CN1448908A - Electronic device, method for driving electronic device, electrooptical device and electronic apparatus - Google Patents
Electronic device, method for driving electronic device, electrooptical device and electronic apparatus Download PDFInfo
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- CN1448908A CN1448908A CN03107594A CN03107594A CN1448908A CN 1448908 A CN1448908 A CN 1448908A CN 03107594 A CN03107594 A CN 03107594A CN 03107594 A CN03107594 A CN 03107594A CN 1448908 A CN1448908 A CN 1448908A
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/12—Test circuits or failure detection circuits included in a display system, as permanent part thereof
Abstract
The invention provides an electronic circuit, electronic device, method of driving the electronic circuit, electrooptical device, and electronic equipment for detecting operational characteristics of the electronic circuit at a high precision. A pixel circuit 20 includes a switching transistor Q13 connected between a driving transistor Q11 and organic EL element 21, and detecting transistor Q14 for supplying a current detecting circuit 19a with a driving current output by the driving transistor Q11. A holding capacitor C1 is supplied with test data voltage Vdata by turning on a switching transistor Q12 with the switching transistor Q13 turned off. The current detecting circuit 19a is supplied with a driving current from the driving transistor through the detecting transistor Q14 by turning on the detecting transistor Q14 with the switching transistor Q13 turned off. The current detecting circuit 19a thus detects the driving current in response to the test data voltage Vdata.
Description
Technical field
The present invention relates to driving method, electrooptical device and the electronic equipment of a kind of electronic circuit, electronic installation, electronic circuit.
Background technology
In recent years, as the display device of electrooptical device, use the electrooptical device of organic EL noticeable.In the electrooptical device of this use organic EL, a type of drive is a driven with active matrix.
In the electrooptical device of driven with active matrix mode,, each organic EL is provided with image element circuit respectively in order to control the briliancy of organic EL.Provide data-signal (magnitude of voltage or current value) to control the briliancy gradient of organic EL in each image element circuit by maintenance electric capacity corresponding to the briliancy gradient to image element circuit.That is, to keeping the electric capacity charging corresponding to the electric charge of setting the glorious degrees gradient.
In addition, set the conducting state that drives with TFT (ThinFilm Transistro) corresponding to the quantity of electric charge that keeps keeping in the electric capacity, provide the electric current corresponding to described conducting state (for example with reference to the international WO98/36406 communique that discloses) to organic EL.
But,, be difficult to the characteristic of the whole active components of strict homogenising though image element circuit is made of active components such as at least one transistors.Especially the property difference of thin film transistor (TFT) (TFT) that constitutes pixel circuit such as display is big.Therefore, when input predetermined data signal, be difficult to the briliancy that obtains expecting.
In addition, exist characteristic along with active component that constitutes image element circuit or photovalve through the time worsen and the problem that changes.
Summary of the invention
In order to eliminate described problem, the object of the present invention is to provide a kind of electronic circuit, electronic installation, driving method, electrooptical device and the electronic equipment of electronic circuit that can high Precision Detection electronic circuit operating characteristic.
The 1st electronic installation of the present invention possesses a plurality of element circuits, and it is characterized in that: each of described a plurality of element circuits all comprises: the 1st transistor; Holding element will remain electric weight through the electric signal that described the 1st transistor provides; The 2nd transistor is controlled conducting state according to the electric weight that keeps in the described holding element; Driven element provides the magnitude of current with respect to described conducting state; With the 3rd transistor, be connected with described the 2nd transistor series, each of described a plurality of element circuits all can be connected in the inspection portion that the magnitude of current is used of detecting through described the 3rd transistor.
In view of the above, by making the 3rd transistor turns, can through the 3rd transistor obtain offering driven element with respect to the magnitude of current from the 2nd transistorized quantity of electric charge.In addition, both described the 3rd transistor can be set in each element circuit, also described the 3rd transistor can be set jointly the plurality of units circuit in described a plurality of element circuits.
The 2nd electronic installation of the present invention possesses a plurality of element circuits, and it is characterized in that: each of described a plurality of element circuits all comprises: the 1st transistor; Holding element will remain electric weight through the electric signal that described the 1st transistor provides; The 2nd transistor is controlled so as to according to the electric weight that keeps in the described holding element and is conducting state; With the driven element that provides with respect to the magnitude of current of described conducting state, described the 1st transistor series of described the 2nd transistor AND gate connects, and each of described a plurality of element circuits can be connected in through described the 1st transistor and detect in the inspection portion that the magnitude of current uses.
As the corresponding embodiment of the 2nd electronic installation, for example aftermentioned embodiment's 4 has an electronic installation that circuit that current signal is provided as electric signal constitutes.
In described electronic installation, between described driven element and described the 2nd transistor, be connected the 4th transistor.
In view of the above, making the 4th transistor is cut-off state, provide under the state of electric current to described driven element stopping, by making described the 3rd transistor or described the 1st transistor is conducting state, can detect the magnitude of current that passes through the 2nd transistorized electric current that should offer described driven element through described the 3rd transistor or described the 1st transistor.That is, carry out between detection period in described inspection portion, described at least the 4th transistor is a cut-off state.
In described electronic installation, described driven element also can be a current driving element such as organic EL for example.The luminescent layer of organic EL is made of organic material.
In described electronic installation, be preferably in each of described a plurality of element circuits described the 3rd transistor all is set.Can detect each current characteristics of described a plurality of element circuit thus.
In described electronic installation, described holding element also can be for example to offer the capacity cell that each electric signal of described a plurality of element circuit remains the quantity of electric charge.
In described electronic installation, described holding element also can be memory elements such as SRAM.
In described electronic installation, possess memory circuit, storage is to the offset of the electric signal obtained by described inspection portion, provide through described the 1st transistor.
In view of the above, the operating characteristic that can use the offset of storing in the memory circuit to come the compensate for electronic device is adjusted the action of driven element.
In the driving method of electronic installation of the present invention, this electronic installation possesses: the 1st transistor; The holding element that will keep as electric weight by the electric signal that described the 1st transistor provides; Be set to the 2nd transistor of conducting state according to the electric weight that keeps in the described holding element; Driven element with respect to the magnitude of current of described conducting state is provided; The 3rd transistor with being connected with described the 2nd transistor series is characterized in that: possess: make described the 1st transistor turns, will remain on the 1st step in the described holding element based on the electric weight of described electric signal; With making described the 3rd transistor is conducting state, is electrically connected described the 2nd transistor and detects the 2nd step of the inspection portion of the magnitude of current through described the 3rd transistor, detects by comprising the magnitude of current of described the 2nd transistor and the described the 3rd transistorized current path electric current.
In view of the above, the magnitude of current that inspection portion should offer driven element can detect in described inspection portion.
In described electronic installation driving method, described current path does not preferably comprise described driven element.
In described electronic installation driving method, described driven element also can be current driving elements such as organic EL.
The 1st electrooptical device of the present invention possesses a plurality of image element circuits corresponding to the configuration of the cross part of a plurality of sweep traces and a plurality of data lines, and it is characterized in that: each of described a plurality of image element circuits all comprises: be controlled so as to the 1st transistor into conducting state by the sweep signal that provides by corresponding sweep trace in described a plurality of sweep traces; Will be in described a plurality of data lines the holding element that keeps as electric weight of the data-signal that provides of respective data lines and described the 1st transistor; Be controlled so as to the 2nd transistor according to the electric weight that keeps in the described holding element into conducting state; Photovalve with respect to the magnitude of current of described conducting state is provided; With the 3rd transistor that is connected with described the 2nd transistor series, each of described a plurality of image element circuits all can be connected in the inspection portion of detecting the magnitude of current through described the 3rd transistor.
In described electrooptical device, both can in each of described a plurality of image element circuits, described the 3rd transistor be set, also described the 3rd transistor can be set jointly in the several image element circuits in described a plurality of image element circuits.
In described electrooptical device, described the 3rd transistor also can be in described a plurality of transistors respective data lines be connected in described inspection portion.In view of the above, do not check with wiring even be not provided with, also can be with data line with conducting a survey with wiring.
The 2nd electrooptical device of the present invention possesses a plurality of image element circuits corresponding to the configuration of the cross part of a plurality of sweep traces and a plurality of data lines, and it is characterized in that: each of described a plurality of image element circuits all comprises: be controlled so as to the 1st transistor into conducting state by the sweep signal that provides by corresponding sweep trace in described a plurality of sweep traces; Will be in described a plurality of data lines the holding element that keeps as electric weight of the data-signal that provides of respective data lines and described the 1st transistor; The 2nd transistor that is controlled as conducting state and is connected according to the electric weight that keeps in the described holding element with described the 1st transistor series; With the photovalve that provides with respect to the magnitude of current of described conducting state, each of described a plurality of image element circuits all can be connected in the inspection portion of detecting the magnitude of current through described the 1st transistor.
In described electrooptical device, described inspection portion comprises: current detection circuit, detect the described magnitude of current; The compensation value calculation circuit according to the detected magnitude of current of described current detection circuit, is obtained the offset to described electric signal; And memory circuit, storage when setting described electric signal, compensates described electric signal with described offset to the described offset of described image element circuit.
In view of the above, obtain the offset that is used to adjust image element circuit operating characteristic difference, will the described offset of image element circuit be stored in the memory circuit by the compensation value calculation circuit.Therefore, the operating characteristic that can use the electronic circuit offset stored in the memory circuit to come the compensation pixel circuit is adjusted the action of driven element.
Electronic equipment of the present invention is installed described electrooptical device.
Description of drawings
Fig. 1 is the circuit block diagram that the OLED display circuit of expression present embodiment constitutes.
Fig. 2 is the circuit block diagram that the internal circuit of expression display screen board and data line drive circuit constitutes.
Fig. 3 is the circuit diagram that the internal circuit of remarked pixel circuit constitutes.
Fig. 4 is the sequential chart of each signal in the normal mode.
Fig. 5 is the sequential chart of each signal in the test mode.
Fig. 6 is the major part circuit block diagram of explanation embodiment 2.
Fig. 7 is the stereographic map that the mobile model personal computer of expression explanation embodiment 3 constitutes.
Fig. 8 is the stereographic map of formation of the mobile phone of expression explanation embodiment 3.
Fig. 9 is the circuit diagram that the image element circuit internal circuit of expression embodiment 4 constitutes.
Among the figure: C1-is as the maintenance electric capacity of capacity cell, Q11-is as the 2nd transistorized driving transistor, Q12-is as the 1st transistorized switch transistor, Q13-is as the 4th transistorized light emitting control transistor, Q14-is as the 3rd transistorized detection transistor, Y1～Yn-sweep trace, Va-the 1st subscan line, Vb-the 2nd subscan line, X1～Xm-data line, 10-is as the OLED display of electro-optical device, 11-display screen board, 17-constitutes the control circuit of modified value computing circuit, and 17a-is as the storer of memory circuit, and 19-constitutes the testing fixture of modified value computing circuit, 19a-electric circuit inspection circuit, 20-is as the image element circuit of electronic circuit, and 21-is as the organic EL of driven element, the 31a-current detection circuit.
Embodiment
(embodiment 1)
With reference to Fig. 1-Fig. 5 specific embodiment 1 of the present invention is described.
Fig. 1 represents the circuit block diagram as the circuit formation of the OLED display 10 of electrooptical device.Fig. 2 represents the circuit block diagram that the internal circuit of display screen board and data line drive circuit constitutes.The circuit diagram that the internal circuit of Fig. 3 remarked pixel circuit constitutes.
Among Fig. 1, OLED display 10 possesses display screen board 11, data line drive circuit 12, scan line drive circuit 13, storer 14, oscillatory circuit 15, selects circuit 16 and control circuit 17.
Each key element 11-17 of OLED display 10 also can by respectively independently electronic unit constitute.For example, each key element 12-17 also can be made of the conductor integrated circuit device of 1 chip.In addition, all or part of electronic unit that also can constitute one of each key element 11-17.For example, also can be in display screen board 11 integrally formed data line drive circuit 12 and scan line drive circuit 13.The all or part of of each inscape 12-16 also is made of programmable I C chip, and its function also comes software ground to realize by the program that writes in the IC chip.
As shown in Figure 2, display screen board 11 has and is arranged in rectangular a plurality of image element circuits 20.That is,, be arranged in each image element circuit 20 rectangular by being connected each image element circuit 20 respectively along between a plurality of data line X1-Xm (m is an integer) of column direction and a plurality of sweep trace Y1-Yn that follow direction (n is an integer).In each image element circuit 20, have the organic EL 21 that constitutes luminescent layer by organic material and be used as driven element.In addition, though the aftermentioned transistor that is formed in the image element circuit 20 can be the transistor of silicon substrate, constitute by thin film transistor (TFT) (TFT) in the present embodiment.
12 couples of described each data line X1-Xm of data line drive circuit are provided with data voltage generative circuit 12a respectively.Each data voltage generative circuit 12a is through corresponding data line X1-Xm separately, electric signal is provided, promptly is data-signal (data voltage Vdata) in the present embodiment to image element circuit 20.If image element circuit 20 is set the internal state of this image element circuit 20 corresponding to this data voltage Vdata, the current value that flows through in the then corresponding with it control organic EL 21 is controlled the briliancy of this organic EL 21.
Scan line drive circuit 13 selects to drive among described a plurality of sweep trace Yn, selects the one-row pixels circuit bank.Sweep trace Y1-Yn is made of the 1st subscan line Va and the 2nd subscan line Vb respectively.Scan line drive circuit 13 is exported the 1st to the 1st subscan line Va and is selected signal SL1, exports the 2nd to the 2nd subscan line Vb and selects signal SL2.The video data that storer 14 storages provide from computing machine 18.In addition, storer 14 is provided by the check video data that provides from the testing fixture 19 that constitutes the compensation value calculation circuit.Oscillatory circuit 15 provides the benchmark actuating signal to other inscape of OLED display 10.
Select circuit 16 to be arranged between display screen board 11 and the data line drive circuit 12.Each selects circuit 16 to possess commutation circuit 16a in each data line X1-Xm.Each commutation circuit 16a is made of the 1st gate transistor Q1 and the 2nd gate transistor Q2 respectively as shown in Figure 3.In addition, each selects the 1st gate transistor Q1 of circuit 16 to connect corresponding data line X1-Xm and corresponding data voltage generative circuit 30 respectively.Each is selected the 2nd gate transistor Q2 of circuit 16 to connect corresponding data line X1-Xm respectively and is arranged on the current detection circuit 19a that is provided with as among each the respective data lines X1-Xm in the testing fixture 19 of inspection portion.Come conducting respectively, end control the 1st and the 2nd gate transistor Q1, Q2 according to the 1st and the 2nd gating signal G1, G2 from control circuit 17.
Described each the key element 11-16 of control circuit 17 unified controls.Control circuit 17 will be represented in the storeies 14 display screen dish 11 show states, described matrix data storage, be transformed to the glorious degrees of each organic EL 21 of expression from the video data (view data) of computing machine 18.Matrix data comprises and is used for selecting successively the scan line driving signal of one-row pixels circuit bank and the data line drive signal that the data voltage Vdata level of selecting image element circuit group organic EL 21 briliancy is set in decision.In addition, scan line driving signal is offered scan line drive circuit 13.The data line drive signal is offered data line drive circuit 12.
When control circuit 17 uses testing fixtures 9 to come each image element circuit 20 of display screen dish 11 checked in OLED display 10, become test mode.In case become test mode, then control circuit 17 is transformed to the matrix data (check and use matrix data) of the glorious degrees of each organic EL 21 of expression with storage in the described storer 14 from the check of testing fixture 19 with video data (view data).
This check comprises check scan line driving signal and the decision setting selection image element circuit group organic EL 21 checks check data line drive signal of the check of briliancy with data voltage Vdata level that is used for selecting successively the one-row pixels circuit bank with matrix data.In addition, will check with scan line driving signal and offer scan line drive circuit 13.To check with the data line drive signal and offer data line drive circuit 12.Under test mode, control circuit 17 will check that the 1st and the 2nd gating signal G1, the G2 of usefulness offer described selection circuit 16 to each image element circuit 20 of display screen dish 11.Therefore, when not being the normal mode of test mode, control circuit 17 is only exported the 1st gating signal G1, and the state that keeps the 1st gate transistor Q1 conducting, the 2nd gate transistor Q2 to end.
Below, illustrate that with reference to Fig. 3 the internal circuit of image element circuit 20 constitutes.For convenience of description, illustrate on the intersection point that is configured in m data line Xm and n sweep trace Yn, be connected in the image element circuit 20 between two data line Xm and the sweep trace Yn.
Switch is made of the N channel TFT with transistor Q13 with transistor Q12 and light emitting control.Drive with transistor Q11 and detect and constitute by the P channel TFT with transistor Q14.
Drive with the drain electrode of transistor Q11 and be connected in the anode of described organic EL 21 through switch with transistor Q13, source electrode is connected in power lead L1.Be connected maintenance capacitor C 1 driving with between the grid of transistor Q11 and the power lead L1.In addition, the grid that drives with transistor Q11 is connected in described data line Xm through switch with transistor Q12.The drain electrode that drives with transistor Q11 is connected in described data line Xm through described detection with transistor Q14.
Switch connects the 1st subscan line Va with the grid of transistor Q12.Described detection is connected in described the 1st subscan line Va with the source electrode of transistor Q14.In addition, light emitting control all is connected in the 2nd subscan line Vb with transistor Q13 with the grid that detects with transistor Q14.
Below, the effect of the OLED display 10 of described formation is described according to the action of image element circuit 20.
(normal mode)
At first, according to each signal SL1, the SL2 shown in Fig. 4, the sequential chart of G1, G2 normal mode is described.
Current, when selecting n horizontal scanning line Yn, when each image element circuit 20 that is connected in sweep trace Yn carries out luminous action, making switch from scan line drive circuit 12 through the 1st subscan line Va of sweep trace Yn output is that the 1st of conducting state is selected signal SL1 with transistor Q12, makes switch become conducting state with transistor Q12.Meanwhile, making the 1st gate transistor Q1 from control circuit 17 to each commutation circuit 16a output of selecting circuit 16 is the 1st gating signal G1 of conducting state, makes the 1st gate transistor Q1 become conducting state.At this moment, according to the conducting of switch, provide data voltage Vdata from each data voltage generative circuit 12a to the maintenance capacitor C 1 of each image element circuit 20 of correspondence respectively with transistor Q12 and the 1st gate transistor Q1.Behind the elapsed time t1, providing and making switch is that the 1st of cut-off state is selected signal SL1 and the 1st gating signal G1 with transistor Q12 and the 1st gate transistor Q1, finishes during data write.
The switch through being in conducting state with transistor Q12 during image element circuit 20 provides data voltage Vdata, detect and to be respectively conducting state with transistor Q13 with transistor Q14 and light emitting control.
In time t1 way or behind the elapsed time t1, beginning provides corresponding to the electric current that drives with the conducting state of transistor Q11 to organic EL.
Then, light emitting control is a cut-off state with transistor Q13, stops to provide electric current to organic EL, waits for the beginning during next data writes.
Through switch with transistor Q12 to image element circuit 20 provide data voltage Vdata during in, detecting with transistor Q14 can be any one state of conducting state and cut-off state.
But, mobile Weak current may noisy data voltage Vdata with transistor Q14 and between image element circuit 20 and data line Xm because the detection through being in conducting state, so preferably as present embodiment, through switch with transistor Q12 during image element circuit 20 provides data voltage Vdata, make that to detect with transistor Q14 be cut-off state.
And, during the integral body of normal mode in, be that cut-off state is also harmless even detect with transistor Q14.
In the present embodiment, though light emitting control is that the circuit that carries out complimentary action constitutes with transistor Q13 and detection with transistor Q14, much less also can distinguish independent control.
By repeatedly should action, controlling the organic EL 21 that is positioned at each image element circuit 20 on each sweep trace Y1-Yn respectively corresponding to the briliancy of data voltage Vdata, OLED display 10 shows based on the image from the video data of computing machine 18.
(test mode)
Below, the test mode as driving method one form is described.OLED display 10 becomes test mode by being connected in testing fixture 19.In case use video data from testing fixture 19 to OLED display 10 output checks, then control circuit 17 becomes test mode, check is transformed to the matrix data (check matrix data) of the glorious degrees gradient of representing each organic EL 21 with video data.In addition, control circuit 17 is checked with scan line driving signal and check data line drive signal to scan line drive circuit 13 and data line drive circuit 12 outputs.
Fig. 5 makes the sequential chart of each signal SL1, SL2, G1, G2 in the expression test mode.Current, for example making switch from scan line drive circuit 13 to the 1st subscan line Va of sweep trace Yn output is that the 1st of conducting state is selected signal SL1 with transistor Q12, and the switch that is positioned at each image element circuit 20 on the sweep trace Yn becomes conducting state with transistor Q12.Meanwhile, making the 1st gate transistor Q1 from control circuit 17 to each commutation circuit 16a output of selecting circuit 16 is the 1st gating signal G1 of conducting state, and the 1st gate transistor Q1 of each commutation circuit 16a becomes conducting state.
Thus, the switch through being positioned at conducting state provides check data voltage Vdata from data voltage generative circuit 12a to maintenance capacitor C 1 with transistor Q12 and the 1st gate transistor Q1.On the other hand, during providing check with data voltage Vdata in, provide to make that to detect with transistor Q14 be that the 2nd of cut-off state is selected signal SL2, make detection become cut-off state with transistor Q14.
Behind the elapsed time t1, providing and making switch is that the 1st of cut-off state is selected signal SL1 and the 1st gating signal G1 with transistor Q12 and the 1st gate transistor Q1, finishes during the data of image element circuit 20 write.At this moment, provide to make and detect the 2nd selection signal SL2 that is respectively conducting state and cut-off state with transistor Q14 and light emitting control with transistor Q13.
Then, provide to each the commutation circuit 16a that selects circuit 16 from control circuit 17 that to make the 2nd gate transistor Q2 be the 2nd gating signal G2 of conducting state, the 2nd gate transistor Q2 becomes conducting state.In image element circuit 20,, flow through current value with respect to the drive current of using data voltage Vdata based on driving with the check of transistor Q11 action according to the conducting of the 2nd gate transistor Q2.At this moment, come self-driven drive current to use transistor Q14 and the 2nd gate transistor Q2 after testing, output to each the current detection circuit 19a that in the testing fixture 19 each image element circuit 20 that is positioned on the sweep trace Xn is provided with respectively with transistor Q11.
In addition, each image element circuit 20 to each sweep trace Y1-Yn carries out this action successively, outputs to each the current detection circuit 19a to each image element circuit 20 setting of each sweep trace Y1-Yn respectively.
In testing fixture 19, after the output current of current detection circuit 19 Jiang input that each image element circuit 20 of each sweep trace Y1-Yn is provided with carries out digital conversion, obtain output current value respectively, as detecting current value.In addition, the testing fixture 19 detection current value of the image element circuit 20 obtained of each current detection circuit 19a and relatively respectively to the setting current value of check with data voltage Vdata.In addition, testing fixture 19 temporary transient these comparative results of storage.Setting current value must be in advance through test or the theoretical value that obtains with check with the current value of data voltage Vdata from the output of image element circuit 20 standards.
Behind temporary transient this comparative result of storage, reuse the check data voltage Vdata of different value, OLED display 10 is carried out same check.Testing fixture 19 is with described the same, and the detection current value of the image element circuit 20 obtained of each current detection circuit 19a and to the setting current value of check with data voltage Vdata is relatively stored this comparative result respectively.
The offset Δ Vd that testing fixture 19 is obtained each image element circuit 20 to OLED display 10 outputs.The offset Δ Vd that each image element circuit 20 is obtained is stored among the storer 17a that is made of nonvolatile memory etc. that is built in the control circuit 17, and test mode finishes.In addition, in the present embodiment,, also can form the fuse of setting compensation value, cut off corresponding fuse according to the check result of testing fixture 19 though be stored among the storer 17a.
Therefore, can detect each image element circuit (each transistor that produces because of manufacturing variation; Especially drive and use transistor Q11) r operating characteristic difference.Therefore, can after the operating characteristic difference of each image element circuit 20 of compensation, make the briliancy of organic EL 21 relative data voltage Vdata of each image element circuit 20 certain.
In addition, testing fixture 19 can not be worked if judge image element circuit 20 detecting current value not under the situation in reference range, then can be it as the judgement material that could dispatch from the factory.
The following describes the feature of the OLED display 10 of described formation.
(1) in the present embodiment, switch is set and uses transistor Q14 with detecting in image element circuit 20 with transistor Q13.Under test mode, provide current value with respect to coming the self-driven drive current of using data current Vdata with the check of transistor Q11 with transistor Q14 to the current detection circuit 19a of pick-up unit 19 after testing.
Therefore, but the operating characteristic of each image element circuit 20 that the easy detection manufacturing variation produces.As a result, can before dispatching from the factory, check the substandard products of OLED display 10.
(2) in the present embodiment, among the storer 17a in being built in control circuit 17, storage testing fixture 19 is 20 that obtain to each image element circuit, compensation is based on the operating characteristic compensation of error value of manufacturing variation, promptly for the offset Δ Vd of the data voltage Vdata of relative setting briliancy.In addition, control circuit 17 comes the data voltage Vdata of organic EL 21 briliancy of each image element circuit 20 that compensation making obtains based on video data respectively with corresponding offset Δ Vd.
Therefore, each image element circuit 20 can provide current value relatively based on the same drive current of the data voltage Vdata of video data to organic EL 20, makes this organic EL luminous with same briliancy.Therefore, because each image element circuit 20 can compensate the operating characteristic that manufacturing variation causes by offset Δ Vd, so can be with discarded OLED display improvement was goods as substandard products in the past, so can improve the manufacturing qualification rate of organic display.
(3) in the present embodiment, utilize existing data lines X1-Xm to come to provide the detection drive current to current detection circuit 19a.Therefore, can suppress to increase circuit scale in order to detect electric current.
In addition, in the present embodiment, though the described driving that is connected in series also can drive with transistor Q11 and detect and use other element of insertion between the transistor Q14 with transistor (the 2nd transistor) Q11 and detection transistor (the 3rd transistor) Q14.At this moment, also can drive relatively to be connected in series to detect and use transistor Q14 with transistor Q11.
(embodiment 2)
The following describes embodiment 2.In described embodiment 1, testing fixture 19 is external device (ED)s, but in the present embodiment, constitutes testing fixture 19, as with the identical key element of each key element 11-17 of the OLED display 10 of described embodiment 1.Therefore, testing fixture 19 is built in the mobile electronic devices such as mobile phone that OLED display 10 is installed, PDA, personal computer with OLED display 10.
In addition, because be characterised in that and be built in the mobile electronic device, so for convenience of description, omit the part identical, the characterization part with embodiment 1.
Fig. 6 represents the circuit of the testing fixture 19 of present embodiment.
In Fig. 6, current detection circuit portion 31 is made of the current detection circuit 31a of quantity corresponding to data line X1-Xm.Each current detection circuit 31a is the relative next self-driven drive current of using data voltage Vdata with the check of transistor Q11 that provides from data line X1-Xm through commutation circuit 16a respectively of analog detection respectively.In addition, check is stored among the storer 17a of control circuit 17 in advance with video data.
Each current detection circuit 31a is connected on the corresponding A D transducer 32a of AD translation circuit portion 32.After the current value of the drive current that each AD transducer 32a will provide from data line X1-Xm is transformed to digital value, output to control circuit 17.
Behind temporary transient this comparative result of storage, the check of reusing different value comes OLED display 10 is carried out same check with data voltage Vdata.In addition, control circuit 17 is with described the same, relatively from the drive current current value that is provided by data line X1-Xm of each AD transducer 32a and the setting current value of relative check usefulness data voltage Vdata, stores comparative result respectively.
Below, the feature of the OLED display 10 of described formation is described.
(1) in the present embodiment, switch is set and uses transistor Q14 with detecting in image element circuit 20 with transistor Q13.Under test mode, provide with respect to coming the self-driven drive current current value of using data current Vdata with the check of transistor Q11 to control circuit 17 with transistor Q14 after testing.
In addition, control circuit 17 detects the operating characteristic of each image element circuit 20.Therefore, but do not use the just operating characteristic of each image element circuit 20 of causing of easy detection manufacturing variation of big testing fixture.Therefore, even control circuit 17 regularly or carry out test mode behind power connection, also can detect the operating characteristic of each image element circuit 20 that causes through annual variation, variation of ambient temperature.
(2) in the present embodiment, the operating characteristic compensation of error value that among the storer 17a in being built in control circuit 17, store that this control circuit 17 is 20 that obtain to each image element circuit, compensation causes based on manufacturing variation, through annual variation, variation of ambient temperature, promptly for the offset Δ Vd of the data voltage Vdata of relative setting briliancy.In addition, control circuit 17 comes the data voltage Vdata of organic EL 21 briliancy of each image element circuit 20 that compensation making obtains based on video data respectively with corresponding offset Δ Vd.
Therefore, even each image element circuit 20 through annual variation, variation of ambient temperature, also can provide current value relatively based on the same drive current of the data voltage Vdata of video data to organic EL 21, make this organic EL luminous with same briliancy.
(3) in the present embodiment, utilize existing data lines X1-Xm to come to provide the detection drive current to current detection circuit 19a.Therefore, can suppress to increase circuit scale in order to detect electric current.
(embodiment 3)
Below, illustrate that according to Fig. 7 and Fig. 8 the electronic equipment as the OLED display 10 of the electrooptical device of explanation in embodiment 1 and 2 is suitable for.OLED display 10 is applicable to various electronic equipments such as mobile model personal computer, mobile phone, digital cameras.
Fig. 7 is the stereographic map that expression mobile model personal computer constitutes.In Fig. 7, personal computer 50 possesses the main part 52 of configuration keyboard 5, the display unit 53 of the described OLED display 10 of use.At this moment, use the display unit 53 performances effect the same of OLED display 10 with described embodiment.As a result, personal computer 50 can realize that the few image of defective shows.
Fig. 8 is the stereographic map that the expression mobile phone constitutes.In Fig. 8, mobile phone 60 possesses a plurality of operating keys 61, receiving mouth 62, mouth piece 63, uses the display unit 64 of described OLED display 10.At this moment, use the display unit 64 performances effect the same of OLED display 10 with described embodiment.As a result, mobile phone 60 can realize that the few image of defective shows.
(embodiment 4)
In the present embodiment, use transistorized embodiment, image element circuit key diagram 9 shown in transistor with detecting for the dual-purpose switch.
Among Fig. 9, each image element circuit 20 has as the 2nd transistorized driving transistor Q20,1Q21 and the 2nd switch transistor Q22, light emitting control transistor Q23, reaches the maintenance capacitor C 1 as holding element.Drive and constitute by the P channel TFT with transistor Q20.The the 1st and the 2nd switch is made of the N channel TFT with transistor Q23 with transistor Q21, Q22 and light emitting control.
Drive with the drain electrode of transistor Q20 and be connected in the anode of described organic EL 21 through light emitting control with transistor Q23, source electrode is connected in power lead L1.The driving voltage Vdd that drives described organic EL 2 usefulness is provided to power lead L1.Be connected maintenance capacitor C 1 in described driving with between the grid of transistor Q20 and the power lead VL.
In addition, driving the grid of using transistor Q20 uses in the drain electrode of transistor Q2 1 through described the 1st switch.The 1st switch is connected in the drain electrode of the 2nd switch with transistor Q22 with the source electrode of transistor Q21.In addition, the 2nd switch is connected with the drain electrode of described driving with transistor Q20 with the drain electrode of transistor Q22.
The 2nd source electrode that drives with transistor Q22 is connected on the single line drive circuit 30 of data line drive circuit 12 through data line Xm.This single line drive circuit 30 is provided with data current generative circuit 40a.Data current generative circuit 40a is to image element circuit 20 outputting data signals I.Data line Xm is connected in data current generative circuit 40a through the 1st switch Q11, simultaneously, is connected in current detection circuit 30b through the 2nd switch Q12.
Connect the 1st subscan line Va and the 2nd subscan line Vb at the 1st and the 2nd switch respectively on the grid of transistor Q21, Q22.Come conducting the 1st and the 2nd switch transistor Q21, Q22 by the 1st sweep signal SL1 and the 2nd sweep signal SL2 from the 1st subscan line Va and the 2nd subscan line Vb.And, control the grid of light emitting control with transistor Q23 by led control signal Gp the 2nd.
During the 1st switch Q11, the 1st switch are used transistor Q22 conducting state with transistor Q21 and the 2nd switch, if data current generative circuit 40a is through data line Xm outputting data signals I, then provide data-signal I to image element circuit 20, accumulation is set the conducting state of driving transistors corresponding to the quantity of electric charge of data-signal I in keeping capacitor C 1.This is a write activity.
Then, if light emitting control makes light emitting control become the led control signal Gp of conducting state and become conducting state with transistor Q23 with transistor Q23 response, then provide corresponding to the magnitude of current that drives with transistor Q20 conducting state to organic EL 21.
On the contrary, under test mode,, keep keeping in the electric capacity replacing common data-signal corresponding to the quantity of electric charge of check with signal though the said write action is basic identical.Secondly, the 1st switch is that cut-off state is constant with transistor Q21, the 1st switch Q11 and light emitting control with transistor Q23, the 2nd switch is a conducting state with transistor Q22 and the 2nd switch Q12, detects the magnitude of current by driving transistors Q20 by current detection circuit 30b.
In embodiment 4, different with embodiment 1, one in two switching transistors (the 2nd switching transistor Q22) is also used as the detection transistor, replace resetting detecting and use transistor.
In addition, inventive embodiments is not limited to described embodiment, also can be as the enforcement of getting off.
In described embodiment 1, use the testing fixture 19 of checking the OLED display before dispatching from the factory to detect display.For mobile electronic devices such as mobile phone, PDA, notebook computer, when by the battery of charger charging mobile electronic device, also can in charging, check the OLED display that is loaded on the mobile electronic device by testing fixture 19.At this moment, essential built-in testing fixture in this charger.In addition, Once you begin charging then becomes test mode, carries out current detecting, checks each image element circuit 20.Thereby, for the OLED display on being loaded into mobile electronic device, can when each charging, compensate the operating characteristic that each image element circuit 20 causes through annual variation.
In described embodiment, whole image element circuits 20 of 19 pairs of display screen boards 11 of testing fixture are provided with current detection circuit 19a, but also can implement with the quantity identical with data line X1-Xm quantity as embodiment 2.At this moment, as embodiment 2,, carry out the inspection of each image element circuit on next sweep trace to being connected in after each image element circuit 20 on the sweep trace checks.
In described embodiment 1, the offset Vd that testing fixture 19 is obtained is stored among the storer 17a built-in in the control circuit 17, uses storer offset Vd among the storer 17a, forms new data voltage Vdata.
In described embodiment, as electronic circuit, be embodied as image element circuit 20, obtain optimum efficiency, but also can be embodied in the electronic circuit that drives organic EL 21 driven elements such as light-emitting component such as for example LED or FED etc. in addition.In addition, as driven element, RAM is magnetic.Therefore, also can be applicable to utilize the storage arrangement of this magnetic ram.
In described embodiment, when asking offset Δ Vd, test with data voltage Vdata with two different checks and to obtain.Also can use a check to test with data voltage Vdata or use check more than 3 to test to obtain and implement with data voltage Vdata.
In described embodiment, X1-Xm provides electric current to current detection circuit through data line, but also can in detecting, be provided with transistor Q13 detect special-purposely connect up, connecting up through these offers current detection circuit and implements.
In described embodiment, specialize organic EL 21 and be used as the driven element of image element circuit, but also can be embodied as inorganic EL element.That is, also can be applicable to the inorganic EL display that constitutes by inorganic EL element.
In described embodiment, image element circuit 20 is embodied as the voltage driven type image element circuit, but also can be applicable to the OLED display of current drive-type image element circuit.In addition, also the image element circuit of digital drive such as time-division, area gradient can be applied to OLED display.
Claims (15)
1. an electronic installation possesses a plurality of element circuits, and it is characterized in that: each of described a plurality of element circuits all comprises:
The 1st transistor;
The holding element that will keep as electric weight by the electric signal that described the 1st transistor provides;
Be controlled as the 2nd transistor of conducting state according to the electric weight that described holding element kept;
Driven element with respect to the magnitude of current of described conducting state is provided; With
The 3rd transistor that is connected with described the 2nd transistor series,
Each of described a plurality of element circuits all can be connected in the inspection portion that is used to detect the magnitude of current by described the 3rd transistor.
2. an electronic installation possesses a plurality of element circuits, it is characterized in that:
Each of described a plurality of element circuits all comprises:
The 1st transistor;
The holding element that will keep as electric weight by the electric signal that described the 1st transistor provides;
Be controlled as the 2nd transistor of conducting state according to the electric weight that keeps in the described holding element; With
Driven element with respect to the magnitude of current of described conducting state is provided,
Described the 1st transistor series of described the 2nd transistor AND gate connects,
Each of described a plurality of element circuits can be connected in the inspection portion that is used to detect the magnitude of current by described the 1st transistor.
3. electronic installation according to claim 1 and 2 is characterized in that:
Between described driven element and described the 2nd transistor, be connected the 4th transistor.
4. according to any described electronic installation in the claim 1 to 3, it is characterized in that:
Described driven element is a current driving element.
5. electronic installation according to claim 3 is characterized in that:
Carry out between detection period in described inspection portion, described at least the 4th transistor is a cut-off state.
6. electronic installation according to claim 1 is characterized in that:
In each of described a plurality of element circuits, described the 3rd transistor is set all.
7. according to any described electronic installation in the claim 1 to 6, it is characterized in that:
Possess memory circuit, storage is to being obtained by described inspection portion, the offset of the electric signal that is provided by described the 1st transistor.
8. according to any described electronic installation in the claim 1 to 7, it is characterized in that:
Described inspection portion detects and flows through the electric current that comprises described the 2nd transistorized current path,
Described current path does not comprise described driven element.
9. the driving method of an electronic installation, this electronic installation possesses: the 1st transistor; The holding element that will keep as electric weight by the electric signal that described the 1st transistor provides; Be set to the 2nd transistor of conducting state according to the electric weight that keeps in the described holding element; Driven element with respect to the magnitude of current of described conducting state is provided; The 3rd transistor with being connected with described the 2nd transistor series is characterized in that: possess:
Make described the 1st transistor turns, will remain on the 1st step in the described holding element based on the electric weight of described electric signal; With
Making described the 3rd transistor is conducting state, is electrically connected described the 2nd transistor and the inspection portion of detecting the magnitude of current through described the 3rd transistor, detects the 2nd step that flows through the magnitude of current that comprises described the 2nd transistor and the described the 3rd transistorized current path electric current.
10. electronic installation driving method according to claim 9 is characterized in that:
Described current path does not comprise described driven element.
11. an electrooptical device possesses a plurality of image element circuits corresponding to the cross part configuration of a plurality of sweep traces and a plurality of data lines, it is characterized in that:
Each of described a plurality of image element circuits all comprises:
The 1st transistor of conducting state is provided by the sweep signal that provides by corresponding sweep trace in described a plurality of sweep traces;
The holding element that the data-signal that will be reached by the data line of the described a plurality of data lines of correspondence provides by described the 1st transistor keeps as electric weight;
Be controlled as the 2nd transistor of conducting state according to the electric weight that keeps in the described holding element;
Photovalve with respect to the magnitude of current of described conducting state is provided; With
The 3rd transistor that is connected with described the 2nd transistor series,
Each of described a plurality of image element circuits all can be connected in the inspection portion of detecting the magnitude of current through described the 3rd transistor.
12. an electrooptical device possesses a plurality of image element circuits corresponding to the cross part configuration of a plurality of sweep traces and a plurality of data lines, it is characterized in that:
Each of described a plurality of image element circuits all comprises:
The 1st transistor of conducting state is provided by the sweep signal that provides by corresponding sweep trace in described a plurality of sweep traces;
The holding element that will keep as electric weight by the data-signal that respective data lines in described a plurality of data lines and described the 1st transistor provide;
Be controlled as the 2nd transistor that is connected with described the 1st transistor series of conducting state according to the electric weight that keeps in the described holding element; With the photovalve that provides with respect to the magnitude of current of described conducting state,
Each of described a plurality of image element circuits all can be connected in the inspection portion that is used to detect the magnitude of current by described the 1st transistor.
13. electrooptical device according to claim 11 is characterized in that:
Described the 3rd transistor can be connected in described inspection portion by the respective data lines in described a plurality of data lines.
14., it is characterized in that according to any described electrooptical device in the claim 11 to 13:
Described inspection portion comprises:
Detect the current detection circuit of the described magnitude of current;
According to the detected magnitude of current of described current detection circuit, obtain compensation value calculation circuit to the offset of described electric signal; With the memory circuit of storage to the described offset of described image element circuit,
Compensate described electric signal with described offset.
15. an electronic equipment is installed any described electrooptical device in the claim 11 to 14.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| JP2002097290 | 2002-03-29 | ||
| JP2002097290 | 2002-03-29 | ||
| JP2003085842 | 2003-03-26 | ||
| JP2003085842A JP4266682B2 (en) | 2002-03-29 | 2003-03-26 | Electronic device, driving method of electronic device, electro-optical device, and electronic apparatus |
Publications (2)
| Publication Number | Publication Date |
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| CN1448908A true CN1448908A (en) | 2003-10-15 |
| CN1253842C CN1253842C (en) | 2006-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031075940A Expired - Lifetime CN1253842C (en) | 2002-03-29 | 2003-03-28 | Electronic device, method for driving electronic device, electrooptical device and electronic apparatus |
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| Country | Link |
|---|---|
| JP (1) | JP4266682B2 (en) |
| KR (1) | KR100490196B1 (en) |
| CN (1) | CN1253842C (en) |
| TW (1) | TWI293748B (en) |
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| KR20120024267A (en) * | 2010-09-06 | 2012-03-14 | 삼성전기주식회사 | Organic light emitting diode driver |
| WO2015093100A1 (en) * | 2013-12-19 | 2015-06-25 | シャープ株式会社 | Display device and method for driving same |
| WO2017115713A1 (en) * | 2015-12-29 | 2017-07-06 | シャープ株式会社 | Pixel circuit, and display device and driving method therefor |
| US20180075798A1 (en) * | 2016-09-14 | 2018-03-15 | Apple Inc. | External Compensation for Display on Mobile Device |
| KR102584639B1 (en) * | 2018-11-21 | 2023-10-06 | 삼성디스플레이 주식회사 | Pixel circuit for display apparatus |
| KR20230102109A (en) | 2021-12-30 | 2023-07-07 | 엘지디스플레이 주식회사 | Gate driver and display device using the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59181882A (en) * | 1983-03-31 | 1984-10-16 | Toshiba Electric Equip Corp | Video display device |
| JPH10254410A (en) * | 1997-03-12 | 1998-09-25 | Pioneer Electron Corp | Organic electroluminescent display device, and driving method therefor |
| US6229508B1 (en) * | 1997-09-29 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
| JP2000187467A (en) * | 1998-12-24 | 2000-07-04 | Stanley Electric Co Ltd | Control device for lighting organic el element and its method |
| JP2003066865A (en) * | 2001-08-24 | 2003-03-05 | Matsushita Electric Ind Co Ltd | Display substrate, and method and device for its inspection |
| JP2003216100A (en) * | 2002-01-21 | 2003-07-30 | Matsushita Electric Ind Co Ltd | El (electroluminescent) display panel and el display device and its driving method and method for inspecting the same device and driver circuit for the same device |
-
2003
- 2003-03-26 JP JP2003085842A patent/JP4266682B2/en not_active Expired - Lifetime
- 2003-03-28 TW TW092107327A patent/TWI293748B/en not_active IP Right Cessation
- 2003-03-28 KR KR10-2003-0019409A patent/KR100490196B1/en active IP Right Grant
- 2003-03-28 CN CNB031075940A patent/CN1253842C/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| KR100490196B1 (en) | 2005-05-17 |
| TWI293748B (en) | 2008-02-21 |
| KR20030078741A (en) | 2003-10-08 |
| TW200402678A (en) | 2004-02-16 |
| CN1253842C (en) | 2006-04-26 |
| JP4266682B2 (en) | 2009-05-20 |
| JP2004004673A (en) | 2004-01-08 |
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