CN1267968C - 半导体元件微细图形的形成方法 - Google Patents

半导体元件微细图形的形成方法 Download PDF

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Publication number
CN1267968C
CN1267968C CNB021400164A CN02140016A CN1267968C CN 1267968 C CN1267968 C CN 1267968C CN B021400164 A CNB021400164 A CN B021400164A CN 02140016 A CN02140016 A CN 02140016A CN 1267968 C CN1267968 C CN 1267968C
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CN
China
Prior art keywords
dielectric film
film
semiconductor element
insulation film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021400164A
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English (en)
Chinese (zh)
Other versions
CN1438677A (zh
Inventor
朴哲秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DongbuAnam Semiconductor Inc
Original Assignee
DongbuAnam Semiconductor Inc
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Filing date
Publication date
Application filed by DongbuAnam Semiconductor Inc filed Critical DongbuAnam Semiconductor Inc
Publication of CN1438677A publication Critical patent/CN1438677A/zh
Application granted granted Critical
Publication of CN1267968C publication Critical patent/CN1267968C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Drying Of Semiconductors (AREA)
CNB021400164A 2001-12-20 2002-12-20 半导体元件微细图形的形成方法 Expired - Fee Related CN1267968C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR81791/2001 2001-12-20
KR10-2001-0081791A KR100449319B1 (ko) 2001-12-20 2001-12-20 반도체 소자의 미세 패턴 형성 방법
KR81791/01 2001-12-20

Publications (2)

Publication Number Publication Date
CN1438677A CN1438677A (zh) 2003-08-27
CN1267968C true CN1267968C (zh) 2006-08-02

Family

ID=27606983

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021400164A Expired - Fee Related CN1267968C (zh) 2001-12-20 2002-12-20 半导体元件微细图形的形成方法

Country Status (4)

Country Link
JP (1) JP3841345B2 (ja)
KR (1) KR100449319B1 (ja)
CN (1) CN1267968C (ja)
TW (1) TWI226655B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100781542B1 (ko) 2006-06-08 2007-12-03 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
KR100843241B1 (ko) * 2007-03-29 2008-07-02 삼성전자주식회사 반도체 소자의 제조방법
CN102446704B (zh) * 2010-10-14 2013-09-11 中芯国际集成电路制造(上海)有限公司 双重图形化方法
CN115241047A (zh) * 2021-04-23 2022-10-25 长鑫存储技术有限公司 半导体结构的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930001301A (ko) * 1991-06-10 1993-01-16 김광호 반도체 패턴 형성방법
KR970048979A (ko) * 1995-12-16 1997-07-29 김주용 미세 패턴을 갖는 마스크 형성 방법
KR0159012B1 (ko) * 1995-12-29 1998-12-15 김주용 2층 감광막 패턴 형성방법
KR100465743B1 (ko) * 1997-06-26 2005-04-19 주식회사 하이닉스반도체 반도체소자제조방법
KR20010011143A (ko) * 1999-07-26 2001-02-15 김영환 반도체소자의 미세패턴 형성방법

Also Published As

Publication number Publication date
CN1438677A (zh) 2003-08-27
TWI226655B (en) 2005-01-11
JP3841345B2 (ja) 2006-11-01
TW200411729A (en) 2004-07-01
KR20030051000A (ko) 2003-06-25
KR100449319B1 (ko) 2004-09-18
JP2003197622A (ja) 2003-07-11

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060802

Termination date: 20121220