CN1711679A - 利用抑制三阶跨导改进rf晶体管放大器的线性度 - Google Patents
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Abstract
包括多个并联操作的晶体管的晶体管放大器的线性度通过减小晶体管产生的信号奇数阶跨导导数来改进。能够以组的形式提供晶体管,每组上施加不同的偏置电压,或每组晶体管上可以施加不同的输入信号。晶体管组具有不同的物理参数,如在场效应晶体管中的栅极的宽长比及晶体管的门限电压。
Description
发明背景
本发明通常涉及RF和微波晶体管放大器,并更具体地,本发明涉及改进这种功率放大器的线性度。
RF功率放大器典型地包括并联操作的多个晶体管单元。该晶体管包括硅横向扩散MOSFETS(LDMOSFET)或其它包括硅双极型、SIC MESFET以及如GAAS MESFET、InGaP HBT和GaN HEMT这样的III-V装置的半导体技术。
改进的线性度和操作是RF功率晶体管技术内的目标。不同的RF功率晶体管技术中的线性度的确定中具有多个共同的因素,包括随信号电平改变输入和阻抗、随信号电平改变电容和它们的导数、击穿和衬底导电效应、操作类型及随偏置和信号电平改变跨导和它的导数。
本发明涉及通过减少奇数阶跨导导数来改进线性度。
发明简述
根据本发明,通过使用多个晶体管和导数叠加(多个晶体管跨导导数的正负值相消)减少奇数阶跨导导数来改进RF功率晶体管的线性度。
在本发明的一个实施例中,多个晶体管(其中每个能够包括多个晶体管单元)由共用RF输入所驱动,但是具有不同的DC偏置电压。在另一实施例中,晶体管和晶体管单元具有不同的导电门限电压。这是通过例如在制作期间改变FET的沟道渗杂来得到的。在本发明的另一实施例中,在晶体管中改变RF输入的相位,同时改变或不改变到晶体管的DC偏置电压或门限电压。仍在另一实施例中,改变晶体管的沟道和栅极宽长比,更可取地是在相同的半导体管芯上形成不同栅极宽度的晶体管,从而减小对过程变化和组件公差的灵敏度。
抑制三阶和其它奇数阶跨导的优点是增加线性度或在固定线性度上增加效率,这导致制造利润的提高并使总的功率放大器的大小减小。参考附图,根据下面详细的描述和所附的权利要求,本发明和本发明的目的和特征将更显而易见。
附图简述
图1是常规的RF功率晶体管放大器的符号表示,该放大器可以包括具有共用DC偏置的共用RF输入驱动的多个晶体管。
图2是根据本发明的实施例包括三个晶体管的RF晶体管放大器的简图,每一个晶体管由共用RF输入驱动,但是具有不同的DC偏置电压。
图3是本发明的另一实施例的简图,其中三个功率晶体管由共用RF输入驱动,具有共用DC偏置但是具有不同的门限电平。
图5是本发明的另一实施例的简图,其中多个FET晶体管具有不同的栅极宽长比。
图6是分别具有常规的偏置和驱动和具有多栅极偏置的四个LDMOS FET的三阶互调功率的曲线图。
发明详述
跨导是测量输出电流中的改变的,是输入电压的函数。在场效应晶体管中,如LDMOS FET,增量的漏电流id能够表示为增量的栅极电压,Vg的函数,在静止的偏置点Id(Vg,0)周围,其中Id是大信号漏电流,如下面所述。
跨导导数的二阶导数或二次谐波不在输入信号频率的范围内,因而不存在问题。然而,三阶导数和较高的奇数导数频率上较接近于输入信号并且能够引起线性度问题。
根据本发明,通过在多个晶体管单元中相消正负值来减小奇数阶跨导导数的不利影响。这以若干方式来实现,如图2-5所示,而不是操作具有共用RF输入和共用DC偏置电压并且具有共用单元结构的所有晶体管单元,如图1中示意地说明,在图1中以10示出的所有晶体管单元由一个RF输入信号12来驱动,具有共用DC偏置电压14。
根据本发明的一个实施例,如图2所示,晶体管被编成三个组10-1、10-2和10-3,这三组的输入和输出与共用RF输入驱动12和共用输出16连接在一起。然而,每个组具有所标记的单独的DC偏置。例如,利用LDMOS晶体管单元,对于在4到5伏范围内的输入电压,偏置可以是如4.1、4.2和4.3伏。正如一般惯例,DC偏置电压可以和施加到晶体管的控制元件(例如栅极或基极)的RF输入驱动一起施加。
图3是本发明的另一实施例的简图,其中,三个晶体管组10-1、10-2和10-3具有相同的DC偏置电压和RF输入驱动,但是晶体管组的门限电压不同,通过改变晶体管单元的沟道渗杂来实现。例如,通过改变沟道渗杂,能够改变门限电压。此外,DC偏置电压能够与施加到晶体管控制元件(例如栅极或基极)的RF输入驱动相结合。
图4是本发明的另一实施例,其中,晶体管组10-1、10-2和10-3具有相同的DC偏置14并具有相同的RF输入12,但是通过改变输入线12-1、12-2和12-3的长度改变输入的相位。在输入相位中的不同产生多个晶体管的跨导导数的正负值的交错,并且在16上相加时,正负值趋向于相消。
图5是本发明的另一实施例简图,其中,晶体管组10-1、10-2和10-3具有不同的栅极宽长比。通过以10-20%改变宽长比,再次地改变多个晶体管组的跨导导数的正负值。
图6是说明四个LDMOS FET晶体管三阶导数功率(dBm或dBc)与功率输出(powerout)(dBm)的关系曲线图,以60示出的是当晶体管被常规驱动和偏置时的关系曲线,以62示出的是当晶体管被不同的偏置电压驱动(类似于图2三个晶体管的简图)时的关系曲线。在2.14GHz上驱动晶体管,整个输出功率70瓦。需要注意的是,在8到13dB的补偿功率范围内,三阶导数的功率从大约40dBm减小到60dBm,并因此增加功率放大器的线性度。
已经描述了多个晶体管放大器的若干实施例,构造、偏置或驱动多个晶体管放大器,使得奇数阶跨导导数的正负值趋向于相消,从而改进功率放大器操作的线性度。尽管根据特定的实施例已经描述了本发明,但是描述是说明本发明的并不用于限制本发明。对于本领域的技术人员在不偏离如所附权利要求所定义的本发明的实际精神和范围的前提下,不同的修改和应用可以存在。
Claims (19)
1、一种具有改进的线性度和操作的RF功率放大器,包括多个并联操作的晶体管,驱动电压和偏置电压施加到所述晶体管,由此来自所述多个晶体管的奇数跨导导数的正负值趋向于相消。
2、如权利要求1所定义的RF功率放大器,其中所述晶体管具有不同的偏置电压。
3、如权利要求1所定义的RF功率放大器,其中所述晶体管具有不同的输入信号。
4、如权利要求3所定义的RF功率放大器,其中到所述晶体管的输入信号的相位不同。
5、如权利要求4所定义的RF功率放大器,其中所述晶体管具有不同的偏置电压。
6、如权利要求4所定义的RF功率放大器,其中所述晶体管具有不同的输入电压。
7、如权利要求6所定义的RF功率放大器,其中所述晶体管具有不同的偏置电压。
8、如权利要求1所定义的RF功率放大器,其中从场效应晶体管和双极型晶体管组成的组中选择所述晶体管。
9、如权利要求8所定义的RF功率放大器,其中所述场效应晶体管和双极型晶体管包括硅和化合物半导体材料。
10、一种具有改进的线性度和操作的RF功率放大器,包括多个并联操作的晶体管,所述晶体管的物理参数不同,由此来自所述多个晶体管的奇数跨导导数的正负值趋向于相消。
11、如权利要求10所定义的RF功率放大器,其中所述晶体管包括具有栅极的场效应晶体管,所述晶体管栅极的宽长比不同。
12、如权利要求10所定义的RF功率放大器,其中所述晶体管包括场效应晶体管,所述晶体管的电压门限不同。
13、一种改进多晶体管功率放大器的操作线性度的方法,包括步骤:
a)提供与共用输出连接的多组晶体管,及
b)操作所述多组晶体管,由此输入信号的奇数阶跨导导数的正负值趋向于相消。
14、如权利要求13所定义的方法,其中步骤b)包括变更施加到所述多个组的输入信号。
15、如权利要求14所定义的方法,其中步骤b)包括提供施加到所述多个组的具有不同相位的输入信号。
16、如权利要求13所定义的方法,其中步骤b)包括施加不同的偏置电压到所述多个组。
17、如权利要求13所定义的方法,其中步骤a)包括提供具有不同物理参数的多组晶体管。
18、如权利要求17所定义的方法,其中所述晶体管是具有栅极的场效应晶体管,每组晶体管具有不同于其它组的栅极宽长比。
19、如权利要求18所定义的方法,其中所述晶体管是场效应晶体管,每组晶体管具有不同于其它组的门限值。
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Application Number | Priority Date | Filing Date | Title |
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US10/289,734 US6819184B2 (en) | 2002-11-06 | 2002-11-06 | RF transistor amplifier linearity using suppressed third order transconductance |
US10/289,734 | 2002-11-06 | ||
PCT/US2003/035415 WO2004045070A1 (en) | 2002-11-06 | 2003-11-04 | Improved rf transistor amplifier linearity using suppressed third order transconductance |
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CN1711679B CN1711679B (zh) | 2010-04-28 |
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EP (1) | EP1573908B1 (zh) |
JP (1) | JP4977320B2 (zh) |
KR (1) | KR101056889B1 (zh) |
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CN101656514B (zh) * | 2009-09-07 | 2011-09-28 | 东南大学 | 一种基于匹配共享增益可控的并联型射频功率放大器 |
CN106298766A (zh) * | 2015-05-27 | 2017-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种功率器件及优化功率器件的方法 |
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2003
- 2003-11-04 TW TW092130853A patent/TWI337450B/zh not_active IP Right Cessation
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- 2003-11-04 DE DE60332868T patent/DE60332868D1/de not_active Expired - Lifetime
- 2003-11-04 WO PCT/US2003/035415 patent/WO2004045070A1/en active Application Filing
- 2003-11-04 AU AU2003291339A patent/AU2003291339A1/en not_active Abandoned
- 2003-11-04 AT AT03768732T patent/ATE470264T1/de not_active IP Right Cessation
- 2003-11-04 CN CN2003801027105A patent/CN1711679B/zh not_active Expired - Lifetime
- 2003-11-04 JP JP2004551818A patent/JP4977320B2/ja not_active Expired - Lifetime
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CN101401299B (zh) * | 2006-03-09 | 2010-10-06 | 联发科技股份有限公司 | 用于偏置晶体管的装置及方法 |
CN101656514B (zh) * | 2009-09-07 | 2011-09-28 | 东南大学 | 一种基于匹配共享增益可控的并联型射频功率放大器 |
CN106298766A (zh) * | 2015-05-27 | 2017-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种功率器件及优化功率器件的方法 |
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US6819184B2 (en) | 2004-11-16 |
WO2004045070A1 (en) | 2004-05-27 |
US20040085132A1 (en) | 2004-05-06 |
JP2006506020A (ja) | 2006-02-16 |
JP4977320B2 (ja) | 2012-07-18 |
CN1711679B (zh) | 2010-04-28 |
KR101056889B1 (ko) | 2011-08-12 |
AU2003291339A1 (en) | 2004-06-03 |
KR20050084630A (ko) | 2005-08-26 |
TWI337450B (en) | 2011-02-11 |
DE60332868D1 (de) | 2010-07-15 |
EP1573908A1 (en) | 2005-09-14 |
EP1573908B1 (en) | 2010-06-02 |
ATE470264T1 (de) | 2010-06-15 |
CA2504979A1 (en) | 2004-05-27 |
CA2504979C (en) | 2011-10-18 |
TW200414671A (en) | 2004-08-01 |
EP1573908A4 (en) | 2006-01-11 |
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