CN1317875A - 薄膜电极及利用其制造的表面声波器件 - Google Patents
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Abstract
本发明提供一种用于表面声波器件的薄膜电极及其制造方法。薄膜电极包括:在压电衬底上形成的非晶层;以及在所述非晶层上形成的单晶层和取向层中至少一种。薄膜电极的方法包括以下步骤:在压电衬底表面形成非晶层,与此同时用辅助离子束照射压电衬底表面;以及用辅助离子束照射非晶层表面以在所述非晶层表面形成单晶层和取向层中至少一种。
Description
本申请是1997年1月20日提交的发明名称为“金属薄膜及其制造方法以及由此获得的表面声波器件”的中国专利申请97102082.5的分案申请。
本发明涉及用于金属薄膜电极及其制造方法,同时也涉及利用这种薄膜电极制造的表面声波器件。
最近,各种电容、大规模集成电路、线圈、滤波器和振荡器的尺寸都有所减小。因此就电功率方面考虑,用作这些部件的电极的薄膜(氧化铝等)需要更高的电阻。由氧化铝等制成的薄膜结晶度对电阻的大小是有重要影响的。当薄膜材料为多晶或非晶时,受高电流密度或者高应力的作用,最终形成的薄膜中所含原子在晶界内扩散,成为电学迁移或应力迁移。如果薄膜内的原子在晶界处扩散,则在薄膜中会形成峰和谷,从而引起短路或者开路。因此,有必要利用薄膜的单晶化排除可能成为原子扩散路径的晶界,从而改善对电功率的薄膜电阻(相对于电学迁移和应力迁移下的电阻)。
但是,利用普通的薄膜形成方法不可能在非晶体、多晶体的表面或者多晶体晶向层上形成单晶。
本发明的一个目标是提供一种用于表面声波器件的薄膜电极和形成该薄膜电极的方法,该电极提高了电功率耐受强度。
本发明的另一个目标是提供一种利用该薄膜电极制造的表面声波器件及其制造方法。
按照本发明的一个方面,提供的用于表面声波器件的薄膜电极包含:在压电衬底上形成的非晶层;以及在所述非晶层上形成的单晶层和取向层中至少一种。
按照本发明的另一方面,表面声波器件包含:压电衬底;形成于压电衬底上的薄膜电极,所述电极具有上述薄膜电极的结构。
按照本发明的另一方面,薄膜电极的方法包括以下步骤:在压电衬底表面形成非晶层,与此同时用辅助离子束照射压电衬底表面;以及用辅助离子束照射非晶层表面以在所述非晶层表面形成单晶层和取向层中至少一种。
按照本发明的另一方面,制造表面声波器件的方法包括以下步骤:在压电衬底表面形成非晶层,与此同时用辅助离子束照射压电衬底表面;以及用辅助离子束照射非晶层表面以在所述非晶层表面形成单晶层和取向层中至少一种。
图1为用于制造金属薄膜的装置图,该装置示出了按照本发明的金属薄膜及其制造方法的实施例;
图2为形成于非晶体表面的单晶金属薄膜的剖面图;以及
图3为薄膜电极的横向剖面图,包括形成于压电衬底表面的单晶结构或者取向层结构。
第一实施例
通过以下结合附图对金属薄膜及其制造方法实施例的描述将会进一步理解本发明。按照本发明,在玻璃衬底上形成了(111)晶向的铝薄膜。
图1示出了用于形成薄膜的双离子束溅射装置1。双离子束溅射装置1包括真空腔体2和与真空腔体右壁上的抽气端口2a相连的真空泵(未画出)。在真空腔体2内部,溅射用离子源3和辅助薄膜形成用离子束源4位于左侧,而后板5和后板5上方的衬底支架6位于右侧。
采用溅射装置1以如下的方法淀积薄膜:铝靶作为溅射靶材料固定在由铟之类铜焊填充金属组成的后板5的表面上。玻璃衬底12(即非晶材料)固定在衬底支架6的表面上。采用真空泵通过排气口2a将真空腔体2抽至0.1Pa以下。如果真空度超过0.1Pa,则最终的薄膜将含有残余的气体,例如H2O。在本实施例中,真空腔体2保持在5×10-3Pa。
所谓的“离子辅助”即使离子源4的离子束21照射到玻璃衬底12的表面以辅助薄膜形成,并且持续到薄膜形成为止。离子束21较好的能量为100eV-1KeV。如果能量小于100eV,对于薄膜中的原子来说,能量是不够的,而1KeV以上的能量过高,使得离子束21产生有害的溅射并使淀积在玻璃衬底12表面上的薄膜内的原子扩散,从而阻碍了薄膜的生长。
离子束21比较好的电流密度为0.01-20mA/cm2。如果电流密度小于0.01mA/cm2,则对于薄膜中的原子来说,能量是不够的,而20mA/cm2以上的电流密度过高使得离子束21产生有害的溅射并使淀积在玻璃衬底12表面上的薄膜内的原子扩散,从而阻碍了薄膜的生长。离子束21相对玻璃衬底12的入射角比较好的是相对于玻璃衬底12的法线介于0-45度之间。如果入射角落在上述角度范围之外,则难以向薄膜中的原子有效提供能量。
溅射用的氩离子束从离子源3照射到铝靶11上进行溅射。氩离子与铝靶11碰撞以使离子23扩散。从铝靶11扩散的离子23到达玻璃衬底12的表面并且淀积下来以形成铝薄膜13。薄膜形成速度比较好的是在0.001nm/秒以上。当速度低于0.001nm/秒时,薄膜中的原子积聚起来,从而生成晶粒。在本实施例中,薄膜在25℃下的形成速度为0.06nm/秒。由于玻璃衬底12由非晶材料构成,所以在薄膜形成的初始阶段铝薄膜13不具有单晶原子结构。但是,当淀积上几层原子后,玻璃衬底12的影响会消失,并且薄膜13可以达到单晶原子结构。在薄膜形成之后,玻璃衬底12从真空腔体中移出。如图2所示,淀积在衬底12表面上的铝薄膜13的表面由于与氧气氛接触形成氧化层13a。
根据Rheed方法的估计,确认最终的铝薄膜13具有单晶结构。因此,通过采用铝薄膜13,防止了高电流密度或高应力下原子在晶界处的扩散,从而获得了可靠的电极。例如,铝薄膜13对电功率的电阻大约是多晶铝薄膜电阻的100倍。
铝薄膜13的晶格缺陷较少并且具有极佳的抗蚀性,使得腐蚀部分减少至多晶铝薄膜的十分之一。因此,除了用作电极材料之外,本发明的薄膜也可以用作装饰材料(例如镜子)和氯化物环境中(例如海边或者海上)。
在不偏离本发明的精神或实质的前提下,本发明的金属薄膜及其制造方法也可以用于其它方面。所以本实施例只是示意性的而非限定性的。
除了氩离子以外,氦离子、氖离子、氪离子或者氙离子也可以单独或者组合起来用作辅助薄膜形成的离子束。除了铝以外,也可以采用金、银、铜、钯、钛、铬、镍、钨及其合金作为薄膜材料。根据薄膜材料和非晶体的组合或者薄膜材料和多晶体或多晶体取向层的组合的不同,溅射条件也随之不同。
虽然在上述实施例中在玻璃衬底上形成的是(111)取向的铝薄膜,但是薄膜的取向也可以是其它选择,例如(200)取向的铝薄膜。而且,溅射可以在薄膜上而不在衬底上进行。而且,被溅射的物质不必全是非晶的,只要表面是非晶的即可。作为薄膜形成方法,除了溅射之外,可以采用蒸发、化学汽相淀积、分子束外延、激光剥蚀等方法。除了玻璃衬底之外,也可以采用氮化硼等衬底。而且,金属薄膜无需整个都是单晶的,只要部分是单晶的即可。
第二实施例
现在描述作为本发明实施例的表面声波器件用薄膜电极、表面声波器件以及它们的制造方法。实施例的情形是采用与第一实施例相同的方法和条件在钛酸锂衬底上形成(111)取向的铝薄膜。
图3示出了按照本发明的表面声波器件薄膜电极23的剖面图。通过在经过掩膜的衬底上溅射或者刻蚀形成于整个衬底表面上的薄膜电极形成平面梳状IDT(叉指换能器)薄膜电极23。
在铝薄膜24形成的初始阶段,受离子辅助的影响,薄膜24形成如图3所示的非晶层24a。随着薄膜形成的发展,薄膜24形成单晶层(高度取向层)24b。在薄膜形成之后,当包含铝薄膜24的衬底12从真空腔体2中取出时,由于与空气接触,会在铝薄膜24的表面形成氧化层24c。
如上所述,按照本发明,在非晶体、多晶体的表面或者单晶体的取向层上形成了完整或部分单晶的金属薄膜,与此同时在非晶体、多晶体的表面或者单晶体的取向层上照射离子束以辅助薄膜的形成。由于最终的金属薄膜包含单晶结构,所以防止了原子受高电流密度或高应力作用而在晶界处扩散。而且,金属薄膜的晶格缺陷较少,具有极佳的抗蚀性。因此,利用该金属薄膜可以获得可靠的电极。
Claims (4)
1.一种用于表面声波器件的薄膜电极,其特征在于包含:
在压电衬底上形成的非晶层;以及
在所述非晶层上形成的单晶层和取向层中至少一种。
2.一种表面声波器件,其特征在于包含:
压电衬底;
形成于压电衬底上的薄膜电极,所述电极具有如权利要求1所述的结构。
3.一种制造如权利要求1所述薄膜电极的方法,其特征在于包括以下步骤:
在压电衬底表面形成非晶层,与此同时用辅助离子束照射压电衬底表面;以及
用辅助离子束照射非晶层表面以在所述非晶层表面形成单晶层和取向层中至少一种。
4.一种制造如权利要求2所述表面声波器件的方法,其特征在于包括以下步骤:
在压电衬底表面形成非晶层,与此同时用辅助离子束照射压电衬底表面;以及
用辅助离子束照射非晶层表面以在所述非晶层表面形成单晶层和取向层中至少一种。
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Application Number | Priority Date | Filing Date | Title |
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JP6963/1996 | 1996-01-19 | ||
JP8006964A JPH09199968A (ja) | 1996-01-19 | 1996-01-19 | 弾性表面波素子用薄膜電極及びその形成方法 |
JP6964/1996 | 1996-01-19 | ||
JP8006963A JPH09194293A (ja) | 1996-01-19 | 1996-01-19 | 金属薄膜及びその形成方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 97102082 Division CN1162837A (zh) | 1996-01-19 | 1997-01-20 | 金属薄膜及其制造方法以及由此获得的表面声波器件 |
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CN1317875A true CN1317875A (zh) | 2001-10-17 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN01104546A Pending CN1317875A (zh) | 1996-01-19 | 2001-02-13 | 薄膜电极及利用其制造的表面声波器件 |
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US (2) | US6033471A (zh) |
EP (1) | EP0785299A1 (zh) |
KR (1) | KR100249935B1 (zh) |
CN (1) | CN1317875A (zh) |
CA (1) | CA2195486C (zh) |
NO (1) | NO970220L (zh) |
TW (1) | TW330341B (zh) |
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-
1997
- 1997-01-17 EP EP97100736A patent/EP0785299A1/en not_active Withdrawn
- 1997-01-17 NO NO970220A patent/NO970220L/no unknown
- 1997-01-17 TW TW086100536A patent/TW330341B/zh not_active IP Right Cessation
- 1997-01-20 KR KR1019970001450A patent/KR100249935B1/ko not_active IP Right Cessation
- 1997-01-20 CA CA002195486A patent/CA2195486C/en not_active Expired - Fee Related
- 1997-01-21 US US08/786,410 patent/US6033471A/en not_active Expired - Fee Related
-
2000
- 2000-01-12 US US09/481,182 patent/US6229250B1/en not_active Expired - Fee Related
-
2001
- 2001-02-13 CN CN01104546A patent/CN1317875A/zh active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100438991C (zh) * | 2002-05-01 | 2008-12-03 | 皇家飞利浦电子股份有限公司 | 薄膜超声转换器阵列 |
CN100438992C (zh) * | 2002-05-01 | 2008-12-03 | 皇家飞利浦电子股份有限公司 | 超声薄膜换能器 |
CN1324370C (zh) * | 2003-09-04 | 2007-07-04 | 精工爱普生株式会社 | 无机取向膜的形成方法、无机取向膜、电子设备用基板 |
CN112564662A (zh) * | 2020-12-11 | 2021-03-26 | 济南晶正电子科技有限公司 | 复合衬底及其制备方法、电子元器件 |
Also Published As
Publication number | Publication date |
---|---|
NO970220D0 (no) | 1997-01-17 |
NO970220L (no) | 1997-07-21 |
US6229250B1 (en) | 2001-05-08 |
TW330341B (en) | 1998-04-21 |
CA2195486C (en) | 2000-10-31 |
KR970060380A (ko) | 1997-08-12 |
US6033471A (en) | 2000-03-07 |
CA2195486A1 (en) | 1997-07-19 |
KR100249935B1 (ko) | 2000-03-15 |
EP0785299A1 (en) | 1997-07-23 |
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