CN1563885A - Measuring method and measurer for thickness of metallic thin strip - Google Patents
Measuring method and measurer for thickness of metallic thin strip Download PDFInfo
- Publication number
- CN1563885A CN1563885A CN 200410017678 CN200410017678A CN1563885A CN 1563885 A CN1563885 A CN 1563885A CN 200410017678 CN200410017678 CN 200410017678 CN 200410017678 A CN200410017678 A CN 200410017678A CN 1563885 A CN1563885 A CN 1563885A
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- Prior art keywords
- michelson interferometer
- photosystem
- metal sheet
- sheet band
- light source
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims description 12
- 239000013307 optical fiber Substances 0.000 claims description 8
- 238000005305 interferometry Methods 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 3
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
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- Length Measuring Devices By Optical Means (AREA)
Abstract
Metal sheet band to be measured is positioned between two Michelson interferometers. Two corresponding surfaces of metal sheet band to be measured are as a reflecting surface for each interferometer. The two Michelson interferometers are cascaded to form a differentiate interference system. A light source in low degree of coherence through first light transmission system irradiates onto first Michelson interferometers, from which output light through second light transmission system as a light source irradiates onto second interferometers. Opto-electronic receiver receives output light from the second interferometers through third transmission system. After signal processor carries out process, thickness of metal sheet band is obtained. Advantages are: high measuring sensitivity, and antivibration. The invention is suitable to opaque object with high reflectivity in both surfaces, and very thin sheet band with no substrate supported or with transparent substrate supported.
Description
Affiliated technical field
The present invention relates to adopt optical means is the metering outfit of feature, relates in particular to a kind of measuring method and measurement mechanism of metal sheet band thickness.
Background technology
The accurate strip general thickness of metal mainly between 100um-10um, belongs to high value added product at present below 100um.In the production run of sheet metal strip, the control of thickness is most important, and gordian technique is absolutely necessary.At present, the major technique of thickness measuring aspect has both at home and abroad: 1. rays method is measured thickness.According to the strip of metal different-thickness of the same race and the different thickness of measuring strip of effect degree of ray.Because the effect degree of different metal and ray (absorption, chromatic dispersion) has nothing in common with each other, all to demarcate (multiple demarcation) to every kind of metal when therefore measuring with standard film separately, more complicated in the practical application, and hazard level is higher in the ray applications process has limited being extensive use of of it.2. use eddy current effect and measure thickness.This is a kind of more widely used technology, safety, convenient, but because eddy current effect is relevant with metal species, and this method lost efficacy to a part of metal, to those effective metals, measurand thickness can not be too thin, also has multiple demarcation problem in addition.
Summary of the invention
The purpose of this invention is to provide a kind of measuring method and measurement mechanism of metal sheet band thickness, be composed in series the differential interferometry system, can measure the thickness of the metal sheet band that is as thin as micron order, no base plate supports or transparency carrier support with Michelson interferometer.
In order to achieve the above object, the technical solution used in the present invention is as follows:
Measuring method: tested metal sheet band is placed between two Michelson interferometers, and two corresponding surfaces of tested metal sheet band are respectively as a reflecting surface in each interferometer; These two Michelson interferometers are composed in series the differential interferometry system; A low degree of coherence light source passes photosystem through first and exposes to first Michelson interferometer, the output light of first Michelson interferometer passes photosystem as light source irradiation to the second Michelson interferometer through second, the output light of second Michelson interferometer passes photosystem through the 3rd and is received by photelectric receiver, gets the thickness of tested strip through signal processor processes.
Measurement mechanism: comprise that low degree of coherence light source, first Michelson interferometer, second Michelson interferometer, first, second, third pass photosystem, photelectric receiver, signal processor; First Michelson interferometer, second Michelson interferometer are placed on the both sides of tested metal sheet band, low degree of coherence light source passes photosystem through first and exposes to optical splitter in first Michelson interferometer, interference light is through second optical splitter that passes in photosystem to the second Michelson interferometer, and interference light is connected to signal processor through the 3rd biography photosystem, photelectric receiver.
Said optical splitter is beam splitter or fiber coupler; Low degree of coherence light source is a wideband light source, and first, second, third passes photosystem is respectively biography light optical fiber, and photelectric receiver is the unit photelectric receiver, the array photelectric receiver, and ccd array spectrometer, signal processor are the data processing PC.
The present invention compares with background technology, the useful effect that has is: utilize two Michelson interferometer series connection to constitute differential interferometer, the measurement reflecting surface of two interferometers is born by two corresponding surfaces of strip, the final output signal of this interference system is only relevant with the thickness of strip, and measuring the location independent of light path with strip, high precision, the high sensitivity of the existing interferometry of this sampling instrument have stronger antijamming capability again.In view of above-mentioned, the metal that the present invention proposes tape thickness measuring system as thin as a wafer has characteristics such as untouchable, non-destructive, high precision, fast detecting, compact conformation, safety, antijamming capability are strong.Be fit to that those are opaque, all there is the thickness measure of the ultra-thin strip of higher optical reflectivity, no substrate support or transparent substrates support on the two sides.
Description of drawings
Fig. 1 is the theory diagram of measurement mechanism of the present invention;
Fig. 2 is the embodiment block diagram of measurement mechanism of the present invention.
Embodiment
As shown in Figure 1, comprise that low degree of coherence light source, first Michelson interferometer, second Michelson interferometer, first, second, third pass photosystem, photelectric receiver, signal processor; First Michelson interferometer, second Michelson interferometer are placed on the both sides of tested metal sheet band, low degree of coherence light source passes photosystem through first and exposes to optical splitter in first Michelson interferometer, interference light is through second optical splitter that passes in photosystem to the second Michelson interferometer, and interference light is connected to signal processor through the 3rd biography photosystem, photelectric receiver.
As shown in Figure 2, be one embodiment of the present of invention, this device comprises wideband light source 1, lens L
1, pass light optical fiber 5, comprise by beam splitter BS
1, reference mirror M and tested strip 4 first Michelson interferometer 2, the lens L of a surface composition
2, pass light optical fiber 6, lens L
3, comprise by beam splitter BS
2, reference mirror M
2Second Michelson interferometer 3, lens L with another corresponding surface composition of tested strip 4
4, pass light optical fiber 7, ccd array spectrometer 8 and data processing PC 9.Wideband light source 1 scioptics L
1Collimation shines first Michelson interferometers 2 after pass light optical fiber 5, and the measurement catoptron of this interferometer is a surface of tested strip 4, the reference mirror M of interferometer
1Adjust to tested strip and become parallel flat, and optical path difference (being designated as x) is adjustable.The output light of this interferometer is through lens L
2Converge to and pass light optical fiber 6, pass through lens L again
3Shine second Michelson interferometer 3, the measurement catoptron of this interferometer is another corresponding surface of tested strip 4, its reference mirror M
2Also adjust to tested strip and become parallel flat, and optical path difference (being designated as y) is adjustable.The position that two interferometers shine the light on two corresponding surfaces of strip should be in two surperficial corresponding point of strip measured point vertical thickness.Adjust x and y make when strip thickness when being zero x equate that with y x when putting into strip, y are much larger than the coherent length of light source.Michelson interferometer 3 output light are through lens L
4Converge to and send into ccd array spectrometer 8 after passing light optical fiber 7, at this moment the interference spectrum signal that receives of spectrometer 8 is just only relevant with strip thickness, and data processing PC 9 is handled the interference spectrum signals and also calculated strip thickness.
When the relative position of the reference mirror of each interferometer and two interferometers fixedly the time, the measurement range of instrument at 1um between the 40um.Change two optical path difference x, any one is equivalent among the y increases or reduces corresponding thickness to strip, therefore can change measurement range.
Claims (3)
1. the measuring method of a metal sheet band thickness is characterized in that: tested metal sheet band is placed between two Michelson interferometers, and two corresponding surfaces of tested metal sheet band are respectively as a reflecting surface in each interferometer; These two Michelson interferometers are composed in series the differential interferometry system; A low degree of coherence light source passes photosystem through first and exposes to first Michelson interferometer, the output light of first Michelson interferometer passes photosystem as light source irradiation to the second Michelson interferometer through second, the output light of second Michelson interferometer passes photosystem through the 3rd and is received by photelectric receiver, gets the thickness of tested strip through signal processor processes.
2. the device that is used for the described a kind of metal sheet band method for measuring thickness of claim 1, it is characterized in that comprising that low degree of coherence light source, first Michelson interferometer, second Michelson interferometer, first, second, third pass photosystem, photelectric receiver, signal processor; First Michelson interferometer, second Michelson interferometer symmetry are placed on the both sides of tested metal sheet band, low degree of coherence light source passes photosystem through first and exposes to optical splitter in first Michelson interferometer, interference light is through second optical splitter that passes in photosystem to the second Michelson interferometer, and interference light is connected to signal processor through the 3rd biography photosystem, photelectric receiver.
3. the device of a kind of metal sheet band method for measuring thickness according to claim 2 is characterized in that: said optical splitter is beam splitter or fiber coupler; Low degree of coherence light source is wideband light source (1), first, second, third passes photosystem is respectively biography light optical fiber (5,6,7), and photelectric receiver is the unit photelectric receiver, the array photelectric receiver, ccd array spectrometer (8), signal processor are data processing PC (9).
Priority Applications (1)
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CN 200410017678 CN1252445C (en) | 2004-04-12 | 2004-04-12 | Measuring method and measurer for thickness of metallic thin strip |
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CN 200410017678 CN1252445C (en) | 2004-04-12 | 2004-04-12 | Measuring method and measurer for thickness of metallic thin strip |
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CN1563885A true CN1563885A (en) | 2005-01-12 |
CN1252445C CN1252445C (en) | 2006-04-19 |
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CN 200410017678 Expired - Fee Related CN1252445C (en) | 2004-04-12 | 2004-04-12 | Measuring method and measurer for thickness of metallic thin strip |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104792272A (en) * | 2014-01-20 | 2015-07-22 | 王伟中 | Optical interference device for online real-time thickness detection |
CN106152951A (en) * | 2016-07-05 | 2016-11-23 | 中国工程物理研究院激光聚变研究中心 | A kind of two-sided interference device measuring non-transparent film thickness distribution and method |
CN107677210A (en) * | 2016-08-01 | 2018-02-09 | 株式会社迪思科 | Measurement apparatus |
CN108344368A (en) * | 2018-05-22 | 2018-07-31 | 中国工程物理研究院机械制造工艺研究所 | A kind of interferometric measuring means and measurement method of slab-thickness uniformity |
CN108955549A (en) * | 2018-09-11 | 2018-12-07 | 深圳立仪科技有限公司 | A kind of two-sided measuring thickness device of translucent material |
CN113340212A (en) * | 2021-05-14 | 2021-09-03 | 中国科学院上海光学精密机械研究所 | Appearance and thickness detection device based on two side interferometers |
-
2004
- 2004-04-12 CN CN 200410017678 patent/CN1252445C/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104792272A (en) * | 2014-01-20 | 2015-07-22 | 王伟中 | Optical interference device for online real-time thickness detection |
CN104792272B (en) * | 2014-01-20 | 2018-01-30 | 王伟中 | Optical interference device for online real-time thickness detection |
CN106152951A (en) * | 2016-07-05 | 2016-11-23 | 中国工程物理研究院激光聚变研究中心 | A kind of two-sided interference device measuring non-transparent film thickness distribution and method |
CN107677210A (en) * | 2016-08-01 | 2018-02-09 | 株式会社迪思科 | Measurement apparatus |
CN108344368A (en) * | 2018-05-22 | 2018-07-31 | 中国工程物理研究院机械制造工艺研究所 | A kind of interferometric measuring means and measurement method of slab-thickness uniformity |
CN108955549A (en) * | 2018-09-11 | 2018-12-07 | 深圳立仪科技有限公司 | A kind of two-sided measuring thickness device of translucent material |
CN113340212A (en) * | 2021-05-14 | 2021-09-03 | 中国科学院上海光学精密机械研究所 | Appearance and thickness detection device based on two side interferometers |
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CN1252445C (en) | 2006-04-19 |
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