CN1295731C - Method for implanting metal nano wire or nano tube into field emission source assembly - Google Patents
Method for implanting metal nano wire or nano tube into field emission source assembly Download PDFInfo
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- CN1295731C CN1295731C CNB02153327XA CN02153327A CN1295731C CN 1295731 C CN1295731 C CN 1295731C CN B02153327X A CNB02153327X A CN B02153327XA CN 02153327 A CN02153327 A CN 02153327A CN 1295731 C CN1295731 C CN 1295731C
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- nanotube
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Abstract
The present invention relates to a method for implanting a metal nanowire or a metal nanotube into a field emission source assembly. The present invention uses an added electrostatic field as driving force to enable the metal nanowire or the metal nanotube to be implanted into a coating layer on a basal plate in a flight mode and generate orientation, and the oriented structure of the metal nanowire or the metal nanotube can be used as the field emission source of a field emission display.
Description
Technical field
The present invention proposes a kind of implantation orientation technology that utilizes electrostatic field assistant metal nano wire or nanotube, can apply to the manufacturing of the field emission source assembly of Field Emission Display.
Background technology
In the field emission source processing procedure of Field Emission Display, it is generally acknowledged at present, can reduce the starting voltage and the critical voltage of field emission source, reach the requirement of power saving and satisfy the demand of modern flat-panel screens if increase the consistency of metallicity nano wire or nanotube orientation.
The applicant announces in No. 480537 patent case in Taiwan and has disclosed a kind of method that strengthens the nano carbon tube field emission, this method comprises wire mark CNT (carbon nano-tube) slurry on the cathode base with a plurality of negative electrode conduction regions, to form a plurality of CNT (carbon nano-tube) layer block of pixels; The target substrate imposes soft roasting processing; The target substrate imposes sintering processes; And attach a first surface and handle glued membrane on this cathode base and peel off it, in order to removing the not good entry material of tack, and strong but from the teeth outwards the CNT (carbon nano-tube) of lying low of pull-up caking property.This method is preferable, after this cathode base is subjected to soft roasting treatment step, further comprises and attaches a second surface and handle glued membrane on this cathode base and remove it, with further raising same electrical current density after the match.
Yet above-mentioned wire mark CNT (carbon nano-tube) slurry is behind soft roasting sintering, and its CNT (carbon nano-tube) material that is exposed to the surface only accounts for the quite little ratio of its total material materials, and in other words, its material availability (being used for emission current) is not high; And the orientation nano carbon Guan Jun that this method is implanted is positioned on the surface, and just the material availability is close to 100%, and this can significantly reduce material cost.
The at present known traditional pile carpet, push toy, fine hair ornament of applying to made used fine hair implanted prosthetics and roughly used electrostatic field method or two kinds of methods of mechanical vibration method to carry out, and its material is confined to diameter usually for time millimeter or micron-sized empire silk or dielectric silk or be mixed with empire silk wiry or the dielectric silk.The present invention sees through the improvement of existing known electrostatic spinning method, and the application of flying and implanting orientation and be used for field emission source at metallicity nano wire or nanotube is so invention is benefited with innovation to some extent to the improvement of field emission displays product processing procedure.
Summary of the invention
The present invention improves the restriction that electrostatic field flocking method now only allows empire silk or the flocking of dielectric silk, see through the present invention and be applicable to that the implantation of metallicity nano wire or nanotube is orientated, use this method to implant metallicity nano wire or nanotube field emission source negative electrode block that orientation forms, have splendid field emission characteristic, can apply to the field emission source assembly of Field Emission Display, and this electric field assistant metal nano wire or nanotube are implanted the advantage that orientation technology also has large tracts of landization and high process compatibility, have the potentiality of development large tracts of land field emission displays.
Electric field assistant metal nano wire of the present invention or nanotube orientation technology comprise utilizes following assembly: electrostatic field, isolation layer, coat, substrate, metallicity nano wire or nanotube.Metallicity nano wire or nanotube are the material that orientation is implanted in desire flight; Coat is the rete that metallicity nano wire or nanotube orientation are implanted; Substrate then provides coating layer intensity or has the function of conduction concurrently; Isolation layer can provide metallicity nano wire or nanotube and extraneous insulation condition implantation and the action that is orientated so that metallicity nano wire or nanotube fly; Added electrostatic field is ordered about the metallicity nano wire or nanotube flies in electric field, and assistant metal nano wire or nanotube are implanted in the coat and realized consistent orientation.
After the detailed description with reference to accompanying drawing and accompanying drawing, more can preferable understanding be arranged to purpose of the present invention and advantage thereof.
Description of drawings
Fig. 1 is the schematic diagram that electric field aided nano silk of the present invention or nanotube are implanted the structure of method for alignment.
The CNT (carbon nano-tube) that Fig. 2 is obtained for the embodiment 1 according to the inventive method is implanted cross section (FE-SEM) photo of the scanning type electron microscope observation of coat.
Fig. 3 is the I-V performance diagram of the field emission source that obtained according to the embodiment 1 of the inventive method.
The nickel nano wire that Fig. 4 is obtained for the embodiment 2 of the inventive method is implanted the cross section FE-SEM picture of coat.
Fig. 5 is the I-V performance diagram of the field emission source that obtained according to the embodiment 2 of the inventive method.
Reference numeral:
10: the metallicity nano wire or the nanotube that preset
20: substrate
30: coat
40: isolation layer
50: electrostatic field
Detailed description of the invention
The invention provides a kind of method to metallicity nano wire or nanotube implantation orientation, this implants the field emission source assembly that method for alignment can be used for making Field Emission Display.The inventive method comprises the following step:
A) metallicity nano wire or nanotube are tiled on the isolation layer of a level;
B) with a substrate with coat, with this coat in the face of the metallicity nano wire of this tiling or the mode of nanotube, parallel in fact every vacant on this isolation layer;
C) electrostatic field that applies a vertical direction makes the flight of this metallicity nano wire or nanotube implant this coat in a space that comprises this isolation layer and this substrate;
Wherein this isolation layer comprises the monolayer constructions will of semiconduction or insulating properties material or the multi-ply construction of their both combinations, so that this metallicity nano wire or nanotube and extraneous insulation to be provided; Reach this coat and constituted, implant this coat to allow this metallicity nano wire or nanotube under the effect of this electrostatic field, to fly by the macromolecular material littler, macromolecular material and metallic alloy composite material, metal material or semiconduction material or insulating properties material than the rigidity of this metallicity nano wire or nanotube.
Preferable, this nano wire or nanotube are metallicity, the nano wire or the nanotube of metallicity and semiconduction or metallicity and insulating properties material or metallicity and semiconduction and insulating properties material mixing.Better, this nano wire or nanotube are CNT (carbon nano-tube) or nickel nano wire.
Preferable, this substrate comprises metallicity, the monolayer constructions will of semiconduction or insulating properties material or the multi-ply construction of above-mentioned any two or three material.Better, this substrate can be Copper Foil or aluminium oxide or silicon substrate.
Preferable, this electrostatic field utilizes metallic plate or forms the metal tip of array or two electrodes or the multiple electrode structure of above-mentioned two kinds of forms combination, and applies direct voltage and produce.
Preferable, this coat can be conductive adhesive film or soft insulating cement.
As shown in Figure 1, the enforcement structure of the inventive method comprises added electrostatic field 50, isolation layer 40, coat 30, substrate 20 and the nano wire that presets or nanotube 10.Metallicity nano wire that presets or nanotube 10 are implanted the material of orientation for desire; Substrate 20 is for combining and provide structural strength with coat 30 or having the function of conduction concurrently; Coat 30 is the rete that metallicity nano wire or nanotube 10 flights are implanted; Isolation layer 40 provides completely cutting off between metallicity nano wire or nanotube 10 and the electrostatic field 50, provides metallic nano wire or nanotube 10 to produce flight because of electric field action; Added electrostatic field 50 makes that the metallicity nano wire or the nanotubes 10 that preset are flown, if the modulation of utilization electric field can be controlled the metallicity nano wire that presets or flight, orientation and the implantation mode of nanotube.
Below will characteristics of the present invention, effect of the present invention be described in detail in detail with embodiment.Embodiment enumerates, the special case of using as the present invention only, and unrestricted applicable scope of the present invention.
Embodiment 1:
Realize present embodiment with structure shown in Figure 1.The generation of added electrostatic field 50 utilizes two parallel electrode plates to realize, its electric field strength is 800V/cm.Isolation layer 40 is the acryl insulating material of the about 2mm of thickness.Coat 30 is the about 20 microns soft epoxy resin insulating cement of thickness.Substrate 20 is a copper-foil conducting electricity.The metallicity nano wire that presets or the material of nanotube 10 are the metallic multiple-wall carbon nanotube of tool.Distance between this coat 30 and the isolation layer 40 is 10cm.Fig. 2 is the FE-SEM picture of the soft coat of CNT (carbon nano-tube) flight implantation, and CNT (carbon nano-tube) has the effect of orientation implantation roughly as seen from the figure.Fig. 3 is as the measured I-V characteristic curve of field emission source with present embodiment 1 sample.By measurement as can be known: CNT (carbon nano-tube) is implanted and is penetrated soft coat adding under the electrostatic field flight, and contacts with electrically-conductive backing plate, and the I-V characteristic shows that its characteristic can apply to the application of flat-panel screens field emission source.
Embodiment 2:
Realize present embodiment with structure shown in Figure 1.The generation of added electrostatic field 50 utilizes two parallel electrode plates to realize, its electric field strength is about 1000V/cm.Isolation layer 40 is the acryl insulating material of the about 2mm of thickness.Coat 30 is thickness hundreds of microns conductive silver glue approximately.Substrate 20 is an aluminium oxide.The metallicity nano wire that presets or the material of nanotube 10 are the nickel nano wire.Distance between this coat 30 and the isolation layer 40 is 10cm.Fig. 4 is that the flight of nickel nano wire implants the FE-SEM picture of soft coat, by the difference of height among the figure as can be known the nickel nano wire be orientated the implantation coat.Fig. 5 is that the present embodiment sample is as the measured I-V characteristic curve of field emission source.
Claims (7)
1. the metallicity nano wire of the field emission source assembly of a Field Emission Display or the method for implantation of nanotube comprise the following step:
A) metallicity nano wire or nanotube are tiled on the isolation layer of a level;
B) with a substrate with coat, with this coat in the face of the metallicity nano wire of this tiling or the mode of nanotube, parallel every vacant on this isolation layer;
C) electrostatic field that applies a vertical direction makes the flight of this metallicity nano wire or nanotube implant this coat in a space that comprises this isolation layer and this substrate;
Wherein this isolation layer comprises the monolayer constructions will of semiconduction or insulating properties material or the multi-ply construction of their both combinations, so that this metallicity nano wire or nanotube and extraneous insulation to be provided; Reach this coat and constituted, implant this coat to allow this metallicity nano wire or nanotube under the effect of this electrostatic field, to fly by the macromolecular material littler, macromolecular material and metallic alloy composite material, metal material or semiconduction material or insulating properties material than the rigidity of this metallicity nano wire or nanotube.
2. the method for claim 1, wherein this nano wire or nanotube are metallicity, the nano wire or the nanotube of metallicity and semiconduction or metallicity and insulating properties material or metallicity and semiconduction and insulating properties material mixing.
3. the method for claim 1, wherein this substrate comprises metallicity, the monolayer constructions will of semiconduction or insulating properties material or the multi-ply construction of above-mentioned any two or three material.
4. the method for claim 1, wherein this electrostatic field utilizes metallic plate or forms the metal tip of array or two electrodes or the multiple electrode structure of above-mentioned two kinds of forms combination, and applies direct voltage and produce.
5. method as claimed in claim 2, wherein this nano wire or nanotube are CNT (carbon nano-tube) or nickel nano wire.
6. method as claimed in claim 3, wherein this substrate can be Copper Foil or aluminium oxide or silicon substrate.
7. the method for claim 1, wherein this coat can be conductive adhesive film or soft insulating cement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02153327XA CN1295731C (en) | 2002-11-25 | 2002-11-25 | Method for implanting metal nano wire or nano tube into field emission source assembly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02153327XA CN1295731C (en) | 2002-11-25 | 2002-11-25 | Method for implanting metal nano wire or nano tube into field emission source assembly |
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| Publication Number | Publication Date |
|---|---|
| CN1503298A CN1503298A (en) | 2004-06-09 |
| CN1295731C true CN1295731C (en) | 2007-01-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB02153327XA Expired - Fee Related CN1295731C (en) | 2002-11-25 | 2002-11-25 | Method for implanting metal nano wire or nano tube into field emission source assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104916812A (en) * | 2015-06-17 | 2015-09-16 | 东华大学 | Electrostatic flocking preparation method of graphene electrode plate for lithium ion battery |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1111170A (en) * | 1992-10-23 | 1995-11-08 | 阿基莱斯株式会社 | Short fibres for electrostatic flocking |
| CN1349241A (en) * | 2001-11-23 | 2002-05-15 | 中国科学院上海微***与信息技术研究所 | Method of raising the field electron emitting performance of carbon nanotube film |
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2002
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1111170A (en) * | 1992-10-23 | 1995-11-08 | 阿基莱斯株式会社 | Short fibres for electrostatic flocking |
| CN1349241A (en) * | 2001-11-23 | 2002-05-15 | 中国科学院上海微***与信息技术研究所 | Method of raising the field electron emitting performance of carbon nanotube film |
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| CN1503298A (en) | 2004-06-09 |
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