CN1318203A - Emitter, emitter fabricating method, and cold electron emitting device fabricating method - Google Patents
Emitter, emitter fabricating method, and cold electron emitting device fabricating method Download PDFInfo
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- CN1318203A CN1318203A CN00801476A CN00801476A CN1318203A CN 1318203 A CN1318203 A CN 1318203A CN 00801476 A CN00801476 A CN 00801476A CN 00801476 A CN00801476 A CN 00801476A CN 1318203 A CN1318203 A CN 1318203A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Abstract
A cold electron emitting device comprising an emitter fabricated by etching a columnar polycrystalline film (2) formed by growing columnar crystal grains along the same crystal axis on a substrate (1). Even if multiple emitters are fabricated in such a cold electron emitting device, the uniformness of the shapes of the emitters is of good reproducibility, and the variation of electron emitting characteristic due to variation of the shapes of emitters is little, thereby fabricating a cold electron emitting device having a uniform emitting characteristic and formed on a large-area substrate.
Description
Technical field
The present invention relates to can be used as reflector and manufacture method thereof that cold electron emission that the electron source of various electron beam use devices such as plane formula image display apparatus or various transducer, high-frequency generator, ultrahigh-speed device, electron microscope, electron beam lithography system uses is used.
Background technology
The cold electronics electron source of existing electric field transmitted formula display unit etc. can use in negative electrode one side and form a plurality of height and the bottom surface diameter is the electron source of the conical extremely small reflector of 1 micron front and back.Above-mentioned reflector can adopt the way that electric field is concentrated on its head portion to obtain electric current.Its essential structure, people know the method that is proposed by C.A.Spint etc. (Journalof Applied Physics, Vol.47, No.12, p.5248,1976).Its electron emission characteristic is owing to because of the shape of reflector head portion changes, so want to make electron emission characteristic to become to equating, it is desirable to form equably the shape, particularly end shape of a plurality of reflectors in each reflector.
In addition, as the problem of the maximum of this reflector, be the problem that electron emission amount changes in time.The reflector manufacture method that is used for addressing this problem, rough segmentation get up to have following 2 kinds of methods.
A method is to form metallic radiator in the glass substrate top, and big resistance in series is connected on this reflector, stablizes emission current.In addition,, form reflector and transistor, emission current is controlled energetically by means of this transistor with semiconductor as another kind of method.Because this method power consumption little trick speed is fast, so development from now on can be expected.
Forming under the situation of reflector 3 kinds of emitter materials films enumerating below can considering with above-mentioned semiconductor.A kind of is not have the grain boundary, all has the single crystal film of constant direction in all part intercrystalline orientation, secondly is that the scattered here and there crystal grain of crystal orientation concentrates on together polycrystalline film, another is the amorphous film with crystal structure.If within above-mentioned 3 kinds of cold electron emission device materials, consider to form the transistor of characteristic good, then to use single crystal film or polycrystalline film to be advisable.
Under the situation of using single crystal film,,, thereby can make the good reflector of homogeneity so the isotropism of wet etching or reactive ion etching or anisotropic etching speed are the same owing to crystal orientation becomes to constant direction does not have the grain boundary.But single crystal film is because cost is high and can not make in the large-area substrates top of cheap glass substrate etc., so present situation is the shortage practicality.
On the other hand, with under the situation of using single crystal film relatively, polycrystalline film low cost, and can making in large-area substrate top at low temperatures is so be suitable for the small electron source of display unit etc.
Figure 10 shows the profile of above-mentioned existing polycrystalline film substrate, and Figure 11 is the profile with the reflector of the polycrystalline film manufacturing of Figure 10.
In Figure 10,1 for example is the substrate of glass etc., has formed the polycrystalline film 14 that is made of the crystal orientation tiny crystal grains 13 different with particle diameter at an upper portion thereof.In this polycrystalline film 14, owing to exist crystal grain 13 with all size and directivity in aforesaid substrate 1 top, so exist countless grain boundaries.
In addition, the reflector 15 that uses polycrystalline film shown in Figure 11 14 to make, the way that then can adopt the polycrystalline film 14 that substrate 1 top at glass etc. is made of the crystal orientation tiny crystal grains 13 different with particle diameter to carry out etching processing forms.
As mentioned above, in above-mentioned prior art, make reflector 15, so can make the transistor and the cold electron emission device of superperformance with low technological temperature owing to form polycrystalline film 14 in the substrate top.The result can reduce the cost of reflector 15.
But, reflector 15 with above-mentioned polycrystalline film 14 formation, exist the problem that in electron emission characteristic, can produce inhomogeneity, as this problem, can enumerate following example: the crystal orientation and the crystallization orientation face that carry out the inhomogeneity of crystallization particle diameter of polycrystalline film of etching processing and each crystal grain are widely different, so when the reflector of being implemented by etching 15 formed, existing isotropism or anisotropic etching speed was all different problem of each crystal grain of boundary with the grain boundary.
In other words, in existing polycrystalline film 14, because each crystal grain isotropism or anisotropic etching speed difference, so as shown in figure 11, forming on reflector 15 surfaces does not have the countless concavo-convex of systematicness, will produce inhomogeneity on its result in electron emission characteristic.And, in the forming of the reflector of implementing by etching 15, can not get reproducibility.Therefore, if use the polycrystalline film 14 of such scrambling, the reflector 15 that forms a plurality of homogeneous with good reproducibility on large-area substrates is difficult, uses the cost of the device of reflector 15 also will increase.
The present invention, invent in order to solve such problem, even if purpose provides under the situation that forms a plurality of reflectors, the homogeneity that also can reproducibility obtains the reflector shape well can suppress simultaneously to result from the reflector and the manufacture method thereof of inhomogeneity of the electron emission characteristic of reflector shape change.
Disclosure of an invention
The described reflector in the 1st aspect of the present invention is characterized in that: adopt for forming along the same crystallographic axis way that the column polycrystalline film of columnar grain implements etching of having grown in the substrate top.By means of this, even if forming under the situation of a plurality of reflectors, also can reproducibility obtain the homogeneity of reflector shape well, can suppress to result from the inhomogeneity of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the described reflector in the 2nd aspect of the present invention, it is characterized in that: adopt in the substrate top to have formed after same crystallographic axis growth has the column polycrystalline film of columnar grain, make the 1st dielectric film graphical in above-mentioned column polycrystalline film top, with above-mentioned patterned the 1st dielectric film, the way of above-mentioned column polycrystalline film being implemented etching forms.By means of this, even if forming under the situation of a plurality of reflectors, also can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the described reflector in the 3rd aspect of the present invention, it is characterized in that: adopt and form the 2nd dielectric film in the substrate top, formed after same crystallographic axis growth has the column polycrystalline film of columnar grain in above-mentioned the 2nd dielectric film top, make the 1st dielectric film graphical in above-mentioned column polycrystalline film top, with above-mentioned patterned the 1st dielectric film, the way of above-mentioned column polycrystalline film being implemented etching forms.By means of this, even if forming under the situation of a plurality of reflectors, also can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the described reflector in the 4th aspect of the present invention, in the described reflector in any one aspect aspect the 1st in the 3rd aspect, it is characterized in that: constitute the columnar grain of above-mentioned column polycrystalline film, crystal orientation and crystal plane are uniform on a certain constant direction for real estate.By means of this, even if forming under the situation of a plurality of reflectors, also can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the described reflector in the 5th aspect of the present invention, in the described reflector in any one aspect aspect the 1st in the 4th aspect, it is characterized in that: above-mentioned column polycrystalline film contains silicon at least.By means of this, just can realize the column polycrystalline in the large-area substrates top with the low temperature process below 500 ℃.Therefore, can become the homogeneous shape to the column polycrystal etching in the large-area substrates top, even if form in the large-area substrates top under the situation of a plurality of reflectors, the homogeneity that also can reproducibility obtains the reflector shape well can also suppress simultaneously to result from the fluctuation of the electron emission characteristic of reflector shape change.
Secondly, the described reflector in the 6th aspect of the present invention, in the described reflector in any one aspect aspect the 1st in the 5th aspect, it is characterized in that: the orientation face of above-mentioned column polycrystalline film is { 110}.By means of this, because crystal orientation and crystal plane become to being easy to uniform, so can carry out the etching of homogeneous shape, can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the described reflector in the 7th aspect of the present invention, in the described reflector in any one aspect aspect the 1st in the 5th aspect, it is characterized in that: the orientation face of above-mentioned column polycrystalline film is { 100}.By means of this, because crystal orientation and crystal plane become to being easy to uniform, so can carry out the etching of homogeneous shape, can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.In addition, can also suppress the potential barrier of grain boundary, simultaneously, reduce the trap energy level that on interfacial insulating film, forms.Therefore, can increase the mobility of getting over electronics, the reflector that implementation efficiency is good.
Secondly, the described reflector in the 8th aspect of the present invention, in the described reflector in any one aspect aspect the 1st in the 7th aspect, it is characterized in that: adopt above-mentioned column polycrystalline film is implemented the radius of curvature on the reflector top that the way of etching forms below 50nm.By means of this, the electric field that can increase the reflector top is concentrated, and can use the low-voltage emitting electrons.
Secondly, the described reflector in the 9th aspect of the present invention in the described reflector in any one aspect aspect the 1st in the 8th aspect, is characterized in that: the columnar grain that constitutes above-mentioned column polycrystalline film, one side's of the weak point of this columnar grain particle diameter is at least more than 100nm.By means of this, etching can be reduced and number will be become for inhomogenous grain boundary in reflector top ends office, the homogeneity that can reproducibility obtains the reflector shape well can also suppress simultaneously to result from the fluctuation of the electron emission characteristic of reflector shape change.
Secondly, the described reflector in the 10th aspect of the present invention in the described reflector, is characterized in that aspect the 9th: the angle that above-mentioned columnar grain and substrate constituted is more than 83 degree.By means of this, etching can be reduced and number will be become for inhomogenous grain boundary in reflector top ends office, the homogeneity that can reproducibility obtains the reflector shape well can also suppress simultaneously to result from the fluctuation of the electron emission characteristic of reflector shape change.
Secondly, the described reflector in the 11st aspect of the present invention in the described reflector, is characterized in that aspect the 3rd: above-mentioned the 2nd dielectric film contains aerobic or nitrogen at least.By means of this, can suppress to carry out diffusion of impurities to the column polycrystalline from glass, the column polycrystalline of excellent in crystallinity can be provided, can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the described reflector in the 12nd aspect of the present invention in the described reflector, is characterized in that aspect the 2nd or the 3rd: above-mentioned patterned the 1st dielectric film is round-shaped.By means of this, adopt the way of the column polycrystalline film being carried out etching, just can easily realize the reflector that the top is sharp-pointed.
Secondly, the described reflector in the 13rd aspect of the present invention aspect the 2nd or in the described reflector in the 3rd aspect, is characterized in that: above-mentioned patterned the 1st dielectric film is the polygonal shape.By means of this, remove outside the effect of the 12nd aspect of the present invention, can also improve the exposure accuracy of photoetching, and, can reduce the cost of exposed mask.
Secondly, the manufacture method of the described reflector in the 14th aspect of the present invention is characterized in that: have following operation: form in the substrate top along the operation of the column polycrystalline film of same crystallographic axis growth columnar grain; Above-mentioned column polycrystalline film is implemented the operation of etching.By means of this, even if forming under the situation of a plurality of reflectors, also can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the manufacture method of the described reflector in the 15th aspect of the present invention is characterized in that: have following operation: form the operation that the column polycrystalline film of columnar grain is arranged along same crystallographic axis growth in the substrate top; Make the patterned operation of the 1st dielectric film in above-mentioned column polycrystalline film top; Above-mentioned column polycrystalline film is implemented the operation of etching with above-mentioned patterned the 1st dielectric film.By means of this, even if forming under the situation of a plurality of reflectors, also can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the manufacture method of the described reflector in the 16th aspect of the present invention is characterized in that: have following operation: the operation that forms the 2nd dielectric film in the substrate top; Form the operation that the column polycrystalline film of columnar grain is arranged along same crystallographic axis growth in above-mentioned the 2nd dielectric film top; Make the patterned operation of the 1st dielectric film in above-mentioned column polycrystalline film top; Above-mentioned column polycrystalline film is implemented the operation of etching with above-mentioned patterned the 1st dielectric film.By means of this, even if forming under the situation of a plurality of reflectors, also can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the manufacture method of the described reflector in the 17th aspect of the present invention, in the manufacture method of any one the described reflector in aspect in aspect the 14th to the 16th, it is characterized in that: constitute the columnar grain of above-mentioned column polycrystalline film, crystal orientation and crystal plane are uniform on a certain constant direction for real estate.By means of this, even if forming under the situation of a plurality of reflectors, also can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the manufacture method of the described reflector in the 18th aspect of the present invention, in the manufacture method of any one the described reflector in aspect in aspect the 14th to the 17th, it is characterized in that: above-mentioned column polycrystalline film contains silicon at least.By means of this, just can realize the column polycrystalline in the large-area substrates top with the low temperature process below 500 ℃.Therefore, can become the homogeneous shape to the column polycrystal etching in the large-area substrates top, even if form in the large-area substrates top under the situation of a plurality of reflectors, the homogeneity that also can reproducibility obtains the reflector shape well can also suppress simultaneously to result from the fluctuation of the electron emission characteristic of reflector shape change.
Secondly, the manufacture method of the described reflector in the 19th aspect of the present invention, in the manufacture method of any one the described reflector in aspect aspect the 14th in the 18th aspect, it is characterized in that: the orientation face of above-mentioned column polycrystalline film is { 110}.By means of this, because crystal orientation and crystal plane become to being easy to uniform, so can carry out the etching of homogeneous shape, can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the manufacture method of the described reflector in the 20th aspect of the present invention, in the manufacture method of any one the described reflector in aspect aspect the 14th in the 18th aspect, it is characterized in that: the orientation face of above-mentioned column polycrystalline film is { 100}.By means of this, because crystal orientation and crystal plane become to being easy to uniform, so can carry out the etching of homogeneous shape, can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.In addition, can also suppress the potential barrier of grain boundary, simultaneously, reduce the trap energy level that on interfacial insulating film, forms.Therefore, can increase the mobility of getting over electronics, the reflector that implementation efficiency is good.
Secondly, the manufacture method of the described reflector in the 21st aspect of the present invention, in the manufacture method of any one the described reflector in aspect aspect the 14th in the 20th aspect, it is characterized in that: above-mentioned column polycrystalline film is implemented etching, make the radius of curvature on formed reflector top below 50nm.By means of this, the electric field that can increase the reflector top is concentrated, and can use the low-voltage emitting electrons.
Secondly, the manufacture method of the described reflector in the 22nd aspect of the present invention, in the manufacture method of any one the described reflector in aspect aspect the 14th in the 21st aspect, it is characterized in that: the columnar grain that constitutes above-mentioned column polycrystalline film, one side's of the weak point of this columnar grain particle diameter is at least more than 100nm.By means of this, etching can be reduced and number will be become for inhomogenous grain boundary in reflector top ends office, the homogeneity that can reproducibility obtains the reflector shape well can also suppress simultaneously to result from the fluctuation of the electron emission characteristic of reflector shape change.
Secondly, the manufacture method of the described reflector in the 23rd aspect of the present invention in the manufacture method of described reflector, is characterized in that aspect the 22nd: the angle that above-mentioned columnar grain and substrate constituted is more than 83 degree.By means of this, etching can be reduced and number will be become for inhomogenous grain boundary in reflector top ends office, the homogeneity that can reproducibility obtains the reflector shape well can also suppress simultaneously to result from the fluctuation of the electron emission characteristic of reflector shape change.
Secondly, the manufacture method of the described reflector in the 24th aspect of the present invention in the manufacture method of described reflector, is characterized in that aspect the 16th: above-mentioned the 2nd dielectric film contains aerobic or nitrogen at least.By means of this, can suppress to carry out diffusion of impurities to the column polycrystalline from glass, the column polycrystalline of excellent in crystallinity can be provided, can reproducibility obtain the homogeneity of reflector shape well, can also suppress to result from the fluctuation of the electron emission characteristic of reflector shape change simultaneously.
Secondly, the manufacture method of the described reflector in the 25th aspect of the present invention in the manufacture method of described reflector, is characterized in that aspect the 15th or 16: above-mentioned patterned the 1st dielectric film is round-shaped.By means of this, adopt the way of the column polycrystalline film being carried out etching, just can easily realize the reflector that the top is sharp-pointed.
Secondly, the manufacture method of the described reflector in the 26th aspect of the present invention aspect the 15th or in the manufacture method of the described reflector in the 16th aspect, is characterized in that: above-mentioned patterned the 1st dielectric film is the polygonal shape.By means of this, remove outside the effect of the 25th aspect of the present invention, can also improve the exposure accuracy of photoetching, and, can reduce the cost of exposed mask.
Secondly, the manufacture method of the described cold electron emission device in the 27th aspect of the present invention is characterized in that: have following operation: with the manufacture method of the described reflector in the 15th aspect or the 16th aspect, make the operation of reflector; Keep remaining patterned the 1st dielectric film to draw the operation that the 3rd insulating barrier forms gate electrode unchangeably in above-mentioned column polycrystalline film top; The operation of opening portion is formed at the top of only removing patterned the 1st dielectric film in above-mentioned column polycrystalline film top.By means of this, can easily form and draw gate electrode, the cost of cold electron emission device can be reduced, and photo-mask process need not be used.
The simple declaration of accompanying drawing
Fig. 1 is the profile of the column polycrystalline substrate of embodiments of the invention 1.
Fig. 2 is to use the process profile of manufacture method of the cold electron emission device of column polycrystalline substrate shown in Figure 1.
Fig. 3 is Raman's vector of the column polycrystalline substrate of embodiments of the invention 1.
Fig. 4 is the profile of the column polycrystalline substrate that is provided with bottom of embodiments of the invention 2.
Fig. 5 is the crystal orientation of embodiments of the invention 3 and embodiment 5 and the profile of crystal plane uniform column polycrystalline substrate on a certain constant direction.
Fig. 6 is the profile of the cold electron emission device of embodiments of the invention 4.
Fig. 7 shows the emitting electrons amount that emits from the different cold electron emission device of the membrane structure of embodiments of the invention 6.
Fig. 8 is { the XRD vector of the column polysilicon film of 110} orientation.
Fig. 9 shows the electric field strength that is added on the reflector top and the relation between the radius of curvature of reflector top.
Figure 10 is the profile of polycrystalline film of the prior art.
Figure 11 is to use the profile of the reflector of polycrystalline film of the prior art.
Preferred embodiment
Below, with Fig. 1, Fig. 2 inventive embodiment 1 is described.
Fig. 1 is the profile of the column polycrystalline substrate of embodiments of the invention 1, and Fig. 2 is the process profile of the manufacture method of the reflector of embodiments of the invention 1 and cold electron emission device.
In Fig. 1,1 for example is the substrate of glass etc.The 2nd, the column polycrystalline film.The 3rd, the grain boundary of expression intercrystalline boundary.The 4th, columnar grain.
Below, the formation of column polycrystalline film 2 is described.Substrate 1 top at glass shown in Figure 1 etc., being used as material gas uses by the plasma chemical vapor deposition method (PCVD) of from 0.1% to 3% silane gas of diluted in hydrogen, substrate temperature from 200 ℃ to 350 ℃, become film pressure from 0.1Pa to 5Pa, under the condition of RF power from 300W to 1kW, form as crystal orientation and crystal plane is uniform and the column polycrystalline film 2 of the column polysilicon film of particle diameter from about 100nm to 140nm.The film of growing under this condition will become mainly and have { the column polycrystalline film 2 of 110} face orientation.
In addition, if substrate 1 top at glass shown in Figure 1 etc., for example, with the same PCVD method, with the mist that in material gas, is mixed into silane gas and silicon tetrafluoride gas, substrate temperature from 250 ℃ to 450 ℃, become film pressure from 100Pa to 170Pa, under the condition of RF power from 50W to 500W, to make, then can mainly be had { the column polycrystalline film 2 of the about 250nm of particle diameter of 100} face orientation.
{ the 110} face orientation of making like this or { the column polycrystalline film 2 of 100} face orientation can realize having the cold electron emission device as the homogeneous shape reflector of effect of the present invention.
In addition,, want to form the reflector of homogeneous shape, wish that crystallization rate as the unit are containing ratio of polycrystalline and amorphous is more than 80% though in column polycrystalline film 1, contain amorphous layer.
This crystallization rate for example can be measured with Raman's optical spectroscopy, can be with the about 520cm of Raman-shifted amount of the crystalline phase that is obtained by Raman's optical spectroscopy
-1Intensity I (520) and the Raman-shifted amount 480cm of amorphous phase
-1Intensity I (480) between crystallization rate I (520)/{ I (520)+I (480) } that represent of relation represent (referring to Fig. 3).
In addition, in the present embodiment, specified representational growth conditions, the mist that contains silicon in use, under the growth conditions with a certain specified scope of gas flow, gas mixture ratio, substrate temperature, one-tenth film pressure, RF power etc., can obtain column polycrystalline film 2, its particle diameter or size can depend on that above-mentioned growth conditions changes.
For example, in Fig. 8, show plasma chemical vapor deposition method (PCVD method), X-ray diffraction (XRD) spectrum of the representative column polysilicon film of film forming under the condition of 300 ℃ of substrate temperatures, one-tenth film pressure 2Pa, RF power 300W with the mist of silane and hydrogen.Learn film, obtained strong peak value at the about 47.4 degree places of 2 θ, and orientation is (220) face with above-mentioned condition film forming.
In addition, orientation is { the column polycrystalline film 2 of 100} face, can be in PCVD method with the mist that uses silane gas and silicon tetrafluoride gas, 300 ℃ of substrate temperatures, obtain when becoming under the condition of film pressure 100Pa, RF power 300W film forming, the peak value (not drawing) of (400) will appear at about 63.2 degree places in 2 θ of XRD spectrum.
Secondly, illustrate with the reflector of said column polycrystalline film 2 manufacturings in top and the manufacture method of cold electron emission device with Fig. 2.
As mentioned above, formed in substrate 1 top after (referring to Fig. 2 (a)) column polycrystalline film 2, shown in Fig. 2 (b),, made SiO with PCVD method or sputtering method, vapour deposition method etc.
2Deng the 1st dielectric film 5 be patterned into and make to become and be round-shaped or polygonal shape at each point of column polycrystalline film top.Should be graphical, for example, the dielectric film about deposit 200nm by means of photo-mask process, is processed into this dielectric film the dot pattern of the round-shaped or polygonal shape of about 1 micron of diameter.
After having formed the 1st dielectric film 5 of round-shaped or polygonal shape, shown in Fig. 2 (c), adopt the way of implementing reactive ion etching (RIE), processing column polycrystalline film 2 obtains reflector 6.As etching gas, for example, can use SF
6Deng halogen gas.
Then, shown in Fig. 2 (d), with formation SiO such as vapour deposition methods
2Deng gate insulator 7 and Nb etc. draw gate electrode 8.Adopt the way of control gate insulating film 7 thickness, just can easily make the head portion of reflector 6 and draw variable in distance between the gate electrode 8, make electrical efficiency concentrate on the head portion of reflector 6 well, can obtain the good cold electron emission device of electronic transmitting efficiency.
At last, shown in Fig. 2 (e), remove top from the 1st dielectric film 5 parts of the dot pattern that is processed to above-mentioned round-shaped or polygonal shape, form opening portion with the method for peeling off.In addition, in the present embodiment in 1,, also can form with sputtering method though remove gate insulator 7 and extraction electrode 8 forms opening portions with the method for peeling off.
As mentioned above, if employing the present invention, owing to adopt the way manufacturing reflector 6 of implementing etching with the column polycrystalline film, in all parts of removing 3 tops, grain boundary, isotropism or anisotropic etching speed when implementing wet etching or reactive ion etching are equated.Therefore, can reproducibility make reflector 6 well, when on a large scale, forming a plurality of reflector 6, can obtain the homogeneity of shape.
In addition, column polycrystalline film 2 contains silicon at least, specifically, is polysilicon film or polycrystalline silicon germanium, adopts and uses these to contain the way of the material of silicon, just can form polysilicon film in the large-area substrates top with the low temperature process below 500 ℃.Therefore, can become the homogeneous shape to the column polycrystal etching in the large-area substrates top, even if form in the large-area substrates top under the situation of a plurality of reflectors, the homogeneity that also can reproducibility obtains the reflector shape well can also suppress simultaneously to result from the fluctuation of the electron emission characteristic of reflector shape change.
Below, with Fig. 4 embodiments of the invention 2 are described.
Fig. 4 is the profile of the column polycrystalline substrate of embodiments of the invention 2.In addition, the cold electron emission device of present embodiment 2, only after the film forming dielectric film of substrate top, just form the column polycrystalline film 2 that columnar grain is arranged along same crystallographic axis growth, make reflector and cold electron emission device this point, different with the cold electron emission device of the foregoing description 1 that forms above-mentioned column polycrystalline film 2 without the dielectric film covered substrate.For this reason, give same label and omit explanation for those inscapes identical with embodiment 1.
In Fig. 4, in glass substrate 1 top, film forming the 2nd dielectric film 9.In the processing of this glass substrate 1 top film forming the 2nd dielectric film 9, for example,, use silane gas and N as material
2The mist of O gas or TEOS and oxygen is used the PCVD method, substrate temperature from 200 ℃ to 300 ℃, become film pressure film forming silicon dioxide film SiO from 0.1Pa to 10Pa, under the condition of RF power from 300W to 500W
2About 300nm is to 1000nm.In addition, it is the same with the said embodiment 1 in top that the 2nd dielectric film 9 forms later technology, so omitted.
As mentioned above, adopt the way at substrate 1 top film forming the 2nd dielectric film 9, just can suppress to be contained in the interior impurity of substrate 1, for example, the diffusion of boron or sodium etc. just can improve the crystallinity of column polycrystalline film 2.
In addition, the 2nd dielectric film 9 as long as contain the dielectric film of silicon at least, is removed silicon dioxide film SiO
2In addition, even if use nitride film SiN
xOr nitric oxide film or their composite membrane, also can obtain same effect.
Below, with Fig. 5 embodiments of the invention 3 are described.
Fig. 5 is the profile of uniform column polycrystalline film substrate on a certain constant direction of embodiments of the invention 3.In addition, give same label and omit explanation for those and the top identical inscape of said embodiment.
In Fig. 5, columnar grain 4 fitly is arranged as and makes for substrate 1 surface, and crystal orientation and crystal plane become and be a certain constant direction.The 10th, show that the crystal orientation of each grain orientation, crystal plane orientation are to this crystal orientation 10 vertical { 110} or { 100}.
The proper alignment of the columnar grain of this column polycrystalline film post even if contain amorphous phase in column polycrystalline film 2, also can obtain more than 80% if its crystallization rate is said ideally.In addition, it is the same with the said embodiment 1 in top that the column polycrystalline film substrate that is made of the columnar grain 4 of this homogeneous shape forms later technology, so explanation is omitted.
As mentioned above, if adopt present embodiment 3, because the structure of the columnar grain 4 in the column polycrystalline film 2 is uniform to substrate 1 crystal orientation and crystal plane on a certain constant direction, so not only at same intragranular, in all grained region beyond the grain boundary, the isotropism of etching or anisotropic etching speed are equated.Therefore, can reproducibility make reflector well, when on a large scale, forming a plurality of reflector, can obtain the homogeneity of shape.
Below, with Fig. 6 embodiments of the invention 4 are described.
Fig. 6 is the profile with the transmitter portion of the cold electron emission device of column polycrystalline film 2 manufacturings of the embodiment of the invention 4.In Fig. 6, a side's of the weak point of 11 expression columnar grains particle diameter.The 6th, reflector, the 12nd, the head portion of reflector.In addition, in Fig. 6, give same label and omit explanation for the inscape identical with the said embodiment in top 1.
The radius of curvature of reflector head portion 12, in general when radius of curvature during greater than 50nm then not energy efficiency carry out well concentrating by drawing the electric field that gate electrode 8 (referring to above-mentioned Fig. 2 (e)) forms to the reflector head portion, for the electronics that obtains under the situation of silicon is launched needed electric field strength 106V/mm, just must give and draw the high voltage that gate electrode 8 adds that 50V is above.Drive circuit is lower than 50V owing to it is desirable to grid voltage, so it is desirable to make the radius of curvature of reflector head portion 12 to do to become below the 50nm.
In addition, in general, the electric field strength of the cold electron emission of silicon need be 10
6More than the V/mm, if establish reflector and add that for reflector the distance of drawing between the gate electrode of positive voltage V (V) is d, the top radius of curvature of reflector is r, then in the electric field strength on reflector top, can use formula (1) expression.
F=2V/r?Ln(2d/r) (V/mm)…………(1)
Fig. 9 shows in above-mentioned (1), for example, is establishing d=0.5 * 10
-6(m), the electric field strength F during V=60,80,100 (V) is to the relation of reflector top radius of curvature r.In the drawings, want to make F greater than 10
6V/mm just must satisfy the condition of V＞80V, r＜50nm.For this reason, r is big more, then in order to add greater than 10 for the reflector top
6The electric field strength of V/mm just need bigger voltage more, otherwise r is more little, and then voltage just more can be low.If need high voltage, the circuit of then the controlling reflector complexity that can become in addition, also will become problem owing to draw the withstand voltage of lower insulation layer of gate electrode, be the high cold electron emission device of cost so will become.Therefore, adopt to make the top radius of curvature make to become the following way of 50nm, cheap low voltage drive circuit just can be provided.
Yet; the radius of curvature of this reflector head portion 12; if adopt the reactive ion etching of common use halogen gas or contain the wet etching of fluoric acid; then to say radius of curvature terrifically and do to become below the 50nm; the shape of for example counting the point of the following the sort of degree of nm is very difficult; usually can become to about 50nm; for this reason; employing makes a side the particle diameter 11 of the weak point of columnar grain form the above way of 100nm, just can realize having the cold electron emission device of the reflector head portion of homogeneous shape.
In addition, under the situation that radius of curvature of reflector head portion 12 is formed size about 50nm, if a side's of the weak point of columnar grain particle diameter 11 is little unlike 100nm, then grain boundary 3 probability (possibility) that is positioned at the reflector head portion increases, because the cause of grain boundary just can not reproducibility form the reflector head portion 12 that has about radius of curvature 50nm well.
Have, when defective on grain boundary 3 is many, when defective was positioned on the reflector head portion 12, the emitting electrons amount reduced again.Because above reason, a side's of the weak point of columnar grain particle diameter is to form more than the 100nm to well.
As mentioned above, if adopt present embodiment 4, since the result become for a side's of the weak point of above-mentioned columnar grain particle diameter 11 at least more than 100nnm, so on reflector head portion 12, there is not the different grain boundary of etching speed, can reproducibility form reflector head portion 11 well.
Embodiment 5
Below, with Fig. 5 and Fig. 2 (e) embodiments of the invention 5 are described.In addition, in Fig. 5,, use same label and omit explanation for the identical formation of the said embodiment in those and top 3.
In Fig. 5, the 10th, show the crystal orientation of each grain orientation.Each crystal grain 4 is formed for substrate 1 and has the above angle of 83 degree.This is because will form reflector, and the thickness of the column polycrystalline film 2 of minimum 0.1 micron particle diameter needs about 0.8 micron at least, at this moment, makes do not have the different grain boundary of etching speed, tan as much as possible near the reflector head portion for doing to become
-1(0.8/0.1) 83 degree are necessary.In addition, shown in Fig. 2 (e), if make electric field concentrate on reflector head portion 12 to draw electronics, because electronics is flowing on the vertical direction substantially for substrate 1, if crystal grain is below 83 degree for substrate 1, then electronics will cross the grain boundary, must flow to the reflector head portion simultaneously always.On the other hand, if greater than 83 degree, then electronics can flow to the reflector head portion at same intragranular always, can cross the many grain boundaries of defective, can not reduce emission current.
As mentioned above,, have the above angle of 83 degree,, can reproducibility form reflector head portion 11 well so do not have the different grain boundary of etching speed at the reflector head portion owing to each grain shaped being become for substrate 1 if adopt present embodiment 5.In addition, can obtain the good cold electron emission device of electron emission characteristic.
Embodiment 6
Below, with Fig. 1, Fig. 7 embodiments of the invention 6 are described.In addition, Fig. 1 is owing on top be illustrated among the said embodiment 1, and the Therefore, omited is to the explanation of each inscape.
The crystal plane of columnar grain 4 is { 110} or { 100} face orientation.Why work becomes { 110} face orientation, be the orientation face of column polycrystalline film 2 to be made to become { the way of 110} because adopt, crystal orientation and crystal plane just are easy to uniform, therefore, can carry out the etching of homogeneous shape, realization has the cause of the cold electron emission device of the good reflector of homogeneity in the large-area substrates top.
Have again, employing does to become { 110} or the { way of 100} to orientation face, the energy barrier of the formed electron motion in grain boundary increases mobility in the time of can reducing electronics in the column polycrystalline film 2 and get in semiconductor layer, and the result can realize increasing and high-speed responsive of emitting electrons amount.
Why work becomes { 100} face orientation, be because with { orientation of 110} face relatively, can reduce the potential barrier of grain boundary, the cause that makes electronics be easy to flow, simultaneously, also because if do to become { 100} face orientation, then the trap of the charge carrier at the interface between gate insulator and the semiconductor junction crystal face is with { orientation of 110} face relatively reduces, the electronics at semiconductor-interfacial dielectric layer place becomes and is easy to the cause that flows more, mobility will further increase, and the result can realize the increase and the high-speed responsive of emitting electrons amount.
Fig. 7 shows in the present invention the measured quantity of implementing from the emitting electrons amount of the reflector of 1000 different chips of crystal structure.But it is identical being added in that the voltage of drawing on the gate electrode does to become.In Fig. 7, { 110} column polycrystalline film 2 forms under the situation of reflectors usefulness orientation face, and the situation comparison with amorphous (amorphous) silicon shows the nearly emitting electrons amount more than 2 times.The emitting electrons amount is relevant with the glorious degrees from fluorophor, and briliancy and emitting electrons amount are proportional.In other words, expect identical amount of electrons (glorious degrees), with orientation face 100} column polycrystalline film 2 forms under the situation of reflectors, and with under the situation of amorphous silicon relatively, can realize lower voltage with the low gate electrode of drawing.
Have, { relatively, { 100} one side has increased the magnitude of current from the cold electron emission device to orientation face, can realize lower voltage under the situation of 110} column polycrystalline film with orientation face again.
As mentioned above, if adopt present embodiment 6, if the crystal plane of columnar grain work is become { 110} or { orientation of 100} face then can increase the emitting electrons amount, can carry out low voltage drive, can form the good cold electron emission device of efficient.
The possibility of industrial utilization
Transmitter of the present invention and transmitter manufacture method are owing to adopt in the substrate upper edge The column polycrystalline film of crystallographic axis growth columnar grain is implemented the way of etching, and is can repeatability good Ground forms the neat transmitter of end shape, so even if form a plurality of in the large-area substrates top In the situation of transmitter, also can repeatability obtain well the homogeneity of transmitter shape. Borrow Help this, can also suppress to result from the fluctuation of the electron emission characteristic of transmitter shape change. Can be used as plane image display apparatus or various sensor, high-frequency generator, ultrahigh speed device The electron source of the various electron beam use devices such as part, electron microscope, electron beam lithography system.
Claims (27)
1. reflector is characterized in that adopting following way to form:
For implementing etching along the grown column polycrystalline film of columnar grain of same crystallographic axis in the substrate top.
2. reflector is characterized in that adopting following way to form:
Formed in the substrate top after the column polycrystalline film of the columnar grain of having grown along same crystallographic axis, made the 1st dielectric film graphical in above-mentioned column polycrystalline film top,
With above-mentioned patterned the 1st dielectric film, above-mentioned column polycrystalline film is implemented etching.
3. reflector is characterized in that adopting following way to form:
Form the 2nd dielectric film in the substrate top, formed after same crystallographic axis growth has the column polycrystalline film of columnar grain, make the 1st dielectric film graphical in above-mentioned column polycrystalline film top in above-mentioned the 2nd dielectric film top,
With above-mentioned patterned the 1st dielectric film, above-mentioned column polycrystalline film is implemented etching.
4. the described reflector of any one claim in the claim 1 to 3 is characterized in that:
Constitute the columnar grain of above-mentioned column polycrystalline film, crystal orientation and crystal plane are uniform on a certain constant direction for real estate.
5. the described reflector of any one claim in the claim 1 to 4, it is characterized in that: above-mentioned column polycrystalline film contains silicon at least.
6. the described reflector of any one claim in the claim 1 to 5, it is characterized in that: the orientation face of above-mentioned column polycrystalline film is { 110}.
7. the described reflector of any one claim in the claim 1 to 5, it is characterized in that: the orientation face of above-mentioned column polycrystalline film is { 100}.
8. the described reflector of any one claim in the claim 1 to 7 is characterized in that: adopt above-mentioned column polycrystalline film is implemented the radius of curvature on the reflector top that the way of etching forms below 50nm.
9. the described reflector of any one claim in the claim 1 to 8, it is characterized in that: constitute the columnar grain of above-mentioned column polycrystalline film, a side's of the weak point of this columnar grain particle diameter is at least more than 100nm.
10. the described reflector of claim 9 is characterized in that: the angle that above-mentioned columnar grain and substrate constituted is more than 83 degree.
11. the described reflector of claim 3 is characterized in that: above-mentioned the 2nd dielectric film contains aerobic or nitrogen at least.
12. claim 2 or 3 described reflectors is characterized in that: above-mentioned patterned the 1st dielectric film is round-shaped.
13. claim 2 or 3 described reflectors is characterized in that: above-mentioned patterned the 1st dielectric film is the polygonal shape.
14. the manufacture method of a reflector is characterized in that having following operation:
Form the operation of column polycrystalline film along same crystallographic axis growth columnar grain in the substrate top;
Above-mentioned column polycrystalline film is implemented the operation of etching.
15. the manufacture method of a reflector is characterized in that having following operation:
Form the operation of column polycrystalline film along same crystallographic axis growth columnar grain in the substrate top;
Make the patterned operation of the 1st dielectric film in above-mentioned column polycrystalline film top;
Above-mentioned column polycrystalline film is implemented the operation of etching with above-mentioned patterned the 1st dielectric film.
16. the manufacture method of a reflector is characterized in that having following operation:
Form the operation of the 2nd dielectric film in the substrate top;
Form the operation that the column polycrystalline film of columnar grain is arranged along same crystallographic axis growth in above-mentioned the 2nd dielectric film top;
Make the patterned operation of the 1st dielectric film in above-mentioned column polycrystalline film top;
Above-mentioned column polycrystalline film is implemented the operation of etching with above-mentioned patterned the 1st dielectric film.
17. the manufacture method of the described reflector of any one claim in the claim 14 to 16 is characterized in that: constitute the columnar grain of above-mentioned column polycrystalline film, crystal orientation and crystal plane are uniform on a certain constant direction for real estate.
18. the manufacture method of the described reflector of any one claim in the claim 14 to 17 is characterized in that: above-mentioned column polycrystalline film contains silicon at least.
19. the manufacture method of the described reflector of any one claim in the claim 14 to 18, it is characterized in that: the orientation face of above-mentioned column polycrystalline film is { 110}.
20. the manufacture method of the described reflector of any one claim in the claim 14 to 18, it is characterized in that: the orientation face of above-mentioned column polycrystalline film is { 100}.
21. the manufacture method of the described reflector of any one claim in the claim 14 to 20 is characterized in that: above-mentioned column polycrystalline film is implemented etching, make the radius of curvature on formed reflector top below 50nm.
22. the manufacture method of the described reflector of any one claim in the claim 14 to 21 is characterized in that: constitute the columnar grain of above-mentioned column polycrystalline film, a side's of the weak point of this columnar grain particle diameter is at least more than 100nm.
23. the manufacture method of the described reflector of claim 22 is characterized in that: the angle that above-mentioned columnar grain and substrate constituted is more than 83 degree.
24. the manufacture method of the described reflector of claim 16 is characterized in that: above-mentioned the 2nd dielectric film contains aerobic or nitrogen at least.
25. the manufacture method of claim 15 or 16 described reflectors is characterized in that: above-mentioned patterned the 1st dielectric film is round-shaped.
26. the manufacture method of claim 15 or 16 described reflectors is characterized in that: above-mentioned patterned the 1st dielectric film is the polygonal shape.
27. the manufacture method of cold electron emission device is characterized in that having following operation:
Make the operation of reflector with the manufacture method of claim 15 or the described reflector of claim 16;
Keep remaining patterned the 1st dielectric film to draw the operation that the 3rd insulating barrier forms gate electrode unchangeably in above-mentioned column polycrystalline film top;
The operation of opening portion is formed at the top of only removing patterned the 1st dielectric film in above-mentioned column polycrystalline film top.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17850099 | 1999-06-24 | ||
| JP178500/1999 | 1999-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1318203A true CN1318203A (en) | 2001-10-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00801476A Pending CN1318203A (en) | 1999-06-24 | 2000-06-23 | Emitter, emitter fabricating method, and cold electron emitting device fabricating method |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR20010072923A (en) |
| CN (1) | CN1318203A (en) |
| ID (1) | ID27523A (en) |
| TW (1) | TW469463B (en) |
| WO (1) | WO2000079556A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601753A (en) * | 2015-10-19 | 2017-04-26 | 台湾积体电路制造股份有限公司 | Semiconductor device and formation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4792625B2 (en) * | 2000-08-31 | 2011-10-12 | 住友電気工業株式会社 | Method for manufacturing electron-emitting device and electronic device |
| KR100926151B1 (en) * | 2007-07-18 | 2009-11-10 | 한국원자력연구원 | Method for preparing carbon nanotube large area emitter by using carbon nanotube-polymer composite |
| WO2011121778A1 (en) * | 2010-03-31 | 2011-10-06 | 日新電機株式会社 | Thin film polycrystalline silicon and process for production thereof, and plasma device for production of thin film polycrystalline silicon |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3033178B2 (en) * | 1990-10-30 | 2000-04-17 | ソニー株式会社 | Field emission type emitter |
| US5329207A (en) * | 1992-05-13 | 1994-07-12 | Micron Technology, Inc. | Field emission structures produced on macro-grain polysilicon substrates |
| JP3460376B2 (en) * | 1995-05-08 | 2003-10-27 | 富士電機株式会社 | Manufacturing method of micro cold electron source |
| JP3012517B2 (en) * | 1995-05-11 | 2000-02-21 | 凸版印刷株式会社 | Electron emitting device and method of manufacturing the same |
| JPH10312736A (en) * | 1997-05-13 | 1998-11-24 | Ricoh Co Ltd | Electron emitting element and method for forming cathode thereof |
-
2000
- 2000-06-23 KR KR1020017002346A patent/KR20010072923A/en active Search and Examination
- 2000-06-23 WO PCT/JP2000/004114 patent/WO2000079556A1/en not_active Application Discontinuation
- 2000-06-23 CN CN00801476A patent/CN1318203A/en active Pending
- 2000-06-23 TW TW089112435A patent/TW469463B/en not_active IP Right Cessation
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601753A (en) * | 2015-10-19 | 2017-04-26 | 台湾积体电路制造股份有限公司 | Semiconductor device and formation method thereof |
| CN106601753B (en) * | 2015-10-19 | 2020-06-05 | 台湾积体电路制造股份有限公司 | Semiconductor device and method of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010072923A (en) | 2001-07-31 |
| TW469463B (en) | 2001-12-21 |
| WO2000079556A1 (en) | 2000-12-28 |
| ID27523A (en) | 2001-04-12 |
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