CN1650416A - Substrate processing device and substrate processing method - Google Patents
Substrate processing device and substrate processing method Download PDFInfo
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- CN1650416A CN1650416A CNA038099241A CN03809924A CN1650416A CN 1650416 A CN1650416 A CN 1650416A CN A038099241 A CNA038099241 A CN A038099241A CN 03809924 A CN03809924 A CN 03809924A CN 1650416 A CN1650416 A CN 1650416A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/07—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers Not used, see H01L21/677
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A substrate processing device and a substrate processing method for general purpose capable of suppressing the contamination of atmosphere in a processing chamber through carriers, continuously performing a stable conveyance and a high quality substrate processing, and coping with further upsizing substrates and various substrate dimensions, the device comprising a load lock chamber allowing the carriers having the substrate mounted thereon to be carried therein, a substrate transfer chamber having a transfer mechanism for transferring the substrate between the carriers, and a substrate processing chamber for applying a specified processing to the substrate, characterized in that the first carrier moves between the load lock chamber and the substrate transfer chamber and the second carrier moves between the substrate transfer chamber and the substrate processing chamber, and the substrate is transferred between the first carrier and the second carrier by the transfer mechanism.
Description
Technical field
The present invention relates to a kind of substrate board treatment and processing method, its carrier that will be mounted with substrate with continuous conveyance to process chamber and carry out predetermined process, particularly about can solving, and then form processing such as quality good film and etching and stablized and carry out because of the process chamber environment of carrier due to moving between process chamber and atmosphere is subjected to pollution problems.
Background technology
Known example as substrate board treatment is illustrated with evaporation coating device at manufacturing shown in Figure 7.As shown in Figure 7, in the known evaporation coating device, be used to move into carrier load lock (ロ one De ロ Star Network) 10, heating chamber 70, deposited chamber 30, be used to take out of the load lock 10 of carrier ' etc., all linked, and in each chamber, be provided with the conveyance unit 4 of carrier 2 by gate valve 41 ~ 43.As conveyance unit 4, suitable structure is: usually, a plurality of conveyance rollers are arranged to two rows, and utilize drive system to rotate roller, so that mounting is moved in the carrier on the roller side by side.Substrate 3 is loaded in atmosphere on the carrier 2, and with carrier 2 from load lock 10 conveyances to heating chamber 70, be heated to set point of temperature for substrate after, be resent to deposited chamber 30 to form film.Thereafter, carrier 2 is sent to load lock 10 ' locate, and is taken out in the atmosphere again.The substrate 3 that recycling is finished ' after, be loaded with untreatment base 3 on the carrier 2 once more, and be back in the load lock 10.By repeating these operations, on a plurality of substrates, can form film continuously.
In the method for above prior art, the carrier 2 that is used for the conveyance substrate in atmosphere and vacuum between conveyance repeatedly.So, be attached to film on the carrier and can adsorb moisture in the atmosphere, impurity etc., and, if when its film surface adheres to another film, will cause adaptation to reduce and make film be easy to peel off.Because of particle that film separation produced absorbs in the film so that film defects, and become the reason that rate of finished products reduces.
In addition, when utilizing evaporation coating device shown in Figure 7 to form the MgO film of plasma display (PDP), find on its display performance, very big problem can occur.Form if repeat that substrate is carried out film, as shown in Figure 8, the water partial pressure in the deposited chamber rises, and finds that the quality of MgO film can change thereupon.In other words, if the film that repeats about 250 times forms, the deposited chamber water partial pressure becomes 3 * 10
-4About Pa, and the MgO film that obtains shown in the X-ray diffracting spectrum of Fig. 9, is mixed with the film of the diffracted intensity of (200) face and (220) face on (111) face.The secondary electron emission factor of MgO film can be different because of the crystal plane of foundation, so the mixed mutually situation of crystal plane generation, then produces brightness irregularities, makes and significantly reduce the PDP display performance.Thereby, in order to ensure the high-performance display performance, so the water partial pressure of deposited chamber must be maintained 3 * 10
-4Below the Pa.
For solve above-mentioned attachment film peel off problem and moisture enters problems such as deposited chamber, Japanese patent laid-open 9-279341 communique has disclosed a kind of evaporation coating device.This evaporation coating device, its structure as shown in figure 10, be used to move into the load lock 10 of substrate, deposited chamber 30 and be used to take out of the load lock 10 of substrate ' etc., all by gate valve 41,42 are linked, and deposited chamber 30 comprises and is used for the substrate 3 that conveyance from load lock 10 is come is loaded into substrate loading part 31 on the carrier 2 (pallet), steam plating part 32 and will finish dealing with after substrate send to load lock 10 ' interior substrate recoverer 33, and carrier 2 just circulates in loading part, between steam plating part and the recoverer, can avoid it to be exposed in the atmosphere.Promptly, after substrate 3 is moved into to the load lock 10, utilization is by the above-mentioned conveyance conveyance unit 4 that roller constituted side by side, make on its carrier that is loaded into substrate loading part 31 2 (pallet), and conveyance is heated to set point of temperature to form the MgO film by heating arrangements (not icon) again to steam plating part 32.Thereafter, carrier 2 by conveyance to substrate recoverer 33 places, from carrier 2, take off again treated substrate 3 ' only substrate is taken out in load lock 10 ' in.On the other hand, carrier 2 is back to substrate loading part 31 places along conveyance path, top.So carrier conveyance in a vacuum always, can significantly control particle so can avoid making attachment film contact atmosphere produces, and the result that may command moisture etc. enters makes whole of substrate go up and forms to have identical crystal plane and uniform MgO film, can make its corresponding high-performance PDP.
Yet, find that in fact the maximization of counterpart substrate etc. has sizable difficulty in evaporation coating device shown in Figure 10.That is,, cause producing on the large substrate bigger bending because in the transport method of a substrate of conveyance, substrate two ends mounting gives conveyance on the conveyance roller.As a result, cause the conveyance instability, even cause the fracture of substrate, generation is difficult to make problem high-accuracy, high-performance PDP.In order to shorten the production cycle, this substrate during with the horizontal direction conveyance, is more highlighted this problem.And, need carry out various settings according to the size of substrate, as setting between the conveyance roller row spacing etc., so that substrate that can't corresponding multiple size, have the low shortcoming of versatility.
So,, learn that device must be made into the structure on the carrier that substrate is loaded into given size when moving into substrate, and utilize this device construction for film separation and keep membrane quality research for the maximization and the variation of counterpart substrate.Find under study for action: developed a kind of evaporation coating device, the structure of this device, be when film forms, to cover carrier to be attached on the carrier to suppress film with shielding part, and shielding part does not take out and it is stayed in the vacuum chamber (Japanese patent laid-open 11-131232 communique), this device and device construction shown in Figure 7 are compared, though improve to some extent, still be not enough to corresponding high-accuracy, high performance large-scale PDP.For example, the shielding part opening is during greater than carrier openings portion, film is attached on the carrier, generation is as the problems referred to above, if and the shielding part peristome is less, will make deposition material flow to substrate peripheral part place and pile up, become the form that film thickness is thin and crystal plane mixes mutually, produce the problem of brightness irregularities.
The problems referred to above, not only in the MgO evaporation coating device, equally also in being used for processing unit such as film formation devices such as sputter that various films form or CVD or Etaching device, take place, as in vacuum substrate process field, just expecting to have a kind of membrane quality and handling property not to be impacted, and can realize continuously and the substrate transfer method adopted therein of stable treated.
Summary of the invention
In this case, the object of the present invention is to provide a kind of substrate board treatment and processing method, it can suppress to utilize the pollution of the process chamber environment of carrier, and can realize stable substrate transferring and carry out high-quality processing substrate continuously, and can the corresponding substrate that will maximize continuously from now on, and can corresponding various substrate sizes and have very high versatility.
Substrate board treatment of the present invention, this device comprises, load lock is moved into the carrier that is mounted with substrate; The substrate transfer chamber, have be used for and carrier between the transfer device that shifts; Substrate processing chamber, carry out predetermined processing for substrate, it is characterized in that: possess removable first carrier between above-mentioned load lock and aforesaid substrate transfer chamber, and removable second carrier between aforesaid substrate transfer chamber and aforesaid substrate process chamber, and utilize above-mentioned transfer device, substrate is shifted between above-mentioned first and second carrier.Another feature is: will be mounted with above-mentioned first carrier of treated substrate, and take out of to above-mentioned load lock.
Therefore, for example, can make and when film forming, keep the carrier of substrate not to be exposed in the atmosphere, therefore absorption or suck on the carrier coherent film and be brought into the inhomogeneous or film separation of caused membrane qualities such as moisture in the deposited chamber and significantly reduced in the atmosphere, can with zero defect and uniformly high quality thin film be made in continuously on a plurality of substrates.
Among the present invention, above-mentioned transfer device is to keep each two of platforms and the carrier maintaining body that can change mutually and substrate holding mechanisms by having a plurality of carriers, and can make carrier move institute of travel mechanism constitutor between the maintenance platform of these two carrier maintaining bodies.
Therefore, utilize above-mentioned maintaining body to keep the state that keeps substrate from above-mentioned first and second carrier on the above-mentioned maintenance platform, and carrier is moved between above-mentioned two maintaining bodies, keep under this state with substrate once more mounting on carrier, shifted with substrate.By this structure, even be large substrate, still can carry out speed exactly and shift faster, realize the higher substrate board treatment of productive rate.And, to compare with the transfer method that utilizes robot etc. to be done, it can significantly reduce the device area, can reach the cost of monolith substrate processing unit and significantly cut down.
In addition, as the aforesaid substrate maintaining body, preferably adopt vacuum suction or Electrostatic Absorption mechanism.This maintaining body, owing to can keep substrate by the back side, so not only at large substrate, also can the thin film deposition face that the substrate of multiple size is exempted substrate surface be polluted or scratch, kept exactly, made that carrying out substrate between atmospheric side carrier and inlet side carrier easily and exactly shifts.
And the aforesaid substrate transfer chamber is characterised in that and maintains the dry gas environment, for example adopts N
2Gas.Therefore, the mechanism of substrate transfer device and processing unit is simplified.
In addition, above-mentioned carrier is good with supporting substrate four limits, thus, though substrate maximizes also may command curved substrate and form the uniform film in whole surface.And, during the present invention is specially adapted to form as higher films of moisture absorption such as MgO films.
Substrate processing method using same of the present invention, it is the load lock of taking out of or moving into for the carrier that is used for being mounted with substrate, can between carrier, carry out the substrate transfer chamber that substrate shifts, carry out the substrate processing chamber of predetermined processing for substrate, make its grade link configuration, and dispose in removable first carrier and removable second carrier between aforesaid substrate transfer chamber and substrate processing chamber between above-mentioned load lock and aforesaid substrate transfer chamber, it is characterized in that: in the aforesaid substrate transfer chamber, between above-mentioned first carrier and above-mentioned second carrier, carry out substrate and shift, can avoid being exposed in the atmosphere and carrying out processing substrate continuously to above-mentioned second carrier that above-mentioned substrate processing chamber is taken out of or moved into.
As mentioned above, above-mentioned transfer device is preferably: by having the carrier maintaining body and each two of configuration substrate holding mechanisms thereon that a plurality of carriers keep platform and can intercourse, and can make carrier move institute of travel mechanism constitutor between the retainer of these two carrier maintaining bodies, and utilize above-mentioned maintaining body to keep the state that keeps substrate from above-mentioned first and second carrier on the above-mentioned retainer, and carrier is moved between above-mentioned two maintaining bodies, keep under this state with substrate again mounting on carrier, to carry out the transfer of substrate.
Description of drawings
Fig. 1 is the ideograph of the basic structure example of demonstration substrate board treatment of the present invention.
Fig. 2 is the structural representation that is used for illustrating the MgO film evaporation coating device of PDP.
Fig. 3 is used for illustrating the schematic diagram that substrate shifts.
Fig. 4 is for showing the X-ray diffracting spectrum of the crystalline orientation utilize the MgO film that the present invention forms.
Fig. 5 is the schematic diagram of the structure example of another evaporation coating device of demonstration.
Fig. 6 is the schematic diagram of the structure example of another substrate board treatment of demonstration.
Fig. 7 is the structural representation that is used for illustrating known evaporation coating device.
The chart of Fig. 8 for concerning between expression production sheet number of thin film deposition substrate and the water partial pressure.
Fig. 9 is for showing the X-ray diffracting spectrum of the crystalline orientation utilize the MgO film that known devices forms.
Figure 10 is for showing the schematic diagram that can suppress the known evaporation coating device of moisture effects in the atmosphere.
Symbol description
1,1 ' 2 carrier
3,3 ' substrate
4 conveyance unit
5 substrate transfer devices
6 mechanical arms
10,10 ' load lock
20 substrate transfer chambers
21,22 carrier maintaining bodies
23 substrate holding mechanisms
30 process chambers (deposited chamber)
34 MgO hold siege
35 evaporation mechanisms
40～46 gate valves
50 first ancillary chambers
60 second ancillary chambers
70 first heating chambers
80 second heating chambers
Embodiment
Fig. 1 represents the schematic diagram of the basic structure of substrate board treatment of the present invention.
As shown in Figure 1, substrate board treatment, be to have the structure that load lock 10, substrate transfer chamber 20 and process chamber 30 is connected by gate valve 41,42, first carrier 1 is moved between load lock 10 and substrate transfer chamber 20 and make substrate be able to conveyance, can make second carrier 1 ' move between substrate transfer chamber 20 and process chamber 30 and make substrate be able to conveyance.At this, substrate transfer chamber 20 is maintained at as N
2Dry gas environment or vacuum states such as gas, and substrate transfer device 5 is installed.
In atmosphere, substrate 3 is loaded on first carrier 1, moves into to load lock 10, form after the vacuum (if refer to the N of substrate transfer chamber
2Just fill N during gaseous environment
2After the gas), open gate valve 41, it is transferred in the substrate transfer chamber 20.In substrate transfer chamber 20, utilize substrate transfer device 5, with substrate 3 from first carrier 1 be transferred to second carrier 1 ' on, transfer again be mounted with substrate 3 second carrier 1 ' to process chamber 30, the professional etiquette of going forward side by side is retracted in the substrate transfer chamber 20 after handling surely.In the substrate transfer chamber, treated substrate 3 ' from second carrier 1 ' be transferred on first carrier 1, and first carrier 1 is removed in atmosphere by load lock 10, and for treated substrate 3 ' exchanged with untreatment base 3, is returned in the load lock 10 again.So, it constitutes: second carrier that enters in process chamber 30 does not contact atmosphere, and substrate 3,3 ' all is with the carrier conveyance, even therefore large substrate still can repeat and carry out continuously stable conveyance and processing.
Below, illustrate further the preferred example of the MgO film evaporation coating device of PDP of the present invention with reference to the accompanying drawings.Fig. 2 is for implementing the structural representation about the evaporation coating device of MgO film formation method of the present invention, and Fig. 3 is the schematic diagram that is used for illustrating the substrate transfer method that is carried out in the substrate transfer chamber.In this example, make the conveyance direction of load lock 10, first ancillary chamber 50, substrate transfer chamber 20, second ancillary chamber 60, first heating chamber 70, deposited chamber 30 and conversion carrier, and constituted by second heating chamber 80 that is used for carrying out the substrate heating.Between each chamber, be equipped with gate valve 41 ~ 46.In first and second heating chamber, be equiped with heating arrangements (not icon),, be heated to till the set point of temperature in order to each plate base is heated.
In this example, in load lock 10, first ancillary chamber 50, second ancillary chamber 60, first heating chamber 70 and deposited chamber 30, dispose respectively carrier toward the conveyance unit, top of the right side conveyance of figure and the conveyance unit, bottom of past left side conveyance.Each conveyance unit 4, it suitably adopts and is configured to: for example be disclosed in the row of two on Japanese patent laid-open 9-279341 communique conveyance roller and constitute, and utilize drive system to rotate roller, conveyance is loaded into the carrier on the roller.In addition, in second heating chamber 80, but vertical moving a conveyance unit is installed, utilize this unit, can make carrier move to conveyance path, bottom from conveyance path, top.The vertical movement mechanism of this conveyance unit also suitably adopts the device shown in the Japanese patent laid-open 9-279341 communique, adopts a kind ofly by telescoping tube, and for example cylinder etc. makes the structure of conveyance unit vertical moving.
In addition, in substrate transfer chamber 20, double-deck storehouse has the above-mentioned conveyance unit 4 that is different from the carrier retainer, and about all dispose two groups can the vertical moving structure carrier maintaining body 21,22, and can make carrier 1,1 ' move between the conveyance unit of two carrier maintaining bodies.In addition, as vertical movement mechanism, adopt the mechanism shown in for example above-mentioned Japanese patent laid-open 9-279341 communique.And, on the top wall of substrate transfer chamber 20, be equiped with by the vacuum suction of the substrate holding mechanism that known adsorbing mechanism constituted 23 bestow to(for) substrate.
Bottom wall portion place at deposited chamber 30 is formed with opening, and the plasma source of (for example by the furnaceman of China and foreign countries industry (thigh) manufacturing) and the MgO that is used for accommodating MgO hold siege 34 and be equiped with evaporation mechanism 35 at its underpart place.In addition, the oxygen introducing mechanism is set near peristome, to adjust membrane quality.
Glass substrate (for example for being used for 42 cun TVs) is to be loaded on the carrier of flat-hand position, and gives conveyance by conveyer with level.Below, this transport method is described.Keep the Si Bianchu of substrate, film is formed on the substrate single face and (is downside in this example).
At first, glass substrate 3 is loaded on first carrier 1, moves into to load lock 10.Load lock 10 is vented to regulation air pressure (about 10
-5Pa) till.Afterwards, open gate valve 41, make in first carrier, 1 conveyance to the first ancillary chamber 50.Move into first carrier 1 to first ancillary chamber 50, utilize heating arrangements (not icon) be heated to about 150 ℃ with the processing that outgases.Stop heating, arrived about 10
-4After the Pa, import dry N
2Gas is till the atmospheric pressure.
At this moment, on the conveyance unit, bottom of second ancillary chamber 60, wait for have be mounted with treated substrate 3 ' second carrier 1 ', the indoor N that imported
2Gas.Except that this, the atmospheric abrim N in substrate transfer chamber
2Gas.
The substrate transfer action of being carried out to substrate transfer chamber 20 from this state is described referring to Fig. 3.
Since Fig. 3 (a) state, open gate valve 42, can make 1 conveyance of first carrier to the first carrier maintaining body, the 21 upper strata framves of substrate transfer chamber 20.With respect to this, open gate valve 43, can make be mounted with the substrate 3 of finishing film forming ' second carrier 1 ' Fig. 3 (b) from lower floor's frame of second ancillary chamber, 60 conveyance to the second carrier maintaining bodies 22.
Secondly, in second ancillary chamber 60, being vented to regulation air pressure is about 10
-5After the Pa, open gate valve 44, make in second carrier conveyance to the first heating chamber 70.In first heating chamber 70, utilize heating arrangements (not icon) to be heated to till about 300 ℃.Outgas, air pressure reaches till about 10-3Pa again.Afterwards, open gate valve 45, can make second carrier be transferred to second heating chamber 80, it is heated the stipulated time through behind the deposited chamber 30.In second heating chamber 80, be mounted with the conveyance unit 4 of carrier, for example utilize that the vertical movement mechanism shown in the Japanese patent laid-open 9-979341 communique is lowered by, make and open gate valve 46 once again, second carrier is moved into to deposited chamber 30 toward moving with moving into the direction rightabout.
About the substrate heating, be not limited to the foregoing description, also can in the load lock 10 or second ancillary chamber, carry out.
In deposited chamber 30, for be loaded into second carrier 1 ' on substrate 3 on deposit the MgO film with the regulation formation condition.That is, in deposited chamber, import 80sccm oxygen, and import Ar gas till the air pressure 0.1Pa, activate plasma (plasma) vapor deposition source again, make for deposition MgO film on the substrate.
Afterwards, second carrier 1 ' be transferred to substrate transfer chamber 20 through first heating chamber 70, second ancillary chamber 60 as above-mentioned, carry out substrate and shifts between first and second carrier.
Be loaded into treated substrate 3 on first carrier 1 ', through first ancillary chamber 50 again conveyance to load lock 10.After importing atmosphere, first carrier is removed in atmosphere, reclaim treated substrate 3 ', and untreatment base 3 is loaded on first carrier 1 once again.
As mentioned above, the MgO film can be deposited on the substrate continuously.Because second carrier 1 ' can not contact with atmosphere is difficult for film separation and flawless MgO film so can stably form.In addition, the X-ray diffraction pattern of resulting MgO film, even film forming repeats 3000 times, still present as shown in Figure 4 mainly have (111) crystal plane person, can continue to make the high-performance PDP of no brightness irregularities.With reference to, B, A and C are that expression is determined at substrate center and from the diffracting spectrum at substrate ora terminalis 3cm place.
The apparatus structure of Fig. 1 though for to have only the structure of moving into, taking out of of carrying out carrier in the load lock, also can adopt two load lock of installing, is moved into and the structure of taking out of from opposite side from a side.Fig. 5 is a routine device of this structure of expression.In Fig. 5 device, dispose in process chamber 30 both sides substrate transfer chamber 20,20 ', and load lock 10,10 ', and dispose two group of first carrier 1 and second carrier 1 ', this two group of first carrier 1, removable between the first substrate transfer chamber 20 and first load lock 10 and atmosphere, and move between the second substrate transfer chamber 20 and second load lock 10 and atmosphere, and this second carrier 1 ' removable the first substrate transfer chamber 20, process chamber 30 and the second substrate transfer chamber 20 ' between.
In addition, among the present invention,, and circulate in amount vector in the substrate board treatment simultaneously about the quantity of the process chamber of substrate board treatment, ancillary chamber and configuration etc., can be suitably selected according to the production cycle in each chamber for example.
In addition, in this example, though adopt the substrate holding mechanism of vacuum suction mechanism, also can adopt as known Electrostatic Absorption mechanism or be disclosed in the mechanical type maintaining body of the maintenance substrate end edge portion of Japanese patent laid-open 9-279341 communique as the substrate transfer chamber.In addition, the substrate transfer device is not limited to said mechanism, also can become: for example, two substrate holding mechanisms are located around being installed on rotating shaft, keep after the substrate of first and second carrier, make its Rotate 180 °, keep this state and substrate is loaded into structure on the carrier.In addition, also can become the structure that utilizes robot to shift.And, though above-mentionedly be illustrated with situations such as horizontal conveyance, transfers, be not limited thereto at substrate, also can become the structure of substrate with vertical conveyance, transfer and processing.
Though at becoming row mode evaporation coating device to be illustrated, the present invention is also applicable in the clustered evaporation coating device, as shown in Figure 6 in the above-mentioned example.At this moment, first carrier 1 is to move between load lock 10 and substrate transfer chamber 20, second carrier 1 ' then move substrate transfer chamber 20 and process chamber 30 (30 ', between 30 ").In the transfer chamber, utilize as possess the substrate of two mechanical arms, 6 first and second carriers of transfer.
In addition, as mentioned above, the present invention is not limited to evaporation coating device, except applicable to for example the device that can be used as exposure used Cr oxide-film with blank light shield that utilizes sputtering method to make, also can be applicable in the various processing unit such as etch processes.
By as seen above-mentioned, according to the present invention, can reduce the pollution problem that is taken place in the substrate transferring of prior art, can stably form the quality good film, particularly can provide a kind of and can make the device that has hygroscopic dielectric film as magnesium oxide etc. at a high speed.
Claims (9)
1. substrate board treatment, this device comprises, load lock is moved into the carrier that is mounted with substrate; The substrate transfer chamber, have be used for and carrier between the transfer device that shifts; Substrate processing chamber carries out predetermined processing for substrate, it is characterized in that:
Possesses between above-mentioned load lock and substrate transfer chamber movably first carrier, and between aforesaid substrate transfer chamber and substrate processing chamber second carrier movably, and utilize above-mentioned transfer device, substrate is shifted between above-mentioned first and second carrier.
2. substrate board treatment according to claim 1 is characterized in that: above-mentioned first carrier that will be mounted with treated substrate is taken out of to load lock.
3. substrate board treatment according to claim 1 and 2, it is characterized in that: above-mentioned transfer device, be to keep platform by having a plurality of carriers, and each two of the carrier maintaining body that can intercourse and substrate holding mechanisms, and the travel mechanism that carrier is moved between the maintenance platform of these two carrier maintaining bodies constitutes.
4. according to each described substrate board treatment in the claim 1 to 3, it is characterized in that: the aforesaid substrate maintaining body is to adopt vacuum suction or Electrostatic Absorption mechanism.
5. according to each described substrate board treatment in the claim 1 to 3, it is characterized in that: the aforesaid substrate transfer chamber maintains the dry gas environment.
6. according to each described substrate board treatment in the claim 1 to 5, it is characterized in that: above-mentioned carrier is four limits of supporting substrate.
7. according to each described substrate board treatment in the claim 1 to 6, it is characterized in that: above-mentioned film is the MgO film.
8. substrate processing method using same, it is characterized in that: the load lock that will take out of or move into for the carrier that is used for being mounted with substrate, can between carrier, carry out substrate transfer chamber that substrate shifts, the predetermined processing of substrate processing chamber etc. carry out to(for) substrate links configuration, and dispose in removable first carrier and removable second carrier between aforesaid substrate transfer chamber and substrate processing chamber between above-mentioned load lock and aforesaid substrate transfer chamber
In the aforesaid substrate transfer chamber, between above-mentioned first carrier and above-mentioned second carrier, carry out substrate and shift, can avoid being exposed in the atmosphere and carrying out processing substrate continuously to above-mentioned second carrier that above-mentioned substrate processing chamber is taken out of or moved into.
9. substrate processing method using same according to claim 8, it is characterized in that: above-mentioned transfer device, be by having each two of a plurality of carriers maintenance platforms and the carrier maintaining body that can exchange mutually and substrate holding mechanisms, and the travel mechanism that carrier is moved between the maintenance platform of these two carrier maintaining bodies constitutes, and utilize above-mentioned maintaining body to keep the state that keeps substrate from above-mentioned first and second carrier on the above-mentioned maintenance platform, and carrier is moved between above-mentioned two maintaining bodies, keep again this state infrabasal plate again mounting on carrier, to carry out the transfer of substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP148690/2002 | 2002-05-23 | ||
| JP2002148690 | 2002-05-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1650416A true CN1650416A (en) | 2005-08-03 |
| CN1293621C CN1293621C (en) | 2007-01-03 |
Family
ID=29561191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038099241A Expired - Lifetime CN1293621C (en) | 2002-05-23 | 2003-05-23 | Substrate processing device and substrate processing method |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP4369866B2 (en) |
| KR (1) | KR100951337B1 (en) |
| CN (1) | CN1293621C (en) |
| AU (1) | AU2003242422A1 (en) |
| TW (1) | TWI232242B (en) |
| WO (1) | WO2003100848A1 (en) |
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- 2003-05-23 KR KR1020047014556A patent/KR100951337B1/en active IP Right Grant
- 2003-05-23 AU AU2003242422A patent/AU2003242422A1/en not_active Abandoned
- 2003-05-23 TW TW092113979A patent/TWI232242B/en not_active IP Right Cessation
- 2003-05-23 CN CNB038099241A patent/CN1293621C/en not_active Expired - Lifetime
- 2003-05-23 WO PCT/JP2003/006454 patent/WO2003100848A1/en active Application Filing
- 2003-05-23 JP JP2004508403A patent/JP4369866B2/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| TW200403351A (en) | 2004-03-01 |
| AU2003242422A1 (en) | 2003-12-12 |
| JP4369866B2 (en) | 2009-11-25 |
| TWI232242B (en) | 2005-05-11 |
| CN1293621C (en) | 2007-01-03 |
| JPWO2003100848A1 (en) | 2005-09-29 |
| KR100951337B1 (en) | 2010-04-08 |
| WO2003100848A1 (en) | 2003-12-04 |
| KR20050002862A (en) | 2005-01-10 |
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