CN1310294C - Method for filling gap and producing method for shallow kennel separated structure - Google Patents
Method for filling gap and producing method for shallow kennel separated structure Download PDFInfo
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- CN1310294C CN1310294C CNB2003101034420A CN200310103442A CN1310294C CN 1310294 C CN1310294 C CN 1310294C CN B2003101034420 A CNB2003101034420 A CN B2003101034420A CN 200310103442 A CN200310103442 A CN 200310103442A CN 1310294 C CN1310294 C CN 1310294C
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Abstract
The present invention relates to a method for filling gaps and a producing method for a shallow kennel separated structure. The method for filling gaps comprises: firstly, a substrate is provided, and a plurality of convex parts are formed on the substrate. Besides, the gaps exist among the convex parts. Subsequently, a first dielectric layer is formed on the substrate so as to fill the gaps among the convex parts and covers the convex parts, wherein a plurality of slits exist in the formed first dielectric layer, and the slit positions are higher than tops of the convex parts. Then, part of first dielectric layer is removed by a chemico-mechanical grinding method so as to open the slits, and thus, a plurality of openings are formed. Afterwards, the width of the openings is enlarged by an anisotropic etch process. As last, a second dielectric layer is formed on the first dielectric layer so as to fill the openings. The present invention can avoid the existing the problem that the slits can be generated between the dielectric material layers when the dielectric material is filled into the gaps among the convex parts in the existing known method. As a consequence, the present invention is suitable for practical application. Besides, the present invention has the utilizing value on industry.
Description
Technical field
The present invention relates to a kind of manufacture of semiconductor, particularly relate to a kind of method in gap and manufacture method of shallow slot isolation structure of filling.
Background technology
In manufacture of semiconductor, the binding of each element mainly is by lead.Wherein, be used for linking lead and integrated circuit component and up and down the part of two layer conductors then be called connector.Wherein, for do not allow lead and semiconductor element and up and down two layer conductors directly contact and be short-circuited (have connector part except), between lead and the semiconductor element and up and down between two layer conductors must with dielectric layer (that is, so-called inner metal dielectric layer (Inter-Metal Dielectrics, IMD)) is isolated.
Yet along with the increase of semiconductor element aggregation degree, size of component can be more and more little, and make its depth-width ratio of gap (Aspect Ratio) between lead can become big, so will cause inserting in the gap dielectric material comparison difficulty that becomes.On the other hand, when the distance between conductor and other conductor diminished, the resistance of lead itself and the parasitic capacitance size between lead were for influencing one of decisive key of element speeds.Therefore, in order to still have good service speed on the semiconductor element that size is dwindled, ask for something is just arranged for the dielectric material between lead.Dielectric material is not only wanted and can be inserted fully in the gap of conductor, and need have good flatness.In addition, dielectric material also will can stop the transmission of moisture, and has low dielectric constant, to reduce the parasitic capacitance between lead.
Generally speaking, because the dielectric layer that high density plasma enhanced chemical vapor deposition method (HDPCVD) is deposited at the dielectric layer that chemical vapour deposition technique deposited that all is better than utilizing other aspect the characteristic of density, obstruct moisture content and planarization, therefore has been widely used in and has formed the oxide of filling the gap.But, improve constantly owing to the element integration in recent years, so its depth-width ratio of the gap between the lead is more and more big.So, even utilize the high density plasma enhanced chemical vapor deposition method also no longer the gap can be filled up fully.That is after deposition, still have the slit existence in the dielectric materials layer, so may influence follow-up processing procedure acceptance rate.
In addition, the problem that the gap can't be filled up of above-mentioned dielectric material also can occur in the processing procedure of shallow slot isolation structure.When the element integration is more and more high, be that the scope of each active region of expression is more and more little, and the shallow slot isolation structure between active region also can relatively dwindle.In other words, the depth-width ratio of irrigation canals and ditches can be more and more big along with the raising of element integration, therefore when carrying out the processing procedure of shallow slot isolation structure, utilizes the high density plasma enhanced chemical vapor deposition method also to be difficult for dielectric material is filled up irrigation canals and ditches fully.So also may influence the acceptance rate of successive process.So, how dielectric material is filled in intactly that (or in irrigation canals and ditches) are problem demanding prompt solutions in the gap.
This shows that the method in above-mentioned existing filling gap and the manufacture method of shallow slot isolation structure still have defective, and demand urgently further being improved.Defective for the manufacture method of the method that solves existing filling gap and shallow slot isolation structure, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that the manufacture method of the method in above-mentioned existing filling gap and shallow slot isolation structure exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation, in the hope of the method for founding a kind of new filling gap and the manufacture method of shallow slot isolation structure, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective of the method existence in existing filling gap, and provide a kind of method of new filling gap, technical problem to be solved is to make it can solve existing prior art method to utilize the high density plasma enhanced chemical vapor deposition method to fill the gap, can't make that but dielectric material fills up the problem in gap fully, thereby be suitable for practicality more, and have the value on the industry.
Another object of the present invention is to, overcome the defective of the manufacture method existence of existing shallow slot isolation structure, a kind of manufacture method of new shallow slot isolation structure is provided, technical problem to be solved is to make it can solve existing known manufacture method when carrying out the shallow slot isolation structure processing procedure, dielectric material can't fill up irrigation canals and ditches, and make and have apertured problem in the dielectric materials layer, thereby be suitable for practicality more, and have the value on the industry.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of method of filling the gap that the present invention proposes, it may further comprise the steps: a substrate is provided, and has been formed with several protuberances in this substrate, and have a gap between each those protuberance; In this substrate, form one first dielectric layer, inserting this gap between those protuberances, and cover those protuberances, have several slits in wherein formed this first dielectric layer, and the position in those slits is the tops that are higher than those protuberances; Carry out a chemical mechanical milling method, remove this first dielectric layer of part,, and form several openings so that those slits open; Carry out an anisotropic etching processing procedure, to enlarge the width of those openings; And on this first dielectric layer, form one second dielectric layer, to fill up those openings.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The method in aforesaid filling gap, the formation method of wherein said first dielectric layer comprises a high density plasma enhanced chemical vapor deposition method.
The method in aforesaid filling gap, wherein said those protuberances comprise several gate structures.
The method in aforesaid filling gap, wherein said those protuberances comprise several conductor structures.
The method in aforesaid filling gap, wherein said anisotropic etching processing procedure comprises a wet etch process, and the employed etching solution of this wet etch process comprises a hydrofluoric acid solution.
The method in aforesaid filling gap, wherein after the step of this substrate was provided, with before forming the step of this first dielectric layer in this substrate, the surface that more is included in those protuberances and this substrate formed a lining.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.The manufacture method of a kind of shallow slot isolation structure that proposes according to the present invention, it may further comprise the steps: provide a substrate, and this substrate has been formed with a pad oxide and a cover curtain layer of patterning, and several irrigation canals and ditches; On this cover curtain layer, form one first dielectric layer,, have several slits in wherein formed this first dielectric layer, and the top in those slits is the surfaces that are higher than this cover curtain layer to insert in those irrigation canals and ditches; Remove this first dielectric layer of part,, and form several openings so that those slits open; Remove this first dielectric layer of those opening sidewalls, to enlarge the width of those openings; On this first dielectric layer, form one second dielectric layer, to fill up those openings; And remove this first dielectric layer and this second dielectric layer beyond those irrigation canals and ditches.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid shallow slot isolation structure, the formation method of wherein said first dielectric layer comprises a high density plasma enhanced chemical vapor deposition method.
The manufacture method of aforesaid shallow slot isolation structure, the wherein said method that removes this first dielectric layer of part comprises a chemical mechanical milling method.
The manufacture method of aforesaid shallow slot isolation structure, the wherein said method that removes this first dielectric layer of those opening sidewalls comprises an anisotropic etching processing procedure.
The manufacture method of aforesaid shallow slot isolation structure, wherein said anisotropic etching processing procedure comprises a wet etch process, and the employed etching solution of this wet etch process comprises a hydrofluoric acid solution.
The manufacture method of aforesaid shallow slot isolation structure wherein after the step of this substrate is provided, with before forming the step of this first dielectric layer on this cover curtain layer, more is included on the surface of those irrigation canals and ditches and forms a lining.
The manufacture method of aforesaid shallow slot isolation structure wherein after the step of this first dielectric layer beyond removing those irrigation canals and ditches and this two dielectric layer, more comprises removing this cover curtain layer and this pad oxide.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of method of filling the gap that the present invention proposes, it may further comprise the steps: a substrate is provided, and has been formed with at least one first opening in this substrate; Form one first dielectric layer in this substrate, inserting in this first opening, and cover this substrate, have at least one slit in this first dielectric layer, this slit is the surface that is positioned at this opening top and is higher than this substrate; Remove this first dielectric layer of part,, and form one second opening so that this slit opens; Remove this first dielectric layer of this second opening sidewalls, to enlarge the width of this second opening; And on this first dielectric layer, form one second dielectric layer, to fill up this second opening.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The method in aforesaid filling gap, the formation method of wherein said first dielectric layer comprises a high density plasma enhanced chemical vapor deposition method.
The method in aforesaid filling gap, the wherein said method that removes this first dielectric layer of part comprises a chemical mechanical milling method.
The method in aforesaid filling gap, the wherein said method that removes this first dielectric layer of this second opening sidewalls comprises an anisotropic etching processing procedure.
The method in aforesaid filling gap, wherein said anisotropic etching processing procedure comprises a wet etch process, and the employed etching solution of this wet etch process comprises a hydrofluoric acid solution.
The method in aforesaid filling gap, wherein said first opening comprises the gap between several protuberances, and those protuberances comprise several conductor structures and several gate structures one of them.
The method in aforesaid filling gap, wherein said first opening is the irrigation canals and ditches of the shallow slot isolation structure of institute's desire formation.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of method of filling the gap, and this method is that a substrate is provided earlier, and has been formed with several protuberances in this substrate, and is to have the gap between each protuberance.Afterwards, in substrate, form first dielectric layer, inserting the gap between these protuberances, and cover these protuberances, have several slits in wherein formed first dielectric layer, and the position in these slits is the tops that are higher than protuberance.Then, carry out chemical mechanical milling method, remove part of first dielectric layer,, and form several openings so that the slit opens.Then, carry out the anisotropic etching processing procedure, to enlarge the width of these openings.Continue it, on first dielectric layer, form second dielectric layer, to fill up opening.
The present invention proposes another kind of method of filling the gap, and this method is that a substrate is provided earlier, and has been formed with at least one first opening in this substrate.Afterwards, in this substrate, form first dielectric layer, inserting in first opening, and cover substrate, have at least one slit in this first dielectric layer, and this slit is the surface that is positioned at the opening top and is higher than substrate.Then, remove part of first dielectric layer,, and form one second opening so that this slit opens.Then, remove first dielectric layer of this second opening sidewalls, to enlarge the width of second opening.Continue it, on first dielectric layer, form second dielectric layer, to fill up second opening.
Because the present invention is after forming first dielectric layer, open in the slit that utilizes chemical mechanical milling method will be present in first dielectric layer earlier, and also the utilize the anisotropic etching enlarged openings afterwards width of (or second opening).Therefore, when follow-up formation second dielectric layer, opening (or second opening) can be filled up fully, make the gap (or first opening) of each protuberance fill up dielectric material fully and form.
The present invention also proposes a kind of manufacture method of shallow slot isolation structure, and this method is that a substrate is provided earlier, and this substrate has been formed with pad oxide and cover curtain layer and several irrigation canals and ditches of patterning.Afterwards, on cover curtain layer, form first dielectric layer, to insert in these irrigation canals and ditches.Wherein, have several slits in formed first dielectric layer, and the top in these slits is the surfaces that are higher than cover curtain layer.Then, remove part of first dielectric layer,, and form several openings so that these slits open.Then, remove first dielectric layer of these opening sidewalls, with the width of enlarged openings.Continue it, on first dielectric layer, form second dielectric layer, to fill up these openings.Afterwards, remove these irrigation canals and ditches first dielectric layer and second dielectric layer in addition.
Because the present invention after forming first dielectric layer, will be present in slit in first dielectric layer earlier and open and become opening, enlarge afterwards and with the width of opening.Therefore, when follow-up formation second dielectric layer, opening can be filled up fully, and form seamless shallow slot isolation structure.
By technique scheme, the present invention fills the method in gap, can solve existing prior art method and utilize the high density plasma enhanced chemical vapor deposition method to fill the gap, but can't make dielectric material fill up the problem in gap fully.The manufacture method of other shallow slot isolation structure of the present invention, can solve existing known manufacture method when carrying out the shallow slot isolation structure processing procedure, dielectric material can't fill up irrigation canals and ditches, and makes and have apertured problem in the dielectric materials layer, thereby be suitable for practicality more, and have the value on the industry.
In sum, the method in the filling gap that the present invention is special and the manufacture method of shallow slot isolation structure in the time of can avoiding the existing gap of prior art method between protuberance to insert dielectric material, can produce the problem in slit in dielectric materials layer.It has above-mentioned plurality of advantages and practical value, and in class methods, do not see have similar approach to publish or use and really genus innovation, no matter it all has bigger improvement on method or function, have technically than much progress, and produced handy and practical effect, and the method in more existing filling gap and the manufacture method of shallow slot isolation structure have the multinomial effect of enhancement, thereby be suitable for practicality more, extensive value with industry really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Figure 1A to Fig. 1 C is a kind of flow process generalized section of filling the method in gap according to a preferred embodiment of the present invention.
Fig. 2 A to Fig. 2 D is the manufacturing process generalized section according to a kind of shallow slot isolation structure of a preferred embodiment of the present invention.
100,200: substrate 101: gap
102: protuberance 104,208: lining
106,112,210,210a, 216: dielectric layer 108,212: slit
110,110a, 214,214a: opening 202: pad oxide
204: cover curtain layer 206: irrigation canals and ditches
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, the method and its concrete grammar of manufacture method, step, structure, feature and the effect thereof of shallow slot isolation structure in the filling gap that foundation the present invention is proposed, describe in detail as after.
Figure 1A to Fig. 1 C is a kind of flow process generalized section of filling the method in gap according to a preferred embodiment of the present invention.
See also shown in Figure 1A, the method in the filling gap of preferred embodiment of the present invention provides a substrate 100, and has been formed with several protuberances 102 in the substrate 100, and has gap 101 between each protuberance 102.In a preferred embodiment, those protuberances 102 for example are conductor structures, and those conductor structures can be various materials, for example: aluminium, copper, alusil alloy or aluminium copper or copper.In addition, in another preferred embodiment, those protuberances 102 for example are gate structure, transistor, diode or known other semiconductor component structure that can use.
Then, on the surface of these protuberances 102 and substrate 100, form lining 104.Wherein, the material of lining 104 for example is a silica, and its formation method for example is a chemical vapour deposition technique.In addition, the effect of formation lining 104 is that gap 101 its depth-width ratios between the protuberance 102 are reduced.
Afterwards, in this substrate 100, form dielectric layer 106, inserting the gap 101 between these protuberances 102, and cover these protuberances 102.Wherein, have several slits 108 in the formed dielectric layer 106, and the position in these slits 108 can be higher than the top of protuberance 102.In addition, the material of dielectric layer 106 for example is a silica, and its formation method for example is the high density plasma enhanced chemical vapor deposition method.It should be noted that the employed reacting gas of this high density plasma enhanced chemical vapor deposition method, inert gas or the bias voltage of being bestowed, there is no specific restriction, the top that its need make 108 its positions, slit that generated be higher than protuberance 102 gets final product.In a preferred embodiment, this reacting gas for example is silicomethane and oxygen, and inert gas for example is an argon gas.
Then, see also shown in Figure 1B, carry out chemical mechanical milling method (Chemical MechanicalPolishing, be called for short CMP), remove part dielectric layer 106,, and form several openings 110 so that slit 108 opens.Because the position in above-mentioned formed slit 108 is higher than the top of protuberance 102, therefore when carrying out cmp, can under the situation of not damaging protuberance 102, slit 108 be opened.
Then, see also shown in Fig. 1 C, carry out anisotropic etching (Anisotropic Etch) processing procedure, to enlarge the width of these openings 110.Wherein, this anisotropic etching processing procedure for example is a wet etch process, and the employed etching solution of this wet etch process for example is hydrofluoric acid solution (HF).In addition, opening 110 being expanded into opening 110a, mainly is can be so that the depth-width ratio of opening 110 reduces.
Continue it, on dielectric layer 106, form another layer dielectric layer 112, to fill up opening 110a.Wherein, the material of dielectric layer 112 for example is a silica, and the formation method for example is a chemical vapour deposition technique, and its reacting gas for example is silicon tetraethyl acid esters (Tetra-Ethyl-Ortho-Silicate is called for short TEOS).It should be noted that because the depth-width ratio of opening 110a is less, so dielectric material (dielectric layer 106) can fill up opening 110a fully.
Because the present invention is after forming dielectric layer 106, open in the slit 108 that utilizes chemical mechanical milling method will be present in the dielectric layer 106 earlier, and also utilize the width of anisotropic etching enlarged openings 110 afterwards.Therefore, when follow-up another layer of formation dielectric layer 112, opening 110a can be filled up fully, make the gap 101 of each protuberance 102 fill up dielectric material fully and form.
In addition, the method in above-mentioned filling gap be to be applicable to the gap of filling between the various protuberances, and these protuberances for example is conductor structure, gate structure, transistor, diode or known other semiconductor component structure that can use.
Fig. 2 A to Fig. 2 D is the manufacturing process generalized section according to a kind of shallow slot isolation structure of a preferred embodiment of the present invention.
See also shown in Fig. 2 A, the manufacture method of shallow slot isolation structure of the present invention provides substrate 200, and has been formed with pad oxide (pad oxide) 202, cover curtain layer 204 and several irrigation canals and ditches 206 of patterning in this substrate 200.Wherein, the material of pad oxide 202 for example is a silica, and the material of cover curtain layer 204 is silicon nitrides.In addition, the formation method of irrigation canals and ditches 206 for example is that the cover curtain layer 204 with patterning is that etch mask forms it.
Then, form lining 208 on the surface of irrigation canals and ditches 206.Wherein, the material of lining 208 for example is a silica, and its formation method for example is a thermal oxidation method.
Afterwards, in substrate 200, form dielectric layer 210, to insert in the irrigation canals and ditches 206.Wherein, have several slits 212 in the formed dielectric layer 210, and the top in these slits 212 can be higher than the surface of cover curtain layer 204.In addition, the material of dielectric layer 210 for example is a silica, and its formation method for example is the high density plasma enhanced chemical vapor deposition method.It should be noted that the employed reacting gas of this high density plasma enhanced chemical vapor deposition method, inert gas or the bias voltage of being bestowed, there is no specific restriction, the surface that its need make 212 its tops, slit that generated be higher than cover curtain layer 204 gets final product.In a preferred embodiment, this reacting gas for example is silicomethane and oxygen, and inert gas for example is an argon gas.
Then, see also shown in Fig. 2 B, remove the dielectric layer 210 of part,, and form several openings 214 so that slit 212 opens.Wherein, the method for dielectric layer 210 that removes part for example is a chemical mechanical milling method.Because 212 its tops, above-mentioned formed slit can be higher than the surface of cover curtain layer 204, therefore when removing the dielectric layer 210 of part, can under the situation of not damaging cover curtain layer 204, slit 212 be opened.
Then, see also shown in Fig. 2 C, remove the dielectric layer 210 of opening 214 sidewalls, with the width of enlarged openings 214.Wherein, the method that removes for example is non-isotropic etch process, and this anisotropic etching processing procedure for example is a wet etch process, and the employed etching solution of this wet etch process for example is a hydrofluoric acid solution.In addition, opening 214 being expanded into opening 214a, mainly is to make the depth-width ratio of opening 214 reduce.
Continue it, on dielectric layer 210, form another layer dielectric layer 216, to fill up opening 214a.Wherein, the material of dielectric layer 216 for example is a silica, and the formation method for example is a chemical vapour deposition technique, and its reacting gas for example is the silicon tetraethyl acid esters.What deserves to be mentioned is that because the depth-width ratio of opening 214a is less, so dielectric material (dielectric layer 216) can fill up opening 214a fully.
Afterwards, see also shown in Fig. 2 D, remove irrigation canals and ditches 206 dielectric layer (210 and 216) in addition, and only stay the insulating barrier 210a that fills up irrigation canals and ditches 206.Wherein, the method that removes for example is a chemical mechanical milling method.
Continue it, pad oxide in the substrate 200 202 and cover curtain layer 204 are removed, to finish the processing procedure of shallow slot isolation structure.
Because the present invention after forming dielectric layer 210, will be present in slit 212 in the dielectric layer 210 earlier and open and become opening 214, enlarge afterwards and with the width of opening 214.Therefore, when follow-up another layer of formation dielectric layer 216, opening 214a can be filled up fully, and form seamless shallow slot isolation structure.
Below in order to prove method of the present invention, be illustrated especially exemplified by going out a better embodiment.
At first utilize the high density plasma enhanced chemical vapor deposition method (for example: the protuberance 102 shown in Figure 1A) go up deposition one deck silicon oxide dielectric layer in protuberance.Wherein, the reacting gas of this deposition manufacture process for example is silicomethane and oxygen, and the flow velocity of silicomethane for example is between 80 to 100sccm, and the flow velocity of oxygen for example is between 140 to 160sccm.In addition, the inert gas of deposition manufacture process for example is an argon gas, and the flow velocity of argon gas for example is between 20 to 40sccm.In addition, in this high density plasma enhanced chemical vapor deposition processing procedure, being used for controlling the electric bias value of starching direction for example is between 4200 to 4500 watts.What deserves to be mentioned is that (for example: the slit 108 shown in Figure 1A), its position can be higher than the top of protuberance to utilize the formed slit of above-mentioned process parameter.
Then, carry out chemical mechanical milling method, so that open in the slit.Because above-mentioned formed slit is higher than the top of protuberance, therefore when carrying out cmp, can under the situation of not damaging protuberance, the slit be opened.
Then, utilize hydrofluoric acid solution to carry out the anisotropic etching processing procedure,, and then reduce the depth-width ratio of gap opening so that the A/F in these slits becomes big.
Continue it, carry out chemical vapour deposition technique, on dielectric layer, forming another layer silicon oxide dielectric layer, and fill up the opening in these slits.Wherein, the reacting gas of electric pulp vapour deposition process for example is the silicon tetraethyl acid esters.Because the depth-width ratio of gap opening is less, therefore formed silicon oxide dielectric layer can fill up opening, and makes the gap between the protuberance fill up dielectric material fully, and seamless existence.
In sum, when utilizing method of the present invention can avoid the existing gap of prior art method between protuberance to insert dielectric material, can in dielectric materials layer, produce the problem in slit.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to the technology of the present invention essence to any simple modification that above embodiment did, equivalent variations and modification all still belong in the technical solution of the present invention scope.
Claims (20)
1, a kind of method of filling the gap is characterized in that it may further comprise the steps:
One substrate is provided, and has been formed with several protuberances in this substrate, and have a gap between each those protuberance;
In this substrate, form one first dielectric layer, inserting this gap between those protuberances, and cover those protuberances, have several slits in wherein formed this first dielectric layer, and the position in those slits is the tops that are higher than those protuberances;
Carry out a chemical mechanical milling method, remove this first dielectric layer of part,, and form several openings so that those slits open;
Carry out an anisotropic etching processing procedure, to enlarge the width of those openings; And
On this first dielectric layer, form one second dielectric layer, to fill up those openings.
2, the method in filling according to claim 1 gap is characterized in that the formation method of wherein said first dielectric layer comprises a high density plasma enhanced chemical vapor deposition method.
3, the method in filling according to claim 1 gap is characterized in that wherein said those protuberances comprise several gate structures.
4, the method in filling according to claim 1 gap is characterized in that wherein said those protuberances comprise several conductor structures.
5, the method in filling according to claim 1 gap it is characterized in that wherein said anisotropic etching processing procedure comprises a wet etch process, and the employed etching solution of this wet etch process comprises a hydrofluoric acid solution.
6, the method in filling according to claim 1 gap is characterized in that wherein after the step of this substrate was provided, with before forming the step of this first dielectric layer in this substrate, the surface that more is included in those protuberances and this substrate formed a lining.
7, a kind of manufacture method of shallow slot isolation structure is characterized in that it may further comprise the steps:
Provide a substrate, and this substrate has been formed with a pad oxide and a cover curtain layer of patterning, and several irrigation canals and ditches;
On this cover curtain layer, form one first dielectric layer,, have several slits in wherein formed this first dielectric layer, and the top in those slits is the surfaces that are higher than this cover curtain layer to insert in those irrigation canals and ditches;
Remove this first dielectric layer of part,, and form several openings so that those slits open;
Remove this first dielectric layer of those opening sidewalls, to enlarge the width of those openings;
On this first dielectric layer, form one second dielectric layer, to fill up those openings; And
Remove those irrigation canals and ditches this first dielectric layer and this second dielectric layer in addition.
8, the manufacture method of shallow slot isolation structure according to claim 7 is characterized in that the formation method of wherein said first dielectric layer comprises a high density plasma enhanced chemical vapor deposition method.
9, the manufacture method of shallow slot isolation structure according to claim 7 is characterized in that the wherein said method that removes this first dielectric layer of part comprises a chemical mechanical milling method.
10, the manufacture method of shallow slot isolation structure according to claim 7 is characterized in that the wherein said method that removes this first dielectric layer of those opening sidewalls comprises an anisotropic etching processing procedure.
11, the manufacture method of shallow slot isolation structure according to claim 10 it is characterized in that wherein said anisotropic etching processing procedure comprises a wet etch process, and the employed etching solution of this wet etch process comprises a hydrofluoric acid solution.
12, the manufacture method of shallow slot isolation structure according to claim 7, it is characterized in that wherein after the step of this substrate is provided, with before the step that forms this first dielectric layer on this cover curtain layer, more be included on the surface of those irrigation canals and ditches and form a lining.
13, the manufacture method of shallow slot isolation structure according to claim 7 is characterized in that wherein more comprising removing this cover curtain layer and this pad oxide after the step of this first dielectric layer beyond removing those irrigation canals and ditches and this two dielectric layer.
14, a kind of method of filling the gap is characterized in that it may further comprise the steps:
One substrate is provided, and has been formed with at least one first opening in this substrate;
Form one first dielectric layer in this substrate, inserting in this first opening, and cover this substrate, have at least one slit in this first dielectric layer, this slit is the surface that is positioned at this opening top and is higher than this substrate;
Remove this first dielectric layer of part,, and form one second opening so that this slit opens;
Remove this first dielectric layer of this second opening sidewalls, to enlarge the width of this second opening; And
On this first dielectric layer, form one second dielectric layer, to fill up this second opening.
15, the method in filling according to claim 14 gap is characterized in that the formation method of wherein said first dielectric layer comprises a high density plasma enhanced chemical vapor deposition method.
16, the method in filling according to claim 14 gap is characterized in that the wherein said method that removes this first dielectric layer of part comprises a chemical mechanical milling method.
17, the method in filling according to claim 14 gap is characterized in that the wherein said method that removes this first dielectric layer of this second opening sidewalls comprises an anisotropic etching processing procedure.
18, the method in filling according to claim 17 gap it is characterized in that wherein said anisotropic etching processing procedure comprises a wet etch process, and the employed etching solution of this wet etch process comprises a hydrofluoric acid solution.
19, the method in filling according to claim 14 gap is characterized in that wherein said first opening comprises the gap between several protuberances, and those protuberances comprise several conductor structures and several gate structures one of them.
20, the method in filling according to claim 14 gap is characterized in that the irrigation canals and ditches of the shallow slot isolation structure that wherein said first opening forms for institute's desire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101034420A CN1310294C (en) | 2003-11-03 | 2003-11-03 | Method for filling gap and producing method for shallow kennel separated structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101034420A CN1310294C (en) | 2003-11-03 | 2003-11-03 | Method for filling gap and producing method for shallow kennel separated structure |
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| Publication Number | Publication Date |
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| CN1614752A CN1614752A (en) | 2005-05-11 |
| CN1310294C true CN1310294C (en) | 2007-04-11 |
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| CNB2003101034420A Expired - Lifetime CN1310294C (en) | 2003-11-03 | 2003-11-03 | Method for filling gap and producing method for shallow kennel separated structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104425385B (en) * | 2013-08-20 | 2018-04-24 | 华邦电子股份有限公司 | The manufacture method of embedded memory element |
| CN104733389B (en) * | 2013-12-20 | 2018-11-16 | 中芯国际集成电路制造(上海)有限公司 | The forming method of transistor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758104A (en) * | 1993-06-30 | 1995-03-03 | Kawasaki Steel Corp | Manufacture of semiconductor device |
| US5902127A (en) * | 1996-06-17 | 1999-05-11 | Samsung Electronics Co., Ltd. | Methods for forming isolation trenches including doped silicon oxide |
| US6110843A (en) * | 1999-02-08 | 2000-08-29 | Taiwan Semiconductor Manufacturing Co. | Etch back method for smoothing microbubble-generated defects in spin-on-glass interlayer dielectric |
| JP2001176866A (en) * | 1999-10-28 | 2001-06-29 | Texas Instr Inc <Ti> | Manufacturing method of integrated circuit device |
| CN1377062A (en) * | 2001-03-27 | 2002-10-30 | 华邦电子股份有限公司 | Process for preparing dielectric layer between metal layers |
-
2003
- 2003-11-03 CN CNB2003101034420A patent/CN1310294C/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758104A (en) * | 1993-06-30 | 1995-03-03 | Kawasaki Steel Corp | Manufacture of semiconductor device |
| US5902127A (en) * | 1996-06-17 | 1999-05-11 | Samsung Electronics Co., Ltd. | Methods for forming isolation trenches including doped silicon oxide |
| US6110843A (en) * | 1999-02-08 | 2000-08-29 | Taiwan Semiconductor Manufacturing Co. | Etch back method for smoothing microbubble-generated defects in spin-on-glass interlayer dielectric |
| JP2001176866A (en) * | 1999-10-28 | 2001-06-29 | Texas Instr Inc <Ti> | Manufacturing method of integrated circuit device |
| CN1377062A (en) * | 2001-03-27 | 2002-10-30 | 华邦电子股份有限公司 | Process for preparing dielectric layer between metal layers |
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| CN1614752A (en) | 2005-05-11 |
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