CN1517735A - 照相机模件及其制造方法 - Google Patents

照相机模件及其制造方法 Download PDF

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CN1517735A
CN1517735A CNA2004100027123A CN200410002712A CN1517735A CN 1517735 A CN1517735 A CN 1517735A CN A2004100027123 A CNA2004100027123 A CN A2004100027123A CN 200410002712 A CN200410002712 A CN 200410002712A CN 1517735 A CN1517735 A CN 1517735A
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池田修
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Sanyo Electric Co Ltd
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/28Interference filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/55Optical parts specially adapted for electronic image sensors; Mounting thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof

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  • Optics & Photonics (AREA)
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Abstract

本发明公开了一种照相机模件及其制造方法。所要解决的技术问题为,把携带机器用的照相机模件小型化,同时降低制造成本。技术方案为,在图象传感器芯片(20)的表面上粘贴透镜(10),在透镜(10)的表面上覆盖由多层薄膜构成的滤光器构件(30)。滤光器构件(30)是从向透镜(10)入射的光中把规定波长区域的光遮断用的滤光器,例如遮断红外线用的IR滤光器。而且覆盖有滤光器构件(30)的透镜(10)上粘贴有由丙烯薄膜或聚烯烃薄膜等薄膜构成的光圈构件(31)。

Description

照相机模件及其制造方法
技术领域
本发明涉及照相机模件及其制造方法,特别是涉及适合向手机等携带机器进行内藏的小型照相机模件及其制造方法。
背景技术
近年来具有照相机功能的手机在普及。这种手机中内藏有小型的照相机模件。图11是表示这种照相机模件结构的剖面图。
图11中50是镜筒,51是组装在镜筒50内的透镜,52是设置在镜筒50镜筒口上的红外线遮断用IR滤光器。60是收容在镜筒50的空间内且与印刷基板70电连接的图象传感器芯片。
图象传感器芯片60把通过IR滤光器52和透镜51入射的来自被照体的光变换成电信号。该图象传感器芯片60在硅芯片61的表面上形成CCD,且支承硅芯片61用的支承用玻璃基板62贴合在其上。
图象传感器芯片60的表面周边形成有电极座63A、63B,从硅芯片61的侧面到背面形成有再配线64A、64B。
该再配线64A、64B延伸到贴合在硅芯片61背面上的玻璃基板65上,延伸到该玻璃基板65上的再配线64A、64B的端部形成有凸出电极66A、66B。该凸出电极66A、66B连接在印刷基板70上。
接受来自图象传感器芯片60的电信号并对该信号进行规定的图象信号处理的DSP80通过凸出电极81A、81B连接在印刷基板70的背面上。
这种照相机模件在专利文献1-3中被公开。背面设置有凸出电极的芯片结构在专利文献4中被公开。
专利文献1:特开平9-61239号公报
专利文献2:特开平11-261044号公报
专利文献3:特愿2001-128072号公报
专利文献4:专利公表2002-512436号公报
但上述的照相机模件中镜筒50、透镜51、IR滤光器52和图象传感器芯片60分别是个别的部件,把该个别部件组合进行组装照相机模件。因此在照相机模件的小型上有限度,同时有制造成本高的问题。
发明内容
本发明的照相机模件具有表面配置光电变换元件、背面配置外部连接用端子而构成的图象传感器芯片,该图象传感器芯片的表面粘贴有第一透镜,且在该第一透镜上粘贴有第二透镜。然后把所述图象传感器芯片和所述第一及第二透镜一体化。
附图说明
图1是本发明实施例照相机模件的平面图;
图2是沿图1X-X的剖面图;
图3是说明本发明实施例照相机模件制造方法的剖面图;
图4是说明本发明实施例照相机模件制造方法的剖面图;
图5是表示本发明实施例的滤光器构件特性的图;
图6是透镜阵列的平面图;
图7是透镜阵列的平面图;
图8是透镜阵列的平面图;
图9是说明本发明实施例照相机模件制造方法的剖面图;
图10是说明本发明实施例照相机模件制造方法的剖面图;
图11是现有例照相机模件的剖面图。
具体实施方式
下面边参照附图边详细说明本发明的实施例。
首先说明照相机模件的结构。图1是照相机模件的平面图,图2是沿图1X-X线的剖面图。
该照相机模件基本上是在图象传感器芯片20的表面上粘贴透镜10,并在透镜10的表面上覆盖由多层薄膜构成的滤光器构件30。滤光器构件30是从向透镜10入射的光中把规定波长区域的光遮断用的滤光器,例如遮断红外线用的IR滤光器。而且覆盖有滤光器构件30的透镜10上粘贴有由丙烯薄膜或聚烯烃薄膜等薄膜构成的光圈构件31。
透镜10由平面圆形的透镜本体11和为了支承该透镜本体11而设置在其周围并与透镜本体11一体成型的透镜支承框12构成。在此透镜本体11为了得到希望的光学特性、成型为具有规定的曲面。考虑透镜本体11的焦距,使其中心位置位于距图象传感器芯片20表面规定高度地进行透镜支承框12高度的设定。
滤光器构件30至少覆盖透镜本体11的话便可,但由于制造工序上的原因而覆盖透镜本体11和透镜支承框12这两者的表面。这点如后面所述,是由于采用在透镜阵列的整个面上蒸镀金属的制造方法的缘故。也可以是把滤光器构件30仅覆盖在透镜本体11上的结构。这种情况与把滤光器构件30构成在透镜本体11与透镜支承框12这两者(透镜的整个面)上相比能抑制在滤光器构件30上由热产生金属伸缩时透镜10发生的变形。即透镜支承框11部分能作为滤光器构件30的伸缩游隙部分利用。
而且图示的说明虽然省略了,但滤光器构件30也可在透镜10的下面(凸出电极一边的透镜本体11和透镜支承框12或仅透镜本体11)覆盖。这种情况在以后光圈构件31的安装时和以后的操作时,滤光器构件30的表面不露出,没有滤光器构件30表面受损伤的可能,操作性好。
光圈构件31粘贴在透镜支承框12上。
图象传感器芯片20中硅芯片21的表面上形成有光电变换元件CCD,其上用粘接剂等粘贴用于支承数百μm左右薄的硅芯片21的玻璃基板22。在硅芯片21的表面周边部形成有电极座23A、23B。这些电极座23A、23B与图象传感器芯片20的输出入电路连接。
电极座23A、23B的下面连接有贯通硅芯片21并达到图象传感器芯片20背面的再配线24A、24B,在其背面露出来的再配线24A、24B上形成有作为外部连接用端子的凸出电极25A、25B。
下面说明上述照相机模件的制造方法。如图3所示,通过晶片工艺制作由图象传感器芯片20成行列配置多个而构成的图象传感器晶片100。制作与图象传感器芯片20具有相当的形状·尺寸的多个透镜10一体化而构成的透镜阵列101。
在此图4是表示图3透镜阵列101的局部放大图。透镜阵列101把透镜本体11和透镜支承框12交替反复排列,把它们一体化。在透镜阵列101的整个表面上真空蒸镀有由多层薄膜构成的滤光器构件30。并制作成为晶片形状的光圈薄膜103。
在此如图5(a)所示,滤光器构件30由n层(n是2以上的自然数)的薄膜30-1、30-2、...30-n构成。来自被照体的入射光在薄膜交界面以规定的反射率被反射,透过的光向下层的薄膜入射并在下一个交界面被重复反射。其各薄膜的组成物质和厚度根据希望的滤光器特性选择,但厚度是约0.1μ左右。
图5(b)是表示各薄膜透过特性的概念图,例如表示薄膜30-1的透过率在波长f1极小。表示薄膜30-2的透过率在波长f2极小。表示薄膜30-3的透过率在波长f3极小。各薄膜的透过率根据其组成物质的种类和厚度变化。滤光器构件总合的透过率用各薄膜透过率的积表示。
这样则如图5(c)所示,能得到在规定的波长区域透过率几乎是零的滤光器特性。在此主要的薄膜组成物质包括铝、铂、金、铜、铬、镍这样的金属,硅和锗这样的半导体,五氧化钽、二氧化钛、一氧化硅、二氧化硅、二氧化锆、氧化铟、氧化铬、氧化铝、氧化铪这样的氧化物,或硫化锌、氟化镁这样的物质。
得到把所述透镜阵列101和光圈薄膜102粘贴在图象传感器晶片100上并一体化的结构体。
图6是表示透镜阵列101一例的平面图。如图6(a)所示,该透镜阵列101把多个透镜10列阵列、作为整体一体化成晶片形态。然后如图6(b)所示,该透镜阵列101被粘贴在图象传感器晶片100上。
图7是表示透镜阵列101其他例的平面图。如图7(a)所示,该透镜阵列101由呈现大致三角形状的二种分割阵列A、B构成。然后如图7(b)所示,分割阵列A、B的各自4个被粘贴在图象传感器晶片100上。
图8是表示透镜阵列101又其他例的平面图。如图8(a)所示,该透镜阵列101由四方形的一种分割阵列构成。然后如图8(b)所示,该16片分割阵列被粘贴在图象传感器晶片100上。该透镜阵列101从图象传感器晶片100露出的部分是浪费的,但其是由一种分割阵列构成,所以有其制作简单的优点。
图9是把透镜阵列101、光圈薄膜102粘贴在图象传感器晶片100上并一体化的结构体的剖面图。透镜阵列101的透镜支承框12跨越图象传感器芯片20与邻接的图象传感器芯片20的分界而配置,透镜支承框12的中心线配置成与所述分界大致一致。
在以上的粘贴工序之后则如图10所示,沿各图象传感器芯片20的分界把所述结构体通过切割刀或激光切断,分割成各个照相机模件200。这时透镜支承框12、光圈构件31也被分割成各自的约一半的宽度。
然后各个照相机模件200通过图象传感器芯片20背面的凸出电极25A、25B安装在印刷基板上。
在此向印刷基板安装时通常对凸出电极25A、25B进行加热处理,所以透镜10是塑料制的时,其耐热性成为问题。这时使用耐热性高的塑料材料或使用能低温连接的金凸出便可。
根据本发明,把图象传感器芯片与透镜一体化、在透镜表面上设置由多层薄膜构成的滤光器构件而构成照相机模件,所以能把照相机模件小型化,同时能大幅度降低制造成本。

Claims (9)

1、一种照相机模件,其特征在于,具备:图象传感器芯片,表面配置有光电变换元件、背面配置有外部连接用端子;透镜,在该图象传感器芯片的表面上至少粘贴一片;滤光器构件,由覆盖在所述透镜的表面上的多层薄膜构成。
2、如权利要求1所述的照相机模件,其特征在于,所述多层薄膜是金属的多层薄膜。
3、如权利要求1所述的照相机模件,其特征在于,所述透镜由透镜本体和支承该透镜本体的透镜支承框构成,至少该透镜本体的表面上覆盖所述滤光器。
4、如权利要求3所述的照相机模件,其特征在于,所述透镜支承框的表面上粘贴有光圈构件。
5、一种照相机模件的制造方法,其特征在于,准备:图象传感器晶片,由表面配置有光电变换元件、背面配置有外部连接用端子的图象传感器芯片配置多个而构成;透镜阵列,多个透镜一体化且各透镜的表面上覆盖由多层薄膜构成的滤光器构件,
把所述透镜阵列粘贴在所述图象传感器晶片的表面上,然后分割成所述图象传感器芯片与所述透镜一体化而形成的各个的照相机模件。
6、如权利要求5所述的照相机模件的制造方法,其特征在于,所述多层薄膜通过真空蒸镀法覆盖在所述各透镜的表面上。
7、如权利要求5或权利要求6所述的照相机模件的制造方法,其特征在于,所述透镜阵列成为晶片形态。
8、如权利要求5或权利要求6所述的照相机模件的制造方法,其特征在于,所述透镜阵列由分割阵列的集合体构成。
9、如权利要求5或权利要求6所述的照相机模件的制造方法,其特征在于,所述透镜阵列由四方形的分割阵列的集合体构成。
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CN100448014C (zh) * 2005-07-08 2008-12-31 采钰科技股份有限公司 影像感测芯片组
CN101872049A (zh) * 2009-04-27 2010-10-27 鸿富锦精密工业(深圳)有限公司 镜片结构及其制作方法
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