CN1305218C - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN1305218C CN1305218C CNB2004100369544A CN200410036954A CN1305218C CN 1305218 C CN1305218 C CN 1305218C CN B2004100369544 A CNB2004100369544 A CN B2004100369544A CN 200410036954 A CN200410036954 A CN 200410036954A CN 1305218 C CN1305218 C CN 1305218C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- transistor
- circuit
- state
- control signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 230000005540 biological transmission Effects 0.000 claims description 55
- 230000009466 transformation Effects 0.000 claims description 29
- 230000001052 transient effect Effects 0.000 claims description 10
- 230000007704 transition Effects 0.000 abstract description 4
- 101150071403 INP1 gene Proteins 0.000 description 61
- 230000015572 biosynthetic process Effects 0.000 description 53
- 238000005755 formation reaction Methods 0.000 description 53
- 230000009471 action Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000000630 rising effect Effects 0.000 description 6
- 230000002411 adverse Effects 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 4
- 230000003111 delayed effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000007600 charging Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09425—Multistate logic
- H03K19/09429—Multistate logic one of the states being the high impedance or floating state
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP121480/2003 | 2003-04-25 | ||
JP2003121480A JP3759121B2 (ja) | 2003-04-25 | 2003-04-25 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1540864A CN1540864A (zh) | 2004-10-27 |
CN1305218C true CN1305218C (zh) | 2007-03-14 |
Family
ID=32959690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100369544A Expired - Fee Related CN1305218C (zh) | 2003-04-25 | 2004-04-23 | 半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7049847B2 (zh) |
EP (1) | EP1471642A1 (zh) |
JP (1) | JP3759121B2 (zh) |
CN (1) | CN1305218C (zh) |
TW (1) | TW200507454A (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060166415A1 (en) * | 2004-06-07 | 2006-07-27 | Sharp Laboratories Of America, Inc. | Two-transistor tri-state inverter |
US7782090B2 (en) * | 2004-08-02 | 2010-08-24 | Panasonic Corporation | Semiconductor device |
JP2006279273A (ja) * | 2005-03-28 | 2006-10-12 | Oki Electric Ind Co Ltd | インタフェース回路 |
JP2006311201A (ja) * | 2005-04-28 | 2006-11-09 | Nec Electronics Corp | バッファ回路 |
KR100735614B1 (ko) * | 2006-01-13 | 2007-07-04 | 삼성전자주식회사 | 전압 공급 장치 및 그 동작 방법 |
JP2007208483A (ja) * | 2006-01-31 | 2007-08-16 | Fujitsu Ltd | 出力回路 |
CN101641865B (zh) * | 2007-03-28 | 2012-08-08 | 新思科技有限公司 | 具有耐高电压单元的电子器件 |
JP2008271389A (ja) * | 2007-04-24 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 出力回路及び多出力回路 |
US7375555B1 (en) * | 2007-05-15 | 2008-05-20 | Microchip Technology Incorporated | Five volt tolerant integrated circuit signal pad with three volt assist |
EP2255440A1 (en) * | 2008-03-16 | 2010-12-01 | Nxp B.V. | Methods, circuits, systems and arrangements for undriven or driven pins |
JP4981159B2 (ja) * | 2010-07-13 | 2012-07-18 | ラピスセミコンダクタ株式会社 | 入出力回路 |
CN103166605B (zh) * | 2013-01-25 | 2016-04-06 | 江苏芯力特电子科技有限公司 | 一种多相非交叠时钟电路 |
US9698795B1 (en) * | 2013-07-03 | 2017-07-04 | Altera Corporation | Supporting pseudo open drain input/output standards in a programmable logic device |
CN103684413B (zh) * | 2013-12-08 | 2017-07-14 | 杭州国芯科技股份有限公司 | 一种带反馈的io电路 |
US11599185B2 (en) * | 2015-07-22 | 2023-03-07 | Synopsys, Inc. | Internet of things (IoT) power and performance management technique and circuit methodology |
JP7001442B2 (ja) | 2017-11-28 | 2022-01-19 | ラピスセミコンダクタ株式会社 | 入出力回路 |
CN111835331B (zh) * | 2019-04-16 | 2024-02-09 | 中芯国际集成电路制造(上海)有限公司 | 参考电压驱动器 |
US11677399B1 (en) | 2022-01-04 | 2023-06-13 | Nanya Technology Corporation | Interface circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1111420A (zh) * | 1994-02-16 | 1995-11-08 | 株式会社东芝 | 输出电路 |
JPH09238065A (ja) * | 1996-03-01 | 1997-09-09 | Hitachi Ltd | 半導体集積回路装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5118974A (en) | 1990-07-19 | 1992-06-02 | National Semiconductor Corporation | Tristate circuits with fast and slow OE signals |
JPH0738410A (ja) | 1993-07-21 | 1995-02-07 | Oki Electric Ind Co Ltd | 出力バッファ回路 |
JPH0766710A (ja) | 1993-08-26 | 1995-03-10 | Hitachi Ltd | 入出力バッファ回路 |
JP3190233B2 (ja) | 1995-08-22 | 2001-07-23 | 株式会社東芝 | 出力バッファ回路 |
KR100242987B1 (ko) | 1996-11-27 | 2000-02-01 | 김영환 | 5v 톨러런트 입출력 회로 |
US5933025A (en) | 1997-01-15 | 1999-08-03 | Xilinx, Inc. | Low voltage interface circuit with a high voltage tolerance |
JP3544819B2 (ja) | 1997-03-31 | 2004-07-21 | 株式会社 沖マイクロデザイン | 入力回路および出力回路ならびに入出力回路 |
JPH11317652A (ja) | 1998-02-13 | 1999-11-16 | Matsushita Electric Ind Co Ltd | 出力回路 |
JP3425890B2 (ja) | 1999-04-08 | 2003-07-14 | Necエレクトロニクス株式会社 | バッファ回路 |
JP3551926B2 (ja) | 2000-02-22 | 2004-08-11 | ヤマハ株式会社 | バッファ回路 |
US6731134B1 (en) * | 2003-03-31 | 2004-05-04 | International Business Machines Corporation | Tri-state delay boost |
-
2003
- 2003-04-25 JP JP2003121480A patent/JP3759121B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-22 US US10/829,234 patent/US7049847B2/en not_active Expired - Lifetime
- 2004-04-23 EP EP20040090161 patent/EP1471642A1/en not_active Withdrawn
- 2004-04-23 CN CNB2004100369544A patent/CN1305218C/zh not_active Expired - Fee Related
- 2004-04-23 TW TW093111448A patent/TW200507454A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1111420A (zh) * | 1994-02-16 | 1995-11-08 | 株式会社东芝 | 输出电路 |
JPH09238065A (ja) * | 1996-03-01 | 1997-09-09 | Hitachi Ltd | 半導体集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2004328443A (ja) | 2004-11-18 |
EP1471642A1 (en) | 2004-10-27 |
CN1540864A (zh) | 2004-10-27 |
TW200507454A (en) | 2005-02-16 |
US7049847B2 (en) | 2006-05-23 |
JP3759121B2 (ja) | 2006-03-22 |
US20040212398A1 (en) | 2004-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ACER COMPUTER (CHINA) CO., LTD. Free format text: FORMER OWNER: BEIDA FANGZHENG SCIENCE + TECHNOLOGY COMPUTER SYSTEM CO., LTD., SHANGHAI Effective date: 20101029 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200120 36/F, SHANGHAI INTERNATIONAL BUILDING, NO.360, PUDONG SOUTH ROAD, PUDONG NEW DISTRICT, SHANGHAI TO: 200001 3/F, NO.168, XIZANG MIDDLE ROAD, HUANGPU DISTRICT, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20101103 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC ELECTRONICS Corp. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070314 Termination date: 20210423 |
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CF01 | Termination of patent right due to non-payment of annual fee |