CN1656581A - 用于从电源线去耦高频信号的去耦模块 - Google Patents
用于从电源线去耦高频信号的去耦模块 Download PDFInfo
- Publication number
- CN1656581A CN1656581A CNA038117460A CN03811746A CN1656581A CN 1656581 A CN1656581 A CN 1656581A CN A038117460 A CNA038117460 A CN A038117460A CN 03811746 A CN03811746 A CN 03811746A CN 1656581 A CN1656581 A CN 1656581A
- Authority
- CN
- China
- Prior art keywords
- decoupling
- decoupling module
- module
- insulation material
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims description 25
- 239000012774 insulation material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 238000010276 construction Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 57
- 239000010410 layer Substances 0.000 description 36
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010033799 Paralysis Diseases 0.000 description 1
- 238000009954 braiding Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000009527 percussion Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- -1 therefore Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Microwave Amplifiers (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Communication Cables (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Filters And Equalizers (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10223295 | 2002-05-24 | ||
DE10223295.4 | 2002-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1656581A true CN1656581A (zh) | 2005-08-17 |
CN100483581C CN100483581C (zh) | 2009-04-29 |
Family
ID=29557303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038117460A Expired - Fee Related CN100483581C (zh) | 2002-05-24 | 2003-05-13 | 用于从电源线去耦高频信号的去耦模块 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7154735B2 (zh) |
EP (1) | EP1512157B8 (zh) |
JP (1) | JP2005527165A (zh) |
CN (1) | CN100483581C (zh) |
AT (1) | ATE321349T1 (zh) |
AU (1) | AU2003230077A1 (zh) |
DE (1) | DE60304172T2 (zh) |
WO (1) | WO2003100800A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112652873A (zh) * | 2020-12-03 | 2021-04-13 | 北京工业大学 | 一种扇形微带线去耦电路的设计 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10255475A1 (de) * | 2002-11-28 | 2004-06-09 | Philips Intellectual Property & Standards Gmbh | Entkopplungsmodul zum Auskoppeln hochfrequenter Signale aus einer mit einer Induktivität behafteten Spannungsversorgungsleitung |
US9741673B2 (en) | 2007-06-22 | 2017-08-22 | Cree, Inc. | RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features |
EP2867991B1 (en) | 2012-06-29 | 2020-03-18 | Cree, Inc. | Rf transistor packages with high frequency stabilization features |
US8964427B2 (en) * | 2012-06-29 | 2015-02-24 | Rockwell Automation Technologies, Inc. | Adaptive online filter for DC offset elimination |
US9875848B2 (en) | 2015-12-21 | 2018-01-23 | Qualcomm Incorporated | MIM capacitor and method of making the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4734819A (en) * | 1985-12-20 | 1988-03-29 | Rogers Corporation | Decoupling capacitor for surface mounted leadless chip carrier, surface mounted leaded chip carrier and pin grid array package |
US5472900A (en) * | 1991-12-31 | 1995-12-05 | Intel Corporation | Capacitor fabricated on a substrate containing electronic circuitry |
US5422782A (en) * | 1992-11-24 | 1995-06-06 | Circuit Components Inc. | Multiple resonant frequency decoupling capacitor |
SE511824C2 (sv) * | 1997-08-22 | 1999-12-06 | Ericsson Telefon Ab L M | Avkopplingskondensator samt chipsmodul |
US6515359B1 (en) * | 1998-01-20 | 2003-02-04 | Micron Technology, Inc. | Lead frame decoupling capacitor semiconductor device packages including the same and methods |
US6801422B2 (en) * | 1999-12-28 | 2004-10-05 | Intel Corporation | High performance capacitor |
US6775150B1 (en) * | 2000-08-30 | 2004-08-10 | Intel Corporation | Electronic assembly comprising ceramic/organic hybrid substrate with embedded capacitors and methods of manufacture |
US6760232B2 (en) * | 2001-03-16 | 2004-07-06 | Sun Microsystems, Inc. | Power distribution system having a dedicated power structure with apertures for mounting integrated circuit packages |
US6700794B2 (en) * | 2001-07-26 | 2004-03-02 | Harris Corporation | Decoupling capacitor closely coupled with integrated circuit |
US6847527B2 (en) * | 2001-08-24 | 2005-01-25 | 3M Innovative Properties Company | Interconnect module with reduced power distribution impedance |
-
2003
- 2003-05-13 US US10/515,467 patent/US7154735B2/en not_active Expired - Lifetime
- 2003-05-13 AT AT03722919T patent/ATE321349T1/de not_active IP Right Cessation
- 2003-05-13 WO PCT/IB2003/001855 patent/WO2003100800A1/en active IP Right Grant
- 2003-05-13 DE DE60304172T patent/DE60304172T2/de not_active Expired - Lifetime
- 2003-05-13 EP EP03722919A patent/EP1512157B8/en not_active Expired - Lifetime
- 2003-05-13 AU AU2003230077A patent/AU2003230077A1/en not_active Abandoned
- 2003-05-13 JP JP2004508361A patent/JP2005527165A/ja active Pending
- 2003-05-13 CN CNB038117460A patent/CN100483581C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112652873A (zh) * | 2020-12-03 | 2021-04-13 | 北京工业大学 | 一种扇形微带线去耦电路的设计 |
Also Published As
Publication number | Publication date |
---|---|
EP1512157A1 (en) | 2005-03-09 |
DE60304172D1 (de) | 2006-05-11 |
JP2005527165A (ja) | 2005-09-08 |
ATE321349T1 (de) | 2006-04-15 |
US20060007632A1 (en) | 2006-01-12 |
AU2003230077A1 (en) | 2003-12-12 |
EP1512157B8 (en) | 2006-07-19 |
CN100483581C (zh) | 2009-04-29 |
DE60304172T2 (de) | 2007-01-04 |
EP1512157B1 (en) | 2006-03-22 |
US7154735B2 (en) | 2006-12-26 |
WO2003100800A1 (en) | 2003-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070907 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070907 Address after: Holland Ian Deho Finn Applicant after: NXP B.V. Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: CALLAHA XILE CO., LTD. Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20120121 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120121 Address after: American Delaware Patentee after: Callehan Tiele Co.,Ltd. Address before: Holland Ian Deho Finn Patentee before: NXP B.V. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090429 |
|
CF01 | Termination of patent right due to non-payment of annual fee |