CN1550897A - Photoresist composition for multi-micro nozzle head coater - Google Patents
Photoresist composition for multi-micro nozzle head coater Download PDFInfo
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- CN1550897A CN1550897A CNA2004100283331A CN200410028333A CN1550897A CN 1550897 A CN1550897 A CN 1550897A CN A2004100283331 A CNA2004100283331 A CN A2004100283331A CN 200410028333 A CN200410028333 A CN 200410028333A CN 1550897 A CN1550897 A CN 1550897A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
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- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention relates to a photoresist composition for an MMN (multi-micro nozzle) head coater, more particularly to a photoresist composition comprising a novolak resin with a molecular weight ranging from 2000 to 12,000, a diazide photoactive compound, an organic solvent, and a Si-based surfactant for use in liquid crystal display circuits. The photoresist composition for liquid crystal display circuits of the present invention solves the stain problem, which occurs in MMN head coaters used for large-scale substrate glass, and improves coating characteristics, so that it can be utilized industrially and is expected to significantly improve productivity.
Description
Technical field
The present invention relates to the photo-corrosion-resisting agent composition of a kind of MMN of being used for (a plurality of micro nozzle) coating machine, relate more specifically to a kind of photo-corrosion-resisting agent composition with improved uniformity coefficient and less pollution problem, this composition is suitable for the MMN coating machine of the large glass of the 5th generation production line (5th generation line), and helps to boost productivity and product quality.
Background technology
Along with increase,, need bigger glass and better panel particularly to the increase of panel (panel) demand of TV and monitor to LCD panel demand.Because this trend needs a kind of New Photoinduced resist that needs new process conditions of exploitation.Photoetching process on large glass is the important process of the throughput rate (line productivity) of decision production line.The coating performance of photoresist film, the existence of pollution, contrast, resolution, to the adhesion of substrate, remain in the quality that material on the film etc. directly influences the circuit that forms in the etching process procedure of back.Particularly, in photoetching process, utilize the pollution that forms after the coating machine painting photoresist to become the cause of coating inferior and bad CD uniformity coefficient.In etching process, PR (photoresist) is peeled off still existence of pollution afterwards, reduced the throughput rate and the product quality of LCD panel thus.For the MMN coating machine of the photoetching process that is used as large glass, this problem is more serious, and can produce the pollution of newtype.
Introduce use MMN coating machine for following reason.
For be coated with by single scanning be used for the 5th generation production line the glass of 1100 * 1250mm, need novel a plurality of micro nozzles (MMM).The length of nozzle is 1, and 100mm, nozzle bore have the spacing of diameter and the 0.3mm of 80 μ m.PR ejects (referring to Fig. 1) by nozzle bore.
Such nozzle is than conventional slit-rotation (slit ﹠amp; Spin) method has the following advantages: control the gap between glass and the nozzle easily; Can significantly reduce the waste of PR.
Yet,, can form various pollutions so if be coated with PR with MMN.What wherein bother most is that pollute at the center, pollute the side and cloud form is polluted (referring to Fig. 2).
The purpose of this invention is to provide a kind of photo-corrosion-resisting agent composition with improved uniformity coefficient and less pollution problem, this composition be suitable for the 5th generation production line the MMN coating machine of large glass, and help to boost productivity and product quality.
Another object of the present invention is that utilization is fit to the photo-corrosion-resisting agent composition of MMN coating machine and a kind of formation method of patterning is provided.
A further object of the present invention provides a kind of LCD circuit that contains the pattern of useful this method formation.
To achieve these goals, the invention provides a kind of photo-corrosion-resisting agent composition of the MMN of being applicable to coating machine, comprising:
(a) 5 to 30wt% the fluoropolymer resin shown in the Chemical formula 1;
(b) 2 to 10wt% two folded (diazide) nitrogen Photoactive compounds;
(c) 50 to 90wt% organic solvent; And
(d) 500 to 4000ppm silica-based surfactant,
Chemical formula 1
Here, R is C
1To C
4Alkyl, n are 15～10000 integers.
Preferably, R is a methyl.
The present invention also provides a kind of formation method of patterning, and this method comprises:
(a) painting photoresist composition and make its dry and step preparation photoresist film in substrate;
(b) step of the patterned mask of placement and this photoresist film that exposes; And
(c) make the photoresist film development that exposed to obtain the step of photoresist pattern.
The present invention also provides a kind of semiconductor devices that comprises the pattern that is formed by described method.
Description of drawings
Fig. 1 illustrates the coating process that utilizes the MMN coating machine.
Fig. 2 illustrates the pollution of the trouble that produces when using the MMN coating machine.
Fig. 3 and Fig. 4 illustrate the formation method of patterning of utilizing photoresist of the present invention.
Fig. 5 illustrates the center that produces when using the MMN coating machine and pollutes.
Fig. 6 a illustrates the photo-corrosion-resisting agent composition that uses comparative example 1 and 2 and forms pattern cloud form pollution afterwards.
Fig. 6 b illustrates the photo-corrosion-resisting agent composition that uses embodiment 1～3 and forms pattern cloud form pollution afterwards.
Summary of the invention
Hereinafter, the present invention is described in more detail.
The inventor has developed a kind of New Photoinduced resist composition of the MMN of being applicable to coating machine, and the content by control combination thing and solvent and surfactant can replace equipment and improve the PR material, pollutes and improves coating performance thereby prevent.
The invention is characterized in the photo-corrosion-resisting agent composition that is applicable to the MMN coating machine, this coating machine is applicable to LCD.
Preferably, the fluoropolymer resin of photo-corrosion-resisting agent composition of the present invention is the linear novolac resin of being represented by Chemical formula 1.Novolac resin is to make by the polycondensation of oxybenzene compound and aldehyde compound.For oxybenzene compound, can use phenol, metacresol, paracresol etc. separately or they are used in combination.For aldehyde compound, can use formaldehyde, benzaldehyde, acetaldehyde etc.Any acidic catalyst all can be used in the polycondensation of oxybenzene compound and aldehyde compound.Preferably, the molecular weight of novolac resin is 2000～12000.
The content of fluoropolymer resin is 5～30wt%, more preferably 10～20wt%.If the content of fluoropolymer resin is lower than 5wt%, viscosity is too low and can not obtain the coating of desired thickness so.In addition, if content surpasses 30wt%, viscosity is too high and can not obtain uniform substrate so.
In the photo-corrosion-resisting agent composition that is applicable to the MMN coating machine of the present invention, two triazo-compounds are as Photoactive compounds (PAC).
Two nitrine Photoactive compounds can prepare two triazo-compounds such as polyhydroxy benzophenone, 1,2-naphthoquinone two azide and 2-diazo-1-naphthol-5-sulfonic acid by reacting two triazo-compounds.Preferably, use by 2,3,4 of the esterification preparation of tetrahydroxybenzophenone and 2-diazo-1-naphthol-5-sulfonic acid, 4 '-tetrahydroxybenzophenone-1,2-naphthoquinones two nitrine-5-sulphonic acid ester.
The content of Photoactive compounds is 2～10wt%, preferred 3～7wt%.If the content of Photoactive compounds is lower than 2wt%, film speed is too fast so, so the film residue becomes too low than (film remaining ratio).In addition, if content surpasses 10wt%, film speed becomes too slow so.
Photo-corrosion-resisting agent composition of the present invention comprises the organic solvent of 50～90wt%.For organic solvent, can use one or more solvents that are selected from propylene glycol monomethyl ether (PGMEA), ethyl lactate (EL), acetate 2-methoxyl ethyl ester (MMP), n-butyl acetate (nBA), propylene glycol monomethyl ether (PGME) and ethyl-3-ethoxy-c acid esters (EEP) separately, perhaps they are used in combination.More preferably, use PGMEA and the EEP of 10～50wt% or the mixed solvent of butyl acetate (nBA) that comprises 50～90wt%.
Photo-corrosion-resisting agent composition of the present invention comprises silica-based surfactant so that minimize contamination and improve coating performance.
Preferably, polyoxyalkylene dimethyl polysiloxane multipolymer is used as silica-based surfactant.Preferably, the content of silica-based surfactant is 500～4000ppm.
Photo-corrosion-resisting agent composition of the present invention may further include has C
1～C
4The nitrogenous crosslinking chemical of alkanol groups is as promoting the crosslinked adjuvant of used novolac resin in the fluoropolymer resin.Used nitrogenous crosslinking chemical can be to be selected from the following material one or more, and described material comprises one of one of condensation product, methylolurea alkyl aldehydes condensation product, methylolurea alkyl ether series of condensation product, melamine and the formaldehyde of urea and formaldehyde and methylol melamine alkyl ether series.In 100 weight portion photo-corrosion-resisting agent compositions, the content of used nitrogenous crosslinking chemical can be 2～35 weight portions, more preferably 5～25 weight portions.Wherein, if the content of nitrogenous crosslinking chemical is lower than 2 weight portions, can not obtain sufficient cross-linked structure so.And if content surpasses 35 weight portions, the thickness of unexposed portion just reduces too much so.
If desired, thereby photo-corrosion-resisting agent composition of the present invention may further include adjuvant improves processing characteristics, these adjuvants such as colorant, dyestuff, anti-striped agent (anti-striation agent), plastifier, tackifier and surfactant.
Hereinafter, describe the formation method of patterning of utilizing photo-corrosion-resisting agent composition of the present invention with reference to the accompanying drawings in detail.
Utilize the MMN coating machine that photo-corrosion-resisting agent composition of the present invention is coated in the substrate to form photoresist film (referring to Fig. 1).Photo-corrosion-resisting agent composition can spray-distribute coating (spray-dispense coat) (PR ejects rotation then from gap nozzle) or spin coating.Preferably, photo-corrosion-resisting agent composition is carried out slit-rotary coating.For example utilize spin coating method, can be according to solid content, to obtain to have the coating of desired thickness from cyclone and spin method change photo-corrosion-resisting agent composition.
Substrate can be dielectric film or conducting film.Made by silicon, aluminium, indium tin oxide (ITO), indium-zinc oxide (IZO), molybdenum, silicon dioxide, doped silica, silicon nitride, tantalum, copper, polysilicon, pottery, aluminium/copper mixture, various fluoropolymer resins etc., any substrate that can form pattern all can be used as substrate.
To be coated on suprabasil photo-corrosion-resisting agent composition and be heated to 80～130 ℃.This technology is called soft baking process.Carry out this thermal treatment to make solvent evaporation and can not make the solid constituent thermal decomposition of photo-corrosion-resisting agent composition.Usually, by soft baking solvent strength to be reduced to minimum in suggestion, so thermal treatment is performed until most of solvent evaporation and falls.Particularly, to being used for the photoresist film of LCD circuit, soft bake process is performed until coated film thickness and reduces to and be lower than 2 μ m.
The substrate that exposed 10 is immersed in the alkaline-based developers, does not go to manage it, up to the exposed portion dissolving (referring to Fig. 4) that makes all or most of photoresist film.For developer solution, can use the aqueous solution that contains basic anhydride, ammonium hydroxide or tetramethylammonium hydroxide.
Exposed portion can be heat-treated to improve stickability and the chemical-resistant to photoresist film once more by being dissolved in the substrate of removing in the developer solution.This process is called hard bake process.Described thermal treatment is carried out under the temperature that is lower than the photoresist film softening point, is preferably 90～140 ℃.When thermal treatment finishes, just form required photoresist pattern 12a.
Then, the substrate that forms photoresist pattern 12a is above handled with corrosive solution or gaseous plasma.In this course, the unexposed portion at the bottom of the photoresist pattern protecting group.Then, utilize suitable stripping machine to remove the photoresist pattern, have the microcircuit pattern of desired layout with formation, this layout obtains in substrate.
Photo-corrosion-resisting agent composition of the present invention has improved the uniformity coefficient of photoresist film, and has solved pollution problem, therefore can be used for various semiconductor devices, comprises LCD.
Hereinafter, by embodiment and comparative example the present invention is described in more detail.Yet following example is only used for understanding the present invention, and the present invention is not subjected to the restriction of following embodiment.
Embodiment
Preparation embodiment :/to the preparation of novolac resin
45 gram metacresols, 55 gram paracresol, 65 gram formaldehyde and 0.5 gram oxalic acid are placed top (overhead) stirrer, stir with the thing that is uniformly mixed.Reaction mixture is heated to 95 ℃, continues 4 hours in this temperature.Replace reflux condenser with distiller, reaction mixture was 110 ℃ of distillations 2 hours.Thereby vacuum distillation carries out removing in 2 hours residual monomer at 180 ℃, and with the novolac resin cool to room temperature that melts.The number-average molecular weight of novolac resin is defined as 3,500 (based on polystyrene) by GPC.
Embodiment 1
With 5 grams 2,3,4,4-tetrahydroxybenzophenone-1, the novolac resin (fluoropolymer resin) that 2-naphthoquinones two nitrine-5-sulphonic acid ester (emulsion), 21 grams are made in preparation embodiment 1,50/50 potpourri (organic solvent) and the 500ppm polyoxyalkylene dimethyl polysiloxane multipolymer (silica-based surfactant) of 74 gram PGMEA/nBA are put into the reactor of being furnished with cooling tube and stirrer.Potpourri at room temperature stirs with 40rpm and prepares photo-corrosion-resisting agent composition.
(thickness is on substrate of glass 0.7mm) at 0.7T in the photo-corrosion-resisting agent composition dropping of making.Glass rotates with constant speed, is the film of 1.50 μ m by carrying out dry in 90 seconds 115 ℃ of heating to form thickness then.Patterned mask is positioned on this film, and UV-irradiation is on film.Then substrate is immersed in 2.38% the tetramethylammonium hydroxide aqueous solution 60 seconds removing the part that is exposed under the ultraviolet light, and forms the photoresist pattern.
Embodiment 2
Utilize 50/50 potpourri of PGMEA/EEP to finish the production run of embodiment 1 as organic solvent.
Embodiment 3
Increase the 500ppm surfactant and finish the production run of embodiment 2.
Comparative example 1
Using usually, used LCD photo-corrosion-resisting agent composition forms the photoresist pattern.Photo-corrosion-resisting agent composition comprises conventional novolac resin, DNQ PAC, organic solvent and fluorine-based surfactant.
Comparative example 2
The photo-corrosion-resisting agent composition that has good susceptibility by utilization forms the photoresist pattern.
The test example
Film thickness uniformity coefficient and the cloud form estimated in embodiment 1～3 and the comparative example 1～2 are polluted.
A. assessment centers pollutes and film thickness uniformity coefficient (coating uniformity coefficient)
The pollution that center of glass forms is fuzzy lines and clear distinct lines (referring to Fig. 5).
For the thickness of each coated film, the film thickness uniformity coefficient is about ± and 2%.By following formula calculating film thicknesses uniformity coefficient.The results are shown in the following table 1.
Formula 1
Film thickness uniformity coefficient (%)=[(maximum ga(u)ge-minimum thickness)/(maximum ga(u)ge+minimum thickness)] * 100
Table 1
| Fuzzy lines (μ m) | Clear distinct lines (μ m) | Film thickness uniformity coefficient (%) | |
| Comparative example 1 | ?80 | ?48 | ??2.8 |
| Comparative example 2 | ?70 | ?55 | ??2.4 |
| Embodiment 1 | ?- | ?80 | ??2.87 |
| Embodiment 2 | ?80 | ?- | ??2.22 |
| Embodiment 3 | ?60 | ?- | ??2.4 |
As shown in table 1, utilize the formed photoresist film of photo-corrosion-resisting agent composition of embodiment 1 to 3 preparation to compare with 2 photoresist films that form with comparative example 1, film thickness uniformity coefficient (coating uniformity coefficient) is quite or better.
And with regard to polluted at the center, the fuzzy lines of embodiment 2 and embodiment 3 were suitable with the fuzzy lines of comparative example 1 and 2, importantly, do not have clear distinct lines.When can't see fuzzy lines or clear distinct lines, minimum PR film thickness is to be the value of unit with μ m.Baking was before at the PR of formation on glass film thickness after minimum PR film thickness referred to coating.That is to say that minimum PR film thickness is more little, it is just few more then to be ejected into PR on glass by the MMN coating machine, and it has economic advantages.
B. estimating cloud form pollutes
The evaluation result that cloud form is polluted is shown among Fig. 6 a (comparative example 1 and 2) and Fig. 6 b (embodiment 1～3).Comparative example 1 and 2 is denoted as A and B, and embodiment 1 to 3 is denoted as C, D and E.
According to the evaluation result that cloud form is polluted, can recognize that the photo-corrosion-resisting agent composition of embodiment 3 is best.This is because increased the amount of silica-based surfactant.
As mentioned above, embodiment 3 shows optimal results.This seemingly cooperative effect by PGMEA/EEP solvent system and silica-based surfactant cause.
As mentioned above, the photo-corrosion-resisting agent composition that is used for LCD circuit of the present invention has solved the pollution problem that the MMN coating machine that is used for large-scale substrate glass occurs, and improved coating performance, so it can be in industrial utilization, and expection is obviously boosted productivity.
Although describe the present invention in detail with reference to preferred implementation, those of ordinary skill in the art knows and can carry out various modifications and replacement and do not break away from as the spirit and scope of the present invention as illustrated in the additional claim it.
Claims (10)
1. photo-corrosion-resisting agent composition that is used for the MMN coating machine comprises:
(a) fluoropolymer resin shown in the following Chemical formula 1 of 5～30wt%;
(b) the two nitrine Photoactive compounds of 2～10wt%;
(c) organic solvent of 50～90wt%; And
(d) silica-based surfactant of 500～4000ppm,
Chemical formula 1
In the formula, R is C
1～C
4Alkyl, n are 15～10000 integers.
2. according to the photo-corrosion-resisting agent composition of claim 1, wherein said fluoropolymer resin is that molecular weight is 2000～12000 novolac resin.
3. according to the photo-corrosion-resisting agent composition of claim 1, wherein said organic solvent is selected from one or more materials in propylene glycol methyl ether acetate (PGMEA), ethyl acetate (EL), acetate 2-methoxyl ethyl ester (MMP), n-butyl acetate (nBA), propylene glycol monomethyl ether (PGME) and ethyl-3-ethoxy-c acid esters (EEP).
4. according to the photo-corrosion-resisting agent composition of claim 1, wherein said organic solvent is the potpourri of the propylene glycol methyl ether acetate (PGMEA) of 50～90wt% and the ethyl of 10～50wt%-3-ethoxy-c acid esters (EEP).
5. according to the photo-corrosion-resisting agent composition of claim 1, wherein said silica-based surfactant is a polyoxyalkylene dimethyl polysiloxane copolymer compound.
6. according to the photo-corrosion-resisting agent composition of claim 1, wherein said composition further comprises one or more and is selected from following nitrogenous crosslinking chemical: the condensation product of urea and formaldehyde, the condensation product of melamine and formaldehyde, methylolurea alkyl aldehydes condensation product, one of one of methylolurea alkyl ether series matter, and methylol melamine alkyl ether series matter.
7. one kind forms method of patterning, and it comprises:
(a) coating and makes its dry and step preparation photoresist film according to the photo-corrosion-resisting agent composition of claim 1 in substrate;
(b) patterned mask is placed in the substrate, and makes the photoresist film step of exposing; And
(c) make the photoresist film development that has exposed, to obtain the step of photoresist pattern.
8. according to the formation method of patterning of claim 6, wherein said photo-corrosion-resisting agent composition is by injection-distribution method or spin coating method coating.
9. according to the formation method of patterning of claim 6, wherein said photo-corrosion-resisting agent composition is by slit-rotating coating coating.
10. semiconductor devices, it has the pattern that the method by claim 7 forms.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030000270A KR100973799B1 (en) | 2003-01-03 | 2003-01-03 | Photoresist composition for multi-micro nozzle head coater |
| KR0000270/03 | 2003-01-03 | ||
| KR0000270/2003 | 2003-01-03 |
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| Publication Number | Publication Date |
|---|---|
| CN1550897A true CN1550897A (en) | 2004-12-01 |
| CN100501571C CN100501571C (en) | 2009-06-17 |
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| CNB2004100283331A Expired - Fee Related CN100501571C (en) | 2003-01-03 | 2004-01-03 | Photoresist composition for multi-micro nozzle head coater |
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| Country | Link |
|---|---|
| US (1) | US7378230B2 (en) |
| JP (1) | JP4405816B2 (en) |
| KR (1) | KR100973799B1 (en) |
| CN (1) | CN100501571C (en) |
| TW (1) | TWI317459B (en) |
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| CN1800981B (en) * | 2004-12-24 | 2010-12-01 | 三星电子株式会社 | Photosensitive resin composition, thin film panel made with photosensitive composition, and method for manufacturing thin film panel |
| CN101553758B (en) * | 2006-12-25 | 2012-04-04 | Az电子材料（日本）株式会社 | Pattern forming method and photosensitive resin composition used therefor |
| CN114479020A (en) * | 2022-02-22 | 2022-05-13 | 中国科学院化学研究所 | Polymer semiconductor photoresist with side chain containing azide group, and preparation method and application thereof |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100973799B1 (en) * | 2003-01-03 | 2010-08-03 | 삼성전자주식회사 | Photoresist composition for multi-micro nozzle head coater |
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| EP2175319A4 (en) * | 2007-07-26 | 2010-08-25 | Sumitomo Bakelite Co | Positive photosensitive resin composition for spray coating, method for forming cured film using the same, cured film and semiconductor device |
| JP2009151266A (en) * | 2007-11-29 | 2009-07-09 | Jsr Corp | Positive radiation-sensitive resin composition |
| KR101632965B1 (en) * | 2008-12-29 | 2016-06-24 | 삼성디스플레이 주식회사 | Photoresist composition and method of fabricating thin film transistor substrate |
| JP5329999B2 (en) * | 2009-01-29 | 2013-10-30 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | Pattern formation method |
| JP5924760B2 (en) * | 2011-12-06 | 2016-05-25 | 東京応化工業株式会社 | Method for producing resist for spinless coating |
| KR101571711B1 (en) * | 2015-02-06 | 2015-11-25 | 동우 화인켐 주식회사 | Thinner composition |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4996080A (en) * | 1989-04-05 | 1991-02-26 | Olin Hunt Specialty Products Inc. | Process for coating a photoresist composition onto a substrate |
| US5324620A (en) * | 1989-09-08 | 1994-06-28 | Ocg Microeletronic Materials, Inc. | Radiation-sensitive compositions containing novolak polymers made from four phenolic derivatives and an aldehyde |
| US5346799A (en) * | 1991-12-23 | 1994-09-13 | Ocg Microelectronic Materials, Inc. | Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde |
| JPH0782396A (en) * | 1993-09-10 | 1995-03-28 | Nippon Ee R C Kk | Resin product with shielding part and production thereof |
| JPH08110634A (en) * | 1994-10-07 | 1996-04-30 | Fuji Photo Film Co Ltd | Photoresist coating solution |
| DE69610149T2 (en) * | 1995-06-02 | 2001-04-05 | Fuji Photo Film Co Ltd | Process for producing a polyphenol compound and positive working photoresist composition containing polyphenol compound |
| US6117610A (en) * | 1997-08-08 | 2000-09-12 | Kodak Polychrome Graphics Llc | Infrared-sensitive diazonaphthoquinone imaging composition and element containing non-basic IR absorbing material and methods of use |
| CN1224858A (en) | 1998-01-30 | 1999-08-04 | 莫顿国际股份有限公司 | Positive-tone photoimageable crosslinkable coating |
| US6159656A (en) | 1998-06-26 | 2000-12-12 | Fuji Photo Film Co., Ltd. | Positive photosensitive resin |
| JP3640290B2 (en) * | 1998-10-02 | 2005-04-20 | 東京応化工業株式会社 | Positive photoresist coating liquid and display element substrate using the same |
| JP4007570B2 (en) | 1998-10-16 | 2007-11-14 | 富士フイルム株式会社 | Positive resist composition |
| JP3969909B2 (en) | 1999-09-27 | 2007-09-05 | 富士フイルム株式会社 | Positive photoresist composition |
| US6232031B1 (en) * | 1999-11-08 | 2001-05-15 | Ano-Coil Corporation | Positive-working, infrared-sensitive lithographic printing plate and method of imaging |
| US6808860B2 (en) | 2000-04-17 | 2004-10-26 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
| US6692897B2 (en) | 2000-07-12 | 2004-02-17 | Fuji Photo Film Co., Ltd. | Positive resist composition |
| EP1179750B1 (en) | 2000-08-08 | 2012-07-25 | FUJIFILM Corporation | Positive photosensitive composition and method for producing a precision integrated circuit element using the same |
| JP2002079163A (en) * | 2000-09-05 | 2002-03-19 | Toppan Printing Co Ltd | Slit coater |
| JP4253427B2 (en) | 2000-09-19 | 2009-04-15 | 富士フイルム株式会社 | Positive resist composition |
| JP4190167B2 (en) | 2000-09-26 | 2008-12-03 | 富士フイルム株式会社 | Positive resist composition |
| US6749987B2 (en) | 2000-10-20 | 2004-06-15 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| KR100907268B1 (en) | 2001-04-05 | 2009-07-13 | 후지필름 가부시키가이샤 | Positive resist composition and pattern forming method using the same |
| KR100973799B1 (en) * | 2003-01-03 | 2010-08-03 | 삼성전자주식회사 | Photoresist composition for multi-micro nozzle head coater |
-
2003
- 2003-01-03 KR KR1020030000270A patent/KR100973799B1/en active IP Right Grant
-
2004
- 2004-01-02 TW TW093100059A patent/TWI317459B/en not_active IP Right Cessation
- 2004-01-03 CN CNB2004100283331A patent/CN100501571C/en not_active Expired - Fee Related
- 2004-01-05 JP JP2004000337A patent/JP4405816B2/en not_active Expired - Fee Related
- 2004-01-05 US US10/750,845 patent/US7378230B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1800981B (en) * | 2004-12-24 | 2010-12-01 | 三星电子株式会社 | Photosensitive resin composition, thin film panel made with photosensitive composition, and method for manufacturing thin film panel |
| CN101553758B (en) * | 2006-12-25 | 2012-04-04 | Az电子材料（日本）株式会社 | Pattern forming method and photosensitive resin composition used therefor |
| CN114479020A (en) * | 2022-02-22 | 2022-05-13 | 中国科学院化学研究所 | Polymer semiconductor photoresist with side chain containing azide group, and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI317459B (en) | 2009-11-21 |
| CN100501571C (en) | 2009-06-17 |
| TW200428143A (en) | 2004-12-16 |
| US20040144753A1 (en) | 2004-07-29 |
| JP4405816B2 (en) | 2010-01-27 |
| KR100973799B1 (en) | 2010-08-03 |
| KR20040062756A (en) | 2004-07-09 |
| US7378230B2 (en) | 2008-05-27 |
| JP2004213013A (en) | 2004-07-29 |
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