CN1320813A - 硅材料机械强度的测试方法 - Google Patents
硅材料机械强度的测试方法 Download PDFInfo
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- CN1320813A CN1320813A CN 00107135 CN00107135A CN1320813A CN 1320813 A CN1320813 A CN 1320813A CN 00107135 CN00107135 CN 00107135 CN 00107135 A CN00107135 A CN 00107135A CN 1320813 A CN1320813 A CN 1320813A
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- 239000002210 silicon-based material Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000012360 testing method Methods 0.000 title claims description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 2
- 238000005498 polishing Methods 0.000 abstract description 3
- 238000007373 indentation Methods 0.000 abstract 2
- 230000006837 decompression Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- XYOVOXDWRFGKEX-UHFFFAOYSA-N azepine Chemical compound N1C=CC=CC=C1 XYOVOXDWRFGKEX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009666 routine test Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
本发明公开的硅材料机械强度的测量方法是以测量硅材料的位错滑移长度来确定其机械强度的,依次包括如下步骤:首先将从硅材料上割取的试样硅片进行抛光,除去表面损伤层;然后用硬度计压头在硅片表面制造压痕,压痕四周引入位错;再在保护气中对硅片进行热处理,使位错发生滑移;接着冷却硅片,用化学腐蚀液腐蚀,显示位错的滑移;最后测量位错滑移长度。应用该方法简便易行,便于从微观角度确定杂质对硅材料机械强度的影响。
Description
本发明涉及半导体硅材料机械强度的测试方法。
随着大规模集成电路的迅速发展,对硅片的质量要求也越来越高,硅材料的机械强度直接影响到硅片和集成电路的制造成品率。硅材料机械强度高,则硅片在切片、磨片和抛光加工过程中的碎片率低,同时,硅片容忍热应力的能力大,可阻止硅片翘曲,提高集成电路成品率,降低生产成本。但至今还未有专门测试硅材料机械强度的方法,由于硅材料是脆性材料,目前采取套用脆性材料机械强度测试的通用方法,如:三点弯法,高温拉伸法等,但这些方法需要设备复杂,制样困难,实验数据分散,同时不能从微观角度精确了解硅晶体中杂质对材料机械强度的影响。
鉴于上述,本发明的目的是提供一种硅材料机械强度的测试方法,它简便易行。
本发明的方法是以测量硅材料的位错滑移长度来确定其机械强度的,依次包括如下步骤:
1、将从硅材料上割取的试样硅片进行抛光,除去表面损伤层;
2、用硬度计压头在硅片表面制造压痕,压痕四周引入位错;
3、在保护气中对硅片进行热处理,使位错发生滑移;
4、冷却硅片,用化学腐蚀液腐蚀,显示位错的滑移;
5、测量位错滑移长度。
试验表明,硅片上的位错滑移长度与压力无关,硬度计压头施于硅片的压力以使硅片上能产生位错,不破粹即可,通常,压力为1~10000克。
以下结合实例对本发明作进一步描述。
以具有同样热历史和相同氧碳浓度的减压充氮直拉硅单晶和普通直拉硅单晶为例,测试机械强度步骤如下,首先从上述被测硅材料分别割取500μm厚度的硅片,并进行抛光,去除表面的加工损伤层;可以采用机械抛光,也可以用化学抛光。然后用维氏硬度计压头在硅片表面制造压痕,在压痕四周引入位错;再在氮气或氩气保护气体中对硅片进行热处理,一般热处理温度为850℃~1200℃,使位错发生滑移;接着冷却硅片,用化学腐蚀液腐蚀,显示位错的滑移,化学腐蚀液可以用氢氟酸和浓度为50%的铬酸按1∶1比例配制成的sirtl液;最后用金相显微镜或扫描电镜测量位错滑移长度,据此可确定硅材料的机械强度。本例测试结果为减压充氮直拉硅单晶比普通直拉硅单晶的位错滑移长度短,表明前者的机械强度大于后者,也说明了氮杂质能提高硅材料的机械强度。
综上可见,本发明提供的硅材料机械强度的测试方法简便易行,应用该方法便于从微观角度确定杂质对硅材料机械强度的影响。
Claims (3)
1.硅材料机械强度的测试方法,其特征是以测量位错滑移长度确定机械强度,该方法依次包括如下步骤:
1)将从硅材料上割取的试样硅片进行抛光,除去表面损伤层;
2)用硬度计压头在硅片表面制造压痕,压痕四周引入位错;
3)在保护气中对硅片进行热处理,使位错发生滑移;
4)冷却硅片,用化学腐蚀液腐蚀,显示位错滑移;
5)测量位错滑移长度。
2.按权利要求1所述的硅材料机械强度的测试方法,其特征是所说的化学腐蚀液是氢氟酸和浓度为50%的铬酸按1∶1比例配制成的sirtl液。
3.按权利要求1所述的硅材料机械强度的测试方法,其特征是所说的保护气是氮气或氩气。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101776551B (zh) * | 2010-02-09 | 2011-07-20 | 马德军 | 仪器化微米压入测试材料单轴强度均值的方法 |
CN102466588A (zh) * | 2010-11-07 | 2012-05-23 | 山西太钢不锈钢股份有限公司 | 一种比较金属材料间隙原子含量的方法 |
CN106018113A (zh) * | 2016-07-27 | 2016-10-12 | 晶科能源有限公司 | 一种气压法测量硅片机械强度的装置 |
CN106018112A (zh) * | 2016-07-27 | 2016-10-12 | 晶科能源有限公司 | 一种水压法测量硅片机械强度的装置 |
CN104458463B (zh) * | 2014-11-04 | 2017-05-10 | 沈阳航空航天大学 | 一种材料亚表面加工损伤层厚度的评估方法 |
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2000
- 2000-04-21 CN CN 00107135 patent/CN1099027C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101776551B (zh) * | 2010-02-09 | 2011-07-20 | 马德军 | 仪器化微米压入测试材料单轴强度均值的方法 |
CN102466588A (zh) * | 2010-11-07 | 2012-05-23 | 山西太钢不锈钢股份有限公司 | 一种比较金属材料间隙原子含量的方法 |
CN102466588B (zh) * | 2010-11-07 | 2013-06-12 | 山西太钢不锈钢股份有限公司 | 一种比较金属材料间隙原子含量的方法 |
CN104458463B (zh) * | 2014-11-04 | 2017-05-10 | 沈阳航空航天大学 | 一种材料亚表面加工损伤层厚度的评估方法 |
CN106018113A (zh) * | 2016-07-27 | 2016-10-12 | 晶科能源有限公司 | 一种气压法测量硅片机械强度的装置 |
CN106018112A (zh) * | 2016-07-27 | 2016-10-12 | 晶科能源有限公司 | 一种水压法测量硅片机械强度的装置 |
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