CN1480735A - Circuit for detecting low power of supplied voltage - Google Patents
Circuit for detecting low power of supplied voltage Download PDFInfo
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- CN1480735A CN1480735A CNA021322341A CN02132234A CN1480735A CN 1480735 A CN1480735 A CN 1480735A CN A021322341 A CNA021322341 A CN A021322341A CN 02132234 A CN02132234 A CN 02132234A CN 1480735 A CN1480735 A CN 1480735A
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Abstract
A device for detecting low voltage connected to a power source of low voltage possesses a circuit, which provides a first Not-Ready signal when voltage value input from the power source is lower than predetermined critical value of low voltage. The Not-Ready signal prevents non-volatile memory from erasing and programming operations. The device is capable of detecting change of voltage within 0.3 voltages in accuracy without influence caused by differences in mfg. condition and temp.
Description
Technical field
The present invention is relevant for a kind of device for detecting voltage, particularly relevant for a kind of auto levelizer that can not be subjected to itself because of operating temperature or the difference of manufacture process causes the variation for the limit voltage value to influence, therefore have the device for detecting voltage of burning voltage detecting operation.
Background technology
Flash memory (Flash EPROM) has very important role in non-volatile storage integrated circuit.These flash memories have the ability that can electrically wipe (Electrically Erasing), sequencing (Programming) or reading cells (Memory Cell) in chip.Because these flash memories can be by bestowing voltage in these devices, whereby with sequencing or wipe its stored data, therefore, the system that adds flash memory then must provide these flash memories supply voltages (Vcc) and sequencing voltage (Vpp).For gradually adopting low-voltage as for the system of operating voltage at present, fortunately, most flash memory all can be designed in low-voltage (about 1.8 volts) can successfully finish the operation of sequencing under high voltage (about 12 volts) voltage source.
Yet, still have any must be noted that, when computer system when for example the PDA(Personal Digital Assistant) system uses flash memory as its storing media, can descend along with the voltage of battery and may have influence on the operation of whole device.And which kind of situation can take place? at this moment, control signal and the sequencing in system or the operating process of electrically wiping can't guarantee effectively, and these devices may can also be used, but sequencing of being carried out or the operation of wiping may be wrong.In some cases, the operation that there is no need might thereby produce, and these will and then dwindle the life-span of chip.
Therefore the supply voltage detection circuit also is designed the variation as monitoring voltage, in case when the voltage of battery be lower than one be scheduled to scope the time, these circuit will produce a ready signal (Not-Ready Signals) not, with reporting system as in response to certificate.Circuit diagram for example shown in Figure 1, the operating voltage Vcc of supply non-volatility memorizer storage unit 12 also is couple to a low-voltage arrangement for detecting 14 except being couple to this non-volatility memorizer storage unit 12.When the operating voltage of being supplied during less than a low voltage value, then this low-voltage arrangement for detecting 14 will be exported a low-voltage detection signal (Low Voltage Detector Signal, LVcc) value of the operating voltage of being supplied with representative is less than safety value.But most circuit for detecting has supply voltage and is about 3.3 volts.But for the circuit for detecting (for example 1.8 volts) of low-voltage, the amplitude that voltage reduces will make the quite difficult design of these circuit for detecting, in addition, the shared area of the consumption of reduction power and chip also is the factor that increases this circuit for detecting overall complexity.
Fig. 2 shows the circuit block diagram of traditional power detecting device 200.The resistance R 1 of serial is connected in series between power supply voltage VDD and earthing potential with R2.And a resistance R 3 and a nmos pass transistor M1 also are connected between power supply voltage VDD and the earthing potential.And the grid of this nmos pass transistor M1 is connected to the node N1 between resistance R 1 and R2, and a capacitor C1 one end is connected between this node N1 and the earthing potential simultaneously.A PMOS transistor M3 connected in series and nmos pass transistor M2 are connected between this power supply voltage VDD and the earthing potential, wherein, another source/drain electrode of PMOS transistor M3 then is connected to this power supply voltage VDD, and another source/drain electrode of nmos pass transistor M2 then is connected to earthing potential.The grid of PMOS transistor M3 and nmos pass transistor M2 then is connected to node N2, and this node N2 is between resistance R 3 and nmos pass transistor M1.In addition, a capacitor C2 also is connected between node N2 and the power supply voltage VDD.
CMOS transistor M4 has the structure identical with M3 with transistor M2 with M5.The grid of transistor M4 and M5 is connected to the node N3 between transistor M2 and M3.And the grid between transistor M4 and the M5 is connected to earthing potential through a capacitor C3.And the node that node N4 transistor M4 is connected with M5.Input end and the output terminal of this CMOS transistor M2 and M3 are respectively node N2 and N3.And the input end of CMOS transistor M4 and M5 and output terminal are respectively node N3 and N4.
When power is supplied voltage VDD from earthing potential (Ground, under guide number D) current potential position standard when rising to a predetermined voltage level, then will export a high voltage pulse to represent low-voltage detection signal (Low Voltage Detector Signal) LVCC.This function can be connected to the capacitor C1 and the C3 of ground voltage position standard by an end, and the capacitor C2 that an end is connected to power supply voltage VDD finishes.When the power of being supplied is the current potential of power supply voltage VDD, these capacitors C1, C2 and C3 then will can not be recharged, and therefore, node N1, N2 will have identical voltage level with N3, as power supply voltage VDD or earthing potential GND.And node N4 at first can become noble potential, and capacitor C1, C2, will charge in regular turn with C3, and will be VX=VDD*R2/ (R1+R2), ground voltage and power supply voltage VDD at the voltage level of node N1, N2 and N3, therefore, the output of node 4 will become low-voltage position standard.
As described above, when VX voltage was higher than the limit voltage (Thresholdvoltage) of transistor M1, transistor node N4 can become low-voltage position standard.When VX voltage was lower than the limit voltage (Threshold voltage) of transistor M1, transistor node N4 can become high voltage level.Therefore, this circuit can be detected power supply voltage VDD and be higher than or be lower than VTH1* (R1+R2)/R2, the limit voltage of VTH1 transistor M1.If grid width/length of adjusting the value of resistance R 1 and R2 and transistor M1 then can be adjusted the voltage range of detecting than (Width/Length).
Generally speaking, this circuit can be informed low battery voltages position standard, and and then stops any operation before the accurate breaking-up in this low battery voltages position total system.But, if this circuit when the system of high speed operation, will make the scope of whole operation voltage thereby being rather narrow of change.Because the voltage that traditional circuit for detecting as shown in Figure 2 can be detected is decided by the limit voltage value of transistor M1.So, will make this circuit have sizable manufacturing to change difference (ManufacturingVariation), and the Temperature Influence factor.In addition, (R1+R2)/slope of R2 will make whole worse off cake.Because above-mentioned Consideration can know that the maximal value of the voltage that can detect and minimum value may have a strong impact on the performance and the applicability of circuit greater than 0.5 volt.
Details are as follows for the reason that above-mentioned situation can take place.The PSPICE of circuit simulation software in Fig. 2
TMIts operation of emulation.At first, hypothesis is during emulation earlier, and temperature is fixed, and therefore only needs to consider the influence that difference caused of manufacture process.Because the difference value that the limit voltage of transistor M1 has in the manufacturing is made an appointment with ± 0.1 to ± 0.2 volt, (supposing that the value of resistance R 1 equals the value of resistance R 2), the voltage level of detecting will be twice in the difference value of manufacture process.As shown in Figure 3, power supply voltage VDD is a direct current rising voltage, and the voltage level of node N1 will follow power supply voltage VDD to change linearly, and the output of the circuit for detecting of Fig. 2 just of the voltage level of node N4.Maintain under the same resistance value condition in resistance R 1, the resistance of resistance R 2 reduce will this emulation lines more flat (Flatter), therefore, will have sizable detecting voltage level difference.With parameter k value representative (R1+R2)/R2, then equal one when the threshold value difference for k value at this, during just minimum k value, detecting voltage level difference will be k times.
Influence in order to explain that temperature dependency causes please refer to Fig. 4.For nmos pass transistor and the transistorized traditional mode of PMOS, it has dependence on temperature pact-2mV/ ℃, the similar content of having explained, the difference of threshold value will be by parameter k value size influence detecting voltage level difference, and the k value is greater than one value, therefore, this difference will cause as the result as the amplifier.
Consider difference and two factors of dependence on temperature in the manufacturing, can not design a low-voltage arrangement for detecting, its voltage level difference of detecting will be lower than 0.5 volt.
Though very good (approximately greater than the 3V) that traditional device for detecting voltage can operate when high voltage, difference and the maximal value of the reconnaissance range that dependence causes on the temperature and the intensity of variation between the minimum value made yet it needs to reduce inevitably.
By the conventional voltage arrangement for detecting of above-mentioned Fig. 2 as can be known, reduce variable quantity, for example 0.4 volt, as if unlikely reach to being lower than a very little voltage variety.Therefore, can't reach higher detecting degree of accuracy.
Summary of the invention
Purpose of the present invention provides a kind of device for detecting voltage, the variation of the accuracy monitoring supply voltage that it can be higher.In addition, more can reduce because the difference on the manufacture craft or the variation cause of operating temperature for the influence of device for detecting voltage.
In order to reach above-mentioned purpose, the invention provides a kind of circuit for detecting low power of supplied voltage, in order to receive a supply voltage, comprise a comparative voltage generator, a reference voltage generator and a difference amplifier.Above-mentioned comparative voltage generator produces and exports a comparative voltage according to supply voltage.Reference voltage generator produces a reference voltage according to supply voltage in order to linear dependence relation.The difference amplifier is couple to comparative voltage generator and reference voltage generator, in order to receive comparative voltage and reference voltage and to export a low-voltage detection signal, wherein when reference voltage during greater than comparative voltage, the low-voltage detection signal will be one first voltage level, be lower than a predetermined detection threshold in order to expression supply voltage, when reference voltage during less than comparative voltage, the low-voltage detection signal will be one second voltage level, be higher than predetermined detection threshold in order to expression supply voltage.
Above-mentioned circuit for detecting low power of supplied voltage, wherein the comparative voltage generator is according to when supply voltage increases, and comparative voltage also increases simultaneously, but when this supply voltage surpassed a scheduled voltage, comparative voltage will convergence one fixed voltage value.
Above-mentioned circuit for detecting low power of supplied voltage, wherein the comparative voltage generator comprises a bleeder circuit, wherein bleeder circuit is divided into two groups of voltages of dividing potential drop supply according to this, wherein first group comprises that one first resistance forms, second group comprises that one second resistance and a transistor form, wherein when supply voltage increases, comparative voltage is two to form a team to supply second group of partial pressure value in the voltage dividing potential drop, but after this transistorized limit voltage value in supply voltage surpasses second group, comparative voltage will convergence limit voltage value.
Above-mentioned circuit for detecting low power of supplied voltage, wherein reference voltage generator is according to the value of supply voltage, output reference voltage linearly, wherein when supply voltage reduces, reference voltage also reduces linearly, and when supply voltage increased, reference voltage also increased linearly.And this reference voltage generator is made after the dividing potential drop output reference voltage value linearly to supply voltage through a bleeder circuit, and wherein bleeder circuit is divided into two groups of voltages of dividing potential drop supply according to this.First group comprises that a transistor forms, and second group comprises that a resistance forms, and reference voltage is second group dividing potential drop.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, elaborate.
Description of drawings
Fig. 1 illustrates a kind of traditional device for detecting voltage calcspar;
Conventional voltage arrangement for detecting detailed circuit diagram in Fig. 2 key diagram 1;
The circuit simulation result of the conventional voltage arrangement for detecting in Fig. 3 key diagram 2;
Conventional voltage arrangement for detecting in Fig. 4 key diagram 2, the circuit simulation result of the variation gained of consideration operating temperature;
Fig. 5 illustrates a kind of device for detecting voltage detailed circuit diagram;
The calcspar of the device for detecting voltage in Fig. 6 key diagram 5;
The node N1 of the device for detecting voltage in Fig. 7 key diagram 5 and the change in voltage figure of N2;
Another change in voltage figure of the node N1 of the device for detecting voltage in Fig. 8 key diagram 5 and N2;
Fig. 9 illustrates the detailed circuit diagram of the device for detecting voltage of a preferred embodiment of the present invention;
The reference voltage level that Figure 10 is desirable is with the comparison diagram of the actual reference voltage value that device for detecting voltage produced of Fig. 9 preferred embodiment according to the present invention.
The figure number explanation
12: the non-volatility memorizer storage unit
14: low-voltage arrangement for detecting 200: the power detecting device
R1, R2, R3: resistance
M1, M2, MVT, M12:NMOS transistor
M3, MPL, M11:PMOS transistor
N1, N2, N3, N4: node C1, C2: capacitor
M4, M5:CMOS transistor R3: resistance
MVT:NMOS transistor N2: node
500: output voltage circuit for detecting 940: phase inverter
510,610,910: the comparative voltage generator
520,620,920: the difference amplifier
530,630,930: reference voltage generator
Embodiment
Please refer to Fig. 5, be a kind of voltage detection circuit.And its circuit block diagram, then content as shown in Figure 6.At first, with reference to the voltage detection circuit 600 of Fig. 6, be a difference amplifier (Different Amplifier) 620 at center section, and left-hand component is a comparative voltage generator 610 earlier, the right is a reference voltage generator 630.Comparative voltage generator 610 is exported a comparative voltage (Comparative Voltage) respectively with reference voltage generator 630 and is given difference amplifier 620 with a reference voltage (Reference Voltage).And this difference amplifier 620 has goodish function, can be when being higher than reference voltage in the position of comparative voltage accurate (Comparative Voltage Potential), will export a high-voltage value near power supply voltage vdd voltage position standard, and on the contrary, if when the position standard of comparative voltage is lower than reference voltage, will export a low voltage value.
And its detail circuits figure please refer to Fig. 5, and is described below.In Fig. 5, a circuit that is connected in series with nmos pass transistor MVT by resistance R 3 is connected between power supply voltage VDD and the earthing potential, and wherein an end of resistance R 3 is connected to power supply voltage VDD, and one source of nmos pass transistor MVT/drain electrode end is ground connection then.The grid of nmos pass transistor MVT and the source/drain electrode end that is connected with resistance R 3 then are connected to node N2 simultaneously.These devices are then formed a comparative voltage generator 510, as the comparative voltage generator 610 shown in Fig. 6, so that produce the position standard of comparative voltage.
Difference amplifier 620 among Fig. 6 is then identical with the difference amplifier 520 shown in Fig. 5, and M1 is formed to M5 by transistor.The similar nmos pass transistor of transistor M1 and M2 just have identical grid width/length than (Gate Width/Gate Lengthratio), and its source electrode links together.The grid of transistor M1 is connected to the node N2 in comparative voltage generator 510, and the grid of transistor M2 is connected to the node N1 of reference voltage generator 530, and this is as the reference voltage generator shown in Fig. 6 630.The drain electrode of transistor M1 is connected to grid and the drain electrode of PMOS transistor M3, just the node N3 in the icon.The similar PMOS transistor of transistor M3 and M4 just have identical grid width/length than (Gate Width/Gate Length ratio), and its source electrode links together (node N3), and its source electrode is then received power supply voltage VDD equally.The drain electrode of transistor M2 and M4 then is connected to node N4, and this node N4 is the output of output voltage circuit for detecting 500.
Reference voltage generator 530 is made up of with R2 two resistance R 1, and the resistance R 1 of this serial connection and R2 are connected between power supply voltage VDD and the earthing potential.And resistance R 1 and R2 tie point node N1, this node N1 is as the input end of 530 pairs of difference amplifiers 520 of this reference voltage generator.
Details are as follows for the method for operating of these circuit.Entire circuit described in Fig. 5 is in order to the circuit as low power detection.Reference voltage generator 530 uses very simple circuit design, can obtain easily at the voltage level of node N1, i.e. VN1=R2/ (R1+R2) * VDD.In the same manner, in comparative voltage generator 5 10, the voltage level of node N2 can obtain according to beneath formula:
VN2=RMVT/ (RMVT+R3) is as VN2＜VTH;
VN2=VTH is as VN2＞=VTH
Represent the limit voltage of nmos pass transistor MVT at this VTH, RMVT then represents the resistance value of nmos pass transistor MVT.When considering the voltage level of node N1 and N2, just when VN1 and VN2, because these two magnitudes of voltage have different change in voltage, so, can at certain the confluce be arranged a bit as shown in Figure 7.Therefore, the detecting voltage level of power supply voltage VDD is for when node N1 equates with the voltage level of N2, just during VN1=VN2.
Because the limit voltage of nmos pass transistor MVT can because the difference of making have an appointment ± 0.1 to ± 0.2 volt variation, or for dependence on temperature pact-2mV/ ℃, therefore, when the temperature of operation during from-45 ℃ to 95 ℃, what the difference of maximum limit voltage value and minimum limit voltage value will be very is big.Also because identical as mentioned above reason, though the voltage of node N1 can be followed the value of power supply voltage VDD linearly, yet, threshold value changes the variation that will have influence on the voltage level of detecting by the sizes values of a parameter k because getting difference, this parameter k is greater than one value, therefore, the result that exports of the circuit of low power detection will be that this difference changing value gets value of magnification.
Though very good (approximately greater than the 3V) that traditional device for detecting voltage can operate when high voltage, difference and the maximal value of the reconnaissance range that dependence causes on the temperature and the intensity of variation between the minimum value made yet it needs to reduce inevitably.
In Fig. 5, the position of comparative voltage (VN2) is accurate to be produced by comparative voltage generator 510, and the main threshold value by transistor MVT of its value is determined.And reference voltage (VN1) is produced by reference voltage generator 530.If 510 comparative voltage VN2 that can produce of comparative voltage generator can be as the desirable comparative voltage VN2 value of generation shown in Figure 8, then voltage detection circuit 500 since the difference of making and the detecting error situations that difference caused of operating temperature will very significantly reduce.Therefore, this problem is looked closely the desirable comparative voltage VN2 value that how to produce as shown in Figure 8.
The voltage detection circuit of a preferred embodiment provided by the present invention, the voltage detection circuit detailed circuit diagram of an embodiment as shown in Figure 9 can have the function of quite exporting near this desirable comparative voltage.In Fig. 9, be included in center section one difference amplifier (DifferentAmplifier) 920, and left-hand component is a comparative voltage generator 910, the right is a reference voltage generator 930.Comparative voltage generator 910 is exported a comparative voltage (Comparative Voltage) respectively with reference voltage generator 930 and is given difference amplifier 920 with a reference voltage (Reference Voltage).The output of difference amplifier 920 is then through a phase inverter (Inverter) 940 output one low-voltage detection signals (Low Voltage Detector Signal, beneath abbreviation LVCC).When if this LVCC signal is logic low potential at the current potential of node N4, then export value, if when the current potential of node N4 is logic high potential, then export zero potential near power supply voltage VDD.Whether above-mentioned LVCC voltage level is lower than a predetermined detecting voltage level in order to represent power supply voltage VDD, if be lower than this detecting voltage level, then the LVCC voltage level will be noble potential, if be higher than this detecting voltage level, then the LVCC voltage level will be electronegative potential.
Above-mentioned comparative voltage generator 910 can partly be connected in series institute by two dividing potential drops to be formed, and utilizes this dividing potential drop partly to export comparative voltage.And the dividing potential drop of this first part can be made up of a for example resistance R 2, and the dividing potential drop of this second portion can be made up of with the circuit that resistance R 1 is connected in series a for example nmos pass transistor MVT.Therefore, as shown in the figure, resistance R 2, nmos pass transistor MVT and resistance R 1 are serially connected between power supply voltage VDD and the earthing potential, wherein an end of resistance R 3 is connected to power supply voltage VDD, one source of nmos pass transistor MVT/drain electrode end is then received resistance R 1, and by the other end ground connection of resistance R 1.The grid of nmos pass transistor MVT and the source/drain electrode end that is connected with resistance R 3 then are connected to node N2 simultaneously.These devices are then formed a comparative voltage generator 910, so that produce the position standard of comparative voltage.
And the difference amplifier 920 shown in Fig. 9 is made up of to M5 transistor M1.The similar nmos pass transistor of transistor M1 and M2 just have identical grid width/length than (Gate Width/Gate Length ratio), and its source electrode links together.The grid of transistor M1 is connected to the node N2 in comparative voltage generator 910, and the grid of transistor M2 is connected to the node N1 of reference voltage generator 930.The drain electrode of transistor M1 is connected to grid and the drain electrode of PMOS transistor M3, just the node N3 in the icon.The similar PMOS transistor of transistor M3 and M4 just have identical grid width/length than (Gate Width/Gate Length ratio), and its source electrode links together (node N3), and its source electrode is then received power supply voltage VDD equally.The drain electrode of transistor M2 and M4 then is connected to node N4.
First of this two dividing potential drops part partly for example is made up of a PMOS transistor MPL, and the grounded-grid of this PMOS transistor MPL makes this transistor remain on the state of unlatching (TurnON).Second dividing potential drop part then can be made up of a for example resistance R 2, and certainly, the present invention also is not limited in resistance or transistor with fixed resistance value and forms, and also can get variable resistor and is formed by adjusting resistance, and this decides according to the needs on designing.The PMOS transistor MPL of this serial connection and resistance R L are connected between power supply voltage VDD and the earthing potential.And PMOS transistor MPL and resistance R L tie point node N1, this node N1 is as the input end of 930 pairs of difference amplifiers 920 of this reference voltage generator.Grid width/grid length by adjusting PMOS transistor MPL is than (Ratio of Gate Width/GateLength), i.e. the reference voltage exported of may command reference voltage generator 930.
And the embodiment circuit diagram of Fig. 9 is very approaching with the described voltage detection circuit of Fig. 5, except the difference of part is arranged.These differences comprise that at first, a PMOS transistor MPL replaces the resistance R 1 in the reference voltage generator 530 shown in Fig. 5, secondly is that capacitor CCPA1 and CCAP2 are added in this circuit.Wherein capacitor CCPA1 comprises an end ground connection, and an other end is then received node N1, so that the reference voltage that stable reference voltage generator 930 is exported.And capacitor CCPA2 comprises an end ground connection, and an other end is then received the source terminal (node N2) of transistor MVT, so that the comparative voltage that stabilization ratio is exported than voltage generator 910.In Fig. 9, a PMOS transistor MPL and a resistance R L are serially connected, and an end is connected to power supply voltage VDD, and an other end is ground connection then.When the voltage level of power supply voltage VDD was higher than the limit voltage value of transistor MPL, transistor MPL will close, and the voltage level of node N1 will drop to ground connection position standard soon.
Please refer to Figure 10, desirable reference voltage level is with the comparison diagram of the actual reference voltage value that device for detecting voltage produced of Fig. 9 preferred embodiment according to the present invention.It show to use a PMOS transistor MPL so that to replace original resistance will be very actual and its special effect is arranged.
As explained above, at the magnitude of voltage VN1 of node N1 and N2 and the point of crossing of VN2 is a very important point, from then on more than, when power supply voltage VDD increases, VN2 will be greater than VN1, so the low-voltage detection signal (LVCC) that the device for detecting voltage of Fig. 9 preferred embodiment is exported will be exported a value near zero potential.And if from then on, then when power supply voltage VDD reduced, VN1 will be greater than VN2, therefore, LVCC will export a high-voltage value near power supply voltage VDD.Therefore, suitable important of the power of supplying in this point of crossing.Generally speaking, if the specification requirement of circuit design is detected point at for example 1.2 volts, but allow that changing value is from 1.1 volts to 1.3 volts.Therefore, having two purposes to reach, at first, how to control this detecting point, secondly is how to control difference to meet the requirement of this specification.
With this specification is example, and this requirement will be easy to reach.At device for detecting voltage as the preferred embodiment among Fig. 9, have two kinds of selections can change the detecting point, first selection is kept all parameters and is not changed in this circuit, unique change be the resistance value of resistance R 1.After adding resistance value that resistance R 1 is started from scratch, the voltage level VN2 of node N2 will rise, and then influences the position and the last influence detecting point of point of crossing.All parameters that second selection promptly maintains in this circuit are all constant, except grid width/grid length of PMOS transistor MPL than (Ratio of Gate Width/Gate Length).Grid width/grid length of adjusting transistor MPL is than the electric current that can change transistor MPL, and thereby influences voltage level at node N1.Because the point of the point of crossing most critical of VN1 and VN2, this grid width/grid length of adjusting transistor MPL is than reaching the purpose of adjusting control detecting point.
About second above-mentioned selection, in order to reach the detecting point control in a scope of being scheduled to, be example as 0.3 volt above-mentioned specification, will be not easy very much.From the desirable reference voltage position quasi wave shape shown in Fig. 8 as can be known, the manufacture craft difference of comparative voltage generator and dependence on temperature will can not influence the difference of detecting.And in the device for detecting voltage of the preferred embodiment in Fig. 9 as can be known, if the value of resistance R 1 is fixed, the voltage VN1 of node N1 will fix, therefore, unique in this circuit can an influence detecting point difference factor then be transistor MPL.Though transistor MPL itself also has difference and dependence on temperature on the manufacture craft, if select the resistance value of resistance R L carefully, the influence that its characteristic will make dependence on temperature cause becomes relatively very little.And this design will make the mobility scale of detecting point can be controlled in the above-mentioned preset range, and need not consider manufacture craft difference and variation of temperature.
Though the present invention with a preferred embodiment openly as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (9)
1, a kind of circuit for detecting low power of supplied voltage in order to receive a supply voltage, is characterized in that: comprise
One comparative voltage generator produces and exports a comparative voltage according to this supply voltage;
One reference voltage generator produces a reference voltage according to this supply voltage in order to concern according to a linear dependence;
One difference amplifier is couple to this comparative voltage generator and this reference voltage generator, in order to receiving this comparative voltage and this reference voltage and to export a low-voltage detection signal,
When this reference voltage during greater than this comparative voltage, this low-voltage detection signal will be one first voltage level, be lower than a predetermined detection threshold in order to represent this supply voltage,
When this reference voltage during less than this comparative voltage, this low-voltage detection signal will be one second voltage level, be higher than this predetermined detection threshold in order to represent this supply voltage.
2, circuit for detecting low power of supplied voltage as claimed in claim 1, it is characterized in that: this comparative voltage generator is according to when this supply voltage increases, this comparative voltage also increases simultaneously, but when this supply voltage surpassed a scheduled voltage, this comparative voltage will convergence one fixed voltage value.
3, circuit for detecting low power of supplied voltage as claimed in claim 2, it is characterized in that: this comparative voltage generator comprises a bleeder circuit, wherein this bleeder circuit is divided into two groups of these supply voltages of dividing potential drop according to this, wherein this first group comprises that one first resistance forms, this second group comprises that one second resistance and a transistor form, wherein
When this supply voltage increased, this comparative voltage was this two this second group of partial pressure value of forming a team to supply in the voltage dividing potential drop,
But after this transistorized limit voltage value in this supply voltage surpasses this second group, this comparative voltage will this limit voltage value of convergence.
4, circuit for detecting low power of supplied voltage as claimed in claim 1, it is characterized in that: this reference voltage generator is according to the value of this supply voltage, export this reference voltage linearly, wherein when this supply voltage reduces, this reference voltage also reduces linearly, when this supply voltage increased, this reference voltage also increased linearly.
5, circuit for detecting low power of supplied voltage as claimed in claim 4, it is characterized in that: this reference voltage generator is done to export this reference voltage level linearly after the dividing potential drop through a bleeder circuit to this supply voltage, wherein this bleeder circuit is divided into two groups of these supply voltages of dividing potential drop according to this, wherein this first group comprises that a transistor forms, this second group comprises that a resistance forms, and this reference voltage is this dividing potential drop of second group.
6, circuit for detecting low power of supplied voltage as claimed in claim 5, it is characterized in that: this reference voltage can be according to this transistorized one grid width in this first group/grid length than adjusting size, adjusts this transistorized limit voltage value according to this and control the voltage level of this low-voltage detection signal.
7, circuit for detecting low power of supplied voltage as claimed in claim 1 is characterized in that: the output terminal at this comparative voltage generator also comprises a capacitor, keeps the current potential of this comparative voltage.
8, circuit for detecting low power of supplied voltage as claimed in claim 1 is characterized in that: the output terminal at this reference voltage generator also comprises a capacitor, keeps the current potential of this reference voltage.
9, circuit for detecting low power of supplied voltage as claimed in claim 1 is characterized in that: also comprise an anti-phase device, receive the output of this difference amplifier, and should export and export this low-voltage detection signal according to this after anti-phase.
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| CN02132234.1A CN1235054C (en) | 2002-09-03 | 2002-09-03 | Circuit for detecting low power of supplied voltage |
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| CN02132234.1A CN1235054C (en) | 2002-09-03 | 2002-09-03 | Circuit for detecting low power of supplied voltage |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102103888A (en) * | 2009-12-18 | 2011-06-22 | Nxp股份有限公司 | Voltage control circuit for phase change memory |
| CN102279609A (en) * | 2010-06-09 | 2011-12-14 | 上海宏力半导体制造有限公司 | Voltage regulator and reference voltage generating circuit thereof |
| CN102279303A (en) * | 2010-06-09 | 2011-12-14 | 上海宏力半导体制造有限公司 | Voltage detection circuit |
| CN102809964A (en) * | 2011-06-01 | 2012-12-05 | 株式会社东芝 | Voltage detection circuit, ECU, automobile with ECU |
| CN109256158A (en) * | 2018-08-16 | 2019-01-22 | 歌尔股份有限公司 | sensing circuit |
-
2002
- 2002-09-03 CN CN02132234.1A patent/CN1235054C/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102103888A (en) * | 2009-12-18 | 2011-06-22 | Nxp股份有限公司 | Voltage control circuit for phase change memory |
| CN102103888B (en) * | 2009-12-18 | 2014-05-28 | Nxp股份有限公司 | Voltage control circuit for phase change memory |
| CN102279609A (en) * | 2010-06-09 | 2011-12-14 | 上海宏力半导体制造有限公司 | Voltage regulator and reference voltage generating circuit thereof |
| CN102279303A (en) * | 2010-06-09 | 2011-12-14 | 上海宏力半导体制造有限公司 | Voltage detection circuit |
| CN102279609B (en) * | 2010-06-09 | 2014-09-10 | 上海华虹宏力半导体制造有限公司 | Voltage regulator and reference voltage generating circuit thereof |
| CN102809964A (en) * | 2011-06-01 | 2012-12-05 | 株式会社东芝 | Voltage detection circuit, ECU, automobile with ECU |
| CN102809964B (en) * | 2011-06-01 | 2015-05-06 | 株式会社东芝 | Voltage detection circuit, ECU, automobile with ECU |
| US9075087B2 (en) | 2011-06-01 | 2015-07-07 | Kabushiki Kaisha Toshiba | Voltage detection circuit, ECU, automobile with ECU |
| CN109256158A (en) * | 2018-08-16 | 2019-01-22 | 歌尔股份有限公司 | sensing circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1235054C (en) | 2006-01-04 |
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