CN103296059A - Active matrix organic light emitting display device and manufacturing method thereof - Google Patents

Active matrix organic light emitting display device and manufacturing method thereof Download PDF

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Publication number
CN103296059A
CN103296059A CN2013102516674A CN201310251667A CN103296059A CN 103296059 A CN103296059 A CN 103296059A CN 2013102516674 A CN2013102516674 A CN 2013102516674A CN 201310251667 A CN201310251667 A CN 201310251667A CN 103296059 A CN103296059 A CN 103296059A
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electrode layer
display device
active matrix
matrix organic
organic light
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苏子生
初蓓
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Abstract

The invention discloses an active matrix organic light emitting display device and manufacturing method thereof, belongs to the technical field of organic photoelectric devices and solves the technical problems that a display device is poor in performance and short in service life due to the fact that a top electrode layer cannot have both high conductivity and high transmittance, and the manufacturing process is complex, time-consuming and high is costs of an active matrix organic light emitting display device in the prior art. The active matrix organic light emitting display device sequentially comprises a thin film transistor substrate, a bottom electrode layer, an organic light emitting unit, a top electrode layer and an optical coupling output layer from bottom to top, wherein the bottom electrode layer is a cathode and made of metal or alloy, and the top electrode layer is an anode and made of metallic oxide. The active matrix organic light emitting display device has high optical coupling output, high efficiency and long service life, the manufacturing method is simple and easy and low in costs, and the damage to the organic light emitting unit during the manufacturing of the top electrode layer by utilizing a high temperature manufacture technology is avoided.

Description

Active matrix organic electroluminescent display device and preparation method thereof
Technical field
The present invention relates to a kind of active matrix organic electroluminescent display device and preparation method thereof, belong to the organic electro-optic device technical field.
Background technology
ORGANIC ELECTROLUMINESCENCE DISPLAYS is the Display Technique after cathode ray tube, liquid crystal display.Compound generation was luminous after ORGANIC ELECTROLUMINESCENCE DISPLAYS was injected with the machine semiconductive thin film by positive negative carrier, had all solid state, self-luminous, wide visual angle, high definition, high brightness, high-contrast, high response speed, ultra-thin, low-cost, low-power consumption, low temperature resistant, antidetonation, can realize flexible the demonstration and advantages such as double-sided display.Difference according to type of drive, ORGANIC ELECTROLUMINESCENCE DISPLAYS can be divided into passive matrix ORGANIC ELECTROLUMINESCENCE DISPLAYS (PassiveMatrix OrganicLightEmittingDisplay, PMOLED) and active matrix organic electroluminescence show (Active MatrixOrganicLightEmittingDisplay, AMOLED) two big classes.The passive matrix ORGANIC ELECTROLUMINESCENCE DISPLAYS, drives to scan mode as substrate with transparent conductive metal oxide backboard, because moment injects a large amount of electric currents and makes power consumption bigger, causes assembly to wear out easily and the shortening life-span, can't realize that large tracts of land shows simultaneously; The active matrix organic electroluminescence demonstration has adopted the thin-film transistor backboard as substrate, stores signal, each pixel of drive with electric capacity, reach luminous performance continuously, so driving voltage is low, power consumption is little, the life-span of assembly is long, realizes easily that simultaneously large tracts of land shows.
The active matrix organic electroluminescence demonstration has adopted the thin-film transistor backboard as substrate, if adopt from substrate one side output photo structure (being end ballistic device structure), thin film transistor substrate can reduce the aperture opening ratio of device, thus the resolution of limiting device and light extraction efficiency.Therefore active matrix organic electroluminescence shows the structure (i.e. top ballistic device structure) that generally adopts from top electrodes one side bright dipping.Top ballistic device structural requirement bottom electrode has high reflectivity, and top electrodes has high transmissivity.The positive interposed structure of the general employing of active matrix organic electroluminescent display device at present, be that bottom electrode is as anode, top electrodes is as negative electrode, and bottom electrode adopts high reflectance metallic films such as Ag usually, and top electrodes adopts active low workfunction metal films such as Al, Ca usually.In order to satisfy device from the top bright dipping, top metal electrode must enough thinly could have high transmitance in the visible region, and still, if top metal electrode is too thin, its conductivity also can descend, and can't obtain high performance device; On the other hand, this thin active low work function electrode very easily with airborne water, oxygen generation chemical interaction, thereby reduce the performance of device, shorten the useful life of device, simultaneously, in order to solve the influence to device lifetime of water, oxygen, must carry out complicated encapsulation to device, thereby increase device architecture and preparation technology's complexity, reduce productive temp, improved device cost.
Summary of the invention
For the top electrodes that solves active matrix organic electroluminescent display device in the prior art can't have both high conductivity and high permeability, cause that device performance is poor, the life-span is short, and complicated process of preparation, length consuming time, the technical problem that cost is high the invention provides a kind of active matrix organic electroluminescent display device and preparation method thereof.
Active matrix organic electroluminescent display device of the present invention, be followed successively by thin film transistor substrate, bottom electrode layer, organic light-emitting units, top electrode layer and optical coupling output layer from bottom to up, bottom electrode layer is as negative electrode, material is metal or alloy, top electrode layer is as anode, and material is conducting metal oxide.
Preferably, the material of described thin film transistor substrate is polysilicon, amorphous silicon, microcrystal silicon, oxide or organic substance.
Preferably, the material of described bottom electrode layer is aluminium, calcium or magnesium silver alloy.
Preferably, described organic light-emitting units is the single or multiple lift structure, and every layer material is lithium fluoride (LiF), 4,7-diphenyl-1,10-ferrosin (Bphen), N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB), molybdenum trioxide (MoO 3) or three (2-phenylpyridines) close iridium ((Ir (ppy) 3) 4,4'-two (9-carbazole) biphenyl (CBP) mixes.
Preferably, described conducting metal oxide is tin indium oxide (ITO) or vanadium oxide tin (IVO).
Preferably, the material of described optical coupling output layer is MoO 3Or oxine aluminium (Alq 3).
Preferably, described bottom electrode layer is to adopt physical vapour deposition (PVD) or chemical gaseous phase depositing process preparation, and thickness is 20-300nm, and described top electrode layer is to adopt the preparation of low temperature magnetic sputtering technology, and thickness is 10-300nm.
Preferably, described organic light-emitting units is to adopt vacuum heat deposition or wet processing preparation, and thickness is 50-500nm.
Preferably, described optical coupling output layer is to adopt vacuum heat deposition or wet processing preparation, and thickness is 10-200nm.
The preparation method of active matrix organic electroluminescent display device of the present invention may further comprise the steps:
(1) adopts physical vapour deposition (PVD) or chemical gaseous phase depositing process deposited bottom electrode layer on thin film transistor substrate;
(2) adopt vacuum heat deposition technology or wet processing to prepare organic light-emitting units in bottom electrode layer;
(3) adopt the low temperature magnetic sputtering technology to deposit top electrode layer at organic light-emitting units;
(4) adopt vacuum thermal evaporation technology or wet processing at top electrode layer deposition optical coupling output layer, obtain active matrix organic electroluminescent display device.
Beneficial effect of the present invention:
(1) active matrix organic electroluminescent display device of the present invention adopts inverted structure, and namely top electrode layer is as anode, and bottom electrode layer is as negative electrode;
(2) active matrix organic electroluminescent display device of the present invention adopts conductive metal oxide film as the top electrodes layer material, make top electrode layer have high conductivity and visible region high permeability, and then reduced the driving voltage of display device, improve the optical coupling output of device, increased the luminous efficiency of device;
(3) active matrix organic electroluminescent display device of the present invention adopts the low workfunction metal film as the bottom electrode layer material, make active low work function negative electrode away from the display device upper surface, not can with airborne water, oxygen generation chemical interaction, and the conducting metal oxide of top electrode layer has the characteristics of high stability in air, thereby has improved the useful life of display device;
(4) because top electrode layer of the present invention has high stability, so active matrix organic electroluminescent display device preparation method of the present invention does not have strict requirement to packaging technology and the condition of display device, preparation process is simple, cost is low, and when adopting the low temperature magnetic sputtering technology to prepare top electrode layer to have avoided the high temperature technology of preparing to prepare top electrode layer to the destruction of organic light-emitting units.
Description of drawings
Fig. 1 is the structural representation of active matrix organic electroluminescent display device of the present invention.
Among the figure: 1, thin film transistor substrate, 2, bottom electrode layer, 3, organic light-emitting units, 4, top electrode layer, 5, the optical coupling output layer.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
As shown in Figure 1, active matrix organic electroluminescent display device of the present invention is followed successively by thin film transistor substrate 1, bottom electrode layer 2, organic light-emitting units 3, top electrode layer 4 and optical coupling output layer 5 from bottom to up;
Thin film transistor substrate 1 can adopt polysilicon, amorphous silicon, microcrystal silicon, oxide and OTFT substrate; Bottom electrode layer 2 can adopt method preparations such as physical vapour deposition (PVD) or chemical vapour deposition (CVD), and material is metal or alloy, and as aluminium, calcium or magnesium silver alloy, thickness is 20-300nm; Organic light-emitting units 3 is the single or multiple lift structure, can adopt the preparation of vacuum heat deposition or wet processing, every layer material is organic material, inorganic material or organic/inorganic composite material, as LiF, Bphen (4,7-diphenyl-1,10-phenanthro line), NPB (4,4 '-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl), MoO 3Or Ir (ppy) 3(fac-tri (phenylpyridine) iridium (III)) doping CBP (4,4 '-N, N '-diCarbazole-biphenyl), thickness is 50-500nm; Top electrode layer 4 can adopt the preparation of low temperature magnetic sputtering technology, and material is the transparent conductive metal sull, and as ITO or IVO, thickness is 10-300nm; Optical coupling output layer 5 can adopt vacuum heat deposition or wet processing preparation, and material is the organic or inorganic material, as MoO 3Or Alq 3, thickness is 10-200nm.
The preparation method of above-mentioned active matrix organic electroluminescent display device, draw together following steps:
(1) adopt physical vapour deposition (PVD) or chemical gaseous phase depositing process deposited bottom electrode layer 2 on thin film transistor substrate 1, the material of bottom electrode layer 2 is metal or alloy, and thickness is 200-300nm;
(2) adopt vacuum heat deposition technology or wet processing at bottom electrode layer 2 preparation organic light-emitting units 3, the material of organic light-emitting units 3 is organic material, inorganic material or organic/inorganic composite material, and thickness is 50-500nm;
(3) adopt the low temperature magnetic sputtering technology at organic light-emitting units 3 deposition top electrode layers 4, the material of top electrode layer 4 is metal oxide, and thickness is 10-300nm;
(4) adopt vacuum thermal evaporation technology or wet processing at top electrode layer 4 deposition optical coupling output layers 5, the material of optical coupling output layer 5 is the organic or inorganic material, and thickness is 10-200nm, obtains active matrix organic electroluminescent display device.
Embodiment 1
(1) depositing Al is as bottom electrode layer 2 on low-temperature polysilicon film transistor substrate 1 to adopt the vacuum heat deposition technology, and thickness is 150nm;
(2) adopt the vacuum heat deposition technology on bottom electrode layer 2, to deposit LiF, Alq successively 3, NPB and MoO 3As organic light-emitting units 3, LiF, Alq 3, NPB and MoO 3Thickness be respectively 1nm, 70nm, 50nm and 10nm;
(3) adopt the low temperature magnetic sputtering technology to deposit ITO as top electrode layer 4 at organic light-emitting units 3, thickness is 150nm;
(4) adopt vacuum heat deposition technology depositing Al q on top electrode layer 4 3As optical coupling output layer 5, thickness is 40nm, obtains active matrix organic electroluminescent display device.
Embodiment 2
(1) adopt the vacuum heat deposition technology to deposit the Mg:Ag alloy as bottom electrode layer 2 at low-temperature polysilicon film transistor substrate 1, thickness is 150nm;
(2) adopt the vacuum heat deposition technology on bottom electrode layer 2, to deposit LiF, Bphen, Ir (ppy) successively 3Doping CBP (Ir (ppy) wherein 3Mass fraction be 8%), NPB and MoO 3As organic light-emitting units 3, LiF, Bphen, Ir (ppy) 3Doping CBP, NPB and MoO 3Thickness be respectively 1nm, 30nm, 30nm, 40nm and 10nm;
(3) adopt the low temperature magnetic sputtering technology to deposit IVO as top electrode layer 4 at organic light-emitting units 3, thickness is 200nm;
(4) depositing Al q3 is as optical coupling output layer 5 on top electrode layer 4 to adopt the vacuum heat deposition technology, and thickness is 50nm, obtains active matrix organic electroluminescent display device.
Obviously, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that the those of ordinary skill for described technical field, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.

Claims (10)

1. active matrix organic electroluminescent display device, be followed successively by thin film transistor substrate, bottom electrode layer, organic light-emitting units, top electrode layer and optical coupling output layer from bottom to up, it is characterized in that, bottom electrode layer is as negative electrode, material is metal or alloy, top electrode layer is as anode, and material is conducting metal oxide.
2. active matrix organic electroluminescent display device according to claim 1 is characterized in that, the material of described thin film transistor substrate is polysilicon, amorphous silicon, microcrystal silicon, oxide or organic substance.
3. active matrix organic electroluminescent display device according to claim 1 is characterized in that, the material of described bottom electrode layer is aluminium, calcium or magnesium silver alloy.
4. active matrix organic electroluminescent display device according to claim 1, it is characterized in that, described organic light-emitting units is the single or multiple lift structure, every layer material be lithium fluoride, 4,7-diphenyl-1,10-ferrosin, N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines, molybdenum trioxide or three (2-phenylpyridine) close iridium doping 4,4'-two (9-carbazole) biphenyl.
5. active matrix organic electroluminescent display device according to claim 1 is characterized in that, described conducting metal oxide is tin indium oxide or indium oxide vanadium.
6. active matrix organic electroluminescent display device according to claim 1 is characterized in that, the material of described optical coupling output layer is molybdenum trioxide or oxine aluminium.
7. active matrix organic electroluminescent display device according to claim 1, it is characterized in that, described bottom electrode layer is to adopt physical vapour deposition (PVD) or chemical gaseous phase depositing process preparation, thickness is 20-300nm, described top electrode layer is to adopt the preparation of low temperature magnetic sputtering technology, and thickness is 10-300nm.
8. active matrix organic electroluminescent display device according to claim 1 is characterized in that, described organic light-emitting units is to adopt vacuum heat deposition or wet processing preparation, and thickness is 50-500nm.
9. active matrix organic electroluminescent display device according to claim 1 is characterized in that, described optical coupling output layer is to adopt vacuum heat deposition or wet processing preparation, and thickness is 10-200nm.
10. the preparation method of the described active matrix organic electroluminescent display device of claim 1 is characterized in that, may further comprise the steps:
(1) adopts physical vapour deposition (PVD) or chemical gaseous phase depositing process deposited bottom electrode layer on thin film transistor substrate;
(2) adopt vacuum heat deposition technology or wet processing to prepare organic light-emitting units in bottom electrode layer;
(3) adopt the low temperature magnetic sputtering technology to deposit top electrode layer at organic light-emitting units;
(4) adopt vacuum thermal evaporation technology or wet processing at top electrode layer deposition optical coupling output layer, obtain active matrix organic electroluminescent display device.
CN2013102516674A 2013-06-24 2013-06-24 Active matrix organic light emitting display device and manufacturing method thereof Pending CN103296059A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109994652A (en) * 2019-04-08 2019-07-09 泰山学院 Cathode hydridization decorative layer and organic electroluminescence device and method
CN110993647A (en) * 2019-11-11 2020-04-10 潘小和 Method for manufacturing active matrix display device

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Publication number Priority date Publication date Assignee Title
CN101692484A (en) * 2009-08-17 2010-04-07 深圳丹邦投资集团有限公司 Reverse-structured organic light-emitting device and manufacturing method thereof
CN101884123A (en) * 2007-10-16 2010-11-10 全球Oled科技有限责任公司 Inverted OLED device with improved efficiency
CN102364716A (en) * 2010-06-17 2012-02-29 株式会社理光 Organic electroluminescence device, manufacturing method thereof, and light emission apparatus
CN102983284A (en) * 2012-12-06 2013-03-20 吉林大学 Top transmitting white light organic electroluminescent device with weak perspective effect

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101884123A (en) * 2007-10-16 2010-11-10 全球Oled科技有限责任公司 Inverted OLED device with improved efficiency
CN101692484A (en) * 2009-08-17 2010-04-07 深圳丹邦投资集团有限公司 Reverse-structured organic light-emitting device and manufacturing method thereof
CN102364716A (en) * 2010-06-17 2012-02-29 株式会社理光 Organic electroluminescence device, manufacturing method thereof, and light emission apparatus
CN102983284A (en) * 2012-12-06 2013-03-20 吉林大学 Top transmitting white light organic electroluminescent device with weak perspective effect

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109994652A (en) * 2019-04-08 2019-07-09 泰山学院 Cathode hydridization decorative layer and organic electroluminescence device and method
CN110993647A (en) * 2019-11-11 2020-04-10 潘小和 Method for manufacturing active matrix display device
CN110993647B (en) * 2019-11-11 2022-02-22 潘小和 Method for manufacturing active matrix display device

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Application publication date: 20130911