CN1587996A - Photoconductive type ultraviolet detector - Google Patents
Photoconductive type ultraviolet detector Download PDFInfo
- Publication number
- CN1587996A CN1587996A CN 200410053865 CN200410053865A CN1587996A CN 1587996 A CN1587996 A CN 1587996A CN 200410053865 CN200410053865 CN 200410053865 CN 200410053865 A CN200410053865 A CN 200410053865A CN 1587996 A CN1587996 A CN 1587996A
- Authority
- CN
- China
- Prior art keywords
- gallium oxide
- ultraviolet
- light
- indium gallium
- ultraviolet detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 28
- 229910052738 indium Inorganic materials 0.000 claims abstract description 27
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 27
- 230000035945 sensitivity Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000000523 sample Substances 0.000 abstract 2
- 238000001914 filtration Methods 0.000 abstract 1
- 238000005507 spraying Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention of light guide ultraviolet sensor consists of pure gallium oxide light filter, indium gallium oxide ultraviolet sensitive film, crossing electrode and insulating substrate from up to down. The ultraviolet sensor uses pure gallium oxide light filter as filtration layer, indium gallium oxide as ultraviolet sensitive layer, which can filter light whose wavelength is smaller than 240mm and make the probe only be sensitive to the light within sun blind area wavelength range. Besides, because of crossing electrode under sensitive film whose surface square receiving light is large, influence of crossing electrode in common light guide probe on surface square receiving light is avoided, resulting high sensitivity. The invention has the advantages of simple structure, high sensitivity and low cost.
Description
Technical field
The present invention relates to a kind of photoconduction type ultraviolet detector.
Background technology
Because atmospheric influence, the light wave of solar radiation medium wavelength between 240nm-280nm is absorbed, and can't arrive earth surface, and therefore, this wave band is called a day blind area.The ultraviolet detector that works in day blind area can not received the serious interference of solar radiation as infrared eye, can be below strong sunshine operate as normal.Solar blind ultraviolet detection technology has great military and civilian's application prospect, can be widely used in the aspect such as wake flame detection, guided missile detection and guidance, ultraviolet secure communication technology, fire alarm of aircraft, rocket etc.Compare with infrared detection technique, solar blind ultraviolet detection technology has certain advantage, combines military, civilian fields such as can being used for double-colored guidance, fire alarm with infrared acquisition.Therefore it is very necessary developing the material that is used for this Detection Techniques.The material that is used for solar-blind UV detector at present mainly contains Si, SiC and GaAlN etc.But Si and SiC are not day blind section bar material truly because sunshine is had response, need install expensive filter plate additional.GaAlN then is one of optimal selection of present solar-blind UV detector material, but exists preparation complicated, shortcomings such as cost of manufacture height.
Summary of the invention
The purpose of this invention is to provide a kind of to the insensitive guide type ultraviolet detector of sunshine in day blind area work.
Guide type ultraviolet detector of the present invention is characterized in that from top to bottom successively by pure zirconia gallium filter coating, indium gallium oxide ultraviolet sensitivity film, and interdigital electrode and dielectric substrate are repeatedly put and are formed.
The energy gap of gallium oxide is 5.16eV, and corresponding wavelength is 240nm, is positioned at the shortwave end of solar blind, therefore as filter coating, can avoid the influence of sunshine medium wavelength less than the light wave of 240nm.
Above-mentioned indium gallium oxide ultraviolet sensitivity film is that expression formula is In
xGa
2-xO
3Indium gallium oxide film, 0≤x in the formula≤0.52.The present invention forms the response wave length that the indium gallium oxide is regulated the ultraviolet sensitivity film by mix an amount of indium in gallium oxide after.The energy gap of indium oxide has only 3.75eV, mixes a certain amount of indium and form indium gallium oxide In in gallium oxide
xGa
2-xO
3, the energy gap of film will reduce so.In theory, when x=0.52, about the 4.4eV that the energy gap of film can reduce, just in time be positioned near the upper limit (280nm, or 4.4eV) of earth surface solar blind wavelength.Therefore, as long as regulate the content (0≤x≤0.52) of the indium that mixes, just can in the 240nm-280nm scope, regulate the response wave length of film.
Above-mentioned gallium oxide and indium gallium oxide film are made by spraying cracking process or sol-gel process, and interdigital electrode can be made by noble metals such as gold or platinum, or is made by heavily doped polysilicon.Said dielectric substrate is the silicon chip that quartz glass or superficial growth have silicon oxide film.
Ultraviolet detector of the present invention is a filter layer with pure zirconia gallium film, is the ultraviolet sensitivity layer with the indium gallium oxide, both can the elimination wavelength less than the light of 240nm, make detector only to the light wave sensitivity in the solar blind wavelength coverage again.In addition, because interdigital electrode is below sensitive membrane, the sensitive membrane light-receiving area is big, avoided in the general photoconductive detectors interdigital electrode to the influence of light-receiving area, so sensitivity is very high.Ultraviolet detector of the present invention has simple in structure, and is highly sensitive, low cost and other advantages.
Description of drawings
Fig. 1 is the structural representation of conductivity type ultraviolet detector of the present invention;
Fig. 2 is the transmitted light spectrogram of pure zirconia gallium and indium gallium oxide (x=0.3);
Fig. 3 is the response curve of conductivity type ultraviolet detector of the present invention to sunshine and 254nm wavelength ultraviolet light.
Embodiment
With reference to Fig. 1, ultraviolet detector of the present invention, from top to bottom successively by pure zirconia gallium filter coating 1, indium gallium oxide ultraviolet sensitivity film 2, interdigital electrode 3 and dielectric substrate 4 are repeatedly put and are formed.
Ultraviolet detector prepares example: in this example, gallium oxide and indium gallium oxide film are obtained by the spraying cracking process.To gallium oxide and indium gallium oxide film, spraying plating solution is respectively the mixed liquor of gallium chloride and gallium chloride-inidum chloride and alcohol, and its compound method is as follows: for pure zirconia gallium film, only need to add gallium chloride during the solution preparation in absolute ethyl alcohol.To indium gallium oxide film, in required ratio an amount of gallium chloride and inidum chloride are dissolved in the absolute ethyl alcohol, in this example, the atomic ratio of indium and gallium is that 0.3/1.7 (is x=0.3, or In
0.3Ga
1.7O
3).For fear of the influence of other impurity, agents useful for same is analyzes pure level.The above-mentioned solution for preparing is in proportion used magnetic stirrer 1 hour down at 60 degrees centigrade, form the solution of homogeneous transparent.The substrate adopting quartz glass is made interdigital electrode above in advance.In this example, interdigital electrode is heavily doped polysilicon, is made by the silicon integrated circuit technology of standard, and electrode width and electrode and distance between electrodes are 75 microns.Underlayer temperature remains between 400-700 degree centigrade, and every layer spray time is 5 minutes.During spraying, carrier gas is an air, air pressure 0.4Mpa.Earlier with the indium gallium mixed solution spraying indium gallium oxide rete for preparing, then with the pure Gallium solution spraying pure zirconia gallium rete for preparing.To pure zirconia gallium and indium content is the indium gallium oxide film of x=0.3, and the transmitted light spectrogram that test obtains as shown in Figure 2.The absorption spectra of mixing the indium gallium oxide film behind the indium as seen from the figure obviously moves to long wavelength's direction, and promptly the relative pure zirconia gallium of energy gap film diminishes.
Fig. 3 is the modulation photoconduction resonse characteristic of above-mentioned example ultraviolet detector, and black circle is represented under the sunshine among the figure, and soft dot is represented the 254nm ultraviolet light, during test light intensity is modulated, and frequency is 1Hz.This detector has only very weak photoconductive response to sunshine from scheming as can be seen, and the light of 254nm wavelength is had very big photoconductive response, shows that this ultraviolet detector has the obvious day blind characteristics that get.
Claims (4)
1. a photoconduction type ultraviolet detector is characterized in that this detector from top to bottom successively by pure zirconia gallium filter coating (1), indium gallium oxide ultraviolet sensitivity film (2), and interdigital electrode (3) and dielectric substrate (4) are repeatedly put and are formed.
2. ultraviolet detector according to claim 1 is characterized in that said indium gallium oxide ultraviolet sensitivity film (2) is that expression formula is In
xGa
2-xO
3Indium gallium oxide film, 0≤x in the formula≤0.52.
3. ultraviolet detector according to claim 1 is characterized in that said interdigital electrode (3) is gold or platinum noble metals or heavily doped polysilicon.
4. ultraviolet detector according to claim 1 is characterized in that said dielectric substrate (4) is the silicon chip that quartz glass or superficial growth have silicon oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410053865 CN1260829C (en) | 2004-08-17 | 2004-08-17 | Photoconductive type ultraviolet detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410053865 CN1260829C (en) | 2004-08-17 | 2004-08-17 | Photoconductive type ultraviolet detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1587996A true CN1587996A (en) | 2005-03-02 |
| CN1260829C CN1260829C (en) | 2006-06-21 |
Family
ID=34602994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410053865 Expired - Fee Related CN1260829C (en) | 2004-08-17 | 2004-08-17 | Photoconductive type ultraviolet detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1260829C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393253A (en) * | 2017-07-30 | 2017-11-24 | 王旭兰 | Long distance electric fire hazard monitoring system based on hetero-junction thin-film and preparation method thereof |
| CN108227243A (en) * | 2018-01-19 | 2018-06-29 | 电子科技大学 | Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof |
| CN108807586A (en) * | 2018-04-28 | 2018-11-13 | 南京大学 | A kind of band logical solar blind ultraviolet detector and preparation method thereof polarizing selection characteristic based on gallium oxide |
| CN108878544A (en) * | 2017-05-15 | 2018-11-23 | 上海新微科技服务有限公司 | Si-based photodetectors and preparation method thereof |
| CN109244173A (en) * | 2018-08-09 | 2019-01-18 | 西安电子科技大学 | A kind of self-powered Two stage ultraviolet electric explorer part and preparation method thereof |
| CN111564504A (en) * | 2020-04-16 | 2020-08-21 | 南京大学 | Solar blind ultraviolet detector and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100541808C (en) * | 2008-04-18 | 2009-09-16 | 中国科学院上海技术物理研究所 | The preparation method of HgCdTe long wave photoconductive infrared array detector and multi-layered electrode |
-
2004
- 2004-08-17 CN CN 200410053865 patent/CN1260829C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878544A (en) * | 2017-05-15 | 2018-11-23 | 上海新微科技服务有限公司 | Si-based photodetectors and preparation method thereof |
| CN108878544B (en) * | 2017-05-15 | 2021-01-22 | 上海新微科技服务有限公司 | Silicon-based photoelectric detector and manufacturing method thereof |
| CN107393253A (en) * | 2017-07-30 | 2017-11-24 | 王旭兰 | Long distance electric fire hazard monitoring system based on hetero-junction thin-film and preparation method thereof |
| CN107393253B (en) * | 2017-07-30 | 2020-01-03 | 王旭兰 | Remote electrical fire monitoring system based on heterojunction film and preparation method thereof |
| CN108227243A (en) * | 2018-01-19 | 2018-06-29 | 电子科技大学 | Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof |
| CN108227243B (en) * | 2018-01-19 | 2019-12-27 | 电子科技大学 | Silicon-based all-dielectric electronic control terahertz wave regulation and control device and preparation method thereof |
| CN108807586A (en) * | 2018-04-28 | 2018-11-13 | 南京大学 | A kind of band logical solar blind ultraviolet detector and preparation method thereof polarizing selection characteristic based on gallium oxide |
| CN109244173A (en) * | 2018-08-09 | 2019-01-18 | 西安电子科技大学 | A kind of self-powered Two stage ultraviolet electric explorer part and preparation method thereof |
| CN109244173B (en) * | 2018-08-09 | 2020-06-05 | 西安电子科技大学 | Self-powered dual-waveband ultraviolet photoelectric detector and preparation method thereof |
| CN111564504A (en) * | 2020-04-16 | 2020-08-21 | 南京大学 | Solar blind ultraviolet detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1260829C (en) | 2006-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lin et al. | Contributions of pollutants from North China Plain to surface ozone at the Shangdianzi GAW Station | |
| Wong et al. | Daytime HONO vertical gradients during SHARP 2009 in Houston, TX | |
| CN1260829C (en) | Photoconductive type ultraviolet detector | |
| CN111584674B (en) | Single-chip integrated solar blind ultraviolet and near-infrared double-color photoelectric detector and manufacturing method thereof | |
| Takeda et al. | Determination of nitrate in natural waters with the photo-induced conversion of nitrate to nitrite | |
| CN105911031B (en) | The Visual retrieval test paper of susceptible-dose of the one kind for detecting arsenic in water body (III) | |
| WO2010025291A3 (en) | Four terminal multi-junction thin film photovoltaic device and method | |
| CN102522438A (en) | Near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles | |
| CN102176470A (en) | Back-illuminated Si-PIN photoelectric detector taking black silicon material as photosensitive layer and manufacturing method thereof | |
| Zhang et al. | Self-powered solar-blind photodetectors based on α-Ga2O3 nanorod arrays | |
| Ren et al. | Vertical characteristics of NO2 and HCHO, and the ozone formation regimes in Hefei, China | |
| CN102315330B (en) | Production method for high-sensitiveness ultraviolet detector | |
| Sjoedin | Studies of the diurnal variation of nitrous acid in urban air | |
| Zargar et al. | Crystallographic, spectroscopic and electrical study of ZnO: CdO nanocomposite-coated films for photovoltaic applications | |
| CN105280748A (en) | Two-color detector | |
| CN110416333B (en) | Ultraviolet photoelectric detector and preparation method thereof | |
| Fei et al. | Improved responsivity of MgZnO film ultraviolet photodetectors modified with vertical arrays ZnO nanowires by light trapping effect | |
| CN108998019A (en) | A kind of broadband emission near-infrared fluorescent powder and preparation method thereof | |
| CN113130769A (en) | Two-dimensional layered perovskite single crystal, wide-spectrum photoelectric detector and preparation method thereof | |
| Wentzell et al. | Measurements of HONO during BAQS-Met | |
| CN110416332A (en) | Si-APD photodetector and preparation method thereof based on black silicon and quantum dot | |
| CN106684203B (en) | A kind of gallium nitrogen avalanche photodide component and preparation method thereof | |
| CN109148159A (en) | Based on α/β-Ga2O3The mutually self-powered solar blind ultraviolet detector of knot | |
| Hassan et al. | Synthesis of ZnO-CdO nanocomposite by sol-gel for NO2 gas sensing | |
| CN108321243A (en) | Black silicon nano PIN photoelectric detector structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060621 |