CN1523656A - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
- Publication number
- CN1523656A CN1523656A CNA031249876A CN03124987A CN1523656A CN 1523656 A CN1523656 A CN 1523656A CN A031249876 A CNA031249876 A CN A031249876A CN 03124987 A CN03124987 A CN 03124987A CN 1523656 A CN1523656 A CN 1523656A
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- China
- Prior art keywords
- mentioned
- layer
- copper
- film
- semiconductor device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 150
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000010949 copper Substances 0.000 claims abstract description 100
- 229910052802 copper Inorganic materials 0.000 claims abstract description 98
- 238000005530 etching Methods 0.000 claims abstract description 71
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 51
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000004888 barrier function Effects 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000011229 interlayer Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 19
- 238000009832 plasma treatment Methods 0.000 claims abstract description 18
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 64
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 55
- 239000007789 gas Substances 0.000 claims description 46
- 229910000906 Bronze Inorganic materials 0.000 claims description 41
- 239000010974 bronze Substances 0.000 claims description 41
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052786 argon Inorganic materials 0.000 claims description 31
- 239000003595 mist Substances 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000003344 environmental pollutant Substances 0.000 claims description 13
- 231100000719 pollutant Toxicity 0.000 claims description 13
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229920002313 fluoropolymer Polymers 0.000 claims description 4
- 239000004811 fluoropolymer Substances 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 8
- 239000000356 contaminant Substances 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- -1 argon ion Chemical class 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 125000001153 fluoro group Chemical group F* 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- RWNKSTSCBHKHTB-UHFFFAOYSA-N Hexachloro-1,3-butadiene Chemical compound ClC(Cl)=C(Cl)C(Cl)=C(Cl)Cl RWNKSTSCBHKHTB-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 229920006254 polymer film Polymers 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP38320/03 | 2003-02-17 | ||
JP38320/2003 | 2003-02-17 | ||
JP2003038320A JP2004247675A (ja) | 2003-02-17 | 2003-02-17 | 半導体装置の製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2007101427540A Division CN101179048A (zh) | 2003-02-17 | 2003-09-23 | 半导体装置的制造方法 |
CNA2007100040418A Division CN1992200A (zh) | 2003-02-17 | 2003-09-23 | 半导体装置的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1523656A true CN1523656A (zh) | 2004-08-25 |
CN100343975C CN100343975C (zh) | 2007-10-17 |
Family
ID=32767682
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2007100040418A Pending CN1992200A (zh) | 2003-02-17 | 2003-09-23 | 半导体装置的制造方法 |
CNB031249876A Expired - Fee Related CN100343975C (zh) | 2003-02-17 | 2003-09-23 | 半导体装置的制造方法 |
CNA2007101427540A Pending CN101179048A (zh) | 2003-02-17 | 2003-09-23 | 半导体装置的制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2007100040418A Pending CN1992200A (zh) | 2003-02-17 | 2003-09-23 | 半导体装置的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2007101427540A Pending CN101179048A (zh) | 2003-02-17 | 2003-09-23 | 半导体装置的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7098139B2 (zh) |
JP (1) | JP2004247675A (zh) |
KR (1) | KR100597155B1 (zh) |
CN (3) | CN1992200A (zh) |
DE (1) | DE10340848A1 (zh) |
TW (1) | TWI240366B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101286473B (zh) * | 2007-04-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
CN103377913A (zh) * | 2012-04-18 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | 开口的形成方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004247675A (ja) * | 2003-02-17 | 2004-09-02 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2005347511A (ja) * | 2004-06-03 | 2005-12-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7501350B2 (en) * | 2004-11-05 | 2009-03-10 | Tokyo Electron Limited | Plasma processing method |
JP4643975B2 (ja) * | 2004-11-26 | 2011-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2006165189A (ja) * | 2004-12-06 | 2006-06-22 | Nec Electronics Corp | 半導体装置の製造方法 |
US20060148243A1 (en) * | 2004-12-30 | 2006-07-06 | Jeng-Ho Wang | Method for fabricating a dual damascene and polymer removal |
DE102005004409B4 (de) * | 2005-01-31 | 2011-01-20 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Erhöhung der Prozessflexibilität während der Herstellung von Kontaktdurchführungen und Gräben in Zwischenschichtdielektrika mit kleinem ε |
JP2006286802A (ja) * | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | 埋込配線の形成方法 |
JP4159584B2 (ja) * | 2006-06-20 | 2008-10-01 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
JP4550786B2 (ja) | 2006-08-21 | 2010-09-22 | 株式会社東芝 | 半導体装置の製造方法 |
JP5465897B2 (ja) * | 2009-03-05 | 2014-04-09 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
JP2010056574A (ja) * | 2009-12-07 | 2010-03-11 | Nec Electronics Corp | 半導体装置の製造方法 |
US20150340611A1 (en) * | 2014-05-21 | 2015-11-26 | Sony Corporation | Method for a dry exhumation without oxidation of a cell and source line |
WO2021108294A2 (en) | 2019-11-27 | 2021-06-03 | Applied Materials, Inc. | Processing chamber with multiple plasma units |
CN115004329A (zh) * | 2019-11-27 | 2022-09-02 | 应用材料公司 | 用于选择性间隙填充的双等离子体预清洁 |
US20220336615A1 (en) * | 2021-04-16 | 2022-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing the same |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209356A (en) * | 1978-10-18 | 1980-06-24 | General Electric Company | Selective etching of polymeric materials embodying silicones via reactor plasmas |
US4588641A (en) * | 1983-11-22 | 1986-05-13 | Olin Corporation | Three-step plasma treatment of copper foils to enhance their laminate adhesion |
JP3185150B2 (ja) * | 1991-03-15 | 2001-07-09 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置の製造方法 |
JP3309717B2 (ja) | 1996-06-26 | 2002-07-29 | 三菱電機株式会社 | 集積回路の配線の製造方法 |
JP3150095B2 (ja) | 1996-12-12 | 2001-03-26 | 日本電気株式会社 | 多層配線構造の製造方法 |
TW394989B (en) | 1997-10-29 | 2000-06-21 | Matsushita Electronics Corp | Semiconductor device manufacturing and reaction room environment control method for dry etching device |
JP3380846B2 (ja) | 1997-11-05 | 2003-02-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6635185B2 (en) * | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
JP3501937B2 (ja) * | 1998-01-30 | 2004-03-02 | 富士通株式会社 | 半導体装置の製造方法 |
US5968847A (en) * | 1998-03-13 | 1999-10-19 | Applied Materials, Inc. | Process for copper etch back |
US6380096B2 (en) | 1998-07-09 | 2002-04-30 | Applied Materials, Inc. | In-situ integrated oxide etch process particularly useful for copper dual damascene |
US6974766B1 (en) | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
US6355571B1 (en) * | 1998-11-17 | 2002-03-12 | Applied Materials, Inc. | Method and apparatus for reducing copper oxidation and contamination in a semiconductor device |
US6162733A (en) * | 1999-01-15 | 2000-12-19 | Lucent Technologies Inc. | Method for removing contaminants from integrated circuits |
US6204192B1 (en) | 1999-03-29 | 2001-03-20 | Lsi Logic Corporation | Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures |
JP2001023985A (ja) * | 1999-07-08 | 2001-01-26 | Ebara Corp | 配線構造及びその製造方法 |
JP3783488B2 (ja) | 1999-10-18 | 2006-06-07 | ソニー株式会社 | 半導体装置の製造方法 |
US6323121B1 (en) * | 2000-05-12 | 2001-11-27 | Taiwan Semiconductor Manufacturing Company | Fully dry post-via-etch cleaning method for a damascene process |
CN1330395A (zh) * | 2000-06-27 | 2002-01-09 | 茂德科技股份有限公司 | 去除光致抗蚀剂后残留物质的清除方法 |
US6352921B1 (en) * | 2000-07-19 | 2002-03-05 | Chartered Semiconductor Manufacturing Ltd. | Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization |
TW523792B (en) * | 2000-09-07 | 2003-03-11 | Toshiba Corp | Semiconductor device and its manufacturing method |
US6967173B2 (en) * | 2000-11-15 | 2005-11-22 | Texas Instruments Incorporated | Hydrogen plasma photoresist strip and polymeric residue cleanup processs for low dielectric constant materials |
KR100617076B1 (ko) | 2000-12-29 | 2006-08-30 | 매그나칩 반도체 유한회사 | 듀얼 다마신 형성방법 |
US6554002B2 (en) | 2001-02-21 | 2003-04-29 | United Microelectronics Corp. | Method for removing etching residues |
US6787462B2 (en) * | 2001-03-28 | 2004-09-07 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device having buried metal wiring |
US6562416B2 (en) * | 2001-05-02 | 2003-05-13 | Advanced Micro Devices, Inc. | Method of forming low resistance vias |
KR100531419B1 (ko) | 2001-06-12 | 2005-11-28 | 주식회사 하이닉스반도체 | 반도체소자 및 그의 제조방법 |
JP2003023072A (ja) * | 2001-07-06 | 2003-01-24 | Hitachi Ltd | 半導体装置の製造方法および半導体装置の製造装置 |
JP2003109955A (ja) * | 2001-10-01 | 2003-04-11 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
US7067235B2 (en) * | 2002-01-15 | 2006-06-27 | Ming Huan Tsai | Bi-layer photoresist dry development and reactive ion etch method |
US20040018715A1 (en) * | 2002-07-25 | 2004-01-29 | Applied Materials, Inc. | Method of cleaning a surface of a material layer |
JP2004247675A (ja) * | 2003-02-17 | 2004-09-02 | Renesas Technology Corp | 半導体装置の製造方法 |
-
2003
- 2003-02-17 JP JP2003038320A patent/JP2004247675A/ja active Pending
- 2003-06-19 US US10/464,790 patent/US7098139B2/en not_active Expired - Lifetime
- 2003-08-05 TW TW092121363A patent/TWI240366B/zh not_active IP Right Cessation
- 2003-09-04 DE DE10340848A patent/DE10340848A1/de not_active Withdrawn
- 2003-09-23 KR KR1020030065936A patent/KR100597155B1/ko active IP Right Grant
- 2003-09-23 CN CNA2007100040418A patent/CN1992200A/zh active Pending
- 2003-09-23 CN CNB031249876A patent/CN100343975C/zh not_active Expired - Fee Related
- 2003-09-23 CN CNA2007101427540A patent/CN101179048A/zh active Pending
-
2006
- 2006-07-20 US US11/489,471 patent/US7462565B2/en not_active Expired - Lifetime
-
2008
- 2008-11-06 US US12/265,763 patent/US20090075479A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101286473B (zh) * | 2007-04-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
CN103377913A (zh) * | 2012-04-18 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | 开口的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200416945A (en) | 2004-09-01 |
JP2004247675A (ja) | 2004-09-02 |
KR100597155B1 (ko) | 2006-07-05 |
US7098139B2 (en) | 2006-08-29 |
CN101179048A (zh) | 2008-05-14 |
KR20040074899A (ko) | 2004-08-26 |
TWI240366B (en) | 2005-09-21 |
US20060258160A1 (en) | 2006-11-16 |
CN100343975C (zh) | 2007-10-17 |
DE10340848A1 (de) | 2004-08-26 |
US20090075479A1 (en) | 2009-03-19 |
US7462565B2 (en) | 2008-12-09 |
US20040161942A1 (en) | 2004-08-19 |
CN1992200A (zh) | 2007-07-04 |
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