CN1510765A - Gallium nitride of group III-V compound semiconductor LED luminating device and manufacture thereof - Google Patents
Gallium nitride of group III-V compound semiconductor LED luminating device and manufacture thereof Download PDFInfo
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Abstract
A light-emitting unit made of GaN III-V compound semiconductor U9 and its making method, with the epitaxy growth way, grows a metal oxidation layer that has suitable thickness and good transmittance on the multiplayer epitaxy structure, as a light out-coupling layer, it has higher light out-coupling rate and thickening the film characteristic.
Description
Affiliated technical field:
The present invention relates to light-emitting device and the manufacture method thereof of a kind of gallium nitrate based III-V compound semiconductor LED, especially refer to a kind of light-emitting diode (light-emitting diode that is applicable to gallium nitrate based (GaN-based) III-V family material, be called for short LED) person, mainly be to go up the multilayer epitaxial structure (multi-layered epitaxialstructure) of growing up at a substrate (substrate), and with the mode of of heap of stone brilliant (epitaxial) grow up a suitable thickness and preferable metal oxide layer (the metal oxide layer of light transmission, ZnO for example) on the multilayer epitaxial structure, with as light removing layer (light extract ion layer), and constitute the light-emitting device person of a gallium nitride based LED, and has higher light extraction efficiency (light extraction efficiency) but and characteristic such as thick filmization.
Background technology:
Press, traditional gallium nitride base light emitting device, be with the Ni/Au structure as transparency electrode in the P type semiconductor laminar surface, and use the luminous efficiency of improving light-emitting device; Only, Ni/Au structure itself promptly has the comparatively not good material characteristic of light transmission, and therefore, on the architectural feature, the forming thickness of Ni/Au structure as thin as a wafer only can be between 0.005 to 0.2 μ m; Again, according to critical angle θ
C(CriticalAngle) principle, transparency electrode should preferably have suitable thickness (i.e. Shi Du thick filmization), can be beneficial to escaping of light and emit, and then the Ni/Au structure is under the restriction of thickness characteristics, and it is probably not desirable to the greatest extent yet for the gain of light transmission.
Moreover tradition is with the gallium nitride base light emitting device of Ni/Au structure as transparency electrode, because of aforesaid architectural feature makes so, be difficult on the forming thickness between 0.005 to 0.2 μ m, bestow surface treatment again and form more side, emit so can't further increase escaping of light, and shortcoming to some extent.
Summary of the invention:
Main purpose of the present invention, being provides a kind of " light-emitting device and the manufacture method thereof of gallium nitrate based III-V compound semiconductor LED ", mainly be in brilliant mode of heap of stone, the preferable metal oxide layer of a suitable thickness and the light transmission of growing up is on the multilayer epitaxial structure, with as the light removing layer, and because of the thick filmization of light removing layer, and can bestow surface treatment again, and further reach higher light extraction efficiency.
The technical solution used in the present invention is:
The method for producing light-emitting device of a kind of gallium nitrate based III-V compound semiconductor LED can comprise following step:
(a) step of growth n-GaN system brilliant sedimentary deposit of heap of stone on substrate utilizes sapphire (sapphire) or carborundum (SiC) as substrate, and after the upper surface of substrate forms a resilient coating, the of heap of stone brilliant sedimentary deposit of one deck n-GaN that grows up again system;
(b) step of growth one MQW active layer on the n-GaN layer, subsequent steps (a), the active layer of formation one MQW on the of heap of stone brilliant sedimentary deposit of n-GaN system;
(c) step of growth p-GaN system brilliant sedimentary deposit of heap of stone on active layer, subsequent steps (b), on the MQW active layer, form the of heap of stone brilliant sedimentary deposit of one deck p-GaN system (p-GaN-based), and with etching method partly the n-GaN laminar surface, partly the MQW active layer, and partly the p-GaN layer remove, make the n-GaN layer have the face of exposing;
(d) deposition ZnO of heap of stone brilliant is the step of Window layer on the p-GaN layer, and subsequent steps (c) can be on remaining p-GaN layer after the etching, is Window layer with the grow up ZnO of a suitable thickness of brilliant mode of heap of stone, and forms a preferable light removing layer;
Thus, can a n type metal electrode (n-type metalcontact) be set on the face in exposing of n-GaN layer, and a p type metal electrode (p-type metal contact) is set on the light removing layer, and constitute the light-emitting device of a gallium nitride based LED.
The light-emitting device of a kind of gallium nitrate based III-V compound semiconductor LED, comprise formations such as a substrate, a multilayer epitaxial structure, a smooth removing layer, a n type metal electrode and a p type metal electrode, this multilayer epitaxial structure comprises resilient coating, first semiconductor layer, light-generating layer again, reaches second semiconductor layer etc.; Wherein:
This substrate is to make with sapphire (sapphire) or carborundum (SiC);
This resilient coating lies in the resilient coating of the formed LT-GaN/HT-GaN of upper surface of substrate, and LT-GaN is the low temperature buffer layer on substrate of growing up earlier, and HT-GaN is the high temperature buffer layer on LT-GaN of growing up;
This first semiconductor layer is tied to form the n type GaN base III-V compound semiconductor layer of being longer than on the resilient coating;
This light-generating layer is tied to form the GaN base III-V compound semiconductor layer of being longer than on first semiconductor layer, or is called active layer, can be GaN multiple quantum well (MQW);
This second semiconductor layer is tied to form the p type GaN base III-V compound semiconductor layer of being longer than on the light-generating layer;
This light removing layer is tied to form the metal oxide layer of being longer than light-permeable on second semiconductor layer, can be the ZnO material;
This n type metal electrode is to be arranged on the exposing on the face of first semiconductor layer;
This p type metal electrode is to be arranged on the light removing layer; Thus, can constitute the light-emitting device of a gallium nitride based LED, and can via follow-up crystal grain processing, setting, wiring, and resin irritate the film encapsulation, and constitute the light-emitting diode of gallium nitrate based (GaN-based).
The beneficial effect that the present invention had is:
1, the present invention is because of being to grow up the preferable metal oxide layer of a suitable thickness and light transmission on the multilayer epitaxial structure in mode of heap of stone brilliant, with as the light removing layer, and constitutes a light-emitting device, thus can omit traditional Ni/Au structure, and have higher light extraction efficiency;
2, the present invention is because of no longer having traditional Ni/Au structure, thus this light removing layer can appropriateness thick filmization in addition, with the light extraction efficiency of further lifting light-emitting device;
3, the present invention,, emits and significantly promote escaping of light to form more side so can further bestow surface treatment on the light removing layer because of but light takes out the series of strata thick filmization;
4, active layer of the present invention is to can be GaN multiple quantum well (Multi-Quantum Well is called for short MQW) or InGaN multiple quantum well (MQW), or the single epitaxial layer of AlGaInN base III-V family;
5, ZnO, In
xZn
1-xO, Sn
xZn
1-xO, In
xSn
yZn
1-x-yMaterials such as O all can form metal oxide layer required for the present invention, and be applicable to smooth removing layer of the present invention;
6, refractive index is at the metal oxide layer more than 1.5, the metal oxide layer of conduction of n type or the conduction of p type, or be doped with the metal oxide layer of rare earth element, or have the metal oxide layer of preferable visible light light transmission scope (for example about 400 to 700nm), also applicable to smooth removing layer of the present invention.
Feature of the present invention, technological means, concrete function and specific embodiment, continue describe in detail with graphic, figure number as after.
Description of drawings:
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the step schematic diagram of the inventive method preferred embodiment;
Fig. 2 is the schematic perspective view of apparatus of the present invention preferred embodiment;
Fig. 3 is the structural representation of apparatus of the present invention preferred embodiment;
Fig. 4 can be with schematic diagram for ZnO and p-GaN's;
Fig. 5 emits schematic diagram for escaping of light in the light-emitting device;
Another step schematic diagram of Fig. 6 the inventive method preferred embodiment;
Fig. 7 to Fig. 8 is the surface treatment schematic diagram of light removing layer;
Fig. 9 emits schematic diagram for escaping of light in the embossing lines;
Figure 10 to Figure 11 is another embodiment schematic diagram of embossing lines;
Figure 12 is the step schematic diagram of the inventive method second embodiment;
Figure 13 is the structural representation of apparatus of the present invention second embodiment;
Figure 14 is another step schematic diagram of the inventive method second embodiment;
Figure 15 is the step schematic diagram of the inventive method the 3rd embodiment;
Figure 16 is the structural representation of apparatus of the present invention the 3rd embodiment;
Figure 17 is another step schematic diagram of the inventive method the 3rd embodiment;
Figure 18 is the step schematic diagram of the inventive method the 4th embodiment;
Figure 19 is the structural representation of apparatus of the present invention the 4th embodiment;
Figure 20 is another step schematic diagram of the inventive method the 4th embodiment.
Embodiment:
See also Fig. 1 to shown in Figure 3, in preferred embodiment, the present invention system utilizes the preferable ZnO material of light transmission, grows up the metal oxide layer of a suitable thickness on the multilayer epitaxial structure in brilliant mode of heap of stone, and forms a preferable light removing layer; Wherein, to shown in Figure 2, the inventive method system can comprise following step as Fig. 1:
Step 4 is the step of " deposition ZnO of heap of stone brilliant is a Window layer on the p-GaN layer ", and subsequent steps 3 can be on remaining p-GaN layer 25 after the etching, is Window layer 31 with the grow up ZnO of a suitable thickness of brilliant mode of heap of stone, and forms a preferable light removing layer;
Thus, can a n type metal electrode 40 be set on the face 21a, and be that a p type metal electrode 50 is set on the Window layer 31, and constitute the light-emitting device person of a LED at ZnO in exposing of n-GaN layer 21.
Intend proposing the expositor around here, it is to be: metal oxide layer of the present invention, system can be formed by sputter self (self-texturing by sputtering) method, or can be formed by physical vapour deposition (PVD) (physical vapor deposition) method, or can be formed by ion plating (ionplating) method, or can be formed by pulsed laser evaporation (pulsed laser evaporation) method, or can be formed by chemical vapour deposition (CVD) (chemical vapor deposition) method, or (the molecular beam epitaxy) method of can being grown up by molecular beam epitaxy is formed.
Intending giving proposing the expositor around here, is to be again: aforesaid light-emitting device, via can being arranged on after the crystal grain processing on the foot rest (figure does not show), and can irritate the film encapsulation by resin after the wiring, and promptly can be made into a complete LED.
As shown in Figure 3, the structure of light-emitting device of the present invention, comprise formations such as a substrate 10, a multilayer epitaxial structure 20, one smooth removing layer 30, a n type metal electrode 40 and a p type metal electrode 50, this multilayer epitaxial structure 20 comprises resilient coating 22, first semiconductor layer 24, light-generating layer 26 again, reaches second semiconductor layer 28 etc.; Wherein:
This substrate 10 is to make with sapphire (sapphire) or carborundum (SiC), and substrate thickness can be at 300 to 450 μ m;
This resilient coating 22, lie in the resilient coating of the upper surface 11 formed LT-GaN/HT-GaN of substrate 10, LT-GaN is the low temperature buffer layer of elder generation's growth on substrate 10, and thickness can be at 30 to 500 , HT-GaN is the high temperature buffer layer of growth on LT-GaN, and thickness can be at 0.5 to 6 μ m;
This first semiconductor layer 24, be tied to form the n type GaN base III-V compound semiconductor layer of being longer than on the resilient coating 22 (n-type gallium nitride-based III-V group compoundsemiconductor), thickness can be at 2 to 6 μ m, and growth temperature T g is between 980 to 1080 ℃;
This light-generating layer 26, be tied to form the GaN base III-V compound semiconductor layer of being longer than on first semiconductor layer 24 (gallium nitride-based III-V group compound semiconductor), or be called active layer, can be GaN multiple quantum well (Multi-Quantum Well is called for short MQW) or InGaN multiple quantum well (MQW);
This second semiconductor layer 28, be tied to form the p type GaN base III-V compound semiconductor layer of being longer than on the light-generating layer 26 (p-type gallium nitride-based III-V group compoundsemi conductor), for example: the of heap of stone brilliant deposit thickness of p-GaN, p-InGaN, p-Al InGaN can be at 0.2 to 0.5 μ m, and growth temperature T g is between 950 to 1000 ℃;
This light removing layer 30 is tied to form the metal oxide layer (light-transmitting oxide-metallic material) of being longer than light-permeable on second semiconductor layer 28, can be the ZnO material;
This n type metal electrode 40 is to be arranged on the exposing on the face 24a of first semiconductor layer 24;
This p type metal electrode 50 is to be arranged on the light removing layer 30;
Thus, can constitute a light-emitting device with light removing layer 30, and the suitable thickness that light removing layer 30 is had, can make that (active region) light that is distributed is easier to penetrate the side and the surface of light removing layer 30 from the active region, and the amount of escaping of increase light (emitted light), to promote the light extraction efficiency of light-emitting device.
Should give the expositor more around here, be to be:
This light-generating layer 26 (being active layer), also can only comprise an epitaxial layer (epitaxial layer), and this epitaxial layer is made of AlGaInN base III-V compound semiconductor layer (aluminum-gallium-indium-nitride-based III-V group compoundsemi conductor);
This light removing layer 30 further also can be by In
xZn
1-xO is a material or with Sn
xZn
1-xO is a material or with In
xSn
yZn
1-x-yO is the metal oxide layer person that material constituted;
This light removing layer 30 also can be refractive index (refractive index) at least 1.5 metal oxide layer person;
This light removing layer 30 also can be the metal oxide layer person that n type conduction (n-type conduction) or p type conduct (p-type conduction);
This light removing layer 30 also can be the metal oxide layer person who is doped with rare earth element (rare earth-doped);
This light removing layer 30 can be the metal oxide layer person with preferable visible light light transmission scope (transparency invisible range), for example: scope about 400 to 700nm; The above is all the feasible mode of apparatus of the present invention.
See also shown in Figure 4ly, because the energy gap B1 (Bandgap energy) of ZnO is about 3.4eV, that is Eg (ZnO) 3.4eV, and the energy gap B2 of p-GaN is also about 3.4eV, that is Eg (p-GaN) 3.4eV; Therefore, both energy gap side-play amount B3 (Bandgap energy offset) are less, have preferable lattice match, and it is feasible to make that on the p-GaN layer brilliant deposition ZnO of heap of stone is that Window layer becomes, and grow into the light removing layer of a suitable thickness; Generally speaking, lattice constant a 3.1 89 of GaN, lattice constant a 3.24 of ZnO, and lattice constant a 4.758 of sapphire (sapphire) (1 0 =1nm, 1000nm=1 μ m).
See also shown in Figure 5 since the light-emitting device of LED in, only at critical angle θ
C(Critical Angle) just can escape with interior light and emit, so, have the light removing layer of suitable thickness, can promote the light extraction efficiency of light-emitting device; As shown in the figure, the light removing layer 30 of apparatus of the present invention, thickness have 1 μ m at least, and therefore, the light that distributes from the active region is easier to penetrate the surface 301 and the side 302 of light removing layer 30, and has preferable light extraction efficiency.
See also shown in Figure 6ly, because smooth removing layer 30 of the present invention, the scope that thickness is implemented can be at 50 to 50 μ m, so but thick filmization; If the thickness of this light removing layer 30 is at least at 1 μ m, then the inventive method further can comprise step 5, the i.e. step of " is to bestow surface treatment on the transparency conducting layer at ZnO ", system is with the exposed surface (being that light removing layer 30 surfaces do not contain the part that contacts with p type metal electrode 50) of light removing layer 30, further give roughening, make light removing layer 30 have more side, emit significantly to increase escaping of light.
See also Fig. 7 to shown in Figure 8, brought forward is described, and the surface of this light removing layer 30 further also can be bestowed embossing and handle, and be formed the embossing lines, and similarly, this embossing lines also can make light removing layer 30 have more side, emits and significantly increase escaping of light; Shown in the 7th figure, this embossing lines 303 can be cone or triangle cone person; As shown in Figure 8, this embossing lines 305 can be quadrangular pyramid body (pyramid body) etc.; And the variation person of other how much cones also is the feasible pattern of embossing lines of the present invention.
See also shown in Figure 9, this light removing layer 30 surperficial formed embossing lines 303,305 or rough surface (Rough Surface), can by a generalized section further specify in the embossing lines 303,305 or in the rough surface light escape the situation of emitting; That is, on light removing layer 30 surfaces, some light can't be escaped and emitted by horizontal surface reflection originally, now as shown in the figure, some light can be emitted and arrive to escape eventually by most secondary reflections between dual-side 302.
Seeing also Figure 10 to shown in Figure 11, is another embodiment floor map and the part schematic perspective view of embossing lines; Wherein, this embossing lines, further also can be laid and be formed by most grooves 307, and that the laying mode of groove 307 can be arranged is triangular in shape, rectangle, rhombus, and polygon etc., 307 of grooves also have the appropriate intervals distance, for current lead-through, and the permutations person of other geometry also is the feasible mode of the present invention.
See also Figure 12 to shown in Figure 13, in a second embodiment, the present invention utilizes the In with light transmission
xZn
1-xThe O material is grown up the metal oxide layer of a suitable thickness on the multilayer epitaxial structure in mode of heap of stone brilliant, and is formed a smooth removing layer; The method step of present embodiment is roughly identical with preferred embodiment person, and only step 4 changes step 4a into, wherein:
This step 4a is " brilliant deposition In of heap of stone on the p-GaN layer
xZn
1-xO is a Window layer " step, subsequent steps 3 can be on remaining p-GaN layer 25 after the etching, with the grow up In of a suitable thickness of brilliant mode of heap of stone
xZn
1-xO is a Window layer 32, and forms a smooth removing layer; This is another feasible pattern of the inventive method.
See also shown in Figure 14ly, in a second embodiment, the inventive method further can comprise step 5a, promptly " at In
xZn
1-xBestow surface treatment on the O system layer " step, be with In
xZn
1-xO is the exposed surface (being that light removing layer 30 surfaces do not contain the part that contacts with p type metal electrode 50) of Window layer 32, further gives roughening, makes formed smooth removing layer can have more side, emits significantly to increase escaping of light.
See also Figure 15 to shown in Figure 16, in the 3rd embodiment, the present invention utilizes the Sn with light transmission
xZn
1-xThe O material is grown up the metal oxide layer of a suitable thickness on the multilayer epitaxial structure in mode of heap of stone brilliant, and is formed a smooth removing layer; The method step of present embodiment is roughly identical with preferred embodiment person, and only step 4 changes step 4b into, wherein:
This step 4b is " brilliant deposition Sn of heap of stone on the p-GaN layer
xZn
1-xO is a Window layer " step, subsequent steps 3 can be on remaining p-GaN layer 25 after the etching, with the grow up Sn of a suitable thickness of brilliant mode of heap of stone
xZn
1-xO is a Window layer 33, and forms a smooth removing layer; This is another feasible pattern of the inventive method.
See also shown in Figure 17ly, in the 3rd embodiment, the inventive method further can comprise step 5b, promptly " at Sn
xZn
1-xBestow surface treatment on the O system layer " step, be with Sn
xZn
1-xO is the exposed surface (being that light removing layer 30 surfaces do not contain the part that contacts with p type metal electrode 50) of Window layer 33, further gives roughening, makes formed smooth removing layer can have more side, emits significantly to increase escaping of light.
See also Figure 18 to shown in Figure 19, in the 4th embodiment, the present invention utilizes the In with light transmission
xSn
YZn
1-x-YThe O material is grown up the metal oxide layer of a suitable thickness on the multilayer epitaxial structure in mode of heap of stone brilliant, and is formed a smooth removing layer; The method step of present embodiment is roughly identical with preferred embodiment person, and only step 4 changes step 4C into, wherein:
This step 4C is " brilliant deposition In of heap of stone on the p-GaN layer
xSn
YZn
1-x-YO is a Window layer " step, subsequent steps 3 can be on remaining p-GaN layer 25 after the etching, with the grow up In of a suitable thickness of brilliant mode of heap of stone
xSn
yZn
1-x-YO is a Window layer 34, and forms a smooth removing layer; This is another feasible pattern of the inventive method.
See also shown in Figure 20ly, in the 4th embodiment, the inventive method further can comprise step 5C, promptly " at In
xSn
yZn
1-x-YBestow surface treatment on the O system layer " step, be with In
xSn
yZn
1-x-YO is Window layer 34 exposed surfaces (being that light removing layer 30 surfaces do not contain the part that contacts with p type metal electrode 50), further gives roughening, makes formed smooth removing layer can have more side, emits significantly to increase escaping of light.
Claims (18)
1. one kind " method for producing light-emitting device of gallium nitrate based III-V compound semiconductor LED " is to comprise following step:
(a) step of growth n-GaN system brilliant sedimentary deposit of heap of stone on substrate utilizes sapphire (sapphire) or carborundum (SiC) as substrate, and after the upper surface of substrate forms a resilient coating, the of heap of stone brilliant sedimentary deposit of one deck n-GaN that grows up again system;
(b) step of growth one MQW active layer on the n-GaN layer, subsequent steps (a), the active layer of formation one MQW on the of heap of stone brilliant sedimentary deposit of n-GaN system;
(c) step of growth p-GaN system brilliant sedimentary deposit of heap of stone on active layer, subsequent steps (b), on the MQW active layer, form the of heap of stone brilliant sedimentary deposit of one deck p-GaN system (p-GaN-based), and with etching method partly the n-GaN laminar surface, partly the MQW active layer, and partly the p-GaN layer remove, make the n-GaN layer have the face of exposing;
(d) deposition ZnO of heap of stone brilliant is the step of Window layer on the p-GaN layer, and subsequent steps (c) can be on remaining p-GaN layer after the etching, is Window layer with the grow up ZnO of a suitable thickness of brilliant mode of heap of stone, and forms a preferable light removing layer;
Thus, can a n type metal electrode be set on the face in exposing of n-GaN layer, and a p type metal electrode is set on the light removing layer, and constitute the light-emitting device of a LED.
2. the method for producing light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 1 is characterized in that: this step (d) can be: brilliant deposition In of heap of stone on the p-GaN layer
xZn
1-xO is the step of Window layer, that is subsequent steps (c), can be on remaining p-GaN layer after the etching, and with the grow up In of a suitable thickness of brilliant mode of heap of stone
xZn
1-xO is a Window layer, and forms a preferable light removing layer.
3. the method for producing light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 1 is characterized in that: this step (d) can be: brilliant deposition Sn of heap of stone on the p-GaN layer
xZn
1-xO is the step of Window layer, that is subsequent steps (c), can be on remaining p-GaN layer after the etching, and with the grow up Sn of a suitable thickness of brilliant mode of heap of stone
xZn
1-xO is a Window layer, and forms a preferable light removing layer.
4. the method for producing light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 1 is characterized in that: this step (d) can be: brilliant deposition In of heap of stone on the p-GaN layer
xSn
yZn
1-x-yO is the step of Window layer, that is subsequent steps (c), can be on remaining p-GaN layer after the etching, and with the grow up In of a suitable thickness of brilliant mode of heap of stone
xSn
yZn
1-x-yO is a Window layer, and forms a preferable light removing layer.
5. the method for producing light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 1 is characterized in that: the thickness of this light removing layer can be 50 to 50 μ m.
6. the method for producing light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 1, it is characterized in that: if the thickness of this light removing layer is at least when 1 μ m, subsequent steps (d) then, this method can comprise further that step (e) bestows the surface-treated step on the light removing layer, also be about to the surface of light removing layer, further give roughening or embossing and handle, increase escaping of light to form more side and emit.
7. the light-emitting device of a gallium nitrate based III-V compound semiconductor LED, comprise formations such as a substrate, a multilayer epitaxial structure, a smooth removing layer, a n type metal electrode and a p type metal electrode, this multilayer epitaxial structure comprises resilient coating, first semiconductor layer, light-generating layer again, reaches second semiconductor layer etc.; It is characterized in that:
This substrate is to make with sapphire (sapphire) or carborundum (SiC), and the upper surface of the substrate resilient coating of can growing up;
This first semiconductor layer is tied to form the n type GaN base III-V compound semiconductor layer of being longer than on the resilient coating;
This light-generating layer is tied to form the GaN base III-V compound semiconductor layer of being longer than on first semiconductor layer, or is called active layer, can be GaN multiple quantum well (MQW);
This second semiconductor layer is tied to form the p type GaN base III-V compound semiconductor layer of being longer than on the light-generating layer;
This light removing layer is tied to form the metal oxide layer of being longer than light-permeable on second semiconductor layer;
This n type metal electrode is to be arranged on the exposing on the face of first semiconductor layer;
This p type metal electrode is to be arranged on the light removing layer; Thus, can constitute the light-emitting device of a gallium nitride based LED, and can via follow-up crystal grain processing, setting, wiring, and resin irritate the film encapsulation, and constitute a gallium nitride based LED.
8. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7 is characterized in that:
The thickness of this substrate can be at 300 to 450 μ m;
This resilient coating, lie in the resilient coating of the formed LT-GaN/HT-GaN of upper surface of substrate, LT-GaN is the low temperature buffer layer of elder generation's growth on substrate, the thickness of LT-GaN can be at 30 to 500 , HT-GaN is the high temperature buffer layer of growth on LT-GaN, and the thickness of HT-GaN can be at 0.5 to 6 μ m;
The thickness of this first semiconductor layer can be at 2 to 6 μ m;
This second semiconductor layer can be the of heap of stone brilliant sedimentary deposit of p-GaN, p-InGaN, p-AlInGaN, and thickness can be at 0.2 to 0.5 μ m.
9. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7 is characterized in that: this light-generating layer can be InGaN multiple quantum well (MQW).
10. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7, it is characterized in that: this light-generating layer, further also can only comprise an epitaxial layer, and this epitaxial layer, constituted by AlGaInN base III-V compound semiconductor layer.
11. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7 is characterized in that: this light removing layer can be ZnO, In
xZn
1-xO, Sn
xZn
1-xO, In
xSn
yZn
1-x-yThe metal oxide layers that material constituted such as O, and 0≤X≤1, and 0≤Y≤1, and 0≤X+Y≤1.
12. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7 is characterized in that: this light removing layer can be refractive index at least at 1.5 metal oxide layer; Or can be the metal oxide layer that is doped with rare earth element; Or can be metal oxide layer with preferable visible light light transmission scope (between 400 to 700nm).
13. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7 is characterized in that: this light removing layer is the metal oxide layer person who can be conduction of n type or the conduction of p type.
14. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7 is characterized in that: the thickness of this light removing layer can be 50 to 50 μ m.
15. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7, it is characterized in that: when the thickness of this light removing layer during at least at 1 μ m, the surface of this light removing layer, can be a matsurface, or have the embossing lines, increase escaping of light to form more side and emit.
16. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 15, it is characterized in that: this embossing lines can be made of cone, or can be made of the triangle cone, or can be constituted, or can be by arbitrary how much cone institute constitutors by the quadrangular pyramid body.
17. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 15, it is characterized in that: this embossing lines, system can be laid by most grooves and be formed, and the laying mode of groove can be arranged triangular in shape, maybe can arrange rectangularly, maybe can arrange and assumes diamond in shape, maybe can arrange and be polygon, maybe can arrange and be arbitrary geometry, and between groove and have the appropriate intervals distance, for current lead-through.
18. the light-emitting device of gallium nitrate based III-V compound semiconductor LED according to claim 7, it is characterized in that: this metal oxide layer, system can be formed by sputter self (self-texturingby sputtering) method, or can be formed by physical vapour deposition (PVD) (physical vapor deposition) method, or can be formed by ion plating (ion plating) method, or can be formed by pulsed laser evaporation (pulsed laser evaporation) method, or can be formed by chemical vapour deposition (CVD) (chemical vapor deposition) method, or (molecularbeam epitaxy) method of can being grown up by molecular beam epitaxy is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021593248A CN1510765A (en) | 2002-12-26 | 2002-12-26 | Gallium nitride of group III-V compound semiconductor LED luminating device and manufacture thereof |
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