CN1176483C - Process for preparing self-supporting gallium nitride substrate by laser stripping method - Google Patents
Process for preparing self-supporting gallium nitride substrate by laser stripping method Download PDFInfo
- Publication number
- CN1176483C CN1176483C CNB02113085XA CN02113085A CN1176483C CN 1176483 C CN1176483 C CN 1176483C CN B02113085X A CNB02113085X A CN B02113085XA CN 02113085 A CN02113085 A CN 02113085A CN 1176483 C CN1176483 C CN 1176483C
- Authority
- CN
- China
- Prior art keywords
- gan
- sapphire
- substrate
- laser
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to a method for preparing a self support gallium nitride substrate by laser stripping. An excimer laser is adopted. The energy corresponding to a laser wavelength is smaller than the band gap energy of sapphire, but larger than the band gap energy of GaN. The laser irradiation penetrates a sapphire substrate and irradiates GaN at a sapphire-gallium nitride interface; afterwards, the heating or the weak acid corrosion is carried out; the GaN is separated from the sapphire, and a GaN self support substrate is obtained; particularly, a gallium nitride surface is firstly stuck on a base sheet, and then, the laser irradiation is carried out; after the GaN is separated from the sapphire, base sheet bonding layers are separated by a heating method.
Description
One, technical field
The present invention relates to adopt laser lift-off technique stripping gallium nitride (GaN) on the Sapphire Substrate to obtain the method and the technology of free from flaw self-supporting GaN substrate.
Two, technical background
III-V group nitride material (claiming the GaN sill again) based on GaN and InGaN, AlGaN alloy material is the novel semiconductor material of extremely paying attention in the world in recent years, the direct band gap of its 1.9-6.2eV continuous variable, excellent physics, chemical stability, high saturated electron drift velocity, superior functions such as high disruptive field intensity and high heat conductance make it become the most preferably material of short wavelength's semiconductor photoelectronic device and high frequency, high pressure, the preparation of high temperature microelectronic component.
Because the restriction of the physical property of GaN own, the growth of GaN body monocrystalline has very big difficulty, as yet practicability not.Yet, carry out homoepitaxy with the GaN substrate and obtain III group-III nitride thin-film material and but demonstrated extremely superior performance, therefore with the low-dislocation-density substrate carry out GaN homoepitaxy be improve III nitride epitaxial layers quality than good method.
At present, large tracts of land GaN substrate all is to go up vapor phase growth GaN thick film in foreign substrate (as sapphire, SiC, Si etc.) usually, obtains after then former foreign substrate being separated.Wherein growing GaN is the most general on Sapphire Substrate, and quality is also the highest.In order to obtain self-supporting GaN substrate, must remove Sapphire Substrate.Because sapphire is extremely stable, is difficult to adopt chemical corrosion method.General method is a mechanical grinding, but because of sapphire is very hard, not only will consume a large amount of diamond abrasives, and cost is very high and speed is extremely slow.Adopt the method for laser irradiation, utilize laser that the boundary zone heating of GaN thick film and substrate is made it fusing, thereby obtain the GaN substrate of self-supporting.The advantage of laser-stripping method is that the time is fast, and Sapphire Substrate is recyclable.
In the present invention, we adopt the laser scanning irradiation technique, on Sapphire Substrate the GaN film are stripped down, and obtain self-supporting free from flaw GaN substrate.
Three, technology contents
The present invention seeks to: with the laser scanning irradiation technique GaN film is stripped down from Sapphire Substrate, obtain free from flaw self-supporting GaN substrate.
Technical solution of the present invention is: the method that adopts laser irradiation, utilize laser to see through Sapphire Substrate and make at the interface to the heating of the boundary zone of GaN thick film and Sapphire Substrate that GaN decomposes, be higher than heating or weak hcl corrosion more than the Ga fusing point, just GaN and sapphire can be separated, thus the GaN substrate of acquisition self-supporting.
Further improvement of the present invention is: earlier gallium nitride surface is bonded on the substrate, as substrate, carries out laser irradiation as silicon chip again, after GaN and sapphire are separated, with heating means the substrate adhesive linkage is separated again.
Mechanism of the present invention and technical characterstic are:
The pairing energy of optical maser wavelength is less than the sapphire band-gap energy in laser lift-off technique, but greater than the band-gap energy of GaN.When the laser penetration Sapphire Substrate arrived sapphire/GaN interface, GaN absorbed its energy, and following decomposition takes place.
Being higher than heating or weak hcl corrosion more than the Ga fusing point, just GaN and sapphire can be separated, thereby obtain GaN self-supporting substrate.
Four, description of drawings
Fig. 1 is the present invention's laser lift-off GaN technology schematic diagram on the Sapphire Substrate
Fig. 2 for sapphire-GaN in the laser lift-off process of the present invention at the interface pressure produce schematic diagram, Sappire is a sapphire.
Five, embodiment
The present invention program mainly comprises following step:
1, adopts gas phase epitaxy of metal organic compound (MOCVD), molecular beam epitaxy (MBE), hydride gas-phase epitaxy (HVPE) or additive method growing GaN film on Sapphire Substrate.
2, make backing material with Si (111).Silicon wafer is attached on the GaN, forms sapphire/GaN/Si structure.
3, select suitable laser, sapphire is passed in the laser vertical incident that will have certain energy density, irradiation sapphire/GaN interface.The pairing energy of optical maser wavelength is less than the sapphire band-gap energy, but greater than the band-gap energy of GaN.As adopting Lambda Physik LPX 205i KrF ultraviolet light excimer laser (wavelength 248nm, the wide 38ns of pulse), laser energy density is from 200~5000mJ/cm
2Change.
4, in the following heating sapphire/GaN/Si structure of the temperature that is higher than metal Ga (29 ℃), or with weak HCl solution corrosion sapphire/GaN metal at the interface, Sapphire Substrate just can be stripped from.Obtain the GaN/Si structure.
5,500 ℃ are heated the GaN/Si structures, or the GaN/Si structure is put into suitable organic solvent, and silicon chip is removed.Can obtain self-supporting GaN substrate.
Utilize the laser irradiation lift-off technology, we have successfully obtained free from flaw self-supporting GaN substrate.Before and after laser lift-off, not bigger variation such as the structure of GaN and optical property.Carefully control the laser lift-off condition, we can realize the peeling off of GaN film of large tracts of land (diameter>2 inch).
Claims (1)
1, laser lift-off prepares the method for self-standing gan substrate, it is characterized in that earlier gallium nitride surface being bonded on the substrate, carry out laser irradiation again, after GaN and sapphire separated, with heating means the substrate adhesive linkage is separated again, institute's employing excimer laser such as following: the pairing energy of optical maser wavelength is less than the sapphire band-gap energy, but band-gap energy greater than GaN, laser irradiation sees through Sapphire Substrate, irradiation sapphire-gallium nitride GaN at the interface, GaN and sapphire are separated in heating or weak acid corrosion then, obtain GaN self-supporting substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB02113085XA CN1176483C (en) | 2002-05-31 | 2002-05-31 | Process for preparing self-supporting gallium nitride substrate by laser stripping method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB02113085XA CN1176483C (en) | 2002-05-31 | 2002-05-31 | Process for preparing self-supporting gallium nitride substrate by laser stripping method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1383185A CN1383185A (en) | 2002-12-04 |
CN1176483C true CN1176483C (en) | 2004-11-17 |
Family
ID=4742430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB02113085XA Expired - Fee Related CN1176483C (en) | 2002-05-31 | 2002-05-31 | Process for preparing self-supporting gallium nitride substrate by laser stripping method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1176483C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100359636C (en) * | 2005-11-04 | 2008-01-02 | 南京大学 | Improved laser stripped method of preparing self-supporting gallium nitride substrate |
CN100389503C (en) * | 2005-01-07 | 2008-05-21 | 北京大学 | Method for preparing LED chip with separate crystal grain vertical structure |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7494896B2 (en) * | 2003-06-12 | 2009-02-24 | International Business Machines Corporation | Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer |
CN1329955C (en) * | 2004-07-21 | 2007-08-01 | 南京大学 | Method of preparing high quality non-polar GaN self-support substrate |
CN101086083B (en) * | 2007-06-08 | 2011-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing group III nitride substrate |
CN100533666C (en) * | 2008-03-19 | 2009-08-26 | 厦门大学 | Preparation of gallium nitride based epitaxial film |
CN101740331B (en) * | 2008-11-07 | 2012-01-25 | 东莞市中镓半导体科技有限公司 | Method for nondestructively peeling GaN and sapphire substrate by solid laser |
CN101783279B (en) * | 2009-01-15 | 2011-11-16 | 展晶科技(深圳)有限公司 | Method for spearing two materials |
CN104658890B (en) * | 2009-08-26 | 2018-01-05 | 首尔伟傲世有限公司 | Manufacture the method for semiconductor base and the method for manufacture light-emitting device |
CN101962804B (en) * | 2010-10-30 | 2012-05-02 | 北京大学 | Epitaxial material stress control-based GaN thick film self-separation method |
CN102148139B (en) * | 2010-12-31 | 2012-06-13 | 东莞市中镓半导体科技有限公司 | Improved method for eliminating residual stress of GaN epitaxial wafer by laser quasi-stripping |
CN105590841A (en) * | 2014-11-14 | 2016-05-18 | 东莞市中镓半导体科技有限公司 | Crack-free laser lift-off method for preparing GaN self-supporting substrate |
CN105006446A (en) * | 2015-06-25 | 2015-10-28 | 武汉大学 | Method based on femtosecond laser technology for peeling GaN film and sapphire substrate |
CN105720141B (en) * | 2016-03-11 | 2019-01-29 | 东莞市中镓半导体科技有限公司 | A kind of undamaged GaN substrate laser-stripping method |
CN107221496B (en) * | 2017-05-26 | 2020-04-24 | 东莞市中镓半导体科技有限公司 | Surface treatment method for nitride material after laser stripping |
CN109887878A (en) * | 2019-02-28 | 2019-06-14 | 保定中创燕园半导体科技有限公司 | A method of recycling graphical sapphire substrate |
CN112151355B (en) * | 2019-06-28 | 2022-08-23 | 东莞市中镓半导体科技有限公司 | Method for manufacturing gallium nitride self-supporting substrate |
CN111128688B (en) * | 2019-12-31 | 2022-09-27 | 东莞市中镓半导体科技有限公司 | Method for manufacturing n-type gallium nitride self-supporting substrate |
CN114094439B (en) * | 2021-10-22 | 2023-12-12 | 南京邮电大学 | Gallium nitride surface emitting laser based on silicon nitride photonic crystal and preparation method thereof |
-
2002
- 2002-05-31 CN CNB02113085XA patent/CN1176483C/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100389503C (en) * | 2005-01-07 | 2008-05-21 | 北京大学 | Method for preparing LED chip with separate crystal grain vertical structure |
CN100359636C (en) * | 2005-11-04 | 2008-01-02 | 南京大学 | Improved laser stripped method of preparing self-supporting gallium nitride substrate |
Also Published As
Publication number | Publication date |
---|---|
CN1383185A (en) | 2002-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1176483C (en) | Process for preparing self-supporting gallium nitride substrate by laser stripping method | |
CN100359636C (en) | Improved laser stripped method of preparing self-supporting gallium nitride substrate | |
CN107170668B (en) | Preparation method of self-supporting gallium nitride | |
TWI240434B (en) | Method to produce semiconductor-chips | |
US10347794B2 (en) | Gallium nitride wafer substrate for solid state lighting devices and associated systems | |
CN1140915C (en) | Technology for obtaining large-area high-quality GaN self-supporting substrate | |
US7071087B2 (en) | Technique to grow high quality ZnSe epitaxy layer on Si substrate | |
US20110124139A1 (en) | Method for manufacturing free-standing substrate and free-standing light-emitting device | |
CN100505165C (en) | A method for preparing the gallium nitride monocrystal substrate | |
US20110079766A1 (en) | Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate | |
US8148246B2 (en) | Method for separating semiconductor layer from substrate | |
US11626491B2 (en) | Indium nitride nanopillar epitaxial wafer grown on aluminum foil substrate and preparation method of indium nitride nanopillar epitaxial wafer | |
EP2037013B1 (en) | Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate | |
JP2003249453A (en) | Manufacturing method for gallium nitride substrate | |
WO2008011979A1 (en) | Deposition of group iii-nitrides on ge | |
WO2018107713A1 (en) | Inn nanocolumn epitaxial wafer grown on si substrate and fabrication method for wafer | |
US6461944B2 (en) | Methods for growth of relatively large step-free SiC crystal surfaces | |
EP2802002B1 (en) | Method for the manufacturing of a substrate having a hetero-structure | |
CN1174470C (en) | Transverse epitaxial growth process of high-quality gallium nitride film | |
CN111430218B (en) | Method for preparing GaN single crystal substrate through self-separation | |
CN100344006C (en) | Method for developing structure of LED device of InGaN/GaN quantum trap in M faces | |
JP2011162407A (en) | Nitride semiconductor crystal, method for producing nitride semiconductor self-support substrate, and nitride semiconductor device | |
CN108231545B (en) | InN nano-column epitaxial wafer grown on copper foil substrate and preparation method thereof | |
CN102031560A (en) | Method for preparing large-size GaN self-support substrate | |
CN108342773A (en) | Grow the method for gallium nitride semiconductor layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |