CN1901008A - Electronic circuit, electronic device, method of driving electronic device, electro-optical device, and electronic apparatus - Google Patents

Electronic circuit, electronic device, method of driving electronic device, electro-optical device, and electronic apparatus Download PDF

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Publication number
CN1901008A
CN1901008A CN 200610107777 CN200610107777A CN1901008A CN 1901008 A CN1901008 A CN 1901008A CN 200610107777 CN200610107777 CN 200610107777 CN 200610107777 A CN200610107777 A CN 200610107777A CN 1901008 A CN1901008 A CN 1901008A
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voltage
terminal
electrode
current potential
phase
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宫泽贵士
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

Unit circuits U are disposed at intersections between pairs of scan lines 13 and reference signal lines 17 and data lines 15. Each unit circuit U includes an electro-optical element 35 driven in accordance with a driving current Sdr, an inverter 34 which outputs the driving current Sdr for a time length according to a potential Va at an input end T, and a capacitive element which has a first electrode E1 connected to the input end T and has a second electrode E2 connected to the reference signal line 17. A plurality of scan lines 13 are successively selected every first period, and a data potential Vdata is supplied to the input end T of the unit circuit U corresponding to a selected scan line 13. A reference signal W[i] which maintains a low potential in the first period when a scan line 13 corresponding to a reference signal line 17 is selected, and has a potential changed with time in a second period different by reference signal lines 17 is supplied to the reference signal line 17. To sufficiently secure a period when an electro-optical element is driven.

Description

Electronic circuit, electronic installation and driving method thereof, electro-optical device and e-machine
Technical field
The present invention relates to a kind of technology that the action of various driven elements such as Organic Light Emitting Diode (below be called " OLED " (Organic LightEmitting Diode)) element, liquid crystal cell, electrophoresis element, electroluminescence (electrochromic) element, evaporation of electron element, resistive element is controlled.
Background technology
The various technology that are used to drive this driven element had just been proposed in the past.For example, in patent documentation 1, disclose a plurality of unit circuits that will comprise and be arranged in planar structure as the OLED element of driven element.The constituent parts circuit comprises: driving transistors, and it is according to the electric current of grid voltage control to the OLED component feeding; Reset transistor, it is used for that this driving transistors is carried out diode and connects; With the light emitting control transistor, whether it switches to the supply of OLED element electric current.According to this structure, can the error (deviation) of the threshold voltage of the driving transistors in the constituent parts circuit be compensated.
The various technology that are used to drive this driven element had just been proposed in the past.For example, in patent documentation 2, disclose a kind of OLED component feeding by each pixel of subtend drive signal (for example current signal) thus pulse width control the structure that shows many gray scales.In this structure, according to the data-signal of the gray scale of specifying each pixel and triangular wave etc. as time passes and the comparative result between the signal that level changes (below be called " reference signal "), to the pulse width of each pixel controlling and driving signal.
Yet the transistorized sum that preferably constitutes a unit circuit is less.Because the transistorized sum structure of unit circuit more at most is complicated more, manufacturing cost increases more.And in the electro-optical device that utilizes unit circuit as pixel, also the problem of Cun Zaiing is, the many more aperture opening ratios of transistorized sum are low more.Yet,, have limit aspect constituent parts circuit transistorized total reducing according to structure in the past.For example, in the structure of patent documentation 1, in unit circuit, for the OLED element is turned off the light, the light emitting control transistor is indispensable during writing data.One of technical scheme of the present invention is owing to for example oversimplify the structure of constituent parts circuit thereby effectively.
In patent documentation 2 disclosed structures, 1 frame is divided between scan period and light emission period, in scan period, after all pixel is supplied with data-signal, the OLED element by the supply of the reference signal between light emission period with all pixels drives (especially with reference to patent documentation 2 Fig. 2) together.In the structure of in 1 frame, setting in addition like this between scan period and light emission period, there is the problem that for example is difficult to fully guarantee the time length between light emission period.And if the time between light emission period is long insufficient, then the luminance shortage of each OLED element shows deepening in some cases.And then, if long shortening of the time between light emission period then has to make the pulse width (especially corresponding with low-light level pulse width) of drive signal to shorten.Yet in some cases, electrooptic element such as OLED element especially is because of concentrate (for example supply of needle pattern electric current) of electric current in the short time causes characteristic to worsen gradually.
And, in the structure of patent documentation 2, data-signal is supplied with to a side's of capacity cell electrode.In this structure, the current potential of the opposing party's electrode of capacity cell and need the time when correctly being set in the supply of data-signal in some cases.
Patent documentation 1: the spy opens 2003-122301 communique (Fig. 1)
Patent documentation 2: the spy opens 2003-223137 communique (0014 section and Fig. 2)
Summary of the invention
The present invention proposes in view of above problem.
Electronic installation of the present invention, possess: many first wirings (for example sweep trace of Fig. 1) 13, with above-mentioned many first many second wirings (for example data line 15 of Fig. 1) that wiring intersects, with a plurality of unit circuits that intersect corresponding configuration between above-mentioned many first wirings are connected up with above-mentioned many second, be used for supplying with many foundation calibration signal line of reference signals (for example reference signal W[1 of each embodiment]～W[m]) to above-mentioned a plurality of unit circuits, each of above-mentioned a plurality of unit circuits comprises: driven element (for example electrooptic element 35 of Fig. 3), and its supply by driving voltage or drive current is driven; Driving mechanism, it supplies with (for example one group of the phase inverter 34 of the phase inverter 34 of Fig. 3 or Fig. 7 and transistor 39) with above-mentioned driving voltage or above-mentioned drive current to above-mentioned driven element; On-off element, it controls (for example transistor 31 of Fig. 3) to being electrically connected between one second wiring in the input end (for example input end T of Fig. 3) that comprises in the above-mentioned driving mechanism and above-mentioned many second wirings; And capacity cell, it comprises first electrode that is connected with above-mentioned input end and second electrode that is connected with a foundation calibration signal line in above-mentioned many foundation calibration signal line, store charge between above-mentioned first electrode and above-mentioned second electrode.
In this structure, in between the first phase, supply with data-signal via on-off element to the input end of driving mechanism from second wiring, after warp between this first phase, if reference signal changes, then by the capacitive coupling in the capacity cell, and the current potential of the data-signal of the current potential that makes input end between the first phase before its only changes the variation of reference signal.Therefore, with the driving of the current potential respective length of input end during in, be supplied to the driven element of driving voltage or drive current, be driven into and the corresponding state of data-signal.And,, therefore have the advantages such as current potential of two electrodes can setting capacity cell at short notice because the current potential of second electrode of capacity cell is directly set by the reference signal line.
And the electronic installation among the present invention possesses: many first wirings (for example sweep trace 13 of Fig. 1); With many first many second wirings (for example data line 15 of Fig. 1) of connecting up and intersecting; Be configured in and a plurality of unit circuits that intersect corresponding position between many first wirings are connected up with many second; By the selection circuit of between each first phase many first wirings being selected respectively (for example scan line drive circuit 23 of Fig. 1); Between each first phase, supply with the data supply circuit (for example data line drive circuit 25 of Fig. 1) of data current potential respectively to many second wirings; For many foundation calibration signal line respectively, keep constant potential between corresponding with this reference signal line first selecteed first phase of wiring, and the signal generating circuit of the mutagenic reference signal of current potential (for example reference signal W[1 in each embodiment]～the W[m]) output passing in time during different every a foundation calibration signal line.And then each of a plurality of unit circuits comprises: driven element (for example electrooptic element 35 of Fig. 3), and its supply by driving voltage or drive current is driven; Driving mechanism (for example group of the phase inverter 34 of the phase inverter 34 of Fig. 3 or Fig. 7 and transistor 39), its with the corresponding length of current potential of input end (for example input end T of Fig. 3) during in driving voltage or drive current are supplied with to driven element; On-off element (for example transistor 31 of Fig. 3), it was electrically connected input end between the first selecteed first phase of wiring corresponding with this unit circuit with second wiring; And capacity cell, it comprises first electrode that is connected with input end and second electrode that is connected with a foundation calibration signal line in above-mentioned many foundation calibration signal line, store charge between above-mentioned first electrode and above-mentioned second electrode.
In this structure, input end to driving mechanism between the first phase is supplied with data-signal via on-off element, the warp second phase later between this first phase, if passing to produce in time, reference signal changes, then by the capacitive coupling in the capacity cell, the data current potential of the current potential that makes input end between the first phase before its only changes the variation of reference signal.Therefore, with the corresponding length of current potential of input end during in be supplied to the driven element of driving voltage or drive current, be driven into and the corresponding state of data current potential.And,, but therefore have the advantage of the current potential of two electrodes setting capacity cell in the short time because the current potential of second electrode of capacity cell directly set by the reference signal line.
At this, the current potential of reference signal is passed and the mutagenic second phase in time, set separately by every foundation calibration signal line, and the sequential difference.Therefore, between the first phase in if the data current potential of a unit circuit is taken into, then need not wait for being taken into of the data current potential of other unit circuit, but the driven element of this unit circuit is driven successively.For example, the unit circuit that is through with from being taken into of data current potential begins successively driven element to be driven.Therefore, according to the present invention, with in all unit circuits, set separately be taken into the data current potential during and make all OLED elements luminous during structure in the past compare, can fully guarantee the constituent parts circuit driven element driven during.
In addition, the reference signal among preferred the present invention is that at least a portion in carrying out between the first phase that writes of data-signal is kept constant potential, and passes the mutagenic signal of current potential in time at least during driving.But the current potential of the reference signal during beyond this and its version can suitably be set according to the drive form of driven element or function etc.In addition, between the first phase and the current potential of reference signal pass in time and interval between moment of beginning to change, also can suitably set according to the drive form of driven element or function etc.
In optimized technical scheme of the present invention, above-mentioned a plurality of reference signal lines current potential separately, the cycle in accordance with regulations produces and changes.More particularly, comprising: select circuit, it is selected respectively above-mentioned many first wirings; And signal generating circuit, it supplies with the said reference signal to above-mentioned many foundation calibration signal line successively with the order of selecting above-mentioned first wiring.According to this technical scheme, the second phase that can guarantee each reference signal is that time enough is long.But, the order of the selection of first wiring, with may not be consistent about order corresponding to the second phase arrival of the reference signal line of each first wiring.
In optimized technical scheme of the present invention, between the first phase in, by supplying with data-signal with above-mentioned on-off element to above-mentioned input end, thereby set the current potential of above-mentioned input end via above-mentioned one second wiring.And, supply with the length during the driving of above-mentioned driving voltage or above-mentioned drive current to above-mentioned driven element, with between the above-mentioned first phase in the current potential of the above-mentioned input end that is set corresponding.According to this technical scheme, can be according to data-signal to the time progress row setting during the driving that driven element is supplied with driving voltage or drive current.In these technical schemes, input end becomes suspended state at least a portion during driven element is supplied with the driving of driving voltage or drive current.According to this technical scheme,, therefore can make the current potential of input end produce change definitely according to the variation of passing in time of reference signal owing to prevent the charge leakage of first electrode.
In technical scheme more specifically, driving mechanism, surpass at the current potential of above-mentioned input end regulation current potential during and during the current potential of above-mentioned input end is lower than the current potential of regulation, above-mentioned driving voltage or above-mentioned drive current are supplied with to above-mentioned driven element.For example, driving mechanism when the current potential of input end surpasses the current potential (the threshold voltage vt h in each embodiment) of regulation, with driving voltage or drive current output, stops the output of driving voltage or drive current when the current potential of input end is lower than the current potential of regulation.According to this technical scheme,, therefore can suppress the deviation of the driving condition (for example intensity level of light-emitting component) of the driven element that the deviation because of the characteristic of the each several part of unit circuit or driven element causes because electrooptic element driven by 2 values.The typical case of the driving mechanism in this technical scheme is a phase inverter.
More particularly, the current potential of an above-mentioned foundation calibration signal line, in between the above-mentioned first phase when setting the current potential of above-mentioned input end according to above-mentioned data-signal, at least be set to first current potential, the current potential of an above-mentioned foundation calibration signal line was above-mentioned first current potential when second phase began, an above-mentioned foundation calibration signal line, in the above-mentioned second phase, become second current potential with voltage level different with above-mentioned first current potential, the current potential of the above-mentioned foundation calibration signal line when the above-mentioned second phase finishes is above-mentioned first current potential.In more detail, the variation of the current potential of the above-mentioned foundation calibration signal line in the above-mentioned second phase is to be the line symmetry at center with the moment that becomes above-mentioned second current potential.That is, reference signal, the initial point and the mid point between the terminal point (for example mid point tc of Fig. 2 or Fig. 4) that become with the second phase they are the waveform (typical triangular wave) of datum line symmetry.
According to this technical scheme, can not rely on data-signal with driven element actual driven during (for example electrooptic element luminous during) center of gravity on time shaft as the center of the second phase.Just, the form (waveform of reference signal) of the current potential of reference signal line change needs not be strict line symmetry.Promptly, as long as according to during the removing time length and be driving the shortest during the zero driving in during corresponding with other data-signal respectively a plurality of drivings, with during the long driving on it of time and the mode that repeats on the time shaft of the second phase, the current potential (being reference signal) of setting each reference signal line gets final product.For example, if the illustration with reference to Fig. 4 describes, then about becoming the long gray scale G1 of shortest time of non-zero during the driving that has driving circuit Sdr to flow among gray scale G0～G3, during driving, relatively during the driving of gray scale G2 or gray scale G3 (during driving longer during the driving corresponding) with gray scale G1, at second phase Pb[i] time shaft on the mode that overlaps, generate reference signal.
In optimized technical scheme of the present invention, many foundation calibration signal line extends on the direction of intersecting with many second wirings.According to this structure, can be for the constituent parts circuit that jointly is connected with one first wiring, via reference signal line, supply with common reference signal definitely along the simple shape of this first wiring extension.
In different in addition technical schemes, each of above-mentioned a plurality of unit circuits comprises resetting-mechanism (for example transistor 37 of Fig. 5), its via above-mentioned one second wiring and above-mentioned on-off element before between the first phase of above-mentioned input end supply data-signal, above-mentioned input end is set at the current potential of regulation.According to this technical scheme, before between the first phase, because input end is initialized to the current potential of regulation, therefore can be rapidly between the first phase and be the data current potential with the potential setting of input end definitely.
The electronic installation of each technical scheme discussed above is used in the various e-machines.The typical case of this e-machine is to utilize the machine of electronic installation as display device.As this e-machine, a guy's computing machine or mobile phone etc.Just, the purposes of the electronic installation among the present invention is not the demonstration that is defined in image.For example, even if, also can use electronic installation of the present invention as the exposure device (photohead) that is used for forming at image carriers such as photoconductor drums sub-image by the irradiation of light.
Driven element among the present invention comprises by electrically driven (operated) all key elements.The typical case of this driven element is by giving the electrooptic element that electric flux (for example electric field applies) changes the such optical characteristics of brightness or transmissivity light-emitting components such as (for example) OLED elements.The present invention, also can by specific driving as electrooptic element special-purpose electro-optical device.This electro-optical device possesses: many sweep traces; Many data lines of intersecting with above-mentioned many sweep traces; With the corresponding a plurality of unit circuits that are configured that intersect between above-mentioned many sweep traces and the above-mentioned many data lines; With the many foundation calibration signal line that is used for supplying with to above-mentioned a plurality of unit circuits reference signal, wherein above-mentioned a plurality of unit circuits comprise respectively: electrooptic element, and its supply by driving voltage or drive current is driven; Driving mechanism, it is supplied with above-mentioned driving voltage or above-mentioned drive current to above-mentioned electrooptic element; On-off element, it is controlled being electrically connected between the data lines in the input end that comprises in the above-mentioned driving mechanism and the above-mentioned many data lines; And capacity cell, it has first electrode that is connected with above-mentioned input end and second electrode that is connected with a foundation calibration signal line in above-mentioned many foundation calibration signal line, store charge between above-mentioned first electrode and above-mentioned second electrode, with above-mentioned driving voltage or the above-mentioned drive current length during the driving that above-mentioned electrooptic element is supplied with, with between the first phase in current potential by the above-mentioned input end that data-signal set to above-mentioned input end supply data-signal via an above-mentioned data lines and above-mentioned on-off element corresponding.By this structure, also can realize effect and the effect same with electronic installation of the present invention.
And the present invention also can be used as and is used for that electronic installation is carried out method of driving and is implemented.Promptly, driving method among the present invention, it is a kind of driving method of electronic installation, this electronic installation wherein, possess: cross one another many first wirings and many second wirings, connect up with above-mentioned many first and the above-mentioned many second a plurality of unit circuits and the many foundation calibration signal lines that intersect corresponding configuration between connecting up, above-mentioned a plurality of unit circuit comprises respectively: driven element, and its supply by driving voltage or drive current is driven; Driving mechanism, it is supplied with above-mentioned driving voltage or above-mentioned drive current to above-mentioned driven element; And capacity cell, it comprises first electrode that is connected with the input end that comprises in the above-mentioned driving element and second electrode that is connected with a foundation calibration signal line in above-mentioned many foundation calibration signal line, store charge between above-mentioned first electrode and above-mentioned second electrode, between the first phase, supply with data-signal by one second wiring from above-mentioned many second wirings to above-mentioned input end, thereby set the current potential of above-mentioned input end, make each current potential cycle in accordance with regulations of above-mentioned many foundation calibration signal line produce change.Also can realize effect and the effect same by this method with electronic installation of the present invention.
The electronic installation of a kind of technical scheme of the present invention, comprise: signal wire, the unit circuit and the voltage supply line that are connected with above-mentioned signal wire, above-mentioned unit circuit, comprise: driving transistors, it possesses control terminal (for example grid), the first terminal (side of source electrode and drain electrode) and second terminal that is connected with above-mentioned voltage supply line (the opposing party of source electrode and drain electrode), and the voltage of the above-mentioned control terminal of foundation is set the conducting state between above-mentioned the first terminal and above-mentioned second terminal; Driven element (for example electrooptic element 11 of Figure 10); First on-off element (for example transistor T 1 of Figure 10), it is controlled being electrically connected between the either party in the above-mentioned control terminal of above-mentioned driving transistors and above-mentioned the first terminal and above-mentioned second terminal; And capacity cell (for example capacity cell C of Figure 10), it possesses dielectric between first electrode (for example first electrode Ea of Figure 10) and second electrode (for example second electrode Eb of Figure 10), above-mentioned first electrode is connected with the above-mentioned control terminal of above-mentioned driving transistors, above-mentioned second electrode is connected with above-mentioned signal wire, is set according to the conducting state between above-mentioned the first terminal and above-mentioned second terminal to the drive current of above-mentioned driven element supply and the size (level) of at least one side in the driving voltage.
In this structure, be electrically connected via first on-off element with a side of the first terminal and second terminal by control terminal driving transistors, thereby the error of the threshold voltage of compensation for drive transistor, on the other hand, the grid voltage of driving transistors is set to voltage correspondent voltage value with signal wire by the capacitive coupling in the capacity cell.Therefore, by extremely simple structure, just can be to the error of the threshold voltage of driving transistors (different between the threshold voltage of a driving transistors and the design load, the perhaps difference of the threshold voltage of the driving transistors of constituent parts circuit in containing the structure of a plurality of unit circuits) compensates, and driven element is driven.
In addition, in the electronic installation of the technical program, though also can be between signal wire and second electrode configuration be used for both electrical connection controlled the on-off element of (switch and whether the voltage of signal wire is supplied with to second electrode), but according to the viewpoint of the simplification that promotes unit circuit, preferred second electrode directly (promptly is not situated between on-off element is arranged) with signal wire and is connected.
In optimized technical scheme of the present invention, between the first phase (for example Fig. 9 write period P wrt), either party in above-mentioned the first terminal and above-mentioned second terminal, be electrically connected with the above-mentioned control terminal of above-mentioned driving transistors via above-mentioned first on-off element, between the above-mentioned first phase, supply with data-signal (for example data voltage Vdata of Fig. 9) to above-mentioned second electrode via above-mentioned signal wire, at the second phase (for example driving period P drv of Fig. 9), supply with passing in time in this second phase and mutagenic control signal (for example control voltage Vctl of Fig. 9) to above-mentioned second electrode.
Under this technical scheme, between the first phase, data-signal is kept in second electrode, in the second phase, the voltage of second electrode is passed in time and is produced change.And, the voltage of first electrode (being the grid voltage of driving transistors), by the capacitive coupling in the capacity cell, the only change of the difference correspondent voltage value of the level between generation and data-signal and the control signal.Therefore, according to the technical program, can and the corresponding time of data-signal long-term between in driven element is driven.In addition, become the structure of suspended state at the second phase first electrode, then, therefore the voltage of first electrode can be set at and data-signal correspondent voltage value accurately owing to can be suppressed at the leakage of electric charge stored in first electrode if adopt.
In addition, in the driving circuit of this technical scheme, the so-called circuit that data-signal is supplied with to unit circuit, with the circuit that control signal is supplied with to unit circuit, both can be used as the single circuit that leaves mutually and be installed in the electronic installation, also can under the state that both sides is carried in single circuit (for example IC chip), be installed in the electronic installation.And its structure both can be signal wire to be also used as be used for wiring that control signal is supplied with to unit circuit, also can be via the wiring in signal wire separately control signal to be supplied with to unit circuit.
The electronic installation of technical scheme more specifically also possesses: voltage control circuit, its voltage with above-mentioned voltage supply line are set at any (for example being electrically connected between voltage supply line and the regulation current potential being controlled) in a plurality of magnitudes of voltage.Above-mentioned voltage control circuit in this technical scheme, for example, at least a portion between the above-mentioned first phase, the voltage of above-mentioned voltage supply line is set at than above-mentioned the first terminal first magnitude of voltage of electronegative potential (for example magnitude of voltage Vss) more, at least a portion in the above-mentioned second phase, with the voltage of above-mentioned voltage supply line, be set at than above-mentioned the first terminal second magnitude of voltage of noble potential (for example magnitude of voltage Vdd) more.
In this structure, at least a portion between the first phase (more particularly the first terminal or second terminal are connected with control terminal during at least a portion) is set at the voltage of voltage supply line than the first terminal first magnitude of voltage of electronegative potential more.Therefore, compare, can reduce the electric flux of giving to driven element (to the drive current or the driving voltage of driven element supply) with the structure that in during this period, the voltage of voltage supply line is set at second magnitude of voltage.Therefore, be not used for controlling for driven element to give electric flux whether on-off element (for example " the light emitting control transistor " of patent documentation 1) even if do not dispose, can suppressing (be idealized as and stop) to the supply of driven element on the principle yet electric flux between the first phase.But, though the light emitting control transistor is unwanted on principle, the meaning that configuration this light emitting control transistorized structure neither be removed in the scope of the present invention.That is, during structure of the present invention, its purpose are still that more properly the regulation driven element is driven, also can be as the light emitting control transistor of patent documentation 1, configuration is used to control for driven element to give electric flux whether on-off element.
Yet, as the transistor (especially driving transistors) of component unit circuit, can adopt the transistor (thin film transistor (TFT) on the typical case) that comprises the semiconductor layer of forming by various semiconductor materials (for example polycrystal silicon, micro-crystallization silicon, single crystal silicon or amorphous silicon).The transistor that known semiconductor layer is formed by for example amorphous silicon, if the sense of current that flows is fixed all the time therein, then threshold voltage can produce change as time passes.According to the technical program, between the first phase, electric current (for example electric current I 0 of Figure 11) flows to voltage supply line via second terminal from the first terminal, and on the other hand in the second phase, electric current is supplied with to driven element via the first terminal from second terminal.That is because the sense of current that flows in driving transistors is identical with the second phase between the first phase, even if so according to the structure that the semiconductor layer of the technical program driving transistors is made of amorphous silicon, also can suppress the change of this threshold voltage.In other words, the structure for the semiconductor layer of driving transistors is made of amorphous silicon especially is fit to be applied to the present invention.
In other technical scheme, above-mentioned first on-off element is a switching transistor, and the transistor that comprises in the above-mentioned unit circuit only is above-mentioned driving transistors and above-mentioned switching transistor.According to this structure, the transistor that comprises in the unit circuit can be reduced to these two transistors of driving transistors and switching transistor, and the error of the threshold voltage of driving transistors is compensated.In addition, the concrete example of this technical scheme is as the 3rd embodiment (Figure 10) aftermentioned.
More specifically in the technical scheme, driving element is driven when the magnitude of voltage of the first terminal surpasses the magnitude of voltage of regulation, first magnitude of voltage, according to the magnitude of voltage of the first terminal between the first phase become than the magnitude of voltage of regulation more the mode of electronegative potential determined.According to the technical program, because the magnitude of voltage of the first terminal between the first phase becomes the lower current potential of magnitude of voltage than regulation, therefore even if do not dispose the transistorized structure of light emitting control, the driving (for example luminous) of the driven element in also can stopping between the first phase definitely.
Yet the first terminal of driving transistors might cause magnitude of voltage generation change once in a while because of various extraneous factors such as noises.And,, might hinder the desirable state that driven element is driven that returns to because of the magnitude of voltage after this change (for example the magnitude of voltage of the first terminal becomes the following situation of second magnitude of voltage etc.).Therefore, in the scheme of suitable technique more of the present invention, unit circuit comprises first resetting-mechanism, and its voltage with the first terminal is set at the magnitude of voltage of regulation.According to this technical scheme, even for example the magnitude of voltage of the first terminal produces when changing once in a while, the voltage of the first terminal also can be set at desirable magnitude of voltage by first resetting-mechanism.According to being reset to the magnitude of voltage that to carry out desirable driving to driven element by voltage like this, thereby realize the stabilized driving of driven element with the first terminal.In addition, be arbitrarily by resetting-mechanism with the moment that the voltage of the first terminal is set at the magnitude of voltage of regulation.For example, waiting the magnitude of voltage of cycle setting the first terminal in accordance with regulations before can beginning between each first phase, also can be the structure of setting the magnitude of voltage of the first terminal when being used for the various operational characters such as operational character of energized by user's operation.
More particularly, first resetting-mechanism comprises second switch element (for example transistor T 2 of Figure 13), it is electrically connected the first terminal during initialization with voltage supply line, voltage control circuit during initialization, is set at above-mentioned second magnitude of voltage with the voltage of voltage supply line.According to this technical scheme, because for the magnitude of voltage to the first terminal resets and the dual-purpose voltage supply line, therefore compare in the structure of the wiring of voltage supply line separately with use in the resetting of the magnitude of voltage of the first terminal, can simplifying the structure with electronic installation.In addition, the concrete example of this technical scheme is as the second embodiment aftermentioned.
Perhaps, first resetting-mechanism, comprise second switch element (for example transistor T 2 of Figure 17), it is electrically connected the first terminal during initialization with the supply lines of supplying with constant voltage, voltage control circuit can be the structure that the voltage of voltage supply line is set at first magnitude of voltage during initialization.According to this technical scheme, owing to during initialization, the voltage of voltage supply line is set at first magnitude of voltage, therefore has the advantage that can be definitely the driving (for example luminous) of the driven element during the initialization be stopped.In addition, the concrete example of this technical scheme is as the 3rd embodiment aftermentioned.
In other technical scheme of the present invention, unit circuit comprises second resetting-mechanism, and its voltage with the control terminal of driving transistors is set at the magnitude of voltage of regulation.According to this technical scheme, because the voltage of the control terminal of driving transistors is set at desirable magnitude of voltage, therefore no matter how the situation of control terminal can both be set at desired value with the magnitude of voltage of the control terminal of driving transistors with high precision before it.
More particularly, second resetting-mechanism comprises the 3rd on-off element (for example transistor T 3 of Figure 20), it is electrically connected control terminal during initialization with voltage supply line, voltage control circuit during initialization, is set at second magnitude of voltage with the voltage of voltage supply line.According to the technical program, the voltage with control terminal during initialization is set at second magnitude of voltage.And, since for the magnitude of voltage to control terminal resets with the voltage supply line dual-purpose, therefore compare in the structure of the wiring of voltage supply line separately with use in the resetting of the magnitude of voltage of the first terminal, can simplifying the structure with electronic installation.In addition, the concrete example of this technical scheme is as the 6th embodiment aftermentioned.
Electronic installation of the present invention is used in the various e-machines.The typical case of this e-machine is to utilize the machine of electronic installation as display device.As this e-machine, a guy's computing machine or mobile phone.Just, the purposes of electronic installation is not the demonstration that is defined in image among the present invention.For example, as being used for being radiated at the exposure device (photohead) that image carrier such as photoconductor drum forms sub-image and also can using electronic installation of the present invention by light.
Driven element among the present invention comprises by electrically driven (operated) all key elements.The typical case of this driven element is by giving the electrooptic element that electric flux changes the such optical property (gray scale) of brightness or transmissivity.Electro-optical device in the technical scheme of the present invention, by with the electronic device dedicated of above each technical scheme in the driving of electrooptic element and constitute.Promptly, this electro-optical device (for example adopting the light-emitting device of light-emitting component) as electrooptic element, comprise signal wire, the unit circuit and the voltage supply line that are connected with above-mentioned signal wire, above-mentioned unit circuit, comprise: driving transistors, it possesses control terminal, the first terminal and second terminal that is connected with above-mentioned voltage supply line, and the voltage of the above-mentioned control terminal of foundation, sets the conducting state between above-mentioned the first terminal and above-mentioned second terminal; Electrooptic element; First on-off element, it is controlled being electrically connected between the either party in the above-mentioned control terminal of above-mentioned driving transistors and above-mentioned the first terminal and above-mentioned second terminal; And capacity cell, it possesses dielectric between first electrode and second electrode, above-mentioned first electrode is connected with the above-mentioned control terminal of above-mentioned driving transistors, above-mentioned second electrode is connected with above-mentioned signal wire, to the drive current of above-mentioned electrooptic element supply and the size of the either party in the driving voltage, set according to the conducting state between above-mentioned the first terminal and above-mentioned second terminal.According to this structure, also can realize effect and the effect same with electronic installation discussed above.In addition, each technical scheme at cited more than the electronic installation can be suitable for too for this electro-optical device.
In addition, the electronic circuit of a kind of technical scheme of the present invention, be used to drive the electronic circuit of driven element, comprise: signal wire, the unit circuit and the voltage supply line that are connected with above-mentioned signal wire, above-mentioned unit circuit comprises: driving transistors, and it possesses control terminal, the first terminal and second terminal that is connected with above-mentioned voltage supply line, and, set the conducting state between above-mentioned the first terminal and above-mentioned second terminal according to the voltage of above-mentioned control terminal; First on-off element, it is controlled being electrically connected between the either party in the above-mentioned control terminal of above-mentioned driving transistors and above-mentioned the first terminal and above-mentioned second terminal; And capacity cell, it possesses dielectric between first electrode and second electrode, above-mentioned first electrode is connected with the above-mentioned control terminal of above-mentioned driving transistors, above-mentioned second electrode is connected with above-mentioned signal wire, to the drive current of above-mentioned driven element supply and the size of the either party in the driving voltage, set according to the conducting state between above-mentioned the first terminal and above-mentioned second terminal.According to this structure, also can realize effect and the effect same with electronic installation discussed above.In addition, in this electronic circuit, have or not driven element all inessential.And each technical scheme at cited more than the electronic installation can be suitable for too for this electronic circuit.
In addition, a kind of technical scheme of the present invention is a kind of electronic installation in each technical scheme discussed above to be carried out method of driving.This driving method, be used to drive electronic installation with unit circuit, this unit circuit, possess: driving transistors, it possesses control terminal, the first terminal and second terminal that is connected with above-mentioned voltage supply line, and, set the conducting state between above-mentioned the first terminal and above-mentioned second terminal according to the voltage of above-mentioned control terminal; And driven element, between the first phase, either party in above-mentioned the first terminal and above-mentioned second terminal is electrically connected with the above-mentioned control terminal of above-mentioned driving transistors, in between this first phase, supply with data-signal via above-mentioned signal wire to above-mentioned second electrode, in the second phase, in this second phase, pass mutagenic control signal in time to above-mentioned second electrode supply.According to this method, also can realize with above each technical scheme in same effect and the effect of electronic installation.And the various technical schemes at cited more than the electronic installation can be suitable for too for this driving method.
Description of drawings
Fig. 1 is the block diagram of the structure of the relevant electronic installation of expression first embodiment of the present invention.
Fig. 2 is expression sweep signal Y[i] and reference signal W[i] the sequential chart of waveform.
Fig. 3 is the circuit diagram of the structure of a unit circuit of expression.
Fig. 4 is the sequential chart of the relation between expression current potential Va and the drive current Sdr.
Fig. 5 is the circuit diagram of the structure of a unit circuit in the electronic installation of expression second embodiment of the present invention.
Fig. 6 is expression variation relevant reference signal W[i] the sequential chart of waveform.
Fig. 7 is the circuit diagram of the structure of the relevant unit circuit of expression variation.
Fig. 8 is the block diagram of the structure of the relevant electronic installation of expression the 3rd embodiment of the present invention.
Fig. 9 is the sequential chart that is used to illustrate the action of electronic installation.
Figure 10 is the circuit diagram of the structure of a unit circuit of expression.
Figure 11 is the circuit diagram of the apperance of the unit circuit during expression writes.
Figure 12 is the circuit diagram of the apperance of the unit circuit during expression drives.
Figure 13 is the circuit diagram of the structure of the relevant unit circuit of expression the 4th embodiment of the present invention.
Figure 14 is the sequential chart of the action of the electronic installation that is used to illustrate that the 4th embodiment is relevant.
Figure 15 is the circuit diagram of the apperance of the unit circuit during the expression initialization.
Figure 16 is the sequential chart of action that is used for illustrating the variation of the 4th embodiment.
Figure 17 is the circuit diagram of the structure of the relevant unit circuit of expression the 5th embodiment of the present invention.
Figure 18 is the sequential chart of the action of the electronic installation that is used to illustrate that the 5th embodiment is relevant.
Figure 19 is the circuit diagram of the apperance of the unit circuit during the expression initialization.
Figure 20 is the circuit diagram of the structure of the unit circuit in expression the 6th embodiment of the present invention.
Figure 21 is the sequential chart of the action of the electronic installation that is used to illustrate that the 6th embodiment is relevant.
Figure 22 is the circuit diagram of the apperance of the unit circuit during the expression initialization.
Figure 23 is the stereographic map of the form (personal computer) of the relevant e-machine of expression the present invention.
Figure 24 is the stereographic map of the form (portable telephone) of the relevant e-machine of expression the present invention.
Figure 25 is the stereographic map of the form (carrying information terminal) of the e-machine among expression the present invention.
Among the figure:
The D-electronic installation, 10-element arrays portion, 13-sweep trace, 15-data line, signal wire, the 17-voltage supply line, 19-reference signal line, 23-scan line drive circuit, 25-data line drive circuit, signal-line driving circuit, the 27-voltage control circuit, 29-signal generating circuit, 37-transistor, the 33-capacity cell, the 34-phase inverter, the input end of T-phase inverter, 35-electrooptic element, Y[i]-sweep signal, X[j]-data-signal, the current potential of Vdata-data-signal, W[i] reference signal, the Sdr-drive current, the current potential of the input end of Va-phase inverter.
Embodiment
(A: first embodiment)
Fig. 1 is the block diagram of the structure of the relevant electronic installation of expression first embodiment of the present invention.The illustrated electronic installation D of this figure, be as being used for the mechanism of display image and adopted electro-optical device comprises the circuit (scan line drive circuit 23/ data line drive circuit 25/ signal generating circuit 27) that a plurality of unit circuit U are arranged in planar element arrays portion 10 and are used for the constituent parts circuit U is driven in various e-machines.In addition, scan line drive circuit 23, data line drive circuit 25 and signal generating circuit 27, also can be respectively be installed among the electronic installation D as circuit independently, part or all of these circuit also can be used as single circuit and is installed among the electronic installation D.
As shown in Figure 1, in element arrays portion 10, be formed on m root sweep trace 13 that directions X extends, with each sweep trace 13 be to and the m foundation calibration signal line 19 that extends at directions X and in the n data lines 15 (m and n are natural number) of extending with the Y direction of directions X quadrature.The constituent parts circuit U is configured in the corresponding position that intersects between 19 pairs on sweep trace 13 and reference signal line and the data line 15.Therefore, these unit circuits U, be configured to vertical m capable * horizontal n row rectangular.
Scan line drive circuit 23 is to be used for the circuit successively m root sweep trace 13 selected respectively.If describe in further detail, then as shown in Figure 2, scan line drive circuit 23 is created on specified time limit of setting by each frame (1F) of (below be called " between the first phase ") Pa[1]～Pa[m] become the sweep signal Y[1 of high level successively]～Y[m], and to each sweep trace 13 output.The sweep signal Y[i that supplies with to the sweep trace 13 of i capable (i is for satisfying the integer of 1≤i≤m)], be Pa[i between i the first phase in 1 frame (1F)] become high level, this in addition during in keep low level signal.Sweep signal Y[i] to the transfer of high level, mean that selection i is capable.
The data line drive circuit 25 of Fig. 1 is supplied with data-signal X[1 via each data line 15 to each of 1 row (n) unit circuit U corresponding with the selected sweep trace of scan line drive circuit 23 13]～X[n].At the capable sweep trace of i Pa[i between the 13 selecteed first phases], the data-signal X[j that supplies with to the data line 15 of j row (j is for satisfying the integer of 1≤j≤n)], become and belonging to the specified corresponding current potential Vdata of gray scale (brightness) of unit circuit U that the capable j of i is listed as.The gray scale of constituent parts circuit U is specified by the gradation data of supplying with from the outside.
Signal generating circuit 27 is to generate reference signal W[1]～W[m] and the circuit exported respectively to m foundation calibration signal line 19.As shown in Figure 2, reference signal W[i], be from sweep signal Y[i] become Pa[i between first phase of high level] initial point keep current potential VH to terminal always, and at Pa[i between this first phase] through (below be called " second phase ") Pb[i during the regulation later] initial point to terminal during in time and current potential produces the signal of change.
Reference signal W[i in the present embodiment], be Pb[i from the second phase] the waveform of mid point tc (promptly apart from second phase Pb[i] the initial point and identical time of terminal point both sides in the long moment) till the initial point with from the waveform of mid point tc till to terminal, becoming with this center tc is the line symmetrical triangular ripple of benchmark.That is, reference signal W[i], from second phase Pb[i] initial point to this second phase Pb[i] stage of mid point tc, from current potential VH to than till the current potential VL of VH low level along with the time through reducing simultaneously; From the stage of mid point tc, rise along with the process of time and arrive current potential VH from current potential VL to terminal point.
As shown in Figure 2, reference signal W[1]～W[m] difference phase place difference.That is, reference signal W[1]～W[m] produce the second phase Pb[1 of change]～Pb[m] each constantly, set in addition and mutual difference by every foundation calibration signal line 19 (every row).More particularly, by the reference signal W[1 that supplies with to each reference signal line 19]～W[m] second phase Pb[1 of defined]～Pb[m], respectively with the sweep signal Y[1 corresponding with this reference signal line 19]～Y[m] each order that becomes high level arrive successively.Therefore, as shown in Figure 2, reference signal W[i], with the sweep signal Y[i+1 of delegation next] parallel to moving of high level, in the scope of current potential VH till current potential VL, producing change.
Then, with reference to Fig. 3, the concrete structure of constituent parts circuit U is described.In addition, in the figure, though only illustrate a unit circuit U who is positioned at the capable j row of i, other unit circuit U also is same structure.
As shown in Figure 3, unit circuit U comprises transistor 31, capacity cell 33, phase inverter (inverter) 34 and electrooptic element 35.Electrooptic element 35 is to make the OLED element of luminescent layer between anode and negative electrode of being made up of organic EL Material, with luminous with the corresponding intensity level of size of current of the drive current Sdr that exports from phase inverter 34.In addition, the accumulated value that time produced according to intensity level is equivalent to brightness.
Phase inverter 34 comprises the transistor 341 of p channel-type and the transistor 342 of n channel-type.The source electrode of transistor 341 is connected with the power lead of supplying with high-order side power supply potential Vdd.The source electrode of the transistor 342 of n channel-type is connected with the ground wire of the power supply potential of supplying with the low level side (below be called " earthing potential ") Vss.Transistor 341 and transistor 342 drain electrode separately are connected with the anode of electrooptic element 35 is public.And then, transistor 341 and transistor 342 grid separately, T interconnects with input end.
Be lower than at the current potential of the input end T of phase inverter 34 under the situation of current potential (following only be called " threshold voltage ") Vth of regulation, transistor 341 becomes conducting state, and supplies with drive current Sdr to electrooptic element 35.This drive current Sdr is the electric current that makes electrooptic element 35 luminous.On the contrary, under current potential Va surpassed the situation of threshold voltage vt h, because transistor 341 becomes cut-off state, transistor 342 became conducting state, and therefore the supply to the drive current Sdr of electrooptic element 35 stops.
The capacity cell 33 of Fig. 3 comprises first electrode E1 that is connected with the input terminal T of phase inverter 34 and the second electrode E2 that is connected with reference signal line 19, store charge between the first electrode E1 and the second electrode E2.And the transistor 31 of n channel-type is the on-off element of controlling between the input end T of phase inverter 34 and data line 15 and to both electrical connections (conducting and non-conduction).The grid of transistor 31 is connected with sweep trace 13.Therefore, at sweep signal Y[i] become Pa[i between first phase of high level] in, transistor 31 becomes conducting state; At sweep signal Y[i] to keep between low period, transistor 31 becomes cut-off state.
The concrete action of electronic installation D in the present embodiment then, is described.Below, will belong to the itemize action of a circuit U of the capable j of i and be divided into Pa[i between the first phase] and second phase Pb[i] describe.
(a) Pa[i between the first phase]
Pa[i between the first phase] in, because sweep signal Y[i] be transferred to high level, so transistor 31 becomes conducting state, input end T and data line 15 are electrically connected.Supply with data-signal X[j from data line 15 to the input end T of phase inverter 34 like this] current potential Vdata, the electric charge corresponding with this current potential Vdata is kept in the capacity cell 33.As shown in Figure 2, because the reference signal W[i that supplies with to the second electrode E2 of capacity cell 33], Pa[i between the first phase] in keep constant potential (current potential VH), so current potential Va of input end T remains and the corresponding current potential Vdata of the gray scale of unit circuit U.
(b) second phase Pb[i]
Pa[i between the first phase] through and sweep signal Y[i] when becoming low level, because transistor 31 is transferred to cut-off state, so input end T and data line 15 are by the electricity disconnection and become suspension (floating) state.At second phase Pb[i] in also keep this state.Therefore, if to the reference signal W[i that the second electrode E2 of capacity cell 33 supplies with] at second phase Pb[i] produce change in the inherent scope till from current potential VH to current potential VL, then because of the capacitive coupling in the capacity cell 33, the current potential Va (current potential of the first electrode E1) that makes input end T is from Pa[i between the first phase before] the current potential Vdata that sets only produces reference signal W[i] the change of variable quantity.
Fig. 4 is the sequential chart of the relation between the current potential Va of expression input end T and the drive current Sdr that exports from phase inverter 34.In the figure, put down in writing simultaneously in unit circuit U and to have specified each gray scale (waveform of the current potential Va during G0～G3).And current potential V0～V3 of this figure is the data-signal X[j when specifying each gray scale G0～G3 respectively] current potential Vdata (Pa[i between the first phase] set current potential Va).
As shown in Figure 4, the current potential Va of input end T is along with second phase Pb[i] in reference signal W[i] change only change Δ V (=VH-VL).At second phase Pb[i] initial point, because current potential Va is set to and the corresponding current potential Vdata of gray scale, therefore second phase Pb[i] in the current potential Va of input end T be lower than phase inverter 34 threshold voltage vt h during (below be called " during the driving "), become Pa[i between the first phase before it] in long with the corresponding time of supplying with from data line 15 of current potential Vdata.For example, because the current potential Vdata (V1) corresponding with gray scale G1 is than current potential Vdata (V2) the higher current potential corresponding with gray scale G2, therefore when specifying gray scale G2 current potential Va to be lower than time of threshold voltage vt h long, the time that is lower than threshold voltage vt h than current potential Va when the appointment gray scale G1 is longer.In addition, under the situation of specifying gray scale G0, current potential Va is at second phase Pb[i] whole during in above threshold voltage vt h.
Because the current potential Va of input end T is according to above such change that produces, therefore with data-signal X[j] during the driving of corresponding time long (pulse width) in from phase inverter 34 to electrooptic element 35 supply drive current Sdr, in during remaining, stop the supply of the drive current Sdr of electrooptic element 35 correspondences.For example, as shown in Figure 4, when specifying gray scale G2, during electrooptic element 35 is supplied with the driving of drive current Sdr, than longer during the driving of when specifying gray scale G1, supplying with drive current Sdr.And, under the situation of specifying gray scale G0, at second phase Pb[i] whole interval in, stop supply to the drive current Sdr of electrooptic element 35 correspondences.Because electrooptic element 35 is luminous because of the supply of drive current Sdr, therefore become in the present embodiment electrooptic element 35 with data-signal X[j] the corresponding time density of current potential Vdata luminous.Like this, the gray scale of electrooptic element 35 is by each unit circuit U Be Controlled.
More than although understand the action of a unit circuit U, but in the constituent parts circuit, carry out same action with behavior unit.More particularly, as shown in Figure 2, to the supply of the current potential Vdata of input end T (Pa[i between the first phase]) and reference signal W[i] and the change of corresponding current potential Va (second phase Pb[i])) be performed successively by another sequential by each unit circuit U of each row.Therefore, Pa[i between the first phase] in, in a unit circuit U, be taken into data-signal X[j] time (when supplying with current potential Vdata) to input end T, need not wait for the data-signal X[j of other constituent parts circuit U correspondence] be taken into, and electrooptic element 35 is driven successively.In other words, from data-signal X[j] the unit circuit U after the end of being taken into begin electrooptic element 35 and come luminous successively.
According to above illustrated, in present embodiment, because according to the supply of drive current Sdr with stop and electrooptic element 35 two-values are driven, therefore will compare to the structure that the electric current (the perhaps voltage that applies to electrooptic element 35) that electrooptic element 35 is supplied with is controlled interimly with corresponding each gray scale, and can reduce the influence of the deviation of the characteristics of transistor that constitutes electrooptic element 35 or phase inverter 34.And then, in the present embodiment, owing to directly set the current potential of the second electrode E2 of capacity cell 33 by reference signal line 19, so can set the current potential of each electrode of capacity cell 33 at short notice.
And, according to present embodiment, compare with the structure in the past that other setting is supplied with between scan period of data-signal light emission period luminous with making all OLED elements to all unit circuit, can guarantee for a long time each electrooptic element 35 luminous during.Therefore, can make each electrooptic element 35 luminous with enough brightness.And, compare with structure in the past, because it is longer to set the pulse width of drive current Sdr, therefore can avoid concentrated (supply of needle pattern electric current) to the immediate current of electrooptic element 35, suppress the deterioration in characteristics of electrooptic element 35.
(B: second embodiment)
Then, describe about second embodiment of the present invention.In addition, about with present embodiment in the same key element additional phase of first embodiment with symbol, and suitably omit separately detailed description.
Fig. 5 is the circuit diagram of the structure of the unit circuit U of the electronic installation D in the expression present embodiment.As shown in the figure, the unit circuit U of present embodiment constitutes by increase the transistor 37 of n channel-type in the structure of illustrated first embodiment of Fig. 3.This transistor 37 is on-off elements of controlling between the input end T of phase inverter 34 and output terminal and to both electrical connections (conducting and non-conduction).
The grid of transistor 37 and is supplied with reset signal R[i] wiring be connected.Reset signal R[i], at sweep signal Y[i] become Pa[i between first phase of high level] and before the beginning during in become high level, beyond this during in keep low level signal.That is reset signal R[1 ,]～reset signal R[m] the selecteed order of Yi Gehang becomes high level successively.
In above structure, at reset signal R[i] when becoming high level, transistor 37 is transferred to conducting state, with the input end T and the output terminal electrical connection of phase inverter 34.Therefore, the input end T of phase inverter 34 and output terminal both sides' current potential become the difference (Vdd-Vth_P) between the threshold voltage vt h_P of transistor 341 of power supply potential Vdd and p channel-type.According to Pa[i between the first phase like this] be set at setting by current potential Va before with input end T, thereby have Pa[i between the first phase] in can be rapidly and definitely the current potential Va of input end T is set at the advantage of current potential Vdata.And, because the current potential between the output terminal of electrooptic element 35 and phase inverter 34 is initialized as setting, therefore can be with the needed time homogenising of the response of electrooptic element 35 in a plurality of unit circuit U.
(C: variation)
In each above technical scheme, can add various distortion.If the concrete deformation technology scheme of illustration is then as follows.In addition, also can suitably make up following each technical scheme.
(1) variation 1
In each embodiment, though illustration with second phase Pb[i] in reference signal W[i] as the triangle wave structure, suitably changed second phase Pb[i] and in reference signal W[i] waveform.For example, in each embodiment, though illustration with second phase Pb[i] mid point tc be the reference signal W[i that benchmark and waveform are the line symmetry], do not need reference signal W[i among the present invention] symmetry.For example, with oblique wave or sawtooth wave (sawtooth wave) or many oblique waves various waveform application such as (staircase waveforms) in second phase Pb[i] in reference signal W[i] in.And the waveform that changes of current potential straight line not only can also be with the waveform application of curvilinear motions such as sine wave in second phase Pb[i] in reference signal W[i].
And, in each embodiment, though illustration reference signal W[i] at second phase Pb[i] and in become the structure of waveform in 1 cycle of triangular wave, also can will make triangular wave or a plurality of various units waveforms such as oblique wave illustrated above or sawtooth wave at second phase Pb[i] in continuous waveform (promptly on time shaft, arranging the waveform of a plurality of units waveform) according to the mode of rising that repeats repeatedly current potential and decline be applied to reference signal W[i].Like this, in the present invention, can suitably be chosen in second phase Pb[i according to the drive form of electrooptic element 35 or function etc.] in produce the reference signal W[i of change along with the time through current potential simultaneously]
And then, in each embodiment, though illustration at second phase Pb[i] when beginning, the current potential Va of input end T is since Pa[i between the first phase] in the structure that changes of current potential Vdata, but also can be according at second phase Pb[i] initial point and the current potential Va of terminal point input end T produce the mode selected reference signal W[i of change] waveform.For example, also can utilize reference signal W[i as illustrated in Figure 6].The reference signal W[i of this figure], be at second phase Pb[i] the initial point current potential variable quantity Vd that only rises, and at second phase Pb[i] the terminal point current potential variable quantity Vd that only descends, and from second phase Pb[i] initial point till to terminal during, in the scope of voltage Δ V, descend and rise with the same voltage of first embodiment.The current potential Va of input end T is according to this reference signal W[i] waveform generation change.That is, as shown in Figure 6, current potential Va is the first, at second phase Pb[i] initial point begin the variable quantity Vd that only rises from current potential Vdata; The second, the variation delta V that only descends in the interval till from initial point to mid point tc, and, at the variation delta V that only rises from the interval of mid point tc till to terminal; The 3rd, at second phase Pb[i] the terminal point Vd that only descends, become current potential Vdata.In this structure, also same with each embodiment, with data-signal X[i] in the corresponding time is long, output driving current Sdr from phase inverter 34.
(2) variation 2
The concrete structure of unit circuit U is not the illustration that is defined in Fig. 3.For example, each transistorized conductivity type can change arbitrarily according to the illustration of Fig. 3.In addition, though in each embodiment illustration with the direct-connected structure of anode of the output terminal and the electrooptic element 35 of phase inverter 34, but as shown in Figure 7, also can be connected with the output terminal of phase inverter 34 and constitute by grid with the transistor 39 of n channel-type.This transistor 39 is the mechanisms that are used to generate drive current Sdr, is inserted between the anode of the power lead of supply power current potential Vdd and electrooptic element 35.Become conducting state at transistor 341, and during from phase inverter 34 out-put supply current potential Vdd, transistor 39 is transferred to conducting state.At this moment, there have drive current Sdr to flow in the electrooptic element 35 to be also luminous.On the contrary, from phase inverter 34 output earthing potential Vss the time, because transistor 39 becomes cut-off state, therefore stop the supply of electric current, electrooptic element 35 is turned off the light.Also can realize effect and the effect same by such structure with each embodiment.
And, be used for mechanism's (driving mechanism of the present invention) of output driving current Sdr, be not to be defined in phase inverter 34.For example, replace the phase inverter 34 of Fig. 3, Fig. 5 and Fig. 7, the current potential Va of comparison input end T and the current potential of regulation also can be set, and will with this comparer of exporting of corresponding driving electric current Sdr as a result.This comparer, when for example current potential Va is lower than the current potential of regulation, out-put supply current potential Vdd, and when current potential Va surpasses the current potential of regulation, output earthing potential Vss.Also can realize effect and the effect same by this structure with each embodiment.In addition, giving electrooptic element 35 signal supplied, both can be that current signal (the illustrated drive current Sdr of each embodiment) also can be a voltage signal.According to above illustrated, driving mechanism among the present invention, as long as will be corresponding with the current potential Va of input end T the key element of drive signal (drive current Sdr and driving voltage) output of (more particularly and between current potential Va and the regulation current potential big or small corresponding), regardless of structure more specifically how.
(3) variation 3
In each embodiment, though illustration according to many sweep traces 13 respectively the mode of corresponding (both by every row) form the structure of reference signal line 19, the corresponding relation between sweep trace 13 and the reference signal line 19 is not to be defined in this.For example, its structure also can be to form reference signal line 19 according to the mode of dividing each group behind the m root sweep trace 13 corresponding to radical in accordance with regulations, and each reference signal line 19 is connected with the constituent parts circuit U that belongs to a group.In this structure, data-signal X[i] be taken into, carry out by every row, on the other hand, according to reference signal W[i] change by every group of change of carrying out electrooptic element 35.
(4) variation 4
In second embodiment, though illustration between the first phase Pa[i] structure that before the input end T of phase inverter 34 is electrically connected with its output terminal, the linking objective of the input end T of phase inverter 34 can suitably change.For example, it also can be the structure that between the input end T of the wiring of keeping the regulation current potential and phase inverter 34, gets involved transistor 37, Pa[i between the first phase] before by making transistor 37 become conducting state, thus the input end T of phase inverter 34 is initialized as the structure of regulation current potential.
(5) variation 5
In above technical scheme, though illustration the OLED element as electrooptic element 35, the electrooptic element that adopts in the electronic installation of the present invention is not to be defined in this.For example, replace the OLED element, also can utilize inorganic EL element, field to cause (field)/emission (emission) (FE) element, surface conduction type emission (SE:Surface-conduction Electron-emitter) element, ballistic electron emission (BS:Ballistic electron Surface emitting) element, so various self-emission devices and the various electrooptic elements such as electrophoresis element or electroluminescent cell of LED (LightEmitting Diode, light emitting diode) element.In addition, the present invention also is applied in the sensing devices such as biochip.So-called driven element of the present invention is to comprise because of driven all key elements of giving of electric flux, and electrooptic elements such as light-emitting component are the illustration of driven element only.
(A. the 3rd embodiment)
Fig. 8 is the block diagram of the structure of the electronic installation in expression the 3rd embodiment of the present invention.The illustrated electronic installation D of this figure, be as be used for display image equipment at the adopted electrooptic element of various e-machines, comprising: a plurality of unit circuit U are arranged in planar element arrays portion 10; Be used for scan line drive circuit 23 and signal-line driving circuit 25 that the constituent parts circuit U is driven; With the voltage control circuit 27 that is used for to constituent parts circuit U service voltage A.In addition, so-called scan line drive circuit 23, signal-line driving circuit 25 and voltage control circuit 27, both can be installed among the electronic installation D as other circuit respectively, also part or all of these circuit can be installed among the electronic installation D as single circuit.
As shown in Figure 8, in element arrays portion 10, form the m root sweep trace 13 extend in directions X, extend in the n root signal wire (data line) 15 (m and n are natural numbers) with the Y direction of directions X quadrature.The constituent parts circuit U, be configured in sweep trace 13 and signal wire 15 between intersect corresponding position.Therefore, these unit circuits U, be configured to vertical m capable * horizontal n row rectangular.
In element arrays portion 10, form with each sweep trace 13 be to and extend in the m root voltage supply line 17 of directions X.These voltage supply lines 17 are connected with the lead-out terminal of voltage control circuit 27 is public.Therefore, the voltage A from voltage control circuit 27 outputs supplies with to a plurality of unit circuit U jointly via each voltage supply line 17.
Fig. 9 is the sequential chart that is used to illustrate the action of electronic installation D.As shown in the figure, in the present embodiment, a frame (1F) is divided into writes period P wrt and drive period P drv.In addition, in the present embodiment, though illustration write time of period P wrt and long grown up consistent approximately situation with the time that drives period P drv, respectively the ratio grown can change arbitrarily the time during.
As shown in Figure 9, voltage control circuit 27, the voltage A with each voltage supply line 17 in writing period P wrt is set at magnitude of voltage Vss, is set at magnitude of voltage Vdd in the driving period P drv after it.Magnitude of voltage Vss in the present embodiment is the current potential (earthing potential) that becomes the benchmark of each several part voltage.Magnitude of voltage Vdd is than the magnitude of voltage Vss voltage of noble potential (for example high-order side of power supply potential) more.
The scan line drive circuit 23 of Fig. 8 is to be used in writing period P wrt the circuit that in accordance with regulations order is selected each root (selecting a plurality of unit circuit U with behavior unit) of m root sweep trace 13 successively.Describe in further detail, as shown in Figure 9, scan line drive circuit 23 is created on the sweep signal S[1 that becomes high level in each horizontal scan period (1H) that writes in the period P wrt successively]～S[m] and to each sweep trace 13 output.The sweep signal S[i that supplies with to the sweep trace 13 of i capable (i is for satisfying the integer of 1≤i≤m)], be to become high level in i the horizontal scan period (1H) in writing period P wrt; Keep low level signal in (comprising and drive period P drv) during beyond this.Sweep signal S[i] to the transfer of high level, be meant that to have selected i capable.
On the one hand, the signal-line driving circuit 25 of Fig. 8 is supplied with signal D[1 via each signal wire 15 respectively to sweep trace 13 corresponding 1 row (n) the unit circuit U that select with scan line drive circuit 23]～D[n].As shown in Figure 9, to the signal wire 15 signal supplied D[j of j row (j is for satisfying the integer of 1≤j≤n)], be in writing period P wrt, to become data voltage Vdata; In driving period P drv, become the voltage signal of control voltage Vctl.
As shown in Figure 9, data voltage Vdata changes by each horizontal scan period successively according to specified gray scale (brightness) in the constituent parts circuit U.Signal D[j is described in further detail] data voltage Vdata, in i the horizontal scan period in writing period P wrt, become and belonging to the capable j of the i specified gray scale corresponding voltage value in the circuit U of itemizing.The gray scale of constituent parts circuit U is specified by the gradation data of supplying with from the outside.
On the other hand, control voltage Vctl, magnitude of voltage changes as time passes in driving period P drv.Control voltage Vctl in the present embodiment, be till from the mid point tc that drives period P drv (promptly apart from the moment that the initial point that drives period P drv and terminal point both sides grow the identical time) to initial point waveform and from the waveform of mid point tc till to terminal, be that benchmark is line symmetrical triangular ripple with this mid point tc.Promptly, as shown in Figure 9, control voltage Vctl, from the initial point that drives period P drv to mid point tc, from magnitude of voltage VL to than its rising along with the time till the magnitude of voltage VH of noble potential more through straight line simultaneously, and then reduce along with the effluxion straight line and arrival magnitude of voltage VL from mid point tc to terminal, from magnitude of voltage VH.
Then, with reference to Figure 10, the concrete structure of constituent parts circuit U is described.In addition, in the figure, though only illustrate a unit circuit U who is positioned at the capable j row of i, other unit circuit U also is same structure.
As shown in figure 10, unit circuit U comprises electrooptic element 11, driving transistors Tdr, transistor T 1 and capacity cell C.Wherein electrooptic element 11, are the key element that becomes driven object in electronic installation D (below be called " driven element ").The electrooptic element 11 of present embodiment is with the corresponding luminous current drive illuminant element of brightness of the electric current that is supplied to it (below be called " drive current ").In the present embodiment, as electrooptic element 11, the OLED element of luminescent layer between anode and negative electrode that employing will be made up of organic EL (ElectroLuminescent) material.The negative electrode of the electrooptic element 11 in the constituent parts circuit U is by common ground (magnitude of voltage Vss).Electrooptic element 11 is by applying above the forward voltage of threshold voltage vt h_EL and luminous.
The driving transistors Tdr of Figure 10 is to be used for n channel transistor that the current value of drive current is controlled.More particularly, driving transistors Tdr produces to change and generates the drive current I1 that has with the corresponding size of current of grid voltage Vg according to the voltage of grid (below be called " grid voltage ") Vg according to the electric conducting state between source electrode and the drain electrode.Therefore, electrooptic element 11 is to be driven with the corresponding brightness of the conducting state of driving transistors Tdr (that is, with the corresponding brightness of grid voltage Vg).
In addition, in the present embodiment, because the height of each magnitude of voltage of the source electrode of driving transistors Tdr and drain electrode reverses successively, therefore on the meaning of strictness, the drain electrode of driving transistors Tdr and source electrode are replaced at random.Therefore, below, being benchmark at height via each terminal voltage of the driving transistors Tdr of driving transistors Tdr when electrooptic element 11 is supplied with drive current I1, for convenience of description, and the terminal of 11 sides of the electrooptic element among driving transistors Tdr note is done " source electrode (S) ", and its terminal note of opposition side is done " drain electrode " D " "
This driving transistors Tdr is between electrooptic element 11 and voltage supply line 17.That is, the drain electrode of driving transistors Tdr is connected with voltage supply line 17, and its source electrode is connected with the anode of electrooptic element 11.The source electrode of driving transistors Tdr directly is connected with electrooptic element 11.That is, to the path of the drive current 11 of the anode of electrooptic element 11, do not get involved any on-off element at source electrode from driving transistors Tdr.
Transistor T 1 is the transistor between the n channel-type of controlling between the source electrode of driving transistors Tdr and the drain electrode and to both electrical connection.The grid of this transistor T 1 is connected with sweep trace 13.Therefore, at sweep signal S[i] keep high level during in (i horizontal scan period), transistor T 1 is transferred to conducting state, driving transistors Tdr is connected by diode, at sweep signal S[i] when being transferred to low level, transistor T 1 becomes cut-off state, and the diode connection of driving transistors Tdr is disengaged.
As shown in figure 10, capacity cell C comprises the opposed first electrode Ea and the second electrode Eb and the dielectric in two gaps between electrodes mutually.The first electrode Ea is connected with the grid of driving transistors Tdr.The second electrode Eb is connected with signal wire 15.This capacity cell C, be used to keep and the first electrode Ea and the second electrode Eb between the mechanism of potential difference (PD) (being the potential difference (PD) between the grid of signal wire 15 and driving transistors Tdr) corresponding charge.
Then, with reference to Figure 11 and Figure 12 the concrete action of electronic installation D is described.Below, be divided into and write period P wrt and drive period P drv, describe belonging to the itemize action of a circuit of the capable j of i.
(a) write period P wrt (Figure 11)
In writing period P wrt at sweep signal S[i] when being transferred to high level, transistor T 1 becomes conducting state, and the source electrode of driving transistors Tdr and grid are electrically connected (diode is connected).On the other hand, in writing period P wrt, the voltage A of voltage supply line 17 keeps magnitude of voltage Vss.Promptly, because it is lower than the magnitude of voltage of the source electrode of driving transistors Tdr or grid that the voltage A of voltage supply line 17 becomes, therefore in writing period P wrt, as shown in figure 11, electric current I 0, after the order circulation of the grid of driving transistors Tdr, flow in the voltage supply line 17 with the source electrode of transistor T 1 and driving transistors Tdr and drain electrode.
In the present embodiment, according to the threshold voltage vt h_EL of electrooptic element 11 mode bigger than the threshold voltage vt h_TR of driving transistors Tdr, structure or the material of selected electrooptic element 11 and driving transistors Tdr.That is, the voltage of the source electrode of driving transistors Tdr (Vss+Vth_TR) in writing period P wrt is lower than the threshold voltage vt h_EL of electrooptic element 11.Therefore, in writing period P wrt, do not have electric current to flow through in the electrooptic element 11, electrooptic element 11 is turned off the light like this.
According to above when in driving transistors Tdr, having electric current I 0 to flow through, the grid voltage Vg of driving transistors Tdr (the in other words voltage of the first electrode Ea), at sweep signal S[i] keep in the horizontal scan period of high level, converge on the additive value (Vss+Vth_TR) between the threshold voltage vt h_Tr of magnitude of voltage Vss and driving transistors Tdr.On the other hand, in this horizontal scan period, supply with signal D[j to the first electrode Ea] data voltage Vdata.Still keep such voltage relationship at horizontal scan period process and sweep signal S[i] when being transferred to low level, transistor T 1 becomes cut-off state, and the first electrode Ea of capacity cell C becomes suspended state.Therefore, at sweep signal S[i] be transferred to the first electrode Ea (Vss+Vth_TR) in the low level moment and the potential difference (PD) between the second electrode Eb (Vdata) is stored among the capacity cell C.
In writing period P wrt, be used for to be stored in the action of capacity cell C with data voltage Vdata and threshold voltage vt h_TR corresponding charge like that, about walking to the capable constituent parts circuit U of n successively repeatedly by each horizontal scan period from i according to above.
(b) drive period P drv (Figure 12)
In driving period P drv, because sweep signal S[1]～S[m] keep low level, so the transistor T 1 of all unit circuit U becomes cut-off state, and the diode of driving transistors Tdr connected removes.Therefore, the first electrode Ea of the capacity cell C among all unit circuit U keeps suspended state.On the other hand, in driving period P drv, voltage control circuit 27 is maintained magnitude of voltage Vdd with the voltage A of voltage supply line 17.
In above situation,, supply with in time via each signal wire 15 and to pass and mutagenic control voltage Vctl to the second electrode Eb of the capacity cell C of constituent parts circuit U.At this because the first electrode Ea becomes suspended state, so grid voltage Vg of driving transistors Tdr (i.e. the voltage of the first electrode Ea), the capacitive coupling that produces because of capacity cell C, and only changing and the variation in voltage correspondent voltage value Δ V of the second electrode Eb.About the change in voltage of this first electrode Ea and the relation between the drive current I1, be described in detail as follows.
At first, in case the control voltage Vctl that in driving period P drv, applies to the second electrode Eb, become than at before the higher current potential of data voltage Vdata that applies in the period P wrt that writes, the grid voltage Vg of driving transistors Tdr (voltage of the first electrode Ea) then, from the magnitude of voltage of setting in writing period P wrt (Vss+Vth_TR), only rising is equivalent to control the magnitude of voltage Δ V of the difference between voltage Vctl and the data voltage Vdata.At this moment, because driving transistors Tdr becomes conducting state, therefore as shown in figure 12, drive current I1 is supplied with to electrooptic element 11 via driving transistors Tdr from voltage supply line 17.And, make electrooptic element 11 luminous by the supply of this drive current I1.
On the other hand, if the control voltage Vctl that in driving period P drv, applies to the second electrode Eb, become than at before the lower current potential of data voltage Vdata that period P wrt applies that writes, the grid voltage Vg of driving transistors Tdr then, only descending from the magnitude of voltage of setting in writing period P wrt (Vss+Vth_TR) is equivalent to the magnitude of voltage Δ V of the difference between data voltage Vdata and the control voltage Vctl.At this moment because driving transistors Tdr, become cut-off state (nonconducting state), therefore will be from voltage supply line 17 to electrooptic element 11 path cut off, electrooptic element 11 is turned off the light.
Like this, the driving transistors Tdr of the constituent parts circuit U in driving period P drv, control voltage Vctl become than data voltage Vdata more noble potential during in become conducting state, control voltage Vctl become than data voltage Vdata more electronegative potential during in become cut-off state.That is, the electrooptic element 11 of constituent parts circuit U, the corresponding time of the magnitude of voltage in driving period P drv with data voltage Vdata long during in luminous, and in the remaining period of this driving period P drv, turn off the light.Therefore, each electrooptic element 11 is controlled as and the corresponding gray scale of data voltage Vdata (driving the brightness integrated value among the period P drv) (gray-scale Control of carrying out because of pulse-length modulation)
According to above illustrated, in the present embodiment, the grid voltage Vg of driving transistors Tdr is set to and threshold voltage vt h_TR correspondent voltage value in writing period P wrt.In other words, driving transistors Tdr is no matter the height of threshold voltage vt h_TR how, can both be transferred to being forced to property the boundary condition between conducting state and the nonconducting state.Therefore, the driving transistors Tdr that drives among the period P drv becomes conducting state, supplies with time of drive current I1 to electrooptic element 11 and longly determines according to data voltage Vdata, and do not rely on the threshold voltage vt h_TR of driving transistors Tdr.That is,, can compensate, electrooptic element 11 is controlled to be desirable gray scale with very high precision to the error of the threshold voltage vt h_TR of driving transistors Tdr (with design load different) according to present embodiment.
And, in the present embodiment, included transistorized ading up to " 2 " among the unit circuit U.Therefore, with compensate for deviation the threshold voltage of driving transistors Tdr, and have 3 transistors at least in each unit circuit is that the structure of indispensable patent documentation 1 is compared, can realize the simplification of structure of electronic installation D or the reduction of manufacturing cost, and then the aperture opening ratio ratio of the zone of the radiating light outgoing of electrooptic element 11 (in the zone that unit circuit U distributes from) of constituent parts circuit U is increased.
Yet, as each transistor (especially driving transistors Tdr) of component unit circuit U, can adopt thin film transistor (TFT) that for example in the material of semiconductor layer, adopts polycrystal silicon/micro-crystallization silicon/single crystal silicon or amorphous silicon or the transistor that forms by piece silicon (bulk silicon).Especially semiconductor layer is by the formed transistor of amorphous silicon in these transistors, and known if wherein the sense of current that flows is fixed all the time, then threshold voltage can produce change as time passes.
Under the structure of present embodiment, with drive current I1 in driving period P drv from the drain electrode of driving transistors Tdr to the source electrode flowing opposite, electric current I 0 flows to drain electrode from source electrode as shown in Figure 1 in writing period P wrt.That is, the sense of current that flows in driving transistors Tdr is writing period P wrt and is driving in the period P drv opposite.Therefore,, in driving transistors Tdr, adopt under the structure of the thin film transistor (TFT) that semiconductor layer is made up of amorphous silicon, can suppress the change of passing in time of its threshold voltage vt h_TR according to present embodiment.
(B: the 4th embodiment)
Then, describe at the 4th embodiment of the present invention.
In the 3rd embodiment, thereby illustration in writing period P wrt, be reduced to Vss and produce electric current I 0 by the voltage A that makes voltage supply line 17, make the grid voltage Vg of driving transistors Tdr be converged in structure with threshold voltage vt h_TR correspondent voltage value (Vss+Vth_TR) like this.Yet, at the accidental magnitude of voltage Vss that is reduced to of the source voltage that causes driving transistors Tdr because of some interference such as noises when following, can not produce electric current I 0 even if make voltage A drop to magnitude of voltage Vss yet, its result might not converge to and threshold voltage vt h_TR correspondent voltage value by grid voltage Vg.In order to solve such problem, in the present embodiment, its structure is, with the source voltage of driving transistors Tdr, and the mandatory magnitude of voltage that can produce electric current I 0 that is set at.In addition, about the key element same with the 3rd embodiment in the present embodiment, additional common respectively symbol also suitably omits explanation.
Figure 13 is the circuit diagram of the structure of the unit circuit U in the expression present embodiment.As shown in the figure, the unit circuit U of present embodiment also comprises the transistor T 2 of p channel-type except that each key element of Figure 10.This transistor T 2, be the mechanism that is used for the voltage Vn of the tie point N between driving transistors Tdr and the electrooptic element 11 (anode of the source electrode of driving transistors Tdr or electrooptic element 11) is set at magnitude of voltage Vdd, be inserted between tie point N and the voltage supply line 17.The grid of transistor T 2 is connected in pairs and with the reseting signal line 141 that extends in directions X with sweep trace 13.Supply with common reset signal RSa from scan line drive circuit 23 to the reseting signal line 141 of each row.But, the circuit that generates reset signal RSa and export to each reseting signal line 141 also can be arranged with scan line drive circuit in 23 minutes.
Then, Figure 14 is the sequential chart of the action of the electronic installation D in the expression present embodiment.As shown in the figure, a frame (1F) also comprises writing period P wrt initialization period P rs1 before except that writing period P wrt and driving period P drv.The voltage A of each voltage supply line 17 is set to magnitude of voltage Vss in writing period P wrt, be set to magnitude of voltage Vdd in initialization period P rs1 and driving period P drv.
Reset signal RSa to each reseting signal line 141 is supplied with becomes low level in initialization period P rs1, (write period P wrt or drive period P drv) keeps high level during beyond this.And scan line drive circuit 23 makes all sweep signal S[1 in initialization period P rs1]～S[m] be transferred to high level together.Sweep signal S[1 in writing period P wrt or driving period P drv]～S[m], same with first embodiment.
Figure 15 is the circuit diagram of the apperance of a unit circuit U among the expression initialization period P rs1.As shown in the figure, in initialization period P rs1, transistor T 1 is because of the sweep signal S[i of high level] keep conducting state, transistor T 2 is kept conducting state because of low level reset signal RSa simultaneously.That is, the grid of tie point N and driving transistors Tdr is electrically connected with voltage supply line 17 via transistor T 2.At this moment the voltage A of voltage supply line 17 is set to magnitude of voltage Vdd.Therefore, in initialization period P rs1, as shown in figure 15, the being forced to property of grid voltage Vg of the voltage Vn of tie point N and driving transistors Tdr is set at magnitude of voltage Vdd.Initialization period P rs1, because transistor T 1 and transistor T 2 become conducting state, it is long that the voltage Vn that therefore is set to tie point N arrives the required time enough of magnitude of voltage Vdd.
Action in writing period P wrt and driving period P drv, same with the 3rd embodiment.According to present embodiment, among the initialization period P rs1 before writing period P wrt, because the voltage Vn of tie point N, be set to than the magnitude of voltage Vdd of noble potential more of the additive value between the threshold voltage vt h_TR of magnitude of voltage Vss that writes the voltage supply line 17 among the period P wrt and driving transistors Tdr, even therefore voltage Vn is reduced to below the magnitude of voltage Vss before initialization period P rs1, electric current I 0 also can suitably flow to voltage supply line 17 from driving transistors Tdr in writing period P wrt.Therefore, according to present embodiment, except that with the same effect of first embodiment, can also obtain to reduce the influence that noise etc. disturbs, realize the effect of stable action.
In addition, in initialization period P rs1, because the magnitude of voltage (Vdd) of voltage Vn surpasses threshold voltage vt h_EL, so electrooptic element 11 is luminous.Yet if make the time of initialization period P rs1 long compare enough weak points with writing period P wrt or drive period P drv, the luminous of electrooptic element 11 at this initialization period P rs1 can exert an influence to the gray scale that the observer saw in fact hardly so.In addition, though in the present embodiment illustration initialization period P rs1 is set at situation about respectively writing before the period P wrt, the moment of initialization period P rs1 is arbitrarily.For example, also can initialization period P rs1 be set every a plurality of frames, and with voltage Vn initialization.
And as shown in figure 16, its structure also can be, from moment of rising to high level at initialization period P rs1 to till the terminal point of first horizontal scan period drops to the low level moment, sweep signal S[i] keep high level.Being maintained at the quantity of electric charge among the capacity cell C of the capable unit circuit U of i, at sweep signal S[i] moment (i.e. the terminal point of i horizontal scan period) after dropping to low level determined.Therefore, even if according to as shown in figure 16 driving method, also can be same with the 3rd embodiment or present embodiment, the error of compensation threshold voltage vt h_TR also is controlled to be the corresponding gray scale with data voltage Vdata with electrooptic element 11.In addition,, compare, make sweep signal S[i owing to cut down with the method for Figure 14 according to the method for Figure 16] the number of times of level variation, therefore have the advantage that can reduce the power that scan line drive circuit 23 consumed.On the other hand, method according to Figure 14, owing to can make at each initialization period P rs1 and write sweep signal S[i among the period P wrt] pulsewidth be same value in whole provisional capital, therefore have and will be used to generate sweep signal S[i] the advantage that simplifies the structure.
(C: the 5th embodiment)
Then, describe at the 5th embodiment of the present invention.
In the 4th embodiment, illustration because the voltage Vn of tie point N is set at magnitude of voltage Vdd, so voltage supply line 17 is by the structure of dual-purpose.On the contrary, in the present embodiment, by making tie point N and be different from the wiring conducting of voltage supply line 17, thereby with the mandatory setting that is set at of voltage Vn.In addition, about the key element identical with the 3rd embodiment in the present embodiment, additional common respectively symbol also suitably omits explanation.
Figure 17 is the circuit diagram of the structure of the unit circuit U in the expression present embodiment.Same with the 4th embodiment, the unit circuit U of present embodiment comprises the transistor T 2 that is used for the voltage Vn of tie point N is set at setting (being Vdd at this).This transistor T 2 is inserted between tie point N and the supply lines 18.Supply lines 18, be with sweep trace 13 be to and extend in the wiring of directions X.The voltage of the supply lines 18 of each row is fixed as magnitude of voltage Vdd all the time by voltage control circuit 27.In addition, its structure also can be, is arranged in 27 minutes to the circuit and the voltage control circuit of supply lines 18 service voltages (Vdd).The grid of transistor T 2 is connected with reseting signal line 141 equally with the 4th embodiment.
Figure 18 is the sequential chart of action that is used to illustrate the electronic installation D of present embodiment.Same with the 4th embodiment, the frame (1F) in the present embodiment except that writing period P wrt and driving the period P drv, also comprises writing period P wrt initialization period P rs1 before.The voltage A of each voltage supply line 17 is set to magnitude of voltage Vdd in driving period P drv, at initialization period P rs1 and write and be set to magnitude of voltage Vss among the period P wrt.On the other hand, sweep signal S[i] and the waveform of reset signal RSa identical with the 4th embodiment (Figure 14).But, also can adopt the sweep signal S[1 of the illustrated waveform of Figure 16]～S[m]
Figure 19 is the circuit diagram of apperance that is illustrated in the unit circuit U of initialization period P rs1.As shown in the figure, be transferred to conducting state as if transistor T 1 in initialization period P rs1 and transistor T 2, then tie point N is electrically connected with supply lines 18 via transistor T 2 with the grid of driving transistors Tdr.Because the voltage of this supply lines 18 is fixed to magnitude of voltage Vdd, therefore at initialization period P rs1, as shown in figure 19, with the voltage Vn of tie point N and the mandatory magnitude of voltage Vdd that is set at of grid voltage Vg of driving transistors Tdr.Therefore, even also can realize the effect same with the 4th embodiment according to present embodiment.
In addition, in the present embodiment, the voltage A of the voltage supply line 17 of initialization period P rs1 can be set at magnitude of voltage Vss.Different with the 4th embodiment, be to separate formation with voltage supply line 17 because be used for tie point N being set at the supply lines 18 of magnitude of voltage Vdd at initialization period P rs1.According to so in the present embodiment,, therefore can not supply with drive current I1 to electrooptic element 11 at initialization period P rs1 owing to be set to magnitude of voltage Vss (with reference to Figure 19) at initialization period P rs1 voltage supply line 17.In other words, as shown in figure 18, at the terminal point that drives period P drv, because of the voltage A of voltage supply line 17 is reduced to magnitude of voltage Vss, so that electrooptic element 11 stops is luminous.Therefore, according to present embodiment, even compare with the 4th embodiment that electrooptic element 11 also can be luminous in initialization period P rs1, advantage is, can with high precision stipulate each electrooptic element 11 luminous during, and it is controlled at desirable gray scale respectively.But, according to the 4th embodiment because because of the voltage Vn with tie point N is set at magnitude of voltage Vdd, thus voltage supply line 17 by dual-purpose, so do not need voltage Vn initialization special-purpose supply lines 18.Therefore, has the advantage that simplifies the structure with unit circuit U.
(D: the 6th embodiment)
Then, describe at the 6th embodiment of the present invention.
Under the structure of the 3rd embodiment, in that to write period P wrt remaining always before being stored in the initial point that writes period P wrt of electric charge at its next frame among the capacity cell C.Therefore, in some cases, at the quantity of electric charge (perhaps grid voltage Vg) that writing of certain frame is stored among the period P wrt among the capacity cell C, can be subjected to before it frame write the influence that is stored in the quantity of electric charge among the capacity cell C among the period P wrt.Therefore, in the present embodiment, its structure is, before writing period P wrt, with the mandatory setting that is set at of the grid voltage Vg of driving transistors Tdr.In addition, about additional phase symbol and the suitably omission explanation together respectively of the key element identical in the present embodiment with first embodiment.
Figure 20 is the circuit diagram of the structure of the unit circuit U in the expression present embodiment.As shown in the figure, the unit circuit of present embodiment also comprises the transistor T 3 of p channel-type except that each key element of Figure 10.This transistor T 3 is the mechanisms that are used for the grid voltage Vg of driving transistors Tdr is set at magnitude of voltage Vdd, is inserted between the grid of voltage supply line 17 and driving transistors Tdr.The grid of transistor T 3 is connected with the reseting signal line 142 that extends in directions X.Supply with common reseting signal line RSb from scan line drive circuit 23 to the reseting signal line 142 of each row.In addition, its structure also can be that generation reset signal RSb and the circuit of exporting to each reseting signal line 142 also can be arranged with scan line drive circuit in 23 minutes.
Figure 21 is the sequential chart of action that is used for illustrating the electronic installation D of present embodiment.As shown in the figure, each frame comprised initialization period P rs2 before writing period P wrt.The voltage A of each voltage supply line 17, same with second embodiment, be set to magnitude of voltage Vss writing period P wrt, and at initialization period P rs2 and drive period P drv and be set to magnitude of voltage Vdd.On the other hand, reset signal RSb, rs2 is transferred to low level in the initialization period P, and keeps high level during beyond this.In addition, sweep signal S[1]～S[m] waveform, same with first embodiment.
Figure 22 is the circuit diagram of the apperance of the unit circuit U of expression initialization period P rs2.As shown in the figure, at initialization period P rs2, because reset signal RSb is transferred to low level, so transistor T 3 is transferred to conducting state, and the grid of driving transistors Tdr is electrically connected with voltage supply line 17.Therefore, the grid voltage Vg of driving transistors Tdr is set to the magnitude of voltage Vdd that supplies with to voltage supply line 17 constantly at this.The action and the 3rd embodiment that write period P wrt and driving period P drv are same.
According to more than, in the present embodiment, because grid voltage Vg is initialized to magnitude of voltage Vdd before writing period P wrt, therefore regardless of the quantity of electric charge that is stored at before frame among the capacity cell C, in respectively writing period P wrt, data voltage Vdata corresponding charge correctly can both be stored among the capacity cell C.Therefore,, compare, can each electrooptic element 11 be controlled at desirable gray scale with high precision with first embodiment according to present embodiment.
(E: variation)
In above each technical scheme, can add various distortion.If the deformation technology scheme that illustration is concrete is then as follows.In addition, also can suitably make up following each technical scheme.
(1) variation 1
With the signal D[1 that drives among the period P drv]～D[n] suitably change of waveform (waveform of control voltage Vctl).For example, though in each embodiment illustration be that benchmark and waveform are line symmetrical triangular ripple with the mid point tc that drives period P drv, for example also can adopt oblique wave or sawtooth wave or many oblique waves various waveforms such as (staircase waveforms) as control voltage Vctl.In addition, not only the waveform of magnitude of voltage straight line change can also adopt the waveform that is curvilinear motions such as sine wave as control voltage Vctl.
In addition, though in each embodiment illustration become the structure of waveform of the one-period of triangular wave at the control voltage Vctl that drives period P drv, also various units waveforms such as triangular wave or oblique wave illustrated above or sawtooth wave a plurality of continuous waveform (promptly repeating repeatedly the waveform of the rising and the decline of voltage) in driving period P drv can be applied to control among the voltage Vctl.In electronic installation D of the present invention, can adopt in driving period P drv along with effluxion in, voltage produces the various waveforms of change as control voltage Vctl.
(2) variation 2
In the 4th embodiment and the 5th embodiment, though illustration in initialization period P rs1 the voltage Vn of tie point N be set to the structure of magnitude of voltage Vdd, the magnitude of voltage that is set to voltage Vn at this initialization period P rs1 can suitably change.Just, if according to the angle that period P wrt has electric current I 0 to flow through definitely that writes that becomes magnitude of voltage Vss at the voltage A that makes voltage supply line 17, the voltage Vn of preferred initialization period P rs1 is set to than the magnitude of voltage of noble potential more of the additive value (Vss+Vth_TR) between the threshold voltage vt h_TR of magnitude of voltage Vss and driving transistors Tdr.
And, in the 6th embodiment, though illustration in initialization period P rs2 grid voltage Vg be set to the structure of magnitude of voltage Vdd, the magnitude of voltage that is set to grid voltage Vg at this initialization period P rs2 is arbitrarily.For example, also can be with at the voltage A of the voltage supply line 17 of initialization period P rs2 as magnitude of voltage Vss, will be set at the structure of magnitude of voltage Vss at the grid voltage Vg of initialization period P rs2.
(3) variation 3
The structure of constituent parts circuit U can suitably change.More particularly, the transistorized conductivity type that constitutes the unit circuit U of each embodiment is arbitrarily.For example, can be with the transistor T 1 of the 3rd embodiment as the p channel-type, also can be with the transistor T 3 of the transistor T 2 of the 4th embodiment and the 5th embodiment or the 6th embodiment as the n channel-type.
And, though in each embodiment illustration driving transistors Tdr be the structure of n channel-type, driving transistors Tdr also can be the structure of p channel-type.In the structure of the driving transistors Tdr that adopts the p channel-type, do not change even if write the voltage A of voltage supply line 17 among period P wrt and the driving period P drv, also can realize effect and the effect same with each embodiment.In this structure, writing period P wrt (voltage A is and drives the identical magnitude of voltage Vdd of period P drv), if transistor T 1 is transferred to conducting state, the drain voltage of driving transistors Tdr (being the anode of electrooptic element 11) then is set to the numerical value (Vdd-Vth_TR) that deducts behind the threshold voltage vt h_TR from magnitude of voltage Vdd.
(4) variation 4
In above technical scheme, though illustration the OLED element as electrooptic element 11, the electrooptic element that is adopted in the electronic installation of the present invention is not to be defined in this.For example, replace the OLED element, the various self-emission devices of also can utilize inorganic EL element, cause/launch (FE) element, surface conduction type radiated element, ballistic electron emissive element (BS:Ballistic electron Surface emitting) element, LED (Light Emitting Diode) are such, electrophoresis element or various electrooptic elements such as electroluminescent cell, liquid crystal cell in addition.In addition, the present invention can also be applied in the sensor devices such as biochip.Driven element of the present invention, be comprise by give electric flux the notion of driven all key elements, electrooptic elements such as light-emitting component are an example of driven element only.
(F: application examples)
Then, describe at the e-machine that has utilized the electronic installation among the present invention.
Figure 23 adopts the stereographic map of the electronic installation D of certain technical scheme discussed above as the structure of the portable personal computer of display device for expression.Personal computer 2000 possesses electronic installation D and main part 2010 as display device.In main part 2010, power switch 2001 and keyboard 2002 are set.Therefore this electronic installation D owing to utilize the OLED element in electrooptic element 11, can show that angle of visibility extensively and the picture of seeing easily.
Figure 24 represents the structure of the mobile phone of electronic installation D relevant in the application implementation mode.Mobile phone 3000 possesses a plurality of operating keys 3001 and scroll key 3002, also has the electronic installation D as display device.By operation scroll key 3002, thereby make the picture rolling that is presented among the electronic installation D.
Figure 25 represents the structure of the personal digital assistant device (PDA:Personal Digital Assistants) of electronic installation D relevant in the application implementation mode.Information portable terminal 4000 possesses: a plurality of operating keys 4001 and power switch 4002, also have the electronic installation D as display device.In case operating power switch 4002, then the so various information of address book or schedule just are displayed among the electronic installation D.
In addition, as the e-machine of using the electronic installation (electro-optical device) that the present invention is correlated with, except that Figure 23～shown in Figure 25, also can enumerate Digital Still Camera, televisor, video camera, automobile navigation apparatus, pager, electronic memo, Electronic Paper, counter, word processor, worktable, videophone, POS terminal, printer, scanner, duplicating machine, video recorder, possess the machine of touch-screen etc.And the purposes of the electronic installation among the present invention is not the demonstration that is defined in image.For example, in the such image processing system of the printer of optical-write-in mode or electronic copier, though use the write head that photoreceptor is exposed according to the image that should form in recording materials such as paper, even if as this write head, electronic installation of the present invention also can be utilized.The said unit circuit of so-called the present invention is except that the circuit (so-called image element circuit) of the pixel that constitutes display device, also comprises the notion of the circuit of the unit that becomes exposure in the image processing system.

Claims (31)

1, a kind of electronic installation,
Possess: many first wirings; With described many first many second wirings that wiring intersects; With a plurality of unit circuits that intersect corresponding configuration between described many first wirings and described many second wirings; With the many foundation calibration signal line that is used for supplying with reference signal to described a plurality of unit circuits,
Each of described a plurality of unit circuits comprises:
Driven element, its supply by driving voltage or drive current is driven;
Driving mechanism, it is supplied with described driving voltage or described drive current to described driven element;
On-off element, it is controlled being electrically connected between one second wiring in the input end that comprises in the described driving mechanism and described many second wirings; With
Capacity cell, it comprises first electrode that is connected with described input end and second electrode that is connected with a foundation calibration signal line in described many foundation calibration signal line, store charge between described first electrode and described second electrode.
2, electronic installation according to claim 1 is characterized in that,
Described many foundation calibration signal line intersects with described many second wirings.
3, electronic installation according to claim 1 is characterized in that,
Each current potential of described many foundation calibration signal line, the cycle in accordance with regulations changes.
4, electronic installation according to claim 3 is characterized in that, possesses:
Select circuit, it is selected respectively described many first wirings; With
Signal generating circuit, it supplies with described reference signal to described many foundation calibration signal line successively with the order of selecting described first wiring.
5, electronic installation according to claim 1 is characterized in that,
In between the first phase, by supplying with data-signal with described on-off element to described input end, thereby set the current potential of described input end via described one second wiring.
6. electronic installation according to claim 5 is characterized in that,
With described driving voltage or the described drive current length during the driving that described driven element is supplied with, with between the described first phase in the current potential of the described input end that is set corresponding.
7. according to claim 5 or 6 described electronic installations, it is characterized in that,
The current potential of described input end, the variation of the current potential of the described foundation calibration signal line of foundation begins to produce change from the current potential that sets according to described data-signal between the described first phase.
8. electronic installation according to claim 7 is characterized in that,
Described input end becomes suspended state at described driving voltage or described drive current quilt at least a portion during the driving that described driven element is supplied with.
9. electronic installation according to claim 5 is characterized in that,
Described driving mechanism, the current potential of the described input end that sets according to described data-signal between the described first phase surpasses during the current potential of regulation and the current potential of described input end be lower than regulation current potential during the either party in, described driving voltage or described drive current are supplied with to described driven element.
10. electronic installation according to claim 9 is characterized in that,
The current potential of a described foundation calibration signal line, set the current potential of described input end according to described data-signal between the described first phase when, be set to first current potential at least,
The current potential of a described foundation calibration signal line was described first current potential when second phase began,
A described foundation calibration signal line in the described second phase, becomes second current potential with voltage level different with described first current potential,
The current potential of the described foundation calibration signal line when the described second phase finishes is described first current potential.
11. electronic installation according to claim 10 is characterized in that,
The variation of the current potential of the described foundation calibration signal line in the described second phase is that the moment that becomes described second current potential with a described foundation calibration signal line is the line symmetry at center.
12. electronic installation according to claim 1 is characterized in that,
Each of described a plurality of unit circuits comprises resetting-mechanism, its via described one second wiring and described on-off element before between the first phase of described input end supply data-signal, described input end is set at the current potential of regulation.
13. an electro-optical device,
Possess: many sweep traces; Many data lines of intersecting with described many sweep traces; With a plurality of unit circuits that intersect corresponding configuration between described many sweep traces and the described many data lines; With the many foundation calibration signal line that is used for supplying with reference signal to described a plurality of unit circuits,
Each of described a plurality of unit circuits comprises:
Electrooptic element, its supply by driving voltage or drive current is driven;
Driving mechanism, it is supplied with described driving voltage or described drive current to described electrooptic element;
On-off element, it is controlled being electrically connected between the data lines in the input end that comprises in the described driving mechanism and the described many data lines; With
Capacity cell, it has first electrode that is connected with described input end and second electrode that is connected with a foundation calibration signal line in described many foundation calibration signal line, store charge between described first electrode and described second electrode,
The length during the driving that described electrooptic element is supplied with described driving voltage or described drive current, and pass through via a described data lines and described on-off element the current potential correspondence of the described input end that is set to described input end supply data-signal between the first phase.
14. an e-machine possesses each described electronic installation or the described electro-optical device of claim 13 in the claim 1～12.
15. an electronic circuit is used to drive driven element, comprises signal wire, the unit circuit and the voltage supply line that are connected with described signal wire,
Described unit circuit comprises:
Driving transistors, it possesses control terminal, the first terminal and second terminal that is connected with described voltage supply line, and the voltage of the described control terminal of foundation is set the conducting state between described the first terminal and described second terminal;
First on-off element, it is controlled being electrically connected between the either party in the described control terminal of described driving transistors and described the first terminal and described second terminal; With
Capacity cell, it possesses dielectric between first electrode and second electrode, and described first electrode is connected with the described control terminal of described driving transistors, and described second electrode is connected with described signal wire,
To the drive current of described driven element supply and the size of at least one side in the driving voltage, be set according to the conducting state between described the first terminal and described second terminal.
16. an electronic installation comprises signal wire, the unit circuit and the voltage supply line that are connected with described signal wire,
Described unit circuit comprises:
Driving transistors, it possesses control terminal, the first terminal and second terminal that is connected with described voltage supply line, and the voltage of the described control terminal of foundation is set the conducting state between described the first terminal and described second terminal;
Driven element;
First on-off element, it is controlled being electrically connected between the either party in the described control terminal of described driving transistors and described the first terminal and described second terminal; With
Capacity cell, it possesses dielectric between first electrode and second electrode, and described first electrode is connected with the described control terminal of described driving transistors, and described second electrode is connected with described signal wire,
To the drive current of described driven element supply and the size of at least one side in the driving voltage, be set according to the conducting state between described the first terminal and described second terminal.
17. electronic installation according to claim 16 is characterized in that,
Described second electrode directly is connected with described signal wire.
18. according to claim 16 or 17 described electronic installations, it is characterized in that,
Between the first phase, the either party in the described control terminal of described driving transistors and described the first terminal and described second terminal is electrically connected via described first on-off element,
Between the described first phase, supply with data-signal via described signal wire to described second electrode,
In the second phase, supply with the control signal of in this second phase, passing in time and changing to described second electrode.
19. electronic installation according to claim 18 is characterized in that,
Described first electrode becomes suspended state at least a portion of the described second phase.
20. according to claim 18 or 19 described electronic installations, it is characterized in that,
Comprise voltage control circuit, its voltage with described voltage supply line is set at any in a plurality of magnitudes of voltage.
21. electronic installation according to claim 20 is characterized in that,
Described voltage control circuit, in at least a portion between the described first phase, the voltage of described voltage supply line is set at first magnitude of voltage lower than described the first terminal, in at least a portion of the described second phase, the voltage of described voltage supply line is set at second magnitude of voltage higher than described the first terminal.
22. each the described electronic installation according in the claim 16～21 is characterized in that,
Described first on-off element is a switching transistor,
The transistor that comprises in the described unit circuit has only described driving transistors and described switching transistor.
23. electronic installation according to claim 21 is characterized in that,
Described driven element is driven when the magnitude of voltage of described the first terminal surpasses the magnitude of voltage of stipulating,
Described first magnitude of voltage, the mode lower than the magnitude of voltage of described regulation according to the magnitude of voltage of the described the first terminal during the said write determined.
24. electronic installation according to claim 21 is characterized in that,
Described unit circuit comprises first resetting-mechanism that the voltage of described the first terminal is set at the magnitude of voltage of regulation.
25. electronic installation according to claim 24 is characterized in that,
Described first resetting-mechanism comprises the second switch element, and it is electrically connected described the first terminal during initialization with described voltage supply line,
Described voltage control circuit during described initialization, is set at described second magnitude of voltage with the voltage of described voltage supply line.
26. electronic installation according to claim 24 is characterized in that,
Described first resetting-mechanism comprises the second switch element, and it is electrically connected described the first terminal during initialization with the supply lines of supplying with constant voltage,
Described voltage control circuit during described initialization, is set at described first magnitude of voltage with the voltage of described voltage supply line.
27. electronic installation according to claim 21 is characterized in that,
Described unit circuit comprises second resetting-mechanism, and its voltage with the described control terminal of described driving transistors is set at the magnitude of voltage of regulation.
28. electronic installation according to claim 27 is characterized in that,
Described second resetting-mechanism comprises the 3rd on-off element, and it is electrically connected described control terminal during initialization with described voltage supply line,
Described voltage control circuit during described initialization, is set at described second magnitude of voltage with the voltage of described voltage supply line.
29. an e-machine possesses each the described electronic installation in the claim 16～28.
30. an electro-optical device comprises signal wire, the unit circuit and the voltage supply line that are connected with described signal wire,
Described unit circuit comprises:
Driving transistors, it possesses control terminal, the first terminal and second terminal that is connected with described voltage supply line, and the voltage of the described control terminal of foundation, sets the conducting state between described the first terminal and described second terminal;
Electrooptic element;
First on-off element, it is controlled being electrically connected between the either party in the described control terminal of described driving transistors and described the first terminal and described second terminal; With
Capacity cell, it possesses dielectric between first electrode and second electrode, and described first electrode is connected with the described control terminal of described driving transistors, and described second electrode is connected with described signal wire,
At least one side's size is set according to the conducting state between described the first terminal and described second terminal in drive current that described electrooptic element is supplied with and driving voltage.
31. the driving method of an electronic installation, be used to drive electronic installation with unit circuit, this unit circuit comprises driving transistors and driven element, described driving transistors possesses control terminal, the first terminal and second terminal that is connected with described voltage supply line, and voltage according to described control terminal, set the conducting state between described the first terminal and described second terminal
Between the first phase, the either party in described the first terminal and described second terminal is electrically connected with the described control terminal of described driving transistors, between this first phase in, supply with data-signal via described signal wire to described second electrode,
In the second phase, supply with the control signal of in this second phase, passing in time and changing to described second electrode.
CN 200610107777 2005-07-21 2006-07-21 Electronic circuit, electronic device, method of driving electronic device, electro-optical device, and electronic apparatus Pending CN1901008A (en)

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