CN1681124A - 集成电路结构及其形成方法 - Google Patents
集成电路结构及其形成方法 Download PDFInfo
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- CN1681124A CN1681124A CN200510059170.8A CN200510059170A CN1681124A CN 1681124 A CN1681124 A CN 1681124A CN 200510059170 A CN200510059170 A CN 200510059170A CN 1681124 A CN1681124 A CN 1681124A
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/982—Varying orientation of devices in array
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (39)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/708,907 US6998684B2 (en) | 2004-03-31 | 2004-03-31 | High mobility plane CMOS SOI |
US10/708,907 | 2004-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1681124A true CN1681124A (zh) | 2005-10-12 |
CN100367500C CN100367500C (zh) | 2008-02-06 |
Family
ID=35059712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100591708A Active CN100367500C (zh) | 2004-03-31 | 2005-03-24 | 集成电路结构及其形成方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6998684B2 (zh) |
JP (1) | JP4243671B2 (zh) |
CN (1) | CN100367500C (zh) |
TW (1) | TWI332251B (zh) |
Cited By (6)
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CN102790054A (zh) * | 2011-05-16 | 2012-11-21 | 中国科学院上海微***与信息技术研究所 | 锗和iii-v混合共平面的半导体结构及其制备方法 |
CN103650146A (zh) * | 2011-07-05 | 2014-03-19 | 国际商业机器公司 | 具有均匀高度和底部隔离的体鳍片fet |
CN103715091A (zh) * | 2012-09-29 | 2014-04-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体基底、晶体管和鳍部的形成方法 |
CN104966672A (zh) * | 2015-06-30 | 2015-10-07 | 上海华力微电子有限公司 | 鳍式场效应管基体制备方法 |
CN105453251A (zh) * | 2013-08-01 | 2016-03-30 | 高通股份有限公司 | 在基板上从不同材料形成鳍的方法 |
CN106711194A (zh) * | 2016-12-28 | 2017-05-24 | 中国科学院微电子研究所 | 一种环栅场效应晶体管及其制备方法 |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050275018A1 (en) * | 2004-06-10 | 2005-12-15 | Suresh Venkatesan | Semiconductor device with multiple semiconductor layers |
US7094634B2 (en) * | 2004-06-30 | 2006-08-22 | International Business Machines Corporation | Structure and method for manufacturing planar SOI substrate with multiple orientations |
US7439542B2 (en) * | 2004-10-05 | 2008-10-21 | International Business Machines Corporation | Hybrid orientation CMOS with partial insulation process |
US7144785B2 (en) * | 2004-11-01 | 2006-12-05 | Advanced Micro Devices, Inc. | Method of forming isolation trench with spacer formation |
US7393733B2 (en) * | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
US7196380B2 (en) * | 2005-01-13 | 2007-03-27 | International Business Machines Corporation | High mobility plane FinFET with equal drive strength |
US7388278B2 (en) * | 2005-03-24 | 2008-06-17 | International Business Machines Corporation | High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods |
US7348611B2 (en) * | 2005-04-22 | 2008-03-25 | International Business Machines Corporation | Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US20070267722A1 (en) * | 2006-05-17 | 2007-11-22 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
WO2006125040A2 (en) * | 2005-05-17 | 2006-11-23 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication |
FR2886763B1 (fr) * | 2005-06-06 | 2007-08-03 | Commissariat Energie Atomique | Procede de realisation d'un composant comportant au moins un element a base de germanium et composant ainsi obtenu |
US7473985B2 (en) * | 2005-06-16 | 2009-01-06 | International Business Machines Corporation | Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates |
US7358164B2 (en) * | 2005-06-16 | 2008-04-15 | International Business Machines Corporation | Crystal imprinting methods for fabricating substrates with thin active silicon layers |
US7439108B2 (en) * | 2005-06-16 | 2008-10-21 | International Business Machines Corporation | Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same |
US7247887B2 (en) * | 2005-07-01 | 2007-07-24 | Synopsys, Inc. | Segmented channel MOS transistor |
US7190050B2 (en) * | 2005-07-01 | 2007-03-13 | Synopsys, Inc. | Integrated circuit on corrugated substrate |
US7265008B2 (en) | 2005-07-01 | 2007-09-04 | Synopsys, Inc. | Method of IC production using corrugated substrate |
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US7439109B2 (en) | 2008-10-21 |
JP4243671B2 (ja) | 2009-03-25 |
TW200537648A (en) | 2005-11-16 |
CN100367500C (zh) | 2008-02-06 |
US20050224875A1 (en) | 2005-10-13 |
US6998684B2 (en) | 2006-02-14 |
JP2005294828A (ja) | 2005-10-20 |
US20060076623A1 (en) | 2006-04-13 |
TWI332251B (en) | 2010-10-21 |
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