CN1369747A

CN1369747A - Exposure method and exposure device

Info

Publication number: CN1369747A
Application number: CN02102898A
Authority: CN
Inventors: 町野胜弥
Original assignee: Nikon Corp
Current assignee: Nikon Corp
Priority date: 2001-01-30
Filing date: 2002-01-30
Publication date: 2002-09-18
Also published as: KR20020063798A; JP2002229215A; TW518662B

Abstract

Ten invention provides an exposure method and an exposure device which can carry out exposure process with high productivity and accuracy for a large-size substrate having a high flatness. The exposure device EX to expose a substrate P according to the pattern of a mask M by a projection optical system PL is equipped with a detecting device 6 to detect the flatness degree of the substrate P. A controlling device CONT controls the size of the projection region with respect to the substrate P to a specified size based on the detection result by the detecting device 6. The projection region is determined by controlling the illumination region for each mask Ma to Md by a blind part B.

Description

Exposure method and exposure device

Technical field

The invention relates to a kind of exposure method and exposure device.

Background technology

When the display device of personal computer (personal computer) or TV (television) video camera etc. when significantly using LCD (display) to make, light shield (mask) and emulsion are coated on glass (glass) substrate, and under static state, shine on light shield with exposure light, rely on again optical projection system with formed pattern (pattern) transcription on the light shield on glass substrate.Afterwards, use stepping repeatedly (step-and-repeat) type exposure device to merge the pattern on the glass substrate and form big picture in the mode of stepping in regular turn.

Yet, along with the trend of increasing fineness of pattern in recent years, become big, and because opening number NA becomes big cause, thereby the depth of focus that causes optical projection system is because of k λ/NA and the opening number NA of employed optical projection system in the exposure device set ²The relation of (k is a definite value, and λ is a wavelength) shoals.And when the manufacturing of carrying out LCD, the surface of employed glass substrate (exposure-processed face) must have less flatness in the depth of focus of optical projection system.But,, therefore be difficult to obtain desired flatness because glass substrate generally is to be made by the glass calendering to form.

Thereby, be difficult to once exposure-processed be carried out in the burn-out zone of the glass baseplate surface in the depth of focus of this optical projection system.In known, rely on the exposure-processed face on the glass substrate of the depth of focus that is positioned at optical projection system is predicted and the exposure area on the glass substrate is divided into a plurality of zonules.Afterwards, respectively cut zone is carried out exposure-processed, to cut apart that pattern merges and form the pattern of being scheduled to formed on the glass substrate in this cut zone.Particularly, at first, respectively the cut zone on the glass substrate of the depth of focus that is positioned at optical projection system is predicted, set the size of the cut zone of being predicted again respectively.The light shield of cutting apart pattern of the cut zone of corresponding this setting designs and produces to having separately respectively afterwards.Then, use that this light shield is experimental to carry out exposure-processed to glass substrate.In general, the flatness of glass substrate of cut zone of the glass substrate in the depth of focus of optical projection system of resulting from is not enough and form bad pattern, because relying on this in the depth of focus size of cut zone to be set correction once again, this cut zone forms, therefore, must revise again make corresponding this and set the light shield of the cut zone of revising once again, carry out afterwards exposure-processed once again with in whole exposure areas, obtain having the pattern of fixed degree of accuracy.

Yet, owing in the method, become after a plurality of little exposure areas earlier, carry out exposure-processed again to be predicted as the benchmark Region Segmentation that will expose completely, therefore, the exposure-processed that must test and reduce productivity or operating efficiency.And, after the exposure-processed of testing, need not meet the interior cut zone of the depth of focus of optical projection system, be modified to the new cut zone size that meets in the depth of focus according to the prediction setting, thereby need to revise the light shield of cutting apart pattern that making has corresponding this cut zone, efficient is further reduced.

Summary of the invention

Therefore, in view of said circumstances, purpose of the present invention provides a kind of exposure method and exposure device, with to having the large substrate of big flatness, under the situation of high productivity and good operating efficiency, carries out the good exposure-processed of degree of accuracy.

For addressing the above problem, the structure that corresponding diagram 1 to Fig. 9 is installed is adopted in preferred embodiment of the present invention.

Exposure method of the present invention, being applicable to exposes on substrate P in optical projection system PL forms the exposure method of pattern P A, the method comprises: detecting the flatness of substrate P, is benchmark with this testing result again, and the size of the view field on the substrate P is set.

Exposure device of the present invention being applicable to that in optical projection system PL on substrate P exposure forms the exposure device EX of pattern P A, and this device comprises pick-up unit (6, CONT) and setting device (CONT, M, B).Pick-up unit (6, CONT) is in order to detect the flatness of substrate P.Setting device (CONT, M, B) is a benchmark with this testing result, and the size of the view field on the substrate P is set.

In the present invention, detecting the flatness of substrate P, is benchmark with this testing result again, and the size of the view field on the substrate P is set.For example the exposure-processed face of pairing substrate P is set in the depth of focus of optical projection system PL in more efficient mode in view field.Therefore, owing to can more efficient mode set the preferable view field of corresponding flat degree, thereby can be when realizing high productivity, carry out the good exposure-processed of degree of accuracy in mode more efficiently.

For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. elaborate.

Description of drawings

Figure 1 shows that all summary construction diagrams of the exposure device of a preferred embodiment of the present invention.

Fig. 2 A to Fig. 2 B is depicted as the key diagram of masking device.

Figure 3 shows that process flow diagram in order to the exposure method that a preferred embodiment of the present invention is described.

Figure 4 shows that process flow diagram in order to the exposure method that a preferred embodiment of the present invention is described.

Fig. 5 A to Fig. 5 D is depicted as the key diagram of the exposure method of first preferred embodiment of the present invention.

Fig. 6 A to Fig. 6 B is depicted as the key diagram of base plan degree.

Fig. 7 A to Fig. 7 D is depicted as the key diagram of the exposure method of second preferred embodiment of the present invention.

Fig. 8 A to Fig. 8 B is depicted as the key diagram of the exposure method of other preferred embodiment of the present invention.

Figure 9 shows that the process flow diagram of an example of the manufacture process of semiconductor device.Label declaration:

1: light source 2: oval shape mirror

3a: refracting telescope 3b: refracting telescope

5: Laser interferometer 6: focus detection system (pick-up unit)

6a: light projection system 6b: optical receiver system

7: variable light shield 14: peristome

15a: transmittance section 15b: dim light portion

16: light shielding part

201,202,203,204,205,206, S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14, S15, S16, S17: step

AX: optical axis B: masking device (setting device)

B1: light source side is covered B2: the optical projection system side is covered

Bn: standard is covered Bg: preventing glass (setting device)

CONT: control device (pick-up unit, setting device, exposure-control device)

D, PSTD: driving mechanism EL: exposure light

EX: exposure device IL: optical lighting system

IU: optical unit M, M1, M2, M3: light shield

Ma, Mb, Mc, Md, Me, Mf: cut apart light shield (setting device)

MST: light shield platform P: glass substrate (substrate)

PA: pattern P A1: wire pattern (periphery pattern)

PA2: picture element pattern (pattern repeatedly)

PAa, PAb, PAc, PAd, PAe, PAf: cut apart pattern

PH: substrate carrier PL: optical projection system

PST: substrate stage

Embodiment first preferred embodiment

Below please refer to graphic exposure method and exposure device to first preferred embodiment of the present invention describes.Figure 1 shows that all structural drawing of exposure device.

Please refer to shown in Figure 1ly, exposure device EX has optical lighting system IL, cover (blind) device B and optical projection system PL.Wherein, optical lighting system IL with from the light beam of light source 1 to remaining in the light shield M (Ma～Md) throw light on light shield platform (mask stage) MST.Masking device B (setting device) is disposed in this optical lighting system IL, rely on to adjust the aperture area by exposure light EL, to stipulate that this exposure light EL is to the light shield M (illumination zone of Ma～Md).((image that the back of PAa～PAd) is produced is projeced on the glass substrate P (substrate) of dihedral the pattern P A of Ma～Md) optical projection system PL in light shield M in order to exposure light EL is thrown light on.The all actions of exposure device EX are carried out with being designated as benchmark of control device CONT (setting device, exposure-control device).

Moreover in this preferred embodiment, exposure device EX is all under the static state at light shield M and substrate P, after exposing with the pattern of light shield M again with the exposure device of the stepping type repeatedly of substrate P stepping in regular turn.At this, in this preferred embodiment, when deciding pattern in transcription on the substrate P, with this decide pattern be divided into a plurality of parts and form separately corresponding each cut apart a plurality of light shield Ma～Md of cutting apart of pattern P Aa～PAd, and merge and rely on that previous segmentation light shield Ma～Md's alternately and in the formed pattern P Aa～PAd (it is continuous to be about to picture) of cutting apart on the substrate P can form a synthesising pattern on substrate P.

Light source 1 for example is that the emission wavelength that is positioned at g line (436nm), h line (405nm), i line (365nm) and trickleer field is the ArF laser excimer laser (laser excimerlaser) of 193nm, the fluorine laser (F that emission wavelength is 157nm ₂Laser), emission wavelength is krypton laser (Krypton-dimer laser, the Kr of 146nm ₂Laser) or emission wavelength be Ar Laser (Argon-dimer laser, the Ar of 126nm ₂Laser).

From the emitted exposure light EL of light source 1 with oval shape mirror 2 optically focused, again with refracting telescope (mirror) the 3a reflection of optical lighting system IL, to be incident among the optical unit IU that constitutes optical lighting system IL.Optical unit IU have relay lens (relay lens), with so that the optics integrator of exposure light EL homogenization (optical integrator), with so that exposure light EL injects the input lens (input lens) of optics integrator, in order to will be concentrated on a plurality of lens (optical device) of relay lens on the light shield M and collector lens (condenser lens) etc. by the emitted exposure light EL of optics integrator.

As shown in Figure 1, the light shield Ma～Md with each pattern P Aa～PAd is equipped on the variable light shield (mask change) 7.Variable light shield 7 is configured to and can moves freely in the top of light shield platform MST, to carry out load unloading (load unload) to cutting apart light shield Ma～Md respectively on light shield platform MST.

The light shield M that is equipped on the variable light shield 7 is contained in the light shield boxroom (mask library) (not icon).When light shield M in the light shield boxroom is equipped on the variable light shield 7, from the light shield boxroom with the loading bin of icon (loader) not) light shield M is loaded on the light shield platform MST, collect light shield M on the light shield platform MST with variable light shield 7 again, so that light shield M is equipped on the variable light shield 7.On the other hand, the light shield M that is equipped on the variable light shield 7 can get back in the light shield boxroom, also promptly when the light shield M from variable light shield 7 is carried on light shield platform MST, with the loading bin of aforementioned not icon the light shield M on the light shield platform MST is retracted the light shield boxroom.

By the emitted exposure light EL of optical unit IU, after reflection, be incident to and go up light shield M on the light shield platform MST that moves (among the Ma～Md) in Quadratic Finite Element direction (being the XY direction) through refracting telescope 3b.What is more, and the exposure light EL that sees through light shield M is incident among the optical projection system PL, and be incident in the substrate P through a plurality of lens (optical device) that constitute this optical projection system PL, and form the image of the pattern of light shield M on the surface of substrate P.

Substrate P goes up the coating emulsion in its surface, remains on substrate carrier (holder) PH again.This is arranged on the substrate stage PST in order to the substrate carrier PH that keeps substrate P.Substrate stage PST also can be set as and can move or be set as on the XYZ direction and can rotate on Z-direction.What is more, also can move on the direction of the optical axis AX that favours exposure light EL, and when supporting have when the substrate P, also the level of visual substrate P (leveling) adjusted.

Position in the XY plane of substrate stage PST is detected and is got with Laser interferometer 5.On the other hand, the position of the Z direction of substrate stage is then detected and is got with the focus detection system 6 (pick-up unit) with light projection system 6a and optical receiver system 6b.The testing result of Laser interferometer 5 and focus detection system 6 is exported to after the control device CONT, and substrate stage PST can being designated as benchmark and relying on driving mechanism PSTD and move with control device CONT.And focus detection system 6 detects the position on the surface (exposure-processed face) of the substrate P that is kept on the substrate carrier PH, to provide information about this substrate P position to control device CONT.Control device CONT can be before carrying out exposure-processed, testing result with the surface location of 6 pairs of substrate P of focus detection system is a benchmark, through driving mechanism PSTD moving substrate pedestal PST, so that the focal position of the surface location of substrate P and optical projection system PL coincide mutually.

Moreover when substrate P was coincide mutually with the image space of optical projection system PL, focus checkout system 6 not necessarily needed to detect the center of the view field of the optical projection system PL on the substrate P.For example, please refer to shown in Fig. 5 B, when 4 patterns of cutting apart light shield Ma～Md simultaneously continuous exposure when on the substrate P, focus checkout system 6 detects the position that engages on the substrate P and (that is to say, the projected position of the part of cutting apart light shield Ma～Md of Fig. 5 B), the mean place of its testing result also is consistent with the image space of optical projection system PL.Therefore, can reduce the line width variation of the bonding part on the substrate P, and produce high-quality LCD.

In addition, focus detection system 6 (pick-up unit) can detect a plurality of positions on substrate P surface, and with in this testing result input control device CONT.Control device CONT can be a benchmark with a plurality of positions information on substrate P surface, and tries to achieve the flatness of substrate P.That is to say, only utilize the focus detection system 6 to detect a plurality of positions, substrate P surface and be the control device CONT of the benchmark flatness of trying to achieve substrate P, can constitute pick-up unit in order to the flatness that detects substrate P with this testing result.

Be disposed at the interior masking device B (setting device) of optical lighting system IL in order to adjust the illumination zone of exposure light EL to light shield M, and its fixed size can set the size of illumination zone, even set the size of optical projection system PL to the view field of substrate P.

Please refer to shown in Fig. 2 A, masking device B has that light source side is covered B1 and the optical projection system side is covered B2.Light source side is covered B1 and optical projection system side and is covered that B2 is respectively equipped with integrally formed preventing glass (glass blind) Bg and standard is covered (normal blind) Bn.The exposure-processed (repeated exposure) of preventing glass Bg in order to continue picture, standard are covered Bn then in order to carry out not continuing the exposure-processed of picture.Light source side is covered that B1 and optical projection system side cover that B2 relies on the driving mechanism D that drives according to the indication of control device CONT and can be gone up and move in the Y of Fig. 2 A direction (with the direction of the optical axis AX intersection of exposure light EL).In the process in exposure-processed, when switching preventing glass Bg and standard and covering Bn, light source side is covered B1 and optical projection system side and is covered B2 and move on the Y of Fig. 2 A direction respectively.

Standard is covered Bn and is had peristome 14, and is made of light shielding part 16 around it.In peristome 14, be provided with the not knife edge of icon (knife-edge).On the whole, driving mechanism D moves that light source side is covered B1 and the optical projection system side is covered B2, so that its peristome 14 combinations and changing separately form the size that the opening that exposure light EL passes through is provided, and then adjusts the illumination zone of exposure light EL to light shield M.

Preventing glass Bg has by the transparent transmittance section 15a that glass substrate constituted.Constituted by light shielding part 16 around the 15a of transmittance section.Moreover, at the intersection of transmittance section 15a and light shielding part 16, that is, on end, be provided with by the variation of the density of chromium screenings such as (chrome) optical activity parts and steaming the 15b of dim light portion that obtains by the transmittance section 15a that glass substrate constituted.Chromium film in the 15b of dim light portion is steaming on glass substrate in the mode of point (dot) shape of the size of the parsing boundary that is lower than exposure device EX, the density of the chromium film of this point-like is set for by transmittance section 15a cumulative towards light shielding part 16, so, the light extinction rate of the 15b of dim light portion is changed.

The setting of the illumination zone of the exposure light EL that continues the light shield M when the picture shown in Fig. 2 B, is covered each preventing glass Bg, Bg that B1 and optical projection system side cover B2 with light source side and quantitatively made up and get according to institute.At last, move with driving mechanism D that light source side is covered B1 and the optical projection system side is covered B2, so that each transmittance section 15a is according to quantitatively combination and adjust and form the size that sees through portion that can see through exposure light EL of institute, and then adjustment exposure light EL is to the illumination zone of light shield M.On the whole, rely on the overlapping exposure of substrate P in the dim light zone of the corresponding dim light 15b of portion, can make exposure in the Zone Full of synthesising pattern is homogeneous.Moreover, even the 15b of dim light portion of the lateral part that is divided into top and the bottom as shown in Fig. 2 A to Fig. 2 B is not set, also can be when carrying out exposure-processed, relying on glass with at least one side of light source side or optical projection system side to cover Bg mobile on laterally (Y direction) exposes the light quantity distribution that produced and form the dim light zone in view field, therefore when this dim light zone overlaps with substrate P, the interior exposure of Zone Full that also can make synthesising pattern is a homogeneous.

By steaming the adjustment that the 15b of dim light portion that formed glass covers Bg can rely on molecule rank (level) to have the light quantity distribution of preferable degree of accuracy, so, when continuing picture (repeated exposure), can carry out the homogenization of the exposure in the Zone Full of synthesising pattern more accurately.Thereby, for example be to be concatenated to form same part pattern, also can carry out more accurately repeatedly the coincidence of pattern (picture element pattern (pixel pattern)).

Then, please refer to Fig. 3 and shown in Figure 4 to utilizing control device CONT that the last method of formed pattern exposure on substrate P of light shield M described.

At first, control device CONT carries out the optimization of view field so that the exposure area of substrate P is positioned at the depth of focus of optical projection system PL, that is to say, differentiation is the exposure-processed of the exposure area being carried out once blanket property, or carries out exposure-processed to cutting apart the cut zone that the exposure area forms.So, and to the pattern of this exposure-processed gained necessity corresponding with it decide degree of accuracy pattern judge.For example be that institutes such as pattern that driver (driver) is enrolled or contact window (contact hole) pattern decide resolution when being necessary pattern, then be judged as and carry out optimization (just being the situation of "Yes").When institutes such as insulation course decide resolution when allowing pattern, then be judged as and need not carry out optimization (just being the situation of "No") (step S1).

In step S1, be judged as under the situation that to carry out optimization (just being the situation of "Yes") as control device CONT, when with decided resolution the pattern of necessity being exposed, because must be, thereby begin to obtain aforesaid data (step S2) relevant for the data of the flatness of substrate P.

On the other hand, when control device CONT is judged as the situation that need not carry out optimization (just being the situation of "No") in step S1, then begin to carry out common exposure actions (step S14).

Then, control device CONT judges whether to carry out the detection (step S3) of the flatness of substrate P.

When control device CONT was judged as the detection (just being the situation of "Yes") that need carry out the flatness of substrate P in step S3, then the substrate P with pending exposure-processed was carried on substrate stage PST upward (step S4).

Then, control device CONT control focus detection system 6 (pick-up unit) detect burn-out zone about substrate P (be substrate P the surface comprehensively) in the information of position of multiple spot.Is benchmark to installing CONT with the testing result of pick-up unit 6, tries to achieve the flatness (step S5) of substrate P.

Moreover the clathrate position of (full exposure area) comprehensively of 6 pairs of substrate P of pick-up unit is detected.

On the other hand, when control device CONT is judged as the detection (just being the situation of "No") of the flatness of not carrying out substrate P in step S3, in the memory storage that this control device CONT can require to be connected about the information (step S6) of the flatness of substrate P.

At this, store in the memory storage by pick-up unit 6 or other flatness checking device detected about the information of the flatness of substrate P.This other flatness checking device for example is the flatness checking device in the code developer (code developer) of being located at exposure device EX institute adjacency.Flatness checking device in this code developer detects in order to the flatness of the substrate P after video picture is handled, generally speaking, since by a collection of (lot) of the substrate P that glass substrate constituted each shape much at one, thereby use the detection data of the flatness of the substrate P after video picture is handled to get final product.

The data about flatness (step S7) that control device CONT accepts in the memory storage to be stored.

Control device CONT judges whether the substrate P with this flatness is carried out exposure-processed obtain information about the flatness of substrate P in step S5 or step S7 after.Particularly, after the depth of focus of the optical projection system PL in trying to achieve the full exposure area of substrate P and the difference DEL of flatness, whether the difference DEL that judges this is greater than the definite value δ of institute (step S8).

At this, the definite value δ of institute is default allowable value, because in the depth of focus of optical projection system PL, in the essential factor that the exposure-processed face of substrate P is influenced to some extent, this result who quantizes contains the essential factor beyond the flatness that substrate P is arranged.Particularly, the inhomogeneity of the emulsion on the substrate P, the flatness of substrate carrier PH, the same focus error between focusing (auto-focus) degree of accuracy, automatic focusing and the optical projection system PL, the minute surface bending of optical system etc. automatically, when aforementioned difference DEL is that the definite value δ of institute is when above, for the depth of focus of optical projection system PL, the flatness of substrate P is in allowable value.

Control device CONT carries out common exposure-processed action (step S14) when this difference DEL is greater than the definite value δ of institute, and when this difference DEL is less than the definite value δ of institute, then carries out step S9 and satisfy the view field of this difference DEL greater than the condition of the definite value δ of institute to ask for.

In addition, also have the whole inclination of substrate P to obtain the situation of good flatness.

For this reason, be judged as in step S8 must be with the horizontal revisal of substrate P integral body for control device CONT.Particularly, when the plane of substrate carrier PH be a ₁X+b ₁Y+c ₁Z+d=0, and according to the data of the flatness of substrate P and obtain the plane a of similar substrate P ₂X+b ₂Y+c ₂When the z+d=0, this moment, level (cotangent (cotangent) just) angle of substrate stage PST was represented with θ, and θ satisfies when the mathematical expression 1, and control device CONT finishes the horizontal revisal of substrate P, and carries out step S14.

Mathematical expression 1:

{COS}^{- 1} | \frac{a_{1} a_{2} + b_{1} b_{2} + c_{1} c_{2}}{\sqrt{a_{1}^{2} + b_{1}^{2} + c_{1}^{2}} \sqrt{a_{2}^{2} + b_{2}^{2} + c_{2}^{2}}} | \leq θ

Moreover, control device CONT the situation that does not satisfy following formula or in step S9 not when the determination data of flatness obtains the situation of flatness of approximate substrate, then (for example be that 44mm * 44mm) calculates and the required horizontal revisal of carrying out of almost plane that obtains, carry out all horizontal revisals of substrate P according to each exposure area.

Moreover control device CONT is when the situation of the almost plane that calculates each exposure area, to remove the relatively poor particular point (x of part plan degree ₃, y ₃, z ₃) calculate afterwards and get.

Control device CONT is in step S9, and following formula can calculate particular point (x ₃, y ₃, z ₃) to carrying out the almost plane a of the exposure area after the horizontal revisal ₂' x+b ₂' y+c ₂' distance H of z+d '=0.Mathematical expression 2:

H = \frac{| {a_{2}}^{'} x_{3} + {b_{2}}^{'} y_{3} + {c_{2}}^{'} z_{3} + {d_{2}}^{'} |}{\sqrt{{a_{2}}^{' 2} + {b_{2}}^{' 2} + {c_{2}}^{' 2}}}

At this moment, control device CONT is DEL with the difference between the depth of focus of optical projection system PL and the distance H calculated, differs from DEL and the definite value δ of institute relatively with this again, and the DEL that is on duty is bigger situation, then carries out step S10.

Control device CONT during less than the situation of the definite value δ of institute, then dwindles exposure area (at last till 10mm * 10mm) at difference DEL in regular turn, and the DEL that is on duty then sets this and is the exposure area greater than after the definite value δ of institute, carries out step S10 again.

Control device CONT tries to achieve after poor DEL is view field's size more than the definite value δ of institute, judges whether that the view field of the size of trying to achieve having handles.Particularly, when by have a plurality of substrate P of cutting apart the substrate P institute be combined into of pattern carry out decide the exposure of pattern when, judge whether a plurality of light shield M of cutting apart pattern of the size with view field that corresponding step S9 tries to achieve will change (step S10).

When control device CONT is judged as the situation (just being the situation of "Yes") that needs change light shield M at step S10, selection has the light shield M of cutting apart pattern of view field's size of being tried to achieve among the corresponding step S9, again this light shield M is equipped on the variable light shield 7, afterwards, the light shield M of the pattern that will have that fixed cut apart is carried on light shield platform MST and goes up (step S11).

For example, please refer to shown in Fig. 5 A, being formed at when pattern P A on the light shield M exposes to substrate P, 4 of forming shown in Fig. 5 B of pattern P A are cut apart pattern P Aa～PAd, carry out exposure-processed to be formed with light shield Ma～Md of cutting apart pattern P Aa～PAd respectively again.The result of the flatness of the substrate P that detects thus and get, can make the situation of this flatness big (relatively poor) as shown in Figure 6A, directly view field is set for lessly, can make the exposure-processed face of corresponding this substrate P become the depth of focus that is positioned at optical projection system PL.Thereby, please refer to shown in Fig. 5 C, less view field is carried out exposure-processed, pattern P A for example by be divided into respectively 6 cut apart pattern P Aa～PAf etc. less cut apart pattern, re-use and have this light shield Ma～Mf of cutting apart pattern P Aa～PAf respectively and carry out exposure-processed for this reason, the light shield Ma～Md of cutting apart that control device CONT (exposure-control device) indication will remain on the variable light shield 7 changes to and cuts apart light shield Ma～Mf.In general, will cut apart light shield Ma～Md, and will cut apart light shield Ma～Mf and load on the variable light shield 7 from 7 unloadings of variable light shield.

On the other hand, when detection device 6 detects and the flatness of the substrate P that obtains during for less (preferable) shown in Fig. 6 B, 4 of Fig. 5 B can be cut apart pattern P Aa～PAd and form the pattern of cutting apart with big view field, and replaceable light shield Ma～Md and the exposure-processed face of the substrate P of the depth of focus that is positioned at optical projection system PL of corresponding this view field is carried out common exposure-processed action.

Moreover, when the flatness of substrate P is the fluctuating shown in Fig. 6 B less (preferable), then can carry out exposure-processed to having the pattern P A of cutting apart pattern more greatly.For example be to cut apart light shield Ma～Md and replace to and have bigger 2 light shield Ma, Mb cutting apart pattern P Aa, PAb respectively shown in Fig. 5 D with remaining on the variable light shield 74.

Control device CONT is judged as in step S10 when not changing light shield M (just being the situation of "No"), owing to can't contain the exposure-processed face of substrate P in the depth of focus of optical projection system PL in the view field at this moment, thereby send the warning (step S15) that surpasses (over) depth of focus.

Control device CONT after step S15, judge whether to continue fixed processing (step S16).

When control device CONT is judged as the situation of not proceeding to handle (just being the situation of "No"), then finishes this and a series ofly decide to handle.

Control device CONT judges in step 11 whether the light shield M of institute's load is suitable light shield (step S12).

This suitable light shield for example is the light shield with the pattern repeatedly that is shaped repeatedly by same part pattern.This light shield that has repeatedly pattern can carry out the preferable lasting picture of degree of accuracy easily.

When control device CONT is judged as suitable light shield (just being the situation of "Yes") in step S12 when, then carry out the setting (step S13) of masking device B according to the light shield of being judged that has repeatedly pattern.

At last, for continuing picture the preventing glass Bg among the masking device B is done best setting, with when substrate P is exposed, make cut apart pattern P Aa～PAd (periphery of PAa～PAf) is bonded with each other, and make all on substrate P, form decide pattern P A.

On the other hand, control device CONT is judged as in step S12 and is not to be fit to when the light shield (just being the situation of "No"), then is not the warning (step S17) that is fit to light shield.

Control device CONT be not be fit to the warning of light shield after, the judgement (step S16) that can whether proceed to handle.

At this moment, the exposure-processed face of the substrate P of corresponding view field is changed to the suitable position of depth of focus Nei Gengjia (for example being the median in the depth of focus), and (the preventing glass Bg of PAa～PAf) is further cut apart exposure to utilize tool respectively to cut apart pattern P Aa～PAd more respectively.For example be that field of illumination with the preventing glass Bg of corresponding 1 exposure light of cutting apart pattern P aa is divided into littler block, these zonules are engaged on the substrate P.

So, owing to use preventing glass Bg with the pattern repeatedly (picture element pattern) of embarking on journey repeatedly by same part pattern, therefore, in each view field of the cut zone that is fit to that correspondence sets, can make the exposure-processed face of substrate P be positioned at the depth of focus of optical projection system PL fully.At last, pattern also can be used the other parts of pattern instead repeatedly, when the scope of the flatness of hoping that substrate P had extensively the time, then sets for more extensive to the field of illumination of light shield M (tool is cut apart pattern).On the other hand, when the scope of the flatness of hoping that substrate P had is narrow and small, then set for narrower and small to the field of illumination of light shield M (tool is cut apart pattern).

When control device CONT is judged as the situation of proceeding to handle in step S16, when then continuing to use the light shield M that is equipped on the variable light shield 7 to handle, enter step S13, carry out the setting of preventing glass Bg.In addition in step S10, when control device CONT judged that the exposure-processed face of the substrate P of corresponding view field carries out the exchange of light shield M not in the depth of focus of optical projection system PL, the light shield M that variable light shield 7 (light shield platform MST) can be kept changes to have in order to the light shield M of formation greater than the pattern (cutting apart pattern) of the view field of prestige view field.Thereby, carry out the control of its view field to having this light shield M with preventing glass Bg, and make the view field (less view field) of being hoped greater than the pattern of prestige pattern.

At last, (among the PAa～PAf), for example be to cut apart the field of illumination of being cut apart among the preventing glass Bg of pattern P aa in corresponding 1 further to be split to form cutting apart pattern P Aa～PAd for cutting apart pattern P Aa.

In the above description, be the flatness that detects substrate P, serve as to lead the size of substrate P being set its view field with this testing result again, to carry out the good exposure-processed of degree of accuracy more efficiently.Yet, when the flatness that can't detect substrate in known technology, worst-case value to the flatness of substrate P is predicted, be predicted as main making with this again with light shield of cutting apart pattern, use this light shield to carry out the test of exposure-processed and video picture processing, when result from substrate P flatness and when making the exposure-processed face of substrate P can't enter the situation (just the resolution of formed pattern is the situation that is lower than fixed degree of accuracy) of the depth of focus of optical projection system PL, then need the pattern of cutting apart of light shield is modified to after the littler structure and carries out exposure-processed once more, this operation of carrying out is for more inefficient.Yet, in the present invention, owing to detect earlier the flatness of substrate P, and serve as the size that view field is set on the basis with this testing result, carry out exposure-processed again, therefore, need not carry out the structural modification or the test exposure development treatment of known light shield.So, can significantly improve turnout (throughput), and can under the situation of high productivity, carry out the good exposure-processed of degree of accuracy efficiently.

Generally speaking, the first depth of focus PL of corresponding optical projection system PL and set the size of view field, can be when using the bigger optical projection system PL of the depth of focus, bigger view field is carried out exposure-processed, so can under the situation that reduces exposure-processed number of times or minimizing light shield number, carry out exposure-processed, and then carry out more efficient exposure-processed under the situation cheaply.On the other hand, when using the less optical projection system PL of the depth of focus, also can carry out the good exposure-processed of degree of accuracy to less view field.Generally speaking, the exposure-processed face of substrate P is positioned at when the depth of focus of optical projection system PL, can be automatically the size of view field be carried out from large to small adjustment, and then can in whole exposure area of substrate P, form the pattern of pinpoint accuracy along with the flatness of counterpart substrate P.Wherein, because this carries out the setting in the best projection zone of corresponding flat degree with preferable efficient, therefore, can realize high productivity, even carry out the good exposure-processed of degree of accuracy more efficiently.

Because pattern formed by a plurality of patterns of cutting apart, therefore, when this substrate P was carried out the exposure of pattern, these a plurality of patterns of cutting apart can mutually combine on substrate P, and in corresponding respectively view field with the flatness of being hoped respectively formation cut apart pattern.Thereby, can all form the pattern of pinpoint accuracy.

Because a plurality of patterns of cutting apart are formed at respectively on a plurality of light shields, therefore the exposure-processed of carrying out by means of the replacement of these light shields is the good exposure-processed of operation.

At this moment, because this pattern has the pattern repeatedly that same part pattern is shaped repeatedly, therefore when continuing when the picture, meeting pinpoint accuracy ground closely cooperates with the pattern position of bonding part, and the shape of the pattern of the part beyond junction surface and the junction surface etc. can be formed at the optional position simultaneously easily.More very it in this case, uses preventing glass Bg to carry out the mode that joining process promptly can pinpoint accuracy and carries out easily.Second embodiment

Then, light method and the exposure device to preferred embodiment of the present invention describes.At this, this preferred embodiment has identical structure division with aforementioned first preferred embodiment, represents with prosign, and is simple or omit its explanation.

In first preferred embodiment, be formed at respectively on a plurality of light shields by a plurality of patterns of cutting apart, shine on each light shield with exposure light again, images that these are a plurality of cuts apart pattern be formed in engaging on the substrate P that exposure forms on the substrate P decide pattern.And in second preferred embodiment, employed light shield M be have decide 1 light shield of pattern, and the change of the view field of light shield M is divided into the field of illumination of a plurality of exposure lights with masking device B (setting device), to be divided into formed pattern on the light shield a plurality of, again each is cut apart pattern and be engaged on the substrate P, on substrate P, to form exposing patterns.

Please refer to shown in Fig. 7 A, when with the light shield M that is formed with pattern P A substrate P being exposed, again the result who obtains with the flatness that detects substrate P to be benchmark set for shown in Fig. 7 B the size of the view field of substrate P 4 cut apart pattern P Aa～PAd (cut zone).In this case, by the preventing glass Bg of masking device B combination to be divided into a plurality of to the irradiation area of light shield M exposure light EL, and the pattern P A that is formed at light shield M is made of a plurality of pattern P Aa～PAd of cutting apart, and then these a plurality of pattern P Aa～PAd of cutting apart are engaged on the substrate P.

Moreover, please refer to shown in Fig. 7 B, rely on adjustment masking device B (preventing glass Bg) can set field of illumination to light shield M, shine in regular turn on cut zone PAa～PAd with exposure light EL again.At this moment, the dim light zone that is adjusted in abutting connection with the bonding part of cutting apart pattern with the 15b of dim light portion of preventing glass Bg coincides, and then makes all exposure homogenizations in exposure area.

When the flatness of substrate P big (relatively poor) or optical projection system PL the depth of focus hour, be positioned at the depth of focus of optical projection system PL for the exposure-processed face of the substrate P that makes corresponding each view field, thereby the size of reduction view field (just increasing the number of cutting apart of cutting apart pattern), shown in Fig. 7 C, rely on to adjust the coincidence amount of preventing glass Bg, and with pattern P A be divided into for example be 6 cut apart pattern P Aa～PAf (cut zone).Moreover, when the bigger situation of the depth of focus of flatness of substrate P less (preferable) or optical projection system PL, can increase the size of view field, please refer to shown in Fig. 7 D, adjust preventing glass Bg, and with pattern P A be divided into for example be 2 cut apart pattern P Aa, PAb (cut zone).

Therefore, rely on to adjust preventing glass Bg, can be on 1 light shield M the size of the field of illumination of exposure light EL be set arbitrarily.Generally speaking, the adjustment of the size of this field of illumination size of the view field on the setting substrate P arbitrarily.Pattern with corresponding view field is engaged on the substrate P again, can on substrate P, form decide pattern.

In the above description, when deciding pattern P A form a plurality of cut apart pattern when, the size of the field of illumination of the exposure light EL of deciding pattern P A is set according to the size of the view field that sets, and form corresponding this view field size cut apart pattern.Generally speaking, in this preferred embodiment, when pattern is cut apart in formation, use masking device B (preventing glass Bg) to reduce employed light shield number.More very it for example is can set its cut zone by the pattern with the pattern repeatedly that is concatenated to form of pattern of a part etc. on the optional position.

In the explanation of above-mentioned first preferred embodiment and second preferred embodiment, use have decide when the light shield M of pattern P A, can rely on preventing glass Bg cut apart this pattern P A, also can utilize to have respectively and less cut apart pattern P Aa～PAd ((Ma～Mf) carries out exposure-processed to the light shield Ma～Md of cutting apart of PAa～PAf) to carry out exposure-processed.More very it, also can use in the lump have cut apart pattern cut apart light shield Ma～Mf and preventing glass Bg, further cut apart will cut apart pattern P Aa～PAf.

Moreover, the pattern repeatedly (picture element pattern) that is concatenated to form by the pattern with a part for example is after the pattern part repeatedly of cutting apart pattern P aa that uses shown in Fig. 5 B, again with cut apart pattern P Ab to the regional exposure on the substrate P when, use preventing glass Bg that the pattern part repeatedly of cutting apart pattern P aa is exposed.At last, in Fig. 5 A to Fig. 5 D, use 4 (or 6) light shields that pattern is repeatedly exposed, this repeatedly pattern can on employed 1 light shield, rely on adjustment and the exposure of preventing glass Bg, and carry out the exposure of large-scale exposure area.In this case, formerly can't be formed at 1 periphery pattern (wire pattern) on the light shield and can rely on the pattern repeatedly of the picture element pattern part on 1 light shield corresponding and get.

More very it, please refer to shown in Fig. 8 A, when exposing with pattern with wire pattern (periphery pattern) PA1 and picture element pattern (pattern repeatedly) PA2, shown in Fig. 8 B, prepare to have light shield M1, the M3 of corner portion of wire pattern PA1 and the light shield M2 that is formed with most of pattern of picture element pattern P A2.When carrying out picture element pattern P A2 exposure, on employed light shield M2, rely on preventing glass Bg to set the size of view field of the depth of focus of corresponding optical projection system PL, carry out exposure-processed again, so when forming picture element pattern P A2, the replacement of light shield M2 can be not need carried out, and then the good exposure-processed of operation can be carried out.

Moreover, in above-mentioned preferred embodiment, expose from being loaded on the light shield platform MST on the variable light shield 7 in order to the light shield M that carries out exposure-processed.In addition, also can change into being equipped on the variable light shield 7 and expose, promptly ought be arranged at when the light shield platform MST, variable light shield 7 is moved on the XY direction so that fixed light shield M (Ma～Md (Mf)) be disposed on the light path of exposure light EL.

And the exposure device of this preferred embodiment also goes for utilizing light shield M and the synchronization-moving mode of substrate P to carry out the type that the scans exposure device of exposure of the pattern P A of light shield M.

The purposes of exposure device is not limited in order to go up the liquid crystal exposure device that exposure forms the liquid crystal display device pattern at angle type glass plate (glass plate), and also going for for example is to go up semiconductor exposure device for making that exposure forms pattern or in order to the exposure device of manufacturing thin-film head (head) at wafer (wafer).

The multiplying power of optical projection system PL can wait multiplying power ground to dwindle and amplify.

In optical projection system PL, when the situation of the far infrared that uses excimer laser etc., use nitre material, quartz or fluorite etc. as seeing through far ultraviolet material.When using the situation of F2 laser or X ray, then use reflection flexion system or flexion system instead as optical system (light shield is also used the kind of reflection pattern instead).Moreover when using the situation of electron ray, optical system is then used instead by electronic lens (lens) and optical electron system that deflector constituted.And, also the light path by electron ray can be become vacuum state.

When on substrate stage PST or light shield platform MST, using the situation of linear motor (linear motor), can use the floating mo(u)ld top half of air of air bearing (air bearing) and use the magnetism of long-range navigation (Lorentz) power or reactance (reactance) power to float mo(u)ld top half.Moreover platform can also can guide pattern (guidelesstype) for the nothing of not establishing guiding for along guiding (guide) mobile pattern.

When the drive unit of platform uses the plane engine, magnetite unit (permanet magnet) and motor subelement can be connected in the either party of platform, also magnetite unit (permanet magnet) and motor subelement can be located at the opposing party of the all-moving surface side (benchmark (base)) of platform.

The reacting force that is taken place when substrate stage PST mobile can use the bed (the earth) of machinery avoid it as framework (frame) parts as relying on of being put down in writing on the Japanese patent laid-open 8-166475 communique.The present invention is also applicable to the exposure device with this structure.

The reacting force that is taken place when light shield platform MST mobile can use the bed (the earth) of machinery avoid it as frame parts as relying on of being put down in writing on the Japanese patent laid-open 8-330224 communique.The present invention is also applicable to the exposure device with this structure.

In above-mentioned, the various backup systems (sub-system) that the exposure device of preferred embodiment of the present invention such as claim of the present invention be described to contain each inscape in order to ensure fixed degree of accuracy, electrical degree of accuracy, optics degree of accuracy and make up manufacturing.For guaranteeing this various degree of accuracy, in the front and back of this combination, need carry out to various optical systems reach its optics degree of accuracy adjustment, various mechanical systems are reached the adjustment of its mechanical degree of accuracy, various electrical systems are reached the adjustment of the adjustment etc. of its electrical degree of accuracy.Before various backup systems were combined in the manufacture craft of exposure device, various backup systems also can be carried out each other combination manufacture craft.After the manufacture craft that is incorporated into exposure device of finishing various backup systems, carry out comprehensive adjustment, can guarantee the various degree of accuracy that exposure device is all.Moreover, also can be in clean room (clean room) temperature of the manufacturing of exposure device and cleanliness etc. be managed.

Semiconductor device (device) passes through the function of carrying out device as shown in Figure 9, the step 201 of the design of performance, with this device that designs is the step 202 that benchmark carries out the making of light shield (grating (reticule)), carry out the substrate that base material constituted (wafer by device, the step 203 of manufacturing glass plate), carry out that in the exposure device of aforementioned preferred embodiment the step 204 of the wafer-process of pattern exposure on wafer of grating is carried out Unit Installation and (comprise setting-out (dicing) manufacture craft, engage (bonding) manufacture craft, encapsulation (package) manufacture craft) step 205, check step 206 manufacturing such as grade and get.

Exposure method of the present invention and exposure device cording have following effect.

In the exposure device of the present invention, detect the flatness of substrate, again with this testing result Be benchmark, the size of the view field on the substrate is set, to carry out more efficiently essence The exposure-processed that exactness is good. And, need not carry out exposing to the sun of known light shield manufacture correction or test Photodevelopment is processed, and can be under the situation of high productivity, carries out accurately in mode more efficiently Spend good exposure-processed.

In the exposure device of the present invention, view field's size be set at corresponding optical projection The depth of focus of system is set. The depth of focus of for example working as employed optical projection system When big, can carry out exposure-processed to bigger view field, and can be in less exposure place Carry out exposure-processed under the situation of reason number of times, less light shield number, and then can be in cheaply Carry out more efficiently exposure-processed under the situation. On the other hand, when employed optical projection system The depth of focus of system hour can be carried out good the exposing to the sun of accuracy under littler view field Light is processed. So, owing to can more efficient mode set the better projection of corresponding flat degree Accuracy is carried out in mode more efficiently in zone, thereby can be when realizing high productivity Good exposure-processed.

In the exposure method and exposure device that the present invention puts down in writing, pattern is by a plurality of pattern institutes of cutting apart Form, these a plurality of patterns of cutting apart are engaged on the substrate, on this substrate, forming exposing patterns, And in the view field that has respectively the flatness of hoping, form respectively the corresponding pattern of cutting apart. So, can form the pattern that all is all pinpoint accuracy.

In the exposure method that the present invention puts down in writing, a plurality of patterns of cutting apart are by a plurality of light shields difference shapes Become, rely on when the exposure-processed that the replacement of this light shield carries out, can carry out good the exposing to the sun of operation Light is processed.

In the exposure method that the present invention puts down in writing, pattern has by the pattern frequentative with a part The repeatedly pattern that becomes. When continuing picture, do not need the pattern position of bonding part is advanced The aligning of row pinpoint accuracy, can be easily with bonding part and bonding part part in addition The position assimilation of arbitrary pattern form.

In the exposure method that the present invention puts down in writing, on the position that engages on the substrate with right The developing location of the optical projection system of answering combines, and so can make the live width of bonding part equal One. When combining with the developing location of corresponding optical projection system at the center of view field, Can make the bonding part can not be subjected at the periphery of view field the aberration of optical projection system (aberration) affect, have and prevent that the bonding part is subjected to the aberration institute shadow of optical projection system The effect of ringing.

Claims

1, a kind of exposure method, being applicable to exposes on a substrate in an optical projection system forms a method of patterning, and it is characterized in that: this method comprises:

Detect a flatness of this substrate;

Testing result with this flatness is a benchmark, and the size of the view field on this substrate is set.

2, exposure method as claimed in claim 1 is characterized in that: wherein the setting of the size of this view field is that the depth of focus by pairing this optical projection system sets.

3, exposure method as claimed in claim 1 is characterized in that: wherein this pattern is formed by a plurality of patterns of cutting apart, and on this substrate this pattern is exposed, and carries out a joint so that those cut apart pattern on this substrate.

4, exposure method as claimed in claim 2 is characterized in that: wherein this pattern is formed by a plurality of patterns of cutting apart, and on this substrate this pattern is exposed, and carries out a joint so that those cut apart pattern on this substrate.

5, exposure method as claimed in claim 3 is characterized in that: wherein those are cut apart pattern and are formed respectively by a plurality of light shields.

6, exposure method as claimed in claim 4 is characterized in that: wherein those are cut apart pattern and are formed respectively by a plurality of light shields.

7, exposure method as claimed in claim 1 is characterized in that: wherein this pattern has by together a part of pattern was concatenated to form a pattern repeatedly.

8, exposure method as claimed in claim 2 is characterized in that: wherein this pattern has by together a part of pattern was concatenated to form a pattern repeatedly.

9, exposure method as claimed in claim 3 is characterized in that: wherein this pattern has by together a part of pattern was concatenated to form a pattern repeatedly.

10, exposure method as claimed in claim 4 is characterized in that: wherein this pattern has by together a part of pattern was concatenated to form a pattern repeatedly.

11, exposure method as claimed in claim 5 is characterized in that: wherein this pattern has by together a part of pattern was concatenated to form a pattern repeatedly.

12, exposure method as claimed in claim 6 is characterized in that: wherein this pattern has by together a part of pattern was concatenated to form a pattern repeatedly.

13, as claim 3 arbitrary described exposure method in the 12nd, it is characterized in that: wherein the position to this joint is detected on this substrate, and the position to the testing result that should engage of this substrate is combined with a developing location of this optical projection system.

14, a kind of exposure device, being applicable to exposes on a substrate in an optical projection system forms the device of a pattern, and it is characterized in that: this device comprises:

One pick-up unit is in order to detect a flatness of this substrate;

One setting device is a benchmark with the testing result of this flatness, and the size of the view field on this substrate is set.

15, exposure device as claimed in claim 14 is characterized in that: wherein this setting device is set the size of this view field by a depth of focus of pairing this optical projection system.

16, as claim 14 or the 15th described exposure device, it is characterized in that: also comprise an exposure-control device, have this pattern and formed, and on this substrate, this pattern is exposed, on this substrate, engage so that those cut apart pattern by a plurality of patterns of cutting apart.