CN1693406A - 抛光组合物和抛光方法 - Google Patents
抛光组合物和抛光方法 Download PDFInfo
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- CN1693406A CN1693406A CN200410081677.9A CN200410081677A CN1693406A CN 1693406 A CN1693406 A CN 1693406A CN 200410081677 A CN200410081677 A CN 200410081677A CN 1693406 A CN1693406 A CN 1693406A
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- polishing composition
- acid
- polishing
- citric acid
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- 238000005498 polishing Methods 0.000 title claims abstract description 176
- 239000000203 mixture Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims description 8
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 192
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 140
- 150000007524 organic acids Chemical class 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 69
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 51
- 239000002253 acid Substances 0.000 claims description 47
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 31
- 239000000084 colloidal system Substances 0.000 claims description 29
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 10
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 claims description 4
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 4
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 4
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 claims description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 43
- 239000008119 colloidal silica Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 229960001866 silicon dioxide Drugs 0.000 description 40
- 235000012239 silicon dioxide Nutrition 0.000 description 40
- 239000003082 abrasive agent Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- SBBXPTFXLZEDSN-UHFFFAOYSA-N 2-hydroxypropane-1,2,3-tricarboxylic acid;2-methylidenebutanedioic acid Chemical compound OC(=O)CC(=C)C(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O SBBXPTFXLZEDSN-UHFFFAOYSA-N 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229940075614 colloidal silicon dioxide Drugs 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 229950006191 gluconic acid Drugs 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- FBMUYWXYWIZLNE-UHFFFAOYSA-N nickel phosphide Chemical compound [Ni]=P#[Ni] FBMUYWXYWIZLNE-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005502 peroxidation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
磨料[wt%] | 有机酸或无机酸[wt%] | 氧化剂[wt%] | 抛光率[μm/min] | 凹陷 | ||||
实施例1 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 0.31 | 31%过氧化氢水溶液 | 5 | 0.65 | G |
实施例2 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 1.51 | 31%过氧化氢水溶液 | 5 | 0.67 | G |
实施例3 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.70 | G |
实施例4 | 氧化铝胶体二氧化硅 | 152 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.68 | G |
实施例5 | 氧化铝胶体二氧化硅 | 154 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.69 | G |
实施例6 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 30.05 | 31%过氧化氢水溶液 | 5 | 0.63 | G |
实施例7 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 30.3 | 31%过氧化氢水溶液 | 5 | 0.66 | G |
实施例8 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 0.5 | 0.60 | G |
实施例9 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 2 | 0.65 | G |
实施例10 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸亚氨乙酰乙酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.67 | G |
实施例11 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸衣康酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.66 | G |
实施例12 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸乙醇酸 | 31 | 31%过氧化氧水溶液 | 5 | 0.60 | G |
实施例13 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | 硝酸铁 | 5 | 0.60 | G |
实施例14 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | 过二硫酸 | 5 | 0.59 | G |
对照例1 | 氧化铝胶体二氧化硅 | 1510 | 琥珀酸 | 1 | 31%过氧化氢水溶液 | 5 | 0.50 | G |
对照例2 | 胶体二氧化硅 | 15 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.33 | NG |
对照例3 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸 | 3 | 31%过氧化氢水溶液 | 5 | 0.55 | G |
对照例4 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸 | 5 | 31%过氧化氢水溶液 | 5 | 0.56 | G |
对照例5 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | - | - | 0.46 | G |
对照例6 | 氧化铝胶体二氧化硅 | 1510 | 亚氨乙酰乙酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.53 | G |
对照例7 | 氧化铝胶体二氧化硅 | 1510 | 衣康酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.50 | G |
对照例8 | 氧化铝胶体二氧化硅 | 1510 | 乙醇酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.46 | G |
对照例9 | 氧化铝胶体二氧化硅 | 1510 | 硝酸铝 | 3 | 31%过氧化氢水溶液 | 5 | 0.47 | G |
对照例10 | 氧化铝胶体二氧化硅 | 1510 | 硝酸铝琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.51 | G |
对照例11 | 氧化铝胶体二氧化硅 | 1510 | 硝酸铁 | 3 | 31%过氧化氢水溶液 | 5 | 0.35 | G |
磨料[wt%] | 有机酸[wt%] | 氧化剂[wt%] | 抛光率[μm/min] | 凹陷 | ||||
实施例15 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.91 | G |
实施例16 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸亚氨乙酰乙酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.87 | G |
实施例17 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸衣康酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.85 | G |
实施例18 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸乙醇酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.83 | G |
对照例12 | 氧化铝胶体二氧化硅 | 1510 | 琥珀酸 | 1 | 31%过氧化氢水溶液 | 5 | 0.45 | NG |
对照例13 | 氧化铝 | 15 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.48 | NG |
对照例14 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸 | 3 | 31%过氧化氢水溶液 | 5 | 0.75 | G |
对照例15 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | - | - | 0.70 | G |
对照例16 | 氧化铝胶体二氧化硅 | 1510 | 亚氨乙酰乙酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.75 | G |
磨料[wt%] | 有机酸[wt%] | 氧化剂[wt%] | 抛光率[μm/min] | 凹陷 | ||||
实施例19 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.35 | G |
实施例20 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸亚氨乙酰乙酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.33 | G |
实施例21 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸衣康酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.32 | G |
实施例22 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸乙醇酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.31 | G |
对照例17 | 氧化铝胶体二氧化硅 | 1510 | 琥珀酸 | 1 | 31%过氧化氢水溶液 | 5 | 0.23 | G |
对照例18 | 氧化铝 | 15 | 柠檬酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.10 | NG |
对照例19 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸 | 3 | 31%过氧化氢水溶液 | 5 | 0.20 | G |
对照例20 | 氧化铝胶体二氧化硅 | 1510 | 柠檬酸琥珀酸 | 31 | - | - | 0.18 | G |
对照例21 | 氧化铝胶体二氧化硅 | 1510 | 亚氨乙酰乙酸琥珀酸 | 31 | 31%过氧化氢水溶液 | 5 | 0.25 | G |
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/746,779 | 2003-12-24 | ||
US10/746,779 US20050139119A1 (en) | 2003-12-24 | 2003-12-24 | Polishing composition |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1693406A true CN1693406A (zh) | 2005-11-09 |
CN1693411B CN1693411B (zh) | 2010-06-16 |
Family
ID=34136899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200410081677.9A Expired - Fee Related CN1693411B (zh) | 2003-12-24 | 2004-12-23 | 抛光组合物和抛光方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050139119A1 (zh) |
JP (1) | JP2005186269A (zh) |
CN (1) | CN1693411B (zh) |
GB (1) | GB2410030A (zh) |
MY (1) | MY158065A (zh) |
Cited By (7)
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US8404009B2 (en) | 2007-10-29 | 2013-03-26 | Kao Corporation | Polishing composition for hard disk substrate |
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JP2003336039A (ja) * | 2002-05-21 | 2003-11-28 | Sumitomo Bakelite Co Ltd | 研磨用組成物 |
JP4095833B2 (ja) * | 2002-05-30 | 2008-06-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US6896591B2 (en) * | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
-
2003
- 2003-12-24 US US10/746,779 patent/US20050139119A1/en not_active Abandoned
-
2004
- 2004-12-22 GB GB0428054A patent/GB2410030A/en not_active Withdrawn
- 2004-12-22 JP JP2004371410A patent/JP2005186269A/ja active Pending
- 2004-12-23 CN CN200410081677.9A patent/CN1693411B/zh not_active Expired - Fee Related
- 2004-12-23 MY MYPI20045374A patent/MY158065A/en unknown
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101130666B (zh) * | 2006-08-25 | 2011-11-09 | 安集微电子(上海)有限公司 | 一种含有混合磨料的低介电材料抛光液 |
US8404009B2 (en) | 2007-10-29 | 2013-03-26 | Kao Corporation | Polishing composition for hard disk substrate |
CN101423746B (zh) * | 2007-10-29 | 2014-03-19 | 花王株式会社 | 硬盘基板用研磨液组合物 |
TWI456033B (zh) * | 2007-10-29 | 2014-10-11 | Kao Corp | 硬碟基板用研磨液組合物 |
CN101177591B (zh) * | 2007-12-07 | 2010-06-02 | 天长市华润清洗科技有限公司 | 金属抛光剂及其制备方法 |
CN101469252A (zh) * | 2007-12-28 | 2009-07-01 | 福吉米股份有限公司 | 研磨用组合物 |
CN113817410A (zh) * | 2020-06-18 | 2021-12-21 | 福吉米株式会社 | 研磨用组合物的浓缩液及使用其的研磨方法 |
CN113817410B (zh) * | 2020-06-18 | 2024-05-10 | 福吉米株式会社 | 研磨用组合物的浓缩液及使用其的研磨方法 |
CN113150741A (zh) * | 2021-01-29 | 2021-07-23 | 芯璨半导体科技(山东)有限公司 | 适用于高硬质单晶芯片的化学机械研磨浆料 |
Also Published As
Publication number | Publication date |
---|---|
US20050139119A1 (en) | 2005-06-30 |
GB2410030A (en) | 2005-07-20 |
JP2005186269A (ja) | 2005-07-14 |
GB0428054D0 (en) | 2005-02-02 |
MY158065A (en) | 2016-08-30 |
CN1693411B (zh) | 2010-06-16 |
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