CN1694219A - Panel field emission display of double-grid structure and manufacturing technology thereof - Google Patents
Panel field emission display of double-grid structure and manufacturing technology thereof Download PDFInfo
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- CN1694219A CN1694219A CNA2005100176103A CN200510017610A CN1694219A CN 1694219 A CN1694219 A CN 1694219A CN A2005100176103 A CNA2005100176103 A CN A2005100176103A CN 200510017610 A CN200510017610 A CN 200510017610A CN 1694219 A CN1694219 A CN 1694219A
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Abstract
The invention relates to the panel field emission display with double electronics grid structure and its manufacture technology, the plane display includes vacuum cavity composed of the negative pole panel, the anode panel and around glass frame has the tin indium oxide compound thin film layer on the anode panel and luminous powder layer on the tin indium oxide compound thin film layer, the carbon nanometer tube negative pole on the negative pole layer which controls the carbon nanometer negative pole electron emission, the insulation isolation strut wall which locates in the vacuum cavity, the characteristic is manufacture of the double electronics grid structure, which controls the electron emission of the carbon nanometer tube negative pole, and the structure is simple, low cost simple manufacture technology manufacture process is stable and reliable.
Description
Technical field
The invention belongs to the mutual interleaving techniques field of plane Display Technique, vacuum science and technology and nanometer science and technology, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the flat-panel monitor of carbon nanotube cathod, particularly a kind of panel field emission display and manufacture craft thereof that has the double-grid structure of double-gate structure, carbon nanotube cathod.
Background technology
Carbon nano-tube has unique geometrical property and physical property, has little tip curvature radius, and high mechanical strength can be launched a large amount of electronics under the voltage effect.And for the field-emission plane display that utilizes carbon nano-tube as cold-cathode material, need farthest reduce production costs, reduce the operating voltage of device, so that combine with conventional integrated circuit.
In the middle of dull and stereotyped carbon nano-tube film display screen, grid structure is an indispensable part in the device fabrication processes, and its control characteristic also is one of important performance indexes of weighing flat device.Aspect the grid that utilizes the special isolation material, not only comprise quite complicated manufacture craft, and containing the development and use that new technology is arranged, cause the cost of manufacture of total device very high; For the carbon nano-tube display screen, realize technology element manufacturing simple, reliable and stable, with low cost, also be the precondition that actual product is used.The main selection principle of grid material is: must be applied in the middle of the vacuum environment, and gas output is little under vacuum environment; Must have certain electrical insulation grade, so that control grid part and carbon nanotube cathod part electrical insulation fully mutually under high voltage; Require the base material of control grid and the thermal coefficient of expansion of cathode substrate material to be close, avoid in the process of high temperature sintering encapsulation, bursting phenomenon, or the like.Although each control grid manufacturing materials of making enterprise or research institution's use has nothing in common with each other, but all used special-purpose special facture material mostly, also used simultaneously special manufacture craft, for the material requirements of device than higher, make easily that in the manufacturing process of device carbon nanotube cathod is subjected to certain damage and pollution, this is its disadvantage.In addition,, need reduce the total device cost as much as possible, carry out element manufacturing reliable and stable, with low cost guaranteeing that grid structure has the carbon nanometer tube negative electrode under the prerequisite of good control action.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art and provide a kind of have double-grid structure, simple in structure, manufacturing process is reliable and stable, with low cost, the panel field emission display and the manufacture craft thereof that are made into the high double-grid structure of power.
The object of the present invention is achieved like this:
The panel field emission display of double-grid structure of the present invention, comprise by negative electrode panel, anode plate and all around glass enclose sealed vacuum chamber that frame constitutes, at phosphor powder layer, the carbon nanotube cathod that on the negative electrode panel, is provided with on tin indium oxide thin layer of the tin indium oxide thin layer that photoetching is arranged on the anode plate and preparation, be positioned at the inner passive insulation of vacuum chamber and isolate knee wall, above carbon nanotube cathod, be provided with the double-grid structure of the electronics emission of controlling carbon nanotube negative electrode.
Described double-grid structure comprise with glass be backing material the negative electrode panel, be arranged on negative electrode bus and insulating barrier on the negative electrode panel, be provided with grid bus down at insulating barrier, the grid bus is provided with insulating barrier, insulating barrier is provided with the grid bus, and last grid bus is provided with the grid cover layer.Described double-grid structure fixed form is for one of fixedly mounting separately and be fixed on the negative electrode panel, its position between anode plate and negative electrode panel, and the backing material of double-grid structure is a glass, one of soda-lime glass and Pyrex.Bus in the described double-grid structure is divided into two parts, promptly go up grid part and following grid part, the distance that wherein goes up between grid part and the carbon nanotube cathod is relatively big, and the distance between following grid part and the carbon nanotube cathod compares less, the insulating material of going up between grid and the following grid in the double-grid structure is a polyimide layer, thin glass, micarex, one of potsherd and mica sheet material, the trend of the last grid part bus in the double-grid structure is vertical mutually with the trend of following grid part bus, keeps apart mutually between following grid in the double-grid structure and the carbon nanotube cathod.Electrode in the described double-grid structure is to adopt bus to make, bus is that tin indium oxide conducting film, silver slurry make, adopt copper steam-plating, aluminium, nickel, gold, silver conducting metal one of to make, have in the double-grid structure and be used for the electron channel hole that electronics passes through, the intersect electron channel hole of position of upper gate and bottom grid that is in the double-grid structure is interconnected, and there is an insulating cover in the surface of last grid.
Double-grid structure among the present invention adopts following technology to make:
1) preparation of backing material glass:
The bulk substrate material glass is carried out scribing; Backing material glass is as the negative electrode panel;
2) making of negative electrode bus:
At backing material evaporation last layer on glass tin indium oxide layer; Tin indium oxide layer to evaporation carries out photoetching, forms the negative electrode bus;
3) making of the insulating barrier between grid and the negative electrode bus down:
Go out polyimide layer by the spin coated prepared in that backing material is on glass, curing temperature is 375 ℃, forms the insulating barrier between the grid and negative electrode bus down.Polyimide layer to preparation carries out etching, and cathode zone is etched away, and forms the carbon nanotube cathod hole.
4) making of grid bus down:
Producing aluminum membranous layer above the insulating barrier between grid and the negative electrode bus down, utilizing conventional photoetching process again, the aluminum membranous layer photoetching formation down grid bus of preparation.
5) making of the insulating barrier between the grid up and down:
Go out polyimide layer by the spin coated prepared once more in that backing material is on glass, curing temperature is 375 ℃, require to cover down fully the grid bus, form the insulating barrier between the grid up and down, polyimide layer to preparation carries out photoetching, cathode zone is etched away, form the carbon nanotube cathod hole.
6) the upward making of grid bus:
Producing aluminum membranous layer above the insulating barrier between the grid up and down, utilizing conventional photoetching process again, the aluminum membranous layer photoetching for preparing is being formed the grid bus.The trend of the trend of grid bus and following grid bus is orthogonal in the requirement.
7) go up the tectal making of grid:
Go out polyimide layer by the spin coated prepared once more in that backing material is on glass, curing temperature is 375 ℃, requires to cover the grid bus fully, grid cover layer in the formation.Polyimide layer to preparation carries out photoetching, and cathode zone is etched away, and forms the carbon nanotube cathod hole.
8) processing of glass surface:
Whole glass is carried out clean, remove impurity.
The carbon nanotube cathod panel field emission display that has double-grid structure among the present invention is made according to following technology:
1, the making of minus plate:
1) printing of carbon nanotube cathod:
In conjunction with silk-screen printing technique, on carbon nano-tube printed carbon nanotube negative electrode bus.
2) reprocessing of carbon nanotube cathod
Carbon nanotube cathod after the printing is carried out reprocessing, to improve the field emission characteristic of carbon nano-tube.
2, the making of anode plate:
1) cleaning plate glass is removed surface impurity;
2) evaporation one deck tin indium oxide film on plate glass;
3) tin indium oxide film is carried out photoetching, form the anode conducting bar;
4) in conjunction with silk-screen printing technique, the non-display area printing insulation paste layer at bus is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
5) in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer on bus; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
3, device assembling:
Negative electrode panel, anode plate, insulation are isolated knee wall and glass enclose frame and be assembled together, and getter is put in the middle of the vacuum chamber, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
5, finished product is made:
The device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
Control grid in the double-grid structure among the present invention is positioned at the top of carbon nanotube cathod, is used for the electronics emission of controlling carbon nanotube negative electrode.When applying appropriate voltage on the control grid when, carbon nanotube cathod will be launched a large amount of electronics.In double-grid structure of the present invention, can adopt the mutual square crossing mode of grid and following grid to carry out the mode of the matrix addressing of display device pixel, so just greatly reduced requirement to carbon nanotube cathod preparation technology, bigger selection has been arranged on the preparation method of carbon nanotube cathod, both can adopt carbon nano-tube that silk screen print method transplants as cathode material, and also can adopt directly on the large tracts of land substrate carbon nanotubes grown as cathode material; Certainly, also can adopt down the mutual square crossing mode of grid and carbon nanotube cathod to carry out the mode of the matrix addressing of display device pixel, last grid further reduces working voltage of device as the slave part of device.From device demonstration aspect bigger choice has been arranged.In the manufacturing process of double-grid structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplified the manufacturing process of integral display spare, can carry out large-area element manufacturing, help carrying out business-like big production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of double-grid structure.
Fig. 2 has provided the schematic top plan view of the following grid in the double-grid structure.
Fig. 3 has provided the schematic top plan view of the last grid in the double-grid structure.
Fig. 4 has provided the overall schematic top plan view in the double-grid structure.
Fig. 5 has provided the structural representation of the embodiment of a field emission flat-panel screens that has a double-grid structure.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Shown in Fig. 1,2,3,4,5, the panel field emission display of double-grid structure of the present invention comprise by negative electrode panel 1, anode plate 9 and all around glass enclose sealed vacuum chamber that frame 14 constitutes, at phosphor powder layer 12, the carbon nanotube cathod 8 that on negative electrode panel 1, is provided with on tin indium oxide thin layer of the tin indium oxide thin layer 10 that photoetching is arranged on the anode plate 9 and preparation, be positioned at the inner passive insulation of vacuum chamber and isolate knee wall 13, above carbon nanotube cathod 8, be provided with the double-grid structure of the electronics emission of controlling carbon nanotube negative electrode.Make double-grid structure, be used for the electronics emission of controlling carbon nanotube negative electrode, greatly reduced requirement, reduced the production cost of integral device, simplify integral device manufacture craft and manufacturing process dielectric isolation layer material between the two.
Described double-grid structure comprise with glass be backing material negative electrode panel 1, be arranged on negative electrode bus 2 and insulating barrier 3 on the negative electrode panel 1, insulating barrier 3 is provided with down grid bus 4, grid bus 4 is provided with insulating barrier 5, insulating barrier 5 is provided with grid bus 6, and last grid bus 6 is provided with grid cover layer 7.
Described double-grid structure fixed form is for one of fixedly mounting separately and be fixed on the negative electrode panel, its position between anode plate and negative electrode panel, and the backing material of double-grid structure is a glass, one of soda-lime glass and Pyrex.Bus in the described double-grid structure is divided into two parts, promptly go up grid part and following grid part, the distance that wherein goes up between grid part and the carbon nanotube cathod is relatively big, and the distance between following grid part and the carbon nanotube cathod compares less, the insulating material of going up between grid and the following grid in the double-grid structure is a polyimide layer, thin glass, micarex, one of potsherd and mica sheet material, the trend of the last grid part bus in the double-grid structure is vertical mutually with the trend of following grid part bus, keeps apart mutually between following grid in the double-grid structure and the carbon nanotube cathod.Electrode in the described double-grid structure is to adopt bus to make, bus is that tin indium oxide conducting film, silver slurry make, adopt copper steam-plating, aluminium, nickel, gold, silver conducting metal one of to make, have in the double-grid structure and be used for the electron channel hole that electronics passes through, the intersect electron channel hole of position of upper gate and bottom grid that is in the double-grid structure is interconnected, and there is an insulating cover in the surface of last grid.
Double-grid structure among the present invention adopts following technology to make:
1) preparation of backing material glass 1:
The bulk substrate material glass is carried out scribing; Backing material glass is as the negative electrode panel;
2) making of negative electrode bus 2:
Evaporation last layer tin indium oxide layer on backing material glass 1; Tin indium oxide layer to evaporation carries out photoetching, forms negative electrode bus 2;
3) making of the insulating barrier 3 between grid and the negative electrode bus down:
Go out polyimide layer by the spin coated prepared on backing material glass 1, curing temperature is 375 ℃, the insulating barrier 3 under forming between grid and the negative electrode bus.Polyimide layer to preparation carries out etching, and cathode zone is etched away, and forms the carbon nanotube cathod hole.
4) making of grid bus 4 down:
Producing aluminum membranous layer above the insulating barrier 3 between grid and the negative electrode bus down, utilizing conventional photoetching process again, the aluminum membranous layer photoetching formation down grid bus 4 of preparation.
5) making of the insulating barrier between the grid 5 up and down:
Go out polyimide layer by the spin coated prepared once more on backing material glass 1, curing temperature is 375 ℃, requires to cover down fully grid bus 4, forms the insulating barrier 5 between the grid up and down.Polyimide layer to preparation carries out photoetching, and cathode zone is etched away, and forms the carbon nanotube cathod hole.
6) the upward making of grid bus 6:
Producing aluminum membranous layer above the insulating barrier 5 between the grid up and down, utilizing conventional photoetching process again, the aluminum membranous layer photoetching for preparing is being formed grid bus 6.The trend of the trend of grid bus and following grid bus is orthogonal in the requirement.
7) the upward making of grid cover layer 7:
Go out polyimide layer by the spin coated prepared once more on backing material glass 1, curing temperature is 375 ℃, requires to cover grid bus 6 fully, grid cover layer 7 in the formation.Polyimide layer to preparation carries out photoetching, and cathode zone is etched away, and forms the carbon nanotube cathod hole.
8) processing of glass surface:
Whole glass is carried out clean, remove impurity.
The carbon nanotube cathod panel field emission display that has double-grid structure among the present invention is made according to following technology:
1, the making of minus plate:
1) printing of carbon nanotube cathod 8:
In conjunction with silk-screen printing technique, on carbon nano-tube 8 printed carbon nanotube negative electrode buss.
2) reprocessing of carbon nano-tube 8 negative electrodes
Carbon nano-tube 8 negative electrodes after the printing are carried out reprocessing, to improve the field emission characteristic of carbon nano-tube.
2, the making of anode plate:
1) cleaning plate glass 9, remove surface impurity;
2) evaporation one deck tin indium oxide film on plate glass 9;
3) tin indium oxide film is carried out photoetching, form anode conducting bar 10;
4),, be used to prevent the parasitic electrons emission 11 layers of the non-display area of bus printing insulation pastes in conjunction with silk-screen printing technique; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
5) in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer 12 on bus; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
3, device assembling
Negative electrode panel, anode plate, insulation are isolated knee wall 13 and glass enclose frame 14 and be assembled together, and getter is put in the middle of the vacuum chamber, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
5, finished product is made
The device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Double-grid structure among the present invention is positioned at the top of carbon nanotube cathod, is used for the electronics emission of controlling carbon nanotube negative electrode; Double-grid structure among the present invention both can fixedly mount separately, also can be fixed on the negative electrode panel; The position of double-grid structure among the present invention between anode plate and negative electrode panel; Bus in the double-grid structure among the present invention is divided into two parts, promptly go up grid part and following grid part, the distance that wherein goes up between grid part and the carbon nanotube cathod is relatively big, and the distance between following grid part and the carbon nanotube cathod compares less; The base material of the double-grid structure among the present invention be large-scale, have quite good thermal endurance and an operability, that can independently make, with low cost High Performance Insulation material; The base material of the double-grid structure among the present invention is a glass, as soda-lime glass, and Pyrex; The insulating material of going up between grid and the following grid in the double-grid structure among the present invention can be polyimide layer, thin glass, micarex, potsherd and mica sheet material; Polyimide layer among the present invention is finished in conjunction with spin coated technology and reactive ion etching method; Electrode in the double-grid structure among the present invention adopts bus to make; Bus in the double-grid structure among the present invention can be tin indium oxide conducting film, can adopt the silver slurry to make, and also can adopt copper steam-plating, aluminium, nickel, gold, silver conducting metal to make; Bus in the double-grid structure among the present invention is finished in conjunction with photoetching process; The trend of the last grid part bus in the double-grid structure among the present invention and the trend of following grid part bus are orthogonal; Keep apart mutually between following grid in the double-grid structure among the present invention and the carbon nanotube cathod; Have in the double-grid structure of the present invention and be used for the electron channel hole that electronics passes through; The intersect electron channel hole of position of upper gate and bottom grid that is in the double-grid structure among the present invention is interconnected; There is an insulating cover in the surface of the last grid among the present invention; Under the prerequisite that does not influence the device display resolution, can install and fix insulation on the double-grid structure among the present invention and isolate the knee wall element.
Claims (6)
1, a kind of panel field emission display of double-grid structure, comprise by negative electrode panel (1), anode plate (9) and all around glass enclose the sealed vacuum chamber that frame (14) constitutes, the phosphor powder layer (12) on tin indium oxide thin layer at tin indium oxide thin layer (10) that photoetching is arranged on the anode plate (9) and preparation, go up the carbon nanotube cathod (8) that is provided with at negative electrode panel (1), be positioned at the inner passive insulation of vacuum chamber and isolate knee wall (13), it is characterized in that: the double-grid structure that is provided with the electronics emission of controlling carbon nanotube negative electrode in carbon nanotube cathod (8) top.
2, the panel field emission display of a kind of double-grid structure according to claim 1, it is characterized in that: described double-grid structure comprise with glass be backing material negative electrode panel (1), be arranged on negative electrode bus (2) and insulating barrier (3) on the negative electrode panel (1), insulating barrier (3) is provided with down grid bus (4), grid bus (4) is provided with insulating barrier (5), insulating barrier (5) is provided with grid bus (6), and last grid bus (6) is provided with grid cover layer (7).
3, the panel field emission display of a kind of double-grid structure according to claim 1, it is characterized in that: described double-grid structure fixed form is for one of fixedly mounting separately and be fixed on the negative electrode panel, its position between anode plate and negative electrode panel, the backing material of double-grid structure is a glass, one of soda-lime glass and Pyrex.
4, the panel field emission display of a kind of double-grid structure according to claim 1, it is characterized in that: the bus in the described double-grid structure is divided into two parts, promptly go up grid part and following grid part, the distance that wherein goes up between grid part and the carbon nanotube cathod is relatively big, and the distance between following grid part and the carbon nanotube cathod compares less, the insulating material of going up between grid and the following grid in the double-grid structure is a polyimide layer, thin glass, micarex, one of potsherd and mica sheet material, the trend of the last grid part bus in the double-grid structure is vertical mutually with the trend of following grid part bus, keeps apart mutually between following grid in the double-grid structure and the carbon nanotube cathod.
5, the panel field emission display of a kind of double-grid structure according to claim 1, it is characterized in that: the electrode in the described double-grid structure is to adopt bus to make, bus is that tin indium oxide conducting film, silver slurry make, adopt copper steam-plating, aluminium, nickel, gold, silver conducting metal one of to make, have in the double-grid structure and be used for the electron channel hole that electronics passes through, the intersect electron channel hole of position of upper gate and bottom grid that is in the double-grid structure is interconnected, and there is an insulating cover in the surface of last grid.
6, a kind of manufacture craft of panel field emission display of double-grid structure is characterized in that:
Double-grid structure adopts following technology to make:
1) preparation of backing material glass (1):
The bulk substrate material glass is carried out scribing; Backing material glass is as the negative electrode panel;
2) making of negative electrode bus (2):
Go up evaporation last layer tin indium oxide layer at backing material glass (1); Tin indium oxide layer to evaporation carries out photoetching, forms negative electrode bus (2);
3) making of the insulating barrier (3) between grid and the negative electrode bus down:
Upward go out polyimide layer at backing material glass (1) by the spin coated prepared, curing temperature is 375 ℃, and the insulating barrier (3) under forming between grid and the negative electrode bus carries out etching to the polyimide layer for preparing, cathode zone is etched away, form the carbon nanotube cathod hole;
4) making of grid bus (4) down:
Produce aluminum membranous layer above the insulating barrier (3) between grid and the negative electrode bus down, utilizing conventional photoetching process again, with the aluminum membranous layer photoetching formation down grid bus (4) of preparation,
5) making of the insulating barrier between the grid (5) up and down:
On backing material glass (1), go out polyimide layer by the spin coated prepared once more, curing temperature is 375 ℃, require to cover down fully grid bus (4), form the insulating barrier (5) between the grid up and down, polyimide layer to preparation carries out photoetching, cathode zone is etched away, form the carbon nanotube cathod hole
6) the upward making of grid bus (6):
Producing aluminum membranous layer above the insulating barrier (5) between the grid up and down, utilize conventional photoetching process again, the aluminum membranous layer photoetching of preparation is formed grid bus (6), and the trend of the trend of grid bus and following grid bus is orthogonal in the requirement
7) the upward making of grid cover layer (7):
On backing material glass (1), go out polyimide layer by the spin coated prepared once more, curing temperature is 375 ℃, require to cover fully grid bus (6), grid cover layer (7) in the formation, polyimide layer to preparation carries out photoetching, cathode zone is etched away, form the carbon nanotube cathod hole
8) processing of glass surface:
Whole glass is carried out clean, removes impurity,
The carbon nanotube cathod panel field emission display that has double-grid structure is made according to following technology:
The making of minus plate:
1) printing of carbon nanotube cathod (8):
In conjunction with silk-screen printing technique, on carbon nano-tube (8) printed carbon nanotube negative electrode bus,
2) reprocessing of carbon nano-tube (8) negative electrode:
Carbon nano-tube (8) negative electrode after the printing is carried out reprocessing, improving the field emission characteristic of carbon nano-tube,
The making of anode plate:
1) cleaning plate glass (9) is removed surface impurity;
2) go up evaporation one deck tin indium oxide film at plate glass (9);
3) tin indium oxide film is carried out photoetching, forms anode conducting bar (10),
4) in conjunction with silk-screen printing technique, non-display area printing insulation paste (11) layer at bus is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes,
5) in conjunction with silk-screen printing technique, the viewing area printing phosphor powder layer (12) on bus, toast baking temperature in the middle of baking oven: 120 ℃, the retention time: 10 minutes,
The device assembling:
Negative electrode panel, anode plate, insulation are isolated knee wall (13) and glass enclose frame (14) and be assembled together, and getter is put in the middle of the vacuum chamber, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
Finished product is made:
The device that has assembled is carried out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100176103A CN100375217C (en) | 2005-05-24 | 2005-05-24 | Panel field emission display of double-grid structure and manufacturing technology thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100176103A CN100375217C (en) | 2005-05-24 | 2005-05-24 | Panel field emission display of double-grid structure and manufacturing technology thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1694219A true CN1694219A (en) | 2005-11-09 |
| CN100375217C CN100375217C (en) | 2008-03-12 |
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| CN1287413C (en) * | 2003-03-26 | 2006-11-29 | 清华大学 | Field transmitting display |
| KR100862655B1 (en) * | 2003-08-12 | 2008-10-10 | 삼성에스디아이 주식회사 | Field emission display having carbon nanotube emitter and method of manufacturing the same |
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