CN1688035A - Magnetosensitive device based on huge magneto impedance effect of micro mechanoelectric system - Google Patents
Magnetosensitive device based on huge magneto impedance effect of micro mechanoelectric system Download PDFInfo
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- CN1688035A CN1688035A CN 200510026606 CN200510026606A CN1688035A CN 1688035 A CN1688035 A CN 1688035A CN 200510026606 CN200510026606 CN 200510026606 CN 200510026606 A CN200510026606 A CN 200510026606A CN 1688035 A CN1688035 A CN 1688035A
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Abstract
A huge magnet impedance effect magnetic-sensing device based on micro-mechanic system is composed of a silicon substrate of SiO2 layer, leading pins, a zigzag sandwich structure soft magnet multi-layer film and a bias magnet, among which, the leading pins are led out from the copper layers at both ends of the multi-layer film and set on the substrate, the total zigzag sandwich structure soft magnet multi-layer film is set on the substrate with a SiO2 layer. The bias magnet is prepared with a fine process technology and by adhering the back of the magnetic-sensing device with epoxy glue.
Description
Technical field
What the present invention relates to is a kind of magnetosensitive device, specifically is a kind of giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system), belongs to sensor technical field.
Technical background
Along with developing rapidly of microelectric technique, need some novel magneto-dependent sensors novel, miniaturization, high performance, highly sensitive and that response speed is fast to come parameter around the monitoring of environmental as magnetic field, speed, rotating speed, displacement, angle, moment of torsion etc. in automotive electronics, Robotics, bioengineering, automation control etc.The magneto-dependent sensor that is using in the market or developing has Hall (Hall) effect sensor, anisotropic magnetoresistive (AMR) effect and giant magnetoresistance (GMR) effect sensor.Hall effect sensor is present most widely used magneto-dependent sensor, can be used for measurement, igniter, braking automobile anti-lock braking system (ABS), magnetosensitive switch of rotating speed of automobile engine etc., but hall device is because output signal is very weak and temperature stability is very poor, and its sensitivity is greatly limited.Novel silica-based magneto-dependent sensor is the magneto-dependent sensor of amr effect, it is a solid state device that is used to measure the magnetic field size and Orientation that adopts the development of MEMS (micro electro mechanical system) (MEMS) technology, but the size of amr effect has only 2%～4%, and its magnetic field sensitivity is less than 1%/Oe.The GMR effect can reach more than 80%, and the GMR transducer can obtain higher signal output, but driving magnetic field very high (more than the 300Oe), its magnetic field sensitivity is at 1%～2%/Oe.Discovered in recent years that soft magnetic material was showed giant magnetic impedance (Giant magneto-impedamce is abbreviated as GMI) effect under very little D.C. magnetic field, promptly when there is minor variations in magnetic field, will cause the great variety of soft magnetic material AC impedance.People have obtained very big giant magnetoresistance effect in film, multilayer film, band and the silk material of amorphous and nanocrystalline material preparation, its magnetic field sensitivity reaches 2%～300%/Oe, than the AMR and high 1 to 2 order of magnitude of GMR transducer, be 10～100 times of hall device.And the GMI transducer has advantages such as high sensitivity, response speed is fast, volume is little, utilize this high sensitivity characteristic of material, various magnetic switchs, magneto-dependent sensor, displacement transducer, angular transducer etc. can be made, industry-by-industries such as auto industry, machinery, communications and transportation, security personnel, electric power, control automatically, Aero-Space can be widely used in.
Find by literature search, (K.Mohri such as K.Mohri, T.Uchiyama, L.P.Shen, C.M.Cai, L.V.Panina, Y.Honkura, and M.Yamamoto) at " IEEE TRANSACTION ONMAGNETICS " (VOL.38, NO.5, pp.3063-3068, SEPTEMBER 2002) on delivered " Amorphous wire and CMOS IC-based sensitive micromagnetic sensors utilizingmagnetoimpedance (MI) and stress-impedance (SI) effects (U.S. electric electronic engineering association) " literary composition, this article has been mentioned the novel magneto-dependent sensor based on cobalt base amorphous silk giant magnetoresistance effect.The author adopts cobalt base amorphous silk as magnetosensitive device, and links to each other with the CMOS control circuit, has constituted the novel magneto-dependent sensor based on the amorphous wire giant magnetoresistance effect, and the scope in its measurement magnetic field is ± 3Oe, and resolution is the order of magnitude of 1 μ Oe, and operating frequency is 1MHz.(Y.Nishibe such as Y.Nishibe, H.Yamadera, N.Ohta, K.Tsukada, Y.Nonomura) at " SENSORS AND ACTUATORS " (VOL.82, pp.155-160,2000) delivered " Thin film magnetic field sensor utilizing magneto impedance effect (sensor and actuator) " literary composition on, this article has been mentioned the magnetic field sensor based on FeCoSiB/Cu/FeCoSiB multilayer film GMI effect, and multilayer film is to adopt the magnetically controlled sputter method preparation, and the length of transducer is 10mm, width is 2mm, the giant magnetic impedance rate of change reaches 100%, and driving frequency is 1MHz, and magnetic field sensitivity is 5%/Oe.(P.Delooze such as P.Delooze, L.V.Panina, D.J.Mapps, K.Ueno, H.Sano) at " IEEE TRANSACTION ON MAGNETICS " (VOL.40, NO.4, pp.2664-2666,2004) delivered " Sub-nano tesla resolution differential magnetic field sensor utilizingasymmetrical magnetoimpedance in multilayer films (U.S. electric electronic engineering association) " literary composition on, mentioned the magnetic field sensor that adopts CoFeB/Cu/CoFeB multilayer film antisymmetry giant magnetoresistance effect, multilayer film is to adopt the magnetically controlled sputter method preparation, the length of multilayer film is 5mm, width 40 μ m, the range of transducer are ± 1Oe that resolution is the order of magnitude of 1 μ Oe.For film, silk and band ratio are easier to preparation, are easy to form desirable magnetic anisotropy therein, can obtain comparatively desirable sensitive property.But silk and strip will run into many problems in the repeatability of microminiaturized, device performance and mass production and aspect the coupling of testing circuit, for example, welding, the installation in circuit of silk and strip be difficult, thread and the easy fragmentation of strip etc.And film GMI transducer has mass production and the ability compatible mutually with semiconductor integrated circuit, can reduce production costs greatly, so the research of thin-film material GMI effect and transducer thereof becomes the new focus of novel magneto-dependent sensor research and development.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) is provided, make it adopt meander-like sandwich structure multilayer film can improve the giant magnetoresistance effect of multilayer film greatly; The MEMS technology can realize its preparation technology and IC process compatible, can be produced on supporting testing circuit, realize filming, the miniaturization of whole sensor, and have high sensitivity, response speed is fast, the performance good reproducibility, temperature stability is good and be easy to production in enormous quantities.And, with surface acoustic wave (SurfaceAcoustic Wave, be called for short SAW) technology combination, can constitute wireless passive type magneto-dependent sensor, be used to detect under the adverse circumstances measurement with related physical quantities such as speed, displacement, angles.
The present invention is achieved by the following technical solutions, and the present invention is by band SiO
2The silicon substrate of layer, pin, meander-like sandwich structure soft-magnetic multilayer film and biasing permanent magnet are formed, and pin is drawn from the copper layer at multilayer film two ends, and is arranged on the substrate, and whole meander-like sandwich structure soft-magnetic multilayer film is positioned at band SiO
2On the silicon substrate of layer.The biasing permanent magnet prepares with Micrometer-Nanometer Processing Technology, and is pasted on the back side of magnetosensitive device with epoxy glue.
The meander-like sandwich structure that described meander-like sandwich structure soft-magnetic multilayer film is made of the FeNi soft magnetic film of the copper layer of centre, the peripheral parcel of copper layer, the width of middle copper layer is wrapped up by the FeNi soft magnetic film fully less than the width of FeNi soft magnetic film.
The width of described FeNi soft magnetic film is 1mm.
The width of copper layer is 0.1～0.8mm in the middle of described.
Further, the thickness of the FeNi soft magnetic film of the copper layer the upper and lower that mediate is identical, is 2～15 μ m, and middle copper layer thickness is 2～15 μ m, and length is at 6～20mm.
The manufacture method of magnetosensitive device of the present invention adopts thin film technique and MEMS technology, and the silicon chip of two-sided oxidation is handled, and obtains the double-sided overlay alignment symbology, so that improve alignment precision during exposure; Adopt standard-LIGA photoetching technique and microplating technology to prepare meander-like sandwich structure FeNi/Cu/FeNi soft-magnetic multilayer film; Adopt the physical etchings technology to remove bottom, the undercutting phenomenon of avoiding wet-etching technology to bring; By selecting suitable permanent magnet that the giant magnetoresistance effect curve of multilayer film is setovered, make magnetosensitive device be operated in the range of linearity.
The present invention compared with prior art has following useful effect:
(1) the present invention adopts standard-LIGA technology and electroplating technology to prepare FeNi/Cu/FeNi soft magnetic multilayer film giant magnetic impedance effect device, has advantages such as high sensitivity and response speed be fast and purposes widely.And the MEMS technology has the ability compatible mutually with large scale integrated circuit, and good reproducibility, cost are low, are easy to produce in enormous quantities; Can improve its giant magnetoresistance effect and magnetic field sensitivity by different structure again;
(2) the present invention adopts standard-LIGA technology and electroplating technology to prepare FeNi/Cu/FeNi soft-magnetic multilayer film material, apply magnetic field during by plating, can well control the magnetic anisotropy field of multi-layer film material, can obtain very big giant magnetoresistance effect, its magnetic field sensitivity is higher than 10%/Oe, far above the magnetic field sensitivity of AMR and GMR transducer, the problem that frangible, the device performance poor repeatability of device and processing difficulties and mass etc. bring when having avoided again adopting amorphous wire and strip as magnetic-sensitive material;
(3) the present invention has changed traditional line type membrane structure, but adopts meander-like sandwich structure multilayer film, the sensitivity that can improve the giant magnetoresistance effect and the device of multilayer film greatly;
(4) the present invention can improve giant magnetoresistance effect by width and the thickness that changes FeNi soft magnetic film and copper layer, and then improves the sensitivity of magnetosensitive device;
(5) the present invention can improve the giant magnetoresistance effect of multilayer film by annealing process, and then improves the sensitivity of magnetosensitive device.
(6) the present invention adopts Micrometer-Nanometer Processing Technology preparation biasing permanent magnet, to realize the linearisation of magnetosensitive device;
(7) the present invention adopts the AC driving mode, can conveniently realize filtering, tuning, vibration etc.
Description of drawings
Fig. 1 is the structural representation vertical view of meander-like sandwich structure FeNi/Cu/FeNi multilayer film of the present invention.
Wherein: 4 is pin, and 3 are band SiO
2The silicon substrate of layer, 2 Cu layers, the FeNi soft magnetic film of copper layer coated outside FeNi soft magnetic film 1,1 for electroplating for plating.
Fig. 2 is the structural representation planing surface view of meander-like sandwich structure FeNi/Cu/FeNi multilayer film of the present invention.
Wherein: 3 are band SiO
2The silicon substrate of layer, 2 Cu layers for plating, copper layer coated outside FeNi soft magnetic film 1,5 is the biasing permanent magnet.
Fig. 3 is the structural representation end view of meander-like sandwich structure FeNi/Cu/FeNi multilayer film of the present invention.
Wherein: 3 are band SiO
2The silicon substrate of layer, 5 are the biasing permanent magnet, 6 is meander-like sandwich structure FeNi/Cu/FeNi multilayer film.
Embodiment
Below in conjunction with accompanying drawing concrete structure of the present invention is further described.
As Figure 1-3, the present invention is by band SiO
2The silicon substrate 3 of layer, pin 4, biasing permanent magnet 5 and meander-like sandwich structure FeNi/Cu/FeNi soft-magnetic multilayer film 6 are formed, pin 4 is drawn from the copper layer at magnetosensitive device two ends, and be arranged on the substrate plane, meander-like sandwich structure soft-magnetic multilayer film 6 is positioned at band SiO
2On the substrate 3 of layer, the biasing permanent magnet is positioned at below the silicon substrate.
Described meander-like sandwich structure soft-magnetic multilayer film 6 is by the copper layer 2 of centre, the meander-like sandwich structure that the copper layer 2 peripheral FeNi soft magnetic film 1 that wraps up constitute, and the width of middle copper layer 2 is less than the width of FeNi soft magnetic film 1.
Described FeNi soft magnetic film width is 1mm.
The width of copper layer is 0.1～0.8mm in the middle of described.
The thickness of FeNi soft magnetic film 1 of copper layer 2 the upper and lower of mediating is identical, is 2～15 μ m, and copper layer 2 thickness are 2～15 μ m, and length is at 6～20mm.
Claims (7)
1, a kind of giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system), it is characterized in that, form by substrate (3), soft-magnetic multilayer film giant magnetic impedance material (6), biasing permanent magnet (5), pin (4), pin (4) is drawn from the copper layer (2) at magnetosensitive device two ends, and be arranged on the substrate plane (3), meander-like sandwich structure soft-magnetic multilayer film (6) is positioned on the substrate (3) of band SiO2 layer, and biasing permanent magnet (5) is positioned at below the silicon substrate.
2, the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, the alignment symbol is aimed at for exposure provides accurately.
3, the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) as claimed in claim 1, it is characterized in that, meander-like sandwich structure soft-magnetic multilayer film (6) is by the meander-like sandwich structure of peripheral FeNi soft magnetic film (1) formation of wrapping up of copper layer (2), the copper layer (2) of centre, and the width of middle copper layer (2) is less than the width of FeNi soft magnetic film (1).
4, the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, described FeNi soft magnetic film (1) width is 1mm.
5, the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, the width of described middle copper layer (2) is 0.1～0.8mm.
6, as claim 1 or 2,4 described giant magnetoresistance effect magnetosensitive devices based on MEMS (micro electro mechanical system), it is characterized in that, described copper layer (2) is further limited: the thickness of the soft magnetic film (1) of copper layer (2) the upper and lower that mediate is identical, be 2～15 μ m, copper layer (2) thickness is 2～15 μ m, and length is at 6～20mm.
7, the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, by regulating layers of material structural parameters and magnetic-field annealing in the multilayer film, can improve the giant magnetoresistance effect and the magnetic field sensitivity of multilayer film greatly.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101038305B (en) * | 2007-03-06 | 2010-05-19 | 吉林大学 | Array giant magnetic impedance effects current sensor |
| CN101644748B (en) * | 2009-09-23 | 2011-08-31 | 上海交通大学 | Giant magneto-impedance effect sensor with zigzag multi-turn structure |
| CN101699309B (en) * | 2009-10-13 | 2011-11-09 | 清华大学 | Giant magneto-impedance effect sensing probe based on flexible circuit board |
| CN102540112A (en) * | 2011-04-06 | 2012-07-04 | 江苏多维科技有限公司 | Single chip pull-push bridge type magnetic field sensor |
| CN103018688A (en) * | 2012-12-06 | 2013-04-03 | 电子科技大学 | Giant magneto impedance (GMI) and giant magneto resistance (GMR) combined magneto-dependent sensor |
| CN101410717B (en) * | 2006-03-09 | 2013-04-03 | 艾登有限公司 | Device and method for measuring electrical power |
| CN105699921A (en) * | 2016-01-21 | 2016-06-22 | 中国船舶重工集团公司第七二五研究所 | Method of double-axis giant magneto-impedance effect magnetosensitive device employing 3D printer equipment |
| CN105742005A (en) * | 2016-02-21 | 2016-07-06 | 林志苹 | Three-dimensional induction coil and preparation method thereof |
| CN107934906A (en) * | 2017-12-20 | 2018-04-20 | 爱科赛智能科技（台州）有限公司 | A kind of MEMS actuator based on fexible film and preparation method thereof |
| JP2019002715A (en) * | 2017-06-12 | 2019-01-10 | 昭和電工株式会社 | Magnetic sensor and manufacturing method of the same |
| CN111537921A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
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- 2005-06-09 CN CN 200510026606 patent/CN1688035A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101410717B (en) * | 2006-03-09 | 2013-04-03 | 艾登有限公司 | Device and method for measuring electrical power |
| CN101038305B (en) * | 2007-03-06 | 2010-05-19 | 吉林大学 | Array giant magnetic impedance effects current sensor |
| CN101644748B (en) * | 2009-09-23 | 2011-08-31 | 上海交通大学 | Giant magneto-impedance effect sensor with zigzag multi-turn structure |
| CN101699309B (en) * | 2009-10-13 | 2011-11-09 | 清华大学 | Giant magneto-impedance effect sensing probe based on flexible circuit board |
| CN102540112A (en) * | 2011-04-06 | 2012-07-04 | 江苏多维科技有限公司 | Single chip pull-push bridge type magnetic field sensor |
| CN103018688A (en) * | 2012-12-06 | 2013-04-03 | 电子科技大学 | Giant magneto impedance (GMI) and giant magneto resistance (GMR) combined magneto-dependent sensor |
| CN105699921A (en) * | 2016-01-21 | 2016-06-22 | 中国船舶重工集团公司第七二五研究所 | Method of double-axis giant magneto-impedance effect magnetosensitive device employing 3D printer equipment |
| CN105699921B (en) * | 2016-01-21 | 2018-05-01 | 中国船舶重工集团公司第七二五研究所 | A kind of method that twin shaft giant magnetoresistance effect magnetosensitive device is prepared using 3D printer |
| CN105742005A (en) * | 2016-02-21 | 2016-07-06 | 林志苹 | Three-dimensional induction coil and preparation method thereof |
| JP2019002715A (en) * | 2017-06-12 | 2019-01-10 | 昭和電工株式会社 | Magnetic sensor and manufacturing method of the same |
| CN107934906A (en) * | 2017-12-20 | 2018-04-20 | 爱科赛智能科技（台州）有限公司 | A kind of MEMS actuator based on fexible film and preparation method thereof |
| CN107934906B (en) * | 2017-12-20 | 2024-05-14 | 爱科赛智能科技(浙江)有限公司 | MEMS actuator based on flexible film and manufacturing method thereof |
| CN111537921A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
| CN111537921B (en) * | 2020-04-22 | 2022-02-01 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
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