CN1619328A - Semiconductor device and testing method thereof - Google Patents
Semiconductor device and testing method thereof Download PDFInfo
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- CN1619328A CN1619328A CNA2004100922532A CN200410092253A CN1619328A CN 1619328 A CN1619328 A CN 1619328A CN A2004100922532 A CNA2004100922532 A CN A2004100922532A CN 200410092253 A CN200410092253 A CN 200410092253A CN 1619328 A CN1619328 A CN 1619328A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0038—Circuits for comparing several input signals and for indicating the result of this comparison, e.g. equal, different, greater, smaller (comparing pulses or pulse trains according to amplitude)
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/10—Measuring sum, difference or ratio
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3696—Generation of voltages supplied to electrode drivers
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Tests Of Electronic Circuits (AREA)
- Liquid Crystal (AREA)
Abstract
A semiconductor device according to the present invention has a liquid crystal driver circuit, and when gray-scale voltage thereof is tested, the gray-scale voltage (Vx) generated in a gray-scale voltage generator circuit provided therein is compared with reference voltage (e.g., Vx+DeltaV) generated for testing the gray-scale voltage and the test result is output as binarized voltage from external terminals of the semiconductor device. This can speed up the gray-scale voltage test even in the case of higher gray scale in the liquid crystal driver circuit or increased number of output terminals of the semiconductor device. Therefore, it becomes possible to reduce the time and cost required for the test.
Description
Technical field
[0001]
The present invention relates to possess the semiconductor device and the method for testing thereof of the driving circuit of LCD, particularly relate to semiconductor device with a plurality of outside terminals (lead-out terminal) and the method for testing of testing its output voltage.
Background technology
[0002]
The semiconductor device that possesses the driving circuit (liquid crystal display drive circuit is also referred to as lcd driver) of LCD drives LCD (liquid crystal panel) from a plurality of outside terminals (output pin) output multistage (many gray scales) voltage.
[0003]
In the past, possess the grayscale voltage test of the semiconductor device of liquid crystal display drive circuit, the voltage determination (aanalogvoltage mensuration) by the use test machine carries out.
[0004]
Yet, be accompanied by the increase of the semiconductor device lead-out terminal that the high precision int of LCD in recent years causes and the high gray processing of LCD, produce grayscale voltage and test needed time increase, increase the such problem of cost of the test or the manufacturing of this semiconductor device (liquid crystal display drive circuit).
[0005]
Open in the 2[002-156412 communique the spy, method as the high speed of seeking the grayscale voltage test, recorded and narrated the differential voltage between the reference voltage of the lead-out terminal voltage that detects liquid crystal display drive circuit and test machine, the technology of dispersiveness between the terminal of grayscale voltage in each lead-out terminal of test liquid crystal display drive circuit.
[0006]
But, have following problem in the technology of in above-mentioned patent documentation 1, recording and narrating.
[0007]
(1) owing to the mensuration (aanalogvoltage mensuration) of carrying out output voltage with test machine, therefore need spend certain hour, thereby increase the test duration up to output voltage stabilization.
[0008]
(2) be accompanied by because the miniaturization of the grayscale voltage step pitch that the high gray processing of LCD causes, under the very narrow situation of the judgement scope of output voltage, differential voltage between the lead-out terminal voltage of needs segmentation liquid crystal display drive circuit and the reference voltage of tester, thus the test duration increased.
[0009]
(3) technology in order to realize recording and narrating in the patent documentation 1 needs the new grayscale voltage metering circuit of adding for test machine, can not use existing test machine.
Summary of the invention
[0010]
The objective of the invention is to solve the above problems, provide the grayscale voltage of the semiconductor device that shortens the driving circuit possess LCD to test the technology of needed time.In addition, purpose is to provide the test of the semiconductor device that can reduce the driving circuit that possesses LCD and the technology of manufacturing cost.
[0011]
In the disclosed invention of the application, if briefly bright representational summary then as follows.
[0012]
In order to achieve the above object, the semiconductor device feature with liquid crystal display drive circuit of the present invention be when grayscale voltage is tested the output binaryzation the grayscale voltage test signal.
[0013]
For example, the present invention is the semiconductor device with liquid crystal display drive circuit, feature is when the grayscale voltage test of above-mentioned semiconductor device, grayscale voltage generative circuit by above-mentioned semiconductor device grayscale voltage that generates and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared, above-mentioned test result is exported from the outside terminal of above-mentioned semiconductor device as two threshold voltages.
[0014]
In addition, the present invention is the semiconductor device with liquid crystal display drive circuit, feature is that above-mentioned liquid crystal display drive circuit has the grayscale voltage generative circuit and receives by the gray-scale voltage selection of above-mentioned grayscale voltage generative circuit generation and the gray-scale voltage selection circuit of the corresponding grayscale voltage of gray scale, when the grayscale voltage test of above-mentioned semiconductor device, in above-mentioned gray-scale voltage selection circuit, grayscale voltage that is generated by above-mentioned grayscale voltage generative circuit and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared, above-mentioned test result is exported from the outside terminal of above-mentioned semiconductor device as two threshold voltages.
[0015]
In addition, the present invention is the semiconductor device with liquid crystal display drive circuit, it is characterized in that: above-mentioned liquid crystal display drive circuit has the grayscale voltage generative circuit; The grayscale voltage that reception is generated by above-mentioned grayscale voltage generative circuit is also selected the gray-scale voltage selection circuit of the grayscale voltage corresponding with gray scale; The temporary transient maintenance and the relevant information of selecting by above-mentioned gray-scale voltage selection circuit of grayscale voltage, the information of above-mentioned maintenance is offered the impact damper of above-mentioned gray-scale voltage selection circuit, wherein, above-mentioned gray-scale voltage selection circuit has: according to the output of above-mentioned impact damper, select the selector circuit of the grayscale voltage that generated by above-mentioned grayscale voltage generative circuit; When the grayscale voltage test of above-mentioned semiconductor device, grayscale voltage of being selected by above-mentioned selector circuit and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared, the potential difference of the two is amplified the amplifying circuit of also above-mentioned comparative result being exported from outside terminal as two threshold voltages; And, select the selecting arrangement of the output of above-mentioned comparative voltage or above-mentioned amplifying circuit as the information that is input in the above-mentioned amplifying circuit.
[0016]
In addition, the present invention is the method for testing with semiconductor device of liquid crystal display drive circuit, feature is when the grayscale voltage test of above-mentioned semiconductor device, grayscale voltage generative circuit by above-mentioned semiconductor device grayscale voltage that generates and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared, use two threshold voltages of exporting from the outside terminal of above-mentioned semiconductor device as above-mentioned test result to carry out the test of the grayscale voltage of above-mentioned semiconductor device.
[0017]
In addition, the present invention is the method for testing with semiconductor device of liquid crystal display drive circuit, feature is that above-mentioned liquid crystal display drive circuit has grayscale voltage generative circuit and the gray-scale voltage selection circuit that receives the grayscale voltage that is generated by above-mentioned grayscale voltage generative circuit, in above-mentioned gray-scale voltage selection circuit, grayscale voltage that is generated by above-mentioned grayscale voltage generative circuit and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared, use two threshold voltages of exporting from above-mentioned semiconductor device as above-mentioned test result to carry out the test of the grayscale voltage of above-mentioned semiconductor device.
[0018]
In addition, the feature of the method for testing of semiconductor device is when the test of above-mentioned grayscale voltage, the outside terminal of above-mentioned semiconductor device is electrically connected with the comparer of test machine, uses from two threshold voltages of said external terminal output, carries out the gray scale test in the comparer of above-mentioned tester together.
[0019]
If according to the present invention, then can shorten the grayscale voltage test duration of the semiconductor device of the driving circuit (liquid crystal display drive circuit) that possesses LCD.
[0020]
In addition, can reduce the test and the manufacturing cost of the semiconductor device of the driving circuit that possesses LCD.
Description of drawings
Fig. 1 is the structural drawing that one example of the semiconductor device with liquid crystal display drive circuit of the invention process form is shown;
Fig. 2 illustrates the structure of the semiconductor device with liquid crystal display drive circuit of the invention process form 1;
Fig. 3 is illustrated in the structure example of the on-off circuit that is provided with in the semiconductor device of the invention process form 1;
Fig. 4 illustrates the treatment scheme of method of testing of the semiconductor device with liquid crystal display drive circuit of the invention process form;
Fig. 5 illustrates the structure of the semiconductor device with liquid crystal display drive circuit of the invention process form 2;
Fig. 6 illustrates the circuit structure of comparative voltage generative circuit of semiconductor device of the invention process form 2 and an example of action thereof; And
Fig. 7 illustrates the grayscale voltage of the invention process form and an example of the relation between the gray scale.
Embodiment
[0021]
Below, explain example of the present invention with reference to the accompanying drawings.In addition, at the institute's drawings attached that is used for illustrating example, have the identical symbol of mark on the parts of identical function, and omitting the explanation of its repetition.
[0022]
Fig. 1 illustrates the example of structure of the semiconductor device of the liquid crystal display drive circuit with the invention process form.In the structure example of this semiconductor device, possess gate driver 1, Source drive 2, liquid crystal drive voltage generation circuit 3, liquid crystal panel 5 and MPU6 etc.
[0023]
[0024]
" semiconductor device that possesses the driving circuit (liquid crystal display drive circuit) of LCD " that in the example of the present invention of following narration, illustrates have situation that (1) constitute with Source drive 2 and (2) constitute have gate driver 1, the situation of Source drive 2 and liquid crystal drive voltage generation circuit 3.
[0025]
Under the situation of the semiconductor device of said structure (2), sometimes also comprising that the part of gate driver 1, Source drive 2 and liquid crystal drive voltage generation circuit 3 calls LCD controller 4.And then, remove beyond the each part mentioned above, constitute a semiconductor device in can also being also included within MPU6.
[0026]
The semiconductor device of said structure (1) mainly uses when driving large-scale LCD, and the semiconductor device of said structure (2) for example uses when portable telephone etc. possesses small sized colour TFT LCD etc. driving.
[0027]
Among Fig. 1, LCD controller 4 is connected on the liquid crystal panel 5 that has disposed TFT rectangularly.And, LCD controller 4 is by applying the signal of selecting any display line from gate driver 1 for this liquid crystal panel 5, and apply gray scale voltage output for each pixel of selected display line from Source drive 2, carry out charging, thereby control the briliancy of each pixel as the maintenance electric capacity of object pixel.In addition, LCD controller 4 is connected to the computing of action of control gate driver 1 and Source drive 2 and the MPU6 of processing.
[0028]
Below, the semiconductor device that possesses liquid crystal display drive circuit and the method for testing thereof of the invention process form sequentially are described with reference to Fig. 1～Fig. 7.
[0029]
(example 1)
Fig. 2 illustrates the structure of the semiconductor device with liquid crystal display drive circuit of the invention process form 1.Fig. 2 is as example 1 of the present invention, and the situation (corresponding with the structure of above-mentioned (1)) that semiconductor device with liquid crystal display drive circuit constitutes with Source drive is shown.That is, the liquid crystal display drive circuit in the semiconductor device of example 1 is a Source drive 2 shown in Figure 1.
[0030]
Among Fig. 2, this Source drive 2 constitutes to have: to carry out the video data RAM12 that data that data write or read are stored through external interface; Keep being written to the line buffer 13 of the data among this video data RAM12; Generate the grayscale voltage generative circuit 16 of the grayscale voltage of predetermined level; According to the predetermined gray voltage that generates by this grayscale voltage generative circuit 16, the gray-scale voltage selection circuit 14 of coming output gray level voltage according to the gray scale setting data that remains in the line buffer 13; The test pattern commutation circuit 21 of the pattern when testing with gray scale when switching action usually.
[0031]
In addition, the S1～Sn shown in Fig. 2 is a plurality of lead-out terminals (output pin) that the semiconductor device of example 1 has, output gray level voltage when moving usually.In addition, the VTEST shown in the figure is used for the grayscale voltage test in gray scale when test and terminal that the comparative voltage that generates is provided with in order to import (applying).Test machine 35 is the equipment that is used to carry out for the gray scale test of this semiconductor device, possesses comparative voltage configuration part and a plurality of comparator C MP1～CMPn etc., can be electrically connected to the lead-out terminal of this semiconductor device.
[0032]
Gray-scale voltage selection circuit 14 constitutes and comprises a plurality of on-off circuits 15 that have selector circuit 18, amplifying circuit 20 and action change-over switch 19 and constitute.
[0033]
In addition, can under unwanted situation, omit video data RAM12 and constitute semiconductor device.
[0034]
This Source drive 2 by test pattern commutation circuit 21 control action change-over switches 19, makes the lead-out terminal of amplifying circuit 20 be connected to the reversed input terminal of usefulness "-" symbolic representation when moving usually.Thus, amplifying circuit 20 becomes the operating state equal with buffer circuits, and the grayscale voltage of selecting through selector circuit 18 is outputed to lead-out terminal.
[0035]
On the other hand, this Source drive 2 is when gray scale is tested, the lead-out terminal and the VTEST terminal of the external interface of not shown display controller, gray-scale voltage selection circuit 14 (on-off circuit 15) are connected respectively to test machine 35, according to carry out the gray scale test from the test signal of this test machine 35.
[0036]
Specifically, (gray scale test pattern when gray scale is tested, test pattern), Source drive 2 change action change-over switches 19 make the reversed input terminal of VTEST terminal with usefulness "-" symbolic representation of amplifying circuit 20 to be connected through test pattern commutation circuit 21 from test machine 35.And, in amplifying circuit 20, grayscale voltage of selecting through selector circuit 18 and the comparative voltage that applies through the VTEST terminal are compared, comparative result is outputed to lead-out terminal.
[0037]
Usually, because amplifying circuit 20 is high powers, therefore, by amplifying circuit 20 potential difference between grayscale voltage and the comparative voltage is amplified when gray scale is tested, near the magnitude of voltage just (H) of output buffer circuit or negative (L) supply voltage is as lead-out terminal voltage.
[0038]
Thereby, when gray scale is tested, set gradation data arbitrarily from test machine 35 through video data RAM12 and line buffer 13, and in test machine 35, applying comparative voltage by the VTEST terminal, the output voltage of Source drive 2 becomes some in the two predetermined threshold voltages (" H " or " L ").Because the output of gray scale test signal is two threshold voltages, therefore among a plurality of comparator C MP1～CMPn that in tester 35, is provided with, the grayscale voltage of a plurality of lead-out terminals (output pin) of test source driver 2 simultaneously.
[0038a]
Fig. 3 is illustrated in a structure example of a plurality of on-off circuits 15 that are provided with in the above-mentioned gray-scale voltage selection circuit 14.Among Fig. 3, on-off circuit 15 comprises: the amplifying circuit 20 with transistor 101a～101i; The action change-over switch 19 that constitutes by transparent switch with transistor 102a, 102b and transistor 103a, 103b; And selection is by the selector circuit 18 of the grayscale voltage of grayscale voltage generative circuit 16 (not illustrating among Fig. 3) generation.In addition, be connected with the bias voltage generative circuit 105 and the test pattern commutation circuit 21 of needed voltage level in the action that is created on amplifying circuit 20 on this on-off circuit 15 respectively.This test pattern commutation circuit 21 possesses and the high above-mentioned action change-over switch 19 usefulness operation voltages of operation voltage than its low logical circuit (for example is used for, internal logic circuit does not illustrate in Fig. 3) the Counter rotating door circuit 104a that controls and with the Counter rotating door circuit 104b of operation voltage (high voltage) action of action change-over switch 19 with level locomotive function.The output terminal Vout of amplifying circuit 20 be connected to semiconductor device of the present invention lead-out terminal (any of lead-out terminal S1～Sn shown in Figure 2) and the action change-over switch 19 terminal A on.In addition, the voltage of supplying with from test machine 35 through terminal VTEST (with reference to Fig. 2) or supply with from the comparative voltage generative circuit 22 that reference Fig. 5 narrate example 2 as a comparison voltage Vcomp be applied to and move on the terminal B of change-over switch 19.
[0038b]
Below, the action summary of on-off circuit shown in Figure 3 15 is described.When moving usually, by the logic state of test pattern commutation circuit 21 is changed to " 0 ", the transparent switch that constitutes with transistor 102a, 102b becomes the OFF state, and the transparent switch that constitutes with transistor 103a, 103b becomes the ON state.Thus, the output terminal Vout of amplifying circuit 20 process action change-over switch 19 is connected to the transistor 101d (its grid) into the anti-phase input of this amplifying circuit 20.Its result, amplifying circuit 20 is that about 1 times buffer circuit moves as voltage amplification degree, and the identical voltage of the grayscale voltage of selecting with selector circuit 18 is through the lead-out terminal output from the semiconductor device of the invention described above of the output terminal Vout of this amplifying circuit 20.
[0038c]
On the other hand, the gray scale test period at this semiconductor device is taken as " 1 " to the logic state of test pattern commutation circuit 21.Thus, the transparent switch that constitutes with transistor 102a, 102b switches to the ON state, the transparent switch that constitutes with transistor 103a, 103b switches to the OFF state, is applied to the grid of above-mentioned transistor 101d through action change-over switch 19 from the above-mentioned comparative voltage Vcomp of test machine 35 or 22 supplies of comparative voltage output circuit.Its result, height when the voltage amplification degree ratio of amplifying circuit 20 moves test pattern commutation circuit 21 usually moves as the amplifying circuit of so-called high power.Thereby, amplifying circuit 20 amplifies grayscale voltage of being selected by selector circuit 18 and the difference (potential difference) between the comparative voltage Vcomp with above-mentioned voltage amplification degree, when the level of this grayscale voltage is higher than comparative voltage Vcomp, from the side's supply voltage Vdd or near the voltage it of this output terminal Vout output amplifier 20.In addition, when the level of above-mentioned grayscale voltage is lower than comparative voltage Vcomp, from the opposing party's supply voltage Vss of the output terminal Vout output amplifier 20 of amplifying circuit 20 or near the voltage it.
[0038d]
Abovely with reference to Fig. 3 an example of on-off circuit 15 has been described, and in the enforcement of semiconductor device of the present invention, on-off circuit 15 or its equivalent circuit are not limited to above-mentioned structure, this point is very clear and definite.For example, can be being replaced into ambipolar transistor (in this case as part or all of the illustrative transistor 101a～101i of field effect transistor, 102a, 102b, 103a and 103b among Fig. 3, the grid of above-mentioned transistor 101d replaces with base stage), can also be constructed such that at the inner above-mentioned logical circuits of installing of test pattern commutation circuit 21 and move according to the operation voltage identical or similar with action change-over switch 19.Thereby, when the method for testing of implementing semiconductor device of the present invention or manufacture method, being not limited to the structure of above-mentioned switch 15 certainly, this point is very clear and definite.
[0039]
Secondly, Fig. 4 illustrates semiconductor device with liquid crystal display drive circuit and the relevant treatment scheme of method of testing thereof with the invention process form.At first, Source drive 2 is set at above-mentioned gray scale test pattern (S2), then, in line buffer 13, sets the gray scale setting data, make and select grayscale voltage Vx (S3) by selector circuit 18.Then, apply the comparative voltage (S4) that magnitude of voltage is (Vx-Δ V) at the VTEST terminal,, in test machine 35, carry out compare to determine (S5) with expected value for the lead-out terminal voltage of Source drive 2 from test machine 35.
[0040]
In this output voltage is judged, if Source drive 2 is normal, then the potential difference (PD) between the input terminal of amplifying circuit 20 is+Δ V, export the voltage that is equivalent to " H " in the lead-out terminal voltage of Source drive 2, this value compares judgement (S5-output voltage " H ") with expected value in test machine 35.When being " L ", become FAIL (denying) (S10) for the result of this lead-out terminal at output voltage.
[0041]
Then, apply the comparative voltage (S6) that magnitude of voltage is (Vx+ Δ V) at the VTEST terminal,, in test machine 35, carry out compare to determine (S7) with expected value for the lead-out terminal voltage of Source drive 2 from test machine 35.
[0042]
In this output voltage is judged, if Source drive 2 is normal, then the potential difference (PD) between the input terminal of amplifying circuit 20 is-Δ V, export the voltage that is equivalent to " L " in the lead-out terminal voltage of Source drive 2, this value compares judgement (S7-output voltage " L " with expected value in test machine 35.)。When output voltage is " H ", become FAIL (denying) (S10) for the result of this lead-out terminal
[0043]
Through the treatment step of S3～S7,, comparative voltage as (Vx ± Δ V), is carried out grayscale voltage is in test in the predetermined voltage range by the grayscale voltage Vx that selects in inside for Source drive 2.If normal, then the result for lead-out terminal becomes PASS (very) (S9).
[0044]
And then, when the grayscale voltage value Vx ' for other tests, use its grayscale voltage value can similarly carry out the treatment step of S3～S7 repeatedly, this point is very clear and definite (S8).In addition, here in order to describe comparative voltage, test and can set arbitrarily voltage range certainly as (Vx ± Δ V).
[0045]
In addition, LCD has the rising for input voltage, show the characteristic that the briliancy curve rises, to this, when in liquid crystal display drive circuit, the relation of grayscale voltage Vx and gray scale setting value being made as shown in Figure 7 nonlinear characteristic, in this example, match with the relation of grayscale voltage Vx and gray scale setting value, can make Δ V for the size of selected grayscale voltage Vx according to the gray scale set point change.That is, among Fig. 7 with in the zone shown in A or the C, because grayscale voltage Vx is big for the variation (slope) of gray scale setting value, therefore, Δ V also sets more coarsely, and is little for the variation (slope) of gray scale setting value owing to grayscale voltage Vx in the zone shown in the B, so Δ V sets carefully.Thus, the gray scale test that the feature with LCD matches can be carried out, the precision of grayscale voltage test can be improved.
[0046]
In addition, Fig. 2 illustrates gray scale testing principle of the present invention, in order to further specify, illustrate the structure of the VTEST terminal that comparative voltage input usefulness is set, and this structure also can be and for example become the structure that untapped other terminal switching is used when gray scale is tested.
[0047]
In addition, employing is provided with the structure of a plurality of comparative voltages configuration part in test machine 35, the structure of a plurality of comparative voltage input terminals suitable with the VTEST terminal perhaps is set, can in each of a plurality of on-off circuits 15, apply different comparative voltages, can in each on-off circuit (each lead-out terminal), carry out different gray scale tests.
[0048]
For example, in the group of certain lead-out terminal, apply (Vx+ Δ V), in other the group of lead-out terminal, apply under the situation of (Vx-Δ V), become " H " from the output of Source drive 2 and mix the state that exists with " L ".If use like this, then on the lead-out terminal of odd number, apply (Vx+ Δ V), under the situation that applies (Vx-Δ V) on the lead-out terminal of even number, from alternatively output " H " and " L " of lead-out terminal (if normal).Thus, the short-circuit detecting between the lead-out terminal can be carried out, the reliability of gray scale test can be improved.
[0049]
In addition, can also be in the group of certain lead-out terminal, to apply (Vx+ Δ V1), in the group of other lead-out terminal, apply (Vx+ Δ V2), perhaps, in the group of certain lead-out terminal, apply (Vx1+ Δ V), in the group of other lead-out terminal, apply (Vx2+ Δ V) etc., apply the method for testing and the structure of the comparative voltage of different magnitudes of voltage.
[0050]
In addition, the present invention only is defined in gray scale test as described above, by the combination of gray scale setting data and comparative voltage, can also use in the functional test of for example LCD controller, and this point is very clear and definite.
[0051]
(example 2)
Then, the semiconductor device with liquid crystal display drive circuit as the invention process form 2 is described, an example of structure when being provided with the comparative voltage generative circuit and action thereof in the inside of display controller.Fig. 5 is as example 2 of the present invention, the structure of semiconductor device of comparative voltage generative circuit (the comparative voltage generative circuit 22 among the figure) that has been illustrated in the display controller inner facility.
[0052]
The liquid crystal display drive circuit of the semiconductor device of example 2 for example is suitable for for Source drive shown in Figure 12.
[0053]
The LCD controller 4 that comprises this Source drive 2 constitutes to be had: to carry out the video data RAM12 that data that data write or read are stored through external interface; Keep being written to the line buffer 13 of the data among this video data RAM12; Generate the grayscale voltage generative circuit 16 of the grayscale voltage of predetermined level; According to the predetermined gray voltage that generates by this grayscale voltage generative circuit 16, according to the gray-scale voltage selection circuit 14 that remains on the gray scale setting data output gray level voltage in the line buffer 13; The test pattern commutation circuit 21 of the pattern when testing with gray scale when switching action usually; Generate the comparative voltage generative circuit 22 of comparative voltage according to the grayscale voltage that generates by grayscale voltage generative circuit 16.
[0054]
In gray-scale voltage selection circuit 14, comprise a plurality of on-off circuits 15 that constitute by selector circuit 18, amplifying circuit 20 and action change-over switch 19.
[0055]
This Source drive 2 carries out the identical action of Source drive with the example 1 that illustrated with reference to Fig. 2 when moving usually.On the other hand, this Source drive 2 is when gray scale is tested, change action change-over switch 19, the comparative voltage that is generated by comparative voltage generative circuit 22 is applied to the reversed input terminal of usefulness "-" symbolic representation of amplifying circuit 20, in amplifying circuit 20, grayscale voltage and the comparative voltage selected through selector circuit 18 are compared, comparative result is outputed to lead-out terminal.
[0056]
Usually, because amplifying circuit 20 is high powers, therefore when gray scale was tested, amplifying circuit 20 amplified the potential difference between grayscale voltage and the comparative voltage, near the magnitude of voltage just (H) of lead-out terminal voltage output buffer or negative (L) supply voltage.
[0057]
In example 2,, can further shorten the test duration owing to, therefore can relatively implement the gray scale test in circuit inside at the inner comparative voltage that generates the gray scale test of the circuit of Source drive 2.That is, in example 2, because therefore the problem that does not exist the comparative voltage that takes place when the outside of the semiconductor device of the sort of structure of Fig. 1 applies comparative voltage to rise can further shorten the test duration.
[0058]
In addition, the precision for the grayscale voltage that improves Source drive 2 is tested though do not illustrate, also can constitute the enough test machines 35 of energy be determined at generation in the Source drive 2 through the VTEST terminal voltages comparative voltage in Fig. 5.
[0059]
Secondly, use Fig. 6 that a circuit structure of comparative voltage generative circuit 22 of semiconductor device of this example 2 and an example of action thereof are described.Fig. 6 illustrates the detailed structure of comparative voltage generative circuit 22.
[0060]
The comparative voltage generative circuit 22 of this example 2 comprises: according to the grayscale voltage that generates in grayscale voltage generative circuit 16, generate the comparative voltage resistance 23 for the comparative voltage of each grayscale voltage; The a plurality of buffer circuits 24 that each branch pressure voltage of comparative voltage resistance 23 amplified with 1 times magnification; Switch the output of buffer circuit 24, voltage is connected to a plurality of switches 25 of gray-scale voltage selection circuit 14 as a comparison; Carry out the decoding scheme 26 of the ON/OFF control of a plurality of switches 25 according to gray scale setting data and comparative voltage switching signal.
[0061]
In the gray scale setting data of importing as the control of decoding scheme 26, set with gray-scale voltage selection circuit 14 in the identical data of gray scale setting data of setting, as shown in Figure 6, at grayscale voltage is under the situation of V (x), according to the comparative voltage switching signal, voltage output V (x) ± Δ V's is some as a comparison.In the following table of Fig. 6, gathered the action of comparative voltage generative circuit 22.Here, the step set of 1/0 of the comparative voltage switching signal comparative voltage that switches S4 in the treatment scheme be equivalent to gray scale test shown in Figure 4 or S6.
Though more than illustrate and described several embodiments of the present invention, but will be appreciated that the present invention is not limited to the foregoing description, just as what know in the conventional art, allow numerous variations and correction, and, inventors are limited to details shown here and that record and narrate, but will comprise all such changes and correction that scope comprised by additional claim.
Claims (21)
1. have the semiconductor device of liquid crystal display drive circuit, it is characterized in that:
When the grayscale voltage test of above-mentioned semiconductor device, grayscale voltage generative circuit by above-mentioned semiconductor device grayscale voltage that generates and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared, above-mentioned test result is exported from the outside terminal of above-mentioned semiconductor device as two threshold voltages.
2. semiconductor device according to claim 1 is characterized in that:
The test voltage of above-mentioned grayscale voltage is the voltage that sets in the outside of above-mentioned semiconductor device.
3. semiconductor device according to claim 2 is characterized in that:
Has the terminal that is used to import the voltage that sets in the outside of above-mentioned semiconductor device.
4. semiconductor device according to claim 2 is characterized in that:
Some usefulness in the lead-out terminal of above-mentioned semiconductor device is acted on the terminal of the voltage that input sets in the outside of above-mentioned semiconductor device.
5. semiconductor device according to claim 1 is characterized in that:
The test voltage of above-mentioned grayscale voltage is to be formed at the voltage that the comparative voltage generative circuit of above-mentioned semiconductor device inside is generated.
6. semiconductor device according to claim 5 is characterized in that:
Above-mentioned comparative voltage generative circuit possesses the voltage bleeder mechanism, through above-mentioned voltage bleeder mechanism the grayscale voltage that is generated by above-mentioned grayscale voltage generative circuit is carried out dividing potential drop, generates above-mentioned test voltage.
7. semiconductor device according to claim 1 is characterized in that:
Use the comparative result of the above-mentioned grayscale voltage Vx and first comparative voltage (Vx+ Δ V) and the comparative result of above-mentioned grayscale voltage Vx and second comparative voltage (Vx-Δ V) to carry out the test of above-mentioned grayscale voltage.
8. semiconductor device according to claim 1 is characterized in that:
Above-mentioned semiconductor device is a Source drive.
9. semiconductor device according to claim 8 is characterized in that:
Above-mentioned semiconductor device has gate driver and liquid crystal drive voltage generation circuit.
10. have the semiconductor device of liquid crystal display drive circuit, it is characterized in that:
Above-mentioned liquid crystal display drive circuit has the grayscale voltage generative circuit and receives the grayscale voltage that is generated by above-mentioned grayscale voltage generative circuit and the gray-scale voltage selection circuit of selecting the grayscale voltage corresponding with gray scale,
When the grayscale voltage test of above-mentioned semiconductor device, in above-mentioned gray-scale voltage selection circuit, comparing, above-mentioned test result is exported from the outside terminal of above-mentioned semiconductor device as two threshold voltages by grayscale voltage that above-mentioned grayscale voltage generative circuit generated and the comparative voltage that generates in order to test above-mentioned grayscale voltage.
11. semiconductor device according to claim 10 is characterized in that:
Above-mentioned gray-scale voltage selection circuit has a plurality of on-off circuits, when the test of above-mentioned grayscale voltage, provides the comparative voltage of different magnitudes of voltage on the 1st on-off circuit and the 2nd on-off circuit.
12. semiconductor device according to claim 10 is characterized in that:
The test voltage of above-mentioned grayscale voltage is the voltage that sets in the outside of above-mentioned semiconductor device.
13. semiconductor device according to claim 10 is characterized in that:
The test voltage of above-mentioned grayscale voltage is formed in the voltage that the comparative voltage generative circuit of above-mentioned semiconductor device inside is generated.
14. have the semiconductor device of liquid crystal display drive circuit, it is characterized in that:
Above-mentioned liquid crystal display drive circuit has the grayscale voltage generative circuit; The grayscale voltage that reception is generated by above-mentioned grayscale voltage generative circuit is also selected the gray-scale voltage selection circuit of the grayscale voltage corresponding with gray scale; The temporary transient maintenance and the relevant information of grayscale voltage by above-mentioned gray-scale voltage selection circuit selection, offer the impact damper of above-mentioned gray-scale voltage selection circuit with the information of above-mentioned maintenance,
Wherein, above-mentioned gray-scale voltage selection circuit has:
According to the output of above-mentioned impact damper, select the selector circuit of the grayscale voltage that generated by above-mentioned grayscale voltage generative circuit;
When the grayscale voltage test of above-mentioned semiconductor device, grayscale voltage of being selected by above-mentioned selector circuit and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared, the potential difference of the two is amplified the amplifying circuit of also above-mentioned comparative result being exported from outside terminal as two threshold voltages; And
As the information that is input in the above-mentioned amplifying circuit, select the selecting arrangement of the output of above-mentioned comparative voltage or above-mentioned amplifying circuit.
15. semiconductor device according to claim 14 is characterized in that:
Also has the memory storage that is connected to above-mentioned impact damper and keeps the information in the above-mentioned impact damper that is provided to through the external interface storage of above-mentioned semiconductor device.
16. semiconductor device according to claim 14 is characterized in that:
The test voltage of above-mentioned grayscale voltage is the voltage that sets in the outside of above-mentioned semiconductor device.
17. semiconductor device according to claim 14 is characterized in that:
The test voltage of above-mentioned grayscale voltage is formed in the voltage that the comparative voltage generative circuit of above-mentioned semiconductor device inside is generated.
18. have the method for testing of the semiconductor device of liquid crystal display drive circuit, it is characterized in that:
When the grayscale voltage test of above-mentioned semiconductor device, grayscale voltage generative circuit by above-mentioned semiconductor device grayscale voltage that generates and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared, use two threshold voltages of exporting from the outside terminal of above-mentioned semiconductor device as above-mentioned test result to carry out the test of the grayscale voltage of above-mentioned semiconductor device.
19. the method for testing of semiconductor device according to claim 18 is characterized in that:
When the test of above-mentioned grayscale voltage, the outside terminal of above-mentioned semiconductor device is electrically connected with the comparer of test machine, uses from two threshold voltages of said external terminal output, carries out the gray scale test in the comparer of above-mentioned test machine together.
20. have the method for testing of the semiconductor device of liquid crystal display drive circuit, it is characterized in that:
Above-mentioned liquid crystal display drive circuit has the grayscale voltage generative circuit and receives the gray-scale voltage selection circuit of the grayscale voltage that is generated by above-mentioned grayscale voltage generative circuit,
Grayscale voltage that is generated by above-mentioned grayscale voltage generative circuit and the comparative voltage that generates in order to test above-mentioned grayscale voltage are compared in above-mentioned gray-scale voltage selection circuit, use two threshold voltages of exporting from above-mentioned semiconductor device as above-mentioned test result to carry out the test of the grayscale voltage of above-mentioned semiconductor device.
21. the method for testing of semiconductor device according to claim 20 is characterized in that:
When the test of above-mentioned grayscale voltage, the outside terminal of above-mentioned semiconductor device is electrically connected with the comparer of test machine, uses from two threshold voltages of said external terminal output, carries out the gray scale test in the comparer of above-mentioned test machine together.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003378595 | 2003-11-07 | ||
| JP2003378595 | 2003-11-07 |
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| CN1619328A true CN1619328A (en) | 2005-05-25 |
| CN100414312C CN100414312C (en) | 2008-08-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100922532A Expired - Fee Related CN100414312C (en) | 2003-11-07 | 2004-11-05 | Semiconductor device and testing method thereof |
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| Country | Link |
|---|---|
| KR (1) | KR100824158B1 (en) |
| CN (1) | CN100414312C (en) |
| TW (1) | TWI278647B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960511A (en) * | 2008-02-28 | 2011-01-26 | 夏普株式会社 | Drive circuit, and display device |
| CN101681604B (en) * | 2007-05-29 | 2012-06-27 | 夏普株式会社 | Driving circuit, display device and television system |
| CN102938258A (en) * | 2012-11-30 | 2013-02-20 | 上海宏力半导体制造有限公司 | Semiconductor testing method |
| CN102227764B (en) * | 2008-11-28 | 2014-04-16 | 夏普株式会社 | Drive circuit, display device and method for self-detecting and self-repairing drive circuit |
| CN105843717A (en) * | 2016-04-05 | 2016-08-10 | 河北上元工控技术有限公司 | Interface detection protection circuit for lane controller |
| CN106340264A (en) * | 2016-07-12 | 2017-01-18 | 友达光电股份有限公司 | Potential converter and output end short circuit detection method thereof |
| CN107786189A (en) * | 2016-08-26 | 2018-03-09 | 精工半导体有限公司 | Semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7240133B2 (en) * | 2018-10-29 | 2023-03-15 | ラピスセミコンダクタ株式会社 | semiconductor equipment |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0829500A (en) * | 1994-07-15 | 1996-02-02 | Advantest Corp | Semiconductor testing device |
| JPH0862307A (en) * | 1994-08-17 | 1996-03-08 | Advantest Corp | Voltage testing device with high accuracy |
| JP3558964B2 (en) * | 1999-07-23 | 2004-08-25 | シャープ株式会社 | Semiconductor integrated circuit inspection apparatus and inspection method |
| JP3522662B2 (en) * | 1999-07-23 | 2004-04-26 | シャープ株式会社 | Inspection apparatus for semiconductor integrated circuit, inspection method thereof, and storage medium storing inspection program |
| JP3617621B2 (en) * | 2000-09-29 | 2005-02-09 | シャープ株式会社 | Semiconductor integrated circuit inspection apparatus and inspection method thereof |
| JP3553509B2 (en) * | 2001-02-07 | 2004-08-11 | シャープ株式会社 | Semiconductor integrated circuit and inspection method thereof |
| JP2002258810A (en) * | 2001-03-05 | 2002-09-11 | Hitachi Ltd | Liquid crystal display |
| JP4097986B2 (en) * | 2002-04-30 | 2008-06-11 | シャープ株式会社 | Semiconductor integrated circuit inspection apparatus and inspection method |
-
2004
- 2004-10-20 TW TW093131824A patent/TWI278647B/en not_active IP Right Cessation
- 2004-11-04 KR KR1020040089139A patent/KR100824158B1/en not_active IP Right Cessation
- 2004-11-05 CN CNB2004100922532A patent/CN100414312C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681604B (en) * | 2007-05-29 | 2012-06-27 | 夏普株式会社 | Driving circuit, display device and television system |
| CN101960511A (en) * | 2008-02-28 | 2011-01-26 | 夏普株式会社 | Drive circuit, and display device |
| CN101960511B (en) * | 2008-02-28 | 2013-06-26 | 夏普株式会社 | Drive circuit, and display device |
| CN102227764B (en) * | 2008-11-28 | 2014-04-16 | 夏普株式会社 | Drive circuit, display device and method for self-detecting and self-repairing drive circuit |
| CN102938258A (en) * | 2012-11-30 | 2013-02-20 | 上海宏力半导体制造有限公司 | Semiconductor testing method |
| CN105843717A (en) * | 2016-04-05 | 2016-08-10 | 河北上元工控技术有限公司 | Interface detection protection circuit for lane controller |
| CN105843717B (en) * | 2016-04-05 | 2023-02-28 | 河北上元智能科技股份有限公司 | Interface detection protection circuit of lane controller |
| CN106340264A (en) * | 2016-07-12 | 2017-01-18 | 友达光电股份有限公司 | Potential converter and output end short circuit detection method thereof |
| CN106340264B (en) * | 2016-07-12 | 2019-08-09 | 友达光电股份有限公司 | Potential converter and output end short circuit detection method thereof |
| CN107786189A (en) * | 2016-08-26 | 2018-03-09 | 精工半导体有限公司 | Semiconductor device |
| CN107786189B (en) * | 2016-08-26 | 2022-07-05 | 艾普凌科有限公司 | Semiconductor device with a plurality of semiconductor chips |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100824158B1 (en) | 2008-04-21 |
| KR20050044254A (en) | 2005-05-12 |
| CN100414312C (en) | 2008-08-27 |
| TWI278647B (en) | 2007-04-11 |
| TW200521458A (en) | 2005-07-01 |
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