CN1471146A - Method for manufacturnig silicon high-speed semiconductor switch device - Google Patents
Method for manufacturnig silicon high-speed semiconductor switch device Download PDFInfo
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- CN1471146A CN1471146A CNA031450296A CN03145029A CN1471146A CN 1471146 A CN1471146 A CN 1471146A CN A031450296 A CNA031450296 A CN A031450296A CN 03145029 A CN03145029 A CN 03145029A CN 1471146 A CN1471146 A CN 1471146A
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 03145029 CN1258210C (en) | 2003-06-18 | 2003-06-18 | Method for manufacturnig silicon high-speed semiconductor switch device |
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CN 03145029 CN1258210C (en) | 2003-06-18 | 2003-06-18 | Method for manufacturnig silicon high-speed semiconductor switch device |
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CN1471146A true CN1471146A (en) | 2004-01-28 |
CN1258210C CN1258210C (en) | 2006-05-31 |
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CN 03145029 Expired - Fee Related CN1258210C (en) | 2003-06-18 | 2003-06-18 | Method for manufacturnig silicon high-speed semiconductor switch device |
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Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100358113C (en) * | 2004-11-12 | 2007-12-26 | 敦南科技股份有限公司 | Semiconductor dopping process |
CN100459151C (en) * | 2007-01-26 | 2009-02-04 | 北京工业大学 | Insulation bar dual-pole transistor with the internal transparent collector |
CN101866854A (en) * | 2010-05-11 | 2010-10-20 | 襄樊三瑞达电力半导体有限公司 | Production method of ultrafast soft recovery diode chip |
CN101305470B (en) * | 2005-11-14 | 2010-12-08 | 富士电机***株式会社 | Semiconductor device and method for manufacturing same |
CN102082080A (en) * | 2010-11-19 | 2011-06-01 | 南京大学 | Electron radiation processing method for chips of semiconductor element |
CN102637727A (en) * | 2012-05-03 | 2012-08-15 | 杭州士兰集成电路有限公司 | Diode for improving recovery softness characteristic and manufacture method of diode |
CN103050545A (en) * | 2011-10-14 | 2013-04-17 | 上海韦尔半导体股份有限公司 | TVS (Transient Voltage Suppressor) diode and manufacturing method thereof |
CN104157569A (en) * | 2014-08-26 | 2014-11-19 | 清华大学 | Technology for manufacturing fast recovery diode |
CN105405759A (en) * | 2015-12-18 | 2016-03-16 | 江苏宏微科技股份有限公司 | Fast recovery diode preparation method by controlling recovery characteristics through hydrogen injection process |
CN101861651B (en) * | 2007-11-14 | 2016-06-01 | Abb技术有限公司 | Reverse-conducting insulated gate bipolar transistor and corresponding manufacture method |
CN106611797A (en) * | 2015-10-23 | 2017-05-03 | 国网智能电网研究院 | Power device with local metal service life control and manufacturing method thereof |
CN106898548A (en) * | 2015-12-21 | 2017-06-27 | 北京大学 | A kind of method that metallic atom diffusion in silicon is encouraged under room temperature environment |
CN107452623A (en) * | 2016-05-31 | 2017-12-08 | 北大方正集团有限公司 | The manufacture method and fast recovery diode of a kind of fast recovery diode |
CN109659236A (en) * | 2018-12-17 | 2019-04-19 | 吉林华微电子股份有限公司 | Reduce the process and its VDMOS semiconductor devices of VDMOS recovery time |
CN109671625A (en) * | 2017-10-13 | 2019-04-23 | 华润微电子(重庆)有限公司 | The preparation method of fast recovery diode |
CN110660847A (en) * | 2018-06-28 | 2020-01-07 | 上海先进半导体制造股份有限公司 | Bipolar transistor and method for manufacturing the same |
CN112002761A (en) * | 2020-09-07 | 2020-11-27 | 深圳市美浦森半导体有限公司 | Manufacturing method of DMOS device integrated with FRD and DMOS device |
-
2003
- 2003-06-18 CN CN 03145029 patent/CN1258210C/en not_active Expired - Fee Related
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100358113C (en) * | 2004-11-12 | 2007-12-26 | 敦南科技股份有限公司 | Semiconductor dopping process |
CN101305470B (en) * | 2005-11-14 | 2010-12-08 | 富士电机***株式会社 | Semiconductor device and method for manufacturing same |
CN100459151C (en) * | 2007-01-26 | 2009-02-04 | 北京工业大学 | Insulation bar dual-pole transistor with the internal transparent collector |
CN101861651B (en) * | 2007-11-14 | 2016-06-01 | Abb技术有限公司 | Reverse-conducting insulated gate bipolar transistor and corresponding manufacture method |
CN101866854A (en) * | 2010-05-11 | 2010-10-20 | 襄樊三瑞达电力半导体有限公司 | Production method of ultrafast soft recovery diode chip |
CN102082080A (en) * | 2010-11-19 | 2011-06-01 | 南京大学 | Electron radiation processing method for chips of semiconductor element |
CN102082080B (en) * | 2010-11-19 | 2012-05-02 | 南京大学 | Electron radiation processing method for chips of semiconductor element |
CN103050545A (en) * | 2011-10-14 | 2013-04-17 | 上海韦尔半导体股份有限公司 | TVS (Transient Voltage Suppressor) diode and manufacturing method thereof |
CN102637727A (en) * | 2012-05-03 | 2012-08-15 | 杭州士兰集成电路有限公司 | Diode for improving recovery softness characteristic and manufacture method of diode |
CN102637727B (en) * | 2012-05-03 | 2016-01-20 | 杭州士兰集成电路有限公司 | A kind of diode and manufacture method thereof improving recovery softness characteristic |
CN104157569A (en) * | 2014-08-26 | 2014-11-19 | 清华大学 | Technology for manufacturing fast recovery diode |
CN104157569B (en) * | 2014-08-26 | 2017-06-30 | 清华大学 | Fast recovery diode method of manufacturing technology |
CN106611797A (en) * | 2015-10-23 | 2017-05-03 | 国网智能电网研究院 | Power device with local metal service life control and manufacturing method thereof |
CN105405759A (en) * | 2015-12-18 | 2016-03-16 | 江苏宏微科技股份有限公司 | Fast recovery diode preparation method by controlling recovery characteristics through hydrogen injection process |
CN106898548A (en) * | 2015-12-21 | 2017-06-27 | 北京大学 | A kind of method that metallic atom diffusion in silicon is encouraged under room temperature environment |
CN107452623A (en) * | 2016-05-31 | 2017-12-08 | 北大方正集团有限公司 | The manufacture method and fast recovery diode of a kind of fast recovery diode |
CN107452623B (en) * | 2016-05-31 | 2020-02-21 | 北大方正集团有限公司 | Manufacturing method of fast recovery diode and fast recovery diode |
CN109671625A (en) * | 2017-10-13 | 2019-04-23 | 华润微电子(重庆)有限公司 | The preparation method of fast recovery diode |
CN110660847A (en) * | 2018-06-28 | 2020-01-07 | 上海先进半导体制造股份有限公司 | Bipolar transistor and method for manufacturing the same |
CN110660847B (en) * | 2018-06-28 | 2022-04-12 | 上海先进半导体制造有限公司 | Bipolar transistor and method for manufacturing the same |
CN109659236A (en) * | 2018-12-17 | 2019-04-19 | 吉林华微电子股份有限公司 | Reduce the process and its VDMOS semiconductor devices of VDMOS recovery time |
CN109659236B (en) * | 2018-12-17 | 2022-08-09 | 吉林华微电子股份有限公司 | Process method for reducing VDMOS recovery time and VDMOS semiconductor device thereof |
CN112002761A (en) * | 2020-09-07 | 2020-11-27 | 深圳市美浦森半导体有限公司 | Manufacturing method of DMOS device integrated with FRD and DMOS device |
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CN1258210C (en) | 2006-05-31 |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Ketong Electronic Relay General Plant Beijing Assignor: Beijing University of Technology Contract fulfillment period: 2007.1.16 to 2012.1.15 contract change Contract record no.: 2008990001422 Denomination of invention: Method for manufacturnig silicon high-speed semiconductor switch device Granted publication date: 20060531 License type: Exclusive license Record date: 20081211 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2007.1.16 TO 2012.1.15; CHANGE OF CONTRACT Name of requester: BEIJING CITY KETONG ELECTRONIC RELAY GENERAL FACTO Effective date: 20081211 |
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