CN100373651C - Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system - Google Patents
Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system Download PDFInfo
- Publication number
- CN100373651C CN100373651C CNB2005100266078A CN200510026607A CN100373651C CN 100373651 C CN100373651 C CN 100373651C CN B2005100266078 A CNB2005100266078 A CN B2005100266078A CN 200510026607 A CN200510026607 A CN 200510026607A CN 100373651 C CN100373651 C CN 100373651C
- Authority
- CN
- China
- Prior art keywords
- feni
- photoresist
- magnetosensitive device
- thickness
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Hall/Mr Elements (AREA)
Abstract
The present invention relates to method for preparing a giant magnetic impedance effect magnetosensitive device based a micro-electro-mechanical system, which belongs to the technical field of a sensor. In the present invention, the micro-electro-mechanical system (MEMS) technique is adopted to process a silicon chip of which the two sides are oxidated, and a double-side registration photoetching alignment sign is obtained so that the alignment precision is enhanced at the time of exposion. Quasi-LIGA photo etching and microplating technique are adopted to prepare a zigzag sandwich structure feni/cu/feni soft-magnetic multi-layer membrane material, the physical etching technique is adopted to remove a bottom layer, the undercutting phenomenon brought by a wet etching process is avoided, offset is carried out to curves of a giant magneto-impedance effect curve of a multi-layer film through the selection of an appropriate permanent magnet so that the magnetosensitive device operates in a linearity region. The present invention adopts the MEMS technique to realize that a preparatio process is compatible with an IC process and can be made together with a matched detection circuit to realize the filmization and the miniaturisation of the entire sensor; in addition, the present invention has the advantages of high sensitivity and response speed, good performance repeatability and temperature stability and easy mass production.
Description
Technical field
What the present invention relates to is a kind of manufacture method of magnetosensitive device, specifically is a kind of manufacture method of the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system).Belong to sensor technical field.
Technical background
Along with developing rapidly of microelectric technique, need some novel magneto-dependent sensors novel, miniaturization, high performance, highly sensitive and that response speed is fast to come parameter around the monitoring of environmental as magnetic field, speed, rotating speed, displacement, angle, moment of torsion etc. in automotive electronics, Robotics, bioengineering, automation control etc.The magneto-dependent sensor that is using in the market or developing has Hall (Hall) effect sensor, anisotropic magnetoresistive (AMR) effect and giant magnetoresistance (GMR) effect sensor.Hall effect sensor is present most widely used magneto-dependent sensor, can be used for measurement, igniter, braking automobile anti-lock braking system (ABS), magnetosensitive switch of rotating speed of automobile engine etc., but hall device is because output signal is very weak and temperature stability is very poor, and its sensitivity is greatly limited.Novel silica-based magneto-dependent sensor is the magneto-dependent sensor of amr effect, it is a solid state device that is used to measure the magnetic field size and Orientation that adopts the development of MEMS (micro electro mechanical system) (MEMS) technology, but the size of amr effect has only 2%～4%, and its magnetic field sensitivity is less than 1%/Oe.The GMR effect can reach more than 80%, and the GMR transducer can obtain higher signal output, but driving magnetic field very high (more than the 300Oe), its magnetic field sensitivity is at 1%～2%/Oe.Discovered in recent years that soft magnetic material was showed giant magnetic impedance (Giant magneto-impedamce is abbreviated as GMI) effect under very little D.C. magnetic field, promptly when there is minor variations in magnetic field, will cause the great variety of soft magnetic material AC impedance.People have obtained very big giant magnetoresistance effect in film, multilayer film, band and the silk material of amorphous and nanocrystalline material preparation, its magnetic field sensitivity reaches 2%～300%/Oe, than the AMR and high 1 to 2 order of magnitude of GMR transducer, be 10～100 times of hall device.And the GMI transducer has advantages such as high sensitivity, response speed is fast, volume is little, utilize this high sensitivity characteristic of material, various magnetic switchs, magneto-dependent sensor, displacement transducer, angular transducer etc. can be made, industry-by-industries such as auto industry, machinery, communications and transportation, security personnel, electric power, control automatically, Aero-Space can be widely used in.
Find by literature search, (K.Mohri such as K.Mohri, T.Uchiyama, L.P.Shen, C.M.Cai, LV. Panina, Y.Honkura, and M.Yamamoto) at " IEEE TRANSACTION ONMAGNETICS " (VOL.38, NO.5, pp.3063-3068, SEPTEMBER 2002) on delivered " Amorphous wire and CMOS IC-based sensitive micromagnetic sensors utilizingmagnetoimpedance (MI) and stress-impedance (SI) effects (U.S. electric electronic engineering association) " literary composition, this article has been mentioned the novel magneto-dependent sensor based on cobalt base amorphous silk giant magnetoresistance effect.The author adopts cobalt base amorphous silk as magnetosensitive device, and links to each other with the CMOS control circuit, has constituted the novel magneto-dependent sensor based on the amorphous wire giant magnetoresistance effect, and the scope in its measurement magnetic field is ± 3Oe, and resolution is the order of magnitude of 1 μ Oe, and operating frequency is 1MHz.Y. (Y. Nishibe such as Nishibe, H.Yamadera, N.Ohta, K.Tsukada, Y. Nonomura) at " SENSORS AND ACTUATORS " (VOL.82, pp.155-160,2000) delivered " Thin film magnetic field sensor utilizing magneto impedance effect (sensor and actuator) " literary composition on, this article has been mentioned the magnetic field sensor based on FeCoSiB/Cu/FeCoSiB multilayer film GMI effect, and multilayer film is to adopt the magnetically controlled sputter method preparation, and the length of transducer is 10mm, width is 2mm, the giant magnetic impedance rate of change reaches 100%, and driving frequency is 1MHz, and magnetic field sensitivity is 5%/Oe.(P.Delooze such as P.Delooze, L.V.Panina, D.J.Mapps, K.Ueno, H.Sano) at " IEEE TRANSACTION ON MAGNETICS " (VOL.40, NO.4, pp.2664-2666,2004) delivered " Sub-nano tesla resolution differential magnetic field sensor utilizingasymmetrical magnetoimpedance in multilayer films (U.S. electric electronic engineering association) " literary composition on, mentioned the magnetic field sensor that adopts CoFeB/Cu/CoFeB multilayer film antisymmetry giant magnetoresistance effect, multilayer film is to adopt the magnetically controlled sputter method preparation, the length of multilayer film is 5mm, width 40 μ m, the range of transducer are ± 10e that resolution is the order of magnitude of 1 μ Oe.For film, silk and band ratio are easier to preparation, are easy to form desirable magnetic anisotropy therein, can obtain comparatively desirable sensitive property.But silk and strip will run into many problems in the repeatability of microminiaturized, device performance and mass production and aspect the coupling of testing circuit, for example, welding, the installation in circuit of silk and strip be difficult, thread and the easy fragmentation of strip etc.And film GMI transducer has mass production and the ability compatible mutually with semiconductor integrated circuit, can reduce production costs greatly, so the research of thin-film material GMI effect and transducer thereof becomes the new focus of novel magneto-dependent sensor research and development.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of manufacture method of the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) is provided, make it adopt the MEMS technology can realize its preparation technology and IC process compatible, can be produced on supporting testing circuit, realize filming, the miniaturization of whole sensor, and have high sensitivity, response speed is fast, the performance good reproducibility, temperature stability is good and be easy to produce in enormous quantities.And, with surface acoustic wave (Surface Acoustic Wave, be called for short SAW) technology combination, can constitute wireless passive type magneto-dependent sensor, be used to detect under the adverse circumstances measurement with related physical quantities such as speed, displacement, angles.
The present invention is achieved by the following technical solutions, and the manufacture method of magnetosensitive device of the present invention adopts MEMS (micro electro mechanical system) (MEMS) technology, and the silicon chip of two-sided oxidation is handled, and obtains the double-sided overlay alignment symbology, so that improve alignment precision during exposure; Adopt standard-LIGA photoetching technique and microplating technology to prepare meander-like sandwich structure FeNi/Cu/FeNi soft-magnetic multilayer film material; Adopt the physical etchings technology to remove bottom, the undercutting phenomenon of avoiding wet-etching technology to bring; By selecting suitable permanent magnet that the giant magnetoresistance effect curve of multilayer film is setovered, make magnetosensitive device be operated in the range of linearity.
The step of the concrete manufacture method of the present invention is as follows:
1, silicon chip substrate two-sided (being A face and the B face) positive-glue removing of the two-sided oxidation of crossing in clean, with the photoresist oven dry, photoresist thickness is 5～6 μ m then, and the photoresist bake out temperature is 90～95 ℃, and the time is 30～60 minutes; After single face (B face) exposure, developing, etching silicon dioxide in the BHF corrosive liquid is removed all photoresists with acetone at last, obtains the double-sided overlay alignment symbology on the B face with silicon chip.
2, silicon chip another side (being called the A face) is carried out magnetosensitive device preparation technology, all carry out below at the A face;
3, sputter FeNi bottom, thickness 80～100nm;
4, positive-glue removing, photoresist thickness are 2～15 μ m, and the photoresist bake out temperature is 90～95 ℃, and the time is 30～60 minutes, and exposure and development obtain electroplating FeNi soft magnetic film photoresist mask pattern;
5, electroplate the FeNi soft magnetic film, thickness is 2～15 μ m, applies the magnetic field of 80kA/m in the electroplating process;
6, remove positive glue;
7, positive-glue removing, photoresist thickness are 15 μ m, and the photoresist bake out temperature is 90～95 ℃, and the time is 60 minutes, and exposure and development obtain electroplating Cu layer photoetching glue mask pattern;
8, electroplate the Cu layer, thickness is 2～15 μ m;
9, positive-glue removing, photoresist thickness are 15 μ m, and the photoresist bake out temperature is 90～95 ℃, and the time is 60 minutes, and exposure and development obtain electroplating FeNi soft magnetic film photoresist mask pattern;
10, electroplate the FeNi soft magnetic film, thickness is 2～15 μ m, applies the magnetic field of 80kA/m in the electroplating process;
11, remove positive glue, physical method is removed the FeNi bottom;
12, with the device that obtains 250 ℃ of following magnetic-field annealing half an hour in vacuum furnace, finally formed FeNi/Cu/FeNi multilayer film giant magnetoresistance effect device with uniaxial magnetic anisotropy.
13, adopt Micrometer-Nanometer Processing Technology preparation biasing permanent magnet, the size of magnet size and the magnitude of field intensity that produces are determined according to multilayer film giant magnetoresistance effect curve, is the B face with epoxy glue with the back side that permanent magnet is pasted on magnetosensitive device, has finally formed FeNi/Cu/FeNi multilayer film giant magnetoresistance effect magnetosensitive device.
The preparation technology of sputter FeNi bottom is in the above-mentioned steps: the vacuum of substrate is 8 * 10
-5Pa, sputtering condition are chosen as sputter Ar air pressure and sputtering power is respectively 0.67Pa and 600W, and argon flow amount is 0.02L/min.
The present invention compared with prior art has following useful effect:
(1) the present invention adopts standard-LIGA photoetching technique and electroplating technology to prepare FeNi/Cu/FeNi soft magnetic multilayer film giant magnetic impedance effect device, has advantages such as high sensitivity and response speed be fast and purposes widely.And the MEMS technology has the ability compatible mutually with large scale integrated circuit, and good reproducibility, cost are low, are easy to produce in enormous quantities;
(2) the present invention adopts standard-LIGA photoetching technique and electroplating technology to prepare FeNi/Cu/FeNi soft-magnetic multilayer film material, apply magnetic field during by plating, can well control the magnetic anisotropy field of multi-layer film material, can obtain very big giant magnetoresistance effect, its magnetic field sensitivity is higher than 10%/Oe, far above the magnetic field sensitivity of AMR and GMR transducer, the problem that frangible, the device performance poor repeatability of device and processing difficulties and mass etc. bring when having avoided again adopting amorphous wire and strip as magnetic-sensitive material;
(3) the present invention has changed traditional line type membrane structure, but adopts meander-like sandwich structure multilayer film, the sensitivity that can improve the giant magnetoresistance effect and the device of multilayer film greatly;
(4) the present invention can improve giant magnetoresistance effect by width and the thickness that changes FeNi soft magnetic film and copper layer, and then improves the sensitivity of magnetosensitive device;
(5) the present invention can improve the giant magnetoresistance effect of multilayer film by annealing process, and then improves the sensitivity of magnetosensitive device.
(6) the present invention adopts Micrometer-Nanometer Processing Technology preparation biasing permanent magnet, to realize the linearisation of magnetosensitive device;
(7) the present invention adopts the AC driving mode, can conveniently realize filtering, tuning, vibration etc.
Embodiment
Further describe below in conjunction with embodiment.
Manufacture method of the present invention, concretely:
(1) silicon chip substrate two-sided (being A face and the B face) positive-glue removing of the clean two-sided oxidation of crossing, photoresist thickness is 5 μ m, and the photoresist bake out temperature is 95 ℃, and the time is 30 minutes; After single face (B face) exposure and the development, adopt BHF corrosive liquid etching silicon dioxide, etching temperature is 40 ℃, removes photoresist then, obtains the double-sided overlay alignment symbology on the B face;
(2) silicon chip another side (being called the A face) is carried out magnetosensitive device preparation technology, all carry out below at the A face;
(3) sputter FeNi bottom, thickness 80～100nm;
(4) positive-glue removing, photoresist thickness are 15 μ m, and the photoresist bake out temperature is 90～95 ℃, and the time is 60 minutes, and exposure and development obtain electroplating FeNi soft magnetic film photoresist mask pattern;
(5) electroplate the FeNi soft magnetic film, thickness is 2～15 μ m, applies the magnetic field of 80kA/m in the electroplating process;
(6) remove positive glue;
(7) positive-glue removing, photoresist thickness are 15 μ m, and the photoresist bake out temperature is 90～95 ℃, and the time is 60 minutes, and exposure and development obtain electroplating Cu layer photoetching glue mask pattern;
(8) electroplate the Cu layer, thickness is 2～15 μ m;
(9) positive-glue removing, photoresist thickness are 15 μ m, and the photoresist bake out temperature is 90～95 ℃, and the time is 60 minutes, and exposure and development obtain electroplating FeNi soft magnetic film photoresist mask pattern;
(10) electroplate the FeNi soft magnetic film, thickness is 2～15 μ m, applies the magnetic field of 80kA/m in the electroplating process;
(11) remove positive glue, physical method is removed the FeNi bottom;
(12) with the device that obtains 250 ℃ of following magnetic-field annealing half an hour in vacuum furnace, finally formed multilayer film impedance effect device with uniaxial magnetic anisotropy.
(13) adopt Micrometer-Nanometer Processing Technology preparation biasing permanent magnet, permanent magnet is pasted on the B face of magnetosensitive device, finally formed FeNi/Cu/FeNi multilayer film giant magnetoresistance effect magnetosensitive device with epoxy glue.
Utilize magnetosensitive device that the present invention makes by band SiO
2The silicon substrate of layer, pin, meander-like sandwich structure FeNi/Cu/FeNi soft-magnetic multilayer film magnetosensitive device and biasing permanent magnet are formed, the meander-like sandwich structure that described meander-like sandwich structure soft-magnetic multilayer film is made of the FeNi soft magnetic film of the copper layer of centre, the peripheral parcel of copper layer, the width of middle copper layer is wrapped up by the FeNi soft magnetic film fully less than the width of FeNi soft magnetic film; Pin is drawn from the copper layer at magnetosensitive device two ends; Whole meander-like sandwich structure soft-magnetic multilayer film magnetosensitive device is positioned at band SiO
2On the silicon base of layer.The biasing permanent magnet prepares with Micrometer-Nanometer Processing Technology, and is pasted on the back side of magnetosensitive device with epoxy glue.
Claims (4)
1. manufacture method based on the giant magnetoresistance effect magnetosensitive device of MEMS (micro electro mechanical system) is characterized in that concrete steps are as follows:
(1) two-sided at the silicon chip of two-sided oxidation is positive-glue removing on A face and the B face, and photoresist thickness is 5～6 μ m, and with the substrate base oven dry, the photoresist bake out temperature is 95 ℃, and the time is 30 minutes; After the exposure of B face, the development, wet etching SiO
2, remove photoresist then, obtain the double-sided overlay alignment symbology on the B face; To the silicon chip another side is that the A face carries out magnetosensitive device preparation technology, all carries out at the A face below;
(2) sputter FeNi bottom, thickness are 80～100nm;
(3) positive-glue removing, photoresist thickness are 15 μ m, and with the substrate base oven dry, the photoresist bake out temperature is 95 ℃, and drying time is 60 minutes, exposure, development;
(4) electroplate the FeNi soft magnetic film, thickness is 2～15 μ m, during plating along the magnetic field that laterally applies 80kA/m of film;
(5) remove positive glue; Positive-glue removing, photoresist thickness are 15 μ m, and with the substrate base oven dry, the photoresist bake out temperature is 95 ℃, and drying time is 60 minutes, exposure, development;
(6) electroplate the Cu layer, thickness is 2～15 μ m;
(7) positive-glue removing, photoresist thickness are 15 μ m, and with the substrate base oven dry, the photoresist bake out temperature is 95 ℃, and drying time is 60 minutes, exposure, development;
(8) electroplate the FeNi soft magnetic film, thickness is 2～15 μ m, during plating along the magnetic field that laterally applies 80kA/m of film;
(9) remove positive glue, physical method is removed the FeNi bottom;
(10) 250 ℃ of following magnetic-field annealing half an hour in vacuum furnace;
(11) adopting Micrometer-Nanometer Processing Technology preparation biasing permanent magnet, is the B face with epoxy glue with the back side that permanent magnet is pasted on magnetosensitive device, has finally formed FeNi/Cu/FeNi multilayer film giant magnetoresistance effect magnetosensitive device.
2. the manufacture method of the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that, the overlay alignment symbol is aimed at for exposure provides accurately.
3. the manufacture method of the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) as claimed in claim 1 is characterized in that the FeNi/Cu/FeNi multilayer film of plating is a soft-magnetic multilayer film, is the meander-like sandwich structure.
4. the manufacture method of the giant magnetoresistance effect magnetosensitive device based on MEMS (micro electro mechanical system) according to claim 1, it is characterized in that the preparation technology of described sputter FeNi bottom is: vacuum degree is 8 * 10
-5Pa, sputter material is FeNi, sputters in the Ar air pressure environment to carry out, and the air pressure of Ar gas is 0.67Pa, and sputtering power is 600W, and argon flow amount is 0.02L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100266078A CN100373651C (en) | 2005-06-09 | 2005-06-09 | Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100266078A CN100373651C (en) | 2005-06-09 | 2005-06-09 | Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1694276A CN1694276A (en) | 2005-11-09 |
| CN100373651C true CN100373651C (en) | 2008-03-05 |
Family
ID=35353151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100266078A Expired - Fee Related CN100373651C (en) | 2005-06-09 | 2005-06-09 | Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100373651C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101038305B (en) * | 2007-03-06 | 2010-05-19 | 吉林大学 | Array giant magnetic impedance effects current sensor |
| CN103076577B (en) * | 2012-08-03 | 2016-12-21 | 陈磊 | A kind of magnetoresistive sensor chip detecting magnetic field and acceleration |
| CN102928596B (en) * | 2012-10-18 | 2015-01-21 | 上海交通大学 | Giant magneto-impedance effect biosensor for detecting serum tumor markers |
| CN102937651B (en) * | 2012-10-18 | 2014-12-24 | 上海交通大学 | Giant magneto-impedance effect biosensor preparation method for serum tumor marker detection |
| CN103420328B (en) * | 2013-08-29 | 2016-06-01 | 上海华虹宏力半导体制造有限公司 | AMR MEMS manufacture method |
| CN105068027A (en) * | 2015-07-17 | 2015-11-18 | 袁丽 | Intelligent magnetic sensor and vehicle detection method based on same |
| CN110565139A (en) * | 2019-09-17 | 2019-12-13 | 哈尔滨工业大学 | Composite structure microfilament with high impedance performance and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6117114B2 (en) * | 1978-11-16 | 1986-05-06 | Tdk Electronics Co Ltd | |
| US20040087037A1 (en) * | 2002-10-31 | 2004-05-06 | Honeywell International Inc. | Etch-stop material for improved manufacture of magnetic devices |
| WO2004057055A1 (en) * | 2002-12-23 | 2004-07-08 | University College Cork-National University Of Ireland, Cork | Plating of multi-layer structures |
| CN1564280A (en) * | 2004-04-22 | 2005-01-12 | 上海交通大学 | Prepn. process for magnetic core solenoidal microinduction element of micro-electromechanical system |
-
2005
- 2005-06-09 CN CNB2005100266078A patent/CN100373651C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6117114B2 (en) * | 1978-11-16 | 1986-05-06 | Tdk Electronics Co Ltd | |
| US20040087037A1 (en) * | 2002-10-31 | 2004-05-06 | Honeywell International Inc. | Etch-stop material for improved manufacture of magnetic devices |
| WO2004057055A1 (en) * | 2002-12-23 | 2004-07-08 | University College Cork-National University Of Ireland, Cork | Plating of multi-layer structures |
| CN1564280A (en) * | 2004-04-22 | 2005-01-12 | 上海交通大学 | Prepn. process for magnetic core solenoidal microinduction element of micro-electromechanical system |
Non-Patent Citations (1)
| Title |
|---|
| Cu层宽度对弯曲型三明治结构FeCuNbCrSiB/Cu/FeCuNbCrSiB多层膜巨磁阻抗效应的影响. 张亚民，陈吉安等.磁性材料及器件，第36卷第1期. 2005 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1694276A (en) | 2005-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100373651C (en) | Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system | |
| CN1688035A (en) | Magnetosensitive device based on huge magneto impedance effect of micro mechanoelectric system | |
| CN100431188C (en) | Method for making magnetosensitive device based on soft magnetic multilayer huge magnetoimpedance effect | |
| US9007055B2 (en) | Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device | |
| KR100645291B1 (en) | Magnetic sensor and method of producing the same | |
| CN101932912B (en) | Angle sensor, angle sensor manufacturing method, and angle detection device using the angle sensor | |
| Li et al. | Flexible magnetoimpedance sensor | |
| CN105866715B (en) | A kind of preparation method of linear anisotropic magnetoresistive sensor | |
| WO2012136132A1 (en) | Single chip bridge magnetic field sensor and preparation method thereof | |
| JP2002357489A (en) | Stress sensor | |
| EP1399748A2 (en) | Semimanufacture for a sensor for measuring a magnetic field | |
| CN103033770A (en) | Giant magneto-impedance effect two-dimensional magnetic field sensor | |
| Chen et al. | Effect of sputtering parameters and sample size on giant magnetoimpedance effect in NiFe and NiFe/Cu/NiFe films | |
| NazariNejad et al. | Giant magneto-impedance thin film magnetic sensor | |
| CN113008419A (en) | Magneto-resistance type integrated stress sensor and preparation method and application thereof | |
| CN1694275A (en) | Magnetosensitive device based on soft magnetic multilayer film giant magnetic impedance effect | |
| Wang et al. | Enhancing the linearity of giant magnetoresistance sensors by magnetic anisotropic design and low temperature annealing | |
| CN1687729A (en) | Method for manufacturing force-sensing parts based on micro electromechanical system | |
| KR101233662B1 (en) | Flexible magnetoresistance sensor and manufacturing method thereof | |
| KR100704856B1 (en) | Compact Micro Magnetic Field Detecting Sensor Using Magneto Impedance Effects and Method for Making the Same | |
| Oh et al. | Highly flexible magnetoelectronic device integrated with embedded Ag nanoparticle electrode | |
| CN1275028C (en) | Soft-magnetic multilayer film force-sensitive sensor and preparation method thereof | |
| CN117177654B (en) | Magneto-resistive element, manufacturing method thereof and electronic equipment | |
| US8198886B2 (en) | Magnetic detecting device and method for manufacturing the same | |
| CN117320536A (en) | Self-driven spin sensor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080305 Termination date: 20130609 |