CN1437289A - Integration of continuous self-aligning semiconductor photoelectronic device and mode spot converter - Google Patents
Integration of continuous self-aligning semiconductor photoelectronic device and mode spot converter Download PDFInfo
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- CN1437289A CN1437289A CN 02103495 CN02103495A CN1437289A CN 1437289 A CN1437289 A CN 1437289A CN 02103495 CN02103495 CN 02103495 CN 02103495 A CN02103495 A CN 02103495A CN 1437289 A CN1437289 A CN 1437289A
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Abstract
The integration process of continuous self-aligning semiconductor photoelectronic device and mode spot converting includes the following steps: growing on substrate buffering InP layer, lower waveguide limiting InGaAsP layer, isolating InP layer, active area structure, thin upper limiting InGaAsP layer and protecting InP layer through organic chemical vapor deposition process, etching to form partial mode spot converter; growoing SiO2 through plasma vapor deposition process; photoetching active area and mode spot converter area; growing InGaAsP layer, P doped covering InP layer and protecting InGaAsP layer through selective metal organic vapor chemical deposition process, growing SiO2, photoetching mask heterojunction bar structure; growing p-n-p type InP current barrier layer through metal organic vapor chemical deposition process.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to integrated that semi-conductor optical amplifier, semiconductor laser, modulator, detector and super radiation light emitting tube etc. need be with all devices of monomode fiber coupling and spot-size converter.
Background technology
Along with the fast development of optical fiber communication, semiconductor photoelectronic device is in the status and the effect more and more important (and becoming the expensive main cause of optical communication) of optical communication field.But the light field pattern of common semiconductor photoelectronic device and not matching of monomode fiber light field pattern, make that the coupling efficiency of the two is very low, the coupling efficiency that improves the two becomes the difficult problem of optoelectronic module preparation, also be that optoelectronic module holds at high price, the expensive major reason of optical communication.The integrated of semiconductor module spot-size converter and semiconductor photoelectronic device is the effective way that improves the coupling efficiency of optical fiber and semiconductor device. at present, the mode of making pattern transducer has two kinds: the narrow and vertical waveguide gradient thickness of transversal waveguides width gradual change is thin.In adopting the narrow spot-size converter of transversal waveguides width gradual change, what adopt is that lithographic technique forms horizontal wedge, in order to make mode switch efficient height, wide necessary " the 0.35 μ m of the bar of its etching, this requirement to etching is very harsh, may before preparation BH stripe shape, form hardly, and three extensions etching before can cause the active area electric current to leak; In the spot-size converter that vertically the waveguide gradient thickness is thin, what adopt usually is to select regional epitaxy technology, utilize growth rate selecting the inside and outside difference in district, form the wedge shape of thickness in vertical direction, usually select growth spot-size converter and opto-electronic device to be integrated with dual mode: (1) in selecting growth course, opto-electronic device that will be integrated with it is partly used silicon dioxide (SiO
2) cover, only only select growth spot-size converter one side; But because the length of spot-size converter is shorter usually, and the opto-electronic device integrated with it is longer, just has the overwhelming majority to be SiO like this in the spot-size converter growth course
2Cover, very the quality of growth material is selected in influence, particularly at two kinds of device butted parts, is difficult to obtain high-quality material, the great like this coupling efficiency of two kinds of devices and the power output of device integral body of having influenced.And realize that fully spot-size converter is also very difficult with docking of opto-electronic device active area part.(2) when selecting growth spot-size converter (SSC), not opto-electronic device one side SiO
2Cover, but growth simultaneously, and with its last ducting layer as opto-electronic device, realized that like this opto-electronic device docks with the autoregistration between the SSC, but owing in selecting growth course, exist thickness mudulation effect and strain mudulation effect simultaneously, because opto-electronic device one side does not have SiO
2Cover, and the SiO of the both sides, SSC place that connect with its association
2Width is the wideest, therefore causes the strain differential maximum of opto-electronic device and SSC docking site, the two docking site to be difficult to obtain high crystal mass.
Summary of the invention
The objective of the invention is to, a kind of spot-size converter and opto-electronic device integrated approach are provided, adopt the selective epitaxy mode to realize making spot-size converter to realize that continuous autoregistration docks with opto-electronic device, avoid the sudden change of butted part strain and thickness, simultaneously high butted part crystal mass be can obtain, high mode switch efficient and big optical output power obtained.
The integrated approach of a kind of continuous autoregistration semiconductor photoelectronic device of the present invention and spot-size converter is characterized in that, comprises the steps:
1) utilizes the organic chemical vapor deposition technology of metal waveguide limiting layer, indium phosphorus separator, active area structure, thin layer InGaAsP upper limiting layer and indium phosphorus protective layer under grow successively on the indium phosphorus substrate indium phosphorus resilient coating, InGaAsP;
2) adopt common lithography corrosion technology with spot-size converter partial etching separator under the indium phosphorus;
3) using plasma gas phase deposition technology growthing silica deielectric-coating on entire chip;
4) adopt common lithography corrosion technology to etch the zone that active area and spot-size converter need be grown;
5) adopt hcl corrosion to fall the indium phosphorus protective layer of active area and the indium phosphorus separator in spot-size converter district;
6) utilize selection growing metal organic chemical vapor deposition technology growing indium-gallium-arsenic-phosphor layer successively, indium phosphorus cap rock and InGaAsP protective layer that P mixes;
7) using plasma gas phase deposition technology growthing silica 150nm;
8) adopt common lithography corrosion technology to etch the buried heterostructure strip structure;
9) adopt the organic chemical vapor deposition technology of metal growing p-type indium phosphorus, n type indium phosphorus, p type indium phosphorus current barrier layer successively;
10) employing hydrofluoric acid erodes the SiO2 on the bar, and adopt sulfuric acid: water: the mixed solution of hydrogen peroxide erodes the InGaAsP protective layer;
11) utilize the organic chemical vapor deposition technology growth of metal p type indium phosphorus cap rock and P
+-indium gallium arsenic contact layer;
12) make electrode;
13) cleavage, light-plated deielectric-coating on two end faces of device.
The deielectric-coating of growth can be that silicon dioxide, silicon nitride (SiN) also can be silicon oxynitrides (SiNO) in its step 3.
The deielectric-coating of growth can be that silicon dioxide, silicon nitride also can be silicon oxynitrides in its step 7.
In its step 9, can be p type indium phosphorus structure, also can carry out ion in these active area current barrier layer both sides and inject, to reduce leakage current.
Electrode preparation can utilize band glue lift-off technology or etching electrode pattern technology that the electrode of spot-size converter one side is removed in spot-size converter one side in its step 10, can adopt suitable electrode pattern and technology of preparing according to the needs of opto-electronic device in other opto-electronic device one sides integrated with it.
The light-plated deielectric-coating plates anti-reflection film, high-reflecting film etc. according to actual needs in its step 11.
Description of drawings
For further specifying technical characterictic of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 is opto-electronic device and epitaxy junction composition of module spot converter integrated device;
Fig. 2 is a structure chart behind SOA (EA)+photoetching corrosion of SSC;
Fig. 3 is continuous autoregistration opto-electronic device and the integrated lithography layout of SSC;
Fig. 4 is a structure chart behind SOA (EA)+SSC secondary photoetching corrosion;
Fig. 5 is a structure chart after SOA (EA)+SSC integrated device self-Aligned Epitaxial;
Fig. 6 (a) is the structure chart after distributed feedback laser (DFB) and SSC integrated device are carried out grating;
Fig. 6 (b) is that the DFB+SSC grating is buried the back structure chart;
Fig. 7 is the structure chart before absorption modulation and distributing feedback laser and autoregistration waveguide of SSC integrated device and the SSC growth;
Fig. 8 is the structure chart after absorption modulation and distributing feedback laser and autoregistration waveguide of SSC integrated device and the SSC growth.
Embodiment embodiment one: polarization-insensitive semiconductor optical amplifier SOA+SSC is integrated
Polarization-insensitive semiconductor optical amplifier and SSC that the present invention is prepared are integrated, and its preparation process comprises as follows:
1) separator, SOA active area, the last separator of InP and InGaAsP protective layer (as shown in Figure 1) under employing metal organic chemical vapor deposition technology (MOCVD) on n type indium phosphorus (InP) substrate grown InP resilient coating, InGaAsP (InGaAsP) lower waveguide layer, InP successively;
2) erode the InGaAsP protective layer of top layer with the mixed solution of sulfuric acid, hydrogen peroxide and water;
3) adopt common lithography corrosion technology photoetching corrosion SSC district separator under InP, as shown in Figure 2;
4) using plasma chemical deposition technique growth SiO
2150nm;
5) adopt as Fig. 3 photolithography plate, photoetching corrosion goes out Fig. 4 figure;
6) adopt selecting growing metal organic vapor phase deposition technology growth wavelength is that wavelength that the InP that mixes of 1.2 microns the InGaAsP that undopes, p and p mix is 1.2 microns InGaAsP, as shown in Figure 5;
7) erode SiO with hydrofluoric acid
2Figure cleans up, and then using plasma chemical vapour deposition technique growth SiO
2
8) photoetching corrosion goes out the BH strip structure;
9) adopt metal organic chemical vapor deposition technology growth p-InP, n-InP, p-InP current barrier layer structure
10) erode SiO with hydrofluoric acid
2, erode the InGaAsP. of top layer again with the mixed solution of sulfuric acid, hydrogen peroxide and water
11) adopt metal organic chemical vapor deposition technology growth p-InP cap rock and P
+-InGaAs (indium gallium arsenic) contact layer;
12) do electrode
13) at device two ends plating anti-reflection film, make its mode reflection rate reach 10
-4Below.
Form the integrated device of SOA and SSC like this.Embodiment two: electroabsorption modulator and SSC are integrated
This kind device is identical at electroabsorption modulator and SSC integration section and special case one, just adopts the making needs of ridge waveguide structure and electrode to fill the dielectric object of low-k according to the characteristics needs of electroabsorption modulator in the technology of back and adopts pattern electrodes.Embodiment three: distributed feedback laser (DFB) is integrated with SSC's:
This device is about the same at DFB and SSC integration section and special case one, just because DFB is a luminescent device, therefore only needs single-ended integrated with SSC.After finishing the SSC part of selecting to grow, must adopt following preparation process:
1) adopt the selective corrosion corrosion to fall successively top layer InGaAsP, InP;
2) partly make grating at DFB, shown in Fig. 6 (a);
3) comprehensive growth p-InP cap rock and InGaAsP protective layer on grating and SSC are shown in Fig. 6 (b);
4) afterwards with special case one preparation BH stripe shape waveguiding structure.
5) do pattern electrodes according to the high frequency characteristics needs in DFB one side;
6) at DFB one end plating high-reflecting film, at SSC one end plating anti-reflection film.Embodiment four: electro-absorption modulation Distributed Feedback Laser (EML) is integrated with SSC:
The preparation of this integrated device duplicates in embodiment three, just at grow the simultaneously absorbed layer of electroabsorption modulator of growth laser active area, go out SSC district (as shown in Figure 7) in electroabsorption modulator one end selective etching then, adopt to select the metal organic chemical vapor deposition technology of growth grow the simultaneously last ducting layer of laser, the last ducting layer and the SSC district (as shown in Figure 8) of electroabsorption modulator; Partly prepare grating at laser afterwards, and growth p-InP cap rock and InGaAsP protective layer are with preparation BH waveguiding structure (or growth p-InP and p
+-InGaAs contact layer prepares ridged waveguide structure); As required, prepare corresponding electrode figure and the filling of finishing the medium with low dielectric constant thing at DFB and electroabsorption modulator one side.At last at DFB one end plating high-reflecting film, at SSC one end plating anti-reflection film.Embodiment five: detector and SSC's is integrated:
Identical and the special case three of its preparation process.
Fig. 1 almost is the sharing structure figure of a general opto-electronic device and an extension of spot-size converter autoregistration integrated device.Promptly on InP substrate (substrate), grow successively active area (uptake zone of passive device) 4, InP separator 3 and the InGaAsP protective layer of n-InP resilient coating 1, InGaAsP lower waveguide layer 2, InP separator 3, active device.Here, lower waveguide layer 2 is for the some optical confinement layer is provided in general opto-electronic device one side, increase the some optical confinement factor of opto-electronic device sandwich layer, then can increase the thickness in SSC district in SSC one side, equally also can increase the some optical confinement factor, avoid light radiation and scattering loss the time too big via SSC; InP separator 3 mainly is to stop layer for selective etching provides; The 4th, the core layer of this structure, according to the layer structure different with the different choice of module spot converter integrated device, the active area of the two if SOA and DFB then grow is for EA and the detector uptake zone of then growing; Structure chart behind Fig. 2 SOA (EA)+photoetching corrosion of SSC, wherein digital indication and Fig. 1 are in full accord.Fig. 3 is a lithography layout of realizing SOA (EA)+when the SSC autoregistration is integrated, also is core of the present invention place.Because when metal organic chemical vapor deposition technology growth material, compound semiconductor is not grown on deielectric-coating, different medium film mask width can obtain the different growth thickness of growth district simultaneously, and for the InGaAsP material, can also obtain the material of different wave length simultaneously.According to these characteristics, we have designed the mask pattern of Fig. 3, at the active area (or uptake zone part of EA) of SOA, SiO
2The wideest, at SSC district, SiO
2Gradual change is narrow, and at opto-electronic device and SSC docking site, the SiO of both sides
2Width is a continually varying, and this has just guaranteed that strain, wavelength and the varied in thickness of docking site in the autoregistration process all are continuous, have effectively guaranteed the quality of docking site.And it is the wideest at opto-electronic device one side deielectric-coating, that is to say in selecting growth course, this regional InGaAsP layer is the thickest, in growth course, we adjust this district and are no strain regions, like this, the growth thickness in this district is less to the influence of crystal mass, and suitable thickness has guaranteed the enough big some optical confinement factor again simultaneously, and along with the attenuation of deielectric-coating thickness, the tensile strain of InGaAsP layer is cumulative, simultaneously, and the also attenuation of the thickness of material, formed the thin spot-size converter of gradient thickness so on the one hand, can guarantee again simultaneously the to grow crystal mass of each layer, be unlikely to since the crystal mass difference bring big non-radiative compound, the increase loss.1,2,3,4 indications are just the same with front Fig. 1, Fig. 2 among Fig. 4, and numeral 5 is meant SiO
2Deielectric-coating provides selective growth.This figure is used for the opto-electronic device that semi-conductor optical amplifier, electroabsorption modulator etc. need both-end and optical fiber coupling.Fig. 5 is such device and the spot-size converter structure chart after integrated, and wherein, 1,2,3,4 is identical with Fig. 4 indication with 5, and 6 are meant that butt joint is outer delays the spot-size converter part, is the core layer of spot-size converter, belongs to the thin spot-size converter of gradient thickness.7 are meant that butt joint is outer delays the opto-electronic device part, serves as upper limiting layer here, increases the some optical confinement factor, and the sandwich layer of butt joint assurance spot-size converter just in time docks with the sandwich layer of opto-electronic device like this, plays self aligned effect.The 8th, the InP cap rock, the pn that forms opto-electronic device ties.The 9th, the InGaAsP protective layer.Each item of digital indication of Fig. 6 (a) is identical with Fig. 5, and different is is that single-ended opto-electronic device and spot-size converter are integrated here, wherein dock the waveguide extension good after, on the DFB partial waveguide, made grating.Each item of digital indication of Fig. 6 (b) is identical with figure five.1,2,3 indications and front is identical among Fig. 7,4 is meant SiO here
2, in selective epitaxy, play the mask effect, 5 are meant the absorbed layer of electroabsorption modulator, 6 are meant the active layer of distributed feedback laser, 5 and the core layer of 6 o'clock these opto-electronic devices.Among Fig. 8, identical among 1-6 indication and Fig. 7, here, 7 are meant that butt joint is outer delays the spot-size converter part, is the core layer of spot-size converter, belongs to the thin spot-size converter of gradient thickness.8 indications are outer distributed feedback laser and the electroabsorption modulator parts delayed of butt joint, the last optics limiting layer of distributed feedback laser and electroabsorption modulator is served as in this part butt joint waveguide, increase the some optical confinement factor, the core layer that also guarantees simultaneously distributed feedback laser and electroabsorption modulator is just in time assisted mutually with the sandwich layer of spot-size converter and is connect, and plays self aligned effect.
The advantage of this invention is:
A) realized generally need to the opto-electronic device of Single-Mode Fiber Coupling and the collection of spot-size converter Become, improved coupling efficiency and the coupling tolerance of opto-electronic device, effectively reduce optoelectronic module Cost.
The mode of b) being grown simultaneously in upper waveguide section and the SSC core district of opto-electronic device is conducive to realize Opto-electronic device docks with the SSC district, can effectively avoid waveguide docking dislocation;
C) the upper waveguide section with opto-electronic device places the selection growth district, thereby has avoided photoelectron Butted part can be better controlled in the strain of device and SSC district butted part and the sudden change of thickness Crystal mass, simply realize efficiently docking of opto-electronic device and SSC. Reduce butted part Light loss.
D) SSC partly adopts twi guide structure, has effectively increased duct thickness, has increased optics
Restriction factor, thus light loss reduced, increase output (or the luminous power that receives).
Claims (6)
1, the integrated approach of a kind of continuous autoregistration semiconductor photoelectronic device and spot-size converter is characterized in that, comprises the steps:
1) utilizes the organic chemical vapor deposition technology of metal waveguide limiting layer, indium phosphorus separator, active area structure, thin layer InGaAsP upper limiting layer and indium phosphorus protective layer under grow successively on the indium phosphorus substrate indium phosphorus resilient coating, InGaAsP;
2) adopt common lithography corrosion technology with spot-size converter partial etching separator under the indium phosphorus;
3) using plasma gas phase deposition technology growthing silica deielectric-coating on entire chip;
4) adopt common lithography corrosion technology to etch the zone that active area and spot-size converter need be grown;
5) adopt hcl corrosion to fall the indium phosphorus protective layer of active area and the indium phosphorus separator in spot-size converter district;
6) utilize selection growing metal organic chemical vapor deposition technology growing indium-gallium-arsenic-phosphor layer successively, indium phosphorus cap rock and InGaAsP protective layer that P mixes;
7) using plasma gas phase deposition technology growthing silica 150nm;
8) adopt common lithography corrosion technology to etch the buried heterostructure strip structure;
9) adopt the organic chemical vapor deposition technology of metal growing p-type indium phosphorus, n type indium phosphorus, p type indium phosphorus current barrier layer successively;
10) employing hydrofluoric acid erodes the silicon dioxide on the bar, and adopt sulfuric acid: water: the mixed solution of hydrogen peroxide erodes the InGaAsP protective layer;
11) utilize the organic chemical vapor deposition technology growth of metal p type indium phosphorus cap rock and P
+-indium gallium arsenic contact layer;
12) make electrode;
13) cleavage, light-plated deielectric-coating on two end faces of device.
2, the integrated approach of continuous autoregistration semiconductor photoelectronic device according to claim 1 and spot-size converter is characterized in that, the deielectric-coating of growth can be that silicon dioxide, silicon nitride also can be silicon oxynitrides in its step 3.
3, the integrated approach of continuous autoregistration semiconductor photoelectronic device according to claim 1 and spot-size converter is characterized in that, the deielectric-coating of growth can be that silicon dioxide, silicon nitride also can be silicon oxynitrides in its step 7.
4, the integrated approach of continuous autoregistration semiconductor photoelectronic device according to claim 1 and spot-size converter, it is characterized in that, in its step 9, can be p type indium phosphorus structure, also can carry out ion in these active area current barrier layer both sides and inject, to reduce leakage current.
5, the integrated approach of continuous autoregistration semiconductor photoelectronic device according to claim 1 and spot-size converter, it is characterized in that, electrode preparation can utilize band glue lift-off technology or etching electrode pattern technology that the electrode of spot-size converter one side is removed in spot-size converter one side in its step 10, can adopt suitable electrode pattern and technology of preparing according to the needs of opto-electronic device in other opto-electronic device one sides integrated with it.
6, the integrated approach of continuous autoregistration semiconductor photoelectronic device according to claim 1 and spot-size converter is characterized in that the light-plated deielectric-coating plates anti-reflection film, high-reflecting film etc. according to actual needs in its step 11.
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| CN 02103495 CN1238937C (en) | 2002-02-06 | 2002-02-06 | Integration of continuous self-aligning semiconductor photoelectronic device and mode spot converter |
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|---|---|---|---|
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| CN1238937C CN1238937C (en) | 2006-01-25 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100349337C (en) * | 2004-09-30 | 2007-11-14 | 中国科学院半导体研究所 | Method for making semiconductor laser and spot-size converter by double waveguide technology |
| CN106785903A (en) * | 2015-11-19 | 2017-05-31 | 苏州旭创科技有限公司 | Resonator and the adiabatic laser using the resonator |
| CN106785902A (en) * | 2015-11-19 | 2017-05-31 | 苏州旭创科技有限公司 | Resonator and the adiabatic laser using the resonator |
| CN110632702A (en) * | 2019-10-23 | 2019-12-31 | 北京工业大学 | LNOI-based optical waveguide reverse wedge-shaped spot coupler and preparation method thereof |
| CN111244756A (en) * | 2020-03-12 | 2020-06-05 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
| US20200251610A1 (en) * | 2019-01-31 | 2020-08-06 | Exalos Ag | Amplified Stimulated Emission Semiconductor Source |
| CN117968840A (en) * | 2024-03-29 | 2024-05-03 | 赛丽科技(苏州)有限公司 | Photodetector and chip |
| CN117968840B (en) * | 2024-03-29 | 2024-06-07 | 赛丽科技(苏州)有限公司 | Photodetector and chip |
-
2002
- 2002-02-06 CN CN 02103495 patent/CN1238937C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100349337C (en) * | 2004-09-30 | 2007-11-14 | 中国科学院半导体研究所 | Method for making semiconductor laser and spot-size converter by double waveguide technology |
| CN106785903A (en) * | 2015-11-19 | 2017-05-31 | 苏州旭创科技有限公司 | Resonator and the adiabatic laser using the resonator |
| CN106785902A (en) * | 2015-11-19 | 2017-05-31 | 苏州旭创科技有限公司 | Resonator and the adiabatic laser using the resonator |
| US20200251610A1 (en) * | 2019-01-31 | 2020-08-06 | Exalos Ag | Amplified Stimulated Emission Semiconductor Source |
| US11791437B2 (en) * | 2019-01-31 | 2023-10-17 | Exalos Ag | Amplified spontaneous emission semiconductor source |
| CN110632702A (en) * | 2019-10-23 | 2019-12-31 | 北京工业大学 | LNOI-based optical waveguide reverse wedge-shaped spot coupler and preparation method thereof |
| CN111244756A (en) * | 2020-03-12 | 2020-06-05 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
| CN111244756B (en) * | 2020-03-12 | 2021-04-23 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
| CN117968840A (en) * | 2024-03-29 | 2024-05-03 | 赛丽科技(苏州)有限公司 | Photodetector and chip |
| CN117968840B (en) * | 2024-03-29 | 2024-06-07 | 赛丽科技(苏州)有限公司 | Photodetector and chip |
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|---|---|
| CN1238937C (en) | 2006-01-25 |
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