CN100344982C - Test fixture in high frequency measuring chip of laser in structure of monocoplanar electrode - Google Patents
Test fixture in high frequency measuring chip of laser in structure of monocoplanar electrode Download PDFInfo
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- CN100344982C CN100344982C CNB2004100811830A CN200410081183A CN100344982C CN 100344982 C CN100344982 C CN 100344982C CN B2004100811830 A CNB2004100811830 A CN B2004100811830A CN 200410081183 A CN200410081183 A CN 200410081183A CN 100344982 C CN100344982 C CN 100344982C
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- laser
- chip
- anchor clamps
- coplanar electrodes
- measurement
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Abstract
The present invention relates to a test fixture in high frequency measuring chips of a laser in a structure of a mono-coplanar electrode, which is characterized in that the present invention comprises a plurality of flat plates for conductive bodies, wherein each flat plate for a conductive body is rectangular; the flat plates for conductive bodies are mutually stacked and welded to form a multi-step structure, and the drop height of the multi-step structure is different.
Description
Technical field
The invention belongs to field of optoelectronic devices, is a kind of anchor clamps that are used to measure the high speed semiconductor laser chip of non-coplanar electrodes.
Background technology
The high speed light source is one of parts the most key in the optical fiber telecommunications system as the generating device of light signal.High speed semiconductor laser is a topmost light source in the present optical communication system.The high frequency performance of semiconductor laser is determining the transfer rate of optical communication system to a certain extent, so the accurate measurement of noise spectra of semiconductor lasers high frequency characteristics just becomes very important.
Semiconductor laser chip is rectangular structure mostly, and its upper and lower surface is coated with metal electrode, corresponding the P utmost point and the N utmost point of laser diode.Yet at present commercial high-frequency microwave probe all is coplanar structure usually, can't make the two poles of the earth of probe directly touch the two poles of the earth of chip simultaneously.Usual way is earlier chip N extreme pressure to be welded in one to be coated with on the heat sink electrode of coplane gold electrode, draws a spun gold to another heat sink electrode from the chip P utmost point then, thereby can measure non-coplanar chip from the coplanar electrodes on heat sink.
But this method has the deficiency of following two aspects: one, because from the measured die response of heat sink coplanar electrodes, to comprise the response of the parasitic elements of introducing by heat sink and spun gold, and the influence of these parasitic elements is clearly, therefore measures not accurate enough.Obtain chip and respond really, need that also measurement result is done a series of calibration and deduct relevant influence, this makes to measure and becomes complicated; Its two, the process of pressure welding chip and spun gold has increased complexity and the impaired possibility of measuring of chip, in case and the chip pressure welding on heat sink, just can't take off, these have all caused very big inconvenience to real work.
Summary of the invention
The objective of the invention is to, a kind of high-frequency test anchor clamps of measuring non-coplanar electrodes chip of laser are provided, assisting down of these anchor clamps, the coplane microwave probe can directly carry out high frequency measurement to non-coplanar electrodes chip of laser, has avoided former method to adopt weak point heat sink and spun gold and bond technology.
The technical scheme that the present invention solves its technical matters is:
A kind of high-frequency test anchor clamps of measuring non-coplanar electrodes chip of laser of the present invention is characterized in that, comprising:
A plurality of conductor plates, this conductor plate are rectangle, and these a plurality of conductor plates stack welding mutually and constitute many ledge structures;
The drop of these many ledge structures is all inequality.
The material of wherein said conductor plate is gold-plated devitrified glass.
The progression of wherein said many ledge structures is 2 to 15 grades.
Wherein said drop is ascending or descending.
Two adjacent step drops of wherein said many ledge structures differ 5 μ m.
Each step surface of wherein said many ledge structures is coated with the indium metal layer, and is manufactured with the respective step sequence number.
The beneficial effect of this scheme is: forwards to and the basic coplane of its P electrode by the N electrode of conductor ledge structure semi-conductor chip, thus the influence of having avoided using heat sink and spun gold and having brought to measurement; The high frequency characteristics that the multistage ledge structure of different drops makes these anchor clamps can adapt to the chip of laser of various different-thickness is measured; The indium layer on ledge structure surface makes chip need not welding and can well contact with the test fixture maintenance; The exiting surface of chip can be tried one's best near the edge of this anchor clamps ledge structure, and this helps the optically-coupled in the test process.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the outside drawing of this scheme test fixture;
Fig. 2 is the organigram of this scheme test fixture;
Fig. 3 is the course of work synoptic diagram of this scheme test fixture.
1-10 indicates in the ledge structure of this test fixture order of the step from low to high among Fig. 1; A, b represent to constitute two gold-plated devitrified glass flat boards of ledge structure respectively among Fig. 2; 1 expression coplane microwave probe among Fig. 3,2 expressions non-coplanar electrodes semiconductor laser chip to be measured, it is placed on the 5th grade of step of test fixture.
Embodiment
See also shown in Figure 1ly, a kind of high-frequency test anchor clamps of measuring non-coplanar electrodes chip of laser of the present invention comprise:
A plurality of conductor plates 10, this conductor plate 10 is a rectangle, these a plurality of conductor plates 10 stack welding mutually and constitute many ledge structures 20; The material of described conductor plate 10 is gold-plated devitrified glass; The progression of described many ledge structures 20 is 2 to 15 grades;
The drop of these many ledge structures 20 is all inequality; Many ledge structures 20 that described drop is all different, it is ascending or descending; Two adjacent step drops of described many ledge structures 20 differ 5 μ m; Each step surface of described many ledge structures 20 is coated with the indium metal layer, and is manufactured with the respective step sequence number.
See also shown in Figure 2, the manufacturing synoptic diagram of a kind of non-coplanar electrodes semiconductor laser test fixture of the present invention, comprising:
Step 1. utilizes microcrystal glass material to make conductor plate 10, and its surface is plated certain thickness gold layer.By microcrystal glass material being ground the control of process and gold-plated time, obtain the gold-plated devitrified glass flat board of different-thickness;
Step 3. utilize two gold-plated devitrified glass conductor plates 10 that solder technology will complete according to the order of sequence the number preface be welded into ledge structure.This promptly constitutes a unit in many ledge structures 20;
Thereby the ledge structure described in step 4. repetitive construct 3 constitutes many steps, and plates the indium metal layer on each step surface.
Consult Fig. 3, the course of work of the present invention is:
1. according to chip of laser 2 thickness datas, determine which grade step it should be placed on to measure.As chip of laser thickness is 108 μ m, then should be placed on the 5th grade of step;
2. chip 2 is placed on this grade step submarginal one side of trying one's best, makes its P electrode centers position and the 5th grade of step appear on the stage the spacing of terrace less than the spacing of coplane microwave probe two needle points;
3. live the P utmost point of chip of laser with an extreme pressure of coplane high-frequency microwave probe 1, another utmost point of probe is then just in time pushed down the 5th grade of step terrace of appearing on the stage, and can carry out the measurement of high frequency characteristics to laser instrument; The data that obtain are chip high frequency characteristics data accurately;
4. finish after the test of one piece of chip, it can be taken off.Repeat the described process of 1-3, can carry out the test of other high-speed laser chips of different-thickness.
The present invention stacks the devitrified glass flat board that the surface is coated with the gold layer and weld, be made into many ledge structures, drop by step is transformed into position with the basic coplane of P electrode with the N electrode of semiconductor laser chip, chip is placed on this step surface, the two poles of the earth of coplane microwave probe can contact the P utmost point at step surface and chip top simultaneously respectively, measure thereby can directly carry out high frequency characteristics to chip; The thickness difference of each devitrified glass flat board, thereby step at different levels has different drops, from minimum one-level step upwards, every rising one-level step, the drop of step increases 5 μ m.Drop when minimum one-level step is 80 μ m like this, and step adds up to 10 grades, and then the drop of step at the highest level is 140 μ m.This fall range can adapt to the thickness of most chip of laser.Though chip thickness may be unequal with the step drop, both are 2.5 μ m to the maximum at difference, and general commercial coplane microwave probe can bear this maximum error; Be manufactured with the drop mark on each step surface, by this mark can determine easily a certain chip should be placed on test on which rank of step the most suitable; Be coated with certain thickness indium metal layer on the step surface, can guarantee chip under test, just can measure thereby need not welding with the good contact between these anchor clamps; Whole test fixture is the good conductor of heat and electricity, thereby very little to the high-frequency test influence, and the high frequency response that measures is chip high frequency performance accurately.
Claims (6)
1, a kind of high-frequency test anchor clamps of measuring non-coplanar electrodes chip of laser is characterized in that, comprising:
A plurality of conductor plates, this conductor plate are rectangle, and these a plurality of conductor plates stack welding mutually and constitute many ledge structures;
The drop of these many ledge structures is all inequality.
2, the high-frequency test anchor clamps of the non-coplanar electrodes chip of laser of measurement as claimed in claim 1 is characterized in that, the material of wherein said conductor plate is gold-plated devitrified glass.
3, the high-frequency test anchor clamps of the non-coplanar electrodes chip of laser of measurement as claimed in claim 1 is characterized in that, the progression of wherein said many ledge structures is 2 to 15 grades.
4, the high-frequency test anchor clamps of the non-coplanar electrodes chip of laser of measurement as claimed in claim 1 is characterized in that, wherein said drop is ascending or descending.
5, the high-frequency test anchor clamps of the non-coplanar electrodes chip of laser of measurement as claimed in claim 4 is characterized in that, two adjacent step drops of wherein said many ledge structures differ 5 μ m.
6, the high-frequency test anchor clamps of the non-coplanar electrodes chip of laser of measurement as claimed in claim 4 is characterized in that, each step surface of wherein said many ledge structures is coated with the indium metal layer, and are manufactured with the respective step sequence number.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100811830A CN100344982C (en) | 2004-10-11 | 2004-10-11 | Test fixture in high frequency measuring chip of laser in structure of monocoplanar electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100811830A CN100344982C (en) | 2004-10-11 | 2004-10-11 | Test fixture in high frequency measuring chip of laser in structure of monocoplanar electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1760687A CN1760687A (en) | 2006-04-19 |
| CN100344982C true CN100344982C (en) | 2007-10-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100811830A Expired - Fee Related CN100344982C (en) | 2004-10-11 | 2004-10-11 | Test fixture in high frequency measuring chip of laser in structure of monocoplanar electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100344982C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01228189A (en) * | 1988-02-01 | 1989-09-12 | Alcatel Nv | Method and apparatus for determining characteristics of optical parameter of semiconductor laser |
| CN1238566A (en) * | 1998-02-19 | 1999-12-15 | 日本电气株式会社 | Semiconductor photo detector and manufacturing method thereof |
-
2004
- 2004-10-11 CN CNB2004100811830A patent/CN100344982C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01228189A (en) * | 1988-02-01 | 1989-09-12 | Alcatel Nv | Method and apparatus for determining characteristics of optical parameter of semiconductor laser |
| CN1238566A (en) * | 1998-02-19 | 1999-12-15 | 日本电气株式会社 | Semiconductor photo detector and manufacturing method thereof |
Non-Patent Citations (4)
| Title |
|---|
| 光探测器芯片的高频特性测量 张胜利，孙建伟，刘宇，祝宁华，中国激光，第31卷第7期 2004 * |
| 光通信用10Gbit/s激光器模块及关键技术 祝宁华，谢亮，中国有色金属学报，第14卷第1期 2004 * |
| 电吸收调制器和DFB激光器集成器件的测量 王幼林，刘宇，孙建伟，祝宁华，半导体学报，第24卷第9期 2003 * |
| 高速光探测器封装的优化设计 张胜利，刘宇，孙建伟，祝宁华，光学学报，第24卷第5期 2004 * |
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| Publication number | Publication date |
|---|---|
| CN1760687A (en) | 2006-04-19 |
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