CN1383185A - Process for preparing self-supporting gallium nitride substrate by laser stripping method - Google Patents
Process for preparing self-supporting gallium nitride substrate by laser stripping method Download PDFInfo
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- CN1383185A CN1383185A CN02113085.XA CN02113085A CN1383185A CN 1383185 A CN1383185 A CN 1383185A CN 02113085 A CN02113085 A CN 02113085A CN 1383185 A CN1383185 A CN 1383185A
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- gan
- substrate
- sapphire
- laser
- gallium nitride
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 35
- 239000010980 sapphire Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract 2
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 241000931526 Acer campestre Species 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000001464 adherent effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001657 homoepitaxy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
This invention relates to a method of preparing self-support gallium nitride substrate adopting an excimer laser in which the corresponding energy of the laser wavelength is smaller than sapphire bandgap yet larger than that of GaN. The laser irradiates GaN at the interface of sapphire and gallium nitride through the sapphire substrate which is then heated and corroded with weak acid to separate GaN with sapphire to get GaN self-support substrate or adhere the surface of gallium nitride to a substrate then to irradiate with laser to separate GaN with sapphire, further to separate the substrate adherent layers by heating.
Description
One, technical field
The present invention relates to adopt laser lift-off technique stripping gallium nitride (GaN) on the Sapphire Substrate to obtain the method and the technology of free from flaw self-supporting GaN substrate.
Two, technical background
III-V group nitride material (claiming the GaN sill again) based on GaN and InGaN, AlGaN alloy material is the novel semiconductor material of extremely paying attention in the world in recent years, the direct band gap of its 1.9-6.2eV continuous variable, excellent physics, chemical stability, high saturated electron drift velocity, superior functions such as high disruptive field intensity and high heat conductance make it become the most preferably material of short wavelength's semiconductor photoelectronic device and high frequency, high pressure, the preparation of high temperature microelectronic component.
Because the restriction of the physical property of GaN own, the growth of GaN body monocrystalline has very big difficulty, as yet practicability not.Yet, carry out homoepitaxy with the GaN substrate and obtain III group-III nitride thin-film material and but demonstrated extremely superior performance, therefore with the low-dislocation-density substrate carry out GaN homoepitaxy be improve III nitride epitaxial layers quality than good method.
At present, large tracts of land GaN substrate all is to go up vapor phase growth GaN thick film in foreign substrate (as sapphire, SiC, Si etc.) usually, obtains after then former foreign substrate being separated.Wherein growing GaN is the most general on Sapphire Substrate, and quality is also the highest.In order to obtain self-supporting GaN substrate, must remove Sapphire Substrate.Because sapphire is extremely stable, is difficult to adopt chemical corrosion method.General method is a mechanical grinding, but because of sapphire is very hard, not only will consume a large amount of diamond abrasives, and cost is very high and speed is extremely slow.Adopt the method for laser irradiation, utilize laser that the boundary zone heating of GaN thick film and substrate is made it fusing, thereby obtain the GaN substrate of self-supporting.The advantage of laser-stripping method is that the time is fast, and Sapphire Substrate is recyclable.
In the present invention, we adopt the laser scanning irradiation technique, on Sapphire Substrate the GaN film are stripped down, and obtain self-supporting free from flaw GaN substrate.
Three, technology contents
The present invention seeks to: with the laser scanning irradiation technique GaN film is stripped down from Sapphire Substrate, obtain free from flaw self-supporting GaN substrate.
Technical solution of the present invention is: the method that adopts laser irradiation, utilize laser to see through Sapphire Substrate and make at the interface to the heating of the boundary zone of GaN thick film and Sapphire Substrate that GaN decomposes, be higher than heating or weak hcl corrosion more than the Ga fusing point, just GaN and sapphire can be separated, thus the GaN substrate of acquisition self-supporting.
Further improvement of the present invention is: earlier gallium nitride surface is bonded on the substrate, as substrate, carries out laser irradiation as silicon chip again, after GaN and sapphire are separated, with heating means the substrate adhesive linkage is separated again.
Mechanism of the present invention and technical characterstic are:
The pairing energy of optical maser wavelength is less than the sapphire band-gap energy in laser lift-off technique, but greater than the band-gap energy of GaN.When the laser penetration Sapphire Substrate arrived sapphire/GaN interface, GaN absorbed its energy, and following decomposition takes place.
Being higher than heating or weak hcl corrosion more than the Ga fusing point, just GaN and sapphire can be separated, thereby obtain GaN self-supporting substrate.
Four, description of drawings
Fig. 1 is the present invention's laser lift-off GaN technology schematic diagram on the Sapphire Substrate
Fig. 2 for sapphire-GaN in the laser lift-off process of the present invention at the interface pressure produce schematic diagram, Sappire is a sapphire.
Five, embodiment
The present invention program mainly comprises following step:
1, adopts outside gas phase epitaxy of metal organic compound (MOCVD), molecular beam epitaxy (MBE), the hydride gas phase
Prolong (HVPE) or additive method growing GaN film on Sapphire Substrate.
2, make backing material with Si (111).Silicon wafer is attached on the GaN, forms sapphire/GaN/Si structure.
3, select suitable laser, sapphire is passed in the laser vertical incident that will have certain energy density, irradiation indigo plant
Jewel/GaN interface.The pairing energy of optical maser wavelength is less than the sapphire band-gap energy, still greater than GaN's
Band-gap energy.As adopt Lambda Physik LPX 205i KrF ultraviolet light excimer laser (wavelength
248nm, the wide 38ns of pulse), laser energy density is from 200~5000mJ/cm
2Change.
4, in the following heating sapphire/GaN/Si structure of the temperature that is higher than metal Ga (29 ℃), or with the corruption of weak HCl solution
Erosion sapphire/GaN metal at the interface, Sapphire Substrate just can be stripped from.Obtain the GaN/Si knot
Structure.
5,500 ℃ are heated the GaN/Si structures, or the GaN/Si structure is put into suitable organic solvent, and silicon chip is removed.
Can obtain self-supporting GaN substrate.
Utilize the laser irradiation lift-off technology, we have successfully obtained free from flaw self-supporting GaN substrate.Before and after laser lift-off, not bigger variation such as the structure of GaN and optical property.Carefully control the laser lift-off condition, we can realize the peeling off of GaN film of large tracts of land (diameter>2 inch).
Claims (2)
1, laser lift-off prepares the method for self-standing gan substrate, it is characterized in that adopting excimer laser: the pairing energy of optical maser wavelength is less than the sapphire band-gap energy, but band-gap energy greater than GaN, laser irradiation sees through Sapphire Substrate, irradiation sapphire-gallium nitride GaN at the interface, GaN and sapphire are separated in heating or weak acid corrosion then, obtain GaN self-supporting substrate.
2, the method that is prepared the self-standing gan substrate by the described laser lift-off of claim 1 is characterized in that earlier gallium nitride surface being bonded on the substrate, carries out laser irradiation again, after GaN and sapphire are separated, with heating means the substrate adhesive linkage is separated again.
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Cited By (17)
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CN1329955C (en) * | 2004-07-21 | 2007-08-01 | 南京大学 | Method of preparing high quality non-polar GaN self-support substrate |
CN100533666C (en) * | 2008-03-19 | 2009-08-26 | 厦门大学 | Preparation of gallium nitride based epitaxial film |
WO2010051677A1 (en) * | 2008-11-07 | 2010-05-14 | 东莞市中镓半导体科技有限公司 | METHOD FOR STRIPPING GaN FROM SAPPHIRE SUBSTRATE WITHOUT DAMAGE BY USING SOLID-STATE LASER |
CN101962804A (en) * | 2010-10-30 | 2011-02-02 | 北京大学 | Epitaxial material stress control-based GaN thick film self-separation method |
CN101086083B (en) * | 2007-06-08 | 2011-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing group III nitride substrate |
CN102148139A (en) * | 2010-12-31 | 2011-08-10 | 东莞市中镓半导体科技有限公司 | Improved method for eliminating residual stress of GaN epitaxial wafer by laser quasi-stripping |
CN101263580B (en) * | 2003-06-12 | 2011-08-24 | 国际商业机器公司 | Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same |
CN101783279B (en) * | 2009-01-15 | 2011-11-16 | 展晶科技(深圳)有限公司 | Method for spearing two materials |
CN104716023A (en) * | 2009-08-26 | 2015-06-17 | 首尔伟傲世有限公司 | Method for manufacturing a semiconductor substrate and method for manufacturing a light-emitting device |
CN105006446A (en) * | 2015-06-25 | 2015-10-28 | 武汉大学 | Method based on femtosecond laser technology for peeling GaN film and sapphire substrate |
CN105590841A (en) * | 2014-11-14 | 2016-05-18 | 东莞市中镓半导体科技有限公司 | Crack-free laser lift-off method for preparing GaN self-supporting substrate |
CN105720141A (en) * | 2016-03-11 | 2016-06-29 | 东莞市中镓半导体科技有限公司 | Non-destructive GaN substrate laser stripping method |
CN107221496A (en) * | 2017-05-26 | 2017-09-29 | 东莞市中镓半导体科技有限公司 | A kind of surface treatment method after nitride material laser lift-off |
CN109887878A (en) * | 2019-02-28 | 2019-06-14 | 保定中创燕园半导体科技有限公司 | A method of recycling graphical sapphire substrate |
CN111128688A (en) * | 2019-12-31 | 2020-05-08 | 东莞市中镓半导体科技有限公司 | Method for manufacturing n-type gallium nitride self-supporting substrate |
CN112151355A (en) * | 2019-06-28 | 2020-12-29 | 东莞市中镓半导体科技有限公司 | Method for manufacturing gallium nitride self-supporting substrate |
CN114094439A (en) * | 2021-10-22 | 2022-02-25 | 南京邮电大学 | Gallium nitride surface emitting laser based on silicon nitride photonic crystal and preparation method thereof |
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CN101263580B (en) * | 2003-06-12 | 2011-08-24 | 国际商业机器公司 | Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same |
CN1329955C (en) * | 2004-07-21 | 2007-08-01 | 南京大学 | Method of preparing high quality non-polar GaN self-support substrate |
CN101086083B (en) * | 2007-06-08 | 2011-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing group III nitride substrate |
CN100533666C (en) * | 2008-03-19 | 2009-08-26 | 厦门大学 | Preparation of gallium nitride based epitaxial film |
WO2010051677A1 (en) * | 2008-11-07 | 2010-05-14 | 东莞市中镓半导体科技有限公司 | METHOD FOR STRIPPING GaN FROM SAPPHIRE SUBSTRATE WITHOUT DAMAGE BY USING SOLID-STATE LASER |
CN101740331B (en) * | 2008-11-07 | 2012-01-25 | 东莞市中镓半导体科技有限公司 | Method for nondestructively peeling GaN and sapphire substrate by solid laser |
CN101783279B (en) * | 2009-01-15 | 2011-11-16 | 展晶科技(深圳)有限公司 | Method for spearing two materials |
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CN101962804A (en) * | 2010-10-30 | 2011-02-02 | 北京大学 | Epitaxial material stress control-based GaN thick film self-separation method |
CN101962804B (en) * | 2010-10-30 | 2012-05-02 | 北京大学 | Epitaxial material stress control-based GaN thick film self-separation method |
CN102148139B (en) * | 2010-12-31 | 2012-06-13 | 东莞市中镓半导体科技有限公司 | Improved method for eliminating residual stress of GaN epitaxial wafer by laser quasi-stripping |
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