CN1390363A - 具有表面构造的发光二极管 - Google Patents
具有表面构造的发光二极管 Download PDFInfo
- Publication number
- CN1390363A CN1390363A CN00815582A CN00815582A CN1390363A CN 1390363 A CN1390363 A CN 1390363A CN 00815582 A CN00815582 A CN 00815582A CN 00815582 A CN00815582 A CN 00815582A CN 1390363 A CN1390363 A CN 1390363A
- Authority
- CN
- China
- Prior art keywords
- layer
- emitting diode
- light
- described light
- prismoid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 230000008878 coupling Effects 0.000 abstract description 17
- 238000010168 coupling process Methods 0.000 abstract description 17
- 238000005859 coupling reaction Methods 0.000 abstract description 17
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000005266 casting Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 210000004276 hyalin Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19943406.9 | 1999-09-10 | ||
DE19943406A DE19943406C2 (de) | 1999-09-10 | 1999-09-10 | Lichtemissionsdiode mit Oberflächenstrukturierung |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1390363A true CN1390363A (zh) | 2003-01-08 |
CN1263167C CN1263167C (zh) | 2006-07-05 |
Family
ID=7921550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008155828A Expired - Fee Related CN1263167C (zh) | 1999-09-10 | 2000-09-04 | 具有表面构造的发光二极管 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6649939B1 (zh) |
EP (2) | EP2290714B1 (zh) |
JP (1) | JP2003524884A (zh) |
CN (1) | CN1263167C (zh) |
DE (1) | DE19943406C2 (zh) |
TW (1) | TW495997B (zh) |
WO (1) | WO2001018883A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI667876B (zh) * | 2018-04-03 | 2019-08-01 | 武史 廖 | 利用光能產生電力的裝置 |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
JP3802424B2 (ja) * | 2002-01-15 | 2006-07-26 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
DE10229231B9 (de) * | 2002-06-28 | 2006-05-11 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Strahlung emittierenden und/oder empfangenden Halbleiterchips mit einer Strahlungsein- und/oder -auskoppel-Mikrostruktur |
DE10234977A1 (de) | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
DE10245628A1 (de) | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
KR20040087121A (ko) * | 2003-04-04 | 2004-10-13 | 삼성전기주식회사 | 질화 갈륨계 반도체 led 소자 |
CN100499184C (zh) | 2003-09-26 | 2009-06-10 | 奥斯兰姆奥普托半导体有限责任公司 | 发光薄膜半导体芯片 |
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
KR100631981B1 (ko) * | 2005-04-07 | 2006-10-11 | 삼성전기주식회사 | 수직구조 3족 질화물 발광 소자 및 그 제조 방법 |
US20070108459A1 (en) * | 2005-04-15 | 2007-05-17 | Enfocus Engineering Corp | Methods of Manufacturing Light Emitting Devices |
US20060237735A1 (en) * | 2005-04-22 | 2006-10-26 | Jean-Yves Naulin | High-efficiency light extraction structures and methods for solid-state lighting |
WO2007016363A2 (en) | 2005-07-28 | 2007-02-08 | Light Prescriptions Innovators, Llc | Free-form lenticular optical elements and their application to condensers and headlamps |
JP2009503793A (ja) | 2005-07-28 | 2009-01-29 | ライト プレスクリプションズ イノベーターズ エルエルシー | バックライトおよびフロントライト用のエテンデュ保存型照明光学部品 |
KR100706944B1 (ko) * | 2005-10-17 | 2007-04-12 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
JP2009515344A (ja) * | 2005-11-04 | 2009-04-09 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高い光抽出効率の発光ダイオード(led) |
US7525126B2 (en) * | 2006-05-02 | 2009-04-28 | 3M Innovative Properties Company | LED package with converging optical element |
US20070257270A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with wedge-shaped optical element |
US20070257271A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with encapsulated converging optical element |
US20070258241A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with non-bonded converging optical element |
US7390117B2 (en) * | 2006-05-02 | 2008-06-24 | 3M Innovative Properties Company | LED package with compound converging optical element |
US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
TW200817804A (en) * | 2006-06-12 | 2008-04-16 | 3M Innovative Properties Co | LED device with re-emitting semiconductor construction and converging optical element |
US7952110B2 (en) * | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
US7902542B2 (en) * | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
US7952109B2 (en) * | 2006-07-10 | 2011-05-31 | Alcatel-Lucent Usa Inc. | Light-emitting crystal structures |
WO2008008994A2 (en) | 2006-07-14 | 2008-01-17 | Light Prescriptions Innovators, Llc | Brightness-enhancing film |
US20080012034A1 (en) * | 2006-07-17 | 2008-01-17 | 3M Innovative Properties Company | Led package with converging extractor |
WO2008022064A2 (en) * | 2006-08-10 | 2008-02-21 | Light Prescriptions Innovators, Llc | Led light recycling device |
WO2008022065A2 (en) | 2006-08-11 | 2008-02-21 | Light Prescriptions Innovators, Llc | Led luminance-enhancement and color-mixing by rotationally multiplexed beam-combining |
SG140481A1 (en) * | 2006-08-22 | 2008-03-28 | Agency Science Tech & Res | A method for fabricating micro and nano structures |
JP2008066554A (ja) | 2006-09-08 | 2008-03-21 | Sanken Electric Co Ltd | 半導体発光素子 |
US9318327B2 (en) | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
KR101122678B1 (ko) | 2010-01-11 | 2012-03-09 | 고려대학교 산학협력단 | 반사 방지막을 구비한 반도체 발광소자 및 그 제조방법 |
US9337387B2 (en) * | 2011-06-15 | 2016-05-10 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
US10319881B2 (en) | 2011-06-15 | 2019-06-11 | Sensor Electronic Technology, Inc. | Device including transparent layer with profiled surface for improved extraction |
US9741899B2 (en) | 2011-06-15 | 2017-08-22 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
US10522714B2 (en) | 2011-06-15 | 2019-12-31 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
US10461221B2 (en) | 2016-01-18 | 2019-10-29 | Sensor Electronic Technology, Inc. | Semiconductor device with improved light propagation |
US20170353641A1 (en) * | 2016-06-07 | 2017-12-07 | Intel Corporation | Illuminator with engineered illumination pattern |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4864370A (en) * | 1987-11-16 | 1989-09-05 | Motorola, Inc. | Electrical contact for an LED |
EP0405757A3 (en) * | 1989-06-27 | 1991-01-30 | Hewlett-Packard Company | High efficiency light-emitting diode |
US5008718A (en) * | 1989-12-18 | 1991-04-16 | Fletcher Robert M | Light-emitting diode with an electrically conductive window |
JPH0442582A (ja) * | 1990-06-08 | 1992-02-13 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
JP3260358B2 (ja) * | 1990-08-20 | 2002-02-25 | 株式会社東芝 | 半導体発光装置 |
JPH04264781A (ja) * | 1991-02-20 | 1992-09-21 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
JP3333219B2 (ja) * | 1991-11-15 | 2002-10-15 | 株式会社東芝 | 化合物半導体発光素子 |
US5309001A (en) | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
US5233204A (en) * | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
DE4218806A1 (de) * | 1992-06-06 | 1993-12-09 | Telefunken Microelectron | Mesa-Lumineszenz-Halbleiterelement |
JPH06334218A (ja) * | 1993-05-24 | 1994-12-02 | Matsushita Electric Ind Co Ltd | 発光ダイオード素子 |
DE19509262C2 (de) | 1995-03-15 | 2001-11-29 | Siemens Ag | Halbleiterbauelement mit Kunststoffumhüllung und Verfahren zu dessen Herstellung |
DE19537544A1 (de) * | 1995-10-09 | 1997-04-10 | Telefunken Microelectron | Lumineszenzdiode mit verbesserter Lichtausbeute |
US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
JP2907170B2 (ja) * | 1996-12-28 | 1999-06-21 | サンケン電気株式会社 | 半導体発光素子 |
US6091085A (en) | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
-
1999
- 1999-09-10 DE DE19943406A patent/DE19943406C2/de not_active Expired - Fee Related
-
2000
- 2000-09-04 EP EP10192433.0A patent/EP2290714B1/de not_active Expired - Lifetime
- 2000-09-04 CN CNB008155828A patent/CN1263167C/zh not_active Expired - Fee Related
- 2000-09-04 WO PCT/DE2000/003027 patent/WO2001018883A1/de active Application Filing
- 2000-09-04 US US10/070,584 patent/US6649939B1/en not_active Expired - Lifetime
- 2000-09-04 EP EP00974281.8A patent/EP1210737B1/de not_active Expired - Lifetime
- 2000-09-04 JP JP2001522605A patent/JP2003524884A/ja active Pending
- 2000-09-08 TW TW089118425A patent/TW495997B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI667876B (zh) * | 2018-04-03 | 2019-08-01 | 武史 廖 | 利用光能產生電力的裝置 |
Also Published As
Publication number | Publication date |
---|---|
EP2290714B1 (de) | 2015-01-28 |
JP2003524884A (ja) | 2003-08-19 |
DE19943406A1 (de) | 2001-04-12 |
EP1210737A1 (de) | 2002-06-05 |
US6649939B1 (en) | 2003-11-18 |
TW495997B (en) | 2002-07-21 |
DE19943406C2 (de) | 2001-07-19 |
CN1263167C (zh) | 2006-07-05 |
WO2001018883A1 (de) | 2001-03-15 |
EP1210737B1 (de) | 2019-02-27 |
EP2290714A1 (de) | 2011-03-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1390363A (zh) | 具有表面构造的发光二极管 | |
US7135709B1 (en) | Surface structured light-emitting diode with improved current coupling | |
US5233204A (en) | Light-emitting diode with a thick transparent layer | |
CN100594624C (zh) | 形成发光器件布线的方法及用于安装发光器件的设备 | |
KR100745229B1 (ko) | 발광다이오드구조체및그의형성방법 | |
KR101188634B1 (ko) | 발광 다이오드 구조체 및 그 제조 방법 | |
CN103270611B (zh) | 发光二极管及其制造方法 | |
JP3912219B2 (ja) | 窒化物半導体発光素子 | |
TWI383427B (zh) | 光電技術用之半導體晶片及其製造方法 | |
US20060071225A1 (en) | Light emitting diodes exhibiting both high reflectivity and high light extraction | |
WO2017052886A1 (en) | Self-aligned floating mirror for contact vias | |
CN1276522C (zh) | 产生辐射的半导体芯片和发光二极管 | |
GB2304230A (en) | Light emitting diodes | |
US20140167092A1 (en) | Optoelectronic assembly and method for producing an optoelectronic assembly | |
WO2016118428A1 (en) | High efficiency leds and methods of manufacturing | |
JP4564234B2 (ja) | 半導体発光素子 | |
CN216213514U (zh) | 发光二极管芯片、发光模块及发光或显示装置 | |
CN114342094A (zh) | 发光二极管及制备方法和显示面板 | |
WO1999031738A2 (en) | Aiii-nitride channeled led | |
CN113921676A (zh) | 发光二极管及发光模块 | |
TWI512807B (zh) | 半導體元件結構與其分離方法 | |
CN214428644U (zh) | 台阶处双层保护的led芯片结构 | |
CN113921672A (zh) | 发光二极管及发光模块 | |
CN112490303A (zh) | n面出光为特定几何图形的AlGaInP薄膜LED芯片结构 | |
CN217740553U (zh) | 一种发光二极管芯片及其封装结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: OSRAM OPTO SEMICONDUCTORS GMBH + CO. OHG Free format text: FORMER NAME: SIEMENS AG |
|
CP01 | Change in the name or title of a patent holder |
Address after: Regensburg, Germany Patentee after: Osram Opto Semiconductors GmbH & Co. OHG Address before: Regensburg, Germany Patentee before: Siemens AG |
|
ASS | Succession or assignment of patent right |
Owner name: OSRAM AG Free format text: FORMER OWNER: OSRAM OPTO SEMICONDUCTORS GMBH + CO. OHG Effective date: 20111229 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111229 Address after: Munich, Germany Patentee after: Patra Patent Treuhand Address before: Regensburg, Germany Patentee before: Osram Opto Semiconductors GmbH & Co. OHG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060705 Termination date: 20190904 |
|
CF01 | Termination of patent right due to non-payment of annual fee |