CN1378292A - High efficiency packaged photoelectronic element and its packaging method - Google Patents
High efficiency packaged photoelectronic element and its packaging method Download PDFInfo
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- CN1378292A CN1378292A CN01110421A CN01110421A CN1378292A CN 1378292 A CN1378292 A CN 1378292A CN 01110421 A CN01110421 A CN 01110421A CN 01110421 A CN01110421 A CN 01110421A CN 1378292 A CN1378292 A CN 1378292A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
A high-efficiency packaged photoelectric element can raise luminous efficient and output power of the photoelectric element, and includes crystal grains of photoelectric element, transparent material layer, light reflecting layer and carrier seat for crystal grains. The crystal grains have the first and the second electrode electrically connected with carrier seat of crystal grains and with the conductive electrode in another polarity respectively. The packaging method includes forming the carrier seat of crystal grains, setting up the light reflecting layer, forming the transparent material layer, fixing the photoelectric element crystal grains and electrically connecting the first and second electrodes with crystal grains carrier seat and with the conductive electrode in another polarity separately.
Description
The invention belongs to photoelectric cell and processing method thereof, particularly a kind of high efficiency packaged photoelectronic element and method for packing thereof.
Light-emittingdiode of a great variety, of many uses.According to different packaged types, be divided into plug-in type light-emittingdiode (Through-Hold LED), surface mounted light-emitting diode (Surface-MountedDevice LED) and pat chip type light-emittingdiode (Flip-Chip LED).
As shown in Figure 1, the known packaging LED that comprises crystal grain and crystal grain load bearing seat 30, its crystal grain is mainly epitaxial structure 10 is formed on the substrate 20, and the zone at epitaxial structure 10 places comprises N type semiconductor district, active layers and p type semiconductor layer at least.Because the progress of process technique; so after epitaxial structure 10 is finished; in order to increase the luminosity of light-emittingdiode; the substrate 20 of common meeting to be adopted as transparency carrier; so; the light that light-emittingdiode is launched just can not absorbed by opaque substrate, and light-emittingdiode crystal grain then can become the luminous crystal grain of positive and negative, therefore can increase the luminous efficiency of light-emittingdiode.
As shown in Figure 1, the crystal grain load bearing seat 30 of light-emittingdiode crystal grain is connected to form first electrode of light-emittingdiode crystal grain with lead frame (LeadFrame), printed circuit board (PCB) (PC Board) or metal pedestal (Header) as the carrier in when encapsulation and with the substrate 20 of light-emittingdiode crystal grain usually, and to be mode with elargol, conducting resinl or eutectic bond be fixed on the crystal grain load bearing seat 30 the solid crystal face 40 between light-emittingdiode crystal grain and the crystal grain load bearing seat 30.Second electrode 50 on the light-emittingdiode crystal grain then links to the other end 35 of lead frame in addition.Last light-emittingdiode crystal grain can be connected to power supply respectively with crystal grain load bearing seat 30 and lead frame 35, makes that the epitaxial structure 10 of light-emittingdiode crystal grain is luminous.
As shown in Figure 2, identical with the above-mentioned practice when the substrate 70 of light-emittingdiode crystal grain is insulating material, the solid crystal face 95 between light-emittingdiode crystal grain and the crystal grain load bearing seat 100 is to be fixed on the crystal grain load bearing seat 100 with elargol.First electrode 80 on the light-emittingdiode crystal grain and second electrode 90 then link to crystal grain load bearing seat 100 and lead frame 105 respectively.At last, light-emittingdiode crystal grain can be connected to power supply respectively by crystal grain load bearing seat 100 and lead frame 105, so that the epitaxial structure 60 of light-emittingdiode crystal grain is luminous.
Yet, because light-emittingdiode crystal grain is that direct gluing is on the crystal grain load bearing seat.Because the solid crystal face between known crystal grain and the crystal grain load bearing seat can absorb the light that is produced by light-emittingdiode crystal grain.Therefore, though the substrate on the light-emittingdiode crystal grain is replaced by transparency carrier, but be absorbed by solid crystal face via the most of meeting of light that transparency carrier is launched, therefore, reduced the luminous efficiency of light-emittingdiode, and can't give play to fully and use transparency carrier to make light-emittingdiode crystal grain produce the luminous advantage in positive and negative.
The purpose of this invention is to provide a kind of high efficiency packaged photoelectronic element and method for packing thereof of guaranteeing that the photoelectric cell positive and negative are luminous, improving photoelectric cell luminous efficiency and power output.
High efficiency packaged photoelectronic element of the present invention comprise photoelectric cell grain crystalline substance, fixed light electric device crystal grain transparent material layer, incident light is changed into catoptrical reflection layer and crystal grain load bearing seat; Photoelectric cell crystal grain is provided with first electrode and second electrode that electrically connects with crystal grain load bearing seat and lead frame.
High efficiency packaged photoelectronic element method for packing of the present invention comprises the following steps:
Moulding crystal grain load bearing seat
Reflection layer is set
Be provided with in the crystal grain load bearing seat incident light is changed into catoptrical reflection layer;
The shaping transparent material layer
Formation is covered in the transparent material layer of reflection layer;
Fixed light electric device crystal grain
Photoelectric cell crystal grain is fixed on the transparent material layer;
Electrically connect
First utmost point of photoelectric cell crystal grain and second utmost point are electrically connected with the conductive electrode of crystal grain load bearing seat and another polarity respectively.
Wherein:
The crystal grain load bearing seat is the plug-in type lead frame.
The crystal grain load bearing seat is a printed circuit board (PCB).
The crystal grain load bearing seat is a metal pedestal.
Photoelectric cell crystal grain comprises the conductive, transparent substrate at least and is formed at epitaxial structure on the conductive, transparent substrate; First electrode and second electrode lay respectively on the plurality of distinct epitaxial layer in conductive, transparent substrate and the epitaxial structure on it.
Transparent material layer is the conductive transparent material layer that forms with indium tin oxide layer (ITO), zinc oxide film (ZnO), cadmium tin oxide layer (CTO), indium-zinc oxide layer (IZO) or nickel oxide layer (NiO).
Photoelectric cell crystal grain comprises the insulation transparent substrate at least and is formed at epitaxial structure on the insulation transparent substrate; First electrode and second electrode lay respectively on the interior plurality of distinct epitaxial layer of epitaxial structure on it.
Be convexly equipped with on the reflection layer and avoid the intragranular hemisphere face projection that is of reverberation reflected back.
Be arranged with on the reflection layer and avoid the intragranular hemisphere face depression that is of reverberation reflected back.
Reflection layer is for avoiding the intragranular optical grating construction of reverberation reflected back.
A kind of high efficiency packaged photoelectronic element method for packing, it comprises the following steps:
Moulding crystal grain load bearing seat
Shaping ground floor transparent material layer
Form the ground floor transparent material layer in crystal grain load bearing seat depression surface;
Reflection layer is set
On the ground floor transparent material layer, be provided with incident light is changed into catoptrical reflection layer;
Shaping second layer transparent material layer
Formation is covered in the second layer transparent material layer on the reflection layer;
Fixed light electric device crystal grain
Photoelectric cell crystal grain is fixed on the second layer transparent material layer;
Electrically connect
First utmost point of photoelectric cell crystal grain and second utmost point are electrically connected with the conductive electrode of crystal grain load bearing seat and another polarity respectively.
The crystal grain load bearing seat of moulding is the plug-in type lead frame.
The crystal grain load bearing seat of moulding is a printed circuit board (PCB).
The crystal grain load bearing seat of moulding is a metal pedestal.
Being fixed in photoelectric cell crystal grain on the transparent material layer comprises the conductive, transparent substrate at least and is formed at epitaxial structure on the conductive, transparent substrate; First electrode and second electrode lay respectively on the plurality of distinct epitaxial layer in conductive, transparent substrate and the epitaxial structure on it.
Be covered in the conductive transparent material layer of transparent material layer for forming of reflection layer with indium tin oxide layer (ITO), zinc oxide film (ZnO), cadmium tin oxide layer (CTO), indium-zinc oxide layer (IZO) or nickel oxide layer (NiO).
Photoelectric cell crystal grain comprises the insulation transparent substrate at least and is formed at epitaxial structure on the insulation transparent substrate; First electrode and second electrode lay respectively on the interior plurality of distinct epitaxial layer of epitaxial structure on it.
Be arranged to be convexly equipped with on the reflection layer on the crystal grain load bearing seat and avoid the intragranular hemisphere face projection that is of reverberation reflected back.
Be arranged to be arranged with on the reflection layer on the crystal grain load bearing seat and avoid the intragranular hemisphere face depression that is of reverberation reflected back.
Be arranged at reflection layer on the crystal grain load bearing seat for avoiding the intragranular optical grating construction of reverberation reflected back.
Since high efficiency packaged photoelectronic element of the present invention comprise photoelectric cell grain crystalline substance, fixed light electric device crystal grain transparent material layer, incident light is changed into catoptrical reflection layer and crystal grain load bearing seat; Photoelectric cell crystal grain is provided with first and second electrode that electrically connects with crystal grain load bearing seat and another polarity conductive electrode; Method for packing comprises moulding crystal grain load bearing seat, reflection layer is set, shaping transparent material layer, fixed light electric device crystal grain and first and second utmost point of photoelectric cell crystal grain electrically connected with the conductive electrode of crystal grain load bearing seat and another polarity respectively.Connect power supply with high efficiency packaged photoelectronic element of the present invention, the light of photoelectric cell crystal grain output is incident to reflection layer through transparent material layer, so that light is all reflected away, the light that makes photoelectric cell produce can directly not absorbed by solid crystal face, can guarantee that the luminous efficiency of photoelectric cell reaches the delivery efficiency of significantly improving photoelectric cell; Guarantee that the photoelectric cell positive and negative are luminous, improve photoelectric cell luminous efficiency and power output, thereby reach purpose of the present invention.
Fig. 1, be known packaging LED structural representation cutaway view.
Fig. 2, for known packaging LED structural representation cutaway view (substrate is an insulating material).
Fig. 3, for high efficiency packaged photoelectronic element structural representation cutaway view of the present invention.
Fig. 4, for high efficiency packaged photoelectronic element structural representation cutaway view of the present invention (reflection layer is placed the conductive transparent material layer).
Fig. 5, for high efficiency packaged photoelectronic element structural representation cutaway view of the present invention (reflection layer is an optical grating construction).
Fig. 6, for high efficiency packaged photoelectronic element structural representation cutaway view of the present invention (reflection layer is optical grating construction, reflection layer is placed the conductive transparent material layer).
Fig. 7, for high efficiency packaged photoelectronic element structural representation cutaway view of the present invention (substrate is an insulating material).
Fig. 8, for high efficiency packaged photoelectronic element structural representation cutaway view of the present invention (substrate is insulating material, reflection layer is placed the conductive transparent material layer).
Fig. 9, for high efficiency packaged photoelectronic element structural representation cutaway view of the present invention (reflection layer is that optical grating construction, substrate are insulating material).
Figure 10, for high efficiency packaged photoelectronic element structural representation cutaway view of the present invention (reflection layer is that optical grating construction, substrate are insulating material, reflection layer is placed the conductive transparent material layer).
Below in conjunction with accompanying drawing the present invention is further elaborated.
As shown in Figure 3, high efficiency packaged photoelectronic element of the present invention is the packaging LED that comprises light-emittingdiode grain crystalline substance and crystal grain load bearing seat 130.
Crystal grain is mainly epitaxial structure 110 is formed on the conductive, transparent substrate 120.The zone at epitaxial structure 110 places comprises N type semiconductor district, active layers and p type semiconductor layer at least, which is provided with first electrode and is positioned at second electrode 150 on the plurality of distinct epitaxial layer of epitaxial structure 110.Substrate 120 is the conductive, transparent substrate.
Crystal grain load bearing seat 130 is provided with and is down concavity depression 131, and establishes in the surface plating and to be convexly equipped with the reflection layer with high reflectance 145 that is hemisphere face projection 132, uses incident light is changed into reverberation.
Form indium tin oxide layer (ITO), zinc oxide film (ZnO), cadmium tin oxide layer (CTO), indium-zinc oxide layer (IZO) or nickel oxide layer (NiO) conductive transparent material layer 140 in crystal grain load bearing seat 130 depressions 131.
As shown in Figure 4, also can will be convexly equipped with in the conductive transparent material layer 140 that the reflection layer 146 that is hemisphere face projection 133 is arranged at.
Crystal grain is fixed on the conductive transparent material layer 140 in crystal grain load bearing seat 130 depressions 131 with its conductive, transparent substrate 120, first electrode and conductive, transparent substrate 120, conductive transparent material layer 140 and crystal grain load bearing seat 130 electrically connect on it, and its second electrode 150 electrically connects with lead and lead frame 135.
Connect power supply with high efficiency packaged photoelectronic element of the present invention, the light of epitaxial structure 110 outputs is after conductive, transparent substrate 120 emits, arrive reflection layer 145 (or 146) through conductive transparent material layer 140 with high reflectance, so that light is all reflected away, and can not be absorbed because of encapsulation; And, light is convexly set in reflection layer 145 (or 146) when being hemisphere face projection 132 (or 133) when reflexing to, light is reflexed to different directions, prevent that light that reflection layer 145 (or 146) is produced epitaxial structure 110 from reflexing to the active layers of epitaxial structure 110 once again, avoid light to be absorbed (Re-absorptionGrating) again, guarantee the luminous efficiency of high efficiency packaged photoelectronic element of the present invention.
Be hemisphere projection 132 (or 133) for can make the irreflexive structure of light on the reflection layer 145 (or 146).It also can be to be arranged with in reflection layer 145 (or 146) goes up depression; Other can make the irreflexive structure of light also to can be optical grating construction etc.
As Fig. 5, shown in Figure 6, also reflection layer 147 or 148 can be designed to the structure of grating (Grating), and lay respectively at the surface of crystal grain load bearing seat 130 or be arranged in conductive transparent material layer 140, can get effect same as described above equally.So, light also can not be reflected onto the active layers of epitaxial structure 110.
As shown in Figure 7, high efficiency packaged photoelectronic element of the present invention is the packaging LED that comprises light-emittingdiode grain crystalline substance and crystal grain load bearing seat 200.
Crystal grain is mainly epitaxial structure 160 is formed on the transparent extremely edge substrate 170, and the zone at epitaxial structure 160 places comprises N type semiconductor district, active layers and p type semiconductor layer at least, which is provided with first electrode 180 and second electrode 190 on the plurality of distinct epitaxial layer that lays respectively in the epitaxial structure 160.
Crystal grain load bearing seat 200 is provided with and is down concavity depression 201, and establishes in the surface plating and to be convexly equipped with the reflection layer with high reflectance 215 that is hemisphere face projection 202.As shown in Figure 8, also can will be convexly equipped with in the conductive transparent material layer 210 that the reflection layer 216 that is hemisphere face projection 203 is arranged at.Use incident light is changed into reverberation.
What convex with on the reflection layer 215 is hemisphere projection 202 for can make the irreflexive structure of light.It also can be to be arranged with in reflection layer 215 (or 216) goes up depression; Other can make the irreflexive structure of light also to can be optical grating construction etc.
Form transparent material layer 210 in crystal grain load bearing seat 200 depressions 201.
Crystal grain is fixed on the transparent material layer 210 in crystal grain load bearing seat 200 depressions 201 with its insulation transparent substrate 170, and first electrode 180 and second electrode 190 are respectively through lead and crystal grain load bearing seat 200 and lead frame 205 electric connections it on.
Connect power supply with high efficiency packaged photoelectronic element of the present invention, the light of epitaxial structure 160 outputs is after transparency carrier 170 emits, arrive reflection layer 215 (or 216) through transparent material layer 210, so that light is all reflected away, and can not be absorbed because of encapsulation with high reflectance; And, light is convexly set in reflection layer 215 (or 216) when being hemisphere face projection 202 (or 203) when reflexing to, light is reflexed to different directions, prevent that light that reflection layer 215 (or 216) is produced epitaxial structure 160 from reflexing to the active layers of epitaxial structure 160 once again, avoid light to be absorbed (Re-absorption Grating) again, guarantee the luminous efficiency of high efficiency packaged photoelectronic element of the present invention.
As Fig. 9, shown in Figure 10, also reflection layer 217 (or 218) can be designed to the structure of grating (Grating), and lay respectively at the surface of crystal grain load bearing seat 200 or be arranged in transparent material layer 210, can get effect same as described above equally.So, light also can not be reflected onto the active layers of epitaxial structure 160.
The crystal grain load bearing seat can be the plug-in type lead frame; Also can be printed circuit board (PCB); Also can be metal pedestal;
Because the active member of high efficiency packaged photoelectronic element of the present invention is a light-emittingdiode crystal grain, also is applicable to every other active illuminating element and passive testing light element, for example, laser diode, inspection near-infrafed photodiodes.High efficiency packaged photoelectronic element of the present invention can increase considerably the light receiving efficiency of testing light element.So high efficiency packaged photoelectronic element crystal grain load bearing seat of the present invention is the plug-in type lead frame, to constitute plug-in type packaged photoelectronic element, surface mounted photoelectric cell and to pat the chip type photoelectric cell.
The method for packing of high efficiency packaged photoelectronic element of the present invention comprises the steps:
Moulding crystal grain load bearing seat
Be provided with the crystal grain load bearing seat that is following concavity depression with the compression molding techniques moulding;
Reflection layer is set
Be convexly equipped with the reflection layer that is the hemisphere face projection in the setting of crystal grain load bearing seat surface with high reflectance;
The shaping transparent material layer
In crystal grain load bearing seat depression, form indium tin oxide layer (ITO), zinc oxide film (ZnO), cadmium tin oxide layer (CTO), indium-zinc oxide layer (IZO) or nickel oxide layer (NiO) and be covered in conductive transparent material layer on the reflection layer;
Also can in crystal grain load bearing seat depression, form the transparent material layer that is covered on the reflection layer;
Also can form ground floor conductive, transparent or transparent material layer prior to crystal grain load bearing seat depression surface; On ground floor conductive, transparent or transparent material layer, reflection layer is set again; Form second layer conductive, transparent or the transparent material layer be covered on the reflection layer again, make to be convexly equipped with the reflection layer that is the hemisphere face projection and to be arranged in the conductive transparent material layer with high reflectance;
Fixing base
Fixing conductive, transparent substrate on the conductive transparent material layer; Also can be on transparent material layer the fixed insulation transparency carrier;
Electrode is set
First electroplax and second electrode are set on epitaxial structure;
Electrically connect
When transparency carrier was the conductive, transparent substrate, first utmost point and conductive, transparent substrate, conductive transparent material layer and crystal grain load bearing seat formed and electrically connect on the epitaxial structure; When transparency carrier was the insulation transparent substrate, first electrode electrically connected with lead and crystal grain load bearing seat on the epitaxial structure; Second electrode on the epitaxial structure electrically connects with lead and lead frame, finishes the encapsulation of the present invention for the high efficiency packaged photoelectronic element of packaging LED.
The present invention has following advantage:
1, the present invention ties up between crystal grain load bearing seat and the photoelectric cell and adds transparent material layer, so that photoelectricity The light that element produces can directly not absorbed by the die bond face, and reaches the purpose of significantly improving the element delivery efficiency. Simultaneously, when being applied to passive device, particularly during testing light element, high efficiency packaged photoelectronic element of the present invention And method for packing can increase the effective area of shining light of testing light element, reaches the purpose that improves element efficiency.
2, the present invention's reflection layer on crystal grain load bearing seat plated surface, and by specially designed reflection layer Shape, make the light of the generation of photoelectric cell can again not be reflected back toward active layers, effectively avoid photo elements The shortcoming that the part luminous efficiency is on the low side. When being applied to passive device, particularly during testing light element, can improve Testing light element is subjected to optical efficiency, effectively increases sensitivity and the accuracy of testing light element.
3, the present invention can increase substantially light path, conduct and the bright dipping of light in the photoelectric cell or the solid of sensitization The angle reaches the delivery efficiency that increases substantially photoelectric cell.
Claims (30)
1, a kind of high efficiency packaged photoelectronic element, it comprises photoelectric cell grain crystalline substance and crystal grain load bearing seat; Photoelectric cell crystal grain is provided with first electrode and second electrode that electrically connects with crystal grain load bearing seat and lead frame; It is characterized in that described crystal grain load bearing seat and photoelectric cell intergranule are provided with the transparent material layer of fixed light electric device crystal grain and incident light is changed into catoptrical reflection layer.
2, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described crystal grain load bearing seat is the plug-in type lead frame.
3, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described crystal grain load bearing seat is a printed circuit board (PCB).
4, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described crystal grain load bearing seat is a metal pedestal.
5, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described photoelectric cell crystal grain comprises the conductive, transparent substrate at least and is formed at epitaxial structure on the conductive, transparent substrate; First electrode and second electrode lay respectively on the plurality of distinct epitaxial layer in conductive, transparent substrate and the epitaxial structure on it.
6, high efficiency packaged photoelectronic element according to claim 1 is characterized in that the conductive transparent material layer of described transparent material layer for forming with indium tin oxide layer, zinc oxide film, cadmium tin oxide layer, indium-zinc oxide layer or nickel oxide layer.
7, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described photoelectric cell crystal grain comprises the insulation transparent substrate at least and is formed at epitaxial structure on the insulation transparent substrate; First electrode and second electrode lay respectively on the interior plurality of distinct epitaxial layer of epitaxial structure on it.
8, high efficiency packaged photoelectronic element according to claim 1 is characterized in that being convexly equipped with on the described reflection layer and avoids the intragranular hemisphere face projection that is of reverberation reflected back.
9, high efficiency packaged photoelectronic element according to claim 1 is characterized in that being arranged with on the described reflection layer and avoids the intragranular hemisphere face depression that is of reverberation reflected back.
10, high efficiency packaged photoelectronic element according to claim 1 is characterized in that described reflection layer is for avoiding the intragranular optical grating construction of reverberation reflected back.
11, a kind of high efficiency packaged photoelectronic element method for packing is characterized in that it comprises the following steps:
Moulding crystal grain load bearing seat
Reflection layer is set
Be provided with in the crystal grain load bearing seat incident light is changed into catoptrical reflection layer;
The shaping transparent material layer
Formation is covered in the transparent material layer of reflection layer;
Fixed light electric device crystal grain
Photoelectric cell crystal grain is fixed on the transparent material layer;
Electrically connect
First utmost point of photoelectric cell crystal grain and second utmost point are electrically connected with the conductive electrode of crystal grain load bearing seat and another polarity respectively.
12, high efficiency packaged photoelectronic element method for packing according to claim 11, the crystal grain load bearing seat that it is characterized in that described moulding is the plug-in type lead frame.
13, high efficiency packaged photoelectronic element method for packing according to claim 11, the crystal grain load bearing seat that it is characterized in that described moulding is a printed circuit board (PCB).
14, high efficiency packaged photoelectronic element method for packing according to claim 11, the crystal grain load bearing seat that it is characterized in that described moulding is a metal pedestal.
15, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that describedly being fixed in photoelectric cell crystal grain on the transparent material layer and comprising the conductive, transparent substrate at least and be formed at epitaxial structure on the conductive, transparent substrate; First electrode and second electrode lay respectively on the plurality of distinct epitaxial layer in conductive, transparent substrate and the epitaxial structure on it.
16, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that the described conductive transparent material layer of transparent material layer for forming with indium tin oxide layer, zinc oxide film, cadmium tin oxide layer, indium-zinc oxide layer or nickel oxide layer that is covered in reflection layer.
17, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that described photoelectric cell crystal grain comprises the insulation transparent substrate at least and is formed at epitaxial structure on the insulation transparent substrate; First electrode and second electrode lay respectively on the interior plurality of distinct epitaxial layer of epitaxial structure on it.
18, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that being convexly equipped with on the described reflection layer that is arranged on the crystal grain load bearing seat and avoids the intragranular hemisphere face projection that is of reverberation reflected back.
19, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that being arranged with on the described reflection layer that is arranged on the crystal grain load bearing seat and avoids the intragranular hemisphere face depression that is of reverberation reflected back.
20, high efficiency packaged photoelectronic element method for packing according to claim 11 is characterized in that describedly being arranged at reflection layer on the crystal grain load bearing seat for avoiding the intragranular optical grating construction of reverberation reflected back.
21, a kind of high efficiency packaged photoelectronic element method for packing is characterized in that it comprises the following steps:
Moulding crystal grain load bearing seat
Shaping ground floor transparent material layer
Form the ground floor transparent material layer in crystal grain load bearing seat depression surface;
Reflection layer is set
On the ground floor transparent material layer, be provided with incident light is changed into catoptrical reflection layer;
Shaping second layer transparent material layer
Formation is covered in the second layer transparent material layer on the reflection layer;
Fixed light electric device crystal grain
Photoelectric cell crystal grain is fixed on the second layer transparent material layer;
Electrically connect
First utmost point of photoelectric cell crystal grain and second utmost point are electrically connected with the conductive electrode of crystal grain load bearing seat and another polarity respectively.
22, high efficiency packaged photoelectronic element method for packing according to claim 21, the crystal grain load bearing seat that it is characterized in that described moulding is the plug-in type lead frame.
23, high efficiency packaged photoelectronic element method for packing according to claim 21, the crystal grain load bearing seat that it is characterized in that described moulding is a printed circuit board (PCB).
24, high efficiency packaged photoelectronic element method for packing according to claim 21, the crystal grain load bearing seat that it is characterized in that described moulding is a metal pedestal.
25, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that describedly being fixed in photoelectric cell crystal grain on the transparent material layer and comprising the conductive, transparent substrate at least and be formed at epitaxial structure on the conductive, transparent substrate; First electrode and second electrode lay respectively on the plurality of distinct epitaxial layer in conductive, transparent substrate and the epitaxial structure on it.
26, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that the described conductive transparent material layer of transparent material layer for forming with indium tin oxide layer, zinc oxide film, cadmium tin oxide layer, indium-zinc oxide layer or nickel oxide layer that is covered in reflection layer.
27, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that described photoelectric cell crystal grain comprises the insulation transparent substrate at least and is formed at epitaxial structure on the insulation transparent substrate; First electrode and second electrode lay respectively on the interior plurality of distinct epitaxial layer of epitaxial structure on it.
28, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that being convexly equipped with on the described reflection layer that is arranged on the crystal grain load bearing seat and avoids the intragranular hemisphere face projection that is of reverberation reflected back.
29, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that being arranged with on the described reflection layer that is arranged on the crystal grain load bearing seat and avoids the intragranular hemisphere face depression that is of reverberation reflected back.
30, high efficiency packaged photoelectronic element method for packing according to claim 21 is characterized in that describedly being arranged at reflection layer on the crystal grain load bearing seat for avoiding the intragranular optical grating construction of reverberation reflected back.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01110421XA CN1179422C (en) | 2001-04-04 | 2001-04-04 | High efficiency packaged photoelectronic element and its packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01110421XA CN1179422C (en) | 2001-04-04 | 2001-04-04 | High efficiency packaged photoelectronic element and its packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1378292A true CN1378292A (en) | 2002-11-06 |
| CN1179422C CN1179422C (en) | 2004-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB01110421XA Expired - Fee Related CN1179422C (en) | 2001-04-04 | 2001-04-04 | High efficiency packaged photoelectronic element and its packaging method |
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| Country | Link |
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| CN (1) | CN1179422C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222749A (en) * | 2010-04-19 | 2011-10-19 | 展晶科技(深圳)有限公司 | Light emitting component and module thereof |
| US8089087B2 (en) | 2008-11-18 | 2012-01-03 | Lg Innotek Co., Ltd. | Light emitting device package |
| CN103022319A (en) * | 2012-12-17 | 2013-04-03 | 四川鼎吉光电科技有限公司 | Light emitting diode (LED) encapsulating structure |
| CN106601726A (en) * | 2017-01-10 | 2017-04-26 | 广州市祺虹电子科技有限公司 | Color transparent LED light-emitting board |
| CN117038818A (en) * | 2023-10-08 | 2023-11-10 | 盐城鸿石智能科技有限公司 | High-reflection micro LED and preparation method thereof |
-
2001
- 2001-04-04 CN CNB01110421XA patent/CN1179422C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8089087B2 (en) | 2008-11-18 | 2012-01-03 | Lg Innotek Co., Ltd. | Light emitting device package |
| CN101740685B (en) * | 2008-11-18 | 2012-07-04 | Lg伊诺特有限公司 | Light emitting diode package |
| CN102222749A (en) * | 2010-04-19 | 2011-10-19 | 展晶科技(深圳)有限公司 | Light emitting component and module thereof |
| CN103022319A (en) * | 2012-12-17 | 2013-04-03 | 四川鼎吉光电科技有限公司 | Light emitting diode (LED) encapsulating structure |
| CN106601726A (en) * | 2017-01-10 | 2017-04-26 | 广州市祺虹电子科技有限公司 | Color transparent LED light-emitting board |
| CN117038818A (en) * | 2023-10-08 | 2023-11-10 | 盐城鸿石智能科技有限公司 | High-reflection micro LED and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN1179422C (en) | 2004-12-08 |
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