CN1700421A - 一种纳米线宽多晶硅栅刻蚀掩膜图形的形成方法 - Google Patents
一种纳米线宽多晶硅栅刻蚀掩膜图形的形成方法 Download PDFInfo
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- CN1700421A CN1700421A CN 200410047532 CN200410047532A CN1700421A CN 1700421 A CN1700421 A CN 1700421A CN 200410047532 CN200410047532 CN 200410047532 CN 200410047532 A CN200410047532 A CN 200410047532A CN 1700421 A CN1700421 A CN 1700421A
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CNB2004100475327A CN100342497C (zh) | 2004-05-21 | 2004-05-21 | 一种纳米线宽多晶硅栅刻蚀掩膜图形的形成方法 |
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CNB2004100475327A CN100342497C (zh) | 2004-05-21 | 2004-05-21 | 一种纳米线宽多晶硅栅刻蚀掩膜图形的形成方法 |
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CN1700421A true CN1700421A (zh) | 2005-11-23 |
CN100342497C CN100342497C (zh) | 2007-10-10 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100408970C (zh) * | 2006-06-30 | 2008-08-06 | 西安交通大学 | 一种纳米多台阶高度样板的制备方法 |
CN101197262B (zh) * | 2006-12-04 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 栅极的制造方法 |
CN101572290B (zh) * | 2009-06-02 | 2010-09-08 | 中国科学院上海微***与信息技术研究所 | 柱状纳米加热电极的制备方法 |
CN101554991B (zh) * | 2009-05-11 | 2012-01-18 | 北京大学 | 一种多样性纳米结构的加工方法 |
CN102543713A (zh) * | 2012-02-28 | 2012-07-04 | 上海华力微电子有限公司 | 一种氧化硅栅极补偿隔离区刻蚀的方法 |
CN102618936A (zh) * | 2012-03-21 | 2012-08-01 | 北京通美晶体技术有限公司 | 砷化镓表面化学腐蚀方法和化学腐蚀液 |
CN101767772B (zh) * | 2010-01-29 | 2012-10-03 | 北京大学 | 一种在硅材料中形成纳米间隙的方法 |
CN107526190A (zh) * | 2016-06-22 | 2017-12-29 | 信利(惠州)智能显示有限公司 | 一种ltps的制备工艺 |
CN110581170A (zh) * | 2019-08-13 | 2019-12-17 | 中山市华南理工大学现代产业技术研究院 | 具有Г型栅的GaN基MIS-HEMT器件及制备方法 |
CN112436038A (zh) * | 2020-11-23 | 2021-03-02 | 安徽熙泰智能科技有限公司 | 一种硅基Micro OLED微显示器件新型像素定义层及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001054184A1 (en) * | 2000-01-19 | 2001-07-26 | Philips Semiconductors, Inc. | Method for removing residues with reduced etching of oxide |
CN1191391C (zh) * | 2000-12-19 | 2005-03-02 | 中国科学院微电子中心 | 70纳米多晶硅栅刻蚀-氟化+反应离子刻蚀方法 |
US6534418B1 (en) * | 2001-04-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Use of silicon containing imaging layer to define sub-resolution gate structures |
US6828205B2 (en) * | 2002-02-07 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd | Method using wet etching to trim a critical dimension |
-
2004
- 2004-05-21 CN CNB2004100475327A patent/CN100342497C/zh not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100408970C (zh) * | 2006-06-30 | 2008-08-06 | 西安交通大学 | 一种纳米多台阶高度样板的制备方法 |
CN101197262B (zh) * | 2006-12-04 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 栅极的制造方法 |
CN101554991B (zh) * | 2009-05-11 | 2012-01-18 | 北京大学 | 一种多样性纳米结构的加工方法 |
CN101572290B (zh) * | 2009-06-02 | 2010-09-08 | 中国科学院上海微***与信息技术研究所 | 柱状纳米加热电极的制备方法 |
CN101767772B (zh) * | 2010-01-29 | 2012-10-03 | 北京大学 | 一种在硅材料中形成纳米间隙的方法 |
CN102543713A (zh) * | 2012-02-28 | 2012-07-04 | 上海华力微电子有限公司 | 一种氧化硅栅极补偿隔离区刻蚀的方法 |
CN102543713B (zh) * | 2012-02-28 | 2014-05-28 | 上海华力微电子有限公司 | 一种氧化硅栅极补偿隔离区刻蚀的方法 |
CN102618936A (zh) * | 2012-03-21 | 2012-08-01 | 北京通美晶体技术有限公司 | 砷化镓表面化学腐蚀方法和化学腐蚀液 |
CN102618936B (zh) * | 2012-03-21 | 2015-01-14 | 北京通美晶体技术有限公司 | 砷化镓表面化学腐蚀方法和化学腐蚀液 |
CN107526190A (zh) * | 2016-06-22 | 2017-12-29 | 信利(惠州)智能显示有限公司 | 一种ltps的制备工艺 |
CN110581170A (zh) * | 2019-08-13 | 2019-12-17 | 中山市华南理工大学现代产业技术研究院 | 具有Г型栅的GaN基MIS-HEMT器件及制备方法 |
WO2021027242A1 (zh) * | 2019-08-13 | 2021-02-18 | 中山市华南理工大学现代产业技术研究院 | 具有Г型栅的 GaN 基 MIS-HEMT 器件及制备方法 |
CN112436038A (zh) * | 2020-11-23 | 2021-03-02 | 安徽熙泰智能科技有限公司 | 一种硅基Micro OLED微显示器件新型像素定义层及其制备方法 |
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CN100342497C (zh) | 2007-10-10 |
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