CN1525801A - Apparatus with self-assembly molecule as electron injection layer of organic LED and method thereof - Google Patents
Apparatus with self-assembly molecule as electron injection layer of organic LED and method thereof Download PDFInfo
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- CN1525801A CN1525801A CNA031049427A CN03104942A CN1525801A CN 1525801 A CN1525801 A CN 1525801A CN A031049427 A CNA031049427 A CN A031049427A CN 03104942 A CN03104942 A CN 03104942A CN 1525801 A CN1525801 A CN 1525801A
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Abstract
The invention is a device for using self-assembly molecular as the electron ejecting layer of emitting LED and the method. It uses a kind of self-assembly molecular as electron ejecting layer, it forms a self-assembly molecular film with self pair pole on negative metal layer, the film is used as an electron ejecting layer, which binds with negative metal through dipole and donor of self-assembly molecular, the dipole direction of self-assembly molecular can rebound to the improvement of electron ejecting efficiency, thus increases the emitting efficiency of emitting LED component, and decrease the start voltage of emitting LED component.
Description
Technical field
The present invention relates to the device and method of a kind of self assembly molecule, relate in particular to the device and method that a kind of dipolar nature by self assembly molecule increases the injectability and the efficiency of transmission of electronics as the electron injecting layer of Organic Light Emitting Diode.
Background technology
Because Organic Light Emitting Diode (Organic light emitting diode; OLED) possess self-luminous, thin thickness, reaction speed is fast, the visual angle is wide, resolution is good, high brightness, can be used for multiple advantages such as flexibility panel and serviceability temperature scope be wide, the film-type LCD that is considered to continue (Thin film transistor liquid crystal display; TFT-LCD) be flat-panel screens technology of new generation, and the principle of luminosity of this Organic Light Emitting Diode (OLED) is to utilize properties of materials, with the hole combination on luminescent layer of electronics electricity, the energy that produces is promoted to excitation state with light emitting molecule by ground state, when electronics falls back ground state by excitation state, its energy disengages with the form of ripple, thereby reaches the generation of the light-emitting component that different wave length is arranged.
Wherein anode (Anode) is an ITO electro-conductive glass film, with sputter or evaporation mode, be attached on glass or the transparent plastic substrate, negative electrode then contains metals such as Mg, Al, Li, then be the light-emitting zone that a plurality of organic films form between two electrodes, comprise electric hole implanted layer (Hole injection layer; HIL), electric hole transfer layer (Hole Transport Layer; HTL), organic luminous layer (Emitting layer), and electron transfer layer (ElectronTransport Layer; ETL), when quantizing to produce in actual applications,, also can comprise other different films sometimes based on consideration to different demands.
Though Organic Light Emitting Diode (OLED) has many advantages, yet in order to increase luminous efficiency, reduce starting voltage, we must increase electronics, the injection in electricity hole, so cathode layer materials is selected the metal (for example magnesium (Mg) or calcium (Ca)) of low work function usually, be beneficial to the injection of electronics, but the metal of low work function relatively activity is also bigger, produce oxidation with aqueous vapor easily, cause anticathode destruction, can adopt the composition metal negative electrode this moment, and (for example magnesium (Mg) adds silver (Ag), aluminium (Al) adds lithium (Li)), indium tin oxide (IndiumTin Oxide, ITO), indium-zinc oxide (Indium Zinc Oxide, IZO), another practice is to add one deck lithium fluoride (LiF) as thin as a wafer between negative electrode and organic layer, and lithium fluoride (LiF) can reduce electronics is injected into organic layer from negative electrode energy barrier effectively.
Promptly, known Organic Light Emitting Diode (OLED) processing procedure is an anodic conductive film evaporation luminous organic material, covered cathode metal more at last, the electric hole of institute's output is more consistent to the energy rank between the organic luminous layer by anode, and the energy jump of cathodic metal and organic luminous layer is apart from bigger, therefore difficulty overcomes the required energy barrier of electronics injection, existing technology is to utilize alkali metal group or alkaline earth metal material aluminium (Al) or silver (Ag) the formation composite material high with stability, indium tin oxide (ITO) or indium-zinc oxide (IZO), so as to, improve the electronics injectability, but, habitual at present as electron injecting layer (Electron injection Layer; EIL) lithium fluoride (LiF) has the problem on its industry, because the film thickness of lithium fluoride (LiF) must be controlled in 2 nanometers, so be difficult for overcoming in the problem solution of processing procedure stability and reproducibility.
Summary of the invention
So main purpose of the present invention is to solve above-mentioned defective, avoids the existence of defective, the present invention utilizes the dipole directional characteristic of self assembly molecule, and self assembly molecule is used as electron injecting layer (Electron injection Layer whereby; EIL), can get a processing procedure stability height, and the material of reproducibility, form an electron injecting layer (EIL) and increase the electronics injectability, so as to increasing luminous efficiency, reduce starting voltage.
The present invention mainly utilizes the Organic Light Emitting Diode (OLED) of a kind of self assembly molecule as electron injecting layer (EIL), on a substrate, form a cathodic metal layer earlier earlier, on this cathodic metal layer, form the self assembly molecule film of a tool dipole again with infusion method or steaming fumigation, this film is as an electron injecting layer (EIL), evaporation electron transfer layer (ETL) in regular turn again, luminescent layer (Emitting layer), electricity hole transport layer (HTL), at last again sputter one conductive film as anode layer, dipolar nature by self assembly molecule, and execute son (donor) and cathodic metal bond, then the formed dipole direction of self assembly molecule will help the raising of electron injection efficiency, and the luminous efficiency of increase Organic Light Emitting Diode (OLED) element, and the starting voltage of reduction Organic Light Emitting Diode (OLED) element.
Description of drawings
Fig. 1 is an organigram of the present invention.
Fig. 2 is a self assembly molecule dipole direction schematic diagram of the present invention.
Fig. 3 is a manufacture method schematic flow sheet of the present invention.
Embodiment
Relevant detailed description of the present invention and technology contents, existing conjunction with figs. is described as follows:
See also shown in Figure 1, it is organigram of the present invention, as shown in the figure: the present invention forms a cathodic metal layer 20 earlier on Organic Light Emitting Diode (OLED) substrate 10, the composite material that metal material that this cathodic metal layer 20 is alkali metal group or alkaline earth and aluminium (Al) or silver (Ag) form, indium tin oxide (ITO), indium-zinc oxide (IZO), be attached to cathodic metal layer 20 surface with infusion method or steaming fumigation again and form self assembly molecule films 30 that have from dipole, with present existing self assembly molecule be aminomethylphosphonicacid (hereinafter to be referred as: AMPA), and this film is the electron injecting layer as Organic Light Emitting Diode (OLED) element, again on this electron injecting layer (EIL) in regular turn evaporation form an electron transfer layer 40 (EIL), luminescent layer 50 (Emitting layer), electricity hole transport layer 60 (HTL), sputter forms a conductive film as anode layer 70 more at last.
In general molecule, because the acidic group root forms acceptor (acceptor) easily, the base root is then for executing son (donor), the acidic group root easily and the metal surface bond again, and cause the dipole direction to be unfavorable for that electronics injects, but the acidic group root can form Shi Zi (donor) under some condition, another side base root then is an acceptor (acceptor), for example AMPA promptly has this characteristic, dipolar nature by self assembly molecule AMPA, and the acidic group root execute son (donor) and cathodic metal bond, then the formed dipole direction of self assembly molecule AMPA will help the raising of electron injection efficiency.
See also shown in Figure 2, it is self assembly molecule AMPA dipole direction schematic diagram of the present invention, as shown in the figure: this has self assembly molecule film 30 from dipole as electron injecting layer, and the phosphate radical of this self assembly molecule (phosphate) meeting and cathodic metal layer 20 bond, therefore what form the acidic group root executes son (donor) and cathodic metal layer 20 bond, and the acceptor of base root (acceptor) and the state of electron transfer layer 40 bonds form the dipole of specific direction.
Please consulting shown in Figure 3ly simultaneously, is manufacturing installation schematic flow sheet of the present invention, and its detailed manufacturing step is:
A) substrate 10 cleans and patterning, form the cathodic metal layer 20 of an Organic Light Emitting Diode (OLED) element, composite material, indium tin oxide (ITO), indium-zinc oxide (IZO) that metal material that this cathodic metal layer 20 is alkali metal group or alkaline earth and aluminium (Al) or silver (Ag) form;
B) with infusion method or steam fumigation and form one and have from the self assembly molecule film 30 of dipole electron injecting layer (EIL) as Organic Light Emitting Diode (OLED) element, this electron injecting layer is attached to cathodic metal layer 20 surface, and this self assembly molecule with the acidic group root as executing son, and the dipole direction of self assembly molecule is with acidic group root and cathodic metal layer 20 bond;
C) evaporation forms the electron transfer layer 40 (ETL) of an Organic Light Emitting Diode (OLED) element on above-mentioned electron injecting layer;
D) go up the luminescent layer 50 (Emitting layer) that evaporation forms an Organic Light Emitting Diode (OLED) element at above-mentioned electron transfer layer 40 (ETL);
E) evaporation forms the electric hole transport layer 60 (HTL) of an Organic Light Emitting Diode (OLED) element on above-mentioned luminescent layer 50;
F) sputter one conductive film on above-mentioned electric hole transport layer 60, this conductive film is as the anode layer 70 of Organic Light Emitting Diode (OLED) element.
In the physical significance of " dipole ", be meant that two equate but opposite in sign, the electric charge that separates limited distance is called " dipole ", the electric charge size then is called " dipole moment " with the product of relative distance, be one to have the size and the physical quantity of direction, also because chemical bond has dipole moment, so the dipole moment of polyatomic molecule can be considered the vector sum of each several part bond dipole moment, and for electronics, the potential energy size is consistent with the dipole moment direction, therefore electronics can conduct to positive dipole position by the negative dipole position easily, if but on the contrary then electronics will be sent to negative dipole by positive dipole, then must overcome energy barrier, therefore for the electronics of the cathode layer of Organic Light Emitting Diode (OLED) element will be injected into organic luminous layer 50 (Emittinglayer), self assembly molecule execute son (donor) (negative dipole position) must with the cathodic metal bond, so the formed dipole direction of self assembly molecule just helps electronics to conduct to organic luminous layer 50 (Emitting layer) by the metallic cathode layer.
The present invention is that accelerated electron injects organic luminous layer 50 (Emittinglayer) by cathode layer, by (as shown in Figure 2) dipolar nature as self assembly molecule AMPA, the acidic group root that forms self assembly molecule AMPA is for executing son (donor) and cathode layer metal bond, can reduce the energy barrier between script cathode layer and the organic luminous layer 50, therefore can reduce Organic Light Emitting Diode (OLED) element starting voltage, also increase the electronics injectability, the efficient that electronics and electric hole are combined on luminescent layer 50 (Emitting layer) improves, and improves luminous efficiency.
The above only is preferred embodiment of the present invention, can not with qualification scope of the invention process, promptly the equalization of being done according to the present patent application claim changes and modifies, and all should still belong to the scope that patent of the present invention contains.
Claims (6)
1. a self assembly molecule is characterized in that comprising as the device of the electron injecting layer of Organic Light Emitting Diode:
One substrate (10);
One is positioned at the cathodic metal layer (20) on the aforesaid substrate (10);
One is positioned at the self assembly molecule film (30) that has on the above-mentioned cathodic metal layer (20) from dipole, the acidic group root of this self assembly molecule be execute son and with cathodic metal layer (20) bond, this self assembly molecule film (30) is as an electron injecting layer;
One is positioned at the electron transfer layer (40) on the above-mentioned electron injecting layer;
One is positioned at the luminescent layer (50) on the above-mentioned electron transfer layer;
One is positioned at the electric hole transport layer (60) on the above-mentioned luminescent layer;
One is positioned at the anode layer (70) on the transport layer of above-mentioned electric hole;
By, the formed dipole direction of self assembly molecule will help the raising of electron injection efficiency, thereby increase the Organic Light Emitting Diode luminous efficiency, and reduce the Organic Light Emitting Diode starting voltage.
2. self assembly molecule according to claim 1 is characterized in that metal material and aluminium or silver-colored composite material, indium tin oxide, the indium-zinc oxide that forms that this cathodic metal layer (20) is alkali metal group or alkaline earth as the device of the electron injecting layer of Organic Light Emitting Diode.
3. self assembly molecule according to claim 1 is as the device of the electron injecting layer of Organic Light Emitting Diode, for executing son, and the dipole direction of this self assembly molecule is with acidic group root and cathodic metal layer (20) bond with the acidic group root for the self assembly molecule that it is characterized in that forming this electron injecting layer.
4. self assembly molecule according to claim 1 is characterized in that as the device of the electron injecting layer of Organic Light Emitting Diode this self assembly molecule is attached to cathodic metal layer (20) surface with infusion method.
5. self assembly molecule according to claim 1 is characterized in that as the device of the electron injecting layer of Organic Light Emitting Diode this self assembly molecule is attached to cathodic metal layer (20) surface to steam fumigation.
6. a self assembly molecule is characterized in that as the method for the electron injecting layer of Organic Light Emitting Diode fabrication steps comprises:
A) substrate (10) cleans and patterning, forms a cathodic metal layer (20);
B) with infusion method or steam fumigation and form one and have self assembly molecule film (30) from dipole as electron injecting layer, this electron injecting layer is attached to cathodic metal layer (20) surface;
C) evaporation forms an electron transfer layer (40) on above-mentioned electron injecting layer;
D) evaporation forms a luminescent layer (50) on above-mentioned electron transfer layer;
E) evaporation forms an electric hole transport layer (60) on above-mentioned luminescent layer;
F) go up sputter one conductive film in above-mentioned electric hole transport layer (60), this conductive film is as anode layer (70).
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| Application Number | Priority Date | Filing Date | Title |
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| CNA031049427A CN1525801A (en) | 2003-02-27 | 2003-02-27 | Apparatus with self-assembly molecule as electron injection layer of organic LED and method thereof |
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| CNA031049427A CN1525801A (en) | 2003-02-27 | 2003-02-27 | Apparatus with self-assembly molecule as electron injection layer of organic LED and method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103378297A (en) * | 2012-04-25 | 2013-10-30 | 群康科技(深圳)有限公司 | Organic light emitting diode and display device including same |
| CN103875088A (en) * | 2011-10-12 | 2014-06-18 | 浦项工科大学校产学协力团 | Simplified organic light emitting device and manufacturing method thereof |
| US9118033B2 (en) | 2012-04-25 | 2015-08-25 | Innolux Corporation | Organic light-emitting diode and display device employing the same |
| CN112018254A (en) * | 2020-09-04 | 2020-12-01 | 河南工程学院 | Quantum dot light-emitting diode based on benzenethiol derivative and preparation method thereof |
-
2003
- 2003-02-27 CN CNA031049427A patent/CN1525801A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103875088A (en) * | 2011-10-12 | 2014-06-18 | 浦项工科大学校产学协力团 | Simplified organic light emitting device and manufacturing method thereof |
| CN103875088B (en) * | 2011-10-12 | 2016-08-24 | 浦项工科大学校产学协力团 | The organic discharger simplified and manufacture method thereof |
| CN103378297A (en) * | 2012-04-25 | 2013-10-30 | 群康科技(深圳)有限公司 | Organic light emitting diode and display device including same |
| US9118033B2 (en) | 2012-04-25 | 2015-08-25 | Innolux Corporation | Organic light-emitting diode and display device employing the same |
| CN103378297B (en) * | 2012-04-25 | 2017-01-25 | 群康科技(深圳)有限公司 | Organic light emitting diode and display device including same |
| CN112018254A (en) * | 2020-09-04 | 2020-12-01 | 河南工程学院 | Quantum dot light-emitting diode based on benzenethiol derivative and preparation method thereof |
| CN112018254B (en) * | 2020-09-04 | 2023-09-19 | 河南工程学院 | Quantum dot light-emitting diode based on phenylthiol derivative and preparation method thereof |
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