CN1523679A - 薄膜晶体管衬底及其制造方法 - Google Patents
薄膜晶体管衬底及其制造方法 Download PDFInfo
- Publication number
- CN1523679A CN1523679A CNA2004100053753A CN200410005375A CN1523679A CN 1523679 A CN1523679 A CN 1523679A CN A2004100053753 A CNA2004100053753 A CN A2004100053753A CN 200410005375 A CN200410005375 A CN 200410005375A CN 1523679 A CN1523679 A CN 1523679A
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- Prior art keywords
- film transistor
- active coating
- grid
- gate electrode
- thin film
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003042083A JP3991883B2 (ja) | 2003-02-20 | 2003-02-20 | 薄膜トランジスタ基板の製造方法 |
JP2003042083 | 2003-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1523679A true CN1523679A (zh) | 2004-08-25 |
CN1309091C CN1309091C (zh) | 2007-04-04 |
Family
ID=33025457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100053753A Expired - Lifetime CN1309091C (zh) | 2003-02-20 | 2004-02-11 | 薄膜晶体管衬底及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7709904B2 (zh) |
JP (1) | JP3991883B2 (zh) |
CN (1) | CN1309091C (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100362413C (zh) * | 2004-09-29 | 2008-01-16 | 财团法人工业技术研究院 | 一种制作电子装置的方法 |
CN104576653A (zh) * | 2013-10-16 | 2015-04-29 | 三星显示有限公司 | 薄膜晶体管阵列基板及其制造方法 |
CN105572992A (zh) * | 2015-12-31 | 2016-05-11 | 深超光电(深圳)有限公司 | 像素结构、阵列基板及像素结构制作方法 |
CN108335980A (zh) * | 2016-12-21 | 2018-07-27 | 爱思开海力士有限公司 | 半导体器件及其制造方法 |
CN109935637A (zh) * | 2019-03-19 | 2019-06-25 | 中国科学院物理研究所 | 一种高压薄膜晶体管 |
CN109994525A (zh) * | 2017-12-29 | 2019-07-09 | 乐金显示有限公司 | 有机发光显示面板和使用它的有机发光显示设备 |
CN112397562A (zh) * | 2020-11-13 | 2021-02-23 | 合肥鑫晟光电科技有限公司 | 一种显示基板及其制备方法、显示装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
WO2006030522A1 (ja) * | 2004-09-17 | 2006-03-23 | Sharp Kabushiki Kaisha | 薄膜半導体装置及びその製造方法 |
JP2006332400A (ja) | 2005-05-27 | 2006-12-07 | Nec Corp | 薄膜半導体装置およびその製造方法 |
JP2006337819A (ja) * | 2005-06-03 | 2006-12-14 | Canon Inc | 表示装置およびその駆動方法 |
WO2011027705A1 (ja) * | 2009-09-01 | 2011-03-10 | シャープ株式会社 | 半導体装置、アクティブマトリクス基板、及び表示装置 |
US20130207102A1 (en) * | 2012-02-15 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5559244B2 (ja) * | 2012-05-25 | 2014-07-23 | ゲットナー・ファンデーション・エルエルシー | 薄膜半導体装置 |
JP2015060996A (ja) | 2013-09-19 | 2015-03-30 | 株式会社東芝 | 表示装置及び半導体装置 |
KR20150043073A (ko) * | 2013-10-14 | 2015-04-22 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 제조 방법 |
US9704888B2 (en) * | 2014-01-08 | 2017-07-11 | Apple Inc. | Display circuitry with reduced metal routing resistance |
CN104078469B (zh) * | 2014-06-17 | 2017-01-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法,显示面板、显示装置 |
US9653493B2 (en) * | 2015-06-12 | 2017-05-16 | Eastman Kodak Company | Bottom-gate and top-gate VTFTs on common structure |
CN115768195A (zh) * | 2021-09-03 | 2023-03-07 | 乐金显示有限公司 | 薄膜晶体管基板以及包括薄膜晶体管基板的显示装置 |
Family Cites Families (25)
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JPS5335573B2 (zh) * | 1973-08-14 | 1978-09-28 | ||
KR970003903B1 (en) * | 1987-04-24 | 1997-03-22 | Hitachi Mfg Kk | Semiconductor device and fabricating method thereof |
JP2666103B2 (ja) | 1992-06-03 | 1997-10-22 | カシオ計算機株式会社 | 薄膜半導体装置 |
JP3537854B2 (ja) * | 1992-12-29 | 2004-06-14 | エルジー フィリップス エルシーディー カンパニー リミテッド | 薄膜トランジスタの製造方法 |
JP3180499B2 (ja) * | 1993-02-19 | 2001-06-25 | 富士ゼロックス株式会社 | 半導体装置の製造方法 |
JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
US6773971B1 (en) * | 1994-07-14 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions |
JP2701763B2 (ja) * | 1994-11-04 | 1998-01-21 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JPH08250742A (ja) | 1995-03-14 | 1996-09-27 | Toshiba Corp | 半導体装置 |
KR0175390B1 (ko) * | 1995-07-14 | 1999-02-18 | 김광호 | 다결정 규소 박막 트랜지스터 및 그 제조 방법 |
US5670812A (en) * | 1995-09-29 | 1997-09-23 | International Business Machines Corporation | Field effect transistor having contact layer of transistor gate electrode material |
JP3358526B2 (ja) * | 1998-02-18 | 2002-12-24 | 日本電気株式会社 | 高耐圧薄膜トランジスタの駆動方法 |
JP3282582B2 (ja) * | 1998-04-21 | 2002-05-13 | 日本電気株式会社 | トップゲート型薄膜トランジスタ及びその製造方法 |
US6255180B1 (en) * | 1998-05-14 | 2001-07-03 | Cypress Semiconductor Corporation | Semiconductor device with outwardly tapered sidewall spacers and method for forming same |
JP3102412B2 (ja) * | 1998-06-02 | 2000-10-23 | 日本電気株式会社 | 高耐圧薄膜トランジスタ |
JP3293563B2 (ja) * | 1998-08-13 | 2002-06-17 | 日本電気株式会社 | 電界効果トランジスタ及びその駆動方法 |
JP3183265B2 (ja) * | 1998-08-17 | 2001-07-09 | 日本電気株式会社 | 薄膜半導体装置 |
EP1020920B1 (en) * | 1999-01-11 | 2010-06-02 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a driver TFT and a pixel TFT on a common substrate |
JP4558121B2 (ja) * | 1999-01-11 | 2010-10-06 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
JP2000258798A (ja) * | 1999-03-05 | 2000-09-22 | Sanyo Electric Co Ltd | 表示装置 |
JP3239875B2 (ja) * | 1999-04-02 | 2001-12-17 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
JP4588833B2 (ja) | 1999-04-07 | 2010-12-01 | 株式会社半導体エネルギー研究所 | 電気光学装置および電子機器 |
JP5177923B2 (ja) * | 2001-06-29 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
JP4439766B2 (ja) * | 2001-08-02 | 2010-03-24 | シャープ株式会社 | 薄膜トランジスタ装置及びその製造方法 |
JP4084080B2 (ja) * | 2002-05-10 | 2008-04-30 | 株式会社日立製作所 | 薄膜トランジスタ基板の製造方法 |
-
2003
- 2003-02-20 JP JP2003042083A patent/JP3991883B2/ja not_active Expired - Lifetime
-
2004
- 2004-02-09 US US10/773,333 patent/US7709904B2/en not_active Expired - Lifetime
- 2004-02-11 CN CNB2004100053753A patent/CN1309091C/zh not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100362413C (zh) * | 2004-09-29 | 2008-01-16 | 财团法人工业技术研究院 | 一种制作电子装置的方法 |
CN104576653A (zh) * | 2013-10-16 | 2015-04-29 | 三星显示有限公司 | 薄膜晶体管阵列基板及其制造方法 |
CN105572992A (zh) * | 2015-12-31 | 2016-05-11 | 深超光电(深圳)有限公司 | 像素结构、阵列基板及像素结构制作方法 |
CN108335980A (zh) * | 2016-12-21 | 2018-07-27 | 爱思开海力士有限公司 | 半导体器件及其制造方法 |
US11462545B2 (en) | 2016-12-21 | 2022-10-04 | SK Hynix Inc. | Semiconductor device and method for fabricating the same |
CN109994525A (zh) * | 2017-12-29 | 2019-07-09 | 乐金显示有限公司 | 有机发光显示面板和使用它的有机发光显示设备 |
CN109994525B (zh) * | 2017-12-29 | 2023-06-13 | 乐金显示有限公司 | 有机发光显示面板和使用它的有机发光显示设备 |
CN109935637A (zh) * | 2019-03-19 | 2019-06-25 | 中国科学院物理研究所 | 一种高压薄膜晶体管 |
CN112397562A (zh) * | 2020-11-13 | 2021-02-23 | 合肥鑫晟光电科技有限公司 | 一种显示基板及其制备方法、显示装置 |
CN112397562B (zh) * | 2020-11-13 | 2023-09-22 | 合肥鑫晟光电科技有限公司 | 一种显示基板及其制备方法、显示装置 |
Also Published As
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US20040195568A1 (en) | 2004-10-07 |
JP3991883B2 (ja) | 2007-10-17 |
JP2004253596A (ja) | 2004-09-09 |
US7709904B2 (en) | 2010-05-04 |
CN1309091C (zh) | 2007-04-04 |
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