CN1308758C - Thin film transistor panel manufacturing method, etching bath cleaning method and use of alkali - Google Patents
Thin film transistor panel manufacturing method, etching bath cleaning method and use of alkali Download PDFInfo
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- CN1308758C CN1308758C CNB031471153A CN03147115A CN1308758C CN 1308758 C CN1308758 C CN 1308758C CN B031471153 A CNB031471153 A CN B031471153A CN 03147115 A CN03147115 A CN 03147115A CN 1308758 C CN1308758 C CN 1308758C
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Abstract
The present invention discloses a thin film transistor panel manufacturing method, an etching groove cleaning method and a strong alkali application. The method comprises: a semiconductor structure to be etched is soaked in an etching bath (namely an oxalic acid solution) for some time, and is taken out; the semiconductor structure to be etched is provided with at least one tin indium oxide (ITO) layer and a patterned photoresist layer which is positioned on the ITO layer; the oxalic acid solution is used for removing the exposed parts of the ITO layer so as to form a plurality of ITO electrodes; the oxalic acid solution is discharged from the etching bath, a strong alkali solution is used for cleaning the etching bath, and residues in the etching bath are removed. The present invention can prevent sensing elements in the etching bath from starting wrong warning bells because of mistake touch of the residues, and can prevent the interrupted phenomenon of a TFT panel technique to enhance the yield of a TFT panel.
Description
Technical field
Relevant a kind of thin film transistor (TFT) (the thin film transistor of the present invention, TFT) manufacture method of panel, and particularly relevant a kind of use strong base solution clean oxidation indium tin (indium tin oxide, ITO) manufacture method of the thin-film transistor display panel of the step of etching bath that comprise.
Background technology
(liquid crystal display is LCD) because of having the compact advantage of low radiation and volume, so day by day extensive on using for LCD.And thin film transistor (TFT) (thin film transistor, TFT) LCD is because its high brightness and with great visual angle characteristic are very popular especially on the high-order electronic product.
Traditional TFT LCD is made of TFT panel and colored filter (color filter) panel, the CF panel comprises public electrode (common electrode), black matrix" (black matrix) and colored filter at least, and the TFT panel comprises substrate (substrate), multi-strip scanning line (scanlines), many data lines (data lines), a plurality of storage capacitors (storage capacitors) at least, a plurality of TFT and a plurality of pixel electrode (pixel electrodes).The a little therewith data lines of these a little sweep traces define a plurality of pixels, and each pixel has a pixel region, and have a TFT in each pixel region.In addition, and the normally transparent tin indium oxide of the material of pixel electrode (indium tin oxide, ITO), so pixel electrode also can be called as the ITO electrode.TFT LCD must strut TFT panel and CF panel by a plurality of septs (spacer), to adjust the thickness of the liquid crystal layer among the TFT LCD.
Please refer to Figure 1A～1D, shown in it is the flow process sectional view of the manufacture method of traditional TFT panel.At first, in Figure 1A, provide a substrate 102, and form several TFT 104, several sweep traces and several data lines on substrate 102.Is that example explains at this with single pixel, and TFT 104 is formed on the substrate 102, and has drain electrode (drain) 104a.Then, form a protective seam (passivationlayer) 106 on substrate 102, protective seam 106 covers TFT 104, then, forms an organic layer (organic layer) 108 on protective seam 106, shown in Figure 1B.In Figure 1B, protective seam 106 and organic layer 108 have the contact hole (contact hole) 110 of perforation, and contact hole 110 is in order to the drain electrode 104a of expose portion.Then, form an ITO layer 112 on organic layer 108 and on the drain electrode 104a in the contact hole 110, shown in Fig. 1 C.In Fig. 1 C, form a patterning photoresist layer 114 again on ITO layer 112, treat that etching semiconductor structures 120 finishes at this.Then, remove the ITO layer 112 of institute's exposed portions earlier with wet etch method (wet etching), to form ITO electrode 112a, ITO electrode 112a is electrically connected with drain electrode 104a by contact hole 110.Remove patterning photoresist layer 114 with the photoresist release agent again, shown in Fig. 1 D, TFT panel 100 is accused eventually and is finished.
Please refer to Fig. 2, it illustrates the process flow diagram of the clean method of traditional wet etch method and etching bath.In Fig. 2, at first, in step 202, soak and to treat in the ITO etching solution of etching semiconductor structures 120 in ITO etching bath (etcher) in after a period of time and taking-up, treat that etching semiconductor structures 120 has ITO layer 112 at least and is positioned at patterning photoresist layer 114 on the ITO layer 112.For example, the ITO etching solution can be the oxalic acid solution (ITO06SD) that her Merck ﹠ Co., Inc. of Taiwan is produced, and oxalic acid solution (ITO06SD) comprises oxalic acid (oxalic acid) and surfactant (surfactant), and the PEP5 photoresist (AZ TFP-650F5) for example produced for Japanese Clariant (Clariant) of patterning photoresist layer 114.When treating that etching semiconductor structures 120 soaked in the oxalic acid solutions (ITO06SD) after a period of time, oxalic acid solution (ITO06SD) can be removed the ITO layer 112 of institute's exposed portions, with formation ITO electrode 112a, but red residue (residue) will appear in the ITO etching bath.Then, enter in the step 204, discharge the ITO etching solution in the ITO etching bath, at this moment, still have red residue in the etching bath.Then, enter in the step 206, the operating personnel must use the red residue in the non-dust cloth wiping ITO etching bath, with cleaning ITO etching bath.
It should be noted that the operating personnel must carefully use the red residue in the non-dust cloth wiping ITO etching bath, to avoid the damage of or exert oneself when excessive cause sensing element ITO etching bath in improper in wiping.Therefore, the operating personnel can't remove the red residue in the ITO etching bath totally fully, cause not being eliminated clean red residue and will accumulate in the ITO etching bath.When a large amount of when treating that etching semiconductor structures 120 is dipped in the ITO etching solution in the ITO etching bath, the content of the red residue in the ITO etching bath that accumulates on will get more and more, make the sensing element in the ITO etching bath be very easy to the red residue false touch of being accumulated and start wrong alarm bell (false alarm), it is very huge to influence TFT panel productive rate.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of thin film transistor (TFT) (thin filmtransistor exactly, TFT) manufacture method of panel, it is with the design of strong base solution clean etch groove, can remove the residue in the etching bath effectively, avoid the sensing element in the etching bath to be started wrong alarm bell by the residue false touch.And can prevent that TFT panel technology from the phenomenon of interrupting taking place, to improve the productive rate of TFT panel.
According to purpose of the present invention, provide a kind of manufacture method of thin-film transistor display panel.At first, soaking one treats also to take out after a period of time in the oxalic acid solution of etching semiconductor structures in an etching bath, treat that etching semiconductor structures has a tin indium oxide (indium tin oxide at least, ITO) layer and a patterning photoresist layer that is positioned on the ITO layer, oxalic acid solution is in order to remove the ITO layer of institute's exposed portions, to form several ITO electrodes.Then, discharge the oxalic acid solution in the etching bath, and use a strong base solution to clean etching bath, to remove the residue in the etching bath, wherein the weight percent concentration of this strong base solution is 3wt%～10wt%.
According to a further object of the present invention, a kind of clean method of etching bath is proposed, be used for an etching bath, etching bath can be inserted an oxalic acid solution, and oxalic acid solution can have the etching semiconductor structures for the treatment of that an ITO layer and is positioned at patterning photoresist layer on the ITO layer for one and immerse.Oxalic acid solution is with the ITO layer of etching institute exposed portions, and to form several ITO electrodes, etching bath is cleaned after etching semiconductor and oxalic acid solution are removed in treating after the etching.In the method, at first, use a strong base solution to clean etching bath, to remove the residue in the etching bath, wherein the weight percent concentration of this strong base solution is 3wt%～10wt%.Then, use a washed with de-ionized water etching bath.
According to another object of the present invention, a kind of purposes of strong base solution is proposed, it is in order to clean an etching bath, etching bath can be inserted an oxalic acid solution, this oxalic acid solution can have the etching semiconductor structures for the treatment of that an ITO layer and is positioned at patterning photoresist layer on the ITO layer for one and immerse, oxalic acid solution is with the ITO layer of etching institute exposed portions, to form several ITO electrodes, etching bath is cleaned after etching semiconductor and oxalic acid solution are removed in treating after the etching, and wherein the weight percent concentration of this strong base solution is 3wt%～10wt%.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Figure 1A～1D illustrates the flow process sectional view of the manufacture method of traditional thin film transistor (TFT) (TFT) panel;
Fig. 2 illustrates the process flow diagram of the clean method of traditional wet etch method and etching bath;
Fig. 3 illustrates the process flow diagram according to the manufacture method of the thin-film transistor display panel of the preferred embodiments of the present invention;
Fig. 4 illustrates the fourier transform infrared spectrometry (FTIR) of red residue in the etching bath and analyzes experimental result;
Fig. 5 illustrates the FTIR that photoresist is soaked in the oxalic acid solution and analyzes experimental result;
The FTIR analysis result that Fig. 6 illustrates on-the-spot ITO groove (tank) extract and mixes with photoresist;
Fig. 7 illustrates the middle extract analysis of components FTIR analysis result of oxalic acid solution (ITO06SD and ITO05N) relatively.
Description of reference numerals in the accompanying drawing is as follows:
100: thin film transistor (TFT) (TFT) panel
102: substrate 104: thin film transistor (TFT)
106: protective seam 108: organic layer
110: contact hole 112: tin indium oxide (ITO) layer
112a: indium-tin oxide electrode
114: patterning photoresist layer
120: treat etching semiconductor structures
Embodiment
Please refer to Fig. 3, it illustrates thin film transistor (TFT) (thin filmtransistor, TFT) process flow diagram of the manufacture method of panel according to the preferred embodiments of the present invention.In Fig. 3, at first, in step 302, provide a substrate.Then, enter in the step 304, form several TFT on substrate, and each TFT has a drain electrode.Then, enter in the step 306, form a protective seam on substrate, protective seam covers this a little TFT.Then, enter in the step 308, form an organic layer on protective seam, organic layer and protective seam have several contact holes of perforation, and each contact hole is in order to the drain electrode of the part that exposes each TFT.Then, enter in the step 310, (indium tin oxide is ITO) in the drain electrode of layer in organic layer and each contact hole to form a tin indium oxide.Then, enter in the step 312, form a patterning photoresist layer on the ITO layer, and one treats that etching semiconductor structures finishes at this.For example, patterning photoresist layer can be the PEP5 photoresist (AZ TFP-650F5) that Japanese Clariant (Clariant) is produced.
Then, enter in the step 314, soak one and treat also to take out after a period of time in the oxalic acid solution of etching semiconductor structures in an etching bath.For example, oxalic acid solution can be the oxalic acid solution (ITO06SD) that her Merck ﹠ Co., Inc. of Taiwan is produced, and oxalic acid solution (ITO06SD) comprises oxalic acid (oxalic acid) and surfactant (surfactant).For example, oxalic acid solution (ITO06SD) is in order to removing the ITO layer of institute's exposed portions, forming several ITO electrodes, and red residue will occur in the etching bath.In addition, when treating the etched back of etching semiconductor structures and taking out, can remove patterning photoresist layer, to form a TFT panel.Then, enter in the step 316, discharge the oxalic acid solution in the etching bath, and use a strong base solution to clean etching bath, to remove and to dissolve red residue.Then, enter in the step 318, use a washed with de-ionized water etching bath, to reach the purpose of clean etching bath.Wherein, step 316 and step 318 can be considered as the clean method of etching bath.
Why choose strong base solution as for the present invention and remove red residue in the etching bath, it is described as follows according to reason:
(1) analysis of red residue experiment: the present invention utilizes fourier transform infrared spectroscopy (fourier transform infrared, FTIR) analyze red residue, it found that red residue comprises seven kinds of different mixtures at least, as shown in Figure 4.
(2) photoresist is soaked in the experiment in the oxalic acid solution: show that by the FTIR analysis result red residue contains the photoresist composition, as shown in Figure 5, infer patterning photoresist layer when oxalic acid solution etching ITO layer by micro-stripping.
(3) the extract analysis of the oxalic acid solution behind the ITO of the etching layer in etching bath experiment: show by the FTIR analysis result, the extract composition of oxalic acid solution is similar to red residue, as shown in Figure 6, infer that red residue is reacted and formed by oxalic acid solution and photoresist.Wherein, oxalic acid solution (ITO05N) is the control experiment group.
(4) analysis of components of the surfactant in oxalic acid solution experiment: show by the FTIR analysis result, find that the surfactant in the oxalic acid solution is similar to red residue composition, as shown in Figure 7.
(5) oxalic acid solution of variable concentrations is for the dissolution experiment of photoresist: along with the concentration of oxalic acid solution increases, the dissolution rate of photoresist also increases thereupon.
(6) photoresist is dissolved in the contrast experiment of deionized water, oxalic acid solution (comprising oxalic acid and surfactant) and pure oxalic acid: the dissolution degree to photoresist is pure oxalic acid＞oxalic acid solution (comprising oxalic acid and surfactant)＞deionized water in proper order.So, cause the reason of oxalic acid solution stripping photoresist to be mainly oxalic acid in the oxalic acid solution, be not to be the surfactant in the oxalic acid solution.
The present invention is with acetone (acetone), normal butyl alcohol (n-butyl alcohol, NBA), propylene glycol monomethyl ether acetate (propylene glycol monomethyl ether acetate, PGMEA), photoresist release agent (stripper), alcohol, isopropyl alcohol (isopropyl alcohol, IPA), the experiment of dissolving red residue of salpeter solution, surfactant and deionized water, its experimental result is as shown in the table:
| The solvent title | Red residue dissolution degree |
| Acetone | Dissolving fully |
| NBA | Dissolving fully |
| PGMEA | Dissolving fully |
| The photoresist release agent | Dissolving fully |
| Alcohol | Slightly soluble |
| IPA | Slightly soluble |
| Nitric acid | Indissoluble |
| Surfactant | Indissoluble |
| Deionized water | Indissoluble |
Can find that by last table red residue can be dissolved in acetone, NBA, PGMEA and the photoresist release agent fully, and red residue is slightly soluble among alcohol and the IPA, but red residue is insoluble in nitric acid, surfactant and the deionized water.So red residue can only be dissolved in the organic solvent.Because etching bath is made of organic material, so the present invention determines to choose another kind of inorganic solvent, i.e. strong base solution for fear of being damaged to etching bath.
Dissolve in the experiment of red residue at strong base solution, the present invention is that example explains with the sodium hydroxide solution, and its experimental procedure is as follows:
(1) sodium hydroxide solution of preparation Different Weight percent concentration (wt%) is as the sodium hydroxide solution of 3wt%, 6wt% and 10wt%.
(2) the red residue in the taking-up etching bath, packing is weighed and is noted down.
(3) sodium hydroxide solution of 3wt%, 6wt% and 10wt% is respectively got 50 milliliters and the reaction of red residue.
(4) temperature maintenance stirred 10 minutes in 30 ℃.
(5) filter and claim the net weight of remaining red residue.
(6) dissolution rate of the red residue of calculating, its result is as shown in the table:
| Sodium hydroxide solution (wt%) | Red residue original weight before the dissolving (g) | Red residue net weight after the dissolving (g) | Dissolution rate (%) | Dissolution degree (visual method) |
| 3 | 0.0018 | 0.0008 | 55.6 | Have residual |
| 6 | 0.0023 | 0.0000 | 100 | Dissolving fully |
| 10 | 0.0018 | 0.0001 | 94.4 | Dissolving fully |
As seen from the above table, red residue can be dissolved in the sodium hydroxide solution of 3wt%～10wt% fully.That is to say that red residue can be dissolved in the strong base solution of 3wt%～10wt% fully, the present invention that Here it is chooses the foundation of strong base solution.
The manufacture method of the disclosed thin-film transistor display panel of the above embodiment of the present invention, it is with the design of strong base solution cleaning ITO etching bath, can remove the residue in the ITO etching bath effectively, avoid the sensing element in the etching bath to be started wrong alarm bell by the residue false touch.And prevent that TFT panel technology from the phenomenon of interrupting taking place, to improve the productive rate of TFT panel.
In sum; though the present invention with preferred embodiment openly as above; but it is not in order to limit the present invention; those skilled in the art; under the situation that does not break away from the spirit and scope of the present invention; can be used for a variety of modifications and variations, so protection scope of the present invention is when with appended being as the criterion that claim was defined.
Claims (10)
1. the manufacture method of a thin-film transistor display panel comprises at least:
Soaking one treats also to take out after a period of time in the oxalic acid solution of etching semiconductor structures in an etching bath, wherein this treats that etching semiconductor structures has an indium tin oxide layer and at least and is positioned at patterning photoresist layer on this indium tin oxide layer, this oxalic acid solution is in order to remove this indium tin oxide layer of part, to form a plurality of indium-tin oxide electrodes; And
Discharge the oxalic acid solution in this etching bath, and use a strong base solution to clean this etching bath, to remove the residue in this etching bath, wherein the weight percent concentration of this strong base solution is 3wt%～10wt%.
2. the method for claim 1, wherein this strong base solution is a sodium hydroxide solution.
3. the method for claim 1, the oxalic acid solution of this method in this discharges this etching bath wherein, and use a strong base solution to clean this etching bath, also to comprise after the step of removing the residue in this etching bath:
Use this etching bath of a washed with de-ionized water.
4. the method for claim 1, wherein this method also comprises before step in the oxalic acid solution of etching semiconductor structures in an etching bath is treated in this immersion one:
One substrate is provided;
Form a plurality of thin film transistor (TFT)s on this substrate, and respectively this thin film transistor (TFT) has a drain electrode;
Form a protective seam on this substrate, and cover those thin film transistor (TFT)s;
Form an organic layer on this protective seam, this organic layer and this protective seam have a plurality of contact holes of perforation, and respectively this contact hole is in order to expose the respectively drain electrode of the part of this thin film transistor (TFT);
Form indium tin oxide layer in this organic layer and respectively in the drain electrode in this contact hole; And
Form a patterning photoresist layer on this indium tin oxide layer.
5. the clean method of an etching bath, be used for an etching bath, this etching bath can be inserted an oxalic acid solution, but the etching semiconductor structures for the treatment of that this oxalic acid solution sacrificial vessel has indium tin oxide layer and is positioned at patterning photoresist layer on this indium tin oxide layer immerses, this oxalic acid solution is with the indium tin oxide layer of etching institute exposed portions, to form a plurality of indium-tin oxide electrodes, this etching bath is cleaned after etching semiconductor and this oxalic acid solution are removed in treating after the etching, and this clean method comprises:
Use a strong base solution to clean this etching bath, to remove the residue in this etching bath, wherein the weight percent concentration of this strong base solution is 3wt%～10wt%; And
Use this etching bath of a washed with de-ionized water.
6. method as claimed in claim 5, wherein this strong base solution is a sodium hydroxide solution.
7. method as claimed in claim 5, wherein this treats that etching semiconductor structures also comprises:
One substrate;
A plurality of thin film transistor (TFT)s, it is formed on this substrate, and respectively this thin film transistor (TFT) has a drain electrode;
One protective seam is formed on this substrate, and covers those thin film transistor (TFT)s;
One organic layer; be formed on this protective seam, this organic layer and this protective seam have a plurality of contact holes of perforation, and respectively this contact hole is in order to expose the respectively drain electrode of the part of this thin film transistor (TFT); wherein, have this indium tin oxide layer and this patterning photoresist layer on this organic layer.
8. the purposes of a strong base solution, it is in order to clean an etching bath, this etching bath can be inserted an oxalic acid solution, but the etching semiconductor structures for the treatment of that this oxalic acid solution sacrificial vessel has indium tin oxide layer and is positioned at patterning photoresist layer on this indium tin oxide layer immerses, this oxalic acid solution is with the indium tin oxide layer of etching institute exposed portions, to form a plurality of indium-tin oxide electrodes, this etching bath is cleaned after etching semiconductor and this oxalic acid solution are removed in treating after the etching, and wherein the weight percent concentration of this strong base solution is 3wt%～10wt%.
9. the purposes of highly basic as claimed in claim 8, wherein this strong base solution is a sodium hydroxide solution.
10. the purposes of highly basic as claimed in claim 8, wherein this treats that etching semiconductor structures also comprises:
One substrate;
A plurality of thin film transistor (TFT)s are formed on this substrate, and respectively this thin film transistor (TFT) has a drain electrode;
One protective seam is formed on this substrate, and covers those thin film transistor (TFT)s; And
One organic layer; be formed on this protective seam; this organic layer and this protective seam have a plurality of contact holes of perforation, and respectively this contact hole wherein has this indium tin oxide layer and this patterning photoresist layer in order to expose the respectively drain electrode of the part of this thin film transistor (TFT) on this organic layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031471153A CN1308758C (en) | 2003-07-01 | 2003-07-01 | Thin film transistor panel manufacturing method, etching bath cleaning method and use of alkali |
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| CNB031471153A CN1308758C (en) | 2003-07-01 | 2003-07-01 | Thin film transistor panel manufacturing method, etching bath cleaning method and use of alkali |
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| CN1308758C true CN1308758C (en) | 2007-04-04 |
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| CN105448822B (en) * | 2015-12-15 | 2018-05-25 | 江西沃格光电股份有限公司 | The method for removing substrate surface ITO |
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|---|---|---|---|---|
| US4356374A (en) * | 1977-03-08 | 1982-10-26 | Matsushita Electric Industrial Co., Ltd. | Electronics circuit device and method of making the same |
| CN85108070A (en) * | 1984-11-08 | 1986-08-20 | 帕克化学公司 | Aqueous alkaline cleaning process |
| US5954891A (en) * | 1997-01-09 | 1999-09-21 | Kao Corporation | Detergent composition for removing resinous stains |
| US5962385A (en) * | 1997-08-18 | 1999-10-05 | Mitsubishi Gas Chemical Company, Inc. | Cleaning liquid for semiconductor devices |
| US5985811A (en) * | 1996-01-17 | 1999-11-16 | Tadhiro Ohmi | Cleaning solution and cleaning method |
| US6394106B1 (en) * | 1999-09-24 | 2002-05-28 | Michael Jolley | Cleaning solutions and methods for semiconductor wafers |
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2003
- 2003-07-01 CN CNB031471153A patent/CN1308758C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356374A (en) * | 1977-03-08 | 1982-10-26 | Matsushita Electric Industrial Co., Ltd. | Electronics circuit device and method of making the same |
| CN85108070A (en) * | 1984-11-08 | 1986-08-20 | 帕克化学公司 | Aqueous alkaline cleaning process |
| US5985811A (en) * | 1996-01-17 | 1999-11-16 | Tadhiro Ohmi | Cleaning solution and cleaning method |
| US5954891A (en) * | 1997-01-09 | 1999-09-21 | Kao Corporation | Detergent composition for removing resinous stains |
| US5962385A (en) * | 1997-08-18 | 1999-10-05 | Mitsubishi Gas Chemical Company, Inc. | Cleaning liquid for semiconductor devices |
| US6394106B1 (en) * | 1999-09-24 | 2002-05-28 | Michael Jolley | Cleaning solutions and methods for semiconductor wafers |
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