CN1702532A - 薄膜晶体管、具有该晶体管的平板显示器及其制造方法 - Google Patents
薄膜晶体管、具有该晶体管的平板显示器及其制造方法 Download PDFInfo
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- CN1702532A CN1702532A CNA2005100738219A CN200510073821A CN1702532A CN 1702532 A CN1702532 A CN 1702532A CN A2005100738219 A CNA2005100738219 A CN A2005100738219A CN 200510073821 A CN200510073821 A CN 200510073821A CN 1702532 A CN1702532 A CN 1702532A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR38528/04 | 2004-05-28 | ||
KR1020040038528A KR100601374B1 (ko) | 2004-05-28 | 2004-05-28 | 박막 트랜지스터 및 그 제조방법과 박막 트랜지스터를포함하는 평판표시장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1702532A true CN1702532A (zh) | 2005-11-30 |
CN100481511C CN100481511C (zh) | 2009-04-22 |
Family
ID=35424191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100738219A Expired - Fee Related CN100481511C (zh) | 2004-05-28 | 2005-05-24 | 薄膜晶体管、具有该晶体管的平板显示器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7554118B2 (zh) |
JP (1) | JP5085010B2 (zh) |
KR (1) | KR100601374B1 (zh) |
CN (1) | CN100481511C (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101000923B (zh) * | 2006-01-10 | 2010-09-08 | 株式会社半导体能源研究所 | 显示器件及其制造方法 |
CN102694004A (zh) * | 2011-03-21 | 2012-09-26 | 三星移动显示器株式会社 | 有机发光显示装置 |
CN101924111B (zh) * | 2006-03-31 | 2013-03-06 | Nlt技术株式会社 | 半导体器件和制造半导体器件的方法 |
CN104282713A (zh) * | 2013-07-12 | 2015-01-14 | 三星显示有限公司 | 有机发光显示装置及其制造方法 |
CN105655353A (zh) * | 2016-01-21 | 2016-06-08 | 武汉华星光电技术有限公司 | Tft阵列基板结构及其制作方法 |
CN105720106A (zh) * | 2014-12-05 | 2016-06-29 | 昆山国显光电有限公司 | 晶体管及其制备方法、有机电致发光装置及其制备方法 |
CN106653797A (zh) * | 2015-10-30 | 2017-05-10 | 乐金显示有限公司 | 有机发光显示装置 |
CN108269944A (zh) * | 2016-12-30 | 2018-07-10 | 乐金显示有限公司 | 显示装置 |
CN109031742A (zh) * | 2018-07-26 | 2018-12-18 | 京东方科技集团股份有限公司 | 显示基板的制造方法、显示基板及显示装置 |
CN111312660A (zh) * | 2020-02-25 | 2020-06-19 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI306364B (en) * | 2006-12-29 | 2009-02-11 | Ind Tech Res Inst | Flexible display panel device |
KR100807562B1 (ko) * | 2007-01-10 | 2008-02-28 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 포함하는 평판표시장치 |
KR100989123B1 (ko) * | 2008-10-15 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조 방법 및 그를 이용한 유기전계발광표시장치 |
KR20110037220A (ko) * | 2009-10-06 | 2011-04-13 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치 |
KR101056229B1 (ko) | 2009-10-12 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치 |
JP5836680B2 (ja) | 2010-07-27 | 2015-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
KR20130006945A (ko) * | 2011-06-27 | 2013-01-18 | 삼성디스플레이 주식회사 | 평판 표시 장치 및 그 제조방법 |
US20130146875A1 (en) * | 2011-12-13 | 2013-06-13 | Universal Display Corporation | Split electrode for organic devices |
KR101903445B1 (ko) * | 2012-01-10 | 2018-10-05 | 삼성디스플레이 주식회사 | 반도체 장치 및 이의 제조 방법 |
KR102013317B1 (ko) * | 2012-12-05 | 2019-08-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102148478B1 (ko) * | 2013-12-24 | 2020-08-26 | 엘지디스플레이 주식회사 | 산화물 반도체를 적용한 박막 트랜지스터 어레이 기판 및 그 제조방법 |
KR102316103B1 (ko) * | 2014-12-02 | 2021-10-26 | 엘지디스플레이 주식회사 | 수소 공급 박막을 구비한 산화물 반도체를 포함하는 박막 트랜지스터 기판 |
CN105374882A (zh) * | 2015-12-21 | 2016-03-02 | 武汉华星光电技术有限公司 | 一种低温多晶硅薄膜晶体管及其制备方法 |
US11925078B2 (en) | 2018-09-21 | 2024-03-05 | Sharp Kabushiki Kaisha | Display device including frame region, and bending region around display region |
KR102635709B1 (ko) * | 2018-11-08 | 2024-02-15 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03185735A (ja) * | 1989-12-14 | 1991-08-13 | Canon Inc | 半導体装置の製造方法 |
JP2000323735A (ja) * | 1999-05-10 | 2000-11-24 | Mitsubishi Electric Corp | 光起電力装置の製造方法及び光起電力装置 |
JP3605823B2 (ja) * | 2001-08-03 | 2004-12-22 | 日本電気株式会社 | 薄膜トランジスタ・アレイ基板およびアクティブマトリックス型液晶表示装置 |
JP2003100629A (ja) * | 2001-09-19 | 2003-04-04 | Sharp Corp | 半導体装置及びその製造方法 |
JP3845566B2 (ja) * | 2001-10-03 | 2006-11-15 | セイコーエプソン株式会社 | 薄膜半導体装置及びその製造方法並びに当該装置を備える電子デバイス |
KR100894651B1 (ko) * | 2002-07-08 | 2009-04-24 | 엘지디스플레이 주식회사 | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 |
KR20040032401A (ko) | 2002-10-09 | 2004-04-17 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 및 그 제조방법 |
JP4245915B2 (ja) * | 2002-12-24 | 2009-04-02 | シャープ株式会社 | 薄膜トランジスタの製造方法及び表示デバイスの製造方法 |
TW573364B (en) | 2003-01-07 | 2004-01-21 | Au Optronics Corp | Buffer layer capable of increasing electron mobility and thin film transistor having the buffer layer |
JP4547857B2 (ja) * | 2003-01-08 | 2010-09-22 | セイコーエプソン株式会社 | トランジスタの製造方法 |
-
2004
- 2004-05-28 KR KR1020040038528A patent/KR100601374B1/ko not_active IP Right Cessation
-
2005
- 2005-03-10 JP JP2005068158A patent/JP5085010B2/ja not_active Expired - Fee Related
- 2005-05-09 US US11/124,124 patent/US7554118B2/en active Active
- 2005-05-24 CN CNB2005100738219A patent/CN100481511C/zh not_active Expired - Fee Related
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101901826B (zh) * | 2006-01-10 | 2015-12-16 | 株式会社半导体能源研究所 | 显示器件 |
CN101000923B (zh) * | 2006-01-10 | 2010-09-08 | 株式会社半导体能源研究所 | 显示器件及其制造方法 |
CN101924111B (zh) * | 2006-03-31 | 2013-03-06 | Nlt技术株式会社 | 半导体器件和制造半导体器件的方法 |
CN102694004A (zh) * | 2011-03-21 | 2012-09-26 | 三星移动显示器株式会社 | 有机发光显示装置 |
CN102694004B (zh) * | 2011-03-21 | 2016-04-13 | 三星显示有限公司 | 有机发光显示装置 |
US9577020B2 (en) | 2011-03-21 | 2017-02-21 | Samsung Display Co., Ltd. | Organic light-emitting display device |
CN104282713A (zh) * | 2013-07-12 | 2015-01-14 | 三星显示有限公司 | 有机发光显示装置及其制造方法 |
US10903448B2 (en) | 2013-07-12 | 2021-01-26 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
US10622586B2 (en) | 2013-07-12 | 2020-04-14 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
CN104282713B (zh) * | 2013-07-12 | 2019-06-14 | 三星显示有限公司 | 有机发光显示装置及其制造方法 |
CN105720106B (zh) * | 2014-12-05 | 2019-04-26 | 昆山国显光电有限公司 | 晶体管及其制备方法、有机电致发光装置及其制备方法 |
CN105720106A (zh) * | 2014-12-05 | 2016-06-29 | 昆山国显光电有限公司 | 晶体管及其制备方法、有机电致发光装置及其制备方法 |
CN106653797B (zh) * | 2015-10-30 | 2019-11-15 | 乐金显示有限公司 | 有机发光显示装置 |
CN106653797A (zh) * | 2015-10-30 | 2017-05-10 | 乐金显示有限公司 | 有机发光显示装置 |
WO2017124686A1 (zh) * | 2016-01-21 | 2017-07-27 | 武汉华星光电技术有限公司 | Tft阵列基板结构及其制作方法 |
CN105655353A (zh) * | 2016-01-21 | 2016-06-08 | 武汉华星光电技术有限公司 | Tft阵列基板结构及其制作方法 |
CN108269944A (zh) * | 2016-12-30 | 2018-07-10 | 乐金显示有限公司 | 显示装置 |
US10741615B2 (en) | 2016-12-30 | 2020-08-11 | Lg Display Co., Ltd. | Display device |
CN109031742A (zh) * | 2018-07-26 | 2018-12-18 | 京东方科技集团股份有限公司 | 显示基板的制造方法、显示基板及显示装置 |
CN109031742B (zh) * | 2018-07-26 | 2021-01-22 | 京东方科技集团股份有限公司 | 显示基板的制造方法、显示基板及显示装置 |
CN111312660A (zh) * | 2020-02-25 | 2020-06-19 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
CN111312660B (zh) * | 2020-02-25 | 2022-08-09 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
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JP5085010B2 (ja) | 2012-11-28 |
JP2005340775A (ja) | 2005-12-08 |
US7554118B2 (en) | 2009-06-30 |
US20050263761A1 (en) | 2005-12-01 |
KR20050113040A (ko) | 2005-12-01 |
CN100481511C (zh) | 2009-04-22 |
KR100601374B1 (ko) | 2006-07-13 |
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