CN1373388A - Semiconductor device, its preparing process and LCD using it - Google Patents
Semiconductor device, its preparing process and LCD using it Download PDFInfo
- Publication number
- CN1373388A CN1373388A CN01108983A CN01108983A CN1373388A CN 1373388 A CN1373388 A CN 1373388A CN 01108983 A CN01108983 A CN 01108983A CN 01108983 A CN01108983 A CN 01108983A CN 1373388 A CN1373388 A CN 1373388A
- Authority
- CN
- China
- Prior art keywords
- spacer block
- conductive
- contact mat
- conductive projection
- lcd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1401—Structure
- H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
A LCD device is composed of circuit module, electrodes at one side of circuit module, electrically conductive bosses on the electrodes, substrate with contact pads relative to said bosses, connecting unit with more electrically conductive particles for connecting said bosses with said contact pads, and partitions for partitioning the electrically conductive particles from each other. Its advantages are no short circuit and poor contact, and high quality of product.
Description
The present invention relates to a kind of semiconductor device and its manufacture method, and the LCD of using this semiconductor device, particularly relate to a kind of anisotropic conducting film (anisotropic conductivefilm that utilizes, call ACF in the following text) carry out semiconductor device and its manufacture method that inter-module couples, and the LCD of using this semiconductor device, wherein pass through to form special construction, and strengthen the above-mentioned suitable degree that couples.
In some existing electronic installations, being connected between assembly and main body circuit is to be undertaken by conducting film (for example ACF).ACF mixes with dielectric synthetic resin and conductive particle (conductiveparticle), conductive particle 1 is shown in the cut-open view of Figure 1A, and its diameter is approximately 3～5 μ m, and its middle body 1a is a polymkeric substance, and be coated with metallic conductor 1b outside, as gold, nickel, tin etc.
ACF often is used to the manufacturing of LCD, having plenty of the chip for driving that is used for panel directly is packaged in manufacture method on the glass substrate (this area is commonly referred to as COG, be chip on glass), perhaps this chip for driving is engaged to flexible circuit board (COF, i.e. chip on FPC), rejoins to the method for substrate.
In addition, ACF also is applicable to chip join in the manufacture craft of general printed circuit board (PCB) (COB, i.e. chip onboard).
Shown in Figure 1B, with above-mentioned glass substrate, flexible circuit board, printed circuit board (PCB) or other circuit board piece of substrate 4 expressions.In the mill, be formed with contact mat (pad) 4a on its substrate 4, use for various signals, NE BY ENERGY TRANSFER.On the other hand, on the pin of chip 3, form thicker conductive projection (bump) 3a.Insert ACF 5 between chip for driving 3 and the substrate 4, heating changes the viscosity of ACF 5 then, then pressing chip for driving 3 and substrate 4, this moment corresponding contact mat 4a with conductive projection 3a between must be mutual the aligning.
Because conductive projection 3a has certain thickness, conductive particle 1 can be extruded between conductive projection 3a and contact mat 4a.By the metal level 1b that its outer peripheral face coats, the conductive particle 1 that is extruded just constitutes between conductive projection 3a and contact mat 4a and is electrically connected.Utilize ACF to carry out Chip Packaging, just can finish the action that bonding chip for driving 3 and circuit couple simultaneously.
When application ACF carried out Chip Packaging, common problem was the migration improperly (migration) of conductive particle.Because the viscosity of resin part descends among the ACF of heating back, when pressing conductive projection 3a and contact mat 4a, conductive particle therebetween is diffusive migration towards periphery easily.One of problem is shown in Fig. 1 C, and conductive particle 1 quantity between conductive projection 3a and contact mat 4a and increases the resistance that couples very little.Moreover another problem is shown in Fig. 1 D, and too many conductive particle 1 concentrates between adjacent conductive projection 3a, and produces the electrical connection of side direction, promptly adjacent conductive projection 3a and adjacent contact mat 4a is caused short circuit.Day by day increase at chip functions, and under the situation that the pin number on the unit area increases thereupon, problem of short-circuit will take place more and more easily.
For these problems, United States Patent (USP) proposes a kind of structure shown in Fig. 1 E No. 5844314, by producing bead 3a1 in the terminal both sides of conductive projection 3a, when engaging, just can form an accommodation space, prevent fleeing of conductive particle 1, and guarantee the quality that couples between conductive projection 3a and contact mat 4a.
Shown in Fig. 1 F, the method that No. the 5903056th, United States Patent (USP) proposes is in the both sides of the contact mat 4a of substrate 4 raised structures to be set, and reaches the effect of No. the 5844314th, similar above-mentioned United States Patent (USP).
Yet No. the 5844314th, United States Patent (USP) and No. 5903056 also unresolvedly produce problem of short-circuit between adjacent pin.
Shown in Fig. 1 G, the method that United States Patent (USP) proposes for No. 5650919 is the polymer architecture 6 that produces a spike shape in a side of the substrate 4 of connected structure, takes place to prevent above-mentioned short circuit when engaging, and limits the migration of conductive particle 1 simultaneously.
Yet, its shortcoming is the improper drift that can not prevent conductive particle 1 fully, in the top view shown in Fig. 1 H, because chip 3 can move in the plane with the conductive particle 1 that connects on the face of substrate 4, and the method that proposes of No. the 5650919th, United States Patent (USP) can only prevent the migration of unidirectional conductive particle 1, still may have when therefore engaging to form problem of short-circuit between above-mentioned adjacent contact mat and take place.
Moreover the spike shape structure 6 that this case proposed is occupied than large space at the root 6a of spike, is that the pin of avoiding snapping into the other end causes loose contact during joint, and the precision of its joint must improve more, can reduce quality virtually and improve manufacturing cost.
In addition; when engaging bad or having situation of short circuit to produce; and chip for driving needs anti-worker (rework), when changing; because prior art all is arranged on the structure that intercepts usefulness on the substrate 4; this structure that respectively intercepts usefulness is damaged in the process of regular meeting at heavy industry, and has lost the effect that intercepts conductive particle 1.Therefore, above-mentioned barrier structure is arranged at the method for substrate 4, also needs to improve.
The object of the present invention is to provide a kind of semiconductor device and its manufacture method and use the LCD of this semiconductor device, to address the above problem.
The object of the present invention is achieved like this, and a kind of LCD device promptly is provided, and comprises a circuit unit (circuit device), is provided with an electrode (electrode) in a side of this circuit unit; One conductive projection (conductive bump), this conductive projection is formed on this electrode; One substrate (substrate) is provided with a contact mat (bonding pad) corresponding to the position of this conductive projection; One engagement device (connecting means) has a plurality of conductive particles, and in order to engage this contact mat and this conductive projection, wherein this conductive particle is in order to be electrically connected this contact mat and this conductive projection; And a spacer block (barrier rib), be formed at the same side of this circuit unit with this conductive projection, in order to separate this conductive particle.Wherein, this spacer block is made with insulating material, as polyimide (polyimide, PI).
This contact is paid somebody's debt and expected repayment later and is comprised a plurality of first contact mats and a plurality of second contact mat, this first contact mat input end that is this LCD wherein, and this second contact mat is the output terminal of this LCD.This spacer block also comprises one first spacer block, and the parallel first direction of this first spacer block wherein is in order to separate the conductive projection between this first contact mat.
Moreover this spacer block also comprises second spacer block, and parallel this first direction of this second spacer block wherein is in order to separate the conductive projection between this second contact mat.And this spacer block also comprises the 3rd spacer block, and the parallel second direction of the 3rd spacer block wherein is in order to separate the conductive projection between this first contact mat and second contact mat.
Wherein this first spacer block can be connected in the 3rd adjacent spacer block, and forms the structure of a L shaped or T shape.Same, wherein this second spacer block can be connected in the 3rd adjacent spacer block, and forms the structure of a L shaped or T shape.
Moreover, this engagement device be anisotropic conductive film (anisotropic conductive film, ACF).And the material of this conductive projection can comprise gold, copper, nickel, tin any.In addition, the substrate of LCD device of the present invention is a glass substrate.Relative, this circuit unit is an integrated circuit (Integrated Circuit), a flexible circuit board (Flexible Printed Circuit) or a printed circuit board (PCB) (printed circuit board).
The present invention also provides a kind of semiconductor device, comprises an electrode (electrode); One conductive projection (conductive bump), this conductive projection is arranged on this electrode; One contact mat (bonding pad); One engagement device (connecting means) has a plurality of conductive particles, and in order to engage this contact mat and this conductive projection, wherein this conductive particle is in order to be electrically connected this contact mat and this conductive projection; And a spacer block (barrier rib), be arranged at the same side with this electrode, in order to separate this conductive particle.
Wherein, this spacer block is made with insulating material, as polyimide (polyimide, PI); This contact is paid somebody's debt and expected repayment later and is comprised a plurality of first contact mats and a plurality of second contact mat, this first contact mat input end that is this LCD wherein, and this second contact mat is the output terminal of this LCD; And this spacer block also comprises first spacer block, and the parallel first direction of this first spacer block wherein is in order to separate the conductive projection between this first contact mat; This spacer block also comprises second spacer block, and parallel this first direction of this second spacer block wherein is in order to separate the conductive projection between this second contact mat; Moreover this spacer block also comprises the 3rd spacer block, and the parallel second direction of the 3rd spacer block wherein is in order to separate the conductive projection between this first contact mat and second contact mat.
Wherein, this first spacer block and second spacer block are connected in the 3rd adjacent spacer block, and form structure L shaped or T shape.
Moreover, this engagement device be anisotropic conductive film (anisotropic conductive film, ACF); And the material of this conductive projection can comprise gold, copper, nickel, tin any.
The present invention also provides a kind of method of making semiconductor device, comprises the steps:
One circuit unit is provided, and wherein the side at this circuit unit is provided with a plurality of electrodes; On this circuit unit, form a protective seam, and expose this electrode; On this protective seam, form a plurality of conductive projections, and make this electrode be electrically connected to this conductive projection corresponding to this electrode; And form a plurality of spacer blocks, wherein this spacer block is formed at the same side of this conductive projection, and between this conductive projection.
Tie accompanying drawing below, describe embodiments of the invention in detail, wherein:
Figure 1A is typical conductive particle structural representation;
Figure 1B is the basic ACF joint method synoptic diagram of chip for driving and glass substrate;
Fig. 1 C, Fig. 1 D are the synoptic diagram of the problem that often has of traditional ACF juncture;
Fig. 1 E～Fig. 1 G is that prior art is in order to solve the Several Methods synoptic diagram of problem shown in Fig. 1 C;
Fig. 1 H is the synoptic diagram of open question in the prior art;
Fig. 2 is the partial structurtes synoptic diagram of the LCD of the embodiment of the invention;
Fig. 3 is a kind of configuration schematic diagram of set spacer block on the chip of the embodiment of the invention;
Fig. 4 is the another kind of configuration schematic diagram of set spacer block on the chip of the embodiment of the invention;
Fig. 5 a～Fig. 5 c is the forming process synoptic diagram of conductive projection on the typical chip;
Fig. 6 a～Fig. 6 g is the manufacture process synoptic diagram of first, second spacer block on the chip of the embodiment of the invention;
Fig. 7, Fig. 8 are the different application synoptic diagram of semiconductor device of the present invention.
Symbol description:
1～conductive particle; 1b～metal level; 3～chip; 3a～conductive projection; 4～substrate; 4a～contact mat; 5～ACF; 6～spike shape structure; 100～LCD; 10～chip; 11～basal plane; 11a, 11b～two edge; 111～electrode; 112～protective seam; 113～interface metal level; 114～photoresist layer; 115～opening; 116,116 '～PI layer; 117,117 '～photoresist layer; 12～conductive projection; 13～the first spacer blocks; 14～the second spacer blocks; 15～the 3rd spacer blocks; 20～baseplate part; 21～contact mat; 21a～first contact mat; 21b～second contact mat; 30～engagement device; 31～conductive particle; 01～first direction; 02～second direction.
First embodiment
With reference to Fig. 2, first embodiment of semiconductor device of the present invention is a LCD 100, comprising at least one chip 10 (being chip for driving), is provided with a basal plane 11, and this basal plane 11 is provided with at least two conductive projections 12 near relative two edge 11a, 11b.
Other has a baseplate part 20, and promptly the face glass of this LCD 100 is provided with a plurality of contact mats 21, and wherein this conductive projection 12 is provided with corresponding to this contact mat 21.
Because must constituting with baseplate part 20, this chip 10 is electrically connected, therefore be provided with an engagement device 30, wherein this engagement device 30 has several conductive particles 31, to engage this baseplate part 20 and this contact mat 21, and make these conductive particle 31 pinchings in 12 of this contact mat 21 and conductive projections, be electrically connected and this contact mat 21 constituted with conductive projection 12.Wherein, contact mat 21 also comprises a plurality of first contact 21a pad and a plurality of second contact mat 21b, and wherein this first contact mat 21a is the signal input part of this LCD, and this second contact mat 21b is the signal output part of this LCD.
In other words, in the design of the present invention, be provided with at least one spacer block (barrierrib) on circuit unit, wherein this conductive projection 12 is formed at the same side of this circuit unit, in order to separate conductive particle 31, avoids the improper drift of conductive particle 31.Spacer block is made with insulating material, and is divided into first spacer block 13, second spacer block 14 and the 3rd spacer block 15.As shown in Figure 2, these first spacer block, 13 parallel first directions 01 are in order to the conductive projection 12 between the first contact mat 21a of separating adjacent; Also parallel this first direction of this second spacer block 14 is in order to separate the conductive projection 12 between the second contact mat 21b; Moreover the 3rd spacer block 15 is parallel to a second direction 02, in order to separate the conductive projection 12 between the first contact mat 21a and the second contact mat 21b.
As shown in Figure 2, first, second spacer block 13,14 preferably is connected to the 3rd adjacent spacer block 15, and forms the structure of one L shaped (not icon) or T shape (as shown in the figure).
This insulating material be preferably polyimide (polyimide, PI).And wherein, this engagement device 30 preferably the commonly used anisotropic conductive film in this area (anisotropic conductive film, ACF).Moreover the material of this conductive projection 12 can be any of gold, copper, nickel, tin.
The included device of typical COG manufacture craft of the above display panels.For solving foregoing problem, see following examples for details.
Second embodiment
The second embodiment of the present invention as shown in Figure 3, central authorities have four the 3rd spacer blocks 15, are arranged in four jiaos substantially, this first, second spacer block 13,14 is connected to the 3rd contiguous spacer block 14.
The 3rd embodiment
The third embodiment of the present invention as shown in Figure 4, central authorities have two the 3rd spacer blocks 15, are arranged in parallel into two straight lines substantially, this first, second spacer block 13,14 is connected to the 3rd contiguous spacer block 15, forms two continuous T shapes.
In addition with regard to manufacture view, devices such as first, second and the 3rd spacer block 13,14,15 of the present invention are preferably made in the conductive projection manufacture craft of chip in the lump, to save the program of assembling.Shown in Fig. 5 a～Fig. 5 c, the chip conductive projection of the embodiment of the invention is with typical program manufacturing.
Shown in Fig. 5 a; chip is when carrying out the manufacture craft of conductive projection; in order to expose exposed electrode (electrode) 111 on basal plane 11, meeting forms on basal plane earlier and limits a protective seam (passivation layer) 112, and only exposes this electrode 111.And then cover a last interface metal level 113, be generally the alloy of Ti and W.The last photoresist layer 114 that on interface metal level 113, applies, carry out exposure imaging by photomask (mask) and ultraviolet ray, remove unwanted photoresist layer, and the opening 115 among formation Fig. 5 a, then shown in Fig. 5 b, covering a metal (being generally Au) on this dead slot more generally by the evaporation mode.With reference to Fig. 5 c, remove photoresist and can form projection 12 afterwards.The above is the manufacture method of typical conductive projection.
In order to form a predetermined barrier structure on the basal plane 11 of chip 10, manufacture method of the present invention has also comprised the step that forms barrier structure except forming conductive projection, and detailed steps is shown in Fig. 6 a to Fig. 6 g.
In Fig. 6 a, at first on basal plane, can form and limit a protective seam (passivationlayer) 112 earlier, and only expose this electrode 111.And then the last interface metal level 113 of covering.Then shown in Fig. 6 b, on interface metal level 113, apply PI layer 116, shown in Fig. 6 c, on PI layer 116, apply photoresist layer 117 (positive light anti-etching agent or negative type photoresist all can) then.Then shown in Fig. 6 d; by suitable photomask (not icon); carry out exposure imaging and etched manufacture craft; remove unwanted photoresist layer and PI layer; left promptly is by predetermined photoresist layer 117 ' and the PI layer of being protected 116 ' thereof, with the usefulness as aforesaid first, second and the 3rd spacer block 13,14,15.
Then, under situation, repeat Fig. 5 a～shown manufacture craft of Fig. 5 c as the aforementioned, just can form the program shown in Fig. 6 e～Fig. 6 g with first spacer block 13,14, second spacer block 15.As a result, on this chip, just can have conductive projection 12 and first spacer block 13,14 and second spacer block 15 simultaneously.
Except the COG manufacture craft of above-mentioned LCD, semiconductor device of the present invention more can be applicable to electronic package is coupled in the manufacture craft of general printed circuit board (PCB) (PCB), and as shown in Figure 7, wherein substrate 20 is a printed circuit board (PCB); And assembly is engaged in the manufacture craft of flexible circuit board (FPC), as shown in Figure 8, wherein substrate 20 is a flexible circuit board.
From the above, use electronic installation of the present invention, in process of production, can effectively avoid ACF when engaging because of the improper mobile distribution skewness of conductive particle so that be short-circuited between signal wire even energy line or the phenomenon of loose contact.In addition, spacer block of the present invention is arranged on the chip, this part manufacture craft can be transferred to chip manufacturer and finish, needn't be at the face glass of LCD, or its manufacture craft of the enterprising Xingqi of the substrate of other circuit arrangement.Can effectively increase product quality and increase productive rate according to electronic installation of the present invention.
In addition, when circuit unit (for example chip for driving) when substandard products occurring, carry out the anti-worker (rework) of circuit unit and change than prior art is easier according to semiconductor device of the present invention.Wherein spacer block is arranged on the circuit unit, rather than is positioned on the substrate.Therefore therefore, can not remove in the lump together with the spacer block on it when anti-worker, clean substrate, the circuit unit that the contact mat on bonded substrate again and another piece are good need not worry that just anti-trade union has damaged spacer block when (comprising the spacer block on it).
Though in conjunction with above specific embodiment the present invention has been described, yet it is not in order to limit the present invention, any those skilled in the art; without departing from the spirit and scope of the present invention; can do to change and retouching, therefore, protection scope of the present invention should be with being as the criterion that claim was defined.
Claims (22)
1. LCD device comprises:
One circuit unit (circuit device) is provided with an electrode (electrode) in a side of this circuit unit;
One conductive projection (conductive bump), this conductive projection is formed on this electrode;
One substrate (substrate) is provided with a contact mat (bondingpad) corresponding to the position of this conductive projection;
One engagement device (connecting means) has a plurality of conductive particles, and in order to engage this contact mat and this conductive projection, wherein this conductive particle is in order to be electrically connected this contact mat and this conductive projection; And
One spacer block (barrier rib) is formed at the same side of this circuit unit with this conductive projection, in order to separate this conductive particle.
2. LCD device as claimed in claim 1, wherein this spacer block is made with insulating material.
3. LCD device as claimed in claim 2, wherein this contact is paid somebody's debt and expected repayment later and is comprised a plurality of first contact mats and a plurality of second contact mat, this first contact mat input end that is this LCD wherein, this second contact mat is the output terminal of this LCD.
4. LCD device as claimed in claim 3, wherein this spacer block also comprises one first spacer block, the parallel first direction of this first spacer block wherein is in order to separate the conductive projection between this first contact mat.
5. LCD device as claimed in claim 3, wherein this spacer block also comprises second spacer block, parallel this first direction of this second spacer block wherein is in order to separate the conductive projection between this second contact mat.
6. LCD device as claimed in claim 3, wherein this spacer block also comprises the 3rd spacer block, the parallel second direction of the 3rd spacer block wherein is in order to separate the conductive projection between this first contact mat and second contact mat.
7. as claim 4 and 6 described LCD device, wherein this first spacer block is connected in the 3rd adjacent spacer block, and forms a L shaped structure.
8. LCD device as claimed in claim 6, wherein this first spacer block is connected in the 3rd adjacent spacer block, and forms the structure of a T shape.
9. LCD device as claimed in claim 6, wherein this second spacer block is connected in the 3rd adjacent spacer block, and forms a L shaped structure.
10. LCD device as claimed in claim 6, wherein this second spacer block is connected in the 3rd adjacent spacer block, and forms the structure of a T shape.
11. LCD device as claimed in claim 2, wherein this insulating material be polyimide (polyimide, PI).
12. LCD device as claimed in claim 2, wherein this engagement device be each to the anisotropy conducting film (anisotropic conductive film, ACF).
13. LCD device as claimed in claim 2, wherein the material of this conductive projection comprises any of gold, copper, nickel, tin.
14. LCD device as claimed in claim 2, wherein this substrate is a glass substrate.
15. LCD device as claimed in claim 2, wherein this circuit unit is an integrated circuit (Integrated Circuit).
16. LCD device as claimed in claim 2, wherein this circuit unit is a flexible circuit board (Flexible Printed Circuit).
17. a semiconductor device comprises:
One electrode (electrode);
One conductive projection (conductive bump), this conductive projection is arranged on this electrode;
One contact mat (bonding pad);
One engagement device (connecting means) has a plurality of conductive particles, and in order to engage this contact mat and this conductive projection, wherein this conductive particle is in order to be electrically connected this contact mat and this conductive projection; And
One spacer block (barrier rib) is arranged at the same side with this electrode, in order to separate this conductive particle.
18. semiconductor device as claimed in claim 17, wherein this spacer block is made with insulating material;
This contact is paid somebody's debt and expected repayment later and is comprised a plurality of first contact mats and a plurality of second contact mat, this first contact mat input end that is this LCD wherein, and this second contact mat is the output terminal of this LCD;
This spacer block also comprises first spacer block, and the parallel first direction of this first spacer block wherein is in order to separate the conductive projection between this first contact mat;
This spacer block more comprises second spacer block, and wherein this second spacer block is parallel this first direction, in order to separate this conductive projection between this second contact mat; And
This spacer block also comprises the 3rd spacer block, and the parallel second direction of the 3rd spacer block wherein is in order to separate the conductive projection between this first contact mat and second contact mat.
19. semiconductor device as claimed in claim 18, wherein this first spacer block and second spacer block are connected in the 3rd adjacent spacer block, and form L shaped structure.
20. semiconductor device as claimed in claim 18, wherein this first spacer block and second spacer block are connected in the 3rd adjacent spacer block, and form the structure of T shape.
21. semiconductor device as claimed in claim 18, wherein this insulating material be polyimide (polyimide, PI);
This engagement device be anisotropic conductive film (anisotropic conductive film, ACF); And
The material of this conductive projection comprises any of gold, copper, nickel, tin.
22. a method of making semiconductor device comprises the steps:
One circuit unit is provided, and wherein the side at this circuit unit is provided with a plurality of electrodes;
On this circuit unit, form a protective seam, and the subregion of exposing this electrode;
On this protective seam, form a plurality of conductive projections, and make this electrode be electrically connected to this conductive projection corresponding to this electrode; And
Form a plurality of spacer blocks, wherein this spacer block is formed at the same side of this conductive projection, and between this conductive projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011089830A CN1157634C (en) | 2001-02-28 | 2001-02-28 | semiconductor device, its preparing process and LCD using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011089830A CN1157634C (en) | 2001-02-28 | 2001-02-28 | semiconductor device, its preparing process and LCD using it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1373388A true CN1373388A (en) | 2002-10-09 |
| CN1157634C CN1157634C (en) | 2004-07-14 |
Family
ID=4657632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011089830A Expired - Lifetime CN1157634C (en) | 2001-02-28 | 2001-02-28 | semiconductor device, its preparing process and LCD using it |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1157634C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1314094C (en) * | 2004-02-25 | 2007-05-02 | 友达光电股份有限公司 | Package alignment structure |
| CN102122649A (en) * | 2009-12-21 | 2011-07-13 | 乐金显示有限公司 | Display device and manufacturing method of the same |
| CN106405892A (en) * | 2016-10-24 | 2017-02-15 | 昆山国显光电有限公司 | Crimping structure and crimping method of flat plate display device |
| EP3542253A4 (en) * | 2016-11-15 | 2020-07-22 | Boe Technology Group Co. Ltd. | Display substrate, touch panel and display panel, and fabricating method thereof |
-
2001
- 2001-02-28 CN CNB011089830A patent/CN1157634C/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1314094C (en) * | 2004-02-25 | 2007-05-02 | 友达光电股份有限公司 | Package alignment structure |
| CN102122649A (en) * | 2009-12-21 | 2011-07-13 | 乐金显示有限公司 | Display device and manufacturing method of the same |
| CN106405892A (en) * | 2016-10-24 | 2017-02-15 | 昆山国显光电有限公司 | Crimping structure and crimping method of flat plate display device |
| CN106405892B (en) * | 2016-10-24 | 2019-09-17 | 昆山国显光电有限公司 | The crimping structure and compression bonding method of panel display apparatus |
| EP3542253A4 (en) * | 2016-11-15 | 2020-07-22 | Boe Technology Group Co. Ltd. | Display substrate, touch panel and display panel, and fabricating method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1157634C (en) | 2004-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102489612B1 (en) | Flexible circuit board, cof module and electronic device comprising the same | |
| CN1908745A (en) | Display device having an anisotropic-conductive adhesive film | |
| CN1306333C (en) | Display board and liquid crystal display with the same | |
| CN1114946C (en) | Semiconductor device and manufacturing method and testing method of same | |
| US20080055291A1 (en) | Chip film package and display panel assembly having the same | |
| US7833910B2 (en) | Film substrate, fabrication method thereof, and image display substrate | |
| DE102005045661A1 (en) | Microelectronic device chip and manufacturing process, package and LCD device | |
| CN101060205A (en) | Flat display panel and connection structure | |
| CN1434330A (en) | LCD device | |
| CN1862327A (en) | Signal transmission assembly and display using same | |
| CN1217828A (en) | Connecting structure, liquid crystal device, electronic equipment, anisotropic conductive adhesive and method for manufacturing the adhesive | |
| CN101052273A (en) | PCB plate connection structure and connection method | |
| CN109445213B (en) | Display panel and display device | |
| CN1292627C (en) | Electric circuit substrate | |
| CN1819742A (en) | Circuit board for preventing adjacent welding-pad from short circuit | |
| EP0272678A2 (en) | Conductive pattern producing method and its applications | |
| CN1157634C (en) | semiconductor device, its preparing process and LCD using it | |
| CN1885516A (en) | Structure of electric connection pad | |
| CN1284236C (en) | Interposer device | |
| CN1913752A (en) | Method for manufacturing blended multi-layer circuit substrate | |
| CN100352028C (en) | Semiconductor device and its mfg.method | |
| CN1558270A (en) | Structure for increasing reliability of metal connecting line | |
| CN113556867B (en) | Flexible circuit board, display panel and preparation method of display panel | |
| CN2681524Y (en) | Line carrier plate | |
| JP2543128Y2 (en) | LCD panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: YOUDA PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: DAQI TECHNOLOGY CO., LTD. Effective date: 20030425 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20030425 Address after: Hsinchu Taiwan Science Industry Park Applicant after: AU Optronics Corporation Address before: Hsinchu Taiwan Science Industry Park Applicant before: Daqi Science and Technology Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20040714 |
|
| CX01 | Expiry of patent term |