CN1435728A - 利用间隔体技术的纳米尺寸压印模 - Google Patents
利用间隔体技术的纳米尺寸压印模 Download PDFInfo
- Publication number
- CN1435728A CN1435728A CN03103150.1A CN03103150A CN1435728A CN 1435728 A CN1435728 A CN 1435728A CN 03103150 A CN03103150 A CN 03103150A CN 1435728 A CN1435728 A CN 1435728A
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- China
- Prior art keywords
- making ide
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/009—Manufacturing the stamps or the moulds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
- B29C2059/023—Microembossing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/03—Processes for manufacturing substrate-free structures
- B81C2201/036—Hot embossing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/2457—Parallel ribs and/or grooves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/2457—Parallel ribs and/or grooves
- Y10T428/24579—Parallel ribs and/or grooves with particulate matter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24595—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness and varying density
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
微特征21和间隔体23的材料 |
氧化硅(SiO2) |
氮化硅(Si3N4) |
多晶硅 |
金属 |
氧氮化硅(Si2N2O) |
碳化硅(SiC) |
金刚石状的碳 |
硅化物 |
填料层31的材料 |
原硅酸四乙酯(TEOS) |
硼(B)搀杂的原硅酸四乙酯(BSG) |
磷(P)搀杂的原硅酸四乙酯(PSG) |
硼(B)和磷(P)搀杂的原硅酸四乙酯(BPSG) |
基底11的材料 |
玻璃 |
PYREX(商标) |
氧化硅(SiO2) |
氧化铝(Al2O3) |
磷化铟(InP) |
半导体材料 |
硅(Si) |
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/062952 | 2002-01-31 | ||
US10/062,952 US6743368B2 (en) | 2002-01-31 | 2002-01-31 | Nano-size imprinting stamp using spacer technique |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1435728A true CN1435728A (zh) | 2003-08-13 |
CN100367109C CN100367109C (zh) | 2008-02-06 |
Family
ID=22045931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031031501A Expired - Lifetime CN100367109C (zh) | 2002-01-31 | 2003-01-31 | 利用间隔体技术的纳米尺寸压印模 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6743368B2 (zh) |
EP (1) | EP1333324B1 (zh) |
JP (1) | JP4005927B2 (zh) |
CN (1) | CN100367109C (zh) |
DE (1) | DE60307336T2 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1314097C (zh) * | 2003-09-25 | 2007-05-02 | 茂德科技股份有限公司 | 隔离沟槽的侧壁掺杂方法 |
CN100541326C (zh) * | 2004-12-30 | 2009-09-16 | 中国科学院电工研究所 | 纳米级别图形的压印制造方法及其装置 |
CN101167176B (zh) * | 2005-02-28 | 2010-06-16 | 意法半导体股份有限公司 | 用于在标准电子元件之间实现纳米电路结构的方法和使用该方法获得的半导体器件 |
CN101036086B (zh) * | 2004-09-08 | 2011-01-19 | 尼尔技术有限责任公司 | 挠性纳米压印模板 |
CN1800974B (zh) * | 2004-12-23 | 2012-04-25 | Asml荷兰有限公司 | 压印光刻 |
CN102751378A (zh) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | 一种选择性扩散的实现方式 |
Families Citing this family (70)
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EP1257878B1 (en) * | 2000-01-21 | 2006-07-05 | Obducat Aktiebolag | A mold for nano imprinting |
US20040195202A1 (en) * | 2000-04-28 | 2004-10-07 | Alexander Pechenik | Method for making a nano-stamp and for forming, with the stamp, nano-size elements on a substrate |
EP1303793B1 (en) | 2000-07-17 | 2015-01-28 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
KR101031528B1 (ko) * | 2000-10-12 | 2011-04-27 | 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 | 실온 저압 마이크로- 및 나노- 임프린트 리소그래피용템플릿 |
US20050064344A1 (en) * | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
US20080160129A1 (en) | 2006-05-11 | 2008-07-03 | Molecular Imprints, Inc. | Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template |
US7179079B2 (en) * | 2002-07-08 | 2007-02-20 | Molecular Imprints, Inc. | Conforming template for patterning liquids disposed on substrates |
US6916511B2 (en) * | 2002-10-24 | 2005-07-12 | Hewlett-Packard Development Company, L.P. | Method of hardening a nano-imprinting stamp |
EP1443344A1 (en) * | 2003-01-29 | 2004-08-04 | Heptagon Oy | Manufacturing micro-structured elements |
US7256435B1 (en) * | 2003-06-02 | 2007-08-14 | Hewlett-Packard Development Company, L.P. | Multilevel imprint lithography |
CN100483672C (zh) * | 2003-09-29 | 2009-04-29 | 国际商业机器公司 | 用于在表面上形成多级结构的方法 |
US7060625B2 (en) * | 2004-01-27 | 2006-06-13 | Hewlett-Packard Development Company, L.P. | Imprint stamp |
US8148251B2 (en) * | 2004-01-30 | 2012-04-03 | Hewlett-Packard Development Company, L.P. | Forming a semiconductor device |
US7168936B2 (en) * | 2004-03-19 | 2007-01-30 | Intel Corporation | Light transparent substrate imprint tool with light blocking distal end |
US7140861B2 (en) * | 2004-04-27 | 2006-11-28 | Molecular Imprints, Inc. | Compliant hard template for UV imprinting |
US7785526B2 (en) * | 2004-07-20 | 2010-08-31 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
CN100555076C (zh) * | 2004-07-26 | 2009-10-28 | 鸿富锦精密工业(深圳)有限公司 | 用于纳米压印的压模及其制备方法 |
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US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
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US6365059B1 (en) * | 2000-04-28 | 2002-04-02 | Alexander Pechenik | Method for making a nano-stamp and for forming, with the stamp, nano-size elements on a substrate |
EP1303793B1 (en) * | 2000-07-17 | 2015-01-28 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
US6518194B2 (en) * | 2000-12-28 | 2003-02-11 | Thomas Andrew Winningham | Intermediate transfer layers for nanoscale pattern transfer and nanostructure formation |
US6432740B1 (en) * | 2001-06-28 | 2002-08-13 | Hewlett-Packard Company | Fabrication of molecular electronic circuit by imprinting |
-
2002
- 2002-01-31 US US10/062,952 patent/US6743368B2/en not_active Expired - Lifetime
-
2003
- 2003-01-28 JP JP2003018275A patent/JP4005927B2/ja not_active Expired - Lifetime
- 2003-01-31 EP EP03250633A patent/EP1333324B1/en not_active Expired - Lifetime
- 2003-01-31 DE DE60307336T patent/DE60307336T2/de not_active Expired - Lifetime
- 2003-01-31 CN CNB031031501A patent/CN100367109C/zh not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1314097C (zh) * | 2003-09-25 | 2007-05-02 | 茂德科技股份有限公司 | 隔离沟槽的侧壁掺杂方法 |
CN101036086B (zh) * | 2004-09-08 | 2011-01-19 | 尼尔技术有限责任公司 | 挠性纳米压印模板 |
CN1800974B (zh) * | 2004-12-23 | 2012-04-25 | Asml荷兰有限公司 | 压印光刻 |
CN102540707A (zh) * | 2004-12-23 | 2012-07-04 | Asml荷兰有限公司 | 压印光刻 |
CN102540707B (zh) * | 2004-12-23 | 2013-10-16 | Asml荷兰有限公司 | 压印光刻 |
US8571318B2 (en) | 2004-12-23 | 2013-10-29 | Asml Netherlands B.V. | Imprint lithography |
CN100541326C (zh) * | 2004-12-30 | 2009-09-16 | 中国科学院电工研究所 | 纳米级别图形的压印制造方法及其装置 |
CN101167176B (zh) * | 2005-02-28 | 2010-06-16 | 意法半导体股份有限公司 | 用于在标准电子元件之间实现纳米电路结构的方法和使用该方法获得的半导体器件 |
CN102751378A (zh) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | 一种选择性扩散的实现方式 |
Also Published As
Publication number | Publication date |
---|---|
DE60307336D1 (de) | 2006-09-21 |
JP4005927B2 (ja) | 2007-11-14 |
EP1333324A2 (en) | 2003-08-06 |
DE60307336T2 (de) | 2007-03-29 |
EP1333324B1 (en) | 2006-08-09 |
US20030141276A1 (en) | 2003-07-31 |
EP1333324A3 (en) | 2004-09-29 |
CN100367109C (zh) | 2008-02-06 |
US6743368B2 (en) | 2004-06-01 |
JP2004006643A (ja) | 2004-01-08 |
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