CN1466860A - Method and apparatus for generating X-ray or EUV radiation - Google Patents
Method and apparatus for generating X-ray or EUV radiation Download PDFInfo
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- CN1466860A CN1466860A CNA018163963A CN01816396A CN1466860A CN 1466860 A CN1466860 A CN 1466860A CN A018163963 A CNA018163963 A CN A018163963A CN 01816396 A CN01816396 A CN 01816396A CN 1466860 A CN1466860 A CN 1466860A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
- H01J35/112—Non-rotating anodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/08—Targets (anodes) and X-ray converters
- H01J2235/081—Target material
- H01J2235/082—Fluids, e.g. liquids, gases
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
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- Optics & Photonics (AREA)
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- Analysing Materials By The Use Of Radiation (AREA)
Abstract
In a method and an apparatus for generating X-ray or EUV radiation, an electron beam is brought to interact with a propagating target jet, typically in a vacuum chamber. The target jet is formed by urging a liquid substance under pressure through an outlet opening. Hard X-ray radiation may be generated by converting the electron-beam energy to Bremsstrahlung and characteristic line emission, essentially without heating the jet to a plasma-forming temperature. Soft X-ray or EUV radiation may be generated by the electron beam heating the jet to a plasma-forming temperature.
Description
Technical field
The present invention relates generally to a kind of generation X-light or far ultraviolet (EUV) radiation, particularly relate to high brightness X-light or far ultraviolet (EUV) method of radiating and device.The radiation that is produced for example can be used for medical diagnosis, no damage test, lithography, microscopy, material science, or in the application of some other X-light or EUV.
Background technology
The X-light source applications of high power and brightness is in many fields, as medical diagnosis, no damage test, crystal structure analysis, surface physics, lithography, X-light fluorescence and microscopy.
In some applications, X-only is used to make the not inside imaging of the object of saturating visible light, for example in the medical diagnosis and the examination of materials, has just utilized the X-light radiation of 10-1000keV, promptly hard X-light radiation.Conventional hard X-light source, one of them electron beam is accelerated delivers to a solid anodes, produces the X-light radiation of relative low-light level.In hard X-light imaging, the resolution of the video that obtains depends on the distance of X-light source and the size of light source basically.Time for exposure is depended on the distance of X-light source and the power of light source.In fact, this makes the imaging of X-light become resolution and a kind of balance between the time for exposure.This difficult problem is to obtain big as far as possible X-luminous power from as far as possible little light source always, promptly obtains high brightness.In conventional solid target source, X-light both had been continuous bremstrahlen to be launched, and is characteristic curve again and launches and launch, and wherein depends on used target material than radiation feature.The energy that is not transformed into the X-light radiation mainly as heat deposition in solid target.Limiting that conventional X-light pipe launches the power of X-light radiation thereby also limit the primary factor that conventional X-light pipe launches the brightness of X-light radiation is the anode heating.More particularly, beam power must be limited in the scope that anode material is not melted.In order to increase this power limit, several different schemes have been proposed.A kind of such scheme comprises makes anode cooling and rotation, as see " imaging system of medical diagnosis) " (" Imaging Systems for Medical Diagnostics ", E.Krestel, SiemensAktiengesellschaft, Berlin and Munich, 1990) the 3rd Zhanghe the 7th chapter.Though the rotarting anode of cooling can be kept a kind of higher beam power, its brightness still is subjected to the restriction of electron beam focus locality heating.The average power load also is restricted, because used target material of the same race in each week rotation.In general, the X-light source that is used for medical diagnosis that intensity is very high is at 100kw/mm
2Following work, and the low-power microfocus device of the state of the art is at 150kw/mm
2Following work.
Application in soft X-light and EUV wavelength zone (tens eV are to several keV) comprises as lithography of future generation and X-light microscopic system.Since generation nineteen sixty, the size that constitutes the structure on integrated circuit basis is constantly reducing.The benefit of bringing thus is faster, the more complicated circuit that needs smaller power.Now, photolithography has been used for the integrated circuit that the suitability for industrialized production line width is about 0.13 μ m.This technology expectation is still applicable to 0.1-0.07 μ m.In order further to reduce line width, other method may be necessary, wherein EUV projection lithography art is a strong candidate, as see " international semiconductor technology path figure " (" International Technology Roadmap for Semiconductors ", International SEMATECH, Austin TX, 1999).In EUV projection lithography art, a kind of EUV goal systems that reduces has been used, and its wave-length coverage is about 10-20nm.
In soft X-light and EUV district, conventional produce hard X-light radiation and compare with above-mentioned, adopt a kind of different schemes that produces radiation usually because in solid target electron beam energy to be transformed into the efficient of soft X-light radiation generally too low, be difficult to utilize.But, a kind of common technique that produces soft X-light and EUV radiation is based on and uses strong (about 10
10-10
13W/cm
3) laser emission heating target material, produce a kind of heat and close plasma, as see " soft X-light and far ultraviolet radiation: principle and application " (" Soft X-rays and ExtremeUltraviolet Radiation:principles and application ", D.T.Attwoodge UniversityPress, 1999) the 6th chapter in.These so-called laser produce plasma (LPP) and had both launched continuous radiation, and the line of emission characteristic emission is again wherein depended on target material and plasma temperature than radiation feature.The X-light source of traditional LPP uses the solid target material, can be subjected to the injury of unwanted chip emission, also has repetition rate and the uninterrupted restriction of using because target material be supplied in a limiting factor.This has caused reproducibility low-debris target to comprise that gas blowing is (as seeing US-A-5577 092, with Kubiak et al., no chip EUVL source [Debris-free EUVL sources based on gas jets] based on gas blowing, carry OSA Trends in Optics and Photonics, No.4, p.66,1996) and fluid spray (as seeing US-A-6 002 744, with Malmqvist et al., produce the fluid sputtering target [Liquid-jet target for laser-plama soft x-ray generation] of the soft X-light of laser-plasma, Review of ScientificInstruments, No.67, p.4150, exploitation 1996).These targets have been widely used in the light source of soft X-light of LPP or EUV.But, the LPP source will be subjected to electron energy and be transformed into the also lower restriction of efficient that the relatively low efficient of laser thereby laser are transformed into the X-light radiation, therefore must use expensive superpower laser.
Just recently, do not have thermogenetic soft X-light radiation for producing directly, though the electron-beam excitation of having tested a kind of gas blowing target is resulting radiation, power and brightness are all relatively low, see Ter-Avetisyan et al., the SPIE compilation, No.4060, pp.204-208,2000.
Also have some bigger devices can produce the X-light radiation of high-average power and brightness as synchronous accelerator light source and so on.But, many application need mini-systems, and can produce the X-light radiation of relative high power and brightness.Small-sized cheap system, the user is more acceptant, therefore science and society is had bigger value.
Summary of the invention
Target of the present invention is to solve or alleviation the problems referred to above.More particularly, the present invention aims to provide a kind of method and apparatus that produces X-light or EUV radiation, and X-light that is produced or EUV radiation have the high brightness that combines with relative high-average power.
Another target of the present invention provides a kind of small-sized, the relatively cheap device that produces X-light or EUV radiation.
The present invention should also provide stable and produces X-light or EUV radiation, few technology that produces chip of while simply.
A further target of the present invention provides a kind of method and apparatus that produces the radiation that is applicable to the medical diagnosis and the examination of materials.
Another target of the present invention provides and is applicable to a kind of method and apparatus of using at lithography, no damage test, microscopy, crystal analysis, surface physics, material science, X-illumination phase spectroscopy (XPS), X-light fluorescence, x-ray diffraction protein structure mensuration and other X-light.
These targets and be described below in other target of being occurred can completely or partially realize by method and apparatus according to appended independent claims.Dependent claims have provided preferred embodiment.
Therefore, the invention provides the method for a kind of X-of generation light or EUV radiation, comprise by extruding from an outlet and form a target ejectisome at following a kind of liquid substance of pressure, and the step that this target ejectisome is propagated by an interaction area, also comprise the target ejectisome that makes at least one electron beam sensing interaction area, so that this electron beam and target ejectisome interact, and produce the step of X-light or EUV radiation.
Method and apparatus of the present invention allows any work with two kinds of patterns, and this depends on the material of target ejectisome, speed and diameter, and the size of the electric current of electron beam, voltage and focus.In first kind of mode of operation, hard X-light radiation directly is transformed into bremstrahlen by electron beam energy and the characteristic curve emission produces, and ejectisome is not heated to the temperature that forms plasma substantially.In second kind of mode of operation, soft X-light and EUV radiation form the plasma temperature generation by ejectisome is heated to.In any mode of operation, the present invention provides remarkable improvement to prior art.
In first kind of mode of operation, sputtering target and routine are used to produce the solid anodes of hard X-light radiation and have compared several advantages.More particularly, liquid jet body has very high density, is enough to allow the radiation that produces that high brightness and power are arranged.And this ejectisome is reproducible with regard to its character, therefore there is no need to make the target material cooling.In fact, target material is destructible, promptly is heated to the above temperature of its fusion temperature, and this is to result from the reproducibility of target material.Therefore, compare with non-renewable target, the beam power density on the target can significantly be increased.In addition, ejectisome also can obtain a kind of high propagation velocity by interaction area.Compare with the anode fixing or rotation of routine, because material is sent into the corresponding high-speed of interaction area, more energy under can depositing in the ejectisome of this quick propagation.These characteristics lump together and allow the brightness of the hard X-light radiation that produces that remarkable increase is arranged.Therefore, compare with routine techniques, use a kind ofly, generally should allow the brightness of the hard X-light radiation that produces that 100 times increase is arranged by extruding formed ejectisome shape, small-sized, high density, reproducible high speed target from an outlet at following a kind of liquid substance of pressure.
For the power density that realizes by the renewable target of this novelty being allowed, electron beam preferably should suitably be focused on the target.In general, produce the used accelerating voltage of electron beam and be about 5-500kV, but can be higher.Beam current is about 10-1000mA, but can be higher.
Second kind of mode of operation is to derive from a kind of so basic opinion: have at least an electron beam can replace laser beam to be formed for launching the plasma of soft X-light or EUV radiation.With compare based on the conventional equipment of above-mentioned LPP notion, method and apparatus of the present invention allows flush receptacle conversion efficiency (wall-plugconversion efficiency) that remarkable increase is arranged, and also allows lower cost and complexity.Other attracting characteristics comprise the low-debris emission, use repetition rate is unrestrictedly basic and uninterrupted.
In second kind of mode of operation, electron source generally should be about 10
10-10
13W/cm
3Transmit electron beam to interaction area down, to set up desirable plasma temperature.This is easy to realize by making electron source produce a kind of pulsed electron beam, and wherein pulse length preferably and the size match of ejectisome.So, the repetition rate of electron source determined the average power of the X-light that produces or EUV radiation.When using pulsed electron beam, ejectisome can destroy because of interacting with electron beam discontinuously.So the ejectisome propagation velocity preferably should be very high, so that spray physical efficiency stabilisation between each beam pulse.
Should be pointed out that electron beam can be pulse or continuous in the first and second two kinds of patterns.
In these two kinds of mode of operations, for the accessible beam power of optimum utilization, the electron beam best-focus is on ejectisome, so that the size of the size of electron beam and ejectisome is mated substantially.In this case, it is possible using line focus to replace point focusing, and like this, the lateral dimension of line focus and the lateral dimension of ejectisome mate substantially.Ejectisome preferably produces with the diameter of about 1-100 μ m, but can arrive several millimeters greatly.Therefore, radiation will be from a little interaction area with brightness emission.In order to utilize the radiation that is produced better, apparatus and method of the present invention can be used for being connected with X-light optical element naturally, as multiple capillary lens, compound refractor or X-light reflection mirror.
Best is, the target ejectisome is by extruding generation to a kind of liquid substance from an outlet such as nozzle or spout, generally produce general pressure, produce a kind of 10-1000m/s ejectisome propagation velocity that is about from outlet in the 0.5-500Mpa scope with a pump and/or a high-pressure aerated container.The material that the material that is extruded is not limited to generally be in a liquid state also can be included in from being heated to the solid of liquid state before outlet is extruded, and as certain metal, or is cooled to liquid gas before extruding from outlet, as certain inert gas.Or else, the material that is extruded can also be the material that is dissolved in the carrier liquid.It also is conceivable extruding a kind of gaseous material from outlet, as long as this gaseous material can form a kind of liquid jet body after extruding from outlet.Ejectisome can arrive different hydrodynamics states after it forms.Slow ejectisome is the laminar flow shape normally, splits under surface tension effects and drips a shape; Fast ejectisome more or less is a turbulence-like, is that the space is continuous in transition region before it becomes a kind of spray.Technology of the present invention can be utilized any hydrodynamics state of ejectisome.In another imaginabale embodiment, ejectisome allows to be frozen into solid-state before interacting with electron beam.
And ejectisome can conduct electricity, and also can be nonconducting, depends on the type of material.This is meaningful to the transmission that is deposited in the electric charge in the interaction area ejectisome.If ejectisome conducts electricity, electric charge can shift out from ejectisome itself, so that ejectisome will always be in earth potential basically.On the other hand, if ejectisome is nonconducting, the electric charge that is precipitated can shift out from interaction area by the motion of ejectisome itself.Any accumulation of interaction area all influences electron beam and focuses on.For nonconducting ejectisome, a kind of high ejectisome propagation velocity has to be beneficial to minimizes accumulation.
Air pressure can change in device of the present invention.The necessary layout of air pressure in this device both depended on the desired wavelength of the radiation that produces, and also depended on the type of electron source.In general, to the demand of vacuum environment, electron source is than interaction area height.It is possible using the different pressures of locality air pressure and difference pump scheme holding device different piece.
Description of drawings
Describe the present invention for example referring now to accompanying drawing, shown in the figure is a present preferred embodiment, has schematically illustrated a kind of the interaction by electron beam and liquid jet body and has produced the device of the present invention of X-light or EUV radiation.
Embodiment
The accompanying drawing shown device comprises a cell 1, an electron source 2 and a target generator 3.Electron source 2 will be settled to such an extent that make electron beam pulse or continuous 4 emissions advance cell 1, and electron beam 4 is focused on the target 5 that target generator 3 produced.Though do not illustrate in the accompanying drawing, have in fact more than a branch of electron beam 4 and can produce, these electron beams 4 from an above direction focusing in target 5.Electron source 2, in have and quicken and the focusing unit (not shown), conventional structure can be arranged, power by a voltage source 6.Electron source 2 can be any source from simple negative electrode source to a complicated high-energy source such as circular orbit source (racetrack), depends on the feature of desirable electron beam 4.
As will be described below, X-light or EUV radiation (in the accompanying drawing shown in the arrow) is by the generation that interacts in cell 1 of electron beam 4 and target 5.Usually, because the needs of electron source 2, cell 1 provides a kind of vacuum environment.And soft X-light and the EUV radiation height in material absorbs and often requires a kind of high vacuum environment.
In order to form a target 5 small, spatial stability in vacuum environment, target generator 3 will be settled to such an extent that produce the continuous ejectisome in a kind of space 5 from a kind of liquid.The generator of target shown in the accompanying drawing 3 comprises a container 7 and an outlet 8 that forms ejectisome, promptly generally is a nozzle hole, and it is connecting the liquid outlet of container 7 and the opening of cell 1.Container 7 is equipped with and will forms the material of ejectisome 5.According to the kind of material, container 7 can be equipped cooling or heating element (not shown), to keep material at the 0.5-500MPa of high pressure-usually-down, be in a liquid state when outlet 8 is extruded.Described pressure is generally by carrying gases at high pressure to obtain to container 7 gas vents 7 '.The diameter of outlet 8 is generally less than 100 μ m.The final ejectisome 5 that forms, stable and small, have the diameter the same substantially with outlet 8, in cell 1 with the speed propagation of about 10-1000m/s.Though do not illustrate in the accompanying drawing, ejectisome 5 can be propagated to a split point, splits into automatically there and drips shape or vaporific, and this depends on the running parameter of target generator 3.Distance to split point is determined by the hydrodynamics character of liquid substance, the size of outlet 8 and the speed of liquid substance basically.
When liquid substance leaves outlet 8, owing to evaporation is cooled off.So ejectisome 5 may solidify, so that not having drop or spray to form, is conceivable.
As shown in drawings, electron beam 4 bump ejectisomes 5 occur in ejectisome 5 automatically or be excited to split into and drip before the shape, promptly when it remains a little collimation ejectisome.Therefore, the interaction area 9 between electron beam 4 and the ejectisome 5 is positioned at a space continuous part of ejectisome 5, and promptly its length significantly surpasses the part of diameter.Therefore, as described below, this device can be continuously or semi-continuous working, produces X-light or EUV radiation.And this method causes the enough spatial stabilities of ejectisome 5, allows the focus of electron beam 4 to drop on the ejectisome 5, and approximate have a same size of ejectisome 5 diameters.Under the situation of pulsed electron beam 4, this method has also reduced the requirement of electron source 2 with target generator 3 time synchronized.In some cases, some ejectisomes of being made up of the space continuous part that separates also can provide confers similar advantages.But, should emphasize that any coagulation that forms from liquid jet body all can be used as the target of electron beam in the scope of the invention, if its drop that to be the space of liquid or solid continuous or by the spray of dripping or wadding is formed.
Just the feature that adapts to target 5 by the feature that makes electron beam 4, the interaction of electron beam 4 and ejectisome 5, in first kind of mode of operation, cause from interaction area 9 by direct switching emission radiation, do not make ejectisome 5 be heated to the temperature that forms plasma substantially.In second kind of mode of operation, these features are adapted like this, so that ejectisome 5 is heated to a kind of temperature of suitable formation plasma.The selection of mode of operation is depended on the desirable wave-length coverage of the radiation that is produced.Mode of operation based on plasma is extremely effective to producing soft X-light and EUV radiation, promptly in tens eV arrive a few keV scopes, and the direct transformation working pattern that does not produce plasma substantially is more effective to producing hard X-light, generally in about 10keV arrives about 1000keV scope.
Below the work of device with first and second kinds of patterns will be discussed usually.Also provided and to have imagined the example that to realize, do not limited disclosing of these examples.
In first kind of mode of operation, being mainly used in generation at first is the hard X-light radiation that is used for medical diagnosis, and the feature of the corresponding in such a way target 5 of electron source 2 is controlled, so that does not form plasma substantially at interaction area 9.So hard X-light radiation obtains by bremstrahlen and characteristic curve emission.Preferably, from outlet 8 to interaction area 9 apart from long enough, general 0.5-10mm, so that the interaction of electron beam-ejectisome does not damage outlet.Can imagine in the example that to realize at one, use the ejectisome 5 of the liquid metals of the about 30 μ m of diameter, the about 600m/s of propagation velocity, ejectisome 5 with electron beam 4 irradiation distance outlets 8 about 10mm of about 100mA and 100keV, electron beam 4 focuses on ejectisome 5, to obtain about 10MW/mm at interaction area 9
2Power density.Discuss as place of matchmakers as the front, this power density is roughly than in conventional solid target system 100 times.By means of the present invention, can obtain a kind of high-resolution video with a kind of low time for exposure.In first kind of mode of operation, ejectisome 5 preferably forms by being heated to liquid metal.In this case, tin (Sn) should be handy, though other metal or alloy also can be used for producing the radiation of desired wave-length coverage.And, use diverse material, as be cooled to liquid gas or be dissolved in material in the carrier liquid, produce ejectisome 5, also be conceivable.
Device with first kind of pattern work can comprise a window (not shown) to the X-optical transparency, in order that make the radiation that produced from cell 1 to protein or other target can imaging the outside.By with a small liquid jet body 5 as target, the size of X-light radiation produces from a minimum interaction area 9, causes a kind of high brightness.
In second kind of mode of operation, mainly wanting to produce at first is soft X-light and/or the EUV radiation that is used for EUV projection lithography art, the feature of the corresponding in such a way target 5 of electron source 2 is controlled, so that forms a kind of plasma that is in suitable temperature at interaction area 9.So soft X-light radiation and/or EUV radiation obtain by line emission continuous and feature.Best is pulsed electron beam 4 irradiation ejectisomes 5, so electron source 2 controlled each beam pulses formation plasma that pass through.Preferably, from outlet 8 to interaction point 9 apart from long enough, general 0.5-10mm, so that formed plasma does not damage outlet.Can imagine in the example that to realize at one, use the ejectisome 5 of the liquid inert gas of the about 30 μ m of diameter, the about 50m/s of propagation velocity, ejectisome 5 in order to pulsed electron beam 4 irradiation distance outlets 8 about 10mm of the about 10A with about 5ns pulse length of the repetition rate work of about 50kHz and 1MeV, electron beam 4 focuses on ejectisome 5, to obtain about 10 at interaction area 9
12W/cm
2Power density and the average beam power of 2.5kW.A kind of like this system roughly can provide EUV projection lithography system of future generation required EUV power.
In second kind of mode of operation, the special characteristic of electron beam 4 is not conclusive, as long as wherein average power is enough high, pulse power and burst length and target coupling are so that obtain suitable plasma formation temperature at interaction area 9.In second kind of mode of operation, ejectisome 5 is preferably formed by a kind of inert gas that is cooled to liquid state, is capped to avoid the senser in the device.For example, learn from laser-plasma research, the xenon of liquefaction causes the strong X-light emission of 10-15nm wave-length coverage (as seeing Hansson et al., xenon liquid-ejectisome laser-the plasma source of EUV lithography [Xenonliquid-jet laser-plasma source for EUV lithography], carry the SPIE compilation, vol.3997,2000).Removing the inert gas of liquefaction, use diverse material, as be dissolved in the material in the carrier liquid or the metal of liquefaction, also is conceivable.
Can comprise a light collection system (not shown) of forming by the multilayer reflective mirror with second kind of pattern work, the device that is designed to lithography and microscopy, gather the EUV produced or the major part of soft X-light radiation, and it is delivered on the illumination optical equipment and miscellaneous equipment of lithography/microscopy system.By using from the small target of ejectisome 5 forms of liquid substance generation, the generation of chip is very low.Device of the present invention operation of pattern in second has provides the identical potential of performance as the LPP system, but cost is lower, because the laser of KW level is very complicated and expensive, in addition, for electron source, the flush receptacle conversion efficiency is also much higher than laser.
Should also be noted that when electron source 2 and work, and/or during the transmitted pulse electron radiation, the major part of liquid substance can keep not being subjected to the influence of electron beam 4, and carries out straightway propagation by cell 1 for the generation of the X-light of first kind of pattern.This can cause the pressure in the vacuum cell 1 to increase owing to evaporating.This problem can be resolved, and for example uses a kind of poor pump scheme shown in the drawings, and wherein, ejectisome 5 is collected at an aperture 10, pushes collected material its pump of sending container 7 back to by one then, is recycled to container 7.
Will be appreciated that method and apparatus of the present invention can provide radiation for the application that is used for medical diagnosis, no damage test, lithography, crystal analysis, microscopy, material science, micro--surface physics, protein structure x-ray diffraction mensuration, X-illumination phase spectrum (XPS), X-light fluorescence and some other X-light or EUV.
Claims (35)
1. method that produces X-light or EUV radiation, comprise by under pressure, extruding a kind of liquid substance and form a target ejectisome (5) from an outlet, the step that this target ejectisome is propagated by an interaction area (9), also comprise the ejectisome (5) at least one electron beam (4) sensing interaction area (9), so that electron beam (4) produces the step of described X-light or EUV radiation with ejectisome (5) interaction.
2. the method for claim 1, wherein material comprises a kind of liquid solid material, preferably metal of being heated to.
3. the method for claim 1, wherein material comprises a kind of liquid gas, preferably inert gas of being cooled to.
4. one kind as any one described method among the claim 1-3, comprise that controlling electron beam (4) and ejectisome (5) interact with a kind of intensity, so that produce bremstrahlen and characteristic curve emission in hard X-light district, do not heat the further step of ejectisome (5) substantially to the plasma formation temperature.
5. one kind as any one described method among the claim 1-3, comprise that controlling electron beam (4) and ejectisome (5) interact with a kind of intensity, so that ejectisome is heated to the plasma formation temperature, so that produces the further step of soft X-light radiation or EUV radiation.
6. one kind as any one described method among the claim 1-5, and wherein ejectisome (5) is solid-state at interaction area (9).
7. one kind as any one described method among the claim 1-5, and wherein ejectisome (5) is in a liquid state at interaction area (9).
8. any one described method in the claim as described above, wherein the continuous part in a space of ejectisome (5) interacts in electron beam (4) and the interaction area (9).
9. method as claimed in claim 7, wherein at least one drop interacts in electron beam (4) and the interaction area (9).
10. one kind as claim 7 or 9 described methods, wherein in electron beam (4) and the interaction area (9) by the spray interaction of dripping or wadding is formed.
11. any one described method in the claim as described above, wherein electron beam (4) leaves the last interaction of distance that outlet (8) is about 0.5-10mm with ejectisome (5) at one.
12. any one described method in the claim as described above, wherein electron beam (4) focuses on ejectisome (5), so that the lateral dimension of the lateral dimension of electron beam (4) and ejectisome (5) mates substantially.
13. any one described method in the claim as described above, wherein ejectisome (5) produces with the diameter that is about 1-10000 μ m.
14. any one described method in the claim as described above, wherein electron beam (4) produces with a kind of accelerating voltage that is about 5-500KV, and the beam current that is about 10-1000mA is arranged.
15. any one described method in the claim as described above wherein has at least a pulsed electron beam (4) to point to ejectisome (5).
16. any one described method in the claim as described above wherein has at least a continuous electron beam (4) to point to ejectisome (5).
17. device that produces X-light or EUV radiation, comprise a target generator (3), it settles to such an extent that can form a target ejectisome by extrude a kind of liquid substance from an outlet under pressure, and this target ejectisome is propagated by an interaction area, also comprise an electron source (2), in order that at least one electron beam (4) is provided, and making at least one electron beam (4) point to ejectisome (5) in the interaction area (9), described radiation interacts with ejectisome (5) by electron beam (4) and produces.
18. a device as claimed in claim 17, wherein material comprises a kind of liquid solid material, preferably metal of being heated to.
19. a device as claimed in claim 17, wherein material comprises a kind of liquid gas, preferably inert gas of being cooled to.
20. one kind as any one described device among the claim 17-19, wherein electron source (2) is controllable, to influence the interaction that electron beam (4) and ejectisome (5) carry out with a kind of electron beam intensity, so that produce bremstrahlen and characteristic curve emission in hard X-light district, and do not heat ejectisome (5) substantially to the plasma formation temperature.
21. one kind as any one described device among the claim 17-19, wherein electron source (2) is controllable, to influence the interaction that electron beam (4) and ejectisome (5) carry out with a kind of electron beam intensity, so that ejectisome (5) is heated to the plasma formation temperature, so that produces soft X-light radiation or EUV radiation.
22. one kind as any one described device among the claim 17-21, its generator that hits (3) is controllable, to provide coagulation at interaction area (9).
23. one kind as any one described device among the claim 17-22, its generator that hits (3) is controllable, so that a part that the space is continuous of ejectisome (5) to be provided at interaction area (9), at least one drop or by the spray of dripping or wadding is formed.
24. one kind as any one described device among the claim 17-23, wherein electron source (2) is controllable, so that electron beam (4) leaves the last sensing ejectisome of distance (5) that outlet (8) is about 0.5-10mm at one.
25. one kind as any one described device among the claim 17-24, wherein electron source (2) is controllable, with by making electron beam (4) focus on ejectisome (5), the lateral dimension of electron beam (4) and the lateral dimension of ejectisome (5) is mated substantially.
26. one kind as any one described device among the claim 17-25, its generator that hits (3) is suitable for producing the ejectisome (5) that diameter is about 1-10000 μ m.
27. one kind as any one described device among the claim 17-26, wherein electron source (2) is controllable, to produce electron beam (4) with a kind of accelerating voltage that is about 5-500KV, electron beam is had the average beam electric current that is about 10-1000mA.
28. one kind as any one described device among the claim 17-27, wherein electron source (2) is controllable, in order that produce the electron beam (4) of at least one pulse.
29. one kind as any one described device among the claim 17-28, wherein electron source (2) is controllable, in order that produce at least one continuous electron beam (4).
30. using as any one described method among the claim 1-16 or with being used for medical diagnosis as the radiation that any one described device produced among the claim 17-29.
31. using as any one described method among the claim 1-16 or with being used to not have damage test as the radiation that any one described device produced among the claim 17-29.
32. using as any one described method among the claim 1-16 or with being used for EUV projection lithography art as the radiation that any one described device produced among the claim 17-29.
33. using as any one described method among the claim 1-16 or with being used for crystal analysis as the radiation that any one described device produced among the claim 17-29.
34. using as any one described method among the claim 1-16 or with being used for microscopy as the radiation that any one described device produced among the claim 17-29.
35. measure using as any one described method among the claim 1-16 or be used for the protein structure x-ray diffraction as the radiation that any one described device produced among the claim 17-29.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE00027854 | 2000-07-28 | ||
| SE0002785A SE0002785D0 (en) | 2000-07-28 | 2000-07-28 | Method and apparatus for generating x-ray or EUV radiation as well as use thereof |
| SE00030734 | 2000-08-31 | ||
| SE0003073A SE522150C2 (en) | 2000-08-31 | 2000-08-31 | Generating X=ray or extreme UV radiation by directing electron beams onto liquid metal or liquefied noble gas to generate soft radiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1466860A true CN1466860A (en) | 2004-01-07 |
| CN1272989C CN1272989C (en) | 2006-08-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB018163963A Expired - Lifetime CN1272989C (en) | 2000-07-28 | 2001-07-18 | Method and apparatus for generating X-ray or EUV radiation |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1305984B1 (en) |
| JP (1) | JP5073146B2 (en) |
| CN (1) | CN1272989C (en) |
| AT (1) | ATE489838T1 (en) |
| AU (1) | AU2001272873A1 (en) |
| DE (1) | DE60143527D1 (en) |
| WO (1) | WO2002011499A1 (en) |
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- 2001-07-18 DE DE60143527T patent/DE60143527D1/en not_active Expired - Lifetime
- 2001-07-18 AU AU2001272873A patent/AU2001272873A1/en not_active Abandoned
- 2001-07-18 AT AT01952078T patent/ATE489838T1/en not_active IP Right Cessation
- 2001-07-18 CN CNB018163963A patent/CN1272989C/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2004505421A (en) | 2004-02-19 |
| AU2001272873A1 (en) | 2002-02-13 |
| WO2002011499A1 (en) | 2002-02-07 |
| ATE489838T1 (en) | 2010-12-15 |
| EP1305984B1 (en) | 2010-11-24 |
| CN1272989C (en) | 2006-08-30 |
| DE60143527D1 (en) | 2011-01-05 |
| EP1305984A1 (en) | 2003-05-02 |
| JP5073146B2 (en) | 2012-11-14 |
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