CN1316057C - Sputtering target and production method therefor - Google Patents
Sputtering target and production method therefor Download PDFInfo
- Publication number
- CN1316057C CN1316057C CNB008073171A CN00807317A CN1316057C CN 1316057 C CN1316057 C CN 1316057C CN B008073171 A CNB008073171 A CN B008073171A CN 00807317 A CN00807317 A CN 00807317A CN 1316057 C CN1316057 C CN 1316057C
- Authority
- CN
- China
- Prior art keywords
- sputtering target
- conductive film
- transparent conductive
- izo
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 8
- 229910052738 indium Inorganic materials 0.000 abstract description 17
- 229910052725 zinc Inorganic materials 0.000 abstract description 15
- 238000005245 sintering Methods 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 48
- 150000001875 compounds Chemical class 0.000 description 14
- 239000011701 zinc Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000002000 scavenging effect Effects 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 229910007610 Zn—Sn Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Sample number | Sn content (ppm) | Body resistance | In 2O 3Content (weight %) | ZnO content (weight %) |
1 | 0 | 5.28 | 89.3 | 10.7 |
2 | 0 | 4.97 | 89.3 | 10.7 |
3 | 0 | 4.37 | 89.3 | 10.7 |
4 | 0 | 4.86 | 89.3 | 10.7 |
5 | 179 | 4.11 | 89.3 | 10.7 |
6 | 179 | 4.11 | 89.3 | 10.7 |
7 | 179 | 4.19 | 89.3 | 10.7 |
8 | 179 | 4.57 | 89.3 | 10.7 |
9 | 210 | 3.32 | 89.3 | 10.7 |
10 | 210 | 3.76 | 89.3 | 10.7 |
11 | 210 | 3.31 | 89.3 | 10.7 |
12 | 210 | 3.39 | 89.3 | 10.7 |
13 | 210 | 3.24 | 89.3 | 10.7 |
14 | 210 | 3.2 | 89.3 | 10.7 |
15 | 210 | 3.69 | 89.3 | 10.7 |
16 | 345 | 2.79 | 89.3 | 10.7 |
17 | 345 | 2.59 | 89.3 | 10.7 |
18 | 345 | 2.8 | 89.3 | 10.7 |
19 | 345 | 2.78 | 89.3 | 10.7 |
20 | 345 | 2.79 | 89.3 | 10.7 |
21 | 345 | 2.57 | 89.3 | 10.7 |
22 | 345 | 2.73 | 89.3 | 10.7 |
23 | 345 | 2.39 | 89.3 | 10.7 |
24 | 345 | 2.68 | 89.3 | 10.7 |
25 | 345 | 2.52 | 89.3 | 10.7 |
26 | 345 | 2.92 | 89.3 | 10.7 |
27 | 345 | 2.72 | 89.3 | 10.7 |
28 | 2100 | 1.88 | 89.3 | 10.4 |
29 | 2700 | 1.66 | 89.3 | 10.4 |
30 | 3400 | 1.73 | 89.3 | 10.3 |
31 | 3400 | 1.66 | 89.3 | 10.3 |
32 | 39000 | 0.72 | 89.3 | 5.7 |
33 | 78800 | 0.14 | 90 | 0 |
Sample number | Sn content (ppm) | Density (gram per centimeter 3) | Body resistance (m ohm cm) |
101 | 0 | 6.84 | 5.22 |
102 | 465 | 6.79 | 2.44 |
103 | 2000 | 6.78 | 1.93 |
Sample number | Sn content ppm) | The X-ray diffraction result | Optical transmission factor e (%) | Resistivity (m ohm cm) |
101 | 0 | Amorphous | 93.0 | 0.64 |
102 | 465 | Amorphous | 94.4 | 0.51 |
103 | 2000 | Amorphous | 94.3 | 0.59 |
Sample number | Sn content (ppm) | The X-ray diffraction result | Optical transmission factor e (%) | Resistivity (m ohm cm) |
101 | 0 | Amorphous | 96.4 | 0.59 |
102 | 465 | Amorphous | 94.5 | 0.60 |
103 | 2000 | Amorphous | 96.8 | 0.59 |
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP128122/99 | 1999-05-10 | ||
JP12812299 | 1999-05-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1350599A CN1350599A (en) | 2002-05-22 |
CN1316057C true CN1316057C (en) | 2007-05-16 |
Family
ID=14976943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008073171A Expired - Lifetime CN1316057C (en) | 1999-05-10 | 2000-05-01 | Sputtering target and production method therefor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3721080B2 (en) |
KR (1) | KR100603128B1 (en) |
CN (1) | CN1316057C (en) |
TW (1) | TW524870B (en) |
WO (1) | WO2000068456A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102037576A (en) * | 2008-05-20 | 2011-04-27 | 昭和电工株式会社 | Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100452112C (en) * | 2003-09-30 | 2009-01-14 | 旭硝子株式会社 | Multilayer body for forming base with wiring, base with wiring, and methods for manufacturing those |
CN104710163A (en) * | 2005-07-01 | 2015-06-17 | 出光兴产株式会社 | method for producing IZO sputtering target |
JP4761868B2 (en) * | 2005-07-27 | 2011-08-31 | 出光興産株式会社 | Sputtering target, manufacturing method thereof and transparent conductive film |
CN103320755A (en) * | 2006-12-13 | 2013-09-25 | 出光兴产株式会社 | Sputtering target and oxide semiconductor film |
US20130140502A1 (en) * | 2010-02-06 | 2013-06-06 | Idemitsu Kosan Co.,Ltd | Sputtering target |
CN103097570B (en) * | 2010-12-15 | 2015-04-01 | 吉坤日矿日石金属株式会社 | Ferromagnetic sputtering target and method for manufacturing same |
KR102030892B1 (en) * | 2014-11-07 | 2019-10-10 | 제이엑스금속주식회사 | Ito sputtering target and method for manufacturing same, ito transparent electroconductive film, and method for manufacturing ito transparent electroconductive film |
JP6078189B1 (en) * | 2016-03-31 | 2017-02-08 | Jx金属株式会社 | IZO sintered compact sputtering target and manufacturing method thereof |
JP6125689B1 (en) * | 2016-03-31 | 2017-05-10 | Jx金属株式会社 | Indium oxide-zinc oxide (IZO) sputtering target |
JP6267297B1 (en) * | 2016-08-29 | 2018-01-24 | Jx金属株式会社 | Sintered body, sputtering target and manufacturing method thereof |
JP6318296B1 (en) * | 2017-10-19 | 2018-04-25 | Jx金属株式会社 | IZO Sintered Body, IZO Sputtering Target, IZO Sintered Body Manufacturing Method, and IZO Molded Body |
JP6637948B2 (en) * | 2017-11-27 | 2020-01-29 | Jx金属株式会社 | IZO target and method for manufacturing the same |
TWI818210B (en) * | 2020-11-30 | 2023-10-11 | 光洋應用材料科技股份有限公司 | Indium zinc tin oxide sputtering target and its conductive film |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570943A (en) * | 1991-09-11 | 1993-03-23 | Mitsubishi Materials Corp | High density sintered target material for forming electric conductive transparent thin film by sputtering |
JPH06234521A (en) * | 1992-12-15 | 1994-08-23 | Idemitsu Kosan Co Ltd | Electric conductive transparent film and its production |
WO1994023452A1 (en) * | 1993-03-29 | 1994-10-13 | National Semiconductor Corporation | Plastic encapsulated integrated circuit package with fully slotted dambar |
JPH0971860A (en) * | 1995-06-28 | 1997-03-18 | Idemitsu Kosan Co Ltd | Target and its production |
EP0838976A1 (en) * | 1996-10-24 | 1998-04-29 | TDK Corporation | Organic EL light emitting device |
EP0891122A1 (en) * | 1997-07-09 | 1999-01-13 | TDK Corporation | Organic electroluminescent device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69328197T2 (en) * | 1992-12-15 | 2000-08-17 | Idemitsu Kosan Co | TRANSPARENT, CONDUCTIVE LAYER, TRANSPARENT, CONDUCTIVE BASE MATERIAL AND CONDUCTIVE MATERIAL |
-
2000
- 2000-05-01 JP JP2000617224A patent/JP3721080B2/en not_active Expired - Lifetime
- 2000-05-01 KR KR1020017014081A patent/KR100603128B1/en active IP Right Grant
- 2000-05-01 WO PCT/JP2000/002864 patent/WO2000068456A1/en not_active Application Discontinuation
- 2000-05-01 CN CNB008073171A patent/CN1316057C/en not_active Expired - Lifetime
- 2000-05-10 TW TW089108873A patent/TW524870B/en not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570943A (en) * | 1991-09-11 | 1993-03-23 | Mitsubishi Materials Corp | High density sintered target material for forming electric conductive transparent thin film by sputtering |
JPH06234521A (en) * | 1992-12-15 | 1994-08-23 | Idemitsu Kosan Co Ltd | Electric conductive transparent film and its production |
WO1994023452A1 (en) * | 1993-03-29 | 1994-10-13 | National Semiconductor Corporation | Plastic encapsulated integrated circuit package with fully slotted dambar |
JPH0971860A (en) * | 1995-06-28 | 1997-03-18 | Idemitsu Kosan Co Ltd | Target and its production |
EP0838976A1 (en) * | 1996-10-24 | 1998-04-29 | TDK Corporation | Organic EL light emitting device |
EP0891122A1 (en) * | 1997-07-09 | 1999-01-13 | TDK Corporation | Organic electroluminescent device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102037576A (en) * | 2008-05-20 | 2011-04-27 | 昭和电工株式会社 | Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp |
US8436396B2 (en) | 2008-05-20 | 2013-05-07 | Toyoda Gosei Co., Ltd. | Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp |
Also Published As
Publication number | Publication date |
---|---|
KR100603128B1 (en) | 2006-07-20 |
WO2000068456A1 (en) | 2000-11-16 |
JP3721080B2 (en) | 2005-11-30 |
CN1350599A (en) | 2002-05-22 |
KR20020013535A (en) | 2002-02-20 |
TW524870B (en) | 2003-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NIKKO MATERIALS CO. LTD Free format text: FORMER OWNER: JAPAN ENERGY CO., LTD. Effective date: 20040225 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20040225 Address after: Tokyo, Japan Applicant after: NIKKO MATERIALS Co.,Ltd. Address before: Tokyo, Japan Applicant before: Japan Energy Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: IDEMITSU KOSAN CO., LTD. Free format text: FORMER OWNER: NIPPON MINING AND METALS CO., LTD. Effective date: 20080307 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080307 Address after: Tokyo, Japan Patentee after: IDEMITSU KOSAN Co.,Ltd. Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co.,Ltd. |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160108 Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corp. Address before: Tokyo, Japan Patentee before: IDEMITSU KOSAN Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS Corp. Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corp. |
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CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20070516 |
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CX01 | Expiry of patent term |