CN1630149A - Method for making electric absorption modulation DFB semiconductor laser - Google Patents
Method for making electric absorption modulation DFB semiconductor laser Download PDFInfo
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- CN1630149A CN1630149A CN 200310122343 CN200310122343A CN1630149A CN 1630149 A CN1630149 A CN 1630149A CN 200310122343 CN200310122343 CN 200310122343 CN 200310122343 A CN200310122343 A CN 200310122343A CN 1630149 A CN1630149 A CN 1630149A
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Abstract
A method for making electric absorption modulation distribution feedback semiconductor laser contains (1), growing InP buffer layer, lower wave-guide layer, quantum trap A, InP etching barrier layer and multi-quantum trap B in same epitaxy on InP substrate, (2), removing quantum trap B and remaining multi-quantum trap A by chemical wet process selective corrosion, (3), epitaxy growing upper wave-guide layer and InP cover layer on all area of laser area and modulation area, (4), selectively making optical grating in laser area by holographic exposure, all area epitaxy growing optical grating cover layer, 1.2Q etching barrier layer, P type InP light limiting layer and electric contact layer.
Description
Technical field
The invention provides a kind of manufacture method of semiconductor laser, be meant a kind of manufacture method of electro-absorption modulation distributed feedback semiconductor laser especially.
Background technology
Electro-absorption modulation distributed feedback semiconductor laser (EMLs) is a kind of main light signal generating element of (especially in the long distance line network) in the optical communication system.The invention relates to a kind of convenient and simple new producing method of this kind device, the main main points of implementing are: once outer Yanzhong, and the multi-quantum pit structure of the two kinds of optimizations of successively growing is respectively as the optical gain region and the light absorbing zone of modulator and laser; In order to reduce the band edge absorption loss of material, the top layer Multiple Quantum Well of modulator region is fallen in selective etching, can improve the luminous power that goes out of EMLs effectively.Manufacture method of the present invention has simple, and is reliable and stable, remarkable advantage with low cost.
In we, people have promoted communication system to develop to higher rate and bigger capacity direction to the demand of diversified extensive information residing information age, the birth of optical fiber communication and rapidly development complied with this demand just.In the long-distance backbone network of optical fiber communication, the invention of erbium-doped fiber amplifier has overcome the light loss problem of restricting signal transmission range always, and at present, dispersion loss becomes another kind of most important restraining factors.People are taking multiple mode to eliminate the influence of dispersion loss, for example adopt pmd controller etc. in transmission link, and another kind of crucial technology is to suppress the dynamic drift of optical transmitting set output wavelength, the chirp phenomenon that promptly it has often been said.Directly the distributed feedback semiconductor laser (Distributed Feedback Laser) of current-modulation is the most flat-footed light generation components and parts, but its intrinsic wavelength chirp factor is very big, and be difficult to eliminate, therefore replant device and can only be applied in short-range local area network (LAN) (as Fiber to the home etc.).For long distance applications, people adopt the method for external modulator can overcome the influence of warbling, in multiple optical modulator, the electroabsorption modulator of the quantum limit Rodney Stark effect in the based semiconductor multi-quantum pit structure has significant advantage and the most brilliant application prospect, this comes from many features that this device has, little as size, compact conformation, be easy to the semiconductor DFB monolithic integrated, operating voltage is low, power consumption is little, optical coupling between laser and the modulator is simple, the efficient height, the coupling of whole EMLs device and optical fiber is also more stable, has more high efficiency.At present, had multiple EMLs integrated technology, as direct butt joint coupled method, select regional epitaxy, same active area method, quantum well mixing method etc., these methods respectively have shortcoming, have the advantage that can optimize laser and modulator active area respectively as direct butt joint coupled method, but complex process, rate of finished products is low, the cost of manufacture height; The three kinds of methods in back have the simple relatively benefit of technology, but modulator region is difficult to obtain enough extinction ratios.
Summary of the invention
The objective of the invention is to, a kind of manufacture method of electro-absorption modulation distributed feedback semiconductor laser is provided, have simple and reliable process, lower-cost advantage.
Another purpose of the present invention is, a kind of manufacture method of electro-absorption modulation distributed feedback semiconductor laser is provided, and it can reduce the light scattering loss of butt joint interface, improves coupling efficiency, increases the luminous power that of whole EMLs device.
The manufacture method of a kind of electro-absorption modulation distributed feedback semiconductor laser of the present invention is characterized in that, comprises the steps:
1) on the InP substrate with successively grown InP resilient coating, lower waveguide layer, quantum well A, InP etching barrier layer and Multiple Quantum Well B in extension;
2) the Multiple Quantum Well B of employing wet chemical selective etching removing modulator region stays Multiple Quantum Well A;
3) gross area ducting layer and InP cap rock in laser district and modulator region epitaxial growth;
4) adopt holographic exposure to send out and make grating selectively in the laser district, gross area epitaxial growth grating is covered layer, 1.2Q etching barrier layer, p type InP light limiting layer and electric contacting layer then.
Multiple Quantum Well A wherein and Multiple Quantum Well B as the light absorption district and the laser optical gain region of modulator, adopt strain compensating structure respectively; Multiple Quantum Well A is the trap of totally 8 compressive strain, the base of 7 tensile strains, and the photoluminescence spectrum peak wavelength is 1.50 microns; Multiple Quantum Well B is built by 4 compressive strain traps and 3 tensile strains and forms, and its photoluminescence spectrum peak wavelength is 1.57 microns.
Wherein the last ducting layer of extension one deck 120 nanometers on modulator and the laser mainly acts on and is to make the waveguide that forms smooth and continuous between laser and the modulator, reduces the interface scattering loss, improves coupling efficiency.
Description of drawings
Fig. 1 to Fig. 6 is a flow chart of the present invention;
Fig. 6 is section of structure of the present invention simultaneously.
Embodiment
For obtained performance good, the EMLs device of simple and reliable process, we have proposed a kind of novel integrated approach, both can independent optimization laser and modulator, simple and reliable process simultaneously, cost is lower.The new producing method of the electro-absorption modulation distributed feedback semiconductor laser that is adopted among the present invention.The topmost characteristics of this method are, on the substrate slice that cleans up, the Multiple Quantum Well heap layer of large-area planar epitaxial growth laser and modulator, obtain high-quality active structure material easily, two kinds of quantum well can be optimized its multiple parameter respectively, comprise thickness, dependent variable and the periodicity etc. of trap and base layer.Then be etched away the top layer Multiple Quantum Well in the modulator region, can effectively reduce entering the absorbed loss of modulator region light field.Simultaneously the one deck of growing simultaneously on the Multiple Quantum Well of laser and modulator zone continuous on waveguide, reduce the light scattering loss of butt joint interface, improve coupling efficiency, increase the luminous power that of whole EMLs device.
See also Fig. 1 to Fig. 6, the manufacture method of electro-absorption modulation distributed feedback semiconductor laser of the present invention, concrete implementation step is as follows:
1, adopts low pressure metal organic source chemical vapor precipitation method (LP-MOCVD), on through strict (001) plane of mixing sulphur (S) n type indium phosphide (n-InP) substrate 1 of cleaning, the n-InP resilient coating 2 of mixing silicon (Si) of about 1 micron thickness of growing in turn, the lower waveguide layer 1.2Q 3 that does not mix up (the InGaAsP InGaAsP quaternary layer of thick about 50 nanometers, 1.2 microns of band gap wavelengths), the InGaAsP of Multiple Quantum Well A4, thin InP etching barrier layer 5, Multiple Quantum Well B6,30 nanometer thickness goes up ducting layer 7 and InP cap rock 8, structure is as shown in Figure 1;
2, adopt conventional exposure imaging technology, form laser district 9 and modulator region 10, the photoresist of modulator region is developed and removes, and InP cap rock 8 and the multi-quantum pit structure B6 in the modulator region 10 fallen in selective etching.Wherein, adopt hydrochloric acid (HCl): deionized water (H
2O) corrosion InP layer, sulfuric acid (H
2SO
3): hydrogen peroxide (H
2O
2): deionized water (H
2O) corrosion InGaAsP Multiple Quantum Well B6 layer, structure such as Fig. 2;
3, HCl: H
2O erodes the InP cap rock 8 in laser district 9 and the InP etching barrier layer 5 of modulator region; After strict the cleaning, with the InP cap rock 12 of ducting layer 11 (1.2Q of thick 50 nanometers) and 150 nanometer thickness in the epitaxial growth of LP-MOCVD large tracts of land, structure as shown in Figure 3;
4, photoetching corrosion removes the InP cap rock 11 in laser district, adopts holography method to make grating 13, about 240 nanometers of cycle, and about 1.55 microns of corresponding bragg wavelength, as shown in Figure 4;
5, after the cleaning, p-InP14 (thick 100 nanometers, the concentration 5 * 10 of supporting by the arm Zn with LP-MOCVD epitaxial growth successively
17/ cm
3), the p-InP light limiting layer 16 of 1.2Q layer 15,1.5 micron thickness of 20 nanometer thickness and the InGaAs contact layer 17 of 0.3 micron thickness, as shown in Figure 5;
6, adopt conventional ridge waveguide process corrosion to form shallow ridge waveguide structure 18 then, ion injects the isolation resistance that isolated area 19 improves between laser and the modulator, polyimides is as modulator pressure welding bed course 20, band glue lift-off technology is realized the laser and the modulator electrode pattern 21,22 of p face, thinning back side, evaporation n face electrode 23, and laser end face evaporation high-reflecting film 24, modulator end face evaporation anti-reflection film 25.Finish the making of entire device, structure such as schematic diagram 6.
Claims (3)
1, a kind of manufacture method of electro-absorption modulation distributed feedback semiconductor laser is characterized in that, comprises the steps:
1) on the InP substrate with successively grown InP resilient coating, lower waveguide layer, quantum well A, InP etching barrier layer and Multiple Quantum Well B in extension;
2) the Multiple Quantum Well B of employing wet chemical selective etching removing modulator region stays Multiple Quantum Well A;
3) gross area ducting layer and InP cap rock in laser district and modulator region epitaxial growth;
4) adopt holographic exposure to send out and make grating selectively in the laser district, gross area epitaxial growth grating is covered layer, 1.2Q etching barrier layer, p type InP light limiting layer and electric contacting layer then.
2, the manufacture method of electro-absorption modulation distributed feedback semiconductor laser according to claim 1, it is characterized in that, Multiple Quantum Well A wherein and Multiple Quantum Well B as the light absorption district and the laser optical gain region of modulator, adopt strain compensating structure respectively; Multiple Quantum Well A is the trap of totally 8 compressive strain, the base of 7 tensile strains, and the photoluminescence spectrum peak wavelength is 1.50 microns; Multiple Quantum Well B is built by 4 compressive strain traps and 3 tensile strains and forms, and its photoluminescence spectrum peak wavelength is 1.57 microns.
3, according to the manufacture method of claim 1 electro-absorption modulation distributed feedback semiconductor laser, it is characterized in that, the last ducting layer of extension one deck 120 nanometers on modulator and the laser wherein, main effect is to make the waveguide that forms smooth and continuous between laser and the modulator, reduce the interface scattering loss, improve coupling efficiency.
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|---|---|---|---|
| CN 200310122343 CN1630149A (en) | 2003-12-16 | 2003-12-16 | Method for making electric absorption modulation DFB semiconductor laser |
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|---|---|---|---|
| CN 200310122343 CN1630149A (en) | 2003-12-16 | 2003-12-16 | Method for making electric absorption modulation DFB semiconductor laser |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7476558B2 (en) | 2004-09-16 | 2009-01-13 | Institute Of Semiconductors, Chinese Academy Of Sciences | Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure |
| CN102162968A (en) * | 2010-12-08 | 2011-08-24 | 中国科学院半导体研究所 | Fabrication method of quantum well offset optical amplifier and electro-absorption modulator |
| CN105811241A (en) * | 2016-04-20 | 2016-07-27 | 太原理工大学 | Dual-feedback monolithic integrated laser chip |
| CN110718854A (en) * | 2019-09-29 | 2020-01-21 | 武汉云岭光电有限公司 | Wavelength tunable semiconductor laser |
| CN112821197A (en) * | 2020-12-30 | 2021-05-18 | 中国科学院半导体研究所 | Light emitting chip manufacturing method and light emitting chip |
| WO2022188581A1 (en) * | 2021-03-11 | 2022-09-15 | 青岛海信宽带多媒体技术有限公司 | Eml chip and optical module |
| WO2022222919A1 (en) * | 2021-04-20 | 2022-10-27 | 华为技术有限公司 | Electro-absorption modulation laser, optical transmission assembly, and optical terminal |
| CN115377799A (en) * | 2022-08-18 | 2022-11-22 | 武汉敏芯半导体股份有限公司 | Electro-absorption modulation laser chip |
-
2003
- 2003-12-16 CN CN 200310122343 patent/CN1630149A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7476558B2 (en) | 2004-09-16 | 2009-01-13 | Institute Of Semiconductors, Chinese Academy Of Sciences | Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure |
| CN102162968A (en) * | 2010-12-08 | 2011-08-24 | 中国科学院半导体研究所 | Fabrication method of quantum well offset optical amplifier and electro-absorption modulator |
| CN102162968B (en) * | 2010-12-08 | 2012-08-08 | 中国科学院半导体研究所 | Fabrication method of quantum well offset optical amplifier and electro-absorption modulator |
| CN105811241A (en) * | 2016-04-20 | 2016-07-27 | 太原理工大学 | Dual-feedback monolithic integrated laser chip |
| CN105811241B (en) * | 2016-04-20 | 2018-07-24 | 太原理工大学 | A kind of Monolithic Integrated Laser chip of double feedbacks |
| CN110718854A (en) * | 2019-09-29 | 2020-01-21 | 武汉云岭光电有限公司 | Wavelength tunable semiconductor laser |
| CN112821197A (en) * | 2020-12-30 | 2021-05-18 | 中国科学院半导体研究所 | Light emitting chip manufacturing method and light emitting chip |
| WO2022188581A1 (en) * | 2021-03-11 | 2022-09-15 | 青岛海信宽带多媒体技术有限公司 | Eml chip and optical module |
| WO2022222919A1 (en) * | 2021-04-20 | 2022-10-27 | 华为技术有限公司 | Electro-absorption modulation laser, optical transmission assembly, and optical terminal |
| CN115377799A (en) * | 2022-08-18 | 2022-11-22 | 武汉敏芯半导体股份有限公司 | Electro-absorption modulation laser chip |
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