CN1267769C - 等离子箱体 - Google Patents

等离子箱体 Download PDF

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Publication number
CN1267769C
CN1267769C CNB2004100372015A CN200410037201A CN1267769C CN 1267769 C CN1267769 C CN 1267769C CN B2004100372015 A CNB2004100372015 A CN B2004100372015A CN 200410037201 A CN200410037201 A CN 200410037201A CN 1267769 C CN1267769 C CN 1267769C
Authority
CN
China
Prior art keywords
voltage
impedance matching
frequency
power supply
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100372015A
Other languages
English (en)
Chinese (zh)
Other versions
CN1575089A (zh
Inventor
崔熙焕
金湘甲
姜聖哲
宋仁虎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1575089A publication Critical patent/CN1575089A/zh
Application granted granted Critical
Publication of CN1267769C publication Critical patent/CN1267769C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CNB2004100372015A 2003-06-12 2004-04-22 等离子箱体 Expired - Fee Related CN1267769C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2003-0038023 2003-06-12
KR1020030038023A KR100968571B1 (ko) 2003-06-12 2003-06-12 플라즈마 챔버
KR1020030038023 2003-06-12

Publications (2)

Publication Number Publication Date
CN1575089A CN1575089A (zh) 2005-02-02
CN1267769C true CN1267769C (zh) 2006-08-02

Family

ID=33509689

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100372015A Expired - Fee Related CN1267769C (zh) 2003-06-12 2004-04-22 等离子箱体

Country Status (4)

Country Link
US (1) US20040250954A1 (ko)
KR (1) KR100968571B1 (ko)
CN (1) CN1267769C (ko)
TW (1) TWI244672B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4134226B2 (ja) * 2004-03-10 2008-08-20 東京エレクトロン株式会社 分配器および方法、プラズマ処理装置および方法、並びに、ｌｃｄの製造方法
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
JP5514413B2 (ja) 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
CN101478857A (zh) * 2008-01-04 2009-07-08 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理装置
JP5390846B2 (ja) * 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
KR102475069B1 (ko) * 2017-06-30 2022-12-06 삼성전자주식회사 반도체 제조 장치, 이의 동작 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3220383B2 (ja) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US6043607A (en) * 1997-12-16 2000-03-28 Applied Materials, Inc. Apparatus for exciting a plasma in a semiconductor wafer processing system using a complex RF waveform
US6126778A (en) * 1998-07-22 2000-10-03 Micron Technology, Inc. Beat frequency modulation for plasma generation
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
US20030094239A1 (en) * 2000-06-02 2003-05-22 Quon Bill H. Apparatus and method for improving electron ecceleration
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor

Also Published As

Publication number Publication date
CN1575089A (zh) 2005-02-02
US20040250954A1 (en) 2004-12-16
KR20040107743A (ko) 2004-12-23
TW200428466A (en) 2004-12-16
KR100968571B1 (ko) 2010-07-08
TWI244672B (en) 2005-12-01

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060802

Termination date: 20100422