CN1333259C - Test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode - Google Patents
Test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode Download PDFInfo
- Publication number
- CN1333259C CN1333259C CNB2004100811826A CN200410081182A CN1333259C CN 1333259 C CN1333259 C CN 1333259C CN B2004100811826 A CNB2004100811826 A CN B2004100811826A CN 200410081182 A CN200410081182 A CN 200410081182A CN 1333259 C CN1333259 C CN 1333259C
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- laser chip
- electrode
- high frequency
- terrace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The present invention relates to a test desk for high-frequency characteristics of a semi-conductor laser chip with a nonco-planar electrode, which is characterized in that the present invention comprises a conductor desk with a step structure and a scale for measuring fall, wherein the conductor desk comprises a horizontal lower step surface and an inclined upper step surface; the scale for measuring fall is made on the upper step surface. When the test desk is utilized, a coplanar micro-wave probe can be used for directly measuring laser chips with nonco-planar electrodes conveniently, and adverse effects brought by the use of heat sink and gold wires are avoided.
Description
Technical field
The invention belongs to field of optoelectronic devices, is a kind of test board that the auxiliary high frequency microwave probe is measured the semiconductor laser chip of non-coplanar electrodes that is used for.
Background technology
The high speed light source is one of parts the most key in the optical fiber telecommunications system as the generating device of light signal.High speed semiconductor laser is a topmost light source in the present optical communication system.The high frequency performance of semiconductor laser is determining the transfer rate of optical communication system to a certain extent, so the accurate measurement of noise spectra of semiconductor lasers high frequency characteristics just becomes very important.
Semiconductor laser chip is rectangular structure mostly, and its upper and lower surface is coated with metal electrode, corresponding the P utmost point and the N utmost point of laser diode.Yet at present commercial high-frequency microwave probe all is coplanar structure usually, can't make the two poles of the earth of probe directly touch the two poles of the earth of chip simultaneously.Usual way is earlier chip N extreme pressure to be welded in one to be coated with on the heat sink electrode of coplane gold electrode, draws a spun gold to another heat sink electrode from the chip P utmost point then, thereby can measure non-coplanar chip from the coplanar electrodes on heat sink.
But this method has the deficiency of following two aspects: one, because from the measured die response of heat sink coplanar electrodes, to comprise the response of the parasitic elements of introducing by heat sink and spun gold, and the influence of these parasitic elements is clearly, therefore measures not accurate enough.Obtain chip and respond really, need that also measurement result is done a series of calibration and deduct relevant this feasible complexity that becomes of measuring that influences; Its two, the process of pressure welding chip and spun gold has increased complexity and the impaired possibility of measuring of chip, in case and the chip pressure welding on heat sink, just can't take off, these have all caused very big inconvenience to real work.
Summary of the invention
The objective of the invention is to, a kind of test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode is provided, assisting down of this kind test board, the microwave co-planar probe can directly be carried out high frequency measurement to non-coplane chip of laser, has avoided former method to adopt weak point heat sink and spun gold and bond technology.
The technical scheme that the present invention solves its technical matters is:
A kind of test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode of the present invention is characterized in that, comprising:
One has the conductor platform of ledge structure, and this conductor platform comprises the leave from office terrace of level and the terrace of appearing on the stage of inclination;
One drop scale, this drop scale is produced on the terrace of appearing on the stage.
The material of wherein said conductor platform is a metallic copper.
Be coated with the indium metal layer on the leave from office terrace of wherein said level.
The terrace of appearing on the stage of wherein said inclination is one along step dip plane longitudinally, and it is gradually changed with the position is different with drop between the leave from office terrace, and this fall range is contained the thickness range of semiconductor laser chip.
The fall range that wherein said drop scale is indicated is contained the thickness range of semiconductor laser chip.
The beneficial effect of this scheme is: forward the N electrode of semi-conductor chip to P electrode coplane table top by the conductor ledge structure; Adopt the tilting table terrace simultaneously, can adapt to the variety classes and the thickness chip of laser of all thickness; Can read the drop of this place's step by the scale on the step surface; The indium metal layer that is plated on the step surface guaranteed thermo-contact good between chip and the test board and electrically contacted, the damage of having avoided welding technology to bring to chip, and can measure repeatedly.Utilize this test board like this, can carry out directly, measure easily, avoided using heat sink and spun gold adverse effect with the chip of laser of coplane microwave probe to various non-coplanar electrodes.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with drawings and Examples to the detailed description of the invention as after, wherein:
Fig. 1 is the stereoscopic figure of this scheme test board;
Fig. 2 is the course of work synoptic diagram of Fig. 1 test board.
1. is the conductor platforms that have ledge structure among the figure; 2. be the leave from office terrace of level, be coated with the indium metal layer on it; 3. be the terrace of appearing on the stage that tilts; 4. be the drop scale; 5. be semiconductor laser chip to be measured; 6. be high frequency coplane microwave probe.
Embodiment
See also Fig. 1 and Fig. 2, a kind of test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode of the present invention comprises:
One has the conductor platform 1 of ledge structure, and this conductor platform 1 comprises the leave from office terrace 2 of level and the terrace 3 of appearing on the stage that tilts; The material of described conductor platform 1 is a metallic copper; Be coated with the indium metal layer on the leave from office terrace 2 of described level; The terrace 3 of appearing on the stage of described inclination is one along step dip plane longitudinally, and it is gradually changed with the position is different with drop between the leave from office terrace 2; This fall range is contained the thickness range of semiconductor laser chip;
One drop scale 4, this drop scale 4 are produced on the terrace 3 of appearing on the stage; The fall range that described drop scale 4 is indicated is contained the thickness range of semiconductor laser chip.
Wherein the degree of tilt of the terrace 3 of appearing on the stage of this inclination is by the thickness range decision of the high-speed laser chip of required measurement.In general, the scope of chip of laser is at 90-140 μ m, and the fall range of its requirement is about 50 μ m, therefore when the length of making this test board is 5mm, goes up measurement requirement as long as the inclination angle tangent of the terrace of appearing on the stage of this inclination greater than 0.01, can satisfy;
This drop scale 4 is accurately indicated the drop of two steps up and down of relevant position, its mark value determines jointly that by its position and the terrace inclination angle of appearing on the stage its size equals [(minimum value of up/down steps drop)+(this position is with the distance of up/down steps drop smallest end) * (inclination angle tangent)].
Consult Fig. 2, the course of work of the present invention is:
1. according to the thickness data of chip of laser 5, on drop scale 4, find the position of the drop that equates with thickness;
2. chip is placed on one side, this position, makes the spacing of the spacing of its P electrode centers position and the terrace 3 of appearing on the stage less than co-planar probe two needle points near step;
3. live the P utmost point of chip of laser with an extreme pressure of coplane high-frequency microwave probe 6, another utmost point of probe is then just in time pushed down the terrace 3 of appearing on the stage, and can carry out the measurement of high frequency characteristics to laser instrument; The data that obtain are chip high frequency characteristics data accurately.
4. finish after the test of one piece of chip, it can be taken off.Repeat the described process of 1-3, can carry out the test of other high-speed laser chips of different-thickness.
Good conductor material ledge structure with heat-conductivity conducting.Its leave from office terrace is a level, and is in the test process that chip of laser is placed thereon, and the exiting surface of laser instrument is vertical with step surface; Its terrace of appearing on the stage is a dip plane, and vergence direction is parallel with light direction, thereby causes the different drop of up/down steps face at vertical diverse location of test board; Be manufactured with the scale of indicating this drop at the edge of the terrace of appearing on the stage.Like this, when the fall range of two step surfaces has been contained the thickness range of various semiconductor laser chips, the semiconductor laser chip of any thickness can find certain position by the reading by the drop scale on test board, make the drop of up/down steps face identical with the thickness of chip.Chip is placed on this position near one side of step, and the two poles of the earth of coplane microwave probe can contact the probe station P utmost point at terrace and chip top of appearing on the stage simultaneously respectively like this, thereby can directly carry out the high frequency characteristics measurement to chip; Be coated with the indium metal layer on its leave from office terrace, guaranteed the good contact of chip under test, thereby need not chips welding on test board with test board; Whole test board is the good conductor of heat and electricity, thereby very little to the high-frequency test influence, can directly obtain chip high frequency performance accurately by measuring.
Claims (5)
1, a kind of test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode is characterized in that, comprising:
One has the conductor platform of ledge structure, and this conductor platform comprises the leave from office terrace of level and the terrace of appearing on the stage of inclination;
One drop scale, this drop scale is produced on the terrace of appearing on the stage.
2, test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode as claimed in claim 1 is characterized in that, the material of wherein said conductor platform is a metallic copper.
3, test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode as claimed in claim 1 is characterized in that, is coated with the indium metal layer on the leave from office terrace of wherein said level.
4, test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode as claimed in claim 1, it is characterized in that, the terrace of appearing on the stage of wherein said inclination is one along step dip plane longitudinally, it is gradually changed with the position is different with drop between the leave from office terrace, and this fall range is contained the thickness range of semiconductor laser chip.
5, test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode as claimed in claim 1 is characterized in that, the fall range that wherein said drop scale is indicated is contained the thickness range of semiconductor laser chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100811826A CN1333259C (en) | 2004-10-11 | 2004-10-11 | Test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100811826A CN1333259C (en) | 2004-10-11 | 2004-10-11 | Test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1760679A CN1760679A (en) | 2006-04-19 |
| CN1333259C true CN1333259C (en) | 2007-08-22 |
Family
ID=36706828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100811826A Expired - Fee Related CN1333259C (en) | 2004-10-11 | 2004-10-11 | Test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1333259C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01228189A (en) * | 1988-02-01 | 1989-09-12 | Alcatel Nv | Method and apparatus for determining characteristics of optical parameter of semiconductor laser |
| CN1238566A (en) * | 1998-02-19 | 1999-12-15 | 日本电气株式会社 | Semiconductor photo detector and manufacturing method thereof |
-
2004
- 2004-10-11 CN CNB2004100811826A patent/CN1333259C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01228189A (en) * | 1988-02-01 | 1989-09-12 | Alcatel Nv | Method and apparatus for determining characteristics of optical parameter of semiconductor laser |
| CN1238566A (en) * | 1998-02-19 | 1999-12-15 | 日本电气株式会社 | Semiconductor photo detector and manufacturing method thereof |
Non-Patent Citations (5)
| Title |
|---|
| 光探测器芯片的高频特性测量 张胜利，孙建伟，刘宇，祝宁华，中国激光，第31卷第7期 2004 * |
| 光通信用10Gbit/s激光器模块及关键技术 祝宁华，谢亮，中国有色金属学报，第14卷第1期 2004 * |
| 电吸收调制器和DFB激光器集成器件的测量 王幼林，刘宇，孙建伟，祝宁华，半导体学报，第24卷第9期 2003 * |
| 电吸收调制器和DFB激光器集成器件的测量 王幼林，刘宇，孙建伟，祝宁华，半导体学报，第24卷第9期 2003;高速光探测器封装的优化设计 张胜利，刘宇，孙建伟，祝宁华，光学学报，第24卷第5期 2004;光探测器芯片的高频特性测量 张胜利，孙建伟，刘宇，祝宁华，中国激光，第31卷第7期 2004;光通信用10Gbit/s激光器模块及关键技术 祝宁华，谢亮，中国有色金属学报，第14卷第1期 2004 * |
| 高速光探测器封装的优化设计 张胜利，刘宇，孙建伟，祝宁华，光学学报，第24卷第5期 2004 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1760679A (en) | 2006-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8822238B2 (en) | Apparatus and method for predetermined component placement to a target platform | |
| US7684058B2 (en) | Electrooptical distance measuring device | |
| CN110333469B (en) | Target point calculation method for flying probe test | |
| CN115144163B (en) | Automatic LIV (laser induced breakdown voltage) testing method for lighting semiconductor laser module in subareas | |
| US7208966B2 (en) | Contact probe, measuring pad used for the contact probe, and method of manufacturing the contact probe | |
| CN1333259C (en) | Test desk for high frequency characteristics of semiconductor laser chip with noncoplanar electrode | |
| US5617988A (en) | Device for measuring the height of a solder wave | |
| KR100494471B1 (en) | A method for measuring a dielectric constant of a printed circuit board for RIMM | |
| CN106950011B (en) | A kind of pressure sensor test device | |
| US20020146920A1 (en) | Method of soldering contact pins and the contact pins | |
| CN115566109A (en) | Die bonding method and device and electronic element | |
| CN105786218A (en) | Electromagnetic pen, and electromagnetic pen resonance frequency regulation system and method | |
| US6803520B1 (en) | High speed to-package external interface | |
| US9702906B2 (en) | Non-permanent termination structure for microprobe measurements | |
| CN100344982C (en) | Test fixture in high frequency measuring chip of laser in structure of monocoplanar electrode | |
| CN102565468B (en) | Kelvin test slide stage | |
| JP5720199B2 (en) | Manufacturing method of optical module | |
| CN216898779U (en) | Optical fiber system for measuring depth of inner layer of printed circuit board | |
| CN216622581U (en) | Photoelectric chip testing device | |
| CN216523712U (en) | Periscopic optical structure for measuring depth of inner layer of printed circuit board | |
| CN114256730A (en) | Chip testing device | |
| CN114791605A (en) | Optical system for measuring depth of inner layer of printed circuit board | |
| CN220272429U (en) | Semiconductor test apparatus | |
| CN219892607U (en) | Semiconductor chip packaging test fixture | |
| CN115825074A (en) | Chip failure positioning device and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070822 Termination date: 20091112 |