the crystal defect that is caused in the handling procedure because of absorbing microwave energy, allows the atom on surface move.
The present invention can comprise the following steps: with reference to the structural profile schematic diagram of figure 5A to 5C secondly about a kind of method of making semiconductor light emitting component
(a) provide one first substrate 1, have conductivity and thermal conductivity;
(b) form one first semiconductor conducting layer 62, be positioned on this first substrate;
(c) form a multi layer quantum well structure sheaf 50, be positioned on this first semiconductor conducting layer 62;
(d) form one second semiconductor conducting layer 42, be positioned on this multi layer quantum well structure sheaf 50;
(e) form a reflector 30, be positioned on this second semiconductor conducting layer 42,30 pairs one electromagnetic waves in reflector have high reflectance;
(f) form a protective layer 20, be positioned on the reflector 30, protective layer 20 is a non-conductive layer;
(g) form one second substrate 12, be positioned on the protective layer 20, second substrate 12 has conductivity and the thermal conductivity that is higher than first substrate 1; With
(h) remove first substrate 1.
In the method employed first substrate 1 (being aforesaid bottom substrate), second substrate 12 (being aforesaid substrate 10), protective layer 20, reflector 30, first semiconductor conducting layer 62, multi layer quantum well structure sheaf 50, with the character and the kind of each material such as second semiconductor conducting layer 42; know clearly as described above, and repeat no more for those skilled in the art are in common knowledge.
And, can use physical property or chemical polishing, or laser separation process (laser detaching) in order to remove first substrate 1 smoothly.And set up the purpose of protective layer 20, and be in protection reflector 30, make it to avoid inevitably to destroy and injury in the technology.When setting up the structure of semiconductor element of the present invention, can promptly set up the resilient coating of a material such as gallium nitride on first substrate 1 prior to general existing bottom substrate (base substrate) according to preceding method.
Make in the method for semiconductor light emitting component in the present invention, after (d) step, can also comprise: (i) form a transparency conducting layer 70, be positioned on second semiconductor conducting layer 42.Setting up transparency conducting layer 70 can increase the luminous efficiency of element.
In addition, make in the method for semiconductor light emitting component, after (f) step, can also comprise: (j) form an adhesive linkage 80, be positioned on the protective layer 20 in the present invention.Form the purpose of adhesive linkage 80, can guarantee that 20 of second substrate 12 and protective layers wait between dissimilar materials when engaging the mechanical strength on increase composition surface.
And, make in the method for semiconductor light emitting component in the present invention, can also comprise after removing this first substrate: (m) handle this semiconductor light-emitting elements with an energy waves, this energy waves is preferably sound wave, microwave or excimer laser.Utilize the energy waves processing can allow the atom on surface move, repair the crystallinity on surface automatically, the characteristic of semiconductor original with recovery.
When the protective layer of being set up in (f) step has conduction; first semiconductor conducting layer 62 can also comprise one first electrode 63; second substrate 12 can also comprise one second electrode 13, and first electrode 63 and second electrode 13 be positioned at the heteropleural of semiconductor light-emitting elements, as shown in Figure 6.Element arrangement like this can increase total brightness.
When if (f) protective layer of being set up in the step does not have essence conductivity; first semiconductor conducting layer 62 also comprises one first electrode 63; second semiconductor conducting layer 42 also comprises one second electrode 43, and first electrode 63 and second electrode 43 be positioned at the homonymy of semiconductor light-emitting elements, as shown in Figure 7.
Metal bond (Metal Bonding) blue-ray LED embodiment
First embodiment
With one directly the sapphire of epitaxial growth (epitaxy-ready sapphire) substrate be loaded in the organic metal vapour phase epitaxy growth reacting furnace (herein not showing).This single crystal substrates can be aluminium oxide, carborundum or GaAs material.At first, under 1150 ℃ temperature, with sapphire substrates preheating ten minutes.Then, the temperature of sapphire substrates is reduced to about about 500～600 ℃.When the temperature of sapphire substrates was in 520 ℃, the thickness of growing up in its surface was the gallium nitride resilient coating of 25nm.Then, when the temperature increase to 1100 of sapphire substrates ℃, grow up to a Si (silicon doping of the N type) gallium nitride layer that mixes with the growth speed of about 2 μ m/hr on the surface of resilient coating, its thickness is about 4 μ m.And then, sapphire substrates is cooled to about 820 ℃, one InGaN/gallium nitride (InGaN/GaN) the multi-layer quantum well structure (multiple quantum well structure) of and then on N type silicon-doped gallium nitride laminar surface, growing up.This multi-layer quantum well structure is the usefulness as light-emitting active layer.Afterwards, elevated temperature to 1100 ℃, the P type magnesium doping gallium indium nitride layer of on InGaN/gallium nitride multi layer quantum well body structure surface, growing up, epitaxial LED chip (epi-wafer) so just completes.Earlier at wafer surface evaporation transparency conducting layer indium tin oxide (Indium Tin Oxide), thickness is 2650 then
After 10 minutes, follow reflector argent (silver) on the evaporation through the following 500 ℃ of fusions of the situation of logical nitrogen, thickness is 2000
Protective layer indium tin oxide (Indium Tin Oxide) thickness is 3000
Plate a composition gold (Gold) 18000 of adhesive linkage at last
With wafer with plate 25000
The silicon wafer of indium is done the surface and is fitted, and places 200 ℃ of baking boxs interior 2 hours, and the weight that adds a 3kg is on bonded wafer, and last natural cooling was determined to take out wafer again to reach room temperature more than one hour.
With energy density 400mJ/cm
2Wavelength 248nm, the excimer laser uniform irradiation of pulse duration 38ns is on sapphire (Sapphire) substrate, and place heating plate to be warming up to 60 ℃ sapphire (Sapphire) substrate is broken away from, define 300 μ m * 300 μ m element size with dry ecthing (dry etching), and (Ti/Al 600 to plate titanium and aluminium at N type GaN material
/ 2000
), (Ti/Au 600 to plate titanium and gold at silicon substrate
/ 2000) as Ohmic electrode.
Second embodiment
Behind embodiment one making epitaxial wafer, metallic nickel on the wafer surface evaporation (Nickel), thickness is less than 50
After 10 minutes, follow reflector metallic aluminium (Al) on the evaporation through the following 500 ℃ of fusions of the situation of logical oxygen, thickness is 2000
Protective layer TiWN, thickness are 3000
Plate a composition gold (Gold) 18000 of adhesive linkage at last
With wafer with plate 25000
The silicon wafer of indium is done the surface and is fitted, and places 200 ℃ of baking boxs interior 2 hours, and the weight that adds a 3kg is on bonded wafer, and last natural cooling was determined to take out wafer again to reach room temperature more than one hour.
With energy density 400mJ/cm
2Wavelength 248nm, the excimer laser uniform irradiation of pulse duration 38ns is on sapphire (Sapphire) substrate, and place heating plate to be warming up to 60 ℃ sapphire (Sapphire) substrate is broken away from, define 300 μ m * 300 μ m element size with dry ecthing (dry etching), and (Ti/Al 600 at N type GaN material titanizing and aluminium
/ 2000
), titanizing and gold (Ti/Au600 on silicon substrate
/ 2000) as Ohmic electrode.
By the above narration that is regarded as the preferred specific embodiment of the present invention at present, hope can be known description feature of the present invention and spirit more.Yet, the non-restriction of above disclosed preferred specific embodiment for institute of the present invention desire protection category.On the contrary, the change arrangement of aforesaid explanation and various isotropisms thereof is all the protection category that the present invention desires to be subjected to.Therefore the category of claim of the present invention should be done the broadest explanation according to above-mentioned explanation, contain simultaneously claim described with and all may be impartial in fact change and impartial arrangements.
Claims (10)
1, a kind of semiconductor light-emitting elements comprises:
One substrate has conductivity and thermal conductivity;
One protective layer is positioned on this substrate, is a non-conductive layer;
One reflector is positioned on this protective layer, and this reflector is in order to reflect an electromagnetic wave;
One first semiconductor conducting layer is positioned on this reflector;
One multi layer quantum well structure sheaf is positioned on this first semiconductor conducting layer; With
One second semiconductor conducting layer is positioned on this multi layer quantum well structure sheaf,
Wherein this semiconductor light-emitting elements is through the processing of sound wave or excimer laser.
2, semiconductor light-emitting elements as claimed in claim 1 wherein also comprises a transparency conducting layer between this reflector and this first semiconductor conducting layer.
3, semiconductor light-emitting elements as claimed in claim 1 wherein also comprises an adhesive linkage between this substrate and this protective layer.
4, semiconductor light-emitting elements as claimed in claim 1 also comprises one first electrode that is positioned on this substrate, and is positioned at one second electrode on this second semiconductor conducting layer, and this first electrode and this second electrode are positioned at the heteropleural of this semiconductor light-emitting elements.
5, semiconductor light-emitting elements as claimed in claim 1, also comprise one first electrode that is positioned on this substrate, and be positioned at one second electrode on this second semiconductor conducting layer, and this first electrode and this second electrode are positioned at the same side of this semiconductor light-emitting elements.
6, a kind of method of making semiconductor light emitting component comprises the following steps:
(a) provide one first substrate;
(b) form one first semiconductor conducting layer, be positioned on this first substrate;
(c) form a multi layer quantum well structure sheaf, be positioned on this first semiconductor conducting layer;
(d) form one second semiconductor conducting layer, be positioned on this multi layer quantum well structure sheaf;
(e) form a reflector, be positioned on this second semiconductor conducting layer, this reflector is in order to reflect an electromagnetic wave;
(f) form a protective layer, be positioned on this reflector, this protective layer is a non-conductive layer;
(g) form one second substrate, be positioned on this protective layer, this second substrate has conductivity and the thermal conductivity that is higher than this first substrate;
(h) remove this first substrate; And
(m) handle this semiconductor light-emitting elements with sound wave or excimer laser.
7, method as claimed in claim 6 wherein also comprises after this (d) step:
(i) form a transparency conducting layer, be positioned on this second semiconductor conducting layer.
8, method as claimed in claim 6 wherein also comprises after this (f) step:
(j) form an adhesive linkage, be positioned on this protective layer.
9, method as claimed in claim 6 also comprises:
(k) form one first electrode on this first semiconductor conducting layer, and form one second electrode on this second substrate, wherein this first electrode and this second electrode are positioned at the heteropleural of this semiconductor light-emitting elements.
10, method as claimed in claim 6 also comprises:
(l) form one first electrode on this first semiconductor conducting layer, and form one second electrode on this second semiconductor conducting layer, wherein this first electrode and this second electrode are positioned at the same side of this semiconductor light-emitting elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100849217A CN100517775C (en) | 2004-10-10 | 2004-10-10 | Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof |
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|---|---|---|---|
| CNB2004100849217A CN100517775C (en) | 2004-10-10 | 2004-10-10 | Semiconductor light-emitting componnoet with brightness increasing and manufacturing method thereof |
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| CN1758449A CN1758449A (en) | 2006-04-12 |
| CN100517775C true CN100517775C (en) | 2009-07-22 |
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| US8436334B2 (en) * | 2007-10-12 | 2013-05-07 | Agency For Science, Technology And Research | Fabrication of phosphor free red and white nitride-based LEDs |
| CN108133986A (en) * | 2017-11-27 | 2018-06-08 | 北京灵犀微光科技有限公司 | Light emitting diode and lighting device |
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Effective date of registration: 20060310 Address after: Hsinchu city of Taiwan Province Applicant after: Jingyuan Optoelectronics Co., Ltd. Address before: Hsinchu Science Industrial Park, Taiwan Applicant before: Guolian Photoelectric Science and Technology Co., Ltd. |
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