CN1310341C - 制造电极的蚀刻方法 - Google Patents
制造电极的蚀刻方法 Download PDFInfo
- Publication number
- CN1310341C CN1310341C CNB018093361A CN01809336A CN1310341C CN 1310341 C CN1310341 C CN 1310341C CN B018093361 A CNB018093361 A CN B018093361A CN 01809336 A CN01809336 A CN 01809336A CN 1310341 C CN1310341 C CN 1310341C
- Authority
- CN
- China
- Prior art keywords
- high index
- layer
- bath
- conductive layer
- electrode assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000005530 etching Methods 0.000 title claims abstract description 31
- 230000008569 process Effects 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 238000003486 chemical etching Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- 229920001747 Cellulose diacetate Polymers 0.000 claims description 3
- 239000007859 condensation product Substances 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- -1 ether sulfone Chemical class 0.000 claims 2
- 239000000243 solution Substances 0.000 description 15
- 239000010931 gold Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- LZTOVUIDOJNVHA-UHFFFAOYSA-N niobium(5+) oxygen(2-) tin(4+) Chemical compound [O-2].[Nb+5].[Sn+4] LZTOVUIDOJNVHA-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920003051 synthetic elastomer Polymers 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000282596 Hylobatidae Species 0.000 description 1
- 241000270711 Malaclemys terrapin Species 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/05—Bonding or intermediate layer characterised by chemical composition, e.g. sealant or spacer
- C09K2323/051—Inorganic, e.g. glass or silicon oxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/261—In terms of molecular thickness or light wave length
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
- Y10T428/31529—Next to metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Liquid Crystal (AREA)
- Non-Insulated Conductors (AREA)
- Weting (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
采用一种方法在基底上形成基本上透明的电极，该方法包括依次在该基底上形成高指数底层、金属导电层和导电率至少约为4008 1/平方的高指数顶层，然后对所述高指数底层、高指数顶层和导电层进行化学蚀刻处理，在该金属导电层中形成分隔的电极。
Description
技术领域
本发明涉及为用于使用在显示设备中的透明电极形成图案的湿蚀刻法。
背景
美国专利申请第09/009,391号描述了一种在基底上形成许多基本上透明的电极的方法，该文参考结合于此。该方法包括依次在基底上形成高指数底层、金属导电层和导电率至少约为4008 1/平方(4008 1/square)的高指数顶层。对该高指数顶层和导电层，以及可能还对高指数底层，都可采用激光烧蚀法形成图案，以便在金属导电层中形成许多分隔的电极。激光束在基底上以光栅模式扫描，并在来自光栅影像处理器的数字信号的控制下进行调制。在激光烧蚀步骤完成后，电极组合件上有表面残留物和再沉积的碎屑。用含有表面活性剂的水溶液清洗该组合件的表面，或再轻微擦拭，去除残留物和碎屑。
概要
对电极组合件的高指数顶层、导电层以及可能还对高指数底层进行烧蚀来成形图案是很准确而有效的。但是，这种方法不可能适用于所有的材料和结构。也并不是所用的图案成形操作都需要在激光烧蚀装置中使用高分辨率图像文件。此外，将激光烧蚀装置加到现有的生产设备中也不是件易事。
一方面，本发明是一种形成电极的方法，该方法包括依次在基底上形成高指数底层、导电层和导电率至少为4008 1/平方的高指数顶层；然后化学蚀刻该高指数底层、顶部高蚀刻层和导电层，在导电层中形成电极。
另一方面，本发明是一个基本上透明的电极组合件，该组合件包括一个基底，在其上面依次沉积高指数底层、金属导电层和导电率至少为4008 1/平方的高指数顶层。该导电层包括许多分隔的电极，这些电极是化学蚀刻该高指数底层、高指数顶层和导电层而形成的。
又一方面，本发明是一种包括有基本上透明电极组合件的显示设备。该电极组合件包括一个基底，在其上面依次沉积高指数底层、金属导电层和导电率至少为4008 1/平方的高指数顶层。该导电层包括许多分隔的电极，这些电极是化学蚀刻该高指数底层、高指数顶层和导电层而形成的。
另一方面，本发明是一种有这种基本上透明电极组合件的电子设备。
下面的说明书中将给出本发明一个或多个实施方式的详细描述。从这些描述和权利要求书，将可理解本发明的其它特征、目标和优点。
详细的描述
用于本发明方法的基底，可由具有足够机械完整性和足够光滑的表面，便于在其上面形成电极的任何材料制得。所述基底，与电极组合件的其它层一样，较佳是足够地透明，因此可用于液晶显示器中。可使用玻璃基底，但通常较佳的是由合成的树脂制得基底。为此目的的优选树脂包括如聚醚砜、聚(烷基)丙烯酸酯、纤维素二乙酸酯、聚碳酸酯、聚酯、从Lonza AG(Basel，瑞士)得到的名为“POKALON HT”的高玻璃转变温度(Tg)聚碳酸酯共聚物，以及聚(二(环戊二烯)缩合物)，如从Lonza AG(Basel，瑞士)购得的名为“TRANSPHAN”的材料。这种材料是由日本合成橡胶有限公司(Japan Synthetic Rubber Co.Ltd.，东京，日本)名为“ARTON”的聚合物制得的膜，它的式子由制造者给出如下：
(其中X是极性基团)
可在该基底的一个或两个表面上施加涂层，提供防止气体或水分的屏障，和/或改进该基底的硬度和抗刮伤性能，和/或增强高指数层对基底的附着。例如，可将一种硬的聚合物涂覆到基底的一个或两个表面上。这种硬涂层的厚度一般约为1-15φm，较佳约为2-4φm。可采用适当的聚合材料的游离基聚合(热引发或紫外辐照引发)使该涂层聚合。特别优选的硬涂层用的是Tekra公司(New Berlin，WI)的名为“TERRAPIN”的丙烯酸树脂涂料。
可在基底的一个或两个表面上施加薄的氧化硅(SiOx)层(通常为10-40nm，较佳约为30nm)，此层可作为最终形成的液晶显示装置的气体和水分的屏障，并作为附着促进剂，以改善高指数底层的附着。术语“氧化硅”在本文中指式SiOx的物质，其中x并不一定等于2。可采用化学蒸气沉积法将这些氧化硅沉积，或者在氧气气氛中溅射硅，因此沉积的物质并不能准确符合纯二氧化硅的化学计量式SiO2。当将硬涂层和氧化硅层都施加到基底上时，可以任何顺序施加两个层。在一优选的实施方式中，将第一氧化硅层施加到基底的表面上，接着依次是硬涂层和第二氧化硅层。
在本方法中，依次将下列层沉积到基底上：高指数底层、金属导电层和顶部高深刻层。可采用各种技术沉积这些层，例如电子束和热蒸发技术，但是，较佳采用溅射或化学蒸气沉积法沉积这些层。特别优选采用dc溅射法，但也可采用RF、磁控管以及反应性溅射和低压等离子体增强和激光增强的化学蒸气沉积法。当使用优选的塑料基底时，这三层中的每一层都应在不高于约170EC的温度下沉积到基底上，以免对塑料基底造成损伤。过程的温度限制随所使用的确切基底材料而异。例如，对于TRANSPHAN基底，沉积温度应不大于约160-165EC。
靠近基底的高指数底层可以是电绝缘的或导电的。一般优选绝缘材料，因此，如果高指数底层的任何部分在形成图案步骤后仍保留在邻近的两个电极之间，则所保留的部分不会引起电极间的短路。这种短路当然是不可以的，因为它在效果上将会使两个邻近的电极变成一个电极，会不利地影响使用了电极组合件的液晶显示器或触摸屏的质量。但是，如果形成图案的条件确保高指数底层在形成图案后没有留下，则可使用导电性的高指数层。
不管是绝缘的还是导电的，高指数底层通常是由金属氧化物形成。可用于高指数底层的氧化物有氧化铟(In2O3)、二氧化钛(TiO2)、氧化镉(CdO)、氧化镓铟、五氧化二铌(Nb2O5)和氧化铌锡(ITO)。优选ITO。正如形成液晶显示组合件用的电极这一领域里熟练的技术人员所周知的〔例如，可参见Patel等人，《监测和控制采用DC溅射法将反应性ITO沉积在柔性基底上的方法》(Methods of monitoring andcontrol of reactive ITO deposition process on flexible substrates with DC sputtering)，真空涂层学会第39界年会技术会议汇刊(Society of Vacuum Coaters 39th AnnualTechnical Conference Proceedings)，441-45(1996)；和Gibbons等人，《用于显示应用的ITO涂层》，真空涂层学会第40界年会技术会议汇刊，216-220(1997)〕，改变氧化物层沉积的条件，可在几个数量级范围内控制这些金属氧化物层的导电率。对于优选的dc溅射沉积法，相关的条件包括温度、反应器压力、氧的分压、dc偏置和沉积速率。也可使用掺杂法来控制绝缘层的导电性。通常，绝缘层的厚度约为20-80nm。
邻近基底的高指数底层(以及高指数顶层)中所需的折射指数，在一定程度上根据装上本发明电极组合件的最终装置中存在的其它层而改变。通常，在550nm测量的高指数层的折射率要超过1.6，可容易地将该优选的金属氧化物高指数层制成折射率超过1.9，如上述文献中所述。
导电层由能采用所使用的沉积法沉积并具有足够的导电率能在最终的电极组合件中产生所需低电阻的任何材料制得。较佳的是，该导电层是金属或金属合金，最佳是包含金、银中的至少一种和金/银合金(例如美国专利第4,234,654号中所述的合金)。由于金会提高导电层的抗腐蚀性，所以一般需要这个层是在一个面或两个面上涂有较薄的金层的一层银。例如，已发现，10nm厚的银层夹在两层1nm厚的金层之间可产生良好的效果。导电层的总厚度一般约为5-20nm。
形成高指数顶层的优选材料和方法与形成高指数底层的一样，不同的是顶部层沉积的条件要改变，使该顶部层具有相当大的导电率。通常在组合件的整个表面上测量电极组合件中使用的层的电阻，导电率至少约为4008 1/平方的高指数顶层可产生满意的结果，优选的是导电率约为100-2008 1/平方的高指数层。高指数顶层的厚度优选约为20-100nm。
表1列出高指数底层、导电层和高指数顶层的组合的实施例。
表1
| 高指数底层 | 导电层 | 高指数顶层 |
| ITO，40nm | Ag，10nm | ITO，47nm |
| ITO，40-42nm | Ag，9-10nm/Au，1-1.5nm | ITO，47nm |
| ITO，40-42nm | Au，1nm/Ag，10nm/Au，1nm | ITO，47nm |
| SnO2，42nm | Ag，10-12nm | ITO，47nm |
| SnO2，42nm | Ag，9-10nm/Au，1-1.5nm | ITO，47nm |
| SnO2，42nm | Au，1nm/Ag，10nm/Au，1nm | ITO，47nm |
将高指数底层、导电层和高指数顶层沉积好后，采用湿蚀刻法在高指数顶层和导电层上形成图案，从而在导电层上形成许多分隔的电极。图案的形成较佳应完全延伸贯穿高指数顶层和导电层，以确保导电层上形成的邻近电极间没有短路。在实践上，图案的形成通常完全贯穿到邻近基底的高指数底层，但是，如先前所述，较佳的是，高指数底层具有足够的电阻，以防止图案形成后如果有高指数底层保留的话，会导致邻近电极间不利的电流短路。
在本发明的湿蚀刻法中，将已在其上依次涂上高指数底层、导电层和高指数顶层的基底在一蚀刻浴中进行处理。湿蚀刻法可以包括多个步骤，也可以是一个步骤。蚀刻浴的组成可根据高指数顶层和高指数底层以及导电层的材料而有很大的差别。较佳的是，蚀刻液的组成应选择能除去高指数底层、高指数顶层和导电层，以便在导电层中形成电极。
例如，如果电极结构体中使用表1中的那些物质，并且高指数底层是ITO，则蚀刻液可包括含H2SO4的第一浴、含FeCl3的第二浴和含H2SO4的第三浴。然后首先将电极结构体浸入第一H2SO4浴中，对高指数顶层进行蚀刻，接着浸入第二FeCl3浴中，对导电层进行蚀刻，最后浸入第三H2SO4浴中，对高指数底层进行蚀刻。
但较佳的是，蚀刻浴是包含H2SO4与FeCl3在内的一个浴。此蚀刻浴中H2SO4和FeCl3的比例可根据溶液温度和电极结构体在该溶液中的停留时间而有极大的变化。例如，假设基底涂覆了表1中各层的材料，则可制备约3重量％浓度为37％H2SO4的原液和约0.01重量％FeCl3的原液。这些原液可以特定的比例组合，产适当的蚀刻液。3％H2SO4原液和0.01％FeCl3原液的比例范围较佳应约为1∶1到约1∶6，较佳约为2∶1到5∶1，最佳约为4∶1到5∶1。
蚀刻液的温度也可有很大的不同，但蚀刻温度稍微高于室温是较佳的，这样将要获得满意的蚀刻而需要的溶液成分的浓度以及停留时间减少到最小程度。使用上述浓度的优选成分，溶液的温度较佳应约为20-60℃，更佳应约为30-40℃，最佳应约为35℃。蚀刻溶液的温度较佳应维持在约±5℃的范围内。
停留时间也可根据蚀刻液中的成分、浓度和蚀刻液的温度而有较大的不同，但是停留时间应尽可能地减到最短，以便在一生产规程中完成蚀刻过程。使用上述优选的成分和温度，停留时间应约为1-10分钟，一般是约1-5分钟，较佳约为3-5分钟，更佳约为3.5-5分钟。
蚀刻浴较佳要搅拌，以帮助从电极组合件上除去残留物。可采用已知的任何技术搅拌蚀刻浴，如使用搅拌棒或超声波搅拌。优选采用频率约为40-50kHz的超声波搅拌，对于上述列出的蚀刻液成分，频率约为40的超声波搅拌特别合适。
可用几种方法评估使用上述蚀刻浴获得的蚀刻质量。可将所需的蚀刻线宽与实际的蚀刻线宽比较，蚀刻的线可以肉眼观察，以确定残留物的存在与否。此外，可测量蚀刻区域的导电率，低导电率表明所测量的区域蚀刻得更为完全。
蚀刻过程结束后，还可以用水或其它清洗液清洗样品，去除残留物并使样品表面洁净。在此可用的清洗步骤后，将许多导体附着到在图案形成步骤中形成的分隔的电极上的高指数顶层上。这些导体就通过导电的顶层而与电极呈电接触。由此形成的电极组合件可用于无源型液晶显示器、触摸显示屏或其它平板显示器。
已发现，可容易地形成在550nm具有约80％透明度、小于约20欧姆/方块的薄层电阻(20ohms per square sheet resistance)的本发明电极组合件。这种电极组合件很容易装入商业质量的显示装置，如液晶显示器、触摸显示屏、场致发光显示屏和胆甾醇型显示器中。这些显示器可用在许多电子装置，如计算机、电话、寻呼机、手持电子指挥器等中。
实施例
制备了依序具有下述层结构的电极组合件：硬涂层/TRANSPHAH基底/硬涂层/30nm厚SiOx/38.5nm厚ITO高指数底层/1nm厚Au导电层/8nm厚Ag/1nm厚Au/35nm厚ITO高指数顶层。建立了一个包括改变的温度、H2SO4(3％)和FeCl3(0.01％)的浓度比和时间的实验矩阵，并评估了所获得的实际蚀刻线宽的质量与所需的(光致抗蚀间隙)蚀刻线宽相比。所试验的温度为30℃、35℃和40℃；浓度比为2∶1、4∶1和5∶1，停留时间是1分钟、3分钟和5分钟。所有的溶液都从相同的H2SO4(3％)和FeCl3(0.01％)原液配制。在40kHz或47kHz的超声波装置中对电极组合件蚀刻。
2∶1的H2SO4(3％)和FeCl3(0.01％)之比被证明在本实施例的条件下太浓了，导致过分蚀刻，无论与温度、时间和超声波浴频率如何。
4∶1的H2SO4(3％)与FeCl3(0.01％)之比在本实施例的一些条件下产生良好的结果，但是，在此比例下进行的蚀刻，其所产生的结果对温度和时间非常敏感。
对于5∶1的溶液，温度有10度的变化也看不出蚀刻质量有多大改变(对于相同的时间间隔)。最好的结果出现在3.5分钟和5分钟。
对于本实施例的电极组合件，最优的蚀刻溶液是5∶1的H2SO4(3％)和FeCl3(0.01％)。溶液应在超声波浴中维持在35±5℃，导体浸入的停留时间应为3.5到5分钟。在这些条件下，我们没有观察到过分蚀刻或有残留物的情况。使用频率为40kHz和47kHz的两种超声波浴，都产生良好的结果。
已描述本发明的一些实施例。但是，应理解在不偏离本发明的实质和范围的情况下可作出各种改动。
Claims (20)
1.一种形成电极的方法，该方法包括：
在基底上依次形成高指数底层、导电层和导电率至少为4008 1/平方的高指数顶层；
用含有H2SO4和FeCl3的蚀刻液对所述高指数底层、高指数顶层和导电层进行化学蚀刻，在导电层中形成电极。
2.如权利要求1所述的方法，其特征在于，所述蚀刻步骤在含有H2SO4和FeCl3的一个浴中进行。
3.如权利要求2所述的方法，其特征在于，所述浴含比例为2∶1到5∶1的3％H2SO4溶液与0.01％FeCl3溶液。
4.如权利要求2所述的方法，其特征在于，浴中的所述比例为4∶1到5∶1。
5.如权利要求2所述的方法，其特征在于，所述高指数顶层和高指数底层以及导电层停留在浴中的停留时间为1-5分钟。
6.如权利要求2所述的方法，其特征在于，所述高指数顶层和高指数底层以及导电层在浴中的停留时间为3-5分钟。
7.如权利要求2所述的方法，其特征在于，所述浴的温度为30-40℃。
8.如权利要求2所述的方法，其特征在于，所述方法还包括对该浴进行搅拌。
9.如权利要求2所述的方法，其特征在于，所述浴是个超声波浴。
10.如权利要求1所述的方法，其特征在于，所述方法还包括将许多导体连接到位于分隔的电极上的所述高指数顶层的部分。
11.如权利要求1所述的方法，其特征在于，所述基底是选自醚砜、聚(烷基)丙烯酸酯、纤维素二乙酸酯、聚碳酸酯、聚酯、聚碳酸酯共聚物和聚(二(环戊二烯)缩合物)的材料。
12.如权利要求1所述的方法，其特征在于，所述基底还包括在其至少一个表面上的氧化硅层。
13.如权利要求1所述的方法，其特征在于，所述基底在其表面上包括下述顺序的层：第一氧化硅层、硬涂层和第二氧化硅层。
14.一种基本上透明的电极组合件，它包括：
具有依次沉积于其上的高指数底层、金属导电层和导电率至少为4008 1/平方的高指数顶层的基底，所述导电层中有由化学蚀刻所述高指数底层、高指数顶层和导电层而形成的许多分隔的电极，其中，该电极组合件在550nm具有80％透明度、小于20欧姆/方块的薄层电阻。
15.如权利要求14所述的电极组合件，其特征在于，所述基底是选自醚砜、聚(烷基)丙烯酸酯、纤维素二乙酸酯、聚碳酸酯、聚酯、聚碳酸酯共聚物和聚(二(环戊二烯)缩合物)的材料。
16.如权利要求14所述的电极组合件，其特征在于，所述化学蚀刻在含有H2SO4和FeCl3的一个浴中进行。
17.如权利要求14所述的电极组合件，其特征在于，所述基底还包括在其至少一个表面上的氧化硅层。
18.如权利要求14所述的电极组合件，其特征在于，所述基底在其表面上依次形成有第一氧化硅层、硬涂层和第二氧化硅层。
19.一种显示装置，它包括基本上透明的电极组合件，该电极组合件包括具有依次沉积在其上的高指数底层、金属导电层和导电率至少为4008 1/平方的高指数顶层的基底，所述导电层中有由化学蚀刻所述高指数底层、高指数顶层和导电层而形成的许多分隔的电极，其中，该电极组合件在550nm具有80％透明度、小于20欧姆/方块的薄层电阻。
20.一种电子装置，它包括权利要求19所述的显示装置。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/570,310 US6652981B2 (en) | 2000-05-12 | 2000-05-12 | Etching process for making electrodes |
| US09/570,310 | 2000-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1429409A CN1429409A (zh) | 2003-07-09 |
| CN1310341C true CN1310341C (zh) | 2007-04-11 |
Family
ID=24279140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB018093361A Expired - Fee Related CN1310341C (zh) | 2000-05-12 | 2001-04-13 | 制造电极的蚀刻方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6652981B2 (zh) |
| EP (1) | EP1284023A2 (zh) |
| JP (1) | JP2003533890A (zh) |
| KR (1) | KR20030007605A (zh) |
| CN (1) | CN1310341C (zh) |
| AU (2) | AU5538301A (zh) |
| WO (1) | WO2001088998A2 (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6379509B2 (en) * | 1998-01-20 | 2002-04-30 | 3M Innovative Properties Company | Process for forming electrodes |
| JP2002343562A (ja) * | 2001-05-11 | 2002-11-29 | Pioneer Electronic Corp | 発光ディスプレイ装置及びその製造方法 |
| KR100616543B1 (ko) * | 2004-04-28 | 2006-08-29 | 삼성전기주식회사 | 실리콘기판 상에 질화물 단결정성장방법, 이를 이용한질화물 반도체 발광소자 및 그 제조방법 |
| EP1701395B1 (de) * | 2005-03-11 | 2012-09-12 | Novaled AG | Transparentes lichtemittierendes Bauelement |
| JP4738212B2 (ja) * | 2006-03-06 | 2011-08-03 | カシオ計算機株式会社 | 液晶表示装置の製造方法 |
| US8264466B2 (en) * | 2006-03-31 | 2012-09-11 | 3M Innovative Properties Company | Touch screen having reduced visibility transparent conductor pattern |
| US7874923B2 (en) * | 2006-09-27 | 2011-01-25 | Igt | Multiple touchscreen sensors on a monolithic structure |
| TWI348116B (en) * | 2007-10-09 | 2011-09-01 | Tpk Touch Solutions Inc | In-mould molding touch module and method for manufactuing the same |
| US8182281B2 (en) * | 2007-10-30 | 2012-05-22 | Commscope, Inc. Of North Carolina | Devices for connecting conductors of twisted pair cable to insulation displacement contacts |
| EP2257969B1 (en) | 2008-02-28 | 2017-12-20 | 3M Innovative Properties Company | Methods of patterning a conductor on a substrate |
| EP2260366B1 (en) | 2008-02-28 | 2018-09-19 | 3M Innovative Properties Company | Touch screen sensor having varying sheet resistance |
| KR101397200B1 (ko) | 2008-02-28 | 2014-05-20 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 저 가시성 도체를 구비한 터치 스크린 센서 |
| JP2011513846A (ja) | 2008-02-28 | 2011-04-28 | スリーエム イノベイティブ プロパティズ カンパニー | タッチスクリーンセンサ |
| DE102011052626A1 (de) * | 2011-08-12 | 2013-02-14 | Seereal Technologies S.A. | Flüssigkristalleinrichtung |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0265110A1 (en) * | 1986-10-06 | 1988-04-27 | CPFilms, Inc. | Transparent electrode |
| EP0421429A2 (en) * | 1989-10-03 | 1991-04-10 | Sharp Kabushiki Kaisha | Electrode pattern forming method |
| JPH11282383A (ja) * | 1998-01-13 | 1999-10-15 | Toppan Printing Co Ltd | 電極基板およびその製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944993B2 (ja) | 1978-07-11 | 1984-11-02 | 帝人株式会社 | 積層体 |
| US4838656A (en) | 1980-10-06 | 1989-06-13 | Andus Corporation | Transparent electrode fabrication |
| US5293546A (en) * | 1991-04-17 | 1994-03-08 | Martin Marietta Corporation | Oxide coated metal grid electrode structure in display devices |
| TW250618B (zh) * | 1993-01-27 | 1995-07-01 | Mitsui Toatsu Chemicals | |
| EP0660381A1 (en) | 1993-12-21 | 1995-06-28 | Koninklijke Philips Electronics N.V. | Method of manufacturing a transparent conductor pattern and a liquid crystal display device |
| US5667853A (en) * | 1995-03-22 | 1997-09-16 | Toppan Printing Co., Ltd. | Multilayered conductive film, and transparent electrode substrate and liquid crystal device using the same |
| US5911899A (en) * | 1995-06-15 | 1999-06-15 | Mitsui Chemicals, Inc. | Corrosion-proof transparent heater panels and preparation process thereof |
| JP3520627B2 (ja) * | 1995-09-14 | 2004-04-19 | ソニー株式会社 | 光反射防止部材及びその作製方法、並びに陰極線管 |
| TW446637B (en) * | 1996-05-28 | 2001-07-21 | Mitsui Chemicals Inc | Transparent laminates and optical filters for displays using the same |
| US5861064A (en) * | 1997-03-17 | 1999-01-19 | Fsi Int Inc | Process for enhanced photoresist removal in conjunction with various methods and chemistries |
| TW409261B (en) | 1998-01-13 | 2000-10-21 | Toppan Printing Co Ltd | A electrode plate with transmission-type or reflection-type multilayer electroconductive film, and the process for producing the electrode plate |
| US6379509B2 (en) | 1998-01-20 | 2002-04-30 | 3M Innovative Properties Company | Process for forming electrodes |
-
2000
- 2000-05-12 US US09/570,310 patent/US6652981B2/en not_active Expired - Fee Related
-
2001
- 2001-04-13 EP EP01928536A patent/EP1284023A2/en not_active Withdrawn
- 2001-04-13 CN CNB018093361A patent/CN1310341C/zh not_active Expired - Fee Related
- 2001-04-13 JP JP2001584497A patent/JP2003533890A/ja active Pending
- 2001-04-13 AU AU5538301A patent/AU5538301A/xx active Pending
- 2001-04-13 KR KR1020027015090A patent/KR20030007605A/ko active IP Right Grant
- 2001-04-13 AU AU2001255383A patent/AU2001255383B2/en not_active Ceased
- 2001-04-13 WO PCT/US2001/012208 patent/WO2001088998A2/en active IP Right Grant
-
2002
- 2002-06-12 US US10/170,105 patent/US6838013B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0265110A1 (en) * | 1986-10-06 | 1988-04-27 | CPFilms, Inc. | Transparent electrode |
| EP0421429A2 (en) * | 1989-10-03 | 1991-04-10 | Sharp Kabushiki Kaisha | Electrode pattern forming method |
| JPH11282383A (ja) * | 1998-01-13 | 1999-10-15 | Toppan Printing Co Ltd | 電極基板およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030007605A (ko) | 2003-01-23 |
| US6652981B2 (en) | 2003-11-25 |
| WO2001088998A3 (en) | 2002-11-28 |
| CN1429409A (zh) | 2003-07-09 |
| JP2003533890A (ja) | 2003-11-11 |
| EP1284023A2 (en) | 2003-02-19 |
| AU5538301A (en) | 2001-11-26 |
| WO2001088998A2 (en) | 2001-11-22 |
| AU2001255383B2 (en) | 2005-09-29 |
| US6838013B2 (en) | 2005-01-04 |
| US20020182386A1 (en) | 2002-12-05 |
| US20030129424A1 (en) | 2003-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1310341C (zh) | 制造电极的蚀刻方法 | |
| US6379509B2 (en) | Process for forming electrodes | |
| CN102956158B (zh) | 电子部件用层叠布线膜以及覆盖层形成用溅射靶材 | |
| AU2001255383A1 (en) | Etching process for making electrodes | |
| TW503405B (en) | Method of manufacturing substrate having transparent conductive film, substrate having transparent conductive film manufactured using the method, and touch panel using the substrate | |
| JP3257913B2 (ja) | 透明電極 | |
| CN109797396B (zh) | 银膜蚀刻液组合物、用它的蚀刻方法及金属图案形成方法 | |
| JP3176812B2 (ja) | 透明導電性フィルム | |
| KR100989409B1 (ko) | 다층구조 플렉시블 투명전극 및 그 제조방법 | |
| CN102543266A (zh) | 具有铜导线的透明导电膜 | |
| KR20190109215A (ko) | 은 함유 박막 식각액 조성물 및 이를 이용한 표시장치용 어레이기판의 제조방법 | |
| JPH0874033A (ja) | 液晶表示用電極 | |
| JP3318142B2 (ja) | 透明導電性フィルム | |
| JPH08132554A (ja) | 透明導電性フィルム | |
| KR20200094647A (ko) | 투명 도전성 필름 | |
| CN104882192B (zh) | 一种ito导电膜 | |
| JP2006134789A (ja) | 非晶質透明導電膜及び非晶質透明導電膜積層体並びにこれらの製造方法 | |
| US6844222B2 (en) | Method for reducing contact impedance of thin film transistor | |
| KR101171663B1 (ko) | 시인성 향상과 인쇄층을 겸비한 터치패널 | |
| JP2012150944A (ja) | 透明導電膜 | |
| CN108399030B (zh) | 电极结构及电极结构的制作方法 | |
| KR101385972B1 (ko) | 시인성 향상과 인쇄층을 겸비한 터치패널 | |
| KR101343503B1 (ko) | 산화아연 박막의 패터닝을 위한 식각액 및 이를 이용한 액정표시장치의 제조방법 | |
| CN117228964A (zh) | 一种ito导电膜玻璃的制备方法及ito导电膜玻璃 | |
| CN1632679A (zh) | 液晶显示组件的铜导线结构及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |