CN1739064A - Photoresist removal - Google Patents
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- CN1739064A CN1739064A CN 200380109011 CN200380109011A CN1739064A CN 1739064 A CN1739064 A CN 1739064A CN 200380109011 CN200380109011 CN 200380109011 CN 200380109011 A CN200380109011 A CN 200380109011A CN 1739064 A CN1739064 A CN 1739064A
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Abstract
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
Description
Related application
The sequence number that the application has required on Dec 20th, 2002 to submit to is 60/434,971 U.S. Provisional Application No..
Invention field
The present invention relates to semi-conductive processing, more specifically, relate to the removal of photoresist.
Background of invention
Make integrated circuit by following sequential steps: photoresist is coated on the substrate,, pattern transfer is arrived substrate and removes photoresist by exposure and video picture shaping photoresist layer.Repeat above-mentioned steps, form multi-layered patterned circuit.For the removal step of photoresist,, therefore use plasma ashing usually owing under the situation of not damaging other material, only be difficult to maybe can not remove the etching photoresist residue by wet-cleaned.
The composition that positive photoresist dissolves in alkaline aqueous solution and is made up of selected organic and mineral compound.Yet, be exposed to the gas phase plasma etching and can have formed hard shell or residue from the teeth outwards usually as the photoresist that the gas phase plasma that is used for the etching media material loses agent.This residue is made of crosslinked organic polymer usually, and may contain a spot of silicon, metal and halogen or other atom.
Damascene or dual-metal inserting technology are used aforesaid plasma etching usually.This plasma etching can be the fluorine-based plasma etching that is used for medium (ILD) material between etching silicon hydrochlorate basic unit.Above-mentioned material can comprise silicate, organosilicate and fluosilicate.Fluorine-based plasma etching can make the crosslinked organic polymer that forms above-mentioned residue fluoridize.Fluoridize usually and can improve chemical-resistant.Thus, if possible, be difficult to remove these residues by conventional wet method stripping technology.Use oxidation or reduction plasma ashing can remove residue.Yet plasma ashing is easy to damage the ILD material, especially the ILD material of low-k.
Therefore, the removal of photoresist needs to remove the photoresist residue and does not damage the ILD material.
Summary of the invention
The invention discloses the composition and the method that are used for semiconductor machining.In one embodiment, provide the wet-cleaned composition that is used to remove photoresist.Said composition comprises highly basic; Oxygenant; And polar solvent.
In another embodiment, provide the method that is used to remove photoresist.This method comprises the steps: that (i) coating comprises the about 30wt% highly basic of about 0.1-, the wet-cleaned composition of about 30wt% oxygenant of about 1-and the about 95wt% polar solvent of about 20-; (ii) remove photoresist.
By understanding the present invention and other features and advantages of the present invention more fully with reference to following detailed description and accompanying drawing.
DESCRIPTION OF THE PREFERRED
Herein disclosed is the composition and the method that are used for semiconductor machining.According to an aspect of the present invention, provide the wet-cleaned composition that is used to remove photoresist.Said composition comprises highly basic.For example, even accounted for being no more than of solution at about 3.5% o'clock at this highly basic, this highly basic also can obtain pH greater than about 11.5 solution.That is to say that this highly basic can be no more than about 3.5wt% of solution.Yet as further described herein, higher strong base concentrations may be desirable.This highly basic helps to remove photoresist, for example unexposed positive photoresist.Said composition also comprises oxygenant and polar solvent.Can use the highly basic of following formula I according to instruction of the present invention.
R wherein
1, R
2, R
3And R
4Be respectively hydrogen, alkyl or substituted alkyl.The non-limiting ammonium hydroxide that comprises of highly basic that is fit to, tetramethylammonium hydroxide (TMAH), bursine, and the combination that comprises at least a above-mentioned highly basic.In exemplary, highly basic comprises tetramethylammonium hydroxide.
Described cleaning combination or solution are specially adapted to clean the photoresist residue on the semiconductor chip.For example, in one embodiment, make the semiconductor chip patterning to form groove.This is by method is with photoresist carried out.Can remove photoresist and any residue from groove and substrate with described cleaning solution.Semiconductor feature such as metal wire can form in groove, makes the metal wire insulation by chemical-mechanical planarization then.Then carry out further semiconductor machining to form complete semiconductor equipment.
In exemplary, composition of the present invention comprises the highly basic more than or equal to about 0.1wt%, is preferably greater than or equals the highly basic of about 1wt%, more preferably greater than or equal the highly basic of about 5wt%.In exemplary, composition of the present invention further comprises the highly basic that is less than or equal to about 30wt%, preferably is less than or equal to the highly basic of about 20wt%, is more preferably less than or equals the highly basic of about 10wt%.
Said composition further comprises oxygenant.Non-limiting inorganic oxidizer, the organic oxidizing agent of comprising of oxygenant that is fit to, for example amine-N-oxide, perborate, persulfate, percarbonate and the combination that comprises at least a above-mentioned oxygenant.In exemplary, oxygenant comprises organic oxidizing agent.According to instruction of the present invention, can use the organic oxidizing agent of following general formula I I.
R wherein
1, R
2And R
3Can be hydrogen, methyl or other replacement or unsubstituted alkyl.R
1And R
2Can form the two ends of alkyl chain.
Although can use superoxide such as hydrogen peroxide and substituted alkyl or aryl peroxides according to instruction of the present invention, to compare with common superoxide, the advantage of amine-N-oxide is more gentle oxygenant.And, compare amine-N-oxide with common superoxide and decompose slower.Particularly known hydrogen peroxide decomposes fast in alkaline environment and produces oxygen and water, and above-mentioned condition especially can cause the short dipping bath life-span in temperature during greater than room temperature.In addition, hydrogen peroxide is unsettled when having oxidable organic substance such as amine and alcohol.Therefore, according to instruction of the present invention, preferred non-peroxide oxidant.
In exemplary, composition of the present invention comprises the oxygenant more than or equal to about 1wt%, is preferably greater than or equals the oxygenant of about 5wt%, more preferably greater than or equal the oxygenant of about 10wt%.In exemplary, composition of the present invention further comprises the oxygenant that is less than or equal to about 30wt%, preferably is less than or equal to the oxygenant of about 20wt%, is more preferably less than or equals the oxygenant of about 15wt%.
The present composition further comprises polar solvent.Ion component in this polar solvent dissolving photoresist and the photoresist residue.The polar solvent that is fit to comprises water, ethylene glycol, propylene glycol, other diol solvent, glycol ethers, alcohol, acid amides, carbonic ester and the combination that comprises at least a above-mentioned polar solvent.In exemplary, polar solvent comprises water, and this is because it is low-cost and nontoxic.
In exemplary, composition of the present invention comprises the polar solvent more than or equal to about 20wt%, is preferably greater than or equals the polar solvent of about 30wt%, more preferably greater than or equal the polar solvent of about 40wt%.In exemplary, composition of the present invention further comprises the polar solvent that is less than or equal to about 95wt%, preferably is less than or equal to the polar solvent of about 85wt%, is more preferably less than or equals the polar solvent of about 75wt%.
The present composition may further include sequestrant.The sequestrant that is fit to is non-limiting to be comprised not substituted triazole class, substituted triazole class, thiazoles, tetrazolium class, imidazoles, phosphoric acid ester, thio-alcohol and azines, glycerols, amino acids, carboxylic acids, alcohols, amide-type, quinolines and comprises at least a above-mentioned combination of chelating agents.
Non-limiting 1,2,3-triazoles and 1,2 of comprising of substituted triazole class not, the 4-triazole.In addition, triazole type can and comprise that at least a above-mentioned substituent combination replaces by alkyl, amino, benzo base, mercapto, sulfydryl, imino group, carboxyl, nitro.The non-limiting benzotriazole that comprises of substituted triazole class, polytriazoles, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-1,2,4-triazole, 1-amino-5-methyl isophthalic acid, 2,3-triazole, hydroxybenzotriazole, 2-(5-amino-phenyl)-benzotriazole, 3-amino-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 3-sulfydryl-1,2, the 4-triazole, 5-phenyl sulfo--benzotriazole, halo benzotriazole, aphthotriazoles.Thiazoles, the tetrazolium class, imidazoles, phosphoric acid ester, the non-limiting 2-mercaptobenzimidazole that comprises of thio-alcohol and azines, 2-mercaptobenzothiazole, 5-Aminotetrazole, 5-amino-1,3,4-thiadiazoles-2-mercaptan, thiazole, triazine, methyl tetrazolium, 1,3-dimethyl-2-imidazolone, 1, the 5-pentamethylene tetrazole, 1-phenyl-5-mercapto-tetrazole, diamido methyl triazine, mercaptobenzothiazoler, imidazolidinethione, mercaptobenzimidazole, 4-methyl-4H-1,2,4-triazole-3-mercaptan, benzothiazole, tricresyl phosphate, indiazole, and the combination that comprises at least a above-claimed cpd.Glycerols, amino acids, carboxylic acids, alcohols, amide-type, the non-limiting guanine that comprises of quinolines, adenine, glycerine, thioglycerin, nitrilotriacetic acid(NTA), salicylamide, iminodiacetic acid, benzoguanamine, melamine, thiocyanuric acid, anthranilic acid, oxine, 5-carboxylic acid-benzotriazole, 3-mercaprol, boric acid and iminodiacetic acid.
Can in composition, add etching or the corrosion of sequestrant when being exposed to composition to avoid metal surface such as copper, tungsten, aluminium and alloy thereof.Therefore, can use the compatibility of sequestrant with used metal and insulating material in raising composition and the semiconductor equipment.
In exemplary, composition of the present invention comprises the sequestrant that is less than or equal to about 10wt%, preferably is less than or equal to the sequestrant of about 7wt%, is more preferably less than or equals the sequestrant of about 4wt%.
The present composition can further comprise cosolvent.Can add cosolvent to improve the performance of composition, the i.e. ability of composition expansion, dissolving and stripping photoresist residue.Suitable cosolvent is non-limiting to be comprised such as N, N-dimethyl diglycolamine, 1, the substituted alkyl amine or the alkanol amine of 8-diazabicyclo [5.4.0] undecylene, aminopropyl morpholine, triethanolamine, methylethanolamine, glycols such as ethylene glycol, diglycol, propylene glycol, neopentyl glycol, such as the glycol ethers of carbitol, dipropylene glycol propyl ether, ethylene glycol phenyl ether, dipropylene glycol butyl ether, butylcarbitol, polyglycol ether, and the combination that comprises at least a above-mentioned cosolvent.
In addition, this cosolvent should be a polarity.Polar compound is will be with polar solvent miscible and can dissolved ions material, for example tetramethylammonium hydroxide.In exemplary, the present composition comprises the cosolvent that is less than or equal to about 50wt%, preferably is less than or equal to the cosolvent of about 30wt%, is more preferably less than or equals the cosolvent of about 20wt%.
Said composition can further comprise surfactant.Can add surfactant peels off insoluble photoresist residue with help and reduces contingent silicon etching when being exposed to highly basic.Non-limiting negative ion, kation and the non-ionic surfactant of comprising of suitable surfactant, fluoroalkyl surfactants for example, polyethylene glycols, polypropylene glycols, polyglycol or polypropylene glycol ethers, metal carboxylate, dodecylbenzene sulfonic acid or its esters, polyacrylate polymers, siloxane or modified silicone polymers, acetylenic diols or modified acetylenic diols, alkylammonium salt or modification alkylammonium salt, and the combination that comprises at least a above-mentioned surfactant.
In exemplary, composition of the present invention comprises the surfactant that is less than or equal to about 20wt%, preferably is less than or equal to the surfactant of about 15wt%, is more preferably less than or equals the surfactant of about 10wt%.
Another aspect of the present invention provides the method for removing photoresist.This method comprises that coating comprises the about 30wt% highly basic of about 0.1-, the wet-cleaned composition of about 30wt% oxygenant of about 1-and the about 95wt% polar solvent of about 20-; (ii) remove photoresist.
All term photoresists of this paper can generally be applicable to any layer that contains photoresist.So, for example according to instruction of the present invention, can use herein composition and method to remove photoresist and photoresist residue.In addition, instruction of the present invention can be applicable to the removal of any photoresist residue, promptly is derived from the non-limiting etch process that comprises fluorine-based plasma etching.
Although described exemplary of the present invention, should understand the present invention and be not limited to above-mentioned clear and definite embodiment, those skilled in the art can carry out multiple other change or correction and not depart from the scope of the present invention or spirit.The following examples that provided are for scope and spirit of the present invention are described.Because given embodiment only is exemplary, so the present invention that embodiment embodied should be not limited to embodiment.
Embodiment
Following preparation can wash photoresist substantially from semiconductor chip.According to instruction of the present invention, wash substantially and be meant from semiconductor equipment and wash photoresist that this can detect by photoelectric microscope greater than 80%.Substrate used herein comprises the chemical amplification photoresist on the silicon chip that is coated on the organosilicate insulating coating.In addition, make photoresist be exposed to the irradiation and the video picture of patterning, then by plasma etching with design transfer to insulator.
Embodiment 1
Be prepared as follows composition A:
| Composition A | |
| Component | Percent by weight |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 7.3 |
| Water | 79.2 |
N-methylmorpholine-N-oxide is provided in the present embodiment and uses with 50wt% solution, tetramethylammonium hydroxide (TMAH) is provided simultaneously and uses, and use N-methylmorpholine-N-oxide and tetramethylammonium hydroxide (TMAH) in other embodiments with 25wt% solution.
By in composition A, flooding 20 minutes cleaning photoetching glue substrates at 70 ℃.Viewed as photoelectric microscope, all photoresists and etch residue from substrate get on except.Do not observe the obvious etching of insulating material.
Embodiment 2
Contain 13.5wt%N-methyl morpholine-N-oxide shown in being prepared as follows respectively, 7.3wt%TMAH, composition B, C and the D of 78.9wt% water and 0.3wt% inhibitor 2-mercaptobenzimidazole (2-MBI).In preparation, contain 2-MBI with the etching of the solution that delays in embodiment 3, can see to copper or other material.
| Composition | Adjuvant |
| B | 2,4-diamido-6-methyl isophthalic acid, 3,5-triazine |
| C | 5-amino-1,3,4-thiadiazoles-2-mercaptan |
| D | 2-mercaptobenzimidazole |
By in remover, flooding 20 minutes cleaning photoetching glue substrates at 70 ℃.
Embodiment 3
Use the composition A-D of above-mentioned preparation to measure the etch-rate that does not have coated copper (Cu) on the silicon chip.By physical vapor deposition cement copper layer, thickness is about 1000 dusts ().Sample is flooded the set time in composition, and use the four-point probe electrometric method to measure the thickness of dipping front and back.By with the thickness difference before and after the etching divided by in minute the Time Calculation etch-rate.The etch-rate of composition A-D is as follows.
| Composition | At 70 ℃ Cu etch-rates (/min) |
| A | 15.8 |
| B | 1.5 |
| C | 3.2 |
| D | 1.1 |
Embodiment 4
Be prepared as follows composition E:
| Composition E | |
| Component | Percent by weight |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 7.5 |
| 2-mercaptobenzimidazole | 0.08 |
| Water | 64.1 |
| N, N-dimethyl diglycolamine | 15.0 |
| Polyglycol 4-nonylplenyl ether | 0.05 |
Polyglycol 4-nonylplenyl ether is the surfactant that contains 5 ethylene glycol repeat units of having an appointment.70 ℃ flooded in composition E after 15 minutes, got rid of 100% photoresist residue from semi-conductive Zone Full.
Embodiment 5
Be prepared as follows composition F:
| Composition F | |
| Component | Percent by weight |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 6.5 |
| 2-mercaptobenzimidazole | 0.01 |
| Water | 76.09 |
| Non-ion fluorin surfactant | 0.1 |
By 70 ℃ with 1000 wafers of polysilicon part respectively in composition A and F dipping determined composition A and F potential etch effect in 15 minutes to polysilicon.Composition F does not show observable etching or the roughening to polysilicon surface.It is slight observable coarse that composition A then becomes polysilicon surface.
Embodiment 6
Be prepared as follows composition G:
| Composition G | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 6.5 |
| 2-mercaptobenzimidazole | 0.01 |
| Water | 79.9 |
| Modification acetylenic glycols surfactant | 0.1 |
By 70 ℃ of 20 minutes cleaning photoetching glue substrates of dipping in composition G.As viewed by photoelectric microscope, all photoresist and etch residues have been removed from substrate.Yet, observed the etching or the roughening of polysilicon under the same conditions.
Embodiment 7
Be prepared as follows composition H:
| Composition H | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 3.5 |
| Component | wt％ |
| 2-mercaptobenzimidazole | 0.01 |
| Water | 82.89 |
| 2,4,7,9-tetramethyl-5-decine-4,7-glycol | 0.1 |
As described in embodiment 5, the wafer of 70 ℃ of dipping polysilicon coatings after 15 minutes in composition H does not show observable etching or roughening.Yet composition H can not remove most photoresist duricrust from substrate.
Embodiment 8
Be prepared as follows composition I:
| Composition I | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 7.3 |
| 2-mercaptobenzimidazole | 0.2 |
| Water | 43.9 |
| Non-ion fluorin surfactant | 0.1 |
| Butylcarbitol | 5 |
| N, N-dimethyl diglycolamine | 15 |
| 1,8-diazabicyclo [5.4.0] undecylene | 15 |
The use of composition I has been removed photoresist in appropriateness protection polysilicon.Demonstrate some etching or roughening polysilicon flooded 15 minutes in sample after when 70 ℃.The copper etch-rate still remain on 0.15 /minute, and the etch-rate of tungsten be 0.67 /minute.Above-mentioned copper and tungsten sample are to flood 40 minutes at 70 ℃.
Embodiment 9
Be prepared as follows composition J:
| Composition J | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 7.3 |
| 2-mercaptobenzimidazole | 0.2 |
| Water | 49 |
| Five methyl diethylentriamine | 30 |
Composition J can remove photoresist and residue fully from the groove functional part, and can remove about 40% photoresist residue from the connection welding district.Above-mentioned groove functional part is by 1: 1 about 0.2 micron line/to forming, and the connection welding district is made up of the square array of about 2 microns square dummy functional parts.
Embodiment 10
Be prepared as follows composition K:
| Composition K | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 7.3 |
| 2-mercaptobenzimidazole | 0.2 |
| Water | 58.0 |
| Five methyl diethylentriamine | 20.0 |
| Boric acid | 1.0 |
70 ℃ dipping is after 20 minutes in composition K, and composition K produces some residual photoresist in the groove functional part, and washes 5% of connection welding district.
Embodiment 11
Be prepared as follows composition L:
| Composition L | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 7.3 |
| 2-mercaptobenzimidazole | 0.2 |
| Water | 49.0 |
| N-(3-aminopropyl)-morpholine | 30.0 |
70 ℃ of dippings are after 16 minutes, and composition L removes photoresist fully from the groove functional part, and removes the photoresist greater than 99.9% from the connection welding district.
Embodiment 12
Be prepared as follows composition M:
| Composition M | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 7.3 |
| 2-mercaptobenzimidazole | 0.2 |
| Water | 49.0 |
| N-hydroxyethyl morpholine | 30.0 |
70 ℃ of dippings are after 16 minutes, and composition L removes 10% photoresist from the groove functional part, do not remove photoresist from the connection welding district.
Embodiment 13
Be prepared as follows composition N:
| Composition N | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 13.5 |
| TMAH (25wt% solution) | 7.3 |
| 2-mercaptobenzimidazole | 0.08 |
| Water | 64.1 |
| N, N-dimethyl diglycolamine | 15.0 |
70 ℃ of dippings are after 20 minutes, and composition N removes the photoresist duricrust fully from the groove functional part, and removes 95% photoresist from the connection welding district.
Embodiment 14
Be prepared as follows composition O:
| Composition O | |
| Component | wt％ |
| N-methylmorpholine-N-oxide (50wt% solution) | 12.6 |
| TMAH (25wt% solution) | 11.7 |
| 2-mercaptobenzimidazole | 0.08 |
| Water | 75.3 |
| The polyglycol dinonyl phenyl ether | 0.3 |
The polyglycol dinonyl phenyl ether is the surfactant that contains 150 ethylene glycol repeat units of having an appointment.70 ℃ of dippings are after 20 minutes, and composition O removes the photoresist duricrust fully from the groove functional part, and removes photoresist fully from the connection welding district.
Comparative example 1
Comparative example 1 is by the 10wt% hydramine, and 10wt% water and 80wt% diglycolamine are formed.70 ℃ flooded the etching photoresist substrate respectively in composition 30,50 and 60 minutes, water flushing then.Inspection by photoelectric microscope shows comparative composition 1 dissolving photoresist below photoresist residue upper strata, but remaining photoresist residual layer is broken and is attached on the sample at Zone Full.
Claims (23)
1. cleaning solution comprises:
Polar solvent; With
When account for described solution be no more than about 3.5wt% the time, the pH that makes described solution is greater than about 11.5 alkali.
2. the cleaning solution of claim 1, wherein said polar solvent are one of in water, alcohol, ethylene glycol, acid amides, propylene glycol, carbonic ester and the glycol.
3. the cleaning solution of claim 1, wherein said alkali are the nitrogen-containing compounds that one of contains in hydrogen, alkyl and the substituted alkyl as side chain.
4. the cleaning solution of claim 1, wherein said polar solvent accounts for about 20% to about 95% of described solution weight.
5. the cleaning solution of claim 1, wherein said alkali are one of in ammonium hydroxide and the tetramethylammonium hydroxide.
6. the cleaning solution of claim 1, wherein said alkali accounts for about 0.1% to about 30% of described solution weight.
7. the cleaning solution of claim 1, it one of further comprises in oxygenant, cosolvent and the sequestrant.
8.pH the cleaning solution greater than about 11.5 comprises:
Polar solvent;
Alkali; With
One of in oxygenant, cosolvent, surfactant and the sequestrant.
9. the cleaning solution of claim 8, wherein said oxygenant accounts for about 1% to about 30% of described solution.
One of 10. the cleaning solution of claim 8, wherein said oxygenant is amine-N-oxide, perborate, in percarbonate and the superoxide.
11. the cleaning solution of claim 8, wherein said oxygenant are the nitrogen-containing compound that comprises one of hydrogen, methyl and pendent alkyl groups.
12. the cleaning solution of claim 8, it is the highest by about 50% that wherein said cosolvent accounts for described solution weight.
13. the cleaning solution of claim 8, wherein said cosolvent are one of in alkyl amine, alkanolamine and the glycol.
14. the cleaning solution of claim 8, the described solution weight of wherein said surfactant comprise is the highest by about 20%.
15. the cleaning solution of claim 8, wherein said surfactant are one of in fluoroalkyl, glycol, carboxylate, dodecylbenzene sulfonic acid, dodecyl benzene sulfonate, siloxane polymer, polypropylene salt polymkeric substance, acetylenic glycols, alkylammonium and the alkylammonium salt.
16. the cleaning solution of claim 8, it is the highest by about 10% that wherein said sequestrant accounts for described solution weight.
17. the cleaning solution of claim 8, wherein said sequestrant are one of in triazole, thiazole, tetrazolium, imidazoles, phosphate, mercaptan, azine, glycerine, amino acid, carboxylic acid, alcohol, acid amides and the quinoline.
18. device comprises:
The semiconductor chip that has the patterning groove on it; With
The metal wire that comprises in the groove cleans groove to comprise metal wire with solution, and the pH of solution is greater than about 11.5.
19. the device of claim 18, wherein solution one of comprises in polar solvent, oxygenant, cosolvent, surfactant and the sequestrant.
21. method comprises:
With the photoresist patterning on the semiconductor chip; With
Clean semiconductor chip with pH greater than about 11.5 cleaning solution.
22. the method for claim 20, wherein cleaning solution one of comprises in polar solvent, oxygenant, cosolvent, surfactant and the sequestrant.
23. the method for claim 20, wherein said cleaning comprises from semiconductor chip removes photoresist.
24. the method for claim 20 further comprises:
Behind described patterning, on semiconductor chip, form groove;
At described cleaning back plated metal line in groove; With
Semiconductor chip is carried out chemical-mechanical planarization.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43497102P | 2002-12-20 | 2002-12-20 | |
| US60/434,971 | 2002-12-20 | ||
| US10/389,214 | 2003-03-14 |
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| Publication Number | Publication Date |
|---|---|
| CN1739064A true CN1739064A (en) | 2006-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200380109011 Pending CN1739064A (en) | 2002-12-20 | 2003-12-17 | Photoresist removal |
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| CN103091903A (en) * | 2013-01-10 | 2013-05-08 | 京东方科技集团股份有限公司 | Preparation method, liquid crystal display (LCD) substrate and device for photolysis-type alignment film |
| CN103091903B (en) * | 2013-01-10 | 2015-05-27 | 京东方科技集团股份有限公司 | Preparation method, liquid crystal display (LCD) substrate and device for photolysis-type alignment film |
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