CN1747622A - Metal-base circuit carrier - Google Patents
Metal-base circuit carrier Download PDFInfo
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- CN1747622A CN1747622A CN 200510003144 CN200510003144A CN1747622A CN 1747622 A CN1747622 A CN 1747622A CN 200510003144 CN200510003144 CN 200510003144 CN 200510003144 A CN200510003144 A CN 200510003144A CN 1747622 A CN1747622 A CN 1747622A
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- metal
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- insulating thin
- circuit carrier
- base circuit
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Abstract
A metal-based carrier of circuit is composed of a metallic substrate, an insulating film layer on said substrate, and a composite metallic layer on said insulating film layer for preparing circuit or soldering elements on it. Its advantages are high heat dissipating effect and strength and small sizes.
Description
Technical field:
The present invention relates to a kind of metal-base circuit carrier that is used to make circuit and bearer circuit device, relate in particular to the metal-base circuit carrier of a kind of nanocomposite dielectric and compound circuit layer, belong to the circuit carrier technical field.
Background technology:
At present, circuit carrier of the prior art generally all adopts plastics, bakelite or other insulating material to make, these adopt the circuit carrier (as printed circuit board carrier) of insulating material making though have the advantage of good insulation preformance, exist the problem that volume is big, heat dispersion is poor, mechanical strength is lower.So existing circuit carrier in use, and its result of use still is not ideal enough.
Summary of the invention:
The objective of the invention is to: provide a kind of perfect heat-dissipating, volume is less, mechanical strength is higher metal-base circuit carrier, to overcome the deficiencies in the prior art.
The present invention is achieved in that this circuit carrier is made up of matrix (1), insulating thin layer (2) and complex metal layer, the flat metallic matrix that matrix (1) is made into for metal material, surface coverage at flat metallic matrix has one deck insulating thin layer (2), is provided with the complex metal layer that is used to make circuit or welding circuit components and parts on insulating thin layer (2).
The metal material of making matrix (1) is aluminium, copper, iron, steel, titanium, molybdenum or nickel metal material.
The metal material of making matrix (1) is aluminium alloy, copper alloy, ferroalloy, titanium alloy, molybdenum alloy or nickel alloy metal alloy compositions.
The material of insulating thin layer (2) is the nanocomposite dielectric material, and the film thickness of insulating thin layer (2) is not more than 30 microns.
The metallic compound nano dielectric of insulating thin layer (2) for adopting low temperature electrochemical or plasma method to be prepared into.
Be used to prepare the solution of the low temperature electrochemical solution of insulating thin layer (2) for preparation Al, Ti, Ta, Ni, Cr, Si, Zn element formation oxide.
Complex metal layer is formed by covering the surperficial transition zone (3) of insulating thin layer (2) and being connected the surperficial conductive layer (4) of transition zone (3).
The material of transition zone (3) is nickel or chromium metal material or nickel, chromium alloy material, and adopts electroless plating method or physical vaporous deposition to prepare transition zone (3) on insulating thin layer (2).
Complex metal layer is made up of with the conductive layer (4) that is connected with metalfilmresistor layer (5) the metalfilmresistor layer (5) that covers insulating thin layer (2) surface.
Metalfilmresistor layer (5) is to adopt the bonding process preparation of electroless plating method, physical vaporous deposition or hot pressing and get.
The material of conductive layer (4) is copper or silver metal material, and adopts galvanoplastic or electroless plating method to be prepared conductive layer (4);
Also can adopt the bonding process of hot pressing to prepare conductive layer (4) on transition zone (3) or on the metalfilmresistor layer (5).
Complex metal layer is made up of transition zone (3) that covers insulating thin layer (2) surface and the solderable layer (6) that is connected on the transition zone (3).
The material of solderable layer (6) is: Sn, Ag, Ni, Au, and adopt chemical plating, plating, plasma evaporation or sputtering method to be prepared.
In the time of will being used to make the complex metal layer making circuit of circuit or welding circuit components and parts, can adopt the printing etching method that complex metal layer is made into circuit.
The complex metal layer that insulating thin layer (2) and being used to is made circuit or welding circuit components and parts is located at the single or double of matrix (1).
Because having adopted technique scheme, the present invention to utilize metal is the carrier of Metal Substrate as circuit or microcircuit.Metal generally all is a good conductor, be as circuit or microcircuit carrier material, and the Insulation Problems on its Metal Substrate surface in the time of must solving circuit production or the circuit elements device is installed.In case the insulation isolating problem is resolved, sheet metal can be used as the carrier material of circuit or microcircuit making, can partly substitute traditional circuit carrier material like this, the integrated level of Circuits System equipment, the reserve capacity and the reliability of chip electronic component are improved greatly.And the present invention has solved the Insulation Problems on Metal Substrate surface effectively.Thin dielectric film material filming size of microcrystal of the present invention is in nanometer scale (10 nanometer), about 10 microns～20 microns of thickness.In breakdown field strength 5 * 10
4Under the condition of V/mm, the material surface insulation resistivity is greater than 10
12Ω cm, surface withstand voltage intensity is 200～1000 volts, material breakdown electric field strength is greater than 10
5V/mm.Using plasma deposition techniques of the present invention and electrochemical growth technology are in conjunction with the metal-oxide dielectric microparticle is produced on the metal surface, form thin dielectric film, this dielectric film with nanoscale particle diameter structure film forming and metal surface in conjunction with forming fine and close dielectric isolation layer, thereby constituted compound matrix material.The present invention is by a large amount of experiments, research and summary, suitable metal oxide materials and metal base have been selected, obtained the dielectric strength height, the insulating thin layer of the nanocomposite dielectric material of stable electrochemical property, and on insulating thin layer, produce complex metal layer, promptly at the plasma deposition of enterprising row metal conductive strips of insulating thin layer (lead) and metallic resistance band, electroplate thickening, with forming circuit sheet material, or to paste Copper Foil, the nichrome paper tinsel constitutes metal copper-clad plate and metallic resistance plate, be that available printing etching method is produced concrete circuit structure by instructions for use like this on metal-base circuit carrier of the present invention, or constitute thick, film or SMT technology.
Therefore, the present invention compared with prior art, the present invention not only has perfect heat-dissipating, volume is less, mechanical strength is high advantage, and the present invention also has advantages such as anti-aging, no organic volatile, convenient engineering installation, and all right recycling of the present invention reduces the pollution of electronic waste to environment.
Description of drawings:
Accompanying drawing 1 is made up of transition zone and conductive layer for complex metal layer of the present invention and insulating thin layer and the complex metal layer structural representation when being located at the matrix single face;
Accompanying drawing 2 for complex metal layer of the present invention by the metalfilmresistor layer with conductive layer is formed and insulating thin layer and the complex metal layer structural representation when being located at the matrix single face;
Accompanying drawing 3 is made up of transition zone and solderable layer for complex metal layer of the present invention and insulating thin layer and complex metal layer are located at structural representation when matrix double-faced.
Embodiment:
Embodiments of the invention 1: use aluminium, copper, iron, steel, titanium, molybdenum, nickel or aluminium alloy of the prior art, copper alloy, ferroalloy, titanium alloy, one kind of metallic sheet material such as molybdenum alloy or nickel alloy is as the material of matrix (1), this piece matrix (1) is carried out surfacing earlier to be ground, polishing, deoil etc. after the preliminary treatment, adopt low temperature electrochemical of the prior art or plasma method to go out layer of metal compound nano dielectric material layer as insulating thin layer (2) again in the surface preparation of matrix (1), when the surface preparation metallic compound nano dielectric material layer that adopts the low temperature electrochemical method at matrix (1), the low temperature electrochemical solution that is adopted is preparation Al, Ti, Ta, Ni, Cr, Si, the Zn element forms the solution of oxide, the film thickness of insulating thin layer (2) is controlled at is not more than 30 microns; Go up at insulating thin layer (2) then and make complex metal layer, complex metal layer is made up of transition zone (3) and conductive layer (4), during making, be material and adopt electroless plating method of the prior art or physical vaporous deposition is prepared one deck transition zone (3) on insulating thin layer (2) that with nickel, chromium or nickel, evanohm this transition zone (3) mainly is the adhesive force that is used for the dielectric surface of reinforced insulation thin layer (2); Making transition zone (3) afterwards, adopting traditional galvanoplastic or electroless plating method to produce one deck on transition zone (3) is the conductive layer (4) of conductive metallic material with copper or silver, also can adopt the bonding process of traditional hot pressing upward to paste one deck Copper Foil or silver foil as conductive layer (4), can make metal-base circuit carrier of the present invention like this at transition zone (3).Can be during making according to the needs that use as stated above with insulating thin layer (2) and the complex metal layer that is used to make circuit or welding circuit components and parts be produced on the single or double of matrix (1).When metal-base circuit carrier of the present invention is used to make concrete application circuit, can adopt traditional printing etching method that the circuit that complex metal layer is made into practical application is got final product according to the needs that use.
Embodiments of the invention 2: produce matrix (1) and insulating thin layer (2) earlier by embodiment 1 described method, on insulating thin layer (2), produce the complex metal layer of forming by metalfilmresistor layer (5) and conductive layer (4) then, when making metalfilmresistor layer (5), can adopt conventional metalfilmresistor material and on the surface of insulating thin layer (2), produce layer of metal film resistive layer (5) by traditional electroless plating method or physical vaporous deposition, also can adopt the bonding process of traditional hot pressing to go up and paste one deck nichrome paper tinsel as metalfilmresistor layer (5) at insulating thin layer (2), and then on metalfilmresistor layer (5), produce one deck conductive layer (4) by embodiment 1 described method, can make another kind of metal-base circuit carrier of the present invention like this.When using this metal-base circuit carrier, can be according to the needs that use, the requirement of adopting traditional distribution etch to use by reality is made into circuit practical application and that be provided with resistance with its complex metal layer and gets final product.
Embodiments of the invention 3: produce matrix (1) and insulating thin layer (2) earlier by embodiment 1 described method, on insulating thin layer (2), produce the complex metal layer of forming by transition zone (3) and solderable layer (6) then, its transition zone (3) can adopt the method for embodiment 1 to make, adopting methods such as traditional chemical plating, plating, plasma evaporation or sputter to make one deck on the surface of transition zone (3) then is the solderable layer (6) of material with Sn, Ag, Ni or Au, can make another metal-base circuit carrier of the present invention like this.When using this metal-base circuit carrier, can adopt traditional printing etching method to use the requirement of circuit that its complex metal layer is made into circuit practical application and that be provided with solderable layer and get final product according to the needs that use by reality.
Claims (16)
1, a kind of metal-base circuit carrier, it is characterized in that: this circuit carrier is made up of matrix (1), insulating thin layer (2) and complex metal layer, the flat metallic matrix that matrix (1) is made into for metal material, surface coverage at flat metallic matrix has one deck insulating thin layer (2), is provided with the complex metal layer that is used to make circuit or welding circuit components and parts on insulating thin layer (2).
2, metal-base circuit carrier according to claim 1 is characterized in that: the metal material of making matrix (1) is aluminium, copper, iron, steel, titanium, molybdenum or nickel metal material.
3, metal-base circuit carrier according to claim 1 is characterized in that: the metal material of making matrix (1) is aluminium alloy, copper alloy, ferroalloy, titanium alloy, molybdenum alloy or nickel alloy metal alloy compositions.
4, metal-base circuit carrier according to claim 1 is characterized in that: the material of insulating thin layer (2) is the nanocomposite dielectric material, and the film thickness of insulating thin layer (2) is not more than 30 microns.
5, metal-base circuit carrier according to claim 4 is characterized in that: the metallic compound nano dielectric of insulating thin layer (2) for adopting low temperature electrochemical or plasma method to be prepared into.
6, metal-base circuit carrier according to claim 5 is characterized in that: be used to prepare the solution of the low temperature electrochemical solution of insulating thin layer (2) for preparation Al, Ti, Ta, Ni, Cr, Si, Zn element formation oxide.
7, metal-base circuit carrier according to claim 1 is characterized in that: complex metal layer is formed by covering the surperficial transition zone (3) of insulating thin layer (2) and being connected the surperficial conductive layer (4) of transition zone (3).
8, metal-base circuit carrier according to claim 7, it is characterized in that: the material of transition zone (3) is nickel or chromium metal material or nickel, chromium alloy material, and adopts electroless plating method or physical vaporous deposition to prepare transition zone (3) on insulating thin layer (2).
9, metal-base circuit carrier according to claim 1 is characterized in that: complex metal layer is made up of with the conductive layer (4) that is connected with metalfilmresistor layer (5) the metalfilmresistor layer (5) that covers insulating thin layer (2) surface.
10, metal-base circuit carrier according to claim 9 is characterized in that: metalfilmresistor layer (5) is to adopt the bonding process preparation of electroless plating method, physical vaporous deposition or hot pressing and get.
11, according to claim 7 or 9 described metal-base circuit carriers, it is characterized in that: the material of conductive layer (4) is copper or silver metal material, and adopts galvanoplastic or electroless plating method to be prepared conductive layer (4).
12, according to claim 7 or 9 described metal-base circuit carriers, it is characterized in that: also can adopt the bonding process of hot pressing to prepare conductive layer (4) on transition zone (3) or on the metalfilmresistor layer (5).
13, metal-base circuit carrier according to claim 1 is characterized in that: complex metal layer is made up of transition zone (3) that covers insulating thin layer (2) surface and the solderable layer (6) that is connected on the transition zone (3).
14, metal-base circuit carrier according to claim 13 is characterized in that: the material of solderable layer (6) is: Sn, Ag, Ni, Au, and adopt chemical plating, plating, plasma evaporation or sputtering method to be prepared.
15, metal-base circuit carrier according to claim 1 is characterized in that: in the time of will being used to make the complex metal layer making circuit of circuit or welding circuit components and parts, can adopt the printing etching method that complex metal layer is made into circuit.
16, metallic circuit carrier according to claim 1 is characterized in that: the complex metal layer that insulating thin layer (2) and being used to is made circuit or welding circuit components and parts is located at the single or double of matrix (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510003144 CN1747622A (en) | 2005-07-26 | 2005-07-26 | Metal-base circuit carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510003144 CN1747622A (en) | 2005-07-26 | 2005-07-26 | Metal-base circuit carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1747622A true CN1747622A (en) | 2006-03-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510003144 Pending CN1747622A (en) | 2005-07-26 | 2005-07-26 | Metal-base circuit carrier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102711364A (en) * | 2012-04-13 | 2012-10-03 | 乐健线路板（珠海）有限公司 | Printed circuit board realizing weldable metal mini-heat-radiators by metal aluminum and manufacturing method of printed circuit board |
| CN101874335B (en) * | 2007-11-27 | 2012-11-21 | 伊纳驱动及机电有限商业两合公司 | Electric linear drive |
| CN105007686A (en) * | 2015-06-17 | 2015-10-28 | 安徽达胜电子有限公司 | Circuit-used circuit board |
-
2005
- 2005-07-26 CN CN 200510003144 patent/CN1747622A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101874335B (en) * | 2007-11-27 | 2012-11-21 | 伊纳驱动及机电有限商业两合公司 | Electric linear drive |
| CN102711364A (en) * | 2012-04-13 | 2012-10-03 | 乐健线路板（珠海）有限公司 | Printed circuit board realizing weldable metal mini-heat-radiators by metal aluminum and manufacturing method of printed circuit board |
| CN102711364B (en) * | 2012-04-13 | 2013-12-11 | 乐健科技（珠海）有限公司 | Printed circuit board realizing weldable metal mini-heat-radiators by metal aluminum and manufacturing method of printed circuit board |
| CN105007686A (en) * | 2015-06-17 | 2015-10-28 | 安徽达胜电子有限公司 | Circuit-used circuit board |
| CN105007686B (en) * | 2015-06-17 | 2018-07-24 | 安徽达胜电子有限公司 | A kind of circuit wiring board |
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Owner name: GUIZHOU UNIV. Free format text: FORMER OWNER: LIU QIAO; APPLICANT Effective date: 20070302 |
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Effective date of registration: 20070302 Address after: 550025 North Campus of Guizhou University, Guizhou, Guiyang Applicant after: Guizhou University Address before: Huaxi District of Guizhou province 550025 Guiyang Huayu Garden Villa three unit 702 room Applicant before: Liu Qiao Co-applicant before: Wang Zhongliang |
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